JP2000348793A - Electric connector - Google Patents
Electric connectorInfo
- Publication number
- JP2000348793A JP2000348793A JP11160007A JP16000799A JP2000348793A JP 2000348793 A JP2000348793 A JP 2000348793A JP 11160007 A JP11160007 A JP 11160007A JP 16000799 A JP16000799 A JP 16000799A JP 2000348793 A JP2000348793 A JP 2000348793A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- elastomer layer
- contact
- layer
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 14
- 238000013459 approach Methods 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 abstract description 67
- 239000000806 elastomer Substances 0.000 abstract description 57
- 229910000679 solder Inorganic materials 0.000 abstract description 18
- 238000012360 testing method Methods 0.000 abstract description 10
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 34
- 239000000758 substrate Substances 0.000 description 33
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 24
- 230000006835 compression Effects 0.000 description 22
- 238000007906 compression Methods 0.000 description 22
- 229910052737 gold Inorganic materials 0.000 description 22
- 239000010931 gold Substances 0.000 description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000007689 inspection Methods 0.000 description 17
- 229910052759 nickel Inorganic materials 0.000 description 17
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 10
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 10
- 239000005060 rubber Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 9
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 7
- 239000005018 casein Substances 0.000 description 7
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 7
- 235000021240 caseins Nutrition 0.000 description 7
- 229920002379 silicone rubber Polymers 0.000 description 7
- 239000004945 silicone rubber Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000004697 Polyetherimide Substances 0.000 description 6
- 229920001601 polyetherimide Polymers 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000004310 lactic acid Substances 0.000 description 5
- 235000014655 lactic acid Nutrition 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000009933 burial Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、表面実装型ICパ
ッケージの検査や接続等に使用される電気コネクタの改
良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in an electrical connector used for inspection and connection of a surface mount type IC package.
【0002】[0002]
【従来の技術】ICパッケージには様々なタイプがある
が、入出力の電極数の多い表面実装型タイプとして、図
31や図32に示すように、パッケージの裏面全体に電
極である複数の半田ボール17、あるいはランド形を呈
した複数の電極を格子形に並設したボールグリッドアレ
イ型ICパッケージ(以下、BGAと略称する)16やラ
ンドグリッドアレイ型ICパッケージ(以下、LGAと
略称する)が開発され、その実用化が進んでいる。2. Description of the Related Art There are various types of IC packages. As shown in FIGS. 31 and 32, a plurality of solder packages, which are electrodes, are provided on the entire back surface of the package as a surface mount type having a large number of input / output electrodes. A ball grid array type IC package (hereinafter abbreviated as BGA) 16 and a land grid array type IC package (hereinafter abbreviated as LGA) 16 in which a plurality of balls 17 or land-shaped electrodes are arranged in a grid shape are provided. It has been developed and its practical use is progressing.
【0003】この種のBGA16やLGAを検査基板で
検査したり、あるいは接続する場合には、図33に示す
電気コネクタが使用される。この電気コネクタは、同図
に示すように、検査基板14とBGA16の間に介在さ
れる弾性絶縁性のエラストマー層9を備え、このエラス
トマー層9の上下厚さ方向に一定ピッチで相互に離隔す
る複数のワイヤ7が埋設されており、各ワイヤ7の下端
部がエラストマー層9の裏面から僅かに露出して小さな
ボール端子21として機能するとともに、各ワイヤ7の
上端部がエラストマー層9の表面に略同位して微小なパ
ッド22を形成する。When inspecting or connecting this type of BGA 16 or LGA with an inspection board, an electrical connector shown in FIG. 33 is used. As shown in the figure, the electrical connector includes an elastic insulating elastomer layer 9 interposed between the inspection board 14 and the BGA 16, and is separated from each other at a constant pitch in the vertical thickness direction of the elastomer layer 9. A plurality of wires 7 are embedded, and the lower end of each wire 7 is slightly exposed from the back surface of the elastomer layer 9 to function as a small ball terminal 21, and the upper end of each wire 7 is placed on the surface of the elastomer layer 9. A minute pad 22 is formed substantially at the same position.
【0004】上記構成において、検査基板14とBGA
16とを電気的に導通させる場合、検査基板14とBG
A16とに電気コネクタを挟持させ、検査基板14の複
数の電極15にワイヤ7のボール端子21を、BGA1
6の複数の半田ボール17にワイヤ7のパッド22をそ
れぞれ接触させる。そして、BGA16を押圧圧下して
荷重を加え、検査基板14とBGA16とを相互に接近
させれば、これらを電気コネクタを介し電気的に導通さ
せることができる。In the above configuration, the inspection board 14 and the BGA
16 is electrically connected to the inspection board 14 and the BG
A16, an electrical connector is sandwiched between the plurality of electrodes 15 of the inspection board 14 and the ball terminals 21 of the wires 7 are attached to the BGA1.
The pads 22 of the wires 7 are respectively brought into contact with the plurality of solder balls 17. Then, when a load is applied by pressing down the BGA 16 to bring the inspection board 14 and the BGA 16 closer to each other, they can be electrically connected via the electrical connector.
【0005】なお、この種の関連先行技術文献として、
特開平9−115577号、9−35789号、8−3
35486号、又は特許2796872号公報等があげ
られる。As related prior art documents of this kind,
JP-A-9-115577, 9-35789, 8-3
No. 35486, Japanese Patent No. 2796872, and the like.
【0006】[0006]
【発明が解決しようとする課題】従来の電気コネクタ
は、以上のように構成され、BGA16の半田ボール1
7に接触するパッド22の接触面積が非常に小さいの
で、半田ボール17やパッド22の位置精度等により電
極の接続抵抗がばらつきやすいという問題がある。ま
た、電極の多数化に伴い、安定した導通を得るのに必要
な圧縮荷重が増大するが、BGA16の平坦度(最大
0.15mm)を考慮すると、電気コネクタには0.1
5mm以上の圧縮量が必要になる。しかし、この場合の
圧縮荷重は大きいので、BGA16が破損するおそれが
あり、200ピン以上の多極BGA16に従来の電気コ
ネクタを使用することはきわめて困難である。The conventional electrical connector is constructed as described above, and the solder ball 1 of the BGA 16 is provided.
Since the contact area of the pad 22 in contact with the electrode 7 is very small, there is a problem that the connection resistance of the electrode tends to vary due to the positional accuracy of the solder ball 17 and the pad 22. Further, as the number of electrodes increases, the compressive load required to obtain stable conduction increases. However, in consideration of the flatness of BGA 16 (maximum 0.15 mm), the electrical connector requires 0.1%.
A compression amount of 5 mm or more is required. However, since the compressive load in this case is large, the BGA 16 may be damaged, and it is extremely difficult to use a conventional electrical connector for the multi-pole BGA 16 having 200 pins or more.
【0007】また、パッド22の突出が殆どないので、
平坦な板形であるLGAに対しては圧縮時にエラストマ
ー層9の逃げ場がなく、圧縮荷重がさらに増大して電気
コネクタを到底使用することができないという問題があ
る。さらに、0.15mm以上の圧縮で繰り返し検査に
使用されると、図34に示すように、エラストマー層9
内へのパッド22の埋没、損傷(エラストマー層9から
のパッド22の剥離)、ボール端子21の埋没、又は摩
耗等により接続抵抗が上昇するので、電気コネクタを繰
り返し使用することができなくなるという問題がある。Further, since the pad 22 hardly protrudes,
The LGA having a flat plate shape has a problem that the elastomer layer 9 has no escape during compression, and the compression load is further increased so that the electric connector cannot be used at all. Further, when repeatedly used for inspection at a compression of 0.15 mm or more, as shown in FIG.
The connection resistance increases due to the burial or damage of the pad 22 inside (peeling of the pad 22 from the elastomer layer 9), the burial of the ball terminal 21, or the abrasion, so that the electrical connector cannot be used repeatedly. There is.
【0008】本発明は、上記問題に鑑みなされたもの
で、電極の接続抵抗のばらつきを防止し、多極の電子部
品にも使用することができ、所定値以上の荷重で繰り返
し使用しても接続抵抗が上昇するのを抑制防止すること
のできる電気コネクタを提供することを目的としてい
る。The present invention has been made in view of the above problems, and prevents variations in connection resistance of electrodes, can be used for multi-pole electronic components, and can be used repeatedly even when a load equal to or more than a predetermined value is used. It is an object of the present invention to provide an electrical connector that can prevent increase in connection resistance.
【0009】[0009]
【課題を解決するための手段】請求項1記載の発明にお
いては、上記課題を達成するため、第一、第二の電気的
接合物の間に挟まれ、これら第一、第二の電気的接合物
が荷重の作用に基づいて接近することにより、該第一、
第二の電気的接合物を導通させるものであって、上記第
一、第二の電気的接合物の間に介在される弾性絶縁層
と、この弾性絶縁層の厚さ方向に埋設され、一定ピッチ
で相互に離隔する複数の導電線条と、各導電線条の一端
部に接続されて該弾性絶縁層の裏面に露出し、上記第一
の電気的接合物の複数の電極にそれぞれ接触する接触面
積拡大用のめっき端子と、該各導電線条の他端部に接続
されて上記第二の電気的接合物の複数の電極にそれぞれ
接触する接触面積拡大用のパッド端子とを含み、該各パ
ッド端子の表裏両面をそれぞれめっきするとともに、各
パッド端子の一部を上記弾性絶縁層に埋没させて残部を
弾性絶縁層の表面から突出させたことを特徴としてい
る。According to the first aspect of the present invention, in order to achieve the above object, the first and second electric joints are interposed between the first and second electric joints. As the joint approaches under the action of the load, the first,
An elastic insulating layer interposed between the first and second electric joints, and buried in a thickness direction of the elastic insulating layer, wherein A plurality of conductive wires that are separated from each other at a pitch, and are connected to one end of each conductive wire and are exposed on the back surface of the elastic insulating layer to be in contact with the plurality of electrodes of the first electrical joint, respectively; A plating terminal for increasing the contact area, and a pad terminal for increasing the contact area, which is connected to the other end of each of the conductive wires and is in contact with the plurality of electrodes of the second electrical joint, respectively. It is characterized in that both the front and back surfaces of each pad terminal are plated, and a part of each pad terminal is buried in the elastic insulating layer, and the rest protrudes from the surface of the elastic insulating layer.
【0010】なお、上記弾性絶縁層の硬度を10°H〜
80°Hとし、上記各導電線条の少なくとも一部を該弾
性絶縁層の厚さ方向に交わる方向に傾斜又は屈曲させて
上記荷重を軽減するようにすることが好ましい。また、
上記各めっき端子を、上記各導電線条の一端部に接続さ
れて上記弾性絶縁層の裏面側に位置する第一のめっき層
と、この第一のめっき層を被覆する第二のめっき層とか
ら略半球形に形成し、上記各パッド端子の一部をその厚
さの略25%以上とすると良い。[0010] The elastic insulating layer has a hardness of 10 ° H or more.
Preferably, the temperature is set to 80 ° H. At least a part of each of the conductive wires is inclined or bent in a direction intersecting the thickness direction of the elastic insulating layer so as to reduce the load. Also,
Each of the plating terminals, a first plating layer connected to one end of each of the conductive wires and located on the back side of the elastic insulating layer, and a second plating layer covering the first plating layer , And it is preferable that a part of each of the pad terminals is made about 25% or more of its thickness.
【0011】ここで、特許請求の範囲における第一、第
二の電気的接合物としては、検査基板、高密度フレキシ
ブル基板、ビルドアップ配線板、BGA、LGA、FB
GA、PBGA等からなる表面実装型半導体パッケー
ジ、又は表面実装型の電気電子部品等があげられる。導
電線条としては、金、金合金、プラチナ、銅、アルミニ
ウム、アルミニウム−ケイ素合金、真鍮、リン青銅、ベ
リリウム銅、ニッケル、タングステン、ステンレス等か
らなるワイヤ、これらに金や金合金、ニッケル等のめっ
き加工を施したワイヤ等があげられる。Here, the first and second electrical joints in the claims include an inspection board, a high-density flexible board, a build-up wiring board, BGA, LGA, FB
Examples include a surface-mount type semiconductor package made of GA, PBGA, or the like, or a surface-mount type electric / electronic component. As the conductive wire, gold, gold alloy, platinum, copper, aluminum, aluminum-silicon alloy, brass, phosphor bronze, beryllium copper, nickel, tungsten, stainless steel, etc., such as gold, gold alloy, nickel, etc. Examples include a plated wire.
【0012】導電線条を設ける方法としては、ウェッジ
ボンディング法、金属ボンディング法、超音波ワイヤボ
ンディング法、又はパッド端子を構成する金属板に孔を
開けて挿着する方法等がある。この中でも、精度とスピ
ードに優れる超音波ワイヤボンディング法が望ましい。
金属板は、特に限定されるものではないが、銅、銅合
金、又は鉄ニッケル合金等を使用することができる。特
に、加工性(ボンディング性、弾性絶縁層の形成時の低
歪み性やエッチング性)、コスト、電気的特性、及び熱
膨張の観点から鉄ニッケル合金が好ましい。さらに、め
っき端子の略半球形には、半球形、半楕球形、又はこれ
らに類似した形が含まれる。As a method of providing the conductive wire, there are a wedge bonding method, a metal bonding method, an ultrasonic wire bonding method, a method of making a hole in a metal plate constituting a pad terminal and inserting the same. Among these, an ultrasonic wire bonding method which is excellent in accuracy and speed is desirable.
The metal plate is not particularly limited, but copper, a copper alloy, an iron-nickel alloy, or the like can be used. In particular, an iron-nickel alloy is preferable from the viewpoints of workability (bonding property, low distortion property and etching property at the time of forming the elastic insulating layer), cost, electrical characteristics, and thermal expansion. Further, the substantially hemispherical shape of the plating terminal includes a hemispherical shape, a semi-elliptical shape, or a similar shape.
【0013】請求項1記載の発明によれば、めっき端子
とパッド端子とをそれぞれ大型化したので、電気的接合
物の端子やパッドの位置精度により、各端子の接続抵抗
がばらつくことがなく、繰り返し圧縮した場合にも、弾
性絶縁層に端子が埋没することがない。また、弾性絶縁
層からめっき端子とパッド端子をそれぞれ大きく突出す
るので、接触抵抗の低い安定した接続を実現することが
できる。また、所定値以上圧縮した場合でも、電気的接
合物と弾性絶縁層との間に隙間が生まれ、変形分の弾性
絶縁層の体積をその部分に逃がすことが可能になる。し
たがって、変形しても、弾性絶縁層が比較的容易に変形
し、荷重を小さくすることができる。According to the first aspect of the present invention, since the size of the plated terminal and the size of the pad terminal are increased, the connection resistance of each terminal does not vary due to the positional accuracy of the terminal of the electrical joint and the pad. Even when compressed repeatedly, the terminal is not buried in the elastic insulating layer. Further, since the plated terminal and the pad terminal protrude greatly from the elastic insulating layer, stable connection with low contact resistance can be realized. Further, even when the compression is performed by a predetermined value or more, a gap is created between the electric joint and the elastic insulating layer, and the volume of the elastic insulating layer corresponding to the deformation can be released to that portion. Therefore, even if it is deformed, the elastic insulating layer is relatively easily deformed, and the load can be reduced.
【0014】請求項2記載の発明によれば、弾性絶縁層
の硬度が80°Hを超えることがないので、圧縮時の荷
重が必要以上に大きくなることがない。また、硬度が1
0°H未満ではないので、圧縮永久歪みの増加を抑制あ
るいは防止することができる。さらに、接合や接続時に
おける導電線条の屈曲を抑制あるいは防止し、荷重を低
減することができる。According to the second aspect of the present invention, since the hardness of the elastic insulating layer does not exceed 80 ° H, the load at the time of compression does not become unnecessarily large. The hardness is 1
Since it is not less than 0 ° H, an increase in compression set can be suppressed or prevented. Furthermore, the bending of the conductive wire during joining or connection can be suppressed or prevented, and the load can be reduced.
【0015】[0015]
【発明の実施の形態】以下、図面を参照して本発明の好
ましい実施形態を説明するが、本発明は以下の実施形態
になんら限定されるものではない。本実施形態における
電気コネクタは、図1や図2等に示すように、検査基板
14とBGA16の間に介在されるフレーム8と、この
フレーム8内に成形して嵌着される弾性絶縁性のエラス
トマー層9と、このエラストマー層9の上下厚さ方向に
埋設され、一定ピッチで相互に離隔する複数のワイヤ7
と、各ワイヤ7の下端部に接続されてエラストマー層9
の裏面に露出し、検査基板14の複数の電極15にそれ
ぞれ接触する接触面積拡大用の複数のめっき端子12
と、各ワイヤ7の上端部に接続されてBGA16の複数
の半田ボール17にそれぞれ接触する接触面積拡大用の
複数のパッド端子13とを備えている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to the following embodiments. As shown in FIGS. 1 and 2 and the like, the electric connector according to the present embodiment includes a frame 8 interposed between the inspection board 14 and the BGA 16 and an elastic insulating material formed and fitted into the frame 8. An elastomer layer 9 and a plurality of wires 7 embedded in the thickness direction of the elastomer layer 9 and separated from each other at a constant pitch.
And an elastomer layer 9 connected to the lower end of each wire 7.
And a plurality of plating terminals 12 for contact area enlargement, which are exposed on the back surface of the
And a plurality of pad terminals 13 connected to the upper end of each wire 7 for increasing the contact area to be in contact with the plurality of solder balls 17 of the BGA 16, respectively.
【0016】フレーム8は、図1に示すように、汎用の
エンジニアリングプラスチック材、セラミック材、ある
いは金属材料を使用して枠形に成形されている。エンジ
ニアリングプラスチック材としては、寸法安定性や耐熱
性等に優れるポリエーテルイミド(PEI)、ポリフェニ
レンサルファイド(PPS)、又はポリエーテルスルホン
(PES)等の材料があげられる。As shown in FIG. 1, the frame 8 is formed into a frame shape using a general-purpose engineering plastic material, ceramic material, or metal material. Engineering plastic materials include polyetherimide (PEI), polyphenylene sulfide (PPS), or polyether sulfone, which have excellent dimensional stability and heat resistance.
(PES) and the like.
【0017】エラストマー層9は、硬化前に流動性を有
し、硬化して架橋構造を形成する各種のエラストマーを
用いて断面板形・平面矩形に成形されている。エラスト
マーとしては、例えば、シリコーン系ゴム、フッ素ゴ
ム、ポリブタジエンゴム、ポリイソプレンゴム、ポリウ
レタンゴム、クロロプレンゴム、ポリエステル系ゴム、
スチレン−ブタジエン共重合体ゴム、天然ゴム、又はこ
れらの独立及び連泡の発泡材料等を使用することができ
る。この中でも、硬化後の電気絶縁性、耐熱性、圧縮永
久歪み特性に優れているシリコーンゴム、特にワイヤ7
の配列を崩さずに材料を注入可能なこと、短時間でレベ
リング可能なこと等から硬化前の性状が液状で低粘度の
ものが適切である。シリコーンゴムの場合、粘度が10
00ポイズ以下、好ましくは200ポイズ以下、通常は
5ポイズ以上のものが良い。エラストマー層9の硬度
は、10°H〜80°H、より好ましくは20°H〜5
0°Hが良い。The elastomer layer 9 is formed into a plate shape and rectangular shape in cross section using various elastomers which have fluidity before curing and cure to form a crosslinked structure. As the elastomer, for example, silicone rubber, fluorine rubber, polybutadiene rubber, polyisoprene rubber, polyurethane rubber, chloroprene rubber, polyester rubber,
Styrene-butadiene copolymer rubber, natural rubber, or independent and open-cell foamed materials thereof can be used. Among them, silicone rubber having excellent electrical insulation properties, heat resistance and compression set characteristics after curing, especially wires 7
Since the material can be injected without disturbing the arrangement and the leveling can be performed in a short time, it is appropriate that the material before curing has a liquid state and a low viscosity. In the case of silicone rubber, the viscosity is 10
Those having a poise of not more than 00 poise, preferably not more than 200 poise, usually not less than 5 poise are good. The hardness of the elastomer layer 9 is 10 ° H to 80 ° H, more preferably 20 ° H to 5 ° C.
0 ° H is good.
【0018】各ワイヤ7は、ワイヤボンディングによる
接合方法に適し、導電性に優れる金ワイヤからなる。各
ワイヤ7の線径については、特に制限はないが、接続時
の荷重を可能な限り小さくし、接続の安定性に悪影響を
与えない範囲で細いことが好ましい。具体的には、通常
のワイヤボンティングで使用されている100μm以
下、特に20〜80μmのワイヤ7が使用される。各ワ
イヤ7は、図1や図2に示すように45°傾斜した略ク
ランク形に形成される。Each wire 7 is made of a gold wire which is suitable for a bonding method by wire bonding and has excellent conductivity. The wire diameter of each wire 7 is not particularly limited, but it is preferable that the load at the time of connection be as small as possible and that the wire 7 be as thin as possible without adversely affecting the stability of the connection. Specifically, a wire 7 of 100 μm or less, particularly 20 to 80 μm, which is used in ordinary wire bonding, is used. Each wire 7 is formed in a substantially crank shape inclined at 45 degrees as shown in FIGS.
【0019】但し、各ワイヤ7の形状は、略クランク形
に限定されるものではなく、上下厚さ方向に対して傾斜
した直線棒形、く字形、略N字形、横S字形、U字形、
又は横Ω字形等に適宜形成される。略N字形等の直線部
が存在する場合には、電気コネクタの厚さが0.5〜2
mmと薄く、検査や接続の圧縮に関してエラストマー層
9の弾性特性を利用することから、直線部の長さが0.
2〜0.5mm、好ましくは0.2〜0.3mmが良
い。However, the shape of each wire 7 is not limited to a substantially crank shape, but may be a straight rod shape, a rectangular shape, a substantially N shape, a horizontal S shape, a U shape, a straight bar shape inclined with respect to the vertical thickness direction.
Alternatively, it is appropriately formed in a lateral Ω shape or the like. If there is a linear portion such as a substantially N-shape, the thickness of the electrical connector is 0.5 to 2
mm, and utilizes the elastic properties of the elastomer layer 9 with respect to the inspection and compression of the connection, so that the length of the linear portion is 0.
2 to 0.5 mm, preferably 0.2 to 0.3 mm.
【0020】各めっき端子12は、図1、図2、及び図
13に示すように、各ワイヤ7の接点7aに接続されて
エラストマー層9の裏面側に位置する第一のめっき層1
0と、この第一のめっき層10の表面を被覆する硬質の
第二のめっき層11とから半球形に湾曲形成されてい
る。第一のめっき層10は、エラストマー層9からワイ
ヤ7の突出量を増加させるよう機能し、金、銀、錫、あ
るいはニッケル等から形成される。但し、めっきの成長
スピードの観点からは、ニッケルめっきが好ましい。第
一のめっき層10は30μm〜100μmの厚さに形成
される。これは、30μmよりも薄いとエラストマー層
9からの突出量が不十分となり、圧縮時にエラストマー
層9に陥没するおそれがあるからである。反対に100
μmを超えると、コスト面から好ましくないからであ
る。As shown in FIGS. 1, 2 and 13, each plating terminal 12 is connected to the contact 7a of each wire 7 and is located on the back side of the elastomer layer 9.
0 and a hard second plating layer 11 that covers the surface of the first plating layer 10 are curvedly formed in a hemispherical shape. The first plating layer 10 functions to increase the amount of protrusion of the wire 7 from the elastomer layer 9 and is formed of gold, silver, tin, nickel, or the like. However, from the viewpoint of plating growth speed, nickel plating is preferred. The first plating layer 10 is formed to a thickness of 30 μm to 100 μm. This is because if the thickness is less than 30 μm, the amount of protrusion from the elastomer layer 9 becomes insufficient, and the elastomer layer 9 may be depressed during compression. On the contrary, 100
If it exceeds μm, it is not preferable from the viewpoint of cost.
【0021】第二のめっき層11は、繰り返し使用され
ることのないBGA16の実装接続の場合には、金めっ
きが使用される。これに対し、BGA16の検査の場
合、接点7aの損傷や摩耗を防止する観点から、厚さが
0.1〜2μm程度の硬質金めっきが使用される。The second plating layer 11 uses gold plating in the case of mounting connection of the BGA 16 which is not used repeatedly. On the other hand, in the case of the inspection of the BGA 16, hard gold plating having a thickness of about 0.1 to 2 μm is used from the viewpoint of preventing the contact 7a from being damaged or worn.
【0022】各パッド端子13は、図1、図2、及び図
15に示すように、平坦な基板5と、この基板5の表裏
両面にそれぞれ被覆形成されるめっき4とから構成さ
れ、厚さ25%以上の下部がエラストマー層9に埋没
し、残部の上部がエラストマー層9の表面から突出す
る。各パッド端子13の形や径は、BGA16の場合に
は半田ボール17が一般的にφ0.3〜0.75mmで
あること、端子間の絶縁性を確保しながら半田ボール1
7やパッド端子13の位置精度を考慮する必要のあるこ
とから、円形、小判形、四角形、多角形、又は楕円形に
適宜形成される。円形の場合、φ0.3〜0.8mmの
範囲が望ましい。これに対し、LGA等のランド形を呈
した電極の場合、接触圧を集中させ、接触抵抗を安定さ
せる観点から、ランド形を呈した電極に接触する面(上
面)の径がφ0.05〜0.25mm、下面の径がφ
0.3〜0.8mmの断面略台形が適切である(図18
参照)。As shown in FIGS. 1, 2 and 15, each pad terminal 13 is composed of a flat substrate 5 and platings 4 formed on the front and rear surfaces of the substrate 5, respectively. At least 25% of the lower part is buried in the elastomer layer 9, and the remaining upper part protrudes from the surface of the elastomer layer 9. The shape and diameter of each pad terminal 13 is such that the solder ball 17 is generally φ0.3 to 0.75 mm in the case of the BGA 16, and the solder ball 1 is formed while ensuring insulation between the terminals.
Since it is necessary to take into account the positional accuracy of the pad 7 and the pad terminal 13, it is appropriately formed in a circular, oval, square, polygonal, or elliptical shape. In the case of a circular shape, a range of φ0.3 to 0.8 mm is desirable. On the other hand, in the case of a land-shaped electrode such as LGA, from the viewpoint of concentrating the contact pressure and stabilizing the contact resistance, the diameter of the surface (upper surface) contacting the land-shaped electrode has a diameter of φ0.05 to 0.25mm, bottom diameter is φ
A substantially trapezoidal cross section of 0.3 to 0.8 mm is appropriate (FIG. 18).
reference).
【0023】なお、パッド端子13の埋没量は金属板1
のエッチング量により決定される。パッド端子13の厚
さ25%以上の下部がエラストマー層9に埋没されるの
は、24%以下では金属板1の残存部分が多く、最終エ
ッチングにおいてサイドエッチングが大きくなり、パッ
ト端子13の形や径が安定しないからである。The pad terminal 13 is buried in the metal plate 1.
Is determined by the etching amount. The reason why the lower portion of the pad terminal 13 having a thickness of 25% or more is buried in the elastomer layer 9 is that when the thickness is 24% or less, the remaining portion of the metal plate 1 is large and the side etching becomes large in the final etching. This is because the diameter is not stable.
【0024】基板5は、厚さ0.05〜0.5mmの鉄
ニッケル合金、すなわち金属板1からなり、表裏両面が
それぞれ鏡面加工されて半田屑の発生を抑制するよう機
能する。基板5は、0.1mm以下ではエラストマー層
9からの突出量が小さく、圧縮使用時にエラストマー層
9がBGA16と接触して荷重が増大する。逆に0.2
5mm以上では最終のエッチングにおいてサイドエッチ
ングが大きくなり、シャープなエッジが得にくい。ま
た、エッチング時間が長くなり、コストアップを招くこ
ととなる。したがって、基板5の厚さは、0.1〜0.
25mmが最適である。The substrate 5 is made of an iron-nickel alloy having a thickness of 0.05 to 0.5 mm, that is, a metal plate 1. Both the front and back surfaces are mirror-finished and function to suppress the generation of solder dust. When the thickness of the substrate 5 is 0.1 mm or less, the amount of protrusion from the elastomer layer 9 is small, and the load increases due to the contact of the elastomer layer 9 with the BGA 16 during compression use. Conversely 0.2
If it is 5 mm or more, the side etching becomes large in the final etching, and it is difficult to obtain a sharp edge. Further, the etching time becomes longer, which leads to an increase in cost. Therefore, the thickness of the substrate 5 is 0.1 to 0.
25 mm is optimal.
【0025】各めっき4は、金、銀、パラジウム、パラ
ジウム−ニッケル合金、ニッケル、コバルト、ロジウ
ム、又はルテニウム等を使用した光沢めっきとされ、半
田屑の発生を抑制することができる。この中でもBGA
16の場合には、金めっきを使用すると、端子部の表面
に半田屑が移行、堆積して接続抵抗を増大させるという
問題があるため、金めっきに比べて半田が移行しにくい
パラジウム、コバルト、ロジウム、あるいはニッケルめ
っき等が使用される。さらに、接続抵抗や強度の観点か
らパラジウムめっきが好適である。これに対し、LGA
の場合には、接続抵抗の面から金めっきとされる。Each plating 4 is a bright plating using gold, silver, palladium, palladium-nickel alloy, nickel, cobalt, rhodium, ruthenium, or the like, and can suppress generation of solder dust. Among them, BGA
In the case of No. 16, when using gold plating, there is a problem that solder dust migrates and accumulates on the surface of the terminal portion to increase the connection resistance. Therefore, compared with gold plating, palladium, cobalt, Rhodium or nickel plating is used. Further, palladium plating is preferable from the viewpoint of connection resistance and strength. In contrast, LGA
In the case of, gold plating is used from the viewpoint of connection resistance.
【0026】各めっき4は、接触抵抗や耐摩耗性の観点
から0.1μm以上の厚さが必要となる。特に、パッド
端子形成の最終エッチングにおけるエッチングレジスト
として機能するため、耐エッチング性等の観点から0.
5μm以上必要となる。このように各めっき4は、厚い
程良いが、コストの増大を防止するため、3μm以下と
することが好ましい。したがって、各めっき4は、接触
抵抗、耐摩耗性、耐エッチング性、及びコストを考慮
し、1〜2μmの範囲の厚さに形成される。Each plating 4 needs a thickness of 0.1 μm or more from the viewpoint of contact resistance and wear resistance. In particular, since it functions as an etching resist in the final etching for forming the pad terminals, it is preferable to use a resist of 0.1 from the viewpoint of etching resistance and the like.
5 μm or more is required. Thus, the thickness of each plating 4 is better as it is thicker, but is preferably 3 μm or less in order to prevent an increase in cost. Therefore, each plating 4 is formed to have a thickness in the range of 1 to 2 μm in consideration of contact resistance, abrasion resistance, etching resistance, and cost.
【0027】次に、電気コネクタの製造方法について説
明する。先ず、厚さ0.1〜0.25mmの鉄ニッケル
合金製の金属板1を用意し、この金属板1の最終的にめ
っきしたい部分にエッチングレジスト膜2をフォトレジ
ストプロセスによりそれぞれ形成し(図3参照)、それ以
外の部分を塩化第二鉄溶液で両面から厚さの25〜40
%をそれぞれエッチングし(図4参照)、エッチングによ
る凹み部分(図5参照)に電着フォトレジスト膜3を形成
する。続いて、エッチングレジスト膜2を水酸化ナトリ
ウム溶液で剥離し(図6参照)、その部分にめっき4をそ
れぞれ施し(図7参照)、電着フォトレジスト膜3を乳酸
を含有した腐食性液で剥離してボンディング用の基板5
を作製する(図8参照)。Next, a method of manufacturing the electrical connector will be described. First, a metal plate 1 made of an iron-nickel alloy having a thickness of 0.1 to 0.25 mm is prepared, and an etching resist film 2 is formed on a portion of the metal plate 1 to be finally plated by a photoresist process (FIG. 3), and the other part was coated with a ferric chloride solution to a thickness of 25 to 40 from both sides.
% Is etched (see FIG. 4), and an electrodeposited photoresist film 3 is formed in the recessed portion (see FIG. 5) by the etching. Subsequently, the etching resist film 2 is peeled off with a sodium hydroxide solution (see FIG. 6), plating is applied to the portions thereof (see FIG. 7), and the electrodeposited photoresist film 3 is coated with a corrosive liquid containing lactic acid. Peeling and bonding substrate 5
(See FIG. 8).
【0028】エッチング量を25〜40%としたのは、
25%未満では金属板1の残存部分が多く、最終エッチ
ングにおいてサイドエッチングが大きくなったり、エッ
チング後における端子部の径のばらつきが大きくなるお
それがある。また、エラストマー層9への埋没が不十分
で、十分な接着面積が確保できず、エラストマー層9か
らの剥離が生じやすい。逆に、40%を超えると、金属
板1の残存部分が少なくなり、強度が不十分であった
り、貫通孔が発生してしまうおそれがあるからである。The reason why the etching amount is 25 to 40% is as follows.
If it is less than 25%, the remaining portion of the metal plate 1 is large, so that the side etching may be large in the final etching or the variation in the diameter of the terminal portion after the etching may be large. In addition, the rubber layer 9 is not sufficiently buried in the elastomer layer 9 and a sufficient bonding area cannot be secured. On the other hand, if it exceeds 40%, the remaining portion of the metal plate 1 is reduced, and the strength may be insufficient or a through hole may be generated.
【0029】同様に片面からのエッチングの場合は、図
19に示すように、厚さ0.1〜0.25mmの鉄ニッ
ケル合金の金属板1の最終的にめっきしたい部分にエッ
チングレジスト膜2をフォトレジストプロセスにより形
成し、一方の面全体を保護フィルム6でラミネートし、
塩化第二鉄溶液で他方の面から厚さの25〜60%エッ
チングする(図20参照)。続いて保護フィルム6を剥離
し、図21に示すようにエッチングによる凹み部分及び
裏面の非エッチングレジスト膜部分にフォトレジスト膜
3を形成する。そして、エッチングレジスト膜2を水酸
化ナトリウム溶液で剥離し(図22参照)、その部分にめ
っき4をそれぞれ施し(図23参照)、その後、電着フォ
トレジスト膜3を乳酸を含有した腐食溶液で剥離してボ
ンディング用の基板5を作製する(図24参照)。Similarly, in the case of etching from one side, as shown in FIG. 19, an etching resist film 2 is formed on a portion of the iron-nickel alloy metal plate 1 having a thickness of 0.1 to 0.25 mm to be finally plated. Formed by a photoresist process, one surface of which is entirely laminated with a protective film 6,
Etching is performed on the other surface with a ferric chloride solution at 25 to 60% of the thickness (see FIG. 20). Subsequently, the protective film 6 is peeled off, and a photoresist film 3 is formed on the concave portion by etching and the non-etched resist film portion on the back surface as shown in FIG. Then, the etching resist film 2 is peeled off with a sodium hydroxide solution (see FIG. 22), and the plating 4 is applied to the portions (see FIG. 23). Thereafter, the electrodeposited photoresist film 3 is coated with a corrosive solution containing lactic acid. By peeling off, a substrate 5 for bonding is produced (see FIG. 24).
【0030】エッチング量を25〜60%としたのは、
25%未満では金属板1の残存部分が多く、最終エッチ
ングにおいてサイドエッチングが大きくなったり、エッ
チング後における端子部の径のばらつきが大きくなるお
それがある。また、エラストマー層9への埋没が不十分
で、十分な接着面積が確保できず、エラストマー層9か
らの剥離が生じやすい。逆に、60%を超えると、エラ
ストマー層9からの端子部の突出量が小さく、圧縮使用
時にエラストマー層9がBGA16と接触して荷重が増
大するからである。また、金属板1の残存部分が少なく
なり、強度が不十分であったり、貫通孔が発生してしま
うおそれがある。The reason why the etching amount is 25 to 60% is as follows.
If it is less than 25%, the remaining portion of the metal plate 1 is large, so that the side etching may be large in the final etching or the variation in the diameter of the terminal portion after the etching may be large. In addition, the rubber layer 9 is not sufficiently buried in the elastomer layer 9 and a sufficient bonding area cannot be secured. Conversely, if it exceeds 60%, the amount of protrusion of the terminal portion from the elastomer layer 9 is small, and the load increases due to the contact of the elastomer layer 9 with the BGA 16 during compression use. In addition, the remaining portion of the metal plate 1 is reduced, and the strength may be insufficient or a through hole may be generated.
【0031】次いで、ボンディング用の基板5に複数の
ワイヤ7をワイヤボンダによりボンディングし(図9参
照)、各ワイヤ7の上端部にレーザを照射してボール状
の接点7aを形成する(図10参照)。接点7aを形成し
たら、ボンディング用の基板5の外周縁に沿ってフレー
ム8を配置し、このフレーム8内に注型ゴムを充填して
エラストマー層9を成形するとともに、このエラストマ
ー層9に複数の接点7aを覆わせ、ボンディング用の基
板5、複数のワイヤ7、フレーム8、及びエラストマー
層9を一体的に接着する(図11参照)。Next, a plurality of wires 7 are bonded to the bonding substrate 5 by a wire bonder (see FIG. 9), and a laser is applied to the upper end of each wire 7 to form a ball-shaped contact 7a (see FIG. 10). ). After the contacts 7a are formed, a frame 8 is arranged along the outer peripheral edge of the bonding substrate 5, and a casting rubber is filled in the frame 8 to form an elastomer layer 9; The contact 7a is covered, and the bonding substrate 5, the plurality of wires 7, the frame 8, and the elastomer layer 9 are integrally bonded (see FIG. 11).
【0032】次いで、YAGレーザ等の周知のレーザを
照射してエラストマー層9から各接点7aを0.03〜
0.1mm露出させ(図12参照)、各接点7aの表面に
第一のめっき層10を30〜100μm施し、この第一
のめっき層10の表面に第二のめっき層11を0.1〜
2μm施してめっき端子12を形成する(図13参
照)。こうしてめっき端子12を形成したら、ボンディ
ング用の基板5を上下逆に反転してその非めっき部をエ
ッチング処理により除去し、複数のパッド端子13を形
成する(図14参照)。そしてその後、サイドエッチン
グにより生じためっき4の残りに対して水圧10〜30
kgf/cm2の条件で水を噴霧し、めっき4の残りを
除去する(図15参照)。Next, a known laser such as a YAG laser is radiated to make each contact 7a from the elastomer layer 9 0.03 to 0.03.
0.1 mm is exposed (see FIG. 12), the first plating layer 10 is applied to the surface of each contact 7a by 30 to 100 μm, and the second plating layer 11 is applied to the surface of the first plating layer 10 by 0.1 to 100 μm.
The plating terminal 12 is formed by applying 2 μm (see FIG. 13). After the plated terminals 12 are formed, the bonding substrate 5 is turned upside down, and the non-plated portions are removed by etching to form a plurality of pad terminals 13 (see FIG. 14). And then, the water pressure of 10 to 30 is applied to the rest of the plating 4 generated by the side etching.
Water is sprayed under the condition of kgf / cm 2 to remove the remainder of the plating 4 (see FIG. 15).
【0033】水圧10〜30kgf/cm2の条件とし
たのは、10kgf/cm2未満では除去することがで
きないからである。逆に、30kgf/cm2を超える
と、エラストマー層9からパッド端子13が剥離するお
それがあるからである。以上の方法により、本実施形態
の電気コネクタを製造することができる(図16参照)。
その他の部分については従来例と同様である。[0033] was the condition of the water pressure 10~30kgf / cm 2 is not possible to remove less than 10 kgf / cm 2. Conversely, if it exceeds 30 kgf / cm 2 , the pad terminals 13 may peel off from the elastomer layer 9. With the above method, the electrical connector of the present embodiment can be manufactured (see FIG. 16).
Other parts are the same as in the conventional example.
【0034】上記構成によれば、ワイヤ7に大型のパッ
ド端子13を設けてパッド22を実質的に拡大するの
で、BGA16の半田ボール17やパッド22の位置精
度により、各端子の接続抵抗がばらつくという問題を確
実に解消することができる。また、エラストマー層9か
らめっき端子12とパッド端子13をそれぞれ大きく突
出させているので、端子に応力を集中させ、接触抵抗の
低い安定した接続を実現することができる。また、0.
15mm以上圧縮した場合でも、検査基板14とエラス
トマー層9との間に十分な空隙が生まれ、圧縮分のエラ
ストマー層9の体積をその部分に逃がすことが可能にな
る。したがって、圧縮しても、エラストマー層9が容易
に変形し、荷重をきわめて小さく抑制することができ
る。According to the above configuration, since the pad 22 is substantially enlarged by providing the large pad terminal 13 on the wire 7, the connection resistance of each terminal varies due to the positional accuracy of the solder ball 17 of the BGA 16 and the pad 22. Problem can be surely solved. In addition, since the plated terminal 12 and the pad terminal 13 are greatly protruded from the elastomer layer 9, stress can be concentrated on the terminal, and stable connection with low contact resistance can be realized. Also, 0.
Even when the compression is performed by 15 mm or more, a sufficient gap is created between the test substrate 14 and the elastomer layer 9, and the volume of the elastomer layer 9 corresponding to the compression can be released to the portion. Therefore, even if compressed, the elastomer layer 9 is easily deformed, and the load can be suppressed to a very small value.
【0035】また、LGAに対しても、LGAとエラス
トマー層9の間、及び検査基板14とエラストマー層9
の間に十分な空隙が生まれ、圧縮分のエラストマー層9
の体積をその部分に逃がすことができる。よって、0.
15mm以上圧縮した場合でも、エラストマー層9が容
易に変形し、荷重の著しい抑制が期待できる。また、め
っき端子12とパッド端子13とをそれぞれ大型化した
ので、繰り返し圧縮した場合にも、エラストマー層9に
端子が埋没することがない。さらに、パッド端子13の
厚さ25%以上をエラストマー層9に埋没させるので、
エラストマー層9から剥がれることがない。さらにま
た、BGA16の検査の場合、めっき端子12の表面を
硬質金めっきとするので、めっき端子12の摩耗防止が
期待できる。For the LGA, between the LGA and the elastomer layer 9 and between the test substrate 14 and the elastomer layer 9
Between the elastomer layer 9 and the compressed elastomer layer 9
Can be released to that part. Therefore, 0.
Even when compressed by 15 mm or more, the elastomer layer 9 is easily deformed, and remarkable suppression of the load can be expected. In addition, since the plating terminal 12 and the pad terminal 13 are each made larger, the terminal does not become buried in the elastomer layer 9 even when repeatedly compressed. Further, since 25% or more of the thickness of the pad terminal 13 is buried in the elastomer layer 9,
It does not peel off from the elastomer layer 9. Furthermore, in the case of the inspection of the BGA 16, since the surface of the plated terminal 12 is made of hard gold plating, the wear of the plated terminal 12 can be expected to be prevented.
【0036】本実施形態の電気コネクタと従来の電気コ
ネクタの特性、具体的には圧縮時の接続抵抗、圧縮時の
荷重、繰り返し使用回数を比較したところ、表1に示す
結果を得ることができた。When the characteristics of the electric connector of the present embodiment and the conventional electric connector, specifically, the connection resistance at the time of compression, the load at the time of compression, and the number of times of repeated use are compared, the results shown in Table 1 can be obtained. Was.
【0037】[0037]
【表1】 [Table 1]
【0038】[0038]
【実施例】実施例1 以下、BGA16の検査用の電気コネクタの実施例を示
す。厚さ0.15mm、縦35mm、横35mmの鉄ニ
ッケル合金(ニッケル41%)製の金属板1の中心部分に
おける表裏両面に、φ0.7mm、ピッチ1.27mm
で縦横それぞれ20列(総数400)のマトリクス状に厚
さ7μmのカゼインレジスト層(エッチングレジスト膜
2)を公知のフォトレジストにより形成し、塩化第二鉄
溶液で表裏より各0.05mmの深さでエッチングし、
エッチングによる凹み部分に厚さ約7μmのアクリル系
樹脂からなる電着フォトレジスト膜3を形成した。続い
て、カゼインレジスト層を5%水酸化ナトリウム溶液に
より剥離し、その部分の一方の面(その後ボンディング
される面)に1μmの下地ニッケルめっきを施すととも
に、金のめっき4を0.2μm施し、裏側の半田ボール
17の接触する面には2μmの下地ニッケルめっきを施
した後、パラジウムのめっき4を2μm施した。そし
て、電着フォトレジスト膜3を乳酸を含んだ腐食溶液に
より剥離したものをボンティング用の基板5とした(図
3〜図8参照)。Embodiment 1 Hereinafter, an embodiment of an electrical connector for testing a BGA 16 will be described. Φ0.7 mm, pitch 1.27 mm on both front and back surfaces at the center of a metal plate 1 made of an iron-nickel alloy (nickel 41%) having a thickness of 0.15 mm, a length of 35 mm, and a width of 35 mm
Then, a casein resist layer (etching resist film 2) having a thickness of 7 μm is formed in a matrix of 20 rows and columns (total number of 400) using a known photoresist, and a depth of 0.05 mm each from the front and back with a ferric chloride solution. Etching with
An electrodeposited photoresist film 3 of an acrylic resin having a thickness of about 7 μm was formed in the recessed portion by the etching. Subsequently, the casein resist layer was peeled off with a 5% sodium hydroxide solution, and one side of the portion (the surface to be subsequently bonded) was plated with nickel under a thickness of 1 μm and plated with gold 4 at a thickness of 0.2 μm. A 2 μm underlying nickel plating was applied to the contact surface of the back side solder ball 17, and then a 2 μm palladium plating 4 was applied. The electrodeposited photoresist film 3 was peeled off with a corrosion solution containing lactic acid to obtain a bonding substrate 5 (see FIGS. 3 to 8).
【0039】次いで、めっき面におけるめっき部分の中
心に汎用のボールボンダを用いて直径50μmの金のワ
イヤ7をピッチ1.27mmで縦横それぞれ20列(総
数400)のマトリクス状にボンディングした。このと
きのワイヤ7は図9に示すように、垂直に約0.3m
m、角度45°で0.6mmオフセットし、さらに垂直
方向に伸ばした構造とした。各ワイヤ7を整えたら、各
ワイヤ7の上端部にアルゴンレーザ光を照射して上端部
に直径100μmの球状の接点7aを形成し、その高さ
が1.2mmで均一になるように揃えた(図10参照)。
そして、基板5上の外周縁に沿って縦横それぞれ35m
m、高さ1.3mm、幅5mmでポリエーテルイミド
(以下、PEIという)製の成形用のフレーム8を配置し
た。Next, using a general-purpose ball bonder, gold wires 7 having a diameter of 50 μm were bonded at a pitch of 1.27 mm in a matrix of 20 rows each in a vertical direction and a horizontal direction (a total of 400) using a general-purpose ball bonder. At this time, as shown in FIG.
m, offset by 0.6 mm at an angle of 45 °, and further extended vertically. After each wire 7 was prepared, the upper end of each wire 7 was irradiated with argon laser light to form a spherical contact 7a having a diameter of 100 μm on the upper end, and the height was uniformed to be 1.2 mm. (See FIG. 10).
Then, along the outer peripheral edge on the substrate 5, 35 m each in the vertical and horizontal directions
m, height 1.3mm, width 5mm, polyetherimide
A molding frame 8 (hereinafter, referred to as PEI) was disposed.
【0040】次いで、フレーム8内に、硬化後のゴム硬
度が25°H(JIS A)になる2液製のシリコーンゴ
ムKE1216A/B〔信越化学工業(株)製、商品名〕
各50重量部に対し、着色剤K−Color−BK−0
2B〔信越化学工業(株)製、商品名〕を10重量部添加
して混合したものを、ワイヤ7の接点7aの上端より
0.1mm高くなる量を注入し、120℃で30分間加
熱処理して硬化させた(図11参照)。Next, in the frame 8, a two-part silicone rubber KE1216A / B (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) having a cured rubber hardness of 25 ° H (JIS A) is obtained.
Colorant K-Color-BK-0 was added to each 50 parts by weight.
10 parts by weight of 2B (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) was added and mixed in an amount of 0.1 mm higher than the upper end of the contact 7a of the wire 7 and heat-treated at 120 ° C. for 30 minutes. And cured (see FIG. 11).
【0041】次いで、YAGレーザ光をスキャニング照
射してワイヤ7の接点7aを被覆しているエラストマー
層9をワイヤ7の接点7aがエラストマー層9の表面か
ら50μm突出するまで除去し(図12参照)、基板5を
パッド端子13として電解めっき4で露出させたワイヤ
7の接点7aに75μmのニッケルめっき(第一のめっ
き層10)を施し、さらにその上に硬質金めっき(第二の
めっき層11)を2μm施した(図13参照)。硬質金め
っきを施したら、基板5を塩化第二鉄溶液でエッチング
処理し、φ0.7mmのめっき部分を円柱形に残して除
去し、パッド端子13を形成した(図14参照)。そして
その後、サイドエッチングにより生じためっき4の残り
に水圧20kgf/cm2で水を噴霧し、めっき4の残
りを除去し(図15参照)、十分洗浄した後、200℃で
1時間のアフターキュア処理を行い、電気コネクタを得
た(図16参照)。Then, the elastomer layer 9 covering the contact 7a of the wire 7 is removed by scanning irradiation with a YAG laser beam until the contact 7a of the wire 7 projects 50 μm from the surface of the elastomer layer 9 (see FIG. 12). Then, the contact 7a of the wire 7 exposed by the electrolytic plating 4 using the substrate 5 as the pad terminal 13 is plated with nickel of 75 μm (first plating layer 10), and hard gold plating (second plating layer 11 ) Was applied 2 μm (see FIG. 13). After the hard gold plating, the substrate 5 was etched with a ferric chloride solution, and the plated portion having a diameter of 0.7 mm was removed leaving a cylindrical shape, thereby forming a pad terminal 13 (see FIG. 14). Then, water is sprayed at a water pressure of 20 kgf / cm 2 on the remainder of the plating 4 generated by the side etching to remove the remainder of the plating 4 (see FIG. 15). After sufficient washing, after-curing is performed at 200 ° C. for 1 hour. The process was performed to obtain an electrical connector (see FIG. 16).
【0042】この電気コネクタをφ0.75mm、高さ
0.6mmの半田ボール17を1.27mmピッチで縦
横それぞれ20列のマトリクス状に有するBGA16と
検査基板14間で0.2mm圧縮したところ、安定した
導通性が得られ、各電極のばらつきが15〜25mΩと
小さく、BGA16の電気的特性を試験する上で全く問
題がなかった。さらに、0.2mmの圧縮量で繰り返し
圧縮を行い、電気的接続を継続的に確認したところ、5
万回を超えても、抵抗が100mΩを超えるポイントが
発生しなかった。When this electrical connector was compressed by 0.2 mm between the BGA 16 having the solder balls 17 having a diameter of 0.75 mm and the height of 0.6 mm in a matrix of 20 rows each in the vertical and horizontal directions at a pitch of 1.27 mm and the test board 14, it was stable. And the variation of each electrode was as small as 15 to 25 mΩ, and there was no problem in testing the electrical characteristics of the BGA 16. Furthermore, compression was repeatedly performed with a compression amount of 0.2 mm, and the electrical connection was continuously confirmed.
Even if the number of times exceeded 10,000, no point where the resistance exceeded 100 mΩ was generated.
【0043】実施例2 以下、LGAの検査用の電気コネクタの実施例を示す。
厚さ0.15mm、縦50mm、横50mmの鉄ニッケ
ル合金(ニッケル41%)製の金属板1の中心部分におけ
る表面にφ0.5mm、裏面にφ0.2mm、ピッチ1
mmで縦横それぞれ40列(総数1600)のマトリクス
状に厚さ7μmのカゼインレジスト層(エッチングレジ
スト膜2)を公知のフォトレジストにより形成し、塩化
第二鉄溶液で表裏より各0.05mmの深さでエッチン
グし、エッチングによる凹み部分に厚さ約7μmのアク
リル系樹脂からなる電着フォトレジスト膜3を形成し
た。Embodiment 2 Hereinafter, an embodiment of an LGA inspection electrical connector will be described.
0.15 mm in thickness, 50 mm in height, 50 mm in width, 0.5 mm on the front surface, 0.2 mm on the back surface, pitch 1
A 7 μm-thick casein resist layer (etching resist film 2) is formed in a matrix of 40 mm in length and width (total number: 1600) by a known photoresist, and a depth of 0.05 mm each from the front and back with a ferric chloride solution. Then, an electrodeposited photoresist film 3 made of an acrylic resin having a thickness of about 7 μm was formed in the recessed portion formed by the etching.
【0044】続いて、カゼインレジスト層を5%水酸化
ナトリウム溶液により剥離し、その部分の一方の面(そ
の後ボンディングされる面)に1μmの下地ニッケルめ
っきを施すとともに、金のめっき4を0.2μm施し、
裏側のLGAの電極15の接触する面には2μmの下地
ニッケルめっきを施した後、硬質の金のめっき4を2μ
m施した。そして、電着フォトレジスト膜3を乳酸を含
んだ腐食溶液により剥離したものをボンティング用の基
板5とした(図17参照)。Subsequently, the casein resist layer was peeled off with a 5% sodium hydroxide solution, and one surface of the portion (the surface to be subsequently bonded) was plated with nickel under a thickness of 1 μm, and gold plating 4 was applied to a thickness of 0.1 mm. 2 μm,
A 2 μm underlying nickel plating is applied to the surface of the backside LGA contacting the electrode 15, and then a hard gold plating 4 is applied to the 2 μm plating.
m. Then, the electrodeposited photoresist film 3 was peeled off with a corrosion solution containing lactic acid to obtain a bonding substrate 5 (see FIG. 17).
【0045】次いで、めっき面におけるめっき部分の中
心に汎用のボールボンダを用いて直径50μmの金のワ
イヤ7をピッチ1mmで縦横それぞれ40列(総数16
00)のマトリクス状にボンディングした。このときの
ワイヤ7は図9に示すように、垂直に約0.3mm、角
度45°で0.5mmオフセットし、さらに垂直方向に
伸ばした構造とした。各ワイヤ7を整えたら、各ワイヤ
7の上端部にアルゴンレーザ光を照射して上端部に直径
100μmの球状の接点7aを形成し、その高さが1m
mで均一になるように揃えた。そして、基板5上の外周
縁に沿って縦横それぞれ50mm、高さ1.1mm、幅
5mmでPEI製の成形用のフレーム8を配置した。Next, using a general-purpose ball bonder, gold wires 7 having a diameter of 50 μm are arranged at a pitch of 1 mm at 40 mm rows and columns (total 16 rows) at the center of the plating portion on the plating surface.
00). At this time, as shown in FIG. 9, the wire 7 had a structure in which it was vertically offset by about 0.3 mm, at an angle of 45 ° and 0.5 mm, and further extended in the vertical direction. After each wire 7 is prepared, the upper end of each wire 7 is irradiated with argon laser light to form a spherical contact 7a having a diameter of 100 μm on the upper end, and its height is 1 m.
m. Then, a PEI molding frame 8 having a length and width of 50 mm, a height of 1.1 mm, and a width of 5 mm was arranged along the outer peripheral edge of the substrate 5.
【0046】次いで、フレーム8内に、硬化後のゴム硬
度が25°H(JIS A)になる2液製のシリコーンゴ
ムKE1216A/B〔信越化学工業(株)製、商品名〕
各50重量部に対し、着色剤K−Color−BK−0
2B〔信越化学工業(株)製、商品名〕を10重量部添加
して混合したものを、ワイヤ7の接点7aの上端より
0.1mm高くなる量を注入し、120℃で30分間加
熱処理して硬化させた(図11参照)。Next, in the frame 8, a two-part silicone rubber KE1216A / B (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) having a cured rubber hardness of 25 ° H (JIS A) is obtained.
Colorant K-Color-BK-0 was added to each 50 parts by weight.
10 parts by weight of 2B (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) was added and mixed in an amount of 0.1 mm higher than the upper end of the contact 7a of the wire 7 and heat-treated at 120 ° C. for 30 minutes. And cured (see FIG. 11).
【0047】次いで、YAGレーザ光をスキャニング照
射してワイヤ7の接点7aを被覆しているエラストマー
層9をワイヤ7の接点7aがエラストマー層9の表面か
ら50μm突出するまで除去し(図12参照)、基板5を
パッド端子13として電解法で露出させたワイヤ7の接
点7aに75μmのニッケルめっき(第一のめっき層1
0)を施し、さらにその上に硬質金めっき(第二のめっき
層11)を2μm施した(図13参照)。硬質金めっきを
施したら、基板5を塩化第二鉄溶液でエッチング処理
し、トップφ0.2mm、ボトムφ0.5mmのめっき
部分を台形状に残して除去し、パッド端子13を形成し
た(図14参照)。そしてその後、サイドエッチングによ
り生じためっき4の残りに水圧20kgf/cm2で水
を噴霧し、めっき4の残りを除去し(図15参照)、十分
洗浄した後、200℃で1時間のアフターキュア処理を
行い、電気コネクタを得た(図18参照)。Next, the elastomer layer 9 covering the contact 7a of the wire 7 is removed by scanning irradiation with a YAG laser beam until the contact 7a of the wire 7 projects 50 μm from the surface of the elastomer layer 9 (see FIG. 12). The contact 7a of the wire 7 exposed by the electrolytic method using the substrate 5 as the pad terminal 13 is plated with nickel of 75 μm (the first plating layer 1).
0), and hard gold plating (second plating layer 11) was further applied thereon by 2 μm (see FIG. 13). After the hard gold plating, the substrate 5 was etched with a ferric chloride solution, and the plating portions of the top φ0.2 mm and the bottom φ0.5 mm were removed leaving a trapezoidal shape to form the pad terminals 13 (FIG. 14). reference). Then, water is sprayed at a water pressure of 20 kgf / cm 2 on the remainder of the plating 4 generated by the side etching to remove the remainder of the plating 4 (see FIG. 15). After sufficient washing, after-curing is performed at 200 ° C. for 1 hour. The process was performed to obtain an electrical connector (see FIG. 18).
【0048】この電気コネクタを、φ0.5mmの金め
っきのランド電極を1mmピッチで縦横それぞれ40列
のマトリクス状に有するLGAと検査基板14間で0.
15mm圧縮したところ、安定した導通性が得られ、各
電極のばらつきが10〜20mΩと小さく、LGAの電
気的特性を試験する上で全く問題なかった。さらに、
0.15mmの圧縮量で繰り返し圧縮を行い、電気的接
続を継続的に確認したところ、10万回を超えても、抵
抗が100mΩを超えるポイントが発生しなかった。This electrical connector is mounted between an LGA having inspection electrodes 14 and a LGA having gold-plated land electrodes of φ0.5 mm arranged in a matrix of 40 columns each at a pitch of 1 mm each in the vertical and horizontal directions.
When it was compressed by 15 mm, stable conductivity was obtained, and the variation of each electrode was as small as 10 to 20 mΩ, and there was no problem in testing the electrical characteristics of the LGA. further,
Compression was repeatedly performed with a compression amount of 0.15 mm, and the electrical connection was continuously confirmed. As a result, no point where the resistance exceeded 100 mΩ was generated even when the electrical connection exceeded 100,000 times.
【0049】実施例3 以下、BGA16の検査用の電気コネクタの実施例を示
す。厚さ0.15mm、縦35mm、横35mmの鉄ニ
ッケル合金(ニッケル41%)製の金属板1の中心部分に
おける表裏両面に、φ0.7mm、ピッチ1.27mm
で縦横それぞれ20列(総数400)のマトリクス状に厚
さ7μmのカゼインレジスト層(エッチングレジスト膜
2)を公知のフォトレジストにより形成し、片面にアク
リル粘着剤付きのポリエステル系の保護フィルム6をラ
ミネートした。続いて、塩化第二鉄溶液で片面より0.
075mmの深さでエッチングし、保護フィルム6を剥
離し、エッチングによる凹み部分及び裏面の非カゼイン
レジスト層部分に厚さ約7μmのアクリル系樹脂からな
る電着フォトレジスト膜3を形成した。Embodiment 3 Hereinafter, an embodiment of an electrical connector for testing the BGA 16 will be described. Φ0.7 mm, pitch 1.27 mm on both front and back surfaces at the center of a metal plate 1 made of an iron-nickel alloy (nickel 41%) having a thickness of 0.15 mm, a length of 35 mm, and a width of 35 mm
A casein resist layer (etching resist film 2) having a thickness of 7 μm is formed of a known photoresist in a matrix of 20 rows and columns (total number of 400), and a polyester-based protective film 6 with an acrylic adhesive is laminated on one side. did. Subsequently, a ferric chloride solution is used to remove 0.1 from one side.
Etching was performed at a depth of 075 mm, the protective film 6 was peeled off, and an electrodeposited photoresist film 3 made of an acrylic resin having a thickness of about 7 μm was formed in the recessed portion due to the etching and the non-casein resist layer portion on the back surface.
【0050】続いて、カゼインレジスト層を5%水酸化
ナトリウム溶液により剥離し、その部分の一方の面(そ
の後ボンディングされる面)に1μmの下地ニッケルめ
っきを施すとともに、金のめっき4を0.2μm施し、
裏側の半田ボール17の接触する面には2μmの下地ニ
ッケルめっきを施した後、パラジウムのめっき4を2μ
m施した。そして、電着フォトレジスト膜3を乳酸を含
んだ腐食溶液により剥離したものをボンティング用の基
板5とした(図17〜図24参照)。Subsequently, the casein resist layer was peeled off with a 5% sodium hydroxide solution, and one side of the portion (the surface to be subsequently bonded) was plated with nickel under a thickness of 1 μm, and gold plating 4 was applied to a thickness of 0.1 mm. 2 μm,
A 2 μm underlying nickel plating is applied to the contact surface of the solder ball 17 on the back side, and then a palladium plating 4 is
m. Then, the electrodeposited photoresist film 3 peeled off with a corrosion solution containing lactic acid was used as a substrate 5 for bonding (see FIGS. 17 to 24).
【0051】次いで、めっき面におけるめっき部分の中
心に汎用のボールボンダを用いて直径50μmの金のワ
イヤ7をピッチ1.27mmで縦横それぞれ20列(総
数400)のマトリクス状にボンディングした。このと
きのワイヤ7は図25に示すように、垂直に約0.3m
m、角度45°で0.6mmオフセットし、さらに垂直
方向に伸ばした構造とした。各ワイヤ7を整えたら、各
ワイヤ7の上端部にアルゴンレーザ光を照射して上端部
に直径100μmの球状の接点7aを形成し、その高さ
が1.2mmで均一になるように揃えた(図26参照)。
そして、基板5上の外周縁に沿って縦横それぞれ35m
m、高さ1.3mm、幅5mmでPEI製の成形用のフ
レーム8を配置した。Next, using a general-purpose ball bonder, a gold wire 7 having a diameter of 50 μm was bonded at a pitch of 1.27 mm in a matrix of 20 rows each in a vertical direction and a horizontal direction (a total of 400) using a general-purpose ball bonder. At this time, as shown in FIG.
m, offset by 0.6 mm at an angle of 45 °, and further extended vertically. After each wire 7 was prepared, the upper end of each wire 7 was irradiated with argon laser light to form a spherical contact 7a having a diameter of 100 μm on the upper end, and the height was uniformed to be 1.2 mm. (See FIG. 26).
Then, along the outer peripheral edge on the substrate 5, 35 m each in the vertical and horizontal directions
m, a height of 1.3 mm and a width of 5 mm, a PEI molding frame 8 was arranged.
【0052】次いで、フレーム8内に、硬化後のゴム硬
度が25°H(JIS A)になる2液製のシリコーンゴ
ムKE1216A/B〔信越化学工業(株)製、商品名〕
各50重量部に対し、着色剤K−Color−BK−0
2B〔信越化学工業(株)製、商品名〕を10重量部添加
して混合したものを、ワイヤ7の接点7aの上端より
0.1mm高くなる量を注入し、120℃で30分間加
熱処理して硬化させた(図27参照)。Next, in the frame 8, a two-part silicone rubber KE1216A / B (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) having a cured rubber hardness of 25 ° H (JIS A) is obtained.
Colorant K-Color-BK-0 was added to each 50 parts by weight.
10 parts by weight of 2B (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) was added and mixed in an amount of 0.1 mm higher than the upper end of the contact 7a of the wire 7 and heat-treated at 120 ° C. for 30 minutes. And cured (see FIG. 27).
【0053】次いで、YAGレーザ光をスキャニング照
射してワイヤ7の接点7aを被覆しているエラストマー
層9をワイヤ7の接点7aがエラストマー層9の表面か
ら50μm突出するまで除去し(図12参照)、基板5を
パッド端子13として電解めっき4で露出させたワイヤ
7の接点7aに75μmのニッケルめっき(第一のめっ
き層10)を施し、さらにその上に硬質金めっき(第二の
めっき層11)を2μm施した(図13参照)。硬質金め
っきを施したら、基板5を塩化第二鉄溶液でエッチング
処理し、φ0.7mmのめっき部分を円柱形に残して除
去し、パッド端子13を形成した(図28参照)。そして
その後、サイドエッチングにより生じためっき4の残り
に水圧20kgf/cm2で水を噴霧し、めっき4の残
りを除去し(図29参照)、十分洗浄した後、200℃で
1時間のアフターキュア処理を行い、電気コネクタを得
た(図30参照)。Next, the elastomer layer 9 covering the contact 7a of the wire 7 is removed by scanning irradiation with a YAG laser beam until the contact 7a of the wire 7 projects 50 μm from the surface of the elastomer layer 9 (see FIG. 12). Then, the contact 7a of the wire 7 exposed by the electrolytic plating 4 using the substrate 5 as the pad terminal 13 is plated with nickel of 75 μm (first plating layer 10), and hard gold plating (second plating layer 11 ) Was applied 2 μm (see FIG. 13). After the hard gold plating, the substrate 5 was etched with a ferric chloride solution, and the plated portion having a diameter of 0.7 mm was removed leaving a cylindrical shape to form a pad terminal 13 (see FIG. 28). Then, water is sprayed at a water pressure of 20 kgf / cm 2 on the remainder of the plating 4 generated by the side etching to remove the remainder of the plating 4 (see FIG. 29), and after sufficient washing, after-curing at 200 ° C. for 1 hour. The process was performed to obtain an electrical connector (see FIG. 30).
【0054】この電気コネクタをφ0.75mm、高さ
0.6mmの半田ボール17を1.27mmピッチで縦
横それぞれ20列のマトリクス状に有するBGA16と
検査基板14間で0.2mm圧縮したところ、安定した
導通性が得られ、各電極のばらつきが15〜25mΩと
小さく、BGA16の電気的特性を試験する上でなんら
問題がなかった。さらに、0.2mmの圧縮量で繰り返
し圧縮を行い、電気的接続を継続的に確認したところ、
5万回を超えても、抵抗が100mΩを超えるポイント
が発生しなかった。When the electrical connector was compressed by 0.2 mm between the BGA 16 and the inspection board 14 having solder balls 17 having a diameter of 0.75 mm and a height of 0.6 mm at a pitch of 1.27 mm in a matrix of 20 rows and 20 columns, a stable result was obtained. The electrical conductivity of the BGA 16 was small, and the variation of each electrode was as small as 15 to 25 mΩ, and there was no problem in testing the electrical characteristics of the BGA 16. Furthermore, when compression was repeatedly performed with a compression amount of 0.2 mm and the electrical connection was continuously confirmed,
Even if it exceeded 50,000 times, no point where the resistance exceeded 100 mΩ was generated.
【0055】[0055]
【発明の効果】以上のように請求項1記載の発明によれ
ば、電極の接続抵抗のばらつきを防止し、多数の電極を
備えた電子部品にも使用することができるという効果が
ある。また、所定値以上の荷重で繰り返し使用しても、
接続抵抗が上昇するのを抑制あるいは防止することが可
能になる。As described above, according to the first aspect of the present invention, it is possible to prevent the variation in the connection resistance of the electrodes and to use the invention in an electronic component having a large number of electrodes. In addition, even if it is repeatedly used with a load equal to or greater than the predetermined value,
It is possible to suppress or prevent an increase in connection resistance.
【図1】本発明に係る電気コネクタの実施形態を示す部
分断面説明図である。FIG. 1 is a partial cross-sectional explanatory view showing an embodiment of an electric connector according to the present invention.
【図2】本発明に係る電気コネクタの実施形態を示す要
部断面説明図である。FIG. 2 is an explanatory sectional view of a main part showing an embodiment of the electric connector according to the present invention.
【図3】本発明に係る電気コネクタの実施形態における
金属板の最終的にめっきしたい部分にエッチングレジス
ト膜を形成した状態を示す断面説明図である。FIG. 3 is an explanatory sectional view showing a state in which an etching resist film is formed on a portion of the metal plate to be finally plated in the embodiment of the electrical connector according to the present invention.
【図4】図3の非エッチングレジスト膜形成部分を塩化
第二鉄溶液でエッチングした状態を示す断面説明図であ
る。FIG. 4 is an explanatory sectional view showing a state where a non-etching resist film forming portion in FIG. 3 is etched with a ferric chloride solution.
【図5】図4のエッチングによる凹み部分に電着フォト
レジスト膜を形成した状態を示す断面説明図である。5 is an explanatory cross-sectional view showing a state in which an electrodeposited photoresist film is formed in a concave portion by etching in FIG.
【図6】図5のレジスト膜を水酸化ナトリウム溶液で剥
離した状態を示す断面説明図である。FIG. 6 is an explanatory sectional view showing a state in which the resist film of FIG. 5 has been peeled off with a sodium hydroxide solution.
【図7】図6のレジスト膜を剥離した部分にめっきを施
した状態を示す断面説明図である。FIG. 7 is an explanatory sectional view showing a state where plating is applied to a portion where the resist film of FIG. 6 is peeled off;
【図8】図7のレジスト膜を腐食性液で剥離してボンデ
ィング用の基板を作製した状態を示す断面説明図であ
る。8 is an explanatory cross-sectional view showing a state in which the resist film of FIG. 7 is peeled off with a corrosive liquid to produce a bonding substrate.
【図9】図8のボンディング用の基板にワイヤをボンデ
ィングした状態を示す断面説明図である。9 is an explanatory cross-sectional view showing a state where wires are bonded to the bonding substrate of FIG. 8;
【図10】図9のワイヤの上端部にボール状の接点を形
成した状態を示す断面説明図である。10 is an explanatory sectional view showing a state where a ball-shaped contact is formed at the upper end of the wire of FIG. 9;
【図11】図10のワイヤ、フレーム、及びエラストマ
ー層を一体構成した状態を示す断面説明図である。FIG. 11 is an explanatory sectional view showing a state in which the wire, frame, and elastomer layer of FIG. 10 are integrally formed.
【図12】図11のエラストマー層から接点を露出させ
た状態を示す断面説明図である。FIG. 12 is an explanatory sectional view showing a state where a contact is exposed from the elastomer layer of FIG. 11;
【図13】図12の接点にめっき端子を形成した状態を
示す断面説明図である。FIG. 13 is an explanatory sectional view showing a state in which a plating terminal is formed on the contact point in FIG.
【図14】図13のボンディング用の基板を上下逆に反
転した状態を示す断面説明図である。14 is an explanatory cross-sectional view showing a state where the bonding substrate of FIG. 13 is turned upside down.
【図15】図14のボンディング用の基板の非めっき部
を除去してパッド端子を形成した状態を示す断面説明図
である。15 is an explanatory sectional view showing a state in which a non-plated portion of the bonding substrate of FIG. 14 is removed to form pad terminals.
【図16】本発明に係る電気コネクタの実施形態におけ
る電気コネクタの完成状態を示す断面説明図である。FIG. 16 is an explanatory sectional view showing a completed state of the electric connector in the embodiment of the electric connector according to the present invention.
【図17】本発明に係る電気コネクタの他の実施形態に
おけるパッド端子の製造工程を示す断面説明図である。FIG. 17 is an illustrative sectional view showing a step of manufacturing a pad terminal in another embodiment of the electrical connector according to the present invention.
【図18】本発明に係る電気コネクタの他の実施形態に
おけるパッド端子の変形例を示す断面説明図である。FIG. 18 is an explanatory sectional view showing a modified example of the pad terminal in another embodiment of the electric connector according to the present invention.
【図19】本発明に係る電気コネクタの他の実施形態に
おける片面からのエッチングの製造工程を示す断面説明
図である。FIG. 19 is a cross-sectional explanatory view showing a manufacturing process of etching from one side in another embodiment of the electric connector according to the present invention.
【図20】図19の金属板を塩化第二鉄溶液で他方の面
からエッチングした状態を示す断面説明図である。20 is an explanatory sectional view showing a state where the metal plate of FIG. 19 is etched from the other surface with a ferric chloride solution.
【図21】図20の保護フィルムを剥離し、凹み部分及
び裏面の非エッチングレジスト膜部分にフォトレジスト
膜を形成した状態を示す断面説明図である。21 is an explanatory sectional view showing a state in which the protective film of FIG. 20 has been peeled off and a photoresist film has been formed on the concave portion and the non-etching resist film portion on the back surface.
【図22】図21のレジスト膜を水酸化ナトリウム溶液
で剥離した状態を示す断面説明図である。FIG. 22 is an explanatory sectional view showing a state in which the resist film of FIG. 21 has been stripped with a sodium hydroxide solution.
【図23】図22の剥離した部分にめっきを施した状態
を示す断面説明図である。FIG. 23 is an explanatory sectional view showing a state where plating is applied to a peeled portion in FIG. 22;
【図24】図22の電着フォトレジスト膜を剥離してボ
ンディング用の基板を作製した状態を示す断面説明図で
ある。24 is an explanatory cross-sectional view showing a state in which the electrodeposited photoresist film of FIG. 22 is peeled off to produce a bonding substrate.
【図25】図24のめっき部分にワイヤをマトリクス状
にボンディングした状態を示す断面説明図である。FIG. 25 is an explanatory sectional view showing a state where wires are bonded in a matrix to the plated portions of FIG. 24;
【図26】図25のワイヤの上端部に球状の接点を形成
した状態を示す断面説明図である。FIG. 26 is an explanatory sectional view showing a state where a spherical contact is formed at the upper end of the wire of FIG. 25;
【図27】図26の基板に、シリコーンゴムに対し着色
剤を添加して混合したものを、ワイヤの接点の上端より
高くなる量で充填した状態を示す断面説明図である。FIG. 27 is an explanatory cross-sectional view showing a state in which the substrate of FIG. 26 is filled with a mixture obtained by adding a coloring agent to silicone rubber in an amount higher than the upper end of the contact point of the wire.
【図28】図27の基板をエッチング処理し、めっき部
分を円柱形に残して除去し、パッド端子を形成した状態
を示す断面説明図である。FIG. 28 is an explanatory sectional view showing a state in which the substrate of FIG. 27 is subjected to an etching treatment, a plated portion is removed while leaving a columnar shape, and pad terminals are formed.
【図29】図28のめっきの残りに水を噴霧してめっき
の残りを除去した状態を示す断面説明図である。FIG. 29 is an explanatory cross-sectional view showing a state in which the remainder of the plating is removed by spraying water on the remainder of the plating of FIG. 28;
【図30】図29に示す製造後の電気コネクタを示す断
面説明図である。FIG. 30 is an explanatory sectional view showing the manufactured electrical connector shown in FIG. 29;
【図31】BGAを示す斜視説明図である。FIG. 31 is an explanatory perspective view showing a BGA.
【図32】BGAの半田ボールを示す斜視説明図であ
る。FIG. 32 is an explanatory perspective view showing a BGA solder ball;
【図33】従来の電気コネクタを示す要部拡大断面図で
ある。FIG. 33 is an enlarged sectional view of a main part showing a conventional electric connector.
【図34】従来の電気コネクタの問題点を示す断面説明
図である。FIG. 34 is an explanatory sectional view showing a problem of the conventional electric connector.
1 金属板 2 エッチングレジスト膜 3 電着フォトレジスト膜 4 めっき 5 基板 6 保護フィルム 7 ワイヤ(導電線条) 7a 接点 8 フレーム 9 エラストマー層(弾性絶縁層) 10 第一のめっき層 11 第二のめっき層 12 めっき端子 13 パッド端子 14 検査基板(第一の電気的接合物) 15 電極 16 BGA(第二の電気的接合物) 17 半田ボール(電極) REFERENCE SIGNS LIST 1 metal plate 2 etching resist film 3 electrodeposition photoresist film 4 plating 5 substrate 6 protective film 7 wire (conductive wire) 7a contact 8 frame 9 elastomer layer (elastic insulating layer) 10 first plating layer 11 second plating Layer 12 Plating terminal 13 Pad terminal 14 Inspection board (first electrical connection) 15 Electrode 16 BGA (second electrical connection) 17 Solder ball (electrode)
Claims (3)
れ、これら第一、第二の電気的接合物が荷重の作用に基
づいて接近することにより、該第一、第二の電気的接合
物を導通させる電気コネクタであって、 上記第一、第二の電気的接合物の間に介在される弾性絶
縁層と、この弾性絶縁層の厚さ方向に埋設され、一定ピ
ッチで相互に離隔する複数の導電線条と、各導電線条の
一端部に接続されて該弾性絶縁層の裏面に露出し、上記
第一の電気的接合物の複数の電極にそれぞれ接触する接
触面積拡大用のめっき端子と、該各導電線条の他端部に
接続されて上記第二の電気的接合物の複数の電極にそれ
ぞれ接触する接触面積拡大用のパッド端子とを含み、 該各パッド端子の表裏両面をそれぞれめっきするととも
に、各パッド端子の一部を上記弾性絶縁層に埋没させて
残部を弾性絶縁層の表面から突出させたことを特徴とす
る電気コネクタ。1. A method according to claim 1, wherein the first and second electric joints are sandwiched between the first and second electric joints, and the first and second electric joints approach each other under the action of a load, thereby causing the first and second electric joints to approach each other. An electrical connector for conducting the electrical joint of the above, an elastic insulating layer interposed between the first and second electrical joints, embedded in the thickness direction of the elastic insulating layer, a constant pitch A plurality of conductive wires separated from each other by a contact and connected to one end of each conductive wire to be exposed on the back surface of the elastic insulating layer and to contact the plurality of electrodes of the first electrical joint, respectively. An area-enlargement plating terminal, and a contact-area-enlargement pad terminal connected to the other end of each conductive wire and in contact with the plurality of electrodes of the second electrical joint, respectively. Plating both the front and back surfaces of the pad terminals, and part of each pad terminal Electrical connector, characterized in that the remainder by buried layer is projected from the surface of the elastic insulating layer.
°Hとし、上記各導電線条の少なくとも一部を該弾性絶
縁層の厚さ方向に交わる方向に傾斜又は屈曲させて上記
荷重を軽減するようにした請求項1記載の電気コネク
タ。2. The elastic insulating layer has a hardness of 10 ° H.
2. The electrical connector according to claim 1, wherein the load is reduced by setting the temperature to a degree H and inclining or bending at least a part of each of the conductive wires in a direction intersecting the thickness direction of the elastic insulating layer.
一端部に接続されて上記弾性絶縁層の裏面側に位置する
第一のめっき層と、この第一のめっき層を被覆する第二
のめっき層とから略半球形に形成し、上記各パッド端子
の一部をその厚さの略25%以上とした請求項1又は2
記載の電気コネクタ。3. A first plating layer connected to one end of each of the conductive wires and located on the back side of the elastic insulating layer, and a first plating layer covering the first plating layer. 3. The semiconductor device according to claim 1, wherein the second plating layer is formed in a substantially hemispherical shape, and a part of each of the pad terminals has a thickness of about 25% or more.
Electrical connector as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11160007A JP2000348793A (en) | 1999-06-07 | 1999-06-07 | Electric connector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11160007A JP2000348793A (en) | 1999-06-07 | 1999-06-07 | Electric connector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000348793A true JP2000348793A (en) | 2000-12-15 |
Family
ID=15705970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11160007A Pending JP2000348793A (en) | 1999-06-07 | 1999-06-07 | Electric connector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000348793A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008038202A (en) * | 2006-08-07 | 2008-02-21 | Auto Network Gijutsu Kenkyusho:Kk | Partial plating method |
| USRE45924E1 (en) | 2005-09-22 | 2016-03-15 | Enplas Corporation | Electric contact and socket for electrical part |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3008375U (en) * | 1994-08-30 | 1995-03-14 | しなのポリマー株式会社 | Electrical connector with contact material |
| JPH08273725A (en) * | 1995-04-04 | 1996-10-18 | Shin Etsu Polymer Co Ltd | Electric connector and manufacturing method thereof |
| JPH10241465A (en) * | 1997-02-20 | 1998-09-11 | Tokai Rubber Ind Ltd | Manufacture of anisotropic conductive film and anisotropic conductive film obtained thereby |
-
1999
- 1999-06-07 JP JP11160007A patent/JP2000348793A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3008375U (en) * | 1994-08-30 | 1995-03-14 | しなのポリマー株式会社 | Electrical connector with contact material |
| JPH08273725A (en) * | 1995-04-04 | 1996-10-18 | Shin Etsu Polymer Co Ltd | Electric connector and manufacturing method thereof |
| JPH10241465A (en) * | 1997-02-20 | 1998-09-11 | Tokai Rubber Ind Ltd | Manufacture of anisotropic conductive film and anisotropic conductive film obtained thereby |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE45924E1 (en) | 2005-09-22 | 2016-03-15 | Enplas Corporation | Electric contact and socket for electrical part |
| JP2008038202A (en) * | 2006-08-07 | 2008-02-21 | Auto Network Gijutsu Kenkyusho:Kk | Partial plating method |
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