JP2000215989A - Organic el display device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a reliable organic EL display device having a large luminescent area ratio, allowing use of a large-size substrate, allowing arrangement and manufacture of a large number of displays in one substrate, and allowing utilization of a marketed substrate to reduce a production cost, and to provide its manufacture. SOLUTION: This organic EL display device has a first electrode 2 on an insulator, a single layer or plural layers of organic layers 5 at least a part of which has a luminescent function, second electrodes 6, and an element isolation structure body for electrically isolating the second electrodes 6 adjacent to each other. The element isolation structure body has at least a cubic structure such that an upper part of the element insulation structure body is formed with a groove structure. The groove structure electrically isolates the second electrodes 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an organic electroluminescence display (hereinafter, abbreviated as an organic EL display) used as a display device and a light source, and a method of manufacturing the same.

[0002]

2. Description of the Related Art A display device using an organic EL element is:
It has the following advantages over liquid crystal displays, which are currently the mainstream flat panel displays. 1) Wide viewing angle due to self-emission. 2) A display with a thickness of 2-3 mm can be easily manufactured. 3) Natural emission color because no polarizing plate is used. 4) The display is clear and vivid because the dynamic range of light and dark is wide. 5) Operates over a wide temperature range. 6) Since the response speed is three orders of magnitude faster than liquid crystal, moving images can be displayed easily. Despite these advantages, they did not readily reach the market. This is for the following reasons.

[0003] In general, an organic EL device is roughly described as follows.
It is composed of a stack of thin films having three separate functions: an electrode made of a “transparent conductive film”, an “organic layer including a light emitting layer”, and an electrode made of a “metal or alloy having a small work function”. These "organic layers containing the light-emitting layer" and "metals or alloys having a low work function" are easily degraded by moisture and oxygen, and the "organic layer containing the light-emitting layer" is easily soluble in a solvent and weak to heat. Had manufacturing difficulties. In other words, in a method using water, an organic solvent, and heat, it is difficult to separate and divide an element after forming an “organic layer including a light-emitting layer” and a “metal or alloy having a small work function”. is there. That is, when an organic EL display device of a class equivalent to a display currently realized by liquid crystal is to be manufactured, a mature semiconductor manufacturing technology or a liquid crystal display manufacturing technology cannot be applied as it is.

Therefore, the following techniques have been devised which enable the separation of the second electrode without exposure to the air, and according to the techniques, a highly reliable organic EL is disclosed. Manufacturing of displays became possible.

For example, JP-A-5-275172 and JP-A-5-258859, US Pat.
Nos. 0 and 5294869. This is because, for example, as shown in FIG. 48, a partition 43 higher than the thickness of the film 44 constituting the organic EL film is formed between the display line electrodes to be separated, and This method utilizes the fact that the material 41 of the organic EL element is not deposited on the shadowed portion of the partition 43 by vacuum deposition.

However, according to this method, in order to form a light emitting line with a good yield and the same width, the width of a partition 43 called an insulating strip 42 (or a pedestal) as shown in FIG. A wide insulator 42 had to be formed below the partition 43. This is because, in the vacuum film forming method, the presence of the barrier ribs 43 hinders film deposition near the barrier ribs 43. Therefore, in the structure without the insulating strip 42, the first electrode and the second electrode 43 near the barrier ribs 43 where the organic film becomes thinner. This is because, in some cases, the electrodes are short-circuited, and the yield is extremely poor particularly on a large substrate in which it is difficult to improve the film thickness uniformity of the organic film.

Conversely, when the insulating strip 42 is formed for the purpose of increasing the yield, the width of the light emitting line is limited by the area where the insulating strip 42 is formed. The width of the insulating strip 42 is designed according to the angle between the metal deposition source 31 and the substrate 33 and the size of the substrate 33 itself, for example, as shown in FIG. That is, as shown in FIG. 49, for example, as shown in FIG. 49, when the width of the insulating strip 42 is small, the angle A between the metal flying from the metal deposition source 31 to the substrate 33 and the partition 43 becomes small, as shown in FIG. In the position B where the angle between the metal flying from the metal evaporation source 31 to the substrate 33 and the partition 43 is large, as shown in FIG. This causes a problem that the light emitting area becomes narrow, and the width of the light emitting line changes depending on the position of the substrate 33. Therefore, in order to make the widths of the light emitting lines uniform over the entire area of the substrate, it is necessary to increase the width of the insulating strip with a margin. Further, the margin for positioning the insulating strip and the partition wall is required to be at least 3 μm to 5 μm when a display device is manufactured on a large-sized substrate by using a one-shot exposure type exposure apparatus. However, it is clear that widening the insulating strip is nothing but a reduction in the light emitting area, and is disadvantageous for a bright display.

Another method is disclosed in Japanese Patent Application Laid-Open No. H8-2629.
No. 98, No. 8-264828, a method of forming a light emitting element in a cavity structure, a trench structure, and a well structure in those structures and separating the light emitting elements from each other. It is clear that similar disadvantages arise.

Further, as disclosed in JP-A-8-315981, JP-A-9-283280, and JP-A-9-161969, an inverted tapered structure or an overhang structure is formed on an electrode.
Even in the method of forming an insulating wall having an undercut structure, an insulating strip is actually required similarly in consideration of forming a light-emitting line having a high yield and the same width.

On the other hand, as one of the failure modes of the organic EL element, there is a phenomenon that a non-light emitting point (dark spot) is generated on the light emitting surface.
The sputtering method is effective as a method for forming the electrode. This seems to be due to the fact that the low defect density and good adhesion of the film formed by the sputtering method effectively prevent water, oxygen, an organic solvent and the like from entering. However, the sputtering method is a method having relatively good step coverage, and the method using the above-described partition walls cannot separate the second electrodes.

Similarly, it is difficult to obtain a high yield of the inverted Taber structure disclosed in JP-A-8-315981 and JP-A-9-283280 as long as the sputtering method is used.

[0012] In the case where the sputtering method is used, a method for electrically separating the adjacent second electrodes with a high yield is disclosed in JP-A-8-315981 and JP-A-9-191.
An element isolation structure having a T-shaped overhang structure substantially parallel to the base and the substrate on the electrode as described in Japanese Patent Application Laid-Open No. 61969/1997 and Japanese Patent Application Laid-Open No. 9-330792 is suitable. This is because the T-shaped overhang structure has a portion that is completely shadowed in the direction in which the film-forming source material comes.

Although the element isolation structure having a wider width at a position far from the substrate can be formed relatively easily, a sufficient production yield and a sufficient production yield can be clearly expected from the sectional structure. In order to have strength, it is desirable that the pattern width be 20 μm or more when viewed from the top surface of the substrate.

In addition, as in the case of the above-mentioned various partition structures, in consideration of forming a light emitting stripe having a good yield and the same width, an insulating strip is actually required similarly.

[0015]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device having a large ratio of light emitting areas, high reliability, use of a large substrate, and manufacturing by disposing a large number of displays on one substrate. It is an object of the present invention to provide an organic EL display device and a method for manufacturing the same, which can reduce the manufacturing cost by using a commercially available substrate.

[0016]

Means for Solving the Problems A conventionally proposed structure for separating elements such as a partition structure, a cavity structure, a trench structure, a well structure, an inverted taper structure, an overhang structure, and an undercut structure (hereinafter, referred to as a structure). In any case, the element separation structures are located closer to the film forming material source than the positions of the elements where these element separation structures emit light. Therefore, when manufacturing a display device with a high yield, it is necessary to provide a margin having a width approximately equal to the height of the element isolation structure in the insulating strip. However, providing a large margin narrows the light-emitting area, which affects display quality. Reducing the height of the element isolation structure means that it is more likely that the “metal electrode having a small work function” will cover the element isolation structure, which means that it is difficult to isolate the element, and therefore, , The yield decreases.

For example, when a partition having a height of 4 μm and a width of 20 μm is provided, the following is obtained. Since the alignment error between the partition and the insulating strip is about 5 μm when a general batch exposure type exposure apparatus is used, the width of the insulating strip also needs to be 5 μm as a margin. In addition, when the “organic film including the light emitting layer” is incident from a maximum oblique angle of 45 ° with respect to the direction perpendicular to the substrate, a margin equal to at least the height of the partition wall of 4 μm is necessary in consideration of a shadowed portion. . Therefore, the sum of both sides of the partition wall results in the need for an insulating strip having a total width of 38 μm, which is the width of the partition wall and the entire margin.

The gap between adjacent transparent conductive films is 5 μm.
In the case of a high-definition simple matrix display in which pixels are arranged at a pitch of 100 μm, (100−38) × (100−5) ÷ (100 × 10
0) = 0.589, and the effective light emitting area is about 59%.

Eliminating the change in the light emitting area at the substrate position without providing a large margin on the insulating strip,
And if it is possible to obtain a high-strength element isolation structure with a high yield, the light-emitting region can be widened,
As a result, a bright display device can be manufactured.

As an effective method for solving the above problems, the present inventors have proposed an element isolation structure having a groove structure and a method in Japanese Patent Application No. 10-121736. Although this structure and method are very effective for improving display quality, on the other hand, without purchasing a transparent conductive film forming apparatus or color filter forming equipment, it is possible to use a transparent conductive film that is commercially available at a low cost. Sheet glass with membrane ", or
"Glass with laminated color filter and transparent conductive film"
There is a problem that it is difficult to use a method of manufacturing an organic EL display panel using such a substrate member.

That is, in order to produce a simple matrix drive type light-emitting panel having an element isolation structure disclosed in Japanese Patent Application No. 10-121736, a groove must be formed before a transparent conductive film is formed, or a material for forming the groove. It is preferable that an auxiliary wiring is formed beforehand underneath. Otherwise, "After patterning the transparent conductive film in an island shape, forming a groove, forming a conductive film to be an auxiliary wiring on the transparent conductive film, patterning the auxiliary wiring across the groove, and forming a transparent conductive film Connect the membrane islands ". However, this method requires an auxiliary wiring forming process, which tends to increase the cost, and reduces the meaning of using an inexpensive substrate. In addition, a substrate on which a color filter and a transparent conductive film are laminated is generally
Since the transparent conductive film is laminated on the resin material, the resin is exposed when the groove is cut. Metal formed as an auxiliary wiring has very poor adhesion to a resin, and often peels off after going through various manufacturing processes. Therefore, a step of forming an insulating film such as SiO ₂ having relatively good adhesion to the resin on the resin layer and exposing the transparent conductive film again is required, which also increases the cost.

That is, the above object is achieved by the following constitution. (1) On a insulator, a first electrode, a single layer or a plurality of organic layers at least a part of which has a light emitting function, a plurality of second electrodes, and a second electrode adjacent to each other are electrically connected. An element isolation structure for electrically isolating, wherein the element isolation structure is at least a three-dimensional structure, and a groove structure is formed thereon, and the second electrode is formed by the groove structure. An organic EL display device in which is electrically separated. (2) The organic EL display according to (1), wherein the element isolation structure has a height higher than the total thickness of the organic layer and the second electrode. (3) The organic EL display device according to (1) or (2), wherein the element isolation structure is substantially trapezoidal or semicylindrical. (4) The organic EL according to any one of (1) to (3) above, wherein the groove of the element isolation structure has an overhang structure.
Display device. (5) The organic EL display device according to any one of (1) to (4), wherein an angle at which an end of the element isolation structure contacts the first electrode is 45 degrees or less. (6) The organic EL display device according to any one of (1) to (5), wherein at least a portion of the element isolation structure that is in contact with the first electrode is an insulator. (7) At least the organic layer and the second electrode formed at a portion where the first electrode and the element isolation structure are in contact with each other are continuously formed as described in (1) to (1).
The organic EL display device according to any one of (6). (8) The organic EL display device according to any one of (1) to (7), wherein a part of the element isolation structure covers at least an end of the first electrode. (9) The organic EL display device according to any one of (1) to (8), wherein constituent materials of the element isolation structure are a photoresist and a polyimide. (10) The organic EL display device according to any one of (1) to (9), wherein the second electrode or the conductive film formed on the second electrode is formed by a sputtering method. (11) a step of forming a first electrode, a step of forming an element isolation structure that is a three-dimensional structure having a groove structure formed thereon, and a single layer or a plurality of layers at least a part of which has a light emitting function Forming an organic layer, and a step of forming a second electrode, wherein the method of forming the second electrode is a step that does not completely cover the groove structure of the element isolation structure. A method for manufacturing an organic EL display device formed by a method having low covering properties.

[0023]

According to the present invention, a trapezoidal or semi-cylindrical structure is provided with a groove as a structure for electrically isolating adjacent light emitting elements, thereby reducing an effective light emitting area. In addition, since it becomes possible to obtain an element isolation structure having a sufficient strength, and it is possible to select a sputtering method as a method for forming a second electrode, an organic EL display device having high reliability can be provided. It has become possible to manufacture with high yield. Furthermore, a substrate in which SiO ₂ and ITO are laminated on a glass substrate which is commercially available for a liquid crystal display, and a substrate in which films such as glass / color filter / overcoat / SiO ₂ / ITO are also laminated are purchased. However, since an organic EL display device can be manufactured using the substrate, the number of manufacturing facilities is reduced, and as a result, a panel can be manufactured at low cost.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The problems described above are caused by the necessity for the positioning accuracy between the insulating strip and the element isolation structure, and the need for a pattern width of 20 μm or more to increase the strength of the element isolation structure. is there.

In the present invention, the problem is solved as follows. The basic principle is that the structure that integrates the insulating strip and the element isolation structure reduces the distance between the second electrodes by the alignment margin and increases the area serving as the base of the overhang portion. And high strength can be obtained.

That is, a three-dimensional structure, preferably a substantially trapezoidal or semi-cylindrical structure is formed in a region separating adjacent elements, and a groove structure is formed above the three-dimensional structure. The object is achieved by separating adjacent second electrodes. In this groove structure, it is preferable that at least a portion in contact with the first electrode be an insulator in order to prevent a short circuit between the first electrode and the second electrode. Further, by adding an eaves structure or an overhang structure to this groove structure, the second electrode is further easily separated, and the yield is improved.

The element isolation structure is a three-dimensional structure, and is preferably a substantially trapezoidal or semi-cylindrical structure. The element isolation structure may have a square cross section, but the above shape is preferable in order to have a taper angle or to increase the strength. It is desirable that the portion of the element isolation structure that is in contact with the first electrode is in contact with a taber angle of 45 degrees or less. By setting the angle to 45 degrees or less, the thickness of the organic film including the light emitting layer formed in the vicinity of the contact portion can be prevented from becoming thin, and current leak and short circuit hardly occur.

The depth of the groove may be larger than the sum of the thickness of the organic layer including the light emitting layer and the thickness of the second electrode. Since the total film thickness does not usually exceed 1 μm, the depth of the groove is 1 μm.
μm or more, and the groove width is 2 μm, twice that
That's enough. Generally, element isolation is possible if the depth of the groove is approximately the same as the total film thickness. In particular,
Usually, width: 1 to 20 μm, especially about 5 to 10 μm, depth: 1/2 to 2 times the total thickness of the organic layer and the second electrode layer
It is about 0 times, especially about 2 to 10 times. The height may be any height as long as the above-mentioned groove structure can be formed and element separation can be surely performed. That is, it is sufficient that the thickness be higher than the sum of the thickness of the organic layer including the light emitting layer and the thickness of the second electrode. Specifically, the thickness is about 1.5 to 20 times, particularly about 2 to 10 times the total thickness of the organic layer and the second electrode layer.

Materials for forming the element isolation structure are as follows:
The material is not particularly limited, and is preferably a material usually used in a manufacturing process of an organic EL device or a material that can be formed by an apparatus used for manufacturing an organic EL device. Further, in order to prevent a short circuit between the first electrode and the second electrode, an insulator is preferable, and at least a portion in contact with the first electrode is preferably an insulator. Specifically, it is desirable that the material be a material whose film thickness can be easily adjusted to the above-mentioned thickness. As such a material, a polyimide resin, a fluorine resin, an acrylic resin,
Resin materials such as olefin resin, SOG (spinonglass)
And the like.

The element isolation structure may be formed separately in a base where the groove structure is formed and an outer cover formed so as to cover the outside of the base. By forming in such a manner, the manufacturing process is facilitated, a continuous manufacturing operation is enabled in the manufacturing process of the organic EL display device, and an eaves structure or an overhang structure is easily formed. .

The overhang structure is a structure that extends in the direction substantially parallel to the substrate near the opening of the groove structure and in the center direction of the groove structure. The overhang structure may be formed in an eaves shape protruding on both sides of the opening of the groove structure, or may be formed on either one. The thickness of the eave-shaped overhang is preferably about 10 nm to 5 μm. Further, the overhang of the eaves is preferably 0.1 to 10
μm, more preferably about 0.3 to 5 μm. If the amount of overhang is shorter than the above range, the effect of separating the element is reduced, and if it is longer than the above range, the mechanical strength is weakened,
It tends to break easily.

As a specific material, the base is preferably made of a resin material such as a polyimide resin, a fluororesin, an acrylic resin, an olefin-based resin or the like, SiO ₂ , SiN _x , Si
Inorganic materials such as ON, Al ₂ O ₃ , SOG (spin on glass) films, or resin materials or inorganic materials and Al, Mo, T
and a structure in which a metal material such as i is laminated. Among these, resin materials such as polyimide resin, acrylic resin and olefin resin are easy to handle and easy to manufacture. The jacket is preferably made of a photosensitive resin such as a photoresist, but is preferably made of SiO ₂ , SiN _x , SiON, Al ₂ O ₃ ,
It is also preferable to form an inorganic material such as an SOG (spin on glass) film by patterning with a resist. Further, the material forming the base may be formed separately into a material forming the groove structure and a base layer formed thereunder.

It is desirable that at least the film in direct contact with the first electrode can be selectively etched with respect to the first electrode or has a high etching rate.

According to this method, the area of the light emitting region is less likely to be reduced due to the height and the alignment margin of the element isolation structure.

As in the above-described example, the gap between the adjacent transparent conductive films is 5 μm, the width of the groove is 5 μm, and the margin for forming the insulating film with respect to the groove is 5 μm on one side of the groove.
Assuming a high-definition simple matrix display in which pixels are arranged at a pitch, (100-25) × (100-5)
÷ (100 × 100) = 0.7125, which indicates that the effective light emitting region is increased by about 12% as compared with the element isolation structure using the partition and the overhang structure.

The display device having the element isolation structure can be manufactured, for example, as follows.

First, as shown in FIGS. 1 and 2, a substrate having a first electrode 2 formed on a substrate 1 is prepared. FIG. 2 is a sectional view taken along the line AA ′ of FIG. As aforementioned,
A substrate on which a transparent conductive film is formed, and a substrate on which a color filter and a transparent conductive film are formed correspond to this. As such a substrate, for example, a substrate commercially available for a liquid crystal display can be used. The first electrode is patterned into a pattern as shown in FIGS. 1 and 2 by using a photolithography method or the like.

Next, as shown in FIGS. 3 and 4, the base 3 is formed at the portion where the groove is to be cut. FIG. 3 is a sectional view taken along the line BB ′ of FIG. The base 3 can be formed using an insulating film.
Alternatively, two or more insulating films made of different materials may be stacked, or a conductive film may be formed over the insulating film. That is, at least a portion in direct contact with the first electrode is an insulating film and can be formed of one or more layers.

Since the base 3 is a portion into which a groove is dug, it is desirable that the base 3 be thicker than the total film thickness of the organic layer and the second electrode. Therefore, it is desirable to form by a method which can be easily thickened. As such a material, a resin material such as a polyimide resin, a fluororesin, an acrylic resin, and an olefin resin, or an SOG (spinonglass) film is suitable. When a plurality of materials are stacked, at least one of them may be a thick film. Further, at least a film which is in direct contact with the first electrode needs to be able to be selectively etched with respect to the first electrode or to have a high etching rate.

These films are also patterned by photolithography.

Further, as shown in FIGS. 5 and 6, a portion of the positive resist 4 where a groove is to be formed is applied to form a pattern. FIG. 6 is a sectional view taken along the line BB ′ of FIG. At this time, the groove is formed so as to be slightly narrower than the width of the base 3. Further, by setting the pattern forming conditions of the positive resist 4 so that the edge of the resist pattern serving as the outer jacket is at an angle of 45 degrees or less with respect to the substrate surface, particularly the first electrode surface, the light emission to be formed later is performed A film such as an organic layer including a layer is continuously formed without causing a break at the boundary between the resist pattern end and the ITO.

By dipping the base 3 in the etching solution for an appropriate period of time, a structure having eaves formed at the edge of the groove was obtained as shown in FIGS. Further, as shown in FIGS. 9 and 10, the pattern of the photomask is designed so as to cover the step portion of the first electrode, so that the first electrode step portion at the first electrode step portion is formed.
A defect in which a leak or a short circuit occurs between the first electrode and the second electrode can be suppressed. 8 and 10,
FIG. 10 is a sectional view taken along arrows BB ′ of FIGS.

After forming the above structure, an organic film including a light emitting layer is formed. Subsequently, a second electrode is formed by a method that cannot completely cover the groove portion. Further, a metal or insulating film which is stable against moisture and oxygen may be laminated thereon as a protective film.

At this time, even if the angle at which the second electrode material enters the substrate is greatly different, the film formation region changes only in the groove, and there is no effect on the actual light emitting region. I understand. That is, even when a display is manufactured using a large-sized substrate, the incident angle of the second electrode is different and the light-emitting region is not reduced as in the conventional example shown in the portions A and B in FIG.

The organic layer including the light emitting layer may be formed by a vacuum film forming method, a spin coating method or a printing method. However, when forming by the spin coating method, it is necessary to design the depth of the groove so that the groove is not completely buried.

In each of the illustrated examples, the element isolation structure is shown to be larger than the pixel portion for the purpose of describing the element isolation structure. However, the pixel portion is usually much larger (hereinafter referred to as the pixel portion). The same applies to the embodiment of the present invention).

Next, the organic EL device constituting the organic EL display device of the present invention will be described. The organic EL device according to the present invention includes, for example, a hole injection electrode such as ITO as a first electrode, one or more organic layers involved in a light emitting function, and an electron injection electrode as a second electrode on a glass substrate. Have. The organic layer may have a configuration including a hole injection transport layer, a light emitting layer, and an electron injection transport layer. Alternatively, the reverse lamination may be adopted.

Further, for example, a first hole injection electrode of ITO or the like, a first hole injection layer, a first light emitting layer, a first electron injection layer, a first electron injection electrode, Are sequentially formed, and a second electron injection layer, a second light emitting layer, a second hole injection layer, and a second hole injection electrode are sequentially formed thereon. A hole injection layer of
A configuration in which a third light-emitting layer, a third electron injection layer, and a second electron injection electrode are sequentially formed may be employed.

Alternatively, a first electron injection electrode, a first electron injection layer, a first light emitting layer, a first hole injection layer, and a first hole injection electrode are sequentially formed on a substrate. Forming a second hole injection layer, a second light emitting layer, a second electron injection layer, and a second electron injection electrode thereon, and further forming a third electron injection layer thereon. , A third light emitting layer, and a third light emitting layer.
And a second hole injection electrode. In this case, the thickness of the electron injection electrode or the like is preferably 100 nm or less in order to secure light transmittance. The structure having the plurality of light-emitting layers is suitable for full-color light emission and white light emission.

The hole injection electrode is usually formed as the first electrode on the substrate side, and is configured to extract emitted light. Therefore, a transparent or translucent electrode is preferable. As the transparent electrode, ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide), ZnO, SnO ₂ , In ₂
O _{3 and the} like can be mentioned, and preferably, ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide)
Is preferred. ITO usually contains In ₂ O ₃ and SnO in a stoichiometric composition, but the amount of O may slightly deviate from this.

The thickness of the hole injecting electrode should be a certain thickness or more that can sufficiently inject holes, and is preferably 1 or more.
The range is preferably from 0 to 500 nm, more preferably from 30 to 300 nm. The upper limit is not particularly limited. However, if the thickness is too large, problems such as peeling, deterioration in workability, damage due to stress, reduction in light transmittance, and leakage due to surface roughness occur. On the other hand, if the thickness is too small, there is a problem in film strength, hole transport ability, and resistance value during production.

The hole injection electrode layer can be formed by a vapor deposition method or the like, but is preferably formed by a sputtering method.

As the electron injection electrode, a substance having a low work function is preferable. For example, K, Li, Na, Mg, La, C
e, Ca, Sr, Ba, Al, Ag, In, Sn, Z
It is preferable to use a single metal element such as n or Zr, or a two-component or three-component alloy system containing them for improving the stability. As an alloy system, for example, Ag · Mg (A
g: 1 to 20 at%), Al.Li (Li: 0.3 to 14)
at%), In.Mg (Mg: 50-80at%), Al.
Ca (Ca: 5 to 20 at%) and the like are preferable. Further, these oxides may be formed in combination with an auxiliary electrode having good electric conductivity. Note that the electron injection electrode can be formed by an evaporation method or a sputtering method.

The thickness of the electron injecting electrode thin film may be a certain thickness or more capable of sufficiently injecting electrons.
Preferably, the thickness may be 1 nm or more. The upper limit is not particularly limited, but the thickness may be generally about 1 to 500 nm. An auxiliary electrode may be further provided on the electron injection electrode.

The thickness of the auxiliary electrode may be a certain thickness or more, preferably 50 nm or more, more preferably 100 nm or more, in order to secure electron injection efficiency and prevent entry of moisture, oxygen or an organic solvent. The range of 100 to 1000 nm is preferred. If the auxiliary electrode layer is too thin, the effect cannot be obtained, and the step coverage of the auxiliary electrode layer is reduced, and the connection with the terminal electrode is not sufficient. on the other hand,
If the auxiliary electrode layer is too thick, the stress of the auxiliary electrode layer increases, so that the dark spot growth rate increases.

The total thickness of the electron injection electrode and the auxiliary electrode is not particularly limited, but is usually 100 to 100.
It may be about 0 nm.

After forming the electrode, in addition to the auxiliary electrode, S
inorganic materials iO _X such as Teflon, a protective film may be formed using an organic material such as fluorocarbon polymers containing chlorine. The protective film may be transparent or opaque, and the thickness of the protective film is about 50 to 1200 nm. The protective film may be formed by a general sputtering method, an evaporation method, a PECVD method, or the like, in addition to the reactive sputtering method.

Further, in order to prevent oxidation of the organic layers and electrodes of the device, it is preferable to dispose a sealing plate on the device. The sealing plate is bonded and sealed using an adhesive resin or the like in order to prevent moisture from entering. The sealing gas is preferably an inert gas such as Ar, He, and N ₂ . Further, the moisture content of the sealing gas is preferably 100 ppm or less, more preferably 10 ppm or less, and particularly preferably 1 ppm or less. Although there is no particular lower limit for the water content, it is usually about 0.1 ppm.

The material of the sealing plate is preferably a flat plate, and may be a transparent or translucent material such as glass, quartz, and resin. Glass is particularly preferred. As such a glass material, an alkali glass is preferable from the viewpoint of cost, and in addition, a glass composition such as soda lime glass, lead alkali glass, borosilicate glass, aluminosilicate glass, and silica glass is also preferable. In particular, soda glass, a glass material without surface treatment can be used at low cost,
preferable. As the sealing plate, other than a glass plate, a metal plate, a plastic plate, or the like can be used.

The height of the sealing plate may be adjusted to a desired height by using a spacer. Examples of the material of the spacer include resin beads, silica beads, glass beads, and glass fibers, and glass beads are particularly preferable. The spacer is usually a granular material having a uniform particle size, but the shape is not particularly limited, and may be various shapes as long as it does not hinder the function as the spacer. As the size, the diameter in terms of a circle is 1 to 20 μm, more preferably 1 to 10 μm, and especially 2 to 20 μm.
8 μm is preferred. Those having such a diameter have a grain length of 10
It is preferably about 0 μm or less, and the lower limit is not particularly limited, but is usually about the same as or larger than the diameter.

When a recess is formed in the sealing plate,
Spacers may or may not be used. The preferred size when used is within the above range,
Particularly, the range of 2 to 8 μm is preferable.

The spacer may be mixed in the sealing adhesive in advance, or may be mixed at the time of bonding. The content of the spacer in the sealing adhesive is preferably 0.01
-30 wt%, more preferably 0.1-5 wt%.

The adhesive is not particularly limited as long as it can maintain stable adhesive strength and has good airtightness, but it is preferable to use a cationic curing type ultraviolet curing epoxy resin adhesive. .

The substrate material is not particularly limited, and can be appropriately determined depending on the material of the electrodes of the organic EL structure to be laminated. For example, a metal material such as Al, or a transparent or transparent material such as glass, quartz, or resin. The material may be translucent or opaque. In this case, in addition to glass, ceramics such as alumina, metal sheets such as stainless steel are subjected to insulation treatment such as surface oxidation, and thermosetting resins such as phenolic resin And a thermoplastic resin such as polycarbonate.

Next, an organic layer provided in the organic EL device will be described. The light emitting layer has a function of injecting holes (holes) and electrons, a function of transporting them, and a function of generating excitons by recombination of holes and electrons. In the light emitting layer,
It is preferable to use a relatively electronically neutral compound.

The hole injecting and transporting layer has a function of facilitating the injection of holes from the hole injecting electrode, a function of stably transporting holes, and a function of preventing electrons.
The electron injection transport layer has a function of facilitating injection of electrons from the electron injection electrode, a function of stably transporting electrons, and a function of preventing holes. These layers increase and confine holes and electrons injected into the light emitting layer, optimize the recombination region, and improve luminous efficiency.

The thickness of the light emitting layer, the thickness of the hole injecting and transporting layer, and the thickness of the electron injecting and transporting layer are not particularly limited, and vary depending on the forming method.
It is preferable that the thickness be in the range of 10 to 300 nm.

The thickness of the hole injecting / transporting layer and the thickness of the electron injecting / transporting layer depend on the design of the recombination / light emitting region, but may be about the same as the thickness of the light emitting layer or about 1/10 to 10 times. When the hole or electron injection layer and the transport layer are separated from each other, it is preferable that the injection layer has a thickness of 1 nm or more and the transport layer has a thickness of 1 nm or more. At this time, the upper limit of the thickness of the injection layer and the transport layer is usually about 500 nm for the injection layer and 500 nm for the transport layer.
It is about. Such a film thickness is the same when two injection / transport layers are provided.

The light emitting layer of the organic EL device contains a fluorescent substance which is a compound having a light emitting function. Examples of such a fluorescent substance include, for example, JP-A-63-26469.
No. 2 discloses at least one compound selected from compounds such as quinacridone, rubrene, and styryl dyes. Also, Tris (8
Quinolinol derivatives such as metal complex dyes having 8-quinolinol or a derivative thereof as a ligand, such as (quinolinolato) aluminum; tetraphenylbutadiene, anthracene, perylene, coronene, and 12-phthaloperinone derivatives. Further, phenylanthracene derivatives described in JP-A-8-12600 (Japanese Patent Application No. 6-110569), tetraarylethene derivatives described in JP-A-8-12969 (Japanese Patent Application No. 6-114456), and the like are described. Can be used.

Further, it is preferable to use in combination with a host substance capable of emitting light by itself, and it is preferable to use it as a dopant. In such a case, the content of the compound in the light emitting layer is 0.01 to 10% by weight, and more preferably 0.1 to 10% by weight.
It is preferably 1 to 5% by weight. When used in combination with a host substance, the emission wavelength characteristics of the host substance can be changed, light emission shifted to a longer wavelength becomes possible, and the luminous efficiency and stability of the device are improved.

The host substance is preferably a quinolinolato complex, and more preferably an aluminum complex having 8-quinolinol or a derivative thereof as a ligand. Such an aluminum complex is disclosed in JP-A-63-26469.
No. 2, JP-A-3-255190, JP-A-5-7073
3, JP-A-5-258859, JP-A-6-2158
No. 74 and the like.

Specifically, first, tris (8-quinolinolato) aluminum, bis (8-quinolinolato) magnesium, bis (benzo {f} -8-quinolinolato) zinc, bis (2-methyl-8-quinolinolato) aluminum Oxide, tris (8-quinolinolato) indium,
Tris (5-methyl-8-quinolinolato) aluminum, 8-quinolinolatolithium, tris (5-chloro-
8-quinolinolato) gallium, bis (5-chloro-8-
Quinolinolato) calcium, 5,7-dichloro-8-quinolinolatoaluminum, tris (5,7-dibromo-
8-hydroxyquinolinolato) aluminum and poly [zinc (II) -bis (8-hydroxy-5-quinolinyl) methane].

In addition to 8-quinolinol or its derivative, an aluminum complex having another ligand may be used.
8-quinolinolato) (phenolato) aluminum (III)
, Bis (2-methyl-8-quinolinolato) (ortho-
Cresolato) aluminum (III), bis (2-methyl-
8-quinolinolato) (meth-cresolate) aluminum
(III), bis (2-methyl-8-quinolinolato) (para-cresolato) aluminum (III), bis (2-methyl-8-quinolinolato) (ortho-phenylphenolate)
Aluminum (III), bis (2-methyl-8-quinolinolato) (meth-phenylphenolato) aluminum (II
I), bis (2-methyl-8-quinolinolato) (para-
Phenylphenolato) aluminum (III), bis (2-
Methyl-8-quinolinolato) (2,3-dimethylphenolato) aluminum (III), bis (2-methyl-8-quinolinolato) (2,6-dimethylphenolato) aluminum (III), bis (2-methyl- 8-quinolinolato)
(3,4-dimethylphenolato) aluminum (III),
Bis (2-methyl-8-quinolinolato) (3,5-dimethylphenolato) aluminum (III), bis (2-methyl-8-quinolinolato) (3,5-di-tert-butylphenolato) aluminum (III) ), Bis (2-methyl-8)
-Quinolinolato) (2,6-diphenylphenolato) aluminum (III), bis (2-methyl-8-quinolinolato) (2,4,6-triphenylphenolato) aluminum (III), bis (2-methyl- 8-quinolinolato)
(2,3,6-trimethylphenolato) aluminum (I
II), bis (2-methyl-8-quinolinolato) (2,
3,5,6-tetramethylphenolato) aluminum (I
II), bis (2-methyl-8-quinolinolato) (1-naphthrat) aluminum (III), bis (2-methyl-8
-Quinolinolato) (2-naphthrat) aluminum (II
I), bis (2,4-dimethyl-8-quinolinolato)
(Ortho-phenylphenolato) aluminum (III),
Bis (2,4-dimethyl-8-quinolinolato) (para-
Phenylphenolato) aluminum (III), bis (2,
4-dimethyl-8-quinolinolato) (meta-phenylphenolato) aluminum (III), bis (2,4-dimethyl-8-quinolinolato) (3,5-dimethylphenolato) aluminum (III), bis (2 4-dimethyl-8
-Quinolinolato) (3,5-di-tert-butylphenolato) aluminum (III), bis (2-methyl-4-ethyl-8-quinolinolato) (para-cresolato) aluminum (III), bis (2-methyl) -4-methoxy-8-quinolinolato) (para-phenylphenolato) aluminum (III), bis (2-methyl-5-cyano-8-quinolinolato) (ortho-cresolato) aluminum (III),
Bis (2-methyl-6-trifluoromethyl-8-quinolinolato) (2-naphthrat) aluminum (III);

In addition, bis (2-methyl-8-quinolinolato) aluminum (III) -μ-oxo-bis (2-
Methyl-8-quinolinolato) aluminum (III), bis (2,4-dimethyl-8-quinolinolato) aluminum
(III) -μ-oxo-bis (2,4-dimethyl-8-quinolinolato) aluminum (III), bis (4-ethyl-
2-methyl-8-quinolinolato) aluminum (III)-
μ-oxo-bis (4-ethyl-2-methyl-8-quinolinolato) aluminum (III), bis (2-methyl-4
-Methoxyquinolinolato) aluminum (III) -μ-oxo-bis (2-methyl-4-methoxyquinolinolato)
Aluminum (III), bis (5-cyano-2-methyl-
8-quinolinolato) aluminum (III) -μ-oxo-
Bis (5-cyano-2-methyl-8-quinolinolato) aluminum (III), bis (2-methyl-5-trifluoromethyl-8-quinolinolato) aluminum (III) -μ
-Oxo-bis (2-methyl-5-trifluoromethyl-8-quinolinolato) aluminum (III) and the like.

Other host materials are disclosed in
Phenylanthracene derivative described in JP-A-12600 (Japanese Patent Application No. 6-110569) and JP-A-8-1296
No. 9 (Japanese Patent Application No. 6-114456) is also preferable.

The light emitting layer may also serve as an electron injection / transport layer. In such a case, it is preferable to use tris (8-quinolinolato) aluminum or the like. These fluorescent substances may be deposited.

The light emitting layer is preferably a mixed layer of at least one kind of hole injecting and transporting compound and at least one kind of electron injecting and transporting compound, if necessary.
Further, it is preferable that a dopant is contained in the mixed layer. The content of the compound in such a mixed layer is preferably 0.01 to 20% by weight, more preferably 0.1 to 15% by weight.

In the mixed layer, a carrier hopping conduction path is formed, so that each carrier moves in a material having a favorable polarity, and injection of a carrier having the opposite polarity is less likely to occur, so that the organic compound is less likely to be damaged. This has the advantage that the element life is extended. Further, by including the above-described dopant in such a mixed layer, the emission wavelength characteristics of the mixed layer itself can be changed, the emission wavelength can be shifted to a longer wavelength, and the emission intensity is increased, The stability of the device can be improved.

The hole injecting and transporting compound and the electron injecting and transporting compound used in the mixed layer may be selected from the compounds for the hole injecting and transporting layer and the compounds for the electron injecting and transporting layer described later. Among them, compounds for the hole injection transport layer include amine derivatives having strong fluorescence,
For example, it is preferable to use a triphenyldiamine derivative which is a hole transport material, a styrylamine derivative, or an amine derivative having an aromatic condensed ring.

As the compound capable of injecting and transporting electrons, it is preferable to use a quinoline derivative, furthermore a metal complex having 8-quinolinol or a derivative thereof as a ligand, particularly tris (8-quinolinolato) aluminum (Alq3). It is also preferable to use the above-mentioned phenylanthracene derivatives and tetraarylethene derivatives.

The mixing ratio in this case depends on the respective carrier mobilities and carrier concentrations. In general, the weight ratio of the compound of the hole injecting / transporting compound / the compound having the electron injecting / transporting function is 1/99 to less. 99/1, more preferably 10/90 to 90/10, particularly preferably 20/80
It is preferable to set it to about 80/20.

The thickness of the mixed layer is preferably not less than the thickness of one molecular layer and less than the thickness of the organic compound layer. Specifically, the thickness is preferably 1 to 85 nm, more preferably 5 to 60 nm, particularly preferably 5 to 50 nm.

As a method of forming the mixed layer, co-evaporation in which evaporation is performed from different evaporation sources is preferable. However, when the vapor pressures (evaporation temperatures) are the same or very close, the mixed layers are previously mixed in the same evaporation board. Alternatively, it can be deposited. In the mixed layer, it is preferable that the compounds are uniformly mixed, but in some cases, the compounds may exist in an island shape. The light-emitting layer is generally formed to a predetermined thickness by vapor-depositing an organic fluorescent substance or by dispersing and coating the resin in a resin binder.

The hole injecting and transporting layer is described in, for example, JP-A-63-295695 and JP-A-2-19169.
4, JP-A-3-792, JP-A-5-234
681, JP-A-5-239455, JP-A-5-299174, JP-A-7-126225, JP-A-7-126226, JP-A-8-100
Various organic compounds described in JP-A-172, EP0650955A1, and the like can be used. For example, a tetraarylbendicine compound (triaryldiamine or triphenyldiamine: TPD), an aromatic tertiary amine, a hydrazone derivative, a carbazole derivative, a triazole derivative, an imidazole derivative, an oxadiazole derivative having an amino group, polythiophene, etc. . These compounds may be used alone or in combination of two or more. When two or more kinds are used in combination, they may be stacked as separate layers or mixed.

When the hole injecting and transporting layer is provided separately as a hole injecting layer and a hole transporting layer, a preferable combination can be selected from compounds having a hole injecting and transporting property. At this time, it is preferable to laminate the compounds in order from the hole injecting electrode (ITO or the like) with the smallest ionization potential. Further, it is preferable to use a compound having a good thin film property on the surface of the hole injection electrode. Such a stacking order is the same when two or more hole injection transport layers are provided. With such a stacking order, the driving voltage is reduced, and the occurrence of current leakage and the occurrence and growth of dark spots can be prevented. In addition, in the case of forming an element, since a thin film of about 1 to 10 nm can be made uniform and pinhole-free because evaporation is used,
Even if a compound having a small ionization potential and having absorption in the visible region is used for the hole injection layer, it is possible to prevent a change in the color tone of the emission color and a decrease in efficiency due to reabsorption. The hole injecting and transporting layer can be formed by vapor deposition of the above compound in the same manner as the light emitting layer and the like.

The electron injecting / transporting layer is made of a quinoline derivative such as an organometallic complex having 8-quinolinol such as tris (8-quinolinolato) aluminum (Alq ³ ) or a derivative thereof as a ligand, an oxadiazole derivative, a perylene derivative. , Pyridine derivatives, pyrimidine derivatives, quinoxaline derivatives, diphenylquinone derivatives, nitro-substituted fluorene derivatives, and the like. The electron injection / transport layer may also serve as the light emitting layer. In such a case, it is preferable to use tris (8-quinolinolato) aluminum or the like. The electron injecting and transporting layer may be formed by vapor deposition or the like, similarly to the light emitting layer.

In the case where the electron injecting and transporting layer is divided into an electron injecting layer and an electron transporting layer, a preferable combination can be selected from the compounds for the electron injecting and transporting layer. At this time, it is preferable to stack the compounds in descending order of the electron affinity value from the electron injection electrode side. Such a stacking order is the same when two or more electron injection / transport layers are provided.

In the organic layer, a hole injection / transport layer, an electron injection / transport layer, etc. may be formed of an inorganic material.

The emission color may be controlled by using a color filter film, a color conversion film containing a fluorescent substance, or a dielectric reflection film on the substrate.

As the color filter film, a color filter used in a liquid crystal display or the like may be used.
The characteristics of the color filter may be adjusted in accordance with the light emitted from the organic EL element to optimize the extraction efficiency and the color purity.

When a color filter capable of cutting off short-wavelength external light that is absorbed by the EL element material or the fluorescence conversion layer is used, the light resistance of the element and the display contrast are improved.

An optical thin film such as a dielectric multilayer film may be used instead of the color filter.

The fluorescence conversion filter film absorbs EL light and emits light from the phosphor in the fluorescence conversion film to convert the color of the emitted light. It is formed from a fluorescent material and a light absorbing material.

As the fluorescent material, basically, a material having a high fluorescence quantum yield may be used, and it is desirable that the fluorescent material has strong absorption in the EL emission wavelength region. In practice, laser dyes and the like are suitable, and rhodamine compounds, perylene compounds, cyanine compounds, phthalocyanine compounds (including subphthalocyanines, etc.) naphthaloimide compounds, condensed ring hydrocarbon compounds, condensed heterocyclic compounds A styryl compound, a coumarin compound or the like may be used.

As the binder, a material which basically does not quench the fluorescence may be selected, and a binder which can be finely patterned by photolithography, printing or the like is preferable. Further, a material that does not suffer damage during the formation of ITO or IZO is preferable.

The light absorbing material is used when the light absorption of the fluorescent material is insufficient, but may be omitted when unnecessary. As the light absorbing material, a material that does not quench the fluorescence of the fluorescent material may be selected.

The hole injecting and transporting layer, the light emitting layer and the electron injecting and transporting layer can be formed by a uniform thin film.
It is preferable to use a vacuum deposition method. When vacuum deposition is used, the amorphous state or the crystal grain size is 0.2 μm
The following homogeneous thin film is obtained. When the crystal grain size exceeds 0.2 μm, the light emission becomes non-uniform, the driving voltage of the device must be increased, and the hole injection efficiency is significantly reduced.

The conditions for vacuum deposition are not particularly limited.
The degree of vacuum is 0 ^-4 Pa or less, and the deposition rate is 0.01 to 1 nm /
It is preferable to set it to about sec. Further, it is preferable to form each layer continuously in a vacuum. If they are formed continuously in a vacuum, impurities can be prevented from adsorbing at the interface between the layers, so that high characteristics can be obtained. Further, the driving voltage of the element can be reduced, and the occurrence and growth of dark spots can be suppressed.

In the case where a plurality of compounds are contained in one layer when a vacuum evaporation method is used for forming each of these layers, it is preferable to co-deposit each boat containing the compounds by individually controlling the temperature.

The organic EL element is driven by direct current or pulse. The applied voltage is usually about 2 to 30V.

[0101]

<Embodiment 1> FIGS. 11 to 22 show an embodiment of the present invention in which an element isolation structure is formed using non-photosensitive polyimide.

As shown in FIGS. 11 and 12, ITO was formed to a thickness of 100 nm on a transparent substrate and patterned in a stripe shape. FIG. 12 is a sectional view taken along the line AA ′ in FIG. Subsequently, as shown in FIGS. 13 and 14, 2 μm of polyimide 3a was applied and baked at 145 ° C. for 1 hour to be semi-cured. FIG. 14 is a sectional view taken along the line BB ′ of FIG. Further, a photoresist 4a of a bodi type is further formed thereon.
Was applied and patterned so as to be orthogonal to the ITO pattern. During the development of the resist, the polyimide is a developing solution of the resist, a 2.38% concentration of TMAH (tetr
(amethyl ammonium hydroxide). This polyimide becomes the element isolation structure 3a.

Next, as shown in FIG. 15, after the development,
Without stripping the resist 4a, the resist 4 was further coated at 3 μm. Thereby, the step of removing the resist can be omitted. Further, the photomask was positioned so that the groove was formed on the polyimide, and FIG.
Exposure was performed as shown in FIG. In addition, FIG. 16 is B-
It is a B 'sectional arrow view. 0.5% of polyimide during development
By adjusting the developing time so that the etching is performed by 1.5 μm, it becomes possible to form an element isolation structure as shown in FIGS. FIG. 18 is the same as FIG.
FIG. 7 is a sectional view taken along the line BB ′ of FIG. When forming this last resist, for example, as shown in FIGS.
It is also possible to make the shape such that it covers the step portion of.
FIG. 20 is a sectional view taken along the line BB ′ of FIG.

The organic layer 5 including the light emitting layer in the thin film pattern manufactured as described above was formed by a vacuum evaporation method as shown in FIG. FIG. 21 shows a cross section A-
A portion corresponding to the view from arrow A 'is shown. The materials are as follows. Here, only one example is given, but as is clear from the concept, the present invention can be applied irrespective of a film forming material as long as it can be formed by an evaporation method.

The following N, N'-bis (m-methylphenyl) -N, N'-diphenyl-1,1'-biphenyl-
4,4'-diamine (N, N'-bis (m-methyl phenyl) -N, N
'-Diphenyl-1,1'-biphenyl-4,4'-diamine or less TPD
Is referred to as tris (8-hydroxyquinoline) aluminum (tris (8-hydroxyqui
The second electrode was continuously formed as a cathode without breaking vacuum.
As a film forming method, a vacuum injection method was selected for the hole injection layer and the hole transport layer, and a DC sputtering method was selected for the second electrode.

[0106]

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[0107]

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As the second electrode, an Al / Li alloy (L
i: 7 at%) at a gas pressure of 1 Pa, a power of 1 W / cm ² and a film thickness of 5 n.
m, and 0.3 P of Al as a wiring electrode
a, a 200 nm-thick film was laminated at a power of 1 W / cm ² . As shown in FIG. 22, the sputtering method has better wraparound to a step portion or a portion shaded by an eave than the vacuum evaporation method, and thus reaches the inside of the groove of the element isolation structure. However, since it was not attached to the back side of the eaves, the adjacent second electrodes were electrically separated. Note that FIG.
FIG. 2 is a partially enlarged view of FIG.

As is clear from the gist, the present invention is not limited to the organic EL element constituting films used in this embodiment and the order of lamination thereof, but includes a hole injection layer, a light emitting layer, a second electrode, and a wiring electrode. May be used, and a hole injection layer, an electron transport layer, an electron injection layer, and the like may be further formed to form a multilayer structure. In other words, the type of material to be deposited,
Applicable regardless of the structure.

<Embodiment 2> FIGS. 23 to 30 show a second embodiment of the present invention.
In this example, an element isolation structure is formed using an SOG film and Al.

First, as shown in FIGS.
An ITO pattern was formed in the same manner as in 1. Note that FIG.
4 is a sectional view taken along the line AA ′ of FIG.

Next, a 500 nm SOG film is applied,
Fired at ℃. Subsequently, 800 nm of Al was sputtered.
A film was formed.

As shown in FIGS. 25 and 26, Al (3c)
/ SOG (3b) was continuously buttered by dry etching, and the resist was ashed without breaking vacuum. FIG. 26 is a sectional view taken along the line BB ′ of FIG.

In the same manner as in Example 1, after forming a resist pattern as shown in FIGS. 27 and 28, the resist was post-baked at 150 ° C. for 30 minutes, and only Al was removed by etching with 1% sodium hydroxide. A desired element isolation structure as shown in FIGS. 29 and 30 was formed. Note that FIG.
8 and 30 are sectional views taken along arrows BB ′ of FIGS. 27 and 29, respectively.

<Embodiment 3> FIGS. 31 to 38 show a third embodiment of the present invention.
An example in which an element isolation structure is formed using an acrylic resin and SiO ₂ will be described.

As shown in FIGS. 31 and 32, an ITO pattern 2 was formed on a substrate 1 in the same manner as in Example 1.

Next, as shown in FIGS. 33 and 34, a photosensitive acrylic resin 3d was formed to a thickness of 2 μm, and after forming a stripe pattern, it was cured at 220 ° C. Continuing with FIG.
As shown in FIGS. 5 and 36, 1 of SiO ₂ (7) was
A 00 nm film was formed. 34 and 36 correspond to FIG.
It is BB 'sectional arrow view of 3,35.

After forming a resist pattern,
The resist was post-baked for 30 minutes, and SiO ₂ was removed by dry etching. At this time, by treating the resist under such conditions that the resist is also etched, the end of the SiO ₂ pattern could have a taper angle of 30 ° C. or less. By further ashing processing,
Part of the resist and part of the acrylic resin 3d exposed when the SiO ₂ was etched were ashed, and FIG.
An element isolation structure having a shape like 38 could be formed. FIG. 38 is a sectional view taken along the line BB ′ of FIG.

<Embodiment 4> FIG. 5 shows an embodiment of the present invention in which an element isolation structure is formed using a commercially available substrate on which a color filter / SiO ₂ / ITO is laminated.

FIGS. 39 and 40 show a pattern shape and a laminated structure of the substrate laminated structure. This substrate laminated structure
Red color filter layer 11r, green color filter layer 11g, blue color filter layer 1
1b. Then, the overcoat layer 12 is formed thereon.
A transparent acrylic resin, a SiO ₂ barrier layer 13 formed thereon, and an ITO transparent conductive film 2 formed thereon.

As shown in FIGS. 41 and 42, ITO2 was first patterned by the same manufacturing process as in Example 1. FIG. 42 is a sectional view taken along the line AA ′ of FIG. Next, as shown in FIGS. 43 and 44, a base 3e made of polyimide was formed. At this time, similarly to the above embodiment, the resist 3f is left as it is, and further, FIGS.
As shown in (2), the outer jacket was formed with the resist 4 to form an element isolation structure. 44 and 46 respectively correspond to FIG.
It is BB 'sectional view taken on the arrow of 3,45. FIG. 47 is a cross-sectional view taken along the line CC ′ of FIG.

Thereafter, a white luminous body was formed. First,
As a hole injection layer, poly (thiophene-2,5
-Diyl) to a thickness of 10 nm, and a TPD having the following structure doped with rubrene at a ratio of 1 vt% as a hole transport layer and a yellow light emitting layer was formed to a thickness of 5 nm by co-evaporation. The concentration of rubrene is preferably about 0.1 to 10 vt%, and light is emitted with high efficiency at this concentration. The concentration may be determined from the color balance of the luminescent color, and is determined by the optical attitude and the wavelength spectrum of the blue luminescent layer formed thereafter. Further, as a blue light emitting layer,
4,4'-bis [(1,2,2-triphenyl) ethenyl]
Biphenyl 50 nm, Alq 3 10
0 °, Al-Li alloy (Li: 7 at) as the second electrode
%) And Al were formed by a Spack method without breaking vacuum.
Even when a method having relatively high step coverage such as sputtering was used, the cathode was separated when an undercut was formed in the groove.

[0123]

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[0124]

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[0125]

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[0126]

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Lastly, a glass plate was bonded and sealed in a dry N ₂ atmosphere to complete a display panel.

It was confirmed that the thus manufactured color display had high reliability because the display was bright and the film was formed without breaking the vacuum.

As described above, as a structure for electrically isolating adjacent light emitting elements, a trapezoidal or semi-cylindrical structure is provided with an element isolation structure provided with a groove.
Without reducing the effective light-emitting area, it is possible to obtain an element isolation structure having a sufficient strength, and a sputtering method can be selected as a method for forming the second electrode. It has become possible to manufacture a reliable organic EL display device at a high yield. Further, a SiO 2 film is placed on a glass substrate which is commercially available for a liquid crystal display.
Purchasing a substrate on which ₂ and ITO are laminated, or a substrate on which a film such as glass / color filter / overcoat / SiO ₂ / ITO is laminated, and manufacturing an organic EL display device using the substrate. Has become possible, the number of manufacturing facilities is reduced, and as a result, panels can be manufactured at low cost.

[0130]

As described above, according to the present invention, the ratio of the light emitting region is wide, the reliability is high, a large substrate can be used, and a large number of displays are arranged on one substrate. In addition, it is possible to provide an organic EL display device and a method for manufacturing the same, which can reduce the manufacturing cost by using a commercially available substrate.

[Brief description of the drawings]

FIG. 1 is a plan view showing one manufacturing process of an organic EL device of the present invention.

FIG. 2 is a sectional view taken along the line A-A 'in FIG.

FIG. 3 is a plan view showing one manufacturing process of the organic EL device of the present invention.

FIG. 4 is a sectional view taken along arrow B-B 'of FIG.

FIG. 5 is a plan view showing one manufacturing step of the organic EL device of the present invention.

6 is a sectional view taken along the line B-B 'of FIG.

FIG. 7 is a plan view showing one manufacturing step of the organic EL device of the present invention.

8 is a sectional view taken along the line B-B 'of FIG.

FIG. 9 is a plan view showing one manufacturing step of the organic EL element of the present invention.

FIG. 10 is a sectional view taken along the line B-B ′ of FIG. 9;

FIG. 11 is a plan view showing one manufacturing step of the organic EL device of the present invention.

12 is a sectional view taken along the line A-A 'in FIG.

FIG. 13 is a plan view showing one manufacturing step of the organic EL device of the present invention.

FIG. 14 is a sectional view taken along the line B-B ′ of FIG. 13;

FIG. 15 is a plan view showing one manufacturing step of the organic EL device of the present invention.

FIG. 16 is a sectional view taken along the line B-B ′ of FIG. 15;

FIG. 17 is a plan view showing one manufacturing step of the organic EL element of the present invention.

18 is a sectional view taken along the line B-B 'of FIG.

FIG. 19 is a plan view showing one manufacturing step of the organic EL device of the present invention.

FIG. 20 is a sectional view taken along the line B-B ′ of FIG. 19;

FIG. 21 is a cross-sectional view showing one manufacturing step of the organic EL element of the present invention.

FIG. 22 is a partially enlarged view of FIG. 21;

FIG. 23 is a plan view showing one manufacturing step of the organic EL element of the present invention.

24 is a sectional view taken along the arrow line B-B 'in FIG.

FIG. 25 is a plan view showing one manufacturing step of the organic EL element of the present invention.

FIG. 26 is a sectional view taken along the line B-B ′ of FIG. 25;

FIG. 27 is a plan view showing one manufacturing step of the organic EL element of the present invention.

28 is a sectional view taken along the arrow line B-B 'in FIG.

FIG. 29 is a plan view showing one manufacturing step of the organic EL element of the present invention.

30 is a sectional view taken along the line B-B 'of FIG. 29.

FIG. 31 is a plan view showing one manufacturing step of the organic EL element of the present invention.

FIG. 32 is a sectional view taken along the line A-A ′ in FIG. 31;

FIG. 33 is a plan view showing one manufacturing step of the organic EL device of the present invention.

FIG. 34 is a sectional view taken along the line B-B ′ of FIG. 33;

FIG. 35 is a plan view showing one manufacturing step of the organic EL element of the present invention.

FIG. 36 is a sectional view taken along the line B-B ′ of FIG. 35;

FIG. 37 is a plan view showing one manufacturing step of the organic EL element of the present invention.

38 is a sectional view taken along the line B-B 'of FIG.

FIG. 39 is a plan view showing one manufacturing step of the organic EL element of the present invention.

40 is a sectional view taken along the line B-B 'of FIG. 39.

FIG. 41 is a plan view showing one manufacturing step of the organic EL element of the present invention.

42 is a cross-sectional view taken along the line A-A ′ in FIG. 41.

FIG. 43 is a plan view showing one manufacturing step of the organic EL element of the present invention.

FIG. 44 is a sectional view taken along the line B-B ′ of FIG. 43;

FIG. 45 is a plan view showing one manufacturing step of the organic EL element of the present invention.

46 is a sectional view taken along the line B-B ′ of FIG. 45.

FIG. 47 is a sectional view taken along the line C-C ′ in FIG. 45;

FIG. 48 is a partial cross-sectional view showing a conventional method for manufacturing an organic EL display having barrier ribs.

FIG. 49 is a schematic view showing a state of conventional oblique deposition.

FIG. 50 is a partial cross-sectional view showing a film formation state in a portion A of FIG. 49.

FIG. 51 is a partial cross-sectional view showing the state of film formation in the portion of FIG. 49B.

[Explanation of symbols]

 Reference Signs List 1 substrate 2 ITO transparent electrode (first electrode) 3 base 4 resist 5 organic layer 6 second electrode

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tsuyoshi Morita 1-13-1 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation (72) Inventor Dai Takagi 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK In-house F term (reference) 3K007 AB11 AB15 AB18 BA06 CA01 CB01 DA01 DB03 EB00 FA01 FA02 5C094 AA10 AA31 AA43 AA44 AA46 AA49 BA29 CA19 DA13 DB04 EA05 EA10 EB02 FA01 FA02 FA03 FB01 FB12 FB15 GB10

Claims (11)

[Claims] 1. A first electrode on an insulator, a single layer or a plurality of organic layers at least a part of which has a light emitting function, a plurality of second electrodes, and a second electrode adjacent to each other An element isolation structure for electrically isolating the element, wherein the element isolation structure is at least a three-dimensional structure, and a groove structure is formed thereon, and the second structure is formed by the groove structure. An organic EL display device in which the electrodes are electrically separated. 2. The organic EL device according to claim 1, wherein the height of the element isolation structure is higher than the total thickness of the organic layer and the second electrode.
Display device. 3. The organic EL display device according to claim 1, wherein the device isolation structure is substantially trapezoidal or semicylindrical. 4. The organic EL according to claim 1, wherein the groove of the element isolation structure has an overhang structure.
Display device. 5. The organic EL display device according to claim 1, wherein an angle at which an end of the element isolation structure contacts the first electrode is 45 degrees or less. 6. The organic EL display device according to claim 1, wherein at least a portion of said element isolation structure in contact with said first electrode is an insulator. 7. The organic layer and the second electrode formed at least in a portion where the first electrode and the element isolation structure are in contact with each other, are formed continuously.
6. The organic EL display device according to any of 6. 8. The organic EL display device according to claim 1, wherein a part of the element isolation structure covers at least an end of the first electrode. 9. The organic EL display device according to claim 1, wherein constituent materials of said element isolation structure are photoresist and polyimide. 10. The organic EL display device according to claim 1, wherein the second electrode or the conductive film formed on the second electrode is formed by a sputtering method. 11. A step of forming a first electrode, a step of forming an element isolation structure which is a three-dimensional structure having a groove structure formed thereon, at least a part of which has a single layer or a light emitting function. Forming a plurality of organic layers; and forming a second electrode, wherein the method of forming the second electrode does not completely cover the groove structure of the element isolation structure. A method for manufacturing an organic EL display device formed by a method with low step coverage.