JP2000232062A - Development method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve uniformity of a developing process when a line width at a central portion of a pattern formed on a substrate, for example, a wafer surface is fine, or when in-plane uniformity of development is poor. thing. SOLUTION: While supplying a developing solution to the surface of the wafer W for 0.3 seconds, the wafer W is rotated by 180 degrees at a rotation speed of 250 rpm to perform pre-wetting to wet the surface of the wafer W, and then to the surface of the wafer W The developer is supplied for 1 second, and the wafer W is rotated 180 degrees at a rotation speed of 30 rpm to fill the surface of the wafer W with the developer, and then the rotation of the wafer W is stopped and left for a predetermined time. Perform development. In this way, the pre-wet improves the wetting of the developer, thereby suppressing the occurrence of uneven development. Further, by performing the pre-wet while rotating the wafer W, the developer easily spreads to the peripheral portion even during the pre-wet. Therefore, the uniformity of development is improved even when the line width at the center of the pattern is fine.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device used in one step of forming a predetermined pattern on a substrate, for example.

[0002]

2. Description of the Related Art Semiconductor wafers (hereinafter referred to as "wafers")
A mask for forming a predetermined pattern on the surface of a liquid crystal display glass substrate (LCD substrate) is formed by applying a resist on the surface of a substrate such as a wafer and then applying light, electron beam or ion beam to the resist surface. It is obtained by irradiating and developing.

Here, the developing treatment is to dissolve a part irradiated with light or the like in the exposure step or a part not irradiated with an aqueous alkali solution or the like. Conventionally, for example, it is performed as follows. That is, first, as shown in FIG. 14A, a substrate, for example, a wafer W is suction-held on a spin chuck 10 having, for example, a vacuum suction function, and a rod-shaped supply nozzle 11 having a large number of ejection holes is attached to the wafer W. It is arranged at the center, and then, as shown in FIG.
By rotating the wafer W by 180 degrees while supplying the developing solution D from 1 to the surface of the wafer W, a film of the developing solution D is formed on the resist film. Then, as shown in FIG. Development was performed by leaving the rotation of W stopped for, for example, 60 seconds.

[0004]

However, when the above-described development processing is performed, development unevenness may occur due to a change in the type or pattern shape of the resist film. In other words, if the developing solution and the resist solution are not sufficiently mixed and the progress of the development is uneven in the surface of the substrate or the line width of the pattern is narrow, the central portion is more developed than the peripheral portion. Is excessively advanced, and the uniformity of the development line width is eventually deteriorated.

The present invention has been made under such circumstances, and an object of the present invention is to provide a developing method for improving the uniformity of a developing process.

[0006]

For this reason, the developing method of the present invention uses a nozzle having a supply hole formed along the substrate and supplies a developing solution from the nozzle to the surface of the substrate to perform development. In the developing method, a nozzle is brought close to the surface of the substrate before the developing solution is filled on the substrate, and a small amount of the developing solution is supplied from the nozzle to the surface of the substrate to wet the surface of the substrate. Supplying the developing solution from the nozzle to the substrate surface while relatively moving the substrate and the nozzle while keeping the supply hole of the nozzle in contact with the developing solution on the substrate. It is characterized by including a step of pouring a developing solution on the surface, and a step of developing the surface of the substrate while keeping the developing solution on the substrate.

In such a method, since the substrate surface is wetted with a small amount of the developing solution and then the liquid level of the developing solution is applied to the substrate surface, the wetting of the developing solution is improved, and the developing solution is uniformly applied. And the occurrence of uneven development can be suppressed.

According to a second aspect of the present invention, there is provided a developing method for performing development by supplying a developing solution from a nozzle to a surface of a substrate by using a nozzle having a supply hole formed along the substrate. Before filling the liquid, bring the nozzle close to the substrate surface and supply a small amount of developing solution from the nozzle to the substrate surface while rotating the substrate to wet the substrate surface, and supply the nozzle with a supply hole on the substrate. Contacting the developing solution with the developing solution, and then supplying the developing solution from the nozzle to the substrate surface while relatively rotating the substrate and the nozzle while keeping the supply hole of the nozzle in contact with the developing solution on the substrate; And a step of developing the surface of the substrate while maintaining the state in which the developing solution is kept on the substrate.

In such a method, in the step of wetting the surface of the substrate, a small amount of the developing solution is supplied from the nozzle to the surface of the substrate while rotating the substrate, so that the developing solution is diffused from the central portion to the peripheral portion of the substrate. It's easy to do. Therefore, even if the line width of the pattern in the central portion of the substrate is fine, the degree of progress of the development in the central portion and the peripheral portion is uniform, and the uniformity of the development can be improved.

According to a third aspect of the present invention, there is provided a developing method for performing development by supplying a developing solution from a nozzle to a surface of a substrate by using a nozzle having a supply hole formed along the substrate.
A step of supplying the developing solution from the nozzle to the substrate surface and pouring the developing solution on the substrate surface while relatively moving the substrate and the nozzle while keeping the supply hole of the nozzle in contact with the developing solution on the substrate; and And then developing the substrate surface while the developer is kept in a liquid state on the substrate.The step of developing the substrate surface includes stopping the rotation of the substrate to remove the developer by inertia. The method includes a step of moving at least once.

In such a method, the step of rotating the substrate and then stopping the rotation is performed at least once in the step of developing the surface of the substrate. Moves, thereby replacing the old developing solution with the new developing solution, thereby improving the uniformity of development.

According to a fourth aspect of the present invention, there is provided a developing method for performing development by using a nozzle having a supply hole formed along a substrate and supplying a developing solution from the nozzle to the substrate surface.
Time X required for wetting of the substrate surface before liquid pouring, time Y required for liquid pouring, relative speed A of the substrate to the nozzle during liquid pouring, and time Z after liquid pouring to start cleaning.
And a recipe storage unit storing a plurality of development recipes including a combination of the times X, Y, and Z, and
A recipe selection unit for selecting a recipe from the recipe storage unit and setting X, Y, A and Z; and a nozzle for approaching the substrate before filling the substrate with the developing solution to wet the substrate surface. Supplying a small amount of developing solution from the nozzle to the substrate surface for a set time X to contact the supply hole of the nozzle with the developing solution on the substrate, and then contacting the supplying hole of the nozzle with the developing solution on the substrate. While the substrate and the nozzle are relatively moved at the set speed A, a developing solution is supplied from the nozzle to the substrate surface at the set time Y to pour the developing solution on the substrate surface, and Developing the substrate surface while remaining in a liquid-filled state for a set time Z on the substrate;
And thereafter cleaning the substrate with a cleaning liquid. In such a method, since the developing process is performed by selecting a recipe according to the developing state, an appropriate developing process can be performed according to the developing state, and the uniformity of the development is improved.

[0013]

FIG. 1 is a longitudinal sectional view of a developing apparatus used for carrying out the method of the present invention. In FIG. The mounting portion 3 is rotatably supported in a direction and vertically movable, and has, for example, a vacuum suction function for holding a substrate such as a wafer W substantially horizontally. A nozzle 3 for supplying a developer to the surface of the wafer W is provided above the wafer W vacuum-adsorbed to the mounting portion 3.

As shown in FIGS. 2 (a) and 2 (b), the nozzle 3 is provided on a lower surface of the nozzle main body 31 formed in, for example, a horizontally elongated rod shape.
Supply hole 3 for discharging the developer along the radial direction on the surface
2, the nozzle body 31 and the supply hole 32
Is configured to supply the developer near the center line A (a line extending in the radial direction passing through the center O of the wafer W) on the surface of the wafer W.

The nozzle 3 includes a horizontal arm 33 and a support shaft 34 provided at a base end of the horizontal arm 33 and configured to be able to move up and down by a lifting mechanism 35. 35 is a guide rail 3 laid on the bottom plate of the developing device.
6 so as to be movable horizontally. Thus, the nozzle 3 is at a standby position outside the mounting portion 2 and at a position substantially above the central portion of the mounting portion 2 (hereinafter, referred to as an “upper position”) so as not to be in the way when the wafer W is loaded and unloaded. And the upper position,
It is possible to ascend and descend from a processing position (hereinafter, referred to as a “processing position”) where the developing process is performed, which is a position lowered from that position. Further, the nozzle 3 is provided with a supply pipe 37 for communicating with a developer storage tank (not shown).

Further, the developing device surrounds the periphery of the wafer W sucked and held on the mounting portion 2, and when the developer supplied on the wafer W is shaken off, the liquid scatters around. Is provided. FIG. 1
Reference numeral 24 denotes a drainage passage, and reference numeral 25 denotes a wafer transfer port.

Next, an embodiment of the method of the present invention, which is performed by using the above-described apparatus, is applied to a developing process in the case where the line width of the pattern at the central portion of the wafer is small.
This will be described with reference to FIG. First, a wafer W on which a resist film has been formed and exposed is carried into the apparatus through a wafer carrying port 25 by a carrying arm (not shown), and a lifting arm (not shown) incorporated in the mounting portion 2 and a cooperation of the carrying arm. For operation, it is placed on the placement section 2 and vacuum-adsorbed. As a method of pressing the wafer W against the mounting portion, for example, a mechanical chuck that presses the periphery of the wafer W mechanically may be used.

As shown in FIGS. 3A and 5, the nozzle 3 at the standby position is moved through the position above the mounting portion 2 while the mounting portion 2 is rotated at a rotation speed of, for example, 250 rpm. To the processing position in one second, for example. Next, FIG.
(B) As shown in FIG. 5, the developing solution D is discharged from the nozzle 3 for, for example, 0.3 seconds to supply the developing solution D to the vicinity of the center line A of the wafer W, and the mounting portion 2 is moved to, for example, 250 r.
The pre-wet is performed by rotating 180 degrees at a rotation speed of pm. Here, at the processing position, the tip of the supply hole 32 of the nozzle 3 comes into contact with the developing solution supplied from the nozzle 3 to the surface of the wafer W. When the developer D is supplied to the surface of the wafer W, the diffusion of the developer D due to the centrifugal force of rotation and the development of the developer D through the supply hole 32 of the nozzle 3 cause the developer D to spread to such an extent that the entire surface of the wafer W becomes wet. A liquid film is formed.

Next, a developer is loaded. That is, FIG.
(A), as shown in FIG. 5, while the nozzle 3 is positioned at the processing position, the developer D is discharged from the supply hole 32 for one second, for example, to supply the developer D near the center line A of the wafer W. At the same time, the mounting unit 2 is rotated at a rotational speed of 30 rpm for 18
By rotating the wafer W by 0 degrees, the developer D is filled on the entire surface of the wafer W. That is, while the tip of the supply hole 32 of the nozzle 3 is in contact with the developer supplied from the nozzle 3 to the surface of the wafer W, the developer D is supplied from the supply hole 32 to the surface of the wafer W while rotating the wafer W by 180 degrees. By supplying the developer D, the developer D is applied to the entire surface of the wafer W by the diffusion of the developer D due to the rotational centrifugal force and the development of the developer D through the supply hole 32 of the nozzle 3, and the liquid is filled.

Subsequently, as shown in FIGS. 4B and 5, the rotation of the wafer W is stopped, the nozzle 3 is raised from the processing position to the upper position, and the nozzle 3 is left in this state for, for example, 53.7 seconds. Perform development. After the development is performed in this manner, the cleaning is performed by supplying a cleaning liquid to the wafer surface, and then the wafer surface is dried by rotating the wafer at a high speed.

In such a developing method, since the surface of the wafer is wetted with the developing solution and then the developing solution is added,
The wetting of the developing solution is improved, and the developing solution
From the center to the periphery. For this reason, since the developer can be uniformly applied, the occurrence of development unevenness can be suppressed.

As shown in FIG. 5, since the nozzle 3 is moved from the standby position to the processing position in the pre-wet process, the developer D is supplied to the surface of the wafer W by pre-wet to form a liquid film. Until the wafer W is moved to, for example, 250
Since the liquid is continuously rotated at a rotation speed of rpm, the developer D easily spreads from the central portion to the peripheral portion of the wafer W due to centrifugal force even when a thin liquid film is formed. Therefore, when the liquid film is formed, there is no possibility that the development of the central portion of the wafer W proceeds as compared with the peripheral portion. Further, by performing the pre-wet, the developing solution easily spreads from the central portion to the peripheral portion of the wafer W even when the developing solution is filled. As a result, the contact time between the resist film and the developing solution between the central portion and the peripheral portion of the wafer W does not change so much, even if the line width of the pattern at the central portion of the wafer W is small. The development of the central portion is prevented from progressing too much as compared with the peripheral portion, and the uniformity of the development line width can be prevented from deteriorating.

At this time, the pre-wet may be performed by supplying the developing solution for about 0.1 to 0.3 seconds without rotating the wafer W, but the pattern at the center of the wafer W is fine. In some cases, it is desirable to rotate the wafer W.

Next, another example of the method of the present invention, which is performed using the above-described apparatus, is described as follows.
A case where the purpose is to improve the in-plane uniformity will be described with reference to FIGS. 6 to 8. First, the wafer W on which the resist film is formed and exposed is vacuum-sucked to the mounting section 2 in the same manner as in the above-described example, and as shown in FIGS. The nozzle 3 at the standby position is moved to the processing position via the position above the mounting unit 2 in one second, for example. Next, as shown in FIG. 6B and FIG.
Without rotating the developer D from the nozzle 3 at the processing position.
Is discharged, for example, for 0.3 second to supply the developing solution D to the vicinity of the center line A of the wafer W to perform pre-wetting.
A liquid film of the developing solution D is formed to such an extent that the surface of the developer becomes wet.

Next, as shown in FIGS. 6C and 8, while the nozzle 3 is located at the processing position, the developer D
The developer D is supplied to the vicinity of the center line A of the wafer W, and the mounting part 2 is rotated 180 degrees at a rotation speed of, for example, 30 rpm, so that the developer D is applied to the entire surface of the wafer W. Perform prime.

Subsequently, development is performed. That is, as shown in FIGS. 6A and 8, the rotation of the wafer W is stopped, the nozzle 3 is raised from the processing position to the upper position, and left in this state for, for example, 10 seconds. By rotating the wafer W at a rotation speed of 30 rpm for 1 second, for example,
Rotate by 80 degrees and repeat this step at least once, for example, three times. Thereafter, as shown in FIG. 6B, the wafer W is left standing, for example, for 20.7 seconds while the rotation of the wafer W is stopped. In this example, development is performed in the entire process of FIGS. 6A and 6B, and the time of each process is determined so that the total development time is, for example, 53.7 seconds.

In such a developing method, at the time of development, FIG.
Since the rotation of the wafer W is stopped and left after the rotation of the wafer W, the developer moves due to the inertial force when the rotation is stopped, and the old developer and the new developer are exchanged. As a result, the progress of development can be made substantially uniform in the plane, so that variations in development can be suppressed and the uniformity of development in the plane of the wafer W can be improved.

In this embodiment, the step of rotating the wafer W, stopping the rotation, and allowing the wafer W to stand, which is performed in the developing step, may be performed at least once. Also in this embodiment, the pre-wet process may be performed by rotating the wafer W, or the pre-wet process may not be performed.

Next, still another example of the method of the present invention performed using the above-described apparatus will be described. First, an example of a developing device in which this example is implemented will be briefly described with reference to FIG. 9. In FIG. 9, reference numeral 4 denotes a control unit, which includes a recipe memory unit 41 serving as a recipe storage unit and a selection unit 42.
, A controller 43, and these recipe memory units 41,
CP for controlling the operation of the selection means 42 and the controller 43
U44. The recipe memory unit 41 stores a plurality of recipes 40 for development processing. The recipe 40 prepared in the recipe memory unit 41 is selected by the selection unit 42 according to the development state, and the selected recipe 40 is selected.
The operation of the motor M of the mounting portion 2 and the operation of the lifting / lowering means 35 of the nozzle 3 are controlled by the controller 43 based on the above.

Here, an example of the recipe 40 will be described with reference to FIG. As shown in FIG. 10A, the recipe 40 performs a pre-wet process without rotating the wafer W.
The developing process is performed for Y seconds while rotating the wafer W at the rotation speed (relative speed A) of Arpm, and the developing process is performed for Z seconds without rotating the wafer W, so that the total processing time is 56 seconds. Seconds, that is, Z is 55- (X
+ Y).

As shown in FIG. 10B, the X, Y, Z, and A are determined in accordance with the development state. The development state is, for example, the line width of the pattern at the center of the wafer. When the thickness is small (state 1), the uniformity of the development line width of the pattern at the center of the wafer is poor, and when the film thickness at the center of the wafer is small (state 2), the uniformity of the application of the developer is poor ( State 3), the case where the uniformity of the application of the developer is poor and the uniformity of the developing line width is also poor (state 4), the case where the uniformity of the application of the developer is poor (state 5), and the like are prepared. And the X, Y,
There are a plurality of combinations of Z and A, and an appropriate combination can be selected according to the development state.

Next, the method of this embodiment will be described with reference to FIG.
1 will be described. First, an appropriate recipe 40 is selected by the selection means 42 according to the development state, and the recipe 40 is selected.
While controlling the motor M and the lifting / lowering means 35 based on
The wafer W on which the resist film has been formed and exposed is vacuum-sucked to the mounting portion 2 in the same manner as in the above-described example, and as shown in FIG. A certain nozzle 3 is moved to the processing position via the position above the mounting portion 2 in, for example, one second. Next, as shown in FIG.
The developer D is discharged from the nozzle 3 located at the processing position for, for example, X seconds without rotating the mounting portion 2 to supply the developer D to the vicinity of the center line A of the wafer W to perform pre-wetting. A liquid film of the developing solution D is formed to such an extent that the surface of the developer becomes wet.

Next, as shown in FIG. 11C, the developing solution D is discharged from the nozzle 3 located at the processing position for, for example, Y seconds to supply the developing solution D to the vicinity of the center line A of the wafer W, The developer 2 is deposited on the entire surface of the wafer W by rotating the unit 2 at, for example, 180 degrees at the rotation speed of Apm. Subsequently, as shown in FIG. 11D, the rotation of the wafer W is stopped, the nozzle 3 is raised from the processing position to the upper position, and in this state, development is performed by leaving the nozzle 3 for, for example, Z (55− (X + Y)) seconds. Do.

In such a developing method, the supply time of the developer D at the time of pre-wetting, the supply time of the developer D at the time of filling the developer, and the Since the number of rotations of W and the development time during development are set to appropriate values, processing corresponding to the development state can be appropriately performed. For this reason, even in the case where the development line width is defective or the development unevenness occurs, it is possible to respond promptly in accordance with the state, thereby suppressing the variation in the total development and improving the uniformity of the development. be able to.
In this embodiment, the pre-wet may be performed by rotating the wafer W.

Next, an outline of an example of a coating / developing apparatus in which a developing apparatus used for carrying out the developing method according to the present invention is incorporated in a unit will be described with reference to FIGS. 12 and 13, reference numeral 5 denotes a loading / unloading stage for loading / unloading a wafer cassette. For example, a cassette C containing 25 sheets is placed by, for example, an automatic transfer robot. A transfer arm 50 for the wafer W is provided in an area facing the loading / unloading stage 5 so as to be freely rotatable in X, Y directions and θ (rotation about a vertical axis). Further, on the back side of the transfer arm 50, for example, on the right side when viewed from the loading / unloading stage 5, for example, on the right side, there is a coating / developing system unit u1.
However, on the left, front and back sides, a heating / cooling unit u
2, u3, and u4, respectively, and the wafer W between the coating / developing system unit and the heating / cooling system unit.
A wafer transfer arm MA, which is configured to be able to move up and down, move left and right, back and forth, and rotate around a vertical axis, for example, is provided. However, in FIG. 12, the unit u2 and the wafer transfer arm MA are not drawn for convenience.

In the coating / developing system unit, for example, two developing units 51 are provided in an upper stage, and two coating units 52 are provided in a lower stage. In a heating / cooling system unit, a heating unit, a cooling unit, a hydrophobizing unit, and the like are vertically arranged. When the above-described portion including the coating / developing system unit and the heating / cooling system unit is referred to as a clean track, an exposing device 6 is provided at an inner side of the clean track via an interface unit 6.
0 is connected. The interface unit 6
For example, the wafer W is transferred between the clean track and the exposure apparatus 60 by a wafer transfer arm 61 configured to be movable up and down, movable left and right, back and forth, and rotatable around a vertical axis.

The flow of wafers in this apparatus will be described. First, a wafer cassette C containing a wafer W is loaded into the loading / unloading stage 5 from the outside, and a wafer transfer arm is loaded.
The wafer W is taken out of the cassette C by the
The wafer is transferred to the wafer transfer arm MA via a transfer table which is one of the shelves of the heating / cooling unit u3. Next, after the hydrophobic treatment is performed in the processing section of one shelf in the unit u3, a resist liquid is applied by the application unit 52 to form a resist film. After being heated by the heating unit, the wafer W coated with the resist film is sent to the exposure device 60 via the interface unit 6, where exposure is performed via a mask corresponding to the pattern.

Thereafter, the wafer W is heated by the heating unit and then cooled by the cooling unit.
The resist film is sent to the developing device 1 and subjected to a development process, thereby forming a resist mask. Thereafter, the wafer W is returned to the cassette C on the loading / unloading stage 5.

In the above, in the present invention, the substrate is not limited to a wafer, but may be a glass substrate for a liquid crystal display. In the step of applying a developing solution to the substrate, the nozzle is rotated instead of rotating the substrate. May be performed.

The nozzle may be arranged at the peripheral edge of the substrate, and a developer may be supplied to the surface of the substrate at this position to perform pre-wet or liquid accumulation of the developer. And the substrate may be relatively slid to allow the developing solution to spread. Alternatively, the supply holes of the nozzles may be formed along the length of the radius of the wafer, and the nozzles may be rotated by 360 degrees with respect to the substrate to perform the pre-wet or the liquid accumulation of the developer.

[0041]

According to the present invention, there is provided a developing method in which a nozzle having a supply hole formed along a substrate is used to supply a developing solution from the nozzle to the surface of the substrate for development.
The uniformity of the developing process can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of a developing device used for carrying out a developing method of the present invention.

FIG. 2 is a perspective view and a bottom view showing a nozzle used in the developing device.

FIG. 3 is a process chart showing one embodiment of the developing method of the present invention.

FIG. 4 is a process chart showing one embodiment of the developing method of the present invention.

FIG. 5 is a characteristic diagram for explaining an embodiment of the developing method of the present invention.

FIG. 6 is a process chart showing another example of the developing method of the present invention.

FIG. 7 is a process chart showing another example of the developing method of the present invention.

FIG. 8 is a characteristic diagram for explaining another example of the developing method of the present invention.

FIG. 9 is a cross-sectional view showing an example of a developing device used for implementing still another example of the developing method of the present invention.

FIG. 10 is a characteristic diagram for explaining still another example of the developing method of the present invention.

FIG. 11 is a process chart showing still another example of the developing method of the present invention.

FIG. 12 is a perspective view showing an example of a coating / developing device incorporating the developing device.

FIG. 13 is a plan view showing an example of a coating / developing device incorporating the developing device.

FIG. 14 is a process chart showing a conventional developing method.

[Explanation of symbols]

 2 Placement part 3 Nozzle 35 Elevating mechanism 4 Control means 40 Recipe 41 Recipe memory part 42 Selection means W Semiconductor wafer M Motor D Developer

Claims (5)

[Claims] In a developing method, a developing solution is supplied from the nozzle to a surface of a substrate by using a nozzle having a supply hole formed along the substrate to perform development. Bringing a nozzle close to the substrate surface, supplying a small amount of developing solution from the nozzle to the substrate surface to wet the substrate surface, and bringing the nozzle into a supply hole of the nozzle with the developing solution on the substrate; A step of supplying the developing solution from the nozzle to the substrate surface and pouring the developing solution on the substrate surface while relatively moving the substrate and the nozzle while keeping the holes in contact with the developing solution on the substrate; Developing the surface of the substrate while keeping the liquid on the substrate. 2. In a developing method of using a nozzle having a supply hole formed along a substrate and supplying a developing solution from the nozzle to a surface of the substrate to perform development, before the developing solution is filled on the substrate, A step of bringing a small amount of a developing solution from the nozzle to the surface of the substrate while rotating the substrate and bringing a supply hole of the nozzle into contact with the developing solution on the substrate in order to bring the nozzle close to the surface of the substrate and wet the surface of the substrate; Then, while relatively rotating the substrate and the nozzle while keeping the supply hole of the nozzle in contact with the developing solution on the substrate, the developing solution is supplied from the nozzle to the surface of the substrate to fill the surface of the substrate with the developing solution. And a step of developing the surface of the substrate while keeping the developing solution on the substrate. 3. A developing method for performing development by supplying a developing solution from a nozzle to a surface of a substrate using a nozzle having a supply hole formed along the substrate, wherein the supply hole of the nozzle is developed on the substrate. A step of supplying a developing solution from the nozzle to the surface of the substrate while the substrate and the nozzle are relatively moved while being kept in contact with the solution, and filling the surface of the substrate with the developing solution; Developing the substrate surface while remaining in a piled state, wherein the step of developing the substrate surface includes at least one step of rotating and stopping the substrate and moving the developer by inertial force. Characteristic development method. 4. A developing method in which a nozzle having a supply hole formed along a substrate is used to supply a developing solution from the nozzle to a surface of the substrate to perform development. Time X, time Y required for liquid filling, relative speed A of the substrate to the nozzle at the time of liquid filling, and time Z after liquid filling to start cleaning
And a recipe storage unit storing a plurality of development recipes in which the total time of the times X, Y and Z is constant, and selecting a recipe from the recipe storage unit to set X, Y, A and Z A recipe selecting unit for causing a nozzle to approach the substrate before filling the substrate with the developing solution and supplying a small amount of developing solution from the nozzle to the substrate surface for a set time X to wet the substrate surface; Contacting the supply hole of the nozzle with the developing solution on the substrate; and setting the nozzle while relatively moving the substrate and the nozzle at the set speed A while keeping the supply hole of the nozzle in contact with the developing solution on the substrate. Supplying the developing solution from the nozzle to the substrate surface at the time Y to fill the developing solution on the substrate surface; and developing the substrate surface while the developing solution is maintained on the substrate for the set time Z. And then the substrate Developing method characterized by and a step of washing with solution purification. 5. The step of filling the surface of the substrate with a developing solution,
5. The developing method according to claim 1, wherein the developing is performed while rotating the substrate and the nozzle relatively.