JP2000228544A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2000228544A JP2000228544A JP2919299A JP2919299A JP2000228544A JP 2000228544 A JP2000228544 A JP 2000228544A JP 2919299 A JP2919299 A JP 2919299A JP 2919299 A JP2919299 A JP 2919299A JP 2000228544 A JP2000228544 A JP 2000228544A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- sealing body
- resin sealing
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W90/756—
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
(57)【要約】
【課題】 一次樹脂封止体の表面または表面近傍に、半
導体発光素子の発光波長を他の波長に変換する波長変換
材料層を設けることにより、樹脂封止体によるレンズ機
能を損なうことなく、発光素子の波長が所望の波長に変
換されるようにする。
【解決手段】 半導体発光装置は、半導体発光素子2を
収容して載置するカップ10と、カップ10内に載置さ
れた半導体発光素子2を封止する一次樹脂封止体3と、
一次樹脂封止体3を封止しレンズ機能を有する二次樹脂
封止体6と、を有する。一次樹脂封止体3の表面または
表面近傍に、半導体発光素子の発光波長を他の波長に変
換する波長変換材料層4が設けられている。
(57) [Problem] To provide a lens function by a resin sealing body by providing a wavelength conversion material layer for converting the emission wavelength of a semiconductor light emitting element to another wavelength on or near the surface of a primary resin sealing body. , So that the wavelength of the light emitting element is converted to a desired wavelength. The semiconductor light emitting device includes a cup (10) for housing and mounting the semiconductor light emitting element (2), a primary resin sealing body (3) for sealing the semiconductor light emitting element (2) mounted in the cup (10),
A secondary resin sealing body 6 that seals the primary resin sealing body 3 and has a lens function. A wavelength conversion material layer 4 for converting the emission wavelength of the semiconductor light emitting element to another wavelength is provided on or near the surface of the primary resin sealing body 3.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、レンズ型の樹脂封
止体を備えた発光ダイオード等の半導体発光装置に関
し、詳しくは発光素子から発光された光を波長変換して
レンズ外部に放射する半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light-emitting device such as a light-emitting diode having a lens-type resin-sealed body, and more particularly, to a semiconductor that converts the wavelength of light emitted from a light-emitting element and emits the light to the outside of the lens. The present invention relates to a light emitting device.
【0002】[0002]
【従来の技術】発光素子から発光された光を波長変換し
てレンズ外部に放射する半導体発光装置において、近年
では、赤、緑、青の中間色又は白色等の混合色の発光が
可能な半導体発光装置が望まれている。中間色又は混合
色を実現するため、半導体発光素子の発光により励起さ
れて蛍光を発する蛍光物質を樹脂封止体中に添加し、半
導体発光素子の光を波長変換して樹脂封止体の外部に放
射する半導体発光装置が提案されている。2. Description of the Related Art In recent years, a semiconductor light emitting device which converts light emitted from a light emitting element into a wavelength and emits the light to the outside of a lens has recently been capable of emitting a neutral color of red, green, blue or a mixed color of white or the like. A device is desired. In order to realize a neutral color or a mixed color, a fluorescent substance which emits fluorescence when excited by light emission of the semiconductor light emitting element is added to the resin sealing body, and the wavelength of the light of the semiconductor light emitting element is converted to the outside of the resin sealing body. Semiconductor light emitting devices that emit light have been proposed.
【0003】例えば、特開平7−99345号公報に開
示された半導体発光装置は、図5に示すように、一端に
皿状のカップ10を備えた第1のリードフレーム11
と、一端に細線接続部を備えた第2のリードフレーム1
2と、該カップ10上に固着された半導体発光素子2
と、該半導体発光素子2に形成された電極と細線接続部
との間を電気的に接続する導電性ワイヤ13と、半導体
発光素子2、ワイヤ13、第1のリードフレーム11お
よび第2のリードフレーム12の一端を封止する樹脂封
止体15とを有する。For example, as shown in FIG. 5, a semiconductor light emitting device disclosed in Japanese Patent Application Laid-Open No. 7-99345 has a first lead frame 11 having a dish-shaped cup 10 at one end.
Lead frame 1 having a thin wire connection portion at one end
2 and a semiconductor light emitting element 2 fixed on the cup 10
A conductive wire 13 for electrically connecting between an electrode formed on the semiconductor light emitting element 2 and the fine wire connecting portion; a semiconductor light emitting element 2, the wire 13, the first lead frame 11, and the second lead And a resin sealing body 15 that seals one end of the frame 12.
【0004】この装置によれば、蛍光物質が混入された
一次樹脂で発光素子が封止され、この一次樹脂封止体1
6をさらに二次樹脂封止体17で包囲するように構成さ
れており、発光素子の波長が一次樹脂封止体16内にお
いて所望の波長に変換され、しかもカップ10によって
光が反射されると共に二次樹脂封止体17にて形成され
るレンズにより反射光が集光されるので、変換光の集光
効率が向上するとされている。また、一次樹脂封止体1
6がカップ10の縁部の水平面よりも低くなるようにカ
ップ10内に充填され、外部から入射する光がカップ1
0の縁で遮られ蛍光物質にまで到達しないので、発光装
置の混色を防止できるとされている。According to this device, the light emitting element is sealed with the primary resin mixed with the fluorescent substance, and the primary resin sealing body 1 is sealed.
6 is further surrounded by a secondary resin sealing body 17, the wavelength of the light emitting element is converted to a desired wavelength in the primary resin sealing body 16, and the light is reflected by the cup 10. Since the reflected light is condensed by the lens formed by the secondary resin sealing body 17, the condensing efficiency of the converted light is improved. Also, the primary resin sealing body 1
6 is filled into the cup 10 so as to be lower than a horizontal plane at the edge of the cup 10, and light incident from the outside is
It is described that color mixing of the light emitting device can be prevented because the light is not blocked by the edge of 0 and does not reach the fluorescent substance.
【0005】しかし、特開平7−99345号公報に開
示された半導体発光装置では、波長蛍光物質が一次樹脂
中に混入されて一次樹脂封止体16が構成されているの
で、樹脂中に波長変換材料を分散させる際に、波長変換
材料の比重が樹脂の比重よりも大きいために蛍光物質が
一次樹脂封止体16の底部に溜まりやすく、また蛍光物
質の分散性が悪いために、発光素子の波長が一次樹脂封
止体16内において効率良く変換されていないという欠
点があった。さらに、多量の蛍光物質を必要とするので
高価になるという欠点があった。However, in the semiconductor light emitting device disclosed in Japanese Patent Application Laid-Open No. 7-99345, the wavelength conversion material is mixed in the primary resin to form the primary resin sealing body 16, so that the wavelength conversion is performed in the resin. When dispersing the material, the fluorescent substance easily accumulates at the bottom of the primary resin sealing body 16 because the specific gravity of the wavelength conversion material is larger than the specific gravity of the resin, and the dispersibility of the fluorescent substance is poor. There is a disadvantage that the wavelength is not efficiently converted in the primary resin sealing body 16. In addition, there is a disadvantage that a large amount of a fluorescent substance is required, so that it becomes expensive.
【0006】また、特開平10−200165号公報に
は、別の構成の半導体発光装置が開示されている。この
半導体発光装置においては、蛍光物質を含有する蛍光カ
バーが半導体発光素子を封止する樹脂封止体の外面に被
着されており、該蛍光カバーによって半導体発光素子か
ら生じる光りとは異なる波長の光が取り出されるとされ
ている。Japanese Unexamined Patent Application Publication No. Hei 10-200165 discloses a semiconductor light emitting device having another configuration. In this semiconductor light emitting device, a fluorescent cover containing a fluorescent substance is attached to an outer surface of a resin sealing body that seals the semiconductor light emitting element, and the fluorescent cover has a wavelength different from light emitted from the semiconductor light emitting element. It is said that light is extracted.
【0007】しかし、このような構成の半導体発光装置
は、レンズを構成する樹脂封止体の外面に蛍光カバーを
被着しているため、樹脂封止体によるレンズの機能が損
なわれるという欠点があり、また樹脂封止体の表面にお
いて異なる光束の密度の違いによる蛍光物質の濃度をコ
ントロールしなければ均一な色調の白色を得ることがで
きないという欠点がある。However, the semiconductor light emitting device having such a configuration has a drawback that the function of the lens is impaired by the resin seal because the fluorescent cover is attached to the outer surface of the resin seal forming the lens. Also, there is a disadvantage that a white color with a uniform color tone cannot be obtained unless the concentration of the fluorescent substance is controlled on the surface of the resin sealing body due to the difference in the density of different light fluxes.
【0008】[0008]
【発明が解決しようとする課題】本発明は、上記の欠点
を解消するためになされたものであり、その目的とする
ところは、発光素子の波長が所望の波長に変換され、変
換光の集光効率が向上することができ、また発光装置の
混色を防止できる上に、波長変換材料の使用量を少なく
しコストを抑えた安価な発光素子の発光の異なる波長に
変換する半導体発光装置(LED)を提供するものであ
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks, and an object of the present invention is to convert the wavelength of a light-emitting element into a desired wavelength and to collect the converted light. A semiconductor light emitting device (LED) that can improve the light efficiency, prevent color mixing of the light emitting device, and reduce the amount of the wavelength conversion material used to reduce the cost to convert the light emission of an inexpensive light emitting element to a different wavelength of light emission. ).
【0009】本発明の他の目的は、樹脂封止体によるレ
ンズの機能が損なわれることがなく、また均一な色調の
白色を得ることができる半導体発光装置を提供すること
にある。Another object of the present invention is to provide a semiconductor light emitting device capable of obtaining a white color having a uniform color tone without impairing the function of a lens by a resin sealing body.
【0010】[0010]
【課題を解決するための手段】請求項1記載の発明は、
半導体発光素子を収容して載置するカップと、該カップ
内に載置された半導体発光素子を封止する一次樹脂封止
体と、該一次樹脂封止体を封止しレンズ機能を有する二
次樹脂封止体と、を有する半導体発光装置であって、該
一次樹脂封止体の表面または表面近傍に、半導体発光素
子の発光波長を他の波長に変換する波長変換材料層が設
けられており、そのことにより上記目的が達成される。According to the first aspect of the present invention,
A cup for housing and mounting the semiconductor light emitting element, a primary resin sealing body for sealing the semiconductor light emitting element mounted in the cup, and a lens having a lens function for sealing the primary resin sealing body. A semiconductor light-emitting device comprising: a first resin-sealed body; and a surface or near the surface of the primary resin-sealed body, provided with a wavelength conversion material layer for converting the emission wavelength of the semiconductor light-emitting element to another wavelength. Therefore, the above object is achieved.
【0011】一つの実施態様においては、前記波長変換
材料層が、蛍光物質と樹脂と増粘剤を含有する樹脂組成
物を一次樹脂封止体表面に塗布することにより形成され
ている。In one embodiment, the wavelength conversion material layer is formed by applying a resin composition containing a fluorescent substance, a resin and a thickener to the surface of a primary resin sealing body.
【0012】一つの実施態様においては、前記波長変換
材料層が、真空蒸着によって蛍光物質を一次樹脂封止体
の表面に設けることにより形成されている。In one embodiment, the wavelength conversion material layer is formed by providing a fluorescent substance on the surface of a primary resin sealing body by vacuum evaporation.
【0013】一つの実施態様においては、前記一次樹脂
封止体が、蛍光物質と樹脂とを含む樹脂組成物を前記カ
ップ内に充填した後、該カップの開口側を下側にした状
態で樹脂組成物を硬化させることにより形成されてい
る。In one embodiment, after the primary resin sealing body is filled with a resin composition containing a fluorescent substance and a resin in the cup, the resin is placed in a state where the opening side of the cup is on the lower side. It is formed by curing the composition.
【0014】一つの実施態様においては、前記一次樹脂
封止体が、蛍光物質と、樹脂と、蛍光物質を表面に付着
したマイクロバルーンと、増粘剤を含有する樹脂組成物
を、前記カップ内に充填して硬化させることにより形成
されている。In one embodiment, the primary resin encapsulant comprises a resin composition containing a fluorescent substance, a resin, microballoons having the fluorescent substance adhered to a surface thereof, and a thickener. And cured by filling.
【0015】請求項2記載の発明は、半導体発光素子を
収容して載置するカップと、該カップ内に載置された半
導体発光素子を封止する一次樹脂封止体と、該一次樹脂
封止体を封止しレンズ機能を有する二次樹脂封止体と、
を有する半導体発光装置の製造方法であって、樹脂と、
蛍光物質を表面に付着したマイクロバルーンを含有する
樹脂組成物を、前記カップ内に充填して硬化させること
により該一次樹脂封止体を形成する工程、を包含し、そ
のことにより上記目的が達成される。According to a second aspect of the present invention, there is provided a cup for housing and mounting a semiconductor light emitting element, a primary resin sealing body for sealing the semiconductor light emitting element mounted in the cup, and a primary resin sealing body. A secondary resin sealing body that seals the stopper and has a lens function,
A method for manufacturing a semiconductor light emitting device having:
Filling the resin composition containing a microballoon having a fluorescent substance attached to its surface into the cup and curing the cup to form the primary resin sealing body, thereby achieving the above object. Is done.
【0016】本発明の作用は以下の通りである。The operation of the present invention is as follows.
【0017】本発明の半導体発光装置は、カップ内部に
充填する一次樹脂封止体内には波長変換材料は含有され
ず、その表面又は表面近傍にのみ波長変換材料の層が形
成され、その一次樹脂封止体を包囲する形の二次樹脂封
止体が設けられている。In the semiconductor light emitting device of the present invention, the wavelength conversion material is not contained in the primary resin encapsulant filling the inside of the cup, and a layer of the wavelength conversion material is formed only on or near the surface thereof. A secondary resin sealing body surrounding the sealing body is provided.
【0018】従って、半導体発光素子を封止した一次樹
脂封止体の表面または表面近傍に波長交換材料の層を形
成したことにより、波長を所望とする波長に変換するこ
とができ、しかも点光源の半導体発光素子からでた光束
を樹脂で構成したレンズ(二次樹脂封止体)によって集
光することができる。Therefore, the wavelength can be converted into a desired wavelength by forming the layer of the wavelength exchange material on or near the surface of the primary resin sealing body in which the semiconductor light emitting element is sealed. The light flux emitted from the semiconductor light emitting element can be collected by a lens (secondary resin sealing body) made of resin.
【0019】一次充填用樹脂封止体の表面又は表面近傍
にのみ波長変換材料層を形成することで、波長変換材料
の使用量を少なくし、コストを抑えることができる。By forming the wavelength conversion material layer only on or near the surface of the resin sealing body for primary filling, the amount of the wavelength conversion material used can be reduced and the cost can be reduced.
【0020】また、樹脂と、蛍光物質を表面に付着した
マイクロバルーンを含有する樹脂組成物をカップ内に充
填して硬化させることにより、蛍光物質を均一に一次樹
脂封止体内に分散させることができる。Further, by filling a resin and a resin composition containing a microballoon having a fluorescent substance adhered to its surface into a cup and curing the cup, the fluorescent substance can be uniformly dispersed in the primary resin sealing body. it can.
【0021】[0021]
【発明の実施の形態】以下に本発明を図面を参照して説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.
【0022】図1は本発明の一実施例に係る半導体発光
装置の模式図である。この半導体発光装置は、一端に皿
状の反射カップ10を備えた第1のリードフレーム11
と、一端に細線接続部を備えた第2のリードフレーム1
2と、該カップ10上に固着された化合物半導体からな
る半導体発光素子2と、該半導体発光素子2に形成され
た電極と細線接続部との間を電気的に接続する導電性ワ
イヤ13と、該カップ10内に充填され半導体発光素子
2を封止する一次樹脂封止体3と、該一次樹脂封止体3
及び第1のリードフレーム11、第2のリードフレーム
12の一端を封止する二次樹脂封止体6を有する。FIG. 1 is a schematic view of a semiconductor light emitting device according to one embodiment of the present invention. This semiconductor light emitting device has a first lead frame 11 having a dish-shaped reflection cup 10 at one end.
Lead frame 1 having a thin wire connection portion at one end
2, a semiconductor light emitting device 2 made of a compound semiconductor fixed on the cup 10, a conductive wire 13 for electrically connecting an electrode formed on the semiconductor light emitting device 2 and a fine wire connection portion, A primary resin sealing body 3 filled in the cup 10 to seal the semiconductor light emitting element 2;
And a secondary resin sealing body 6 for sealing one ends of the first lead frame 11 and the second lead frame 12.
【0023】上記半導体発光素子2は、第1のリードフ
レーム11に導電性ペーストでダイボンドされ、第2の
リードフレーム12に対して導電性ワイヤ13でワイヤ
ボンドされている。The semiconductor light emitting device 2 is die-bonded to a first lead frame 11 with a conductive paste, and wire-bonded to a second lead frame 12 with a conductive wire 13.
【0024】上記一次樹脂封止体3はエポキシ樹脂等の
透光性樹脂を硬化させることにより形成され、該一次樹
脂封止体3の表面または表面近傍に半導体発光素子2の
発光波長を他の波長に変換する波長変換材料層4が設け
られている。The primary resin encapsulant 3 is formed by curing a translucent resin such as an epoxy resin, and the light emission wavelength of the semiconductor light emitting element 2 is set on or near the surface of the primary resin encapsulant 3. A wavelength conversion material layer 4 for converting to a wavelength is provided.
【0025】この波長変換材料層4は、蛍光物質と樹脂
と増粘剤を混合した溶液状の樹脂組成物を一次樹脂封止
体3の表面に塗布して硬化させることにより形成されて
いる。This wavelength conversion material layer 4 is formed by applying a resin composition in the form of a mixture of a fluorescent substance, a resin and a thickener on the surface of the primary resin sealing body 3 and curing the resin composition.
【0026】樹脂組成物を一次樹脂封止体3の表面に塗
布する方法としては、公知の塗布方法が採用できる。As a method of applying the resin composition to the surface of the primary resin sealing body 3, a known application method can be adopted.
【0027】上記波長変換材料としては、例えば、蛍光
染料、蛍光顔料等、半導体発光素子2の発光波長を他の
波長に変換できるものであれば公知の材料を使用するこ
とができる。例えば、基体、付活体及び融剤よりなる蛍
光物質がある。基体としては、亜鉛、カドミウム、マグ
ネシウム、シリコン、イットリウム等の希土類元素等の
酸化物、硫化物、珪酸塩、バナジン酸塩等の無機蛍光物
質又はフルオレセイン、エオシン、油類(鉱物油)等の
有機蛍光物質があげられる。付活体としては、銀、銅、
マンガン、クロム、ユウロビウム、亜鉛、アルミニウ
ム、鉛、リン、砒素、金等があげられる。融剤は、塩化
ナトリウム、塩化カリウム、炭酸マグネシウム、塩化バ
リウム等があげられる。波長変換材料の添加量は、典型
的には樹脂組成物に対して0.001〜数%程度の微量
が用いられる。As the wavelength conversion material, known materials such as fluorescent dyes and fluorescent pigments can be used as long as they can convert the emission wavelength of the semiconductor light emitting element 2 to another wavelength. For example, there is a fluorescent substance composed of a substrate, an activator and a flux. As the substrate, an inorganic fluorescent substance such as an oxide such as a rare earth element such as zinc, cadmium, magnesium, silicon, or yttrium, a sulfide, a silicate, or a vanadate; Fluorescent substances. Activators include silver, copper,
Manganese, chromium, eurobium, zinc, aluminum, lead, phosphorus, arsenic, gold and the like can be mentioned. Examples of the flux include sodium chloride, potassium chloride, magnesium carbonate, barium chloride and the like. The addition amount of the wavelength conversion material is typically a very small amount of about 0.001 to several percent based on the resin composition.
【0028】上記半導体発光素子2は、従来公知の各色
を発光する素子が使用される。例えば、GaAlP系、
GaP系、GaN系の半導体発光素子2を使用すれば、
発光色はそれぞれ赤色、緑色、青色となる。また、Ga
As系の半導体発光素子2を使用すれば、赤外発光装置
が得られる。As the semiconductor light emitting element 2, a conventionally known element that emits each color is used. For example, GaAlP-based,
If a GaP-based or GaN-based semiconductor light emitting device 2 is used,
The emission colors are red, green, and blue, respectively. Also, Ga
If the As-based semiconductor light emitting element 2 is used, an infrared light emitting device can be obtained.
【0029】一次樹脂封止体3を構成する樹脂と二次樹
脂封止体6を構成する樹脂は同一でもよく、あるいは異
なっていてもよい。一次樹脂封止体3と二次樹脂封止体
6とを異なる樹脂で形成する場合には、一次樹脂封止体
3、二次樹脂封止体6の屈折率を順に小さくして空気の
屈折率に近くなるように設定することが好ましい。また
一次樹脂封止体3には半導体発光素子2の屈折率より小
さい材料が好ましく用いられる。The resin forming the primary resin sealing body 3 and the resin forming the secondary resin sealing body 6 may be the same or different. When the primary resin sealing member 3 and the secondary resin sealing member 6 are formed of different resins, the refractive indices of the primary resin sealing member 3 and the secondary resin sealing member 6 are sequentially reduced to refract air. It is preferable to set so as to be close to the rate. A material having a refractive index smaller than that of the semiconductor light emitting element 2 is preferably used for the primary resin sealing body 3.
【0030】上記構成の半導体発光装置を作製するに
は、以下のように行うことができる。The fabrication of the semiconductor light emitting device having the above structure can be performed as follows.
【0031】上記カップ10内に予めプレディップによ
り一次充填用樹脂を満たした後、パウダー状の波長変換
材料を吹き付け、一次充填用樹脂で形成される一次樹脂
封止体3の表面に波長変換材料層4を形成する。波長変
換材料層4を形成した後、樹脂を硬化させる。次に、一
次樹脂封止体3を包囲するように二次充填用樹脂を充填
してレンズ機能を有する二次樹脂封止体6を形成する。After the cup 10 is previously filled with a primary filling resin by pre-dipping, a powdery wavelength converting material is sprayed, and the wavelength converting material is applied to the surface of the primary resin sealing body 3 formed of the primary filling resin. The layer 4 is formed. After forming the wavelength conversion material layer 4, the resin is cured. Next, a resin for secondary filling is filled so as to surround the primary resin sealing body 3 to form a secondary resin sealing body 6 having a lens function.
【0032】このようにして得られた半導体発光装置
は、点光源の半導体発光素子2からでた光束を、樹脂で
構成したレンズ形状の二次樹脂封止体6によって集光す
ることができ、しかもこのような特性を損なうことな
く、半導体発光素子2を封止した一次樹脂封止体3の表
面または表面近傍に波長交換材料層6を形成して波長を
所望とする波長に変換することができる。従って、均一
な色調の白色を得ることもできる。In the semiconductor light emitting device thus obtained, the light flux emitted from the semiconductor light emitting element 2 as a point light source can be condensed by the lens-shaped secondary resin sealing body 6 made of resin. Moreover, it is possible to form the wavelength exchange material layer 6 on or near the surface of the primary resin sealing body 3 in which the semiconductor light emitting element 2 is sealed and convert the wavelength to a desired wavelength without impairing such characteristics. it can. Therefore, white with a uniform color tone can be obtained.
【0033】図2は別の実施形態を示すものである。反
射カップ10内に予めプレディップにより一次充填用樹
脂を満たすまでは、図1に示した実施形態の場合と同様
である。一旦、一次充填用樹脂を硬化し、次に波長変換
材料を含有した樹脂をプレディップ(浸漬して塗布)に
より一次樹脂封止体3の表面に波長交換材料層5を形成
し再度硬化を行う。FIG. 2 shows another embodiment. Until the reflection cup 10 is filled with the primary filling resin by pre-dipping in advance, it is the same as in the embodiment shown in FIG. The resin for primary filling is once cured, and then the resin containing the wavelength conversion material is pre-dip (dipped and applied) to form a wavelength exchange material layer 5 on the surface of the primary resin sealing body 3 and cured again. .
【0034】その後は、二次充填用樹脂で必要とするレ
ンズ形状の二次樹脂封止体6を形成し、半導体発光装置
を作製する。Thereafter, a secondary resin sealing body 6 having a lens shape required by the secondary filling resin is formed, and a semiconductor light emitting device is manufactured.
【0035】いずれの場合においても、一次樹脂封止体
3と二次樹脂封止体6との間には波長変換材料層4が形
成され、半導体発光素子2の発光波長を異なる波長に変
換することができる。In any case, a wavelength conversion material layer 4 is formed between the primary resin sealing member 3 and the secondary resin sealing member 6, and converts the emission wavelength of the semiconductor light emitting element 2 to a different wavelength. be able to.
【0036】また、波長変換材料を一次樹脂封止体3表
面あるいは表面近傍に均一に設けるために、波長変換材
料と樹脂と増粘剤を混合した樹脂組成物を用いて、この
ものを一次樹脂封止体3表面に塗布してもよい。増粘剤
としては、例えば、シリコン系増粘剤等の公知のものが
使用される。増粘剤を混合することにより、波長変換材
料の樹脂組成物中での分散性がよくなる。In order to uniformly provide the wavelength conversion material on the surface of the primary resin sealing body 3 or near the surface, a resin composition obtained by mixing a wavelength conversion material, a resin and a thickener is used. It may be applied to the surface of the sealing body 3. As the thickener, for example, a known thickener such as a silicon-based thickener is used. By mixing the thickener, the dispersibility of the wavelength conversion material in the resin composition is improved.
【0037】また、図3に示すように、真空蒸着によっ
て蛍光物質を一次樹脂封止体3の表面に付着させること
により波長変換材料層4を形成してもよい。Further, as shown in FIG. 3, the wavelength conversion material layer 4 may be formed by attaching a fluorescent substance to the surface of the primary resin sealing body 3 by vacuum evaporation.
【0038】また、図4に示すように、蛍光物質と樹脂
とを含む樹脂組成物を前記カップ10内部に充填した
後、該カップ10の開口側を下側にした状態で樹脂組成
物を硬化させることにより波長変換材料層4を形成して
もよい。すなわち、波長変換材料は、樹脂に比べて比重
が大きいために、カップ10に充填された一次樹脂封止
体3の表面側(下方側)に波長変換材料が堆積して硬化
することになり、従って、一次樹脂封止体3の表面に波
長変換材料層4が形成され、該封止体3の底部(カップ
10の底面側)には透明樹脂部分が形成される。この場
合にも増粘剤を樹脂組成物に添加してもよい。As shown in FIG. 4, after filling the inside of the cup 10 with a resin composition containing a fluorescent substance and a resin, the resin composition is cured with the opening side of the cup 10 facing downward. By doing so, the wavelength conversion material layer 4 may be formed. That is, since the specific gravity of the wavelength conversion material is greater than that of the resin, the wavelength conversion material is deposited and hardened on the surface side (lower side) of the primary resin sealing body 3 filled in the cup 10, and Therefore, the wavelength conversion material layer 4 is formed on the surface of the primary resin sealing body 3, and a transparent resin portion is formed on the bottom of the sealing body 3 (on the bottom side of the cup 10). Also in this case, a thickener may be added to the resin composition.
【0039】さらに、蛍光物質と、樹脂と、蛍光物質が
表面に付着したマイクロバルーンと、増粘剤を含有する
樹脂組成物を、カップ10内に充填して硬化させること
により一次樹脂封止体3を形成してもよい。この場合に
は、マイクロバルーンに付着した半導体変換材料は、一
次樹脂封止体3の表面側に移りやすく、波長変換材料単
体は該封止体の底部側へ移行しやすいために、一次樹脂
封止体3全体としては波長変換材料が均一に分散される
ことになる。Further, a resin composition containing a fluorescent substance, a resin, a microballoon having the fluorescent substance adhered to the surface thereof, and a thickener is filled in the cup 10 and cured to form a primary resin sealing body. 3 may be formed. In this case, the semiconductor conversion material adhering to the microballoon tends to migrate to the surface side of the primary resin sealing body 3 and the wavelength conversion material alone easily migrates to the bottom side of the sealing body. As a whole, the wavelength conversion material is uniformly dispersed in the stop body 3.
【0040】なお、複数種の波長変換材料を樹脂組成物
に添加混合してもよく、またそのうち一方をマイクロバ
ルーンに付着させた状態で樹脂組成物に混入してもよ
い。例えば、青色を発する半導体発光素子2を用い、緑
色に変換する材料の層と、赤色に変換する材料の層とを
一次樹脂封止体3の表面側に設けることにより、白色の
光を発光することができる。A plurality of wavelength converting materials may be added to and mixed with the resin composition, or one of them may be mixed with the resin composition in a state where one of them is attached to the microballoon. For example, white light is emitted by using a semiconductor light emitting element 2 that emits blue light and providing a layer of a material that converts to green and a layer of a material that converts to red on the surface side of the primary resin sealing body 3. be able to.
【0041】[0041]
【発明の効果】本発明によれば、カップおよび二次樹脂
封止体のレンズの形状等によって所望の光指向性が得ら
れ、波長変換に伴う輝度の低下を最小限に抑制すること
ができる。According to the present invention, desired light directivity can be obtained by the shape of the lens of the cup and the secondary resin sealing body, and a decrease in luminance due to wavelength conversion can be suppressed to a minimum. .
【0042】また、発光素子の波長が所望の波長に変換
され、変換光の集光効率が向上し、さらに発光装置の混
色を防止できる上に、波長変換材料の使用量を少なくし
コストを抑えた安価な発光素子の発光の異なる波長に変
換する発光装置を提供することができる。さらに、樹脂
封止体によるレンズの機能が損なわれることがなく、ま
た均一な色調の白色を得ることができる半導体発光装置
を提供することができる。Further, the wavelength of the light emitting element is converted to a desired wavelength, the efficiency of condensing the converted light is improved, the color mixing of the light emitting device can be prevented, and the amount of the wavelength converting material used is reduced to reduce the cost. It is possible to provide a light emitting device that converts light emission of an inexpensive light emitting element into different wavelengths. Further, it is possible to provide a semiconductor light emitting device capable of obtaining a uniform white color without impairing the function of the lens by the resin sealing body.
【図1】本発明の半導体発光装置の一実施形態の製造方
法を示す模式図である。FIG. 1 is a schematic view illustrating a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
【図2】本発明の半導体発光装置の他の実施形態の製造
方法を示す模式図である。FIG. 2 is a schematic view illustrating a method for manufacturing a semiconductor light emitting device according to another embodiment of the present invention.
【図3】本発明の半導体発光装置のさらに他の一実施形
態の模式図である。FIG. 3 is a schematic view of still another embodiment of the semiconductor light emitting device of the present invention.
【図4】本発明の半導体発光装置のさらに他の実施形態
の製造方法を示す模式図である。FIG. 4 is a schematic view illustrating a method for manufacturing a semiconductor light emitting device according to still another embodiment of the present invention.
【図5】従来の半導体発光装置の模式図である。FIG. 5 is a schematic view of a conventional semiconductor light emitting device.
2 半導体発光素子 3 一次樹脂封止体 4 波長変換材料層 6 二次樹脂封止体 10 カップ 11 第1のリードフレーム 12 第2のリードフレーム Reference Signs List 2 semiconductor light emitting element 3 primary resin sealing member 4 wavelength conversion material layer 6 secondary resin sealing member 10 cup 11 first lead frame 12 second lead frame
Claims (6)
プと、該カップ内に載置された半導体発光素子を封止す
る一次樹脂封止体と、該一次樹脂封止体を封止しレンズ
機能を有する二次樹脂封止体と、を有する半導体発光装
置であって、 該一次樹脂封止体の表面または表面近傍に、半導体発光
素子の発光波長を他の波長に変換する波長変換材料層が
設けられている半導体発光装置。1. A cup for housing and mounting a semiconductor light emitting element, a primary resin sealing body for sealing the semiconductor light emitting element mounted in the cup, and sealing the primary resin sealing body. A secondary resin sealing body having a lens function, comprising: a wavelength conversion material for converting the emission wavelength of the semiconductor light emitting element to another wavelength on or near the surface of the primary resin sealing body. A semiconductor light emitting device provided with a layer.
と増粘剤を含有する樹脂組成物を一次樹脂封止体表面に
塗布することにより形成されている請求項1に記載の半
導体発光装置。2. The semiconductor light emitting device according to claim 1, wherein the wavelength conversion material layer is formed by applying a resin composition containing a fluorescent substance, a resin, and a thickener to the surface of the primary resin sealing body. apparatus.
て蛍光物質を一次樹脂封止体の表面に設けることにより
形成されている請求項1に記載の半導体発光装置。3. The semiconductor light emitting device according to claim 1, wherein the wavelength conversion material layer is formed by providing a fluorescent substance on a surface of the primary resin sealing body by vacuum evaporation.
とを含む樹脂組成物を前記カップ内に充填した後、該カ
ップの開口側を下側にした状態で樹脂組成物を硬化させ
ることにより形成されている請求項1に記載の半導体発
光装置。4. The primary resin encapsulant fills the cup with a resin composition containing a fluorescent substance and a resin, and then cures the resin composition with the opening side of the cup facing down. The semiconductor light emitting device according to claim 1, wherein the device is formed by:
脂と、蛍光物質を表面に付着したマイクロバルーンと、
増粘剤を含有する樹脂組成物を、前記カップ内に充填し
て硬化させることにより形成されている請求項1に記載
の半導体発光装置。5. The method according to claim 1, wherein the primary resin sealing body includes a fluorescent substance, a resin, and a microballoon having the fluorescent substance adhered to a surface thereof.
2. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed by filling a resin composition containing a thickener into the cup and curing the cup.
プと、該カップ内に載置された半導体発光素子を封止す
る一次樹脂封止体と、該一次樹脂封止体を封止しレンズ
機能を有する二次樹脂封止体と、を有する半導体発光装
置の製造方法であって、 樹脂と、蛍光物質を表面に付着したマイクロバルーンを
含有する樹脂組成物を、前記カップ内に充填して硬化さ
せることにより該一次樹脂封止体を形成する工程、を包
含する半導体発光装置の製造方法。6. A cup for accommodating and mounting a semiconductor light emitting element, a primary resin sealing body for sealing the semiconductor light emitting element mounted in the cup, and sealing the primary resin sealing body. A method of manufacturing a semiconductor light emitting device having a secondary resin sealing body having a lens function, wherein a resin and a resin composition containing a microballoon having a fluorescent substance adhered to the surface thereof are filled in the cup. Forming the primary resin sealing body by curing the semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02919299A JP3470949B2 (en) | 1999-02-05 | 1999-02-05 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02919299A JP3470949B2 (en) | 1999-02-05 | 1999-02-05 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000228544A true JP2000228544A (en) | 2000-08-15 |
| JP3470949B2 JP3470949B2 (en) | 2003-11-25 |
Family
ID=12269346
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02919299A Expired - Lifetime JP3470949B2 (en) | 1999-02-05 | 1999-02-05 | Semiconductor light emitting device |
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| Country | Link |
|---|---|
| JP (1) | JP3470949B2 (en) |
Cited By (7)
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|---|---|---|---|---|
| WO2003021691A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
| JP2005277127A (en) * | 2004-03-25 | 2005-10-06 | Stanley Electric Co Ltd | Light emitting device |
| JP2005294484A (en) * | 2004-03-31 | 2005-10-20 | Stanley Electric Co Ltd | Semiconductor light emitting device and manufacturing method |
| JP2007027801A (en) * | 2006-11-01 | 2007-02-01 | Sanyo Electric Co Ltd | LED display and manufacturing method thereof |
| CN100389502C (en) * | 2002-07-12 | 2008-05-21 | 斯坦雷电气株式会社 | led |
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| US7023019B2 (en) | 2001-09-03 | 2006-04-04 | Matsushita Electric Industrial Co., Ltd. | Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device |
| WO2003021691A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
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| US7629620B2 (en) | 2001-09-03 | 2009-12-08 | Panasonic Corporation | Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device |
| US7772769B2 (en) | 2001-09-03 | 2010-08-10 | Panasonic Corporation | Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device |
| USRE47453E1 (en) | 2001-09-03 | 2019-06-25 | Panasonic Corporation | Luminescent layer and light-emitting semiconductor device |
| CN100389502C (en) * | 2002-07-12 | 2008-05-21 | 斯坦雷电气株式会社 | led |
| DE102005012921B4 (en) | 2004-03-22 | 2019-06-19 | Stanley Electric Co. Ltd. | Method for producing a semiconductor light emitting device |
| JP2005277127A (en) * | 2004-03-25 | 2005-10-06 | Stanley Electric Co Ltd | Light emitting device |
| JP2005294484A (en) * | 2004-03-31 | 2005-10-20 | Stanley Electric Co Ltd | Semiconductor light emitting device and manufacturing method |
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