JP2000301372A - Laser processing method of transparent material - Google Patents
Laser processing method of transparent materialInfo
- Publication number
- JP2000301372A JP2000301372A JP11116767A JP11676799A JP2000301372A JP 2000301372 A JP2000301372 A JP 2000301372A JP 11116767 A JP11116767 A JP 11116767A JP 11676799 A JP11676799 A JP 11676799A JP 2000301372 A JP2000301372 A JP 2000301372A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- transparent material
- processing method
- glass
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012780 transparent material Substances 0.000 title claims abstract description 36
- 238000003672 processing method Methods 0.000 title claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 78
- 230000010355 oscillation Effects 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 25
- 239000010410 layer Substances 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 17
- 239000000049 pigment Substances 0.000 abstract description 17
- 239000002344 surface layer Substances 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000000155 melt Substances 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 description 56
- 238000005553 drilling Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 5
- 239000011358 absorbing material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 101100454361 Arabidopsis thaliana LCB1 gene Proteins 0.000 description 1
- 101100171146 Oryza sativa subsp. japonica DREB2C gene Proteins 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/08—Severing cooled glass by fusing, i.e. by melting through the glass
- C03B33/082—Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
- B23K2101/35—Surface treated articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Surface Treatment Of Glass (AREA)
- Lasers (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
(57)【要約】
【課題】 低出力のレーザ光を用いて様々なガラスなど
の透明材料に微細な深穴を高速かつ安価に、高品質・高
精度に形成し得る産業上実用的な透明材料のレーザ加工
方法を提供する。
【解決手段】 ガラス基板6表面に顔料8を均一な厚さ
に付着させ、該表面に向けて基本波、第2高調波、又は
第3高調波でシングルモードビームのQスイッチパルス
発振YAGレーザBを照射する。顔料が最初の1つ又は
いくつかのパルスのレーザエネルギを吸収して、ガラス
基板表面に高温・高圧のプラズマ状態が発生し、表面層
のガラスを溶融・除去して凹所9を形成し、かつその周
辺部をレーザ光を吸収し易い組成に変質させる。この変
質層10が、その後に連続して照射されるレーザ光を吸
収して溶融・除去されることにより、ガラス基板を貫通
する微細穴11が形成される。
PROBLEM TO BE SOLVED: To provide an industrially practical transparent material capable of forming fine deep holes at high speed and at low cost with high quality and high precision in various transparent materials such as glass using a low output laser beam. Provided is a laser processing method for a material. SOLUTION: A pigment 8 is adhered to a surface of a glass substrate 6 to a uniform thickness, and a Q-switched pulse oscillation YAG laser B of a single mode beam with a fundamental wave, a second harmonic or a third harmonic is directed toward the surface. Is irradiated. The pigment absorbs the laser energy of the first one or several pulses, generates a high-temperature, high-pressure plasma state on the surface of the glass substrate, and melts and removes the glass of the surface layer to form a recess 9, At the same time, its peripheral portion is transformed into a composition that easily absorbs laser light. The altered layer 10 absorbs the laser light continuously irradiated thereafter and is melted and removed, thereby forming the fine holes 11 penetrating the glass substrate.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、レーザ光を用いて
ガラス、結晶などの透明材料に微細な穴、特に貫通穴を
形成することができるレーザ加工方法に関する。特に本
発明は、例えばガラス板に多数の整列した微細穴を開設
してインクジェットプリンタ用の噴射孔を形成したり、
液晶パネルのガラス板に、電子部品と電極などを接続す
るためのスルーホールを形成するために使用される産業
上実用的な透明材料のレーザ加工方法に関する。The present invention relates to a laser processing method capable of forming fine holes, particularly through holes, in a transparent material such as glass or crystal using a laser beam. In particular, the present invention, for example, to form a number of aligned micro holes in a glass plate to form an injection hole for an inkjet printer,
The present invention relates to a laser processing method of an industrially practical transparent material used for forming a through hole for connecting an electronic component and an electrode to a glass plate of a liquid crystal panel.
【0002】[0002]
【従来の技術】従来より、ガラスなどの透明材料に微細
な穴あけ加工を行うために、回転砥石、ドリル、超音波
などを用いた加工方法又は砥粒を噴射するマイクロブラ
スト法などの機械的加工方法や、溶液を用いるウェット
エッチングなどの化学的方法が一般に採用されている。
また最近は、電子ビームやイオンビーム、レーザ光を照
射するエネルギビーム加工が行われている。2. Description of the Related Art Conventionally, in order to perform fine drilling on a transparent material such as glass, a mechanical processing such as a processing method using a rotary grindstone, a drill, an ultrasonic wave, or a micro blast method for spraying abrasive grains. Methods and chemical methods such as wet etching using a solution are generally employed.
Recently, energy beam processing for irradiating an electron beam, an ion beam, or a laser beam has been performed.
【0003】レーザ加工では、一般に紫外光であるエキ
シマレーザやCO2 レーザなどの遠赤外線レーザが使用
されている。更に、ジャイアントパルスと呼ばれる高ピ
ーク出力のレーザを用いると、可視光や近赤外光による
加工が可能であるとの研究報告がある。他方、比較的安
価で操作性が良く、取扱いも簡単なために幅広い用途に
利用されているYAGレーザは、一般にガラス材料に対
する吸収率が低いので加工できないとされている。In laser processing, a far-infrared laser such as an excimer laser or a CO 2 laser, which is generally ultraviolet light, is used. Furthermore, there is a research report that processing with visible light or near-infrared light is possible by using a laser having a high peak output called a giant pulse. On the other hand, it is said that YAG lasers, which are relatively inexpensive, have good operability, and are easy to handle, cannot be processed because of their low absorptivity to glass materials in general.
【0004】YAGレーザに関する池野順一らの論文
「溶液を用いた石英ガラスのYAGレーザ加工」(精密
工学会誌 55/2/1989、第93〜98頁)によれば、金属イオ
ン含有溶液を厚さ1.5mmの透明石英ガラス板の表面に
滴下し、又はその裏面に接触させてパルス発振YAGレ
ーザを照射すると、該溶液がレーザ光を吸収して高熱を
発生し、石英ガラスを溶融させて貫通穴を形成できるこ
とが報告されている。また同論文には、不純物を含む一
般ガラスの場合、その表面にマジックインキを塗布する
だけで、上述した溶液なしで同様に貫通穴をレーザ加工
可能なことが記載されている。According to a paper by Junichi Ikeno et al. On YAG laser, "YAG laser processing of quartz glass using solution" (Journal of the Japan Society of Precision Engineering, 55/2/1989, pp. 93-98), the thickness of a solution containing metal ions is reduced. When a pulsed YAG laser is irradiated onto the surface of a 1.5 mm transparent quartz glass plate by dropping or in contact with the back surface, the solution absorbs laser light and generates high heat, melting the quartz glass and penetrating it. It has been reported that holes can be formed. The same article also describes that in the case of general glass containing impurities, the through-hole can be similarly laser-processed without the above-mentioned solution simply by applying magic ink to the surface.
【0005】また、池野らの別の報告(「結晶化ガラス
のYAGレーザ加工」、1997年度精密工学会秋季大会学
術講演会論文集、第232頁)によれば、結晶化ガラスの
表面に焦点を合わせてレーザ光を照射した場合、ガラス
内部に溶融部が形成されるため、その出力が閾値を超え
た途端にクラックが発生してガラスが破壊される。そこ
で、ガラス表面に顔料を塗布し、これにパルス発振YA
Gレーザ光を照射して該表面に溶融部を形成し、外部に
飛散除去することにより、このクラック発生の問題を解
消して、厚さ4mmの結晶化ガラス板に貫通穴を形成して
いる。According to another report by Ikeno et al. (“YAG laser processing of crystallized glass”, Proceedings of the 1997 Autumn Meeting of the Japan Society for Precision Engineering, page 232), the focus was on the surface of crystallized glass. When a laser beam is irradiated together with the laser beam, a molten portion is formed inside the glass, and as soon as the output exceeds a threshold, a crack is generated and the glass is broken. Therefore, a pigment is applied to the glass surface, and a pulse oscillation YA
By irradiating a G laser beam to form a melted part on the surface and scattering it to the outside, this problem of crack generation is solved, and a through-hole is formed in a crystallized glass plate having a thickness of 4 mm. .
【0006】この加工メカニズムについて、同じく池野
順一の論文「YAGレーザを用いたガラスの3次元穴あ
け加工」(レーザ学会研究会報告、No.RTM-98-4、社
団法人レーザ学会、1998年1月30日発行、第23〜27頁)
によれば、加工穴に加工変質層が観察されることから、
顔料がYAGレーザを吸収してガラスが溶融することに
より加工変質層が形成され、この加工変質層が次のレー
ザ光を吸収して加工が進行すると分析している。[0006] This processing mechanism is also described in a paper by Junichi Ikeno, "Three-dimensional drilling of glass using YAG laser" (Report of the Laser Society of Japan, No. RTM-98-4, Laser Society of Japan, January 1998) Published on the 30th, pages 23-27)
According to the fact that a damaged layer is observed in the drilled hole,
It is analyzed that the pigment absorbs the YAG laser and the glass is melted to form a deteriorated layer, and the deteriorated layer absorbs the next laser beam and proceeds.
【0007】また、高木茂行らの論文「FHG−YAG
レーザによるアブレーション加工」(社団法人電気学
会、光・量子デバイス研究会資料、資料番号OQD-95-
5、第37〜46頁、1995年3月10日発行)には、CW励起
Acoustic Qスイッチ動作のYAGレーザをベースとし
たパルス励起第4高調波(FHG)のYAGレーザは、
ピークパワーは低いが、kHzオーダーの高繰り返し励
振が可能で、制御性が良く、装置の信頼性・使い易さ・
メンテナンス性が高いなどの利点があり、高分子材料の
ポリイミドやソーダガラスに対して高精度な微細加工が
可能なことが報告されている。高木らによれば、エキシ
マレーザでソーダガラスを加工するとマイクロクラック
が発生するのに対し、FHG−YAGレーザは、入射径
30μmでソーダガラスに深さ40mmの穴を加工するこ
とができた。A paper by Shigeyuki Takagi et al., "FHG-YAG
Laser Ablation ”(The Institute of Electrical Engineers of Japan, Materials for Optical and Quantum Devices Research, Material No. OQD-95-
5, pages 37-46, published March 10, 1995)
A pulsed fourth harmonic (FHG) YAG laser based on an Acoustic Q-switched YAG laser is:
Although the peak power is low, high repetition excitation on the order of kHz is possible, the controllability is good, and the reliability, ease of use,
It is reported that it has advantages such as high maintainability and that high-precision fine processing can be performed on polyimide or soda glass of a polymer material. According to Takagi et al., When processing soda glass with an excimer laser, microcracks are generated, whereas with the FHG-YAG laser, a hole having a diameter of incidence of 30 μm and a depth of 40 mm can be formed in soda glass.
【0008】更に、林健一の論文「Nd:YLFレーザー
第5高調波によるガラスの高アスペクト比加工」(レー
ザー研究、1997年11月)には、ソーダ石灰ガラスや液晶
ディスプレイ(LCD)に用いられる無アルカリガラス
などのガラス基板に対し、Nd:YLFレーザー第5高調
波を用いてアブレーション加工を行ったところ、入射側
穴径10μm、出射側穴径4μmでアスペクト比100
を超える深穴加工を実現できたこと、及び入射側・出射
側とも加工表面にクラックの発生は認められなかったこ
とが記載されている。また、林によれば、菊地薫によっ
てNd:YAGレーザの基本波を用いたガラスの穴あけ加
工が報告されている(機械研ニュース10(1995)
6)。Further, Kenichi Hayashi's paper "High Aspect Ratio Processing of Glass by Nd: YLF Laser Fifth Harmonic" (Laser Research, November 1997) is used for soda-lime glass and liquid crystal displays (LCD). When an ablation process was performed on a glass substrate such as an alkali-free glass using the fifth harmonic of a Nd: YLF laser, an entrance side hole diameter was 10 μm, an exit side hole diameter was 4 μm, and an aspect ratio was 100 μm.
It has been described that deep hole processing exceeding the maximum diameter was achieved, and that no crack was observed on the processed surface on both the incident side and the outgoing side. According to Hayashi, Kaoru Kikuchi reported drilling of glass using the fundamental wave of a Nd: YAG laser (Mechanical Research News 10 (1995)).
6).
【0009】[0009]
【発明が解決しようとする課題】しかしながら、上述し
た従来の加工方法には次のような問題がある。先ず、マ
イクロブラスト法などの機械的加工方法では、加工穴の
微細化に限度があり、かつ加工穴の開口周辺にチッピン
グ即ち微小な欠けが生じ易いなど、品質上の問題を生じ
る虞がある。また、ウェットエッチングは、被加工物の
材質により使用可能なエッチング液が制限される場合が
あり、また微細な深穴を加工することが困難で、加工速
度が遅いなどの不都合がある。同様に、電子ビームやイ
オンビームなどの加工装置は一般に高額であり、かつ加
工速度が非常に遅い。However, the above-mentioned conventional processing method has the following problems. First, in a mechanical processing method such as a micro blast method, there is a limit to miniaturization of a processing hole, and there is a possibility of causing a quality problem such as chipping, that is, a minute chipping easily occurs around an opening of the processing hole. Further, in wet etching, usable etchants may be limited depending on the material of a workpiece, and it is difficult to process a fine deep hole, and the processing speed is slow. Similarly, processing devices such as electron beams and ion beams are generally expensive and have very low processing speeds.
【0010】レーザ加工の場合、エキシマレーザは装置
が高額でランニングコストが高く、かつ装置のメンテナ
ンス性が悪いなどの問題がある。CO2 レーザは、熱的
加工を行ないかつ出力が大きいために、加工部周辺の広
範囲に亘って熱歪みによるクラックを発生させ易く品質
を損なう虞があり、また波長が長いために集光性が低
く、微細加工には不向きである。ジャイアントパルスレ
ーザも同様に装置が高額で、しかもピーク出力が高過ぎ
るために光学系にダメージを与える虞がある。In the case of laser processing, an excimer laser has problems such as an expensive apparatus, high running cost, and poor maintenance of the apparatus. The CO 2 laser performs thermal processing and has a large output.Therefore, cracks due to thermal distortion are likely to occur over a wide area around the processed part, and the quality may be impaired. Low and not suitable for microfabrication. Similarly, the giant pulse laser is expensive, and the peak output is too high, which may damage the optical system.
【0011】上述した池野らによるパルス発振型YAG
レーザの穴あけ加工は、或る程度高いレーザ出力を必要
とするために、加工対象のガラス材料や加工条件によっ
てはクラックが発生し易く、加工安定性を欠く虞が生じ
る。また、ビームの品質が低く、集光特性がよくないた
め、直径100μm以下の穴あけ加工は困難である。一
方、高木らのFHG−YAGレーザは、第4高調波を得
るために、2個の非線形結晶をレーザ共振器の内部と外
側とに配置し、かつそれらを狭い温度整合許容幅に制御
する必要があるので、装置自体が複雑かつ高価になり、
加工安定性を損なう虞がある。また、紫外光を使用する
ため、非線形結晶やミラー、レンズ等の劣化を招く虞が
ある。The pulse oscillation type YAG by Ikeno et al.
Since laser drilling requires a certain high laser output, cracks are likely to occur depending on the glass material to be processed and processing conditions, and there is a possibility that processing stability is lacking. Further, since the beam quality is low and the light-collecting characteristics are not good, it is difficult to form a hole having a diameter of 100 μm or less. On the other hand, the Takagi et al. FHG-YAG laser requires two nonlinear crystals to be placed inside and outside the laser resonator and to control them to a narrow temperature matching tolerance in order to obtain the fourth harmonic. The device itself becomes complicated and expensive,
There is a possibility that processing stability is impaired. Further, since ultraviolet light is used, there is a possibility that the nonlinear crystal, the mirror, the lens, and the like may be deteriorated.
【0012】また、上述した林の論文によれば、菊地薫
のNd:YAGレーザの基本波によるガラスの穴あけ加工
は、ガラス内部にレーザビームを集光して多光子吸収に
よりガラスの裏面から表面に向かって穴を開けるもの
で、加工歪みが残るために、機械研磨や熱処理などの後
処理が必要である。更に、Nd:YLFレーザーの第5高
調波を採用した理由として、第4高調波では数回の照射
でガラス表面にクラックが生じるので、産業応用上、加
工表面にクラックのない良好な加工を実現するために
は、更に短波長の光源が必要と考えられるからであると
している。しかしながら、このような短波長の光源を用
いたレーザ加工は、同様に装置及び加工のコストが高く
なるという問題がある。According to Hayashi's paper mentioned above, Kaoru Kikuchi's drilling of glass with the fundamental wave of an Nd: YAG laser focuses a laser beam inside the glass and absorbs multiphotons from the back to front of the glass. Since holes are formed toward the surface, post-processing such as mechanical polishing and heat treatment is required because processing distortion remains. Furthermore, the reason why the fifth harmonic of the Nd: YLF laser is adopted is that, with the fourth harmonic, cracks are generated on the glass surface by several times of irradiation, so that good processing without cracks on the processing surface is realized for industrial applications. In order to do so, a light source with a shorter wavelength is considered necessary. However, laser processing using such a short-wavelength light source also has a problem that equipment and processing costs are similarly increased.
【0013】そこで、本発明は、上述した従来の問題点
に鑑みてなされたものであり、その目的は、例えばせい
ぜい数ワット程度の低出力のレーザ光を用いて、従来レ
ーザ加工が困難であるとされてきたガラスを含む様々な
ガラスや結晶などの透明材料に、微細な深穴を高速かつ
安価に、高品質・高精度に形成できる産業上実用的な透
明材料のレーザ加工方法を提供することにある。Accordingly, the present invention has been made in view of the above-mentioned conventional problems, and has as its object to use conventional low-power laser light of, for example, several watts at most, and to perform conventional laser processing. Provide a laser processing method for industrially practical transparent materials that can form fine deep holes at high speed, at low cost, and with high quality and high precision in various transparent materials such as glass and crystals including glass It is in.
【0014】[0014]
【課題を解決するための手段】本発明の透明材料のレー
ザ加工方法は、上述した目的を達成するために、透明材
料からなる被加工物の表面に吸光物質を付着させ、該吸
光物質を付着させた被加工物表面に向けてQスイッチパ
ルス発振レーザを照射して、該表面に穴を形成すること
を特徴とする。According to the laser processing method for a transparent material of the present invention, in order to achieve the above-mentioned object, a light absorbing substance is adhered to a surface of a workpiece made of a transparent material, and the light absorbing substance is deposited. The method is characterized in that a Q-switched pulse oscillation laser is irradiated toward the surface of the processed workpiece to form a hole in the surface.
【0015】Qスイッチパルス発振レーザは、レーザの
蓄積エネルギを一旦ためて一気に出力させ、数W程度の
低い出力でも数百kW程度の高いパルスエネルギを得る
ことができる。最初の1つ又はいくつかのパルスが照射
されると、そのレーザエネルギを吸光物質が吸収して、
従来はレーザ加工が困難であったガラス材料であって
も、被加工物表面に高温・高圧のプラズマ状態が発生す
ることにより、該表面のガラスを溶融・除去して凹所を
形成しかつその周辺部をレーザ光を吸収し易い組成に変
質させ、又は、被加工物表面に凹所を形成することなく
変質層のみが形成される。この変質層が、その後に続け
て照射されるレーザ光を吸収して溶融・除去されること
により、微細な穴を加工することができる。The Q-switched pulse oscillation laser temporarily stores the stored energy of the laser and outputs it at once, and can obtain a high pulse energy of several hundred kW even with a low output of several W. When the first one or several pulses are emitted, the laser energy is absorbed by the light absorbing material,
Even in the case of glass materials that were conventionally difficult to laser-process, the high-temperature, high-pressure plasma state is generated on the surface of the workpiece, so that the glass on the surface is melted and removed to form a recess and Only the altered layer is formed without altering the peripheral portion to a composition that easily absorbs laser light, or without forming a recess on the surface of the workpiece. This altered layer absorbs laser light that is subsequently irradiated subsequently and is melted and removed, whereby a fine hole can be processed.
【0016】使用する前記レーザのビームがシングルモ
ードであると、光の回折限度までレーザ光を絞ることが
できることから、低出力でもレーザビームの集光径を1
0μm以下にしてパワー密度を大きくすることができ、
微細穴をより容易にかつ高精度に加工できるので好都合
である。If the laser beam used is in a single mode, the laser beam can be narrowed down to the diffraction limit of the light.
The power density can be increased to 0 μm or less,
This is advantageous because the fine holes can be processed more easily and with high precision.
【0017】本発明によれば、このように低出力で高パ
ワー密度が得られるので、使用するレーザは、従来のよ
うな第4高調波以上の短波長でなくても、基本波、第2
高調波、又は第3高調波を用いて、クラックの無い又は
少ない高品質の深穴を形成することができる。According to the present invention, since a high power density can be obtained at such a low output, the fundamental wave and the second wave can be used even if the laser to be used is not a short wavelength equal to or more than the fourth harmonic as in the prior art.
Using the harmonics or the third harmonic, high quality deep holes without or with few cracks can be formed.
【0018】Qスイッチパルス発振レーザであっても、
パルスエネルギが過大であれば、被加工物にクラックが
生じ易いので、或る実施例では、レーザの最初に照射す
る1つ又は複数のパルスのエネルギ又はピークパワー
を、それより後のパルスのエネルギ又はピークパワーよ
り小さくする。これにより、最初の1つ又は一連のパル
スでは、透明材料を溶融・除去できなくても、前記変質
層が形成され、これを後のレーザパルスで溶融・除去す
ることにより穴あけ加工を進めることができ、かつ加工
開始時に被加工物表面に作用する熱応力を軽減できるの
で、クラックの発生が抑制される。Even in the case of a Q-switched pulsed laser,
In one embodiment, the energy or peak power of one or more pulses initially illuminated by the laser is replaced by the energy of the subsequent pulses, since excessive pulse energy may cause cracks in the workpiece. Alternatively, the power is made smaller than the peak power. Thereby, even if the transparent material cannot be melted / removed by the first one or a series of pulses, the altered layer is formed, and the drilling process can be advanced by fusing / removing this with a later laser pulse. Since it is possible to reduce the thermal stress acting on the surface of the workpiece at the start of processing, the occurrence of cracks is suppressed.
【0019】また、レーザ光が直線偏光の場合、特に入
射部付近にクラックが発生し易く、加工穴は磁場の振動
面方向に曲がり易い性質があるため、いずれかの方向に
偏って加工が促進されて穴が曲がったり、穴径が拡大す
る虞がある。そこで、別の実施例では、前記レーザを円
偏光又はランダム偏光にして被加工物表面に照射するこ
とにより、加工穴の曲がりや穴径の拡大、及び特に入射
部周辺でのクラックの発生が抑制され、加工精度及び品
質が向上する。Further, when the laser beam is linearly polarized, cracks tend to occur particularly near the incident portion, and the machining hole tends to bend in the direction of the vibration plane of the magnetic field, so that machining is accelerated in any direction. The hole may be bent and the hole diameter may be enlarged. Therefore, in another embodiment, the laser is irradiated to the surface of the workpiece with circularly polarized light or random polarized light, thereby suppressing bending of a processing hole and enlargement of a hole diameter, and generation of cracks particularly around an incident portion. The processing accuracy and quality are improved.
【0020】或る実施例では、前記レーザを位相格子に
より分岐させて被加工物表面に照射することにより、該
表面に複数の穴を同時に加工することができ、加工時間
の大幅な短縮を図ることができる。In one embodiment, a plurality of holes can be simultaneously formed in the surface of the workpiece by irradiating the laser with a phase grating and irradiating the surface of the workpiece, thereby greatly reducing the processing time. be able to.
【0021】更に別の実施例では、適当な手段を用いて
前記被加工物を予め加熱する過程を更に含むことによ
り、被加工物内部においてレーザ光の照射による急激な
温度上昇を回避し、その熱応力の影響を少なくして、ク
ラックの発生を有効に抑制することができる。In still another embodiment, the method further includes a step of pre-heating the workpiece by using an appropriate means, thereby avoiding a rapid rise in temperature inside the workpiece due to laser light irradiation. Cracks can be effectively suppressed by reducing the influence of thermal stress.
【0022】また、前記吸光物質は、被加工物表面に均
質にかつ均一な厚さに付着させることにより、多数の穴
を加工する場合に、同じレーザ条件で均一な穴を形成で
き、加工のばらつきを防止することができる。In addition, when the light-absorbing substance is uniformly and uniformly deposited on the surface of the workpiece, when processing a large number of holes, a uniform hole can be formed under the same laser conditions. Variation can be prevented.
【0023】本発明の別の側面によれば、吸光物質を含
む透明材料からなる被加工物の表面に向けてQスイッチ
パルス発振レーザを照射し、該表面に穴を形成すること
を特徴とする透明材料のレーザ加工方法が提供される。According to another aspect of the present invention, a Q-switched pulse oscillation laser is irradiated toward a surface of a workpiece made of a transparent material containing a light absorbing substance, and a hole is formed in the surface. A laser processing method for a transparent material is provided.
【0024】この場合、被加工物の表面層に含まれる吸
光物質がレーザ光を吸収するので、従来より低出力のレ
ーザであっても、被加工物表面に吸光物質を付着させる
ことなく、表面層の透明材料を溶融・除去して凹所を形
成しかつその周辺部をレーザ光をより吸収し易い組成に
変質させることができる。更に、形成された凹所の内壁
付近に含まれる吸光物質及び前記変質層が、その後に続
けて照射されるレーザ光を吸収して溶融・除去されるこ
とにより、よりスムーズに微細な穴あけ加工を行うこと
ができる。In this case, since the light absorbing material contained in the surface layer of the workpiece absorbs the laser light, even if the laser has a lower output power than before, the light absorbing substance does not adhere to the surface of the workpiece without causing the light absorbing substance to adhere to the surface of the workpiece. The transparent material of the layer can be melted and removed to form a recess, and the periphery thereof can be transformed into a composition that can more easily absorb laser light. Further, the light absorbing substance and the altered layer contained in the vicinity of the inner wall of the formed recess absorb the laser beam subsequently irradiated and are melted and removed, so that fine drilling can be performed more smoothly. It can be carried out.
【0025】本発明を適用する透明材料には、ガラス又
は結晶材料が好ましい。特に、Al 2O3(アルミナ)を
20重量%以上含むガラスやソーダガラスなどが好都合
である。また、結晶材料としては、ニオブ酸リチウム、
タンタル酸リチウムなどが好適に用いられる。The transparent material to which the present invention is applied includes glass or
Is preferably a crystalline material. In particular, Al TwoOThree(Alumina)
Glass or soda glass containing more than 20% by weight is convenient
It is. In addition, as the crystal material, lithium niobate,
Lithium tantalate or the like is preferably used.
【0026】また、本発明に使用するレーザは、Qスイ
ッチパルス発振のYAGレーザ、YLFレーザ又はYV
Oレーザが好ましい。The laser used in the present invention may be a Q-switch pulse oscillation YAG laser, YLF laser or YV laser.
O lasers are preferred.
【0027】[0027]
【発明の実施の形態】以下に、添付図面を参照しつつ本
発明をその好適な実施例を用いて詳細に説明する。図1
は、本発明のレーザ加工方法を用いてガラスに微細穴を
形成するのに適したレーザ加工装置の実施例を概略的に
示している。このレーザ加工装置は、Qスイッチパルス
発振のYAGレーザを発生させるためのQスイッチユニ
ットを内蔵したレーザ発振器1と、ミラー2と、集光レ
ンズ3と、前記レーザ発振器とミラー間のレーザ光の光
路内に配置された機械的シャッタ手段4とを備える。レ
ーザ発振器1とシャッタ手段4とは、これらの動作を制
御するコンピュータ5に電気的に接続されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings using preferred embodiments. FIG.
1 schematically shows an embodiment of a laser processing apparatus suitable for forming micro holes in glass using the laser processing method of the present invention. This laser processing apparatus includes a laser oscillator 1 having a built-in Q-switch unit for generating a Q-switch pulse oscillation YAG laser, a mirror 2, a condenser lens 3, and an optical path of laser light between the laser oscillator and the mirror. And mechanical shutter means 4 disposed therein. The laser oscillator 1 and the shutter means 4 are electrically connected to a computer 5 for controlling these operations.
【0028】レーザ発振器1から発振されたレーザ光B
は、シャッタ手段4を通過してミラー2で反射され、集
光レンズ3で集光して被加工物6に照射される。本発明
によれば、レーザ発振器1はシングルモードのビームを
出力する。シングルモードビームは集光性に優れ、その
ビームスポット径を10μm以下に絞ることができ、ビ
ーム形状が円形でその中心にパワー密度が集中するの
で、低出力で大きいパワー密度が得られ、微細加工に適
している。また、レーザ光Bの波長は基本波(1064
μm)であるが、非線形結晶7(例えば、LBO)をレ
ーザ発振器1とシャッタ手段4間の光路内に又はレーザ
発振器内部に配置することにより、第2高調波(532
μm)又は第三高調波(355μm)を得ることができ
る。Laser light B oscillated from laser oscillator 1
Is reflected by the mirror 2 after passing through the shutter means 4, is condensed by the condenser lens 3, and is irradiated on the workpiece 6. According to the present invention, the laser oscillator 1 outputs a single-mode beam. The single mode beam is excellent in condensing property, the beam spot diameter can be narrowed to 10μm or less, the beam shape is circular, and the power density is concentrated at the center, so a large power density can be obtained with low output, and fine processing Suitable for. The wavelength of the laser beam B is the fundamental wave (1064
μm), but by disposing the nonlinear crystal 7 (for example, LBO) in the optical path between the laser oscillator 1 and the shutter means 4 or inside the laser oscillator, the second harmonic (532
μm) or the third harmonic (355 μm).
【0029】コンピュータ5は、所定のパルス幅のレー
ザ発振信号をレーザ発振器1に出力し、レーザ発振器1
は、前記レーザ発振信号に対応した大きさのピーク出力
のレーザ光を連続してパルス発振する。ピーク出力の大
小は、その待機時間の長短に依存し、従ってコンピュー
タ5が出力する前記レーザ発振信号のパルス幅は、形成
しようとする加工穴の深さ等の加工条件によって決定さ
れる。このようにQスイッチパルス発振のYAGレーザ
は、ランプ出力が数ワット程度の低い出力で、数kW程
度の大きなピーク出力又は照射エネルギが得られ、しか
も被加工物6への熱影響が少ない。また、Qスイッチパ
ルス発振のYLFレーザ及びYVOレーザを同様に用い
ることができる。The computer 5 outputs a laser oscillation signal having a predetermined pulse width to the laser oscillator 1,
Continuously oscillates a laser beam having a peak output having a magnitude corresponding to the laser oscillation signal. The magnitude of the peak output depends on the length of the standby time. Therefore, the pulse width of the laser oscillation signal output from the computer 5 is determined by the processing conditions such as the depth of a processing hole to be formed. As described above, the Q switch pulse oscillation YAG laser has a low lamp output of about several watts, a large peak output of about several kW or irradiation energy, and has little thermal influence on the workpiece 6. Further, a Q-switch pulse oscillation YLF laser and a YVO laser can be used in the same manner.
【0030】上述したようにピーク出力の大小はその待
機時間の長短に依存するから、各パルス列の最初のパル
スはピーク出力が過大になる。そこで、コンピュータ5
は、前記レーザ発振信号に同期させてそのパルス列の最
初のパルスにタイミングを合わせて、シャッタ信号をシ
ャッタ手段4に出力し、そのオンオフ動作によりレーザ
光Bを選択的に遮断又は通過させて、各パルス列の最初
のパルスのみをカットし、一定のピーク出力に制御され
たレーザ光を連続的にパルス発振させる。As described above, since the magnitude of the peak output depends on the length of the standby time, the peak output of the first pulse of each pulse train becomes excessive. So, computer 5
Outputs a shutter signal to the shutter means 4 in synchronization with the laser oscillation signal and in synchronization with the first pulse of the pulse train, and selectively turns off or passes the laser beam B by the on / off operation. Only the first pulse of the pulse train is cut, and the laser beam controlled to have a constant peak output is continuously pulsed.
【0031】図2(a)〜(d)は、図1のレーザ加工
装置を用いて本発明のレーザ加工方法により被加工物6
に微細穴を形成する過程を示している。本実施例におい
て、被加工物6はガラス基板である。このガラス基板
は、一般に利用されているソーダ石灰ガラス、パイレッ
クス(商標)などの硬質ガラス、鉛又はクリスタルガラ
ス、結晶化ガラス、無アルカリガラスなど、従来はレー
ザ加工が困難であったものを含む様々なガラス材料であ
って良い。FIGS. 2 (a) to 2 (d) show a workpiece 6 by the laser processing method of the present invention using the laser processing apparatus of FIG.
3 shows a process of forming micro holes. In this embodiment, the workpiece 6 is a glass substrate. This glass substrate can be made of various materials including conventionally used hard glass such as soda-lime glass, Pyrex (trademark), lead or crystal glass, crystallized glass, and alkali-free glass, which have been conventionally difficult to laser process. Any suitable glass material may be used.
【0032】先ず、図2(a)に示すように、ガラス基
板6の表面に吸光物質として、マジックインキ等に使用
される合成樹脂インク等の顔料8を、例えばスピンコー
トにより或る均一な厚さに塗布する。顔料以外の吸光物
質として、照射するレーザ光(本実施例では、波長10
64μm)を吸収し易い塗料等公知の様々な材料を用い
ることができる。顔料8の厚さを均一にすることによ
り、ガラス基板6に複数の穴を加工する場合に加工のば
らつきを抑制することができ、またそのために、顔料は
より均質で高純度な材料であることが好ましい。First, as shown in FIG. 2A, a pigment 8 such as a synthetic resin ink used for a magic ink or the like is coated on the surface of a glass substrate 6 as a light absorbing material by, for example, spin coating to a certain uniform thickness. And apply it. As a light-absorbing substance other than the pigment, a laser beam to be irradiated (wavelength 10
Various known materials such as a coating material that easily absorbs (64 μm) can be used. By making the thickness of the pigment 8 uniform, it is possible to suppress processing variations when processing a plurality of holes in the glass substrate 6, and therefore, the pigment must be a more uniform and high-purity material. Is preferred.
【0033】次に、ガラス基板6表面に焦点を合わせて
レーザ光Bを照射する。レーザ発振器1から発振される
パルス列の最初のパルスはピークが過大になるので、上
述したようにコンピュータ5からのシャッタ信号により
シャッタ手段13をオンオフ動作させてカットし、照射
される各パルスのピーク出力を一定にする。最初のパル
スが照射されると、その部分の顔料8がレーザエネルギ
を吸収して、高温・高圧のプラズマ状態をガラス基板表
面に生成する。このプラズマによりガラス基板6は、図
2(b)に示すように、その表面層が部分的に溶融し、
蒸発又は飛散して凹所9が形成される。Next, the surface of the glass substrate 6 is focused and irradiated with laser light B. Since the first pulse of the pulse train oscillated from the laser oscillator 1 has an excessive peak, the shutter means 13 is turned on and off by the shutter signal from the computer 5 as described above, and cut, and the peak output of each irradiated pulse is output. Constant. When the first pulse is applied, the pigment 8 in that portion absorbs the laser energy and generates a high-temperature, high-pressure plasma state on the glass substrate surface. Due to this plasma, the surface layer of the glass substrate 6 is partially melted as shown in FIG.
The recess 9 is formed by evaporation or scattering.
【0034】凹所9の開口部、内壁面、先端等の周辺部
分には、加工変質層10が形成される。この加工変質層
は、前記プラズマの高熱により凹所9の周辺部分が溶融
し、かつ該部分のガラス材料に含まれる比較的揮発し易
い成分が先に蒸発して、その組成が変化し、元のガラス
材料よりアルミナ等のYAGレーザを吸収し易い成分の
割合が多くなったものである。従って、2番目以降のパ
ルスが照射されると、加工変質層10がそのレーザエネ
ルギを吸収して蒸発又は飛散し、図2(c)のように加
工穴11が成長する。加工穴11の内壁面、先端には、
同様に加工変質層10が形成される。従って、更にパル
ス照射を続けることにより、最終的に図2(d)に示す
ような貫通穴が完成する。実際に、レーザの集光径を1
0μm程度に絞ることにより、直径約20〜30μmの
貫通穴を形成できた。A damaged layer 10 is formed on the periphery of the recess 9, such as the opening, the inner wall surface, and the tip. In the deteriorated layer, the peripheral portion of the recess 9 is melted by the high heat of the plasma, and the relatively volatile components contained in the glass material in the portion evaporate first, and the composition changes, and the original material changes. The ratio of the component that easily absorbs the YAG laser, such as alumina, is larger than that of the glass material. Therefore, when the second and subsequent pulses are irradiated, the affected layer 10 absorbs the laser energy and evaporates or scatters, and the processed hole 11 grows as shown in FIG. On the inner wall surface and tip of the processing hole 11,
Similarly, the affected layer 10 is formed. Therefore, by continuing pulse irradiation, a through hole as shown in FIG. 2D is finally completed. Actually, the focusing diameter of the laser is 1
By squeezing to about 0 μm, a through hole having a diameter of about 20 to 30 μm could be formed.
【0035】或る実施例では、レーザ光の照射以前にガ
ラス基板6を例えば200〜300℃程度の温度に予め
加熱しておく。これにより、レーザ光の照射時に、ガラ
ス基板内部における急激な温度上昇が回避されるので、
クラックの発生を有効に抑制することができる。In one embodiment, the glass substrate 6 is preheated to a temperature of, for example, about 200 to 300 ° C. before the irradiation with the laser beam. This avoids a sharp rise in temperature inside the glass substrate during laser light irradiation,
The generation of cracks can be effectively suppressed.
【0036】ガラス基板6表面に残存する顔料8の大部
分は、適当な溶剤により洗浄することができる。しか
し、一部の顔料は、照射レーザの高熱によってガラス基
板表面に焼き付き、溶剤では容易に除去できない。ま
た、加工穴11から飛散した溶融物の一部は、加工穴の
入射側及び出射側開口周辺に再付着してドロスとなる。
このような顔料の焼き付き及びドロスは、加工穴11の
形成後にガラス基板の両面を公知の方法で研磨加工する
ことにより除去することができる。同時に、この研磨加
工によってガラス基板6表面に残る加工変質層を除去す
ることができる。Most of the pigment 8 remaining on the surface of the glass substrate 6 can be washed with a suitable solvent. However, some pigments burn on the glass substrate surface due to the high heat of the irradiation laser and cannot be easily removed with a solvent. In addition, a part of the melt scattered from the processing hole 11 is re-attached to the vicinity of the entrance side and the exit side opening of the processing hole and becomes dross.
Such burn-in and dross of the pigment can be removed by polishing both sides of the glass substrate by a known method after forming the processing hole 11. At the same time, the affected layer remaining on the surface of the glass substrate 6 can be removed by this polishing.
【0037】別の実施例では、図3に示すように、コン
ピュータ5から異なるパルス幅のレーザ発振信号S1 、
S2 が出力され、これに対応して前記レーザ発振器は、
最初のパルス列p1 のピーク出力がその後に続くパルス
列p2 のピーク出力より小さいパルスYAGレーザを出
力する。上述したように、最初のパルス列p1 の最初の
パルスp11はピークが過大になるので、コンピュータか
らのシャッタ信号SQによりシャッタ手段4をオンオフ
動作させてカットする。このようにして被加工物表面
に、最初にピーク出力の小さい3つのパルスp1 が照射
され、その後にピーク出力の大きいパルスp2 が連続し
て照射される。In another embodiment, as shown in FIG. 3, the laser oscillation signals S 1,
S2 is output, and the laser oscillator correspondingly outputs
A pulse YAG laser is output in which the peak output of the first pulse train p1 is smaller than the peak output of the succeeding pulse train p2. As described above, since the peak of the first pulse p11 of the first pulse train p1 becomes excessive, the shutter means 4 is turned on / off by the shutter signal SQ from the computer and cut. In this manner, the surface of the workpiece is first irradiated with three pulses p1 having a small peak output, and thereafter, continuously irradiated with a pulse p2 having a large peak output.
【0038】図2の実施例と同様に、最初のパルス列p
1 が照射されると、そのレーザエネルギを顔料が吸収し
て高温・高圧のプラズマ状態を被加工物表面に発生させ
る。しかし、図2の実施例に比して照射されるエネルギ
が小さいので、被加工物表面層は、部分的に溶融して加
工変質層を形成するだけで、凹所は形成されない。この
後に連続してパルスp2 が照射されると、そのレーザエ
ネルギを加工変質層が吸収して蒸発又は飛散することに
より、図2の実施例と同様に加工穴が成長し、最終的に
貫通穴を完成させることができる。この実施例では、最
初の照射エネルギを小さくしたので、加工開始時に被加
工物表面に作用する熱応力が幾分軽減され、クラックの
発生が抑制される。As in the embodiment of FIG. 2, the first pulse train p
When 1 is irradiated, the pigment absorbs the laser energy to generate a high-temperature and high-pressure plasma state on the surface of the workpiece. However, since the irradiation energy is smaller than that in the embodiment of FIG. 2, the workpiece surface layer is only partially melted to form a work-affected layer, and no recess is formed. When a pulse p2 is continuously irradiated thereafter, the laser energy is absorbed by the damaged layer and evaporated or scattered, whereby a processed hole grows as in the embodiment of FIG. Can be completed. In this embodiment, since the initial irradiation energy is reduced, the thermal stress acting on the surface of the workpiece at the start of processing is somewhat reduced, and the generation of cracks is suppressed.
【0039】尚、ピーク出力の小さい最初のパルスp1
は3つに限定されるものでなく、被加工物表面層に加工
変質層が形成される限り、1つであってもいくつであっ
ても良い。The first pulse p1 having a small peak output
Is not limited to three, and may be one or any number as long as a damaged layer is formed on the surface layer of the workpiece.
【0040】また、或る実施例では、レーザ光を直線偏
光ではなく、ランダム偏光又は円偏光に変換して照射す
る。直線偏光では、加工穴内壁に対してp偏光で入射す
る場合に、加工穴内壁に対してs偏光で入射する場合よ
りもガラス材料の光吸収率が大きいため、p偏光の入射
方向に加工がより促進され、入射部付近にクラックが発
生し易く、かつ加工穴が真っ直ぐ形成されずに曲がって
しまう虞がある。これに対し、ランダム偏光及び円偏光
では、s偏光・p偏光がランダムに照射されたりs偏光
・p偏光の偏りがないので、図4(a)、(b)に示す
ように、加工穴が真っ直ぐに形成されると共に、入射部
付近でのクラック発生が抑制される。In one embodiment, the laser beam is not linearly polarized but is converted into random or circularly polarized light for irradiation. With linearly polarized light, when p-polarized light is incident on the inner wall of the processing hole, the light absorption of the glass material is larger than when the light is incident on the inner wall of the processing hole as s-polarized light. There is a possibility that cracks are likely to be generated near the incident portion, and the processed hole is bent without being formed straight. On the other hand, in the case of the randomly polarized light and the circularly polarized light, the s-polarized light and the p-polarized light are randomly irradiated and there is no deviation of the s-polarized light and the p-polarized light. Therefore, as shown in FIGS. In addition to being formed straight, crack generation near the incident part is suppressed.
【0041】また、上記実施例では、基本波(1064
μm)のQスイッチYAGレーザを使用したが、図1に
関連して上述したように非線形結晶を配置することによ
り、第2高調波(532μm)又は第三高調波(355
μm)のQスイッチYAGレーザを用いることができ
る。この場合にも、比較的低い出力で高いパワー密度が
得られ、これを顔料を付着させた被加工物表面に照射す
ることによって、ガラスに微細穴を加工することができ
る。In the above embodiment, the fundamental wave (1064)
μm) Q-switched YAG laser was used, but by placing the nonlinear crystal as described above in connection with FIG. 1, the second harmonic (532 μm) or the third harmonic (355
μm) Q-switched YAG laser can be used. Also in this case, a high power density can be obtained with a relatively low output, and by irradiating this with the surface of the workpiece to which the pigment is attached, it is possible to process fine holes in the glass.
【0042】更に別の実施例では、図1のレーザ加工装
置において、図5に示すように、集光レンズ3の手前の
光路内に公知の位相格子12を追加し、レーザ光Bを該
位相格子を通過した後に集光レンズ3に入射させること
ができる。レーザ光Bは、位相格子12を通過すると、
元の1本のビームが複数のビームに分岐され、各分岐ビ
ームがそれぞれ集光レンズ3により集光されて被加工物
6表面に照射される。従って、被加工物6表面の前記分
岐ビームに対応する複数の位置に微細穴を同時に加工す
ることができ、加工時間が短縮されて生産性が向上す
る。In another embodiment, as shown in FIG. 5, a known phase grating 12 is added to the optical path before the condenser lens 3 in the laser processing apparatus of FIG. After passing through the grating, the light can be incident on the condenser lens 3. When the laser beam B passes through the phase grating 12,
One original beam is split into a plurality of beams, and each split beam is condensed by the condenser lens 3 and irradiated onto the surface of the workpiece 6. Therefore, micro holes can be simultaneously formed at a plurality of positions on the surface of the workpiece 6 corresponding to the branch beams, and the processing time is shortened and the productivity is improved.
【0043】図6は、本発明の第2実施例の方法により
ガラス基板に微細穴を形成する過程を概略的に示してい
る。この実施例では、ガラス基板13が、使用するレー
ザ光を吸収し易い吸光物質を予め含む組成のガラスで形
成されている。そのため、ガラス基板13表面に顔料を
付着させる必要がなく、図6(a)に示すようにレーザ
光Bを直接照射する。このようなガラスとして、例えば
ネオセラムがあり、吸光物質であるアルミナを20数%
含んでいる。その他に、ソーダガラスなどのガラスや、
ニオブ酸リチウム、タンタル酸リチウムなどの結晶を含
む透明材料に適用することができる。FIG. 6 schematically shows a process of forming fine holes in a glass substrate by the method according to the second embodiment of the present invention. In this embodiment, the glass substrate 13 is formed of glass having a composition containing a light-absorbing substance that easily absorbs a laser beam to be used. Therefore, it is not necessary to attach a pigment to the surface of the glass substrate 13, and the laser beam B is directly irradiated as shown in FIG. As such a glass, for example, there is neoceram, and alumina, which is a light-absorbing substance, is contained in an amount of about 20% or more.
Contains. In addition, glass such as soda glass,
The present invention can be applied to a transparent material including a crystal such as lithium niobate and lithium tantalate.
【0044】使用するレーザは、上記第1実施例と同じ
基本波、第二高調波又は第三高調波のQスイッチパルス
YAGレーザであり、その他の加工条件も全く同じであ
る。最初のパルスが照射されると、その部分の表面層に
含まれる前記吸光物質がレーザエネルギを吸収して高熱
を発生し、それによりその部分のガラスが溶融し、蒸発
又は飛散して図6(b)に示すような凹所9と、その周
辺部分に加工変質層10とを形成する。そして、2番目
以降のパルスのレーザエネルギを加工変質層10が吸収
して蒸発又は飛散することにより、加工穴11が図6
(c)に示すように成長し、最終的に図6(d)に示す
ような貫通穴が形成される。The laser used is the same fundamental, second harmonic or third harmonic Q-switched pulse YAG laser used in the first embodiment, and the other processing conditions are exactly the same. When the first pulse is applied, the light absorbing material contained in the surface layer of the portion absorbs the laser energy and generates high heat, whereby the glass of the portion is melted, evaporated or scattered, and FIG. A recess 9 as shown in b) and a damaged layer 10 are formed around the recess 9. The laser beam energy of the second and subsequent pulses is absorbed by the damaged layer 10 and evaporated or scattered.
It grows as shown in (c), and finally a through hole as shown in FIG. 6 (d) is formed.
【0045】[0045]
【実施例】本発明の第1実施例によるレーザ加工方法を
用いて、硬質ガラスの一種で「パイレックス」(商標)
の商品名で市販されているホウケイ酸ガラスの薄板(厚
さ1mm)に微細穴あけ加工を行った。顔料として、市販
のマジックインキに使用されている合成樹脂インクを使
用し、スピンコートによりガラス薄板表面に付着させ
た。発振周波数1kHz、平均出力400mW、波長5
32μmのQスイッチパルスYAGレーザ、f100mm
の集光レンズを使用した。その他の加工条件は次の3通
りである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Using a laser processing method according to a first embodiment of the present invention, a type of hard glass, Pyrex.TM.
Was made into a thin plate (thickness: 1 mm) of borosilicate glass commercially available under the trade name No. As a pigment, a synthetic resin ink used in a commercially available magic ink was used, and attached to the surface of a glass thin plate by spin coating. Oscillation frequency 1kHz, average output 400mW, wavelength 5
32μm Q-switched pulse YAG laser, f100mm
Was used. Other processing conditions are as follows.
【0046】(実施例1) レーザのパルスエネルギ: 400mJ 照射パルス数 : 400/秒 (実施例2) レーザのパルスエネルギ: 400mJ 照射パルス数 : 200/秒 (実施例3) レーザのパルスエネルギ: 400mJ 照射パルス数 : 300/秒(Example 1) Laser pulse energy: 400 mJ Irradiation pulse number: 400 / sec (Example 2) Laser pulse energy: 400 mJ Irradiation pulse number: 200 / sec (Example 3) Laser pulse energy: 400 mJ Irradiation pulse number: 300 / sec
【0047】これら実施例1〜3のいずれの場合にも、
ガラス基板に真っ直ぐな微細穴を加工することができ
た。また、ガラス基板の入射面を加工後に洗浄したとこ
ろ、加工穴の開口は概ね円形で、その周囲にクラックは
ほとんど認められなかった。この結果から、本発明のレ
ーザ加工方法によれば、低出力のレーザを用いて高品質
な微細穴を高速で加工し得ることが分かる。In any of the first to third embodiments,
Straight fine holes could be machined in the glass substrate. Further, when the incident surface of the glass substrate was cleaned after processing, the opening of the processing hole was substantially circular, and almost no cracks were observed around the opening. From these results, it is understood that according to the laser processing method of the present invention, high-quality fine holes can be processed at high speed using a low-output laser.
【0048】[0048]
【発明の効果】本発明は、以上のように構成されている
ので、以下に記載されるような効果を奏する。本発明の
透明材料のレーザ加工方法によれば、集光性の高いQス
イッチパルス発振レーザを用いてパワー密度を大きく
し、かつガラスなどの透明材料からなる被加工物の表面
に付着させた吸光物質にレーザ光を吸収させることによ
り、数ワット程度の低いレーザ出力で、従来はレーザ加
工が困難であった材質を含む様々な透明材料に対して、
産業上実用的で高品質な微細深穴を高速かつ高精度に形
成することができ、しかもレーザ装置及び加工コストの
低減させることができる。Since the present invention is configured as described above, it has the following effects. According to the laser processing method for a transparent material of the present invention, the power density is increased by using a Q-switched pulse oscillation laser having a high light-collecting property, and the light absorption attached to the surface of a workpiece made of a transparent material such as glass. By absorbing laser light into a substance, the laser output can be as low as several watts.
Industrially practical high-quality fine deep holes can be formed at high speed and with high accuracy, and the laser device and processing costs can be reduced.
【0049】また、本発明の別の側面によれば、同様に
Qスイッチパルス発振レーザを使用し、ガラスなどの透
明材料からなる被加工物に含まれる吸光物質にレーザ光
を吸収させることにより、低いレーザ出力で微細な穴あ
け加工をよりスムーズに行うことができる。According to another aspect of the present invention, a laser light is absorbed by a light absorbing material contained in a workpiece made of a transparent material such as glass, similarly using a Q-switched pulsed laser. Fine drilling can be performed more smoothly with low laser output.
【図1】本発明の実施に適したレーザ加工装置の典型例
を示す概略構成図。FIG. 1 is a schematic configuration diagram showing a typical example of a laser processing apparatus suitable for carrying out the present invention.
【図2】(a)図〜(d)図は、本発明の第1実施例の
方法によりガラス基板に微細穴を形成する過程を概略的
に示す断面図。FIGS. 2A to 2D are cross-sectional views schematically showing a process of forming fine holes in a glass substrate by the method according to the first embodiment of the present invention.
【図3】図1の装置においてレーザ光を発振させるレー
ザ発振信号、発振パルス、シャッタ信号、照射パルスを
示す線図。FIG. 3 is a diagram showing a laser oscillation signal, an oscillation pulse, a shutter signal, and an irradiation pulse for oscillating laser light in the apparatus of FIG.
【図4】(a)図及び(b)図は、それぞれレーザ光を
円偏光及びランダム偏光にした場合の加工穴の状態を示
す断面図。FIGS. 4A and 4B are cross-sectional views showing a state of a processed hole when laser light is circularly polarized light and random polarized light, respectively.
【図5】位相格子を用いた光学系による微細穴あけ加工
を示す概略図。FIG. 5 is a schematic diagram showing fine drilling by an optical system using a phase grating.
【図6】(a)図〜(d)図は、本発明の第2実施例の
方法によりガラス基板に微細穴を形成する過程を概略的
に示す断面図。FIGS. 6A to 6D are cross-sectional views schematically showing a process of forming fine holes in a glass substrate by a method according to a second embodiment of the present invention.
1 レーザ発振器 2 ミラー 3 集光レンズ 4 シャッタ手段 5 コンピュータ 6 被加工物 7 非線形結晶 8 顔料 9 凹所 10 加工変質層 11 加工穴 12 位相格子 13 ガラス基板 DESCRIPTION OF SYMBOLS 1 Laser oscillator 2 Mirror 3 Condensing lens 4 Shutter means 5 Computer 6 Workpiece 7 Non-linear crystal 8 Pigment 9 Concave part 10 Degradation layer 11 Processing hole 12 Phase grating 13 Glass substrate
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) C03C 23/00 C03C 23/00 D 5F072 G02B 5/30 G02B 5/30 H01S 3/11 H01S 3/11 // B41J 2/135 B41J 3/04 103N Fターム(参考) 2C057 AF93 AG12 AP13 AP22 AP23 AP43 AP57 AQ01 2H049 BA03 BA06 BA13 BC21 4E068 AA03 AF01 AF02 AJ03 CA02 CA03 CA04 CD04 CD05 CK01 DA09 DB13 4G015 FA09 FB01 FB02 FC10 FC14 4G059 AA08 AB02 AB05 AB07 AC30 5F072 AB01 HH07 KK12 QQ02 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) C03C 23/00 C03C 23/00 D 5F072 G02B 5/30 G02B 5/30 H01S 3/11 H01S 3/11 // B41J 2 / 135 B41J 3/04 103N F-term (reference) 2C057 AF93 AG12 AP13 AP22 AP23 AP43 AP57 AQ01 2H049 BA03 BA06 BA13 BC21 4E068 AA03 AF01 AF02 AJ03 CA02 CA03 CA04 CD04 CD05 CK01 DA09 DB13 4G015 FA09 FB01 AB02 FC10 AB08 AC30 5F072 AB01 HH07 KK12 QQ02
Claims (15)
物質を付着させ、前記吸光物質を付着させた前記被加工
物表面に向けてQスイッチパルス発振レーザを照射し
て、該表面に穴を形成することを特徴とする透明材料の
レーザ加工方法。A light-absorbing substance is attached to the surface of a workpiece made of a transparent material, and a Q-switched pulse oscillation laser is irradiated toward the surface of the workpiece to which the light-absorbing substance is attached, and a hole is formed on the surface. And a laser processing method for a transparent material.
あることを特徴とする請求項1に記載の透明材料のレー
ザ加工方法。2. The method according to claim 1, wherein the laser beam has a single mode.
とする請求項1又は2に記載の透明材料のレーザ加工方
法。3. The laser processing method for a transparent material according to claim 1, wherein a fundamental wave of the laser is used.
特徴とする請求項1又は2に記載の透明材料のレーザ加
工方法。4. The laser processing method for a transparent material according to claim 1, wherein a second harmonic of the laser is used.
特徴とする請求項1又は2に記載の透明材料のレーザ加
工方法。5. The laser processing method for a transparent material according to claim 1, wherein a third harmonic of the laser is used.
スのエネルギがそれより後のパルスのエネルギより小さ
いことを特徴とする請求項1乃至5のいずれかに記載の
透明材料のレーザ加工方法。6. The laser processing method for a transparent material according to claim 1, wherein the energy of the first one or more pulses of the laser is smaller than the energy of the subsequent pulses. .
面に照射することを特徴とする請求項1乃至6のいずれ
かに記載の透明材料のレーザ加工方法。7. The laser processing method for a transparent material according to claim 1, wherein the laser is irradiated with circularly polarized light on the surface of the workpiece.
工物表面に照射することを特徴とする請求項1乃至6の
いずれかに記載の透明材料のレーザ加工方法。8. The laser processing method for a transparent material according to claim 1, wherein the laser is irradiated with a randomly polarized light on the surface of the workpiece.
前記被加工物表面に照射することを特徴とする請求項1
乃至8のいずれかに記載の透明材料のレーザ加工方法。9. The method according to claim 1, wherein the laser beam is split by a phase grating and irradiated on the surface of the workpiece.
9. The laser processing method for a transparent material according to any one of items 1 to 8.
に含むことを特徴とする請求項1乃至9のいずれかに記
載の透明材料のレーザ加工方法。10. The laser processing method for a transparent material according to claim 1, further comprising a step of preheating the workpiece.
質にかつ均一な厚さに付着させることを特徴とする請求
項1乃至10のいずれかに記載の透明材料のレーザ加工
方法。11. The laser processing method for a transparent material according to claim 1, wherein the light absorbing substance is attached to the surface of the workpiece in a uniform and uniform thickness.
該穴の開口周辺部分を研磨する過程を更に含むことを特
徴とする請求項1乃至11のいずれかに記載の透明材料
のレーザ加工方法。12. After forming a hole in the surface of the workpiece,
12. The laser processing method for a transparent material according to claim 1, further comprising a step of polishing a peripheral portion of the hole.
工物の表面に向けてQスイッチパルス発振レーザを照射
し、該表面に穴を形成することを特徴とする透明材料の
レーザ加工方法。13. A laser processing method for a transparent material, comprising irradiating a surface of a workpiece made of a transparent material containing a light absorbing substance with a Q-switch pulse oscillation laser to form a hole in the surface.
ことを特徴とする請求項1又は13に記載の透明材料の
レーザ加工方法。14. The laser processing method for a transparent material according to claim 1, wherein the transparent material is glass or a crystal.
スイッチパルス発振のYAGレーザ、YLFレーザ又は
YVOレーザであることを特徴とする請求項1又は13
に記載の透明材料のレーザ加工方法。15. The Q-switched pulse oscillation laser is
14. A switch pulse oscillation YAG laser, YLF laser or YVO laser.
2. The laser processing method for a transparent material according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11116767A JP2000301372A (en) | 1999-04-23 | 1999-04-23 | Laser processing method of transparent material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11116767A JP2000301372A (en) | 1999-04-23 | 1999-04-23 | Laser processing method of transparent material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000301372A true JP2000301372A (en) | 2000-10-31 |
Family
ID=14695235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11116767A Pending JP2000301372A (en) | 1999-04-23 | 1999-04-23 | Laser processing method of transparent material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000301372A (en) |
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