JP2000300931A - Gas treatment equipment - Google Patents
Gas treatment equipmentInfo
- Publication number
- JP2000300931A JP2000300931A JP11109455A JP10945599A JP2000300931A JP 2000300931 A JP2000300931 A JP 2000300931A JP 11109455 A JP11109455 A JP 11109455A JP 10945599 A JP10945599 A JP 10945599A JP 2000300931 A JP2000300931 A JP 2000300931A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- tray
- processing
- liquid
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 claims abstract description 44
- 206010011469 Crying Diseases 0.000 claims description 12
- 230000002745 absorbent Effects 0.000 claims description 5
- 239000002250 absorbent Substances 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000006477 desulfuration reaction Methods 0.000 description 3
- 230000023556 desulfurization Effects 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 239000010440 gypsum Substances 0.000 description 3
- 229910052602 gypsum Inorganic materials 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 235000019738 Limestone Nutrition 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Landscapes
- Gas Separation By Absorption (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、脱硫装置や吸収装
置などのガス処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas treatment device such as a desulfurization device and an absorption device.
【０００２】[0002]
【従来の技術】従来、ガス中の目的成分を吸収除去など
の処理を行う場合、スプレー方式とトレイ方式とが用い
られている。2. Description of the Related Art Conventionally, when a process such as absorption and removal of a target component in a gas is performed, a spray system and a tray system are used.
【０００３】スプレー方式は、処理ガス中に吸収液など
をスプレーして処理ガス中の目的成分と反応させて、処
理ガスから目的成分を吸収除去するもので、トレイ方式
は、複数の棚段の上段から吸収液を流し、棚段の下方か
ら処理ガスを流し、各棚段のトレイ部で吸収液と処理ガ
スを接触させて処理ガス中の目的成分を吸収除去するも
のである。[0003] The spray method is a method in which an absorbing solution or the like is sprayed into a processing gas to react with a target component in the processing gas to absorb and remove the target component from the processing gas. The absorbing liquid flows from the upper stage, the processing gas flows from below the shelf, and the absorbing liquid and the processing gas are brought into contact with the tray of each shelf to absorb and remove the target component in the processing gas.
【０００４】このスプレー方式では、処理ガス中の目的
成分濃度が低い場合に有効であり、トレイ方式では目的
成分濃度が高い場合に有効である。The spray method is effective when the concentration of the target component in the processing gas is low, and the tray method is effective when the concentration of the target component is high.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、処理す
る目的成分が高濃度の場合、多段トレイ、スプレー塔ま
たは複数塔が必要であり、トレイ又はスプレー段或いは
塔を複数設置するため設備費が増大する問題がある。However, when the target component to be treated has a high concentration, a multi-stage tray, a spray tower or a plurality of towers are required, and equipment costs increase due to the installation of a plurality of trays or spray stages or towers. There's a problem.
【０００６】また、操作圧力が常圧の場合、処理ガス温
度を下げてから処理装置内に導入する必要があるが、こ
のためには装置の前段にガス冷却器を設置する必要があ
り、コストが高くなる問題がある。[0006] When the operating pressure is normal pressure, it is necessary to lower the temperature of the processing gas before introducing it into the processing apparatus. For this purpose, it is necessary to install a gas cooler in the preceding stage of the apparatus, which results in cost reduction. There is a problem that becomes high.
【０００７】そこで、本発明の目的は、上記課題を解決
し、処理ガス中の目的成分濃度が高くこれを極微量にす
るなど幅広い濃度のガスに対応できるガス処理装置を提
供することにある。It is an object of the present invention to solve the above-mentioned problems and to provide a gas processing apparatus capable of coping with a wide range of concentrations of gas, for example, having a high concentration of a target component in a processing gas and making the concentration extremely small.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、請求項１の発明は、処理ガス中に含まれる高濃度の
目的成分を除去するガス処理装置において、処理塔内に
多段にトレイを設けてトレイ部を形成すると共にそのト
レイ部の下方の処理塔に処理ガスの導入口を形成すると
共に頂部に排出口を形成し、処理塔の底部に液溜め部を
形成すると共にその液溜め部の吸収液をトレイ部の上段
に流す液循環ラインを設け、トレイ部の下方に吸収液と
処理ガスを強制的に接触させるウイーピング段を形成し
たガス処理装置である。In order to achieve the above object, the present invention is directed to a gas processing apparatus for removing a high-concentration target component contained in a processing gas in a multistage tray in a processing tower. To form a tray part, form a processing gas inlet in the processing tower below the tray part, form a discharge port at the top, form a liquid reservoir at the bottom of the processing tower, and store the liquid in the processing tower. Is a gas processing apparatus provided with a liquid circulation line for flowing the absorbing liquid in the upper part of the tray part, and a weeping step for forcibly bringing the absorbing liquid into contact with the processing gas below the tray part.
【０００９】[0009]
【発明の実施の形態】以下、本発明の好適一実施の形態
を添付図面に基づいて詳述する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below in detail with reference to the accompanying drawings.
【００１０】図１において、１０は処理塔で、底部に、
吸収液１１の液溜め部１２が形成され、その液溜め部１
２の上方の処理塔１０の側面に処理ガスＧの導入口１３
が形成され、頂部に排出口１４が形成される。In FIG. 1, reference numeral 10 denotes a treatment tower, and at the bottom,
A liquid reservoir 12 for absorbing liquid 11 is formed, and the liquid reservoir 1
The inlet 13 of the processing gas G is provided on the side of the processing tower 10 above
Is formed, and an outlet 14 is formed at the top.
【００１１】処理塔１０は、液溜め部１２より、処理ガ
スが流れる上部１５が縮径されて形成される。The processing tower 10 is formed by reducing the diameter of the upper part 15 through which the processing gas flows from the liquid reservoir 12.
【００１２】この処理塔１０の上部１５に、多段のトレ
イ１６からなるトレイ部１７が設けられる。At the upper part 15 of the processing tower 10, a tray part 17 including a multi-stage tray 16 is provided.
【００１３】トレイ１６は、各段で左右交互に切り欠か
れると共にその切り欠き部に各段の吸収液を下方に流下
させるダウンカマー１８が設けられる。このダウンカマ
ー１８は、その上部で、そのトレイ１６上の吸収液層１
９の堰を形成すると共に下端が、下方の吸収液層１９に
浸ってトレイ１６間を上昇する処理ガスのシールを行う
と共に吸収液の流下路２０を形成するようになってい
る。The tray 16 is notched alternately in each stage at the right and left, and a downcomer 18 is provided in the notch to allow the absorbent in each stage to flow downward. The downcomer 18 is placed on top of the absorbent layer 1 on the tray 16.
Nine weirs are formed and the lower end is immersed in the lower absorbing liquid layer 19 to seal the processing gas ascending between the trays 16 and to form a flowing path 20 for the absorbing liquid.
【００１４】最上段のトレイ１６には、液溜め部１２内
の吸収液１１が、循環ポンプ２１、循環ライン２２を介
して供給されるようになっている。The uppermost tray 16 is supplied with the absorbent 11 in the liquid reservoir 12 through a circulation pump 21 and a circulation line 22.
【００１５】トレイ部１７の下方には、吸収液１１を直
接液溜め部１２に流下させると共に処理ガスを通過させ
て強制的に気液接触させる多孔板からなるウイーピング
段２３が設けられる。Below the tray 17, there is provided a weeping stage 23 made of a perforated plate for allowing the absorbing liquid 11 to flow directly to the liquid reservoir 12 and for allowing the processing gas to pass therethrough for forcible gas-liquid contact.
【００１６】このトレイ部１７では、その最上段のトレ
イ１６に供給された吸収液が、ダウンカマー１８から適
宜オーバーフローしながら順次下段のトレイ１６に流下
し、トレイ部１７からその下方のウイーピング段２３を
介して液溜め部１２に流下するようにされ、処理ガス
は、ウイーピング段２３を通り、トレイ部１７の各段の
トレイ１６を通って、その吸収液層１９内に吹き込まれ
て気液接触しながら上昇するようになっている。In the tray section 17, the absorbing liquid supplied to the uppermost tray 16 flows down from the downcomer 18 to the lower tray 16 while appropriately overflowing, and from the tray section 17 to the lower weeping step 23. The processing gas passes through the weeping stage 23, passes through the tray 16 of each stage of the tray unit 17, is blown into the absorbing liquid layer 19, and is contacted with the gas-liquid contact. While ascending.
【００１７】次に、本実施の形態の作用を説明する先
ず、液溜め部１２内の吸収液１１は循環ポンプ２１、循
環ライン２２を介してトレイ部１７の上段のトレイ１６
上に供給されてトレイ１６上に吸収液層１９が形成さ
れ、適宜ダウンカマー１８からオーバーフローしながら
下段のトレイ１６に流下し、ウイーピング段２３で、シ
ャワー状になって液溜め部１２に落下する。Next, the operation of the present embodiment will be described. First, the absorbent 11 in the liquid reservoir 12 is supplied to the upper tray 16 via the circulation pump 21 and the circulation line 22.
Absorbing liquid layer 19 is supplied on tray 16 and formed on tray 16 and flows down to lower tray 16 while overflowing from downcomer 18 as appropriate, and falls into liquid reservoir 12 in the form of a shower at weaving stage 23. .
【００１８】ガス導入口１３から導入された処理ガス
は、先ずウイーピング段２３からシャワー状に落下する
吸収液と接触し、更にそのウイーピング段２３を通過し
ながら吸収液と激しく接触することで、処理ガス温度が
下がり、その後トレイ部１７の各段のトレイ１６上に形
成された吸収液層１９を通って処理ガス中の目的成分が
吸収液に吸収されて除去され、排出口１４から排気され
る。The processing gas introduced from the gas inlet 13 first comes into contact with the absorbing liquid falling in a shower form from the weeping stage 23, and further comes into intense contact with the absorbing liquid while passing through the weeping stage 23. After the gas temperature decreases, the target component in the processing gas is absorbed by the absorbing liquid and removed through the absorbing liquid layer 19 formed on the tray 16 of each stage of the tray section 17 and exhausted from the outlet 14. .
【００１９】通常、効能後の目的成分を吸収液で処理す
る場合は、初期は吸収液と処理ガスを激しく接触させた
方が有利であるが、全部が同じ接触状態では極低濃度ま
で処理しきれない。In general, when the target component after the treatment is treated with the absorbing solution, it is advantageous to bring the absorbing solution and the processing gas into intense contact at the initial stage. I can't.
【００２０】そこで本発明のようにトレイ部１７の下方
を強制ウイーピング段２３として粗処理部とすること
で、そのウイーピング段２３で気液が激しく接触するこ
とによってガス温度を下げると共に吸収除去率を高め、
その後トレイ部１７で、吸収液層１９と接触させること
で極低濃度まで目的成分を除去することが可能となる。Therefore, the lower portion of the tray section 17 is formed as a rough treatment section as a forced weeping step 23 as in the present invention, so that gas and liquid come into intense contact with the weeping step 23, thereby lowering the gas temperature and reducing the absorption and removal rate. Enhance
Thereafter, the target component can be removed to an extremely low concentration by bringing the tray component 17 into contact with the absorbing liquid layer 19.
【００２１】次により具体的な例を説明する。Next, a more specific example will be described.
【００２２】石炭ガス化複合発電（ＩＧＣＣ）において
は、ガス化炉で生成された石炭ガス化ガスを乾式脱硫し
た際、その脱硫剤の再生オフガスとして、特定成分とし
てＳＯ2 が数ｖｏｌ％（５〜６％）含んだ再生オフガス
が生成し、この再生オフガスを処理ガスとし、ＳＯ2 の
吸収除去として石灰石（ＣａＣＯ3 ）スラリーを吸収液
として処理する場合を説明する。In the integrated coal gasification combined cycle (IGCC), when a coal gasification gas generated in a gasification furnace is subjected to dry desulfurization, SO 2 as a specific component contains several vol% (5%) as a regeneration off gas of the desulfurization agent. A regeneration off-gas containing 〜6%) is used as a processing gas, and a limestone (CaCO 3 ) slurry is treated as an absorbing solution for absorbing and removing SO 2 .
【００２３】導入口１３から５〜６％のＳＯ2 を含んだ
処理ガス（再生オフガス，数１００℃）が、処理塔１０
内に導入され、ウイーピング段２３で激しく気液接触す
ることにより、１００℃以下に冷却され、トレイ部１７
の各トレイ１６上のＣａＣＯ3 スラリー吸収液と接触し
て、ＳＯ2 が亜硫酸石膏とされて吸収除去され、ＳＯ 2
の濃度が数１０ｐｐｍまでにされて排出口１４から排出
される。5-6% SO from inlet 13TwoIncluding
The processing gas (regeneration off gas, several hundred degrees Celsius) is supplied to the processing tower 10
And violent gas-liquid contact at the weeping stage 23
As a result, the temperature of the
CaCO on each tray 16ThreeContact with slurry absorption liquid
And SOTwoIs absorbed and removed as gypsum, Two
Is discharged from the outlet 14 after the concentration of
Is done.
【００２４】この際、トレイ部１７からウイーピング段
２３を通して落下した吸収液は、亜硫酸石膏となって液
溜め部１２に落下してくるが、液溜め部１２に酸化用の
空気を吹き込むことで亜硫酸石膏を石膏化させることが
できる。At this time, the absorbing liquid that has fallen from the tray section 17 through the weeping step 23 falls into the liquid reservoir section 12 as gypsum sulfite. Gypsum can be gypsumed.
【００２５】[0025]
【発明の効果】以上要するに本発明によれば、次のごと
き優れた効果を発揮する。In summary, according to the present invention, the following excellent effects are exhibited.
【００２６】（１）トレイ部の下方に処理ガスと吸収液
を激しく接触させるウイーピング段を設けることで、処
理ガスが高温でも冷却器が不要となりコストダウンが図
れる。(1) By providing a weeping stage under the tray section for intense contact between the processing gas and the absorbing liquid, a cooler becomes unnecessary even when the processing gas is at a high temperature, and the cost can be reduced.
【００２７】（２）従来装置に比べて同じ性能を必要と
する場合、装置をコンパクトにすることができる。(2) When the same performance is required as compared with the conventional apparatus, the apparatus can be made compact.
【図１】本発明の一実施の形態を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.
１０ 処理塔 １１ 吸収液 １２ 液溜め部 １３ 導入口 １４ 排出口 １６ トレイ １７ トレイ部 ２２ 液循環ライン ２３ ウイーピング段 DESCRIPTION OF SYMBOLS 10 Processing tower 11 Absorbing liquid 12 Liquid reservoir 13 Inlet 14 Outlet 16 Tray 17 Tray part 22 Liquid circulation line 23 Wiping stage
Claims (1)
を除去するガス処理装置において、処理塔内に多段にト
レイを設けてトレイ部を形成すると共にそのトレイ部の
下方の処理塔に処理ガスの導入口を形成すると共に頂部
に排出口を形成し、処理塔の底部に液溜め部を形成する
と共にその液溜め部の吸収液をトレイ部の上段に流す液
循環ラインを設け、トレイ部の下方に吸収液と処理ガス
を強制的に接触させるウイーピング段を形成したことを
特徴とするガス処理装置。In a gas processing apparatus for removing a high concentration of a target component contained in a processing gas, a tray is provided in multiple stages in a processing tower to form a tray portion, and a processing tower below the tray portion is processed. A gas inlet is formed and a discharge port is formed at the top, a liquid reservoir is formed at the bottom of the processing tower, and a liquid circulation line for flowing the absorbent in the liquid reservoir to the upper stage of the tray is provided. A gas treatment apparatus, wherein a weeping stage for forcibly bringing the absorption liquid and the processing gas into contact with each other is formed below the bottom surface of the gas treatment apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11109455A JP2000300931A (en) | 1999-04-16 | 1999-04-16 | Gas treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11109455A JP2000300931A (en) | 1999-04-16 | 1999-04-16 | Gas treatment equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000300931A true JP2000300931A (en) | 2000-10-31 |
Family
ID=14510681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11109455A Pending JP2000300931A (en) | 1999-04-16 | 1999-04-16 | Gas treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000300931A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105451860A (en) * | 2013-09-20 | 2016-03-30 | 斗山能捷斯有限责任公司 | Washing tower of flue gas purification device |
| CN118122088A (en) * | 2024-05-06 | 2024-06-04 | 青海华鑫再生资源有限公司 | Zinc is smelted with even acid mist purifier who sprays |
-
1999
- 1999-04-16 JP JP11109455A patent/JP2000300931A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105451860A (en) * | 2013-09-20 | 2016-03-30 | 斗山能捷斯有限责任公司 | Washing tower of flue gas purification device |
| US9776128B2 (en) | 2013-09-20 | 2017-10-03 | Doosan Lentjes Gmbh | Scrubber tower of a flue gas purification device |
| CN118122088A (en) * | 2024-05-06 | 2024-06-04 | 青海华鑫再生资源有限公司 | Zinc is smelted with even acid mist purifier who sprays |
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