JP2000299361A - Charged beam processing apparatus and method, semiconductor failure analysis method, and sample vacuum evaluation apparatus - Google Patents

Abstract

(57) [PROBLEMS] To provide a charged beam capable of performing failure analysis and defect correction particularly on a lower layer wiring of a sample such as a semiconductor device having a wiring layer having a multilayered and narrow pitch wiring. A processing apparatus and method, and a semiconductor failure analysis method are provided. When performing a charged beam process from one surface of a sample such as a semiconductor device, an energy beam or probing is performed from the other surface to monitor a processing position and a processing depth of a local process by the charged beam. Thus, highly reliable failure analysis is realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged beam processing apparatus and method for performing defect analysis for analyzing design defects and process defects in a sample such as a semiconductor device and correcting defects such as process defects, and a semiconductor defect. The present invention relates to an analysis method and an apparatus for evaluating a sample in a vacuum.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been miniaturized and multilayered, and logic has become complicated. As a result, product defects such as defects due to the manufacturing process and design defects occur frequently, and it is becoming important to analyze the causes of the defects. Among such several defects, for example, an EB tester, an emission microscope, an OBIC (Optical)
Beam Induced Current) and OB
IRCH (Optical Beam Induced)
(Resistance Change) analysis, mechanical prober, and the like are used, and as a logic debugging method, wiring correction using a charged beam is used.

[0003]

In the wiring correction using a charged beam such as a focused ion beam or an electron beam, the defective portion of a defective device is directly corrected, that is, the operation is confirmed after the wiring is cut or connected. , Debugging becomes possible. However, in devices with advanced miniaturization, it is extremely difficult to correct wiring in terms of processing position accuracy and processing depth control of the focused ion beam, and the conditions under which wiring can be corrected (processing locations include areas with sparse patterns, wiring layers Has a problem that a shallow layer relatively close to the surface is limited. In addition, in charged beam logic debugging having a high degree of processing difficulty, there is a high possibility that a defect in charged beam processing will occur, and there is a problem in that the correction yield decreases. Furthermore, in logic debugging, there are cases where the defective portion cannot be limited, and the wiring is actually corrected and verified by trial and error based on the experience and intuition of the designer. As a result of debugging,
If the result is still defective, it is not possible to distinguish whether the repair process is defective or the repair location is misplaced, and there is a problem that the analysis is prolonged.

[0004] An object of the present invention is to solve the above problems.
Charged beam processing apparatus and method capable of performing defect analysis and defect correction particularly on lower layer wiring for a sample such as a semiconductor device having a wiring layer composed of multilayered and narrowed wirings, and a semiconductor defect It is to provide an analysis method. Another object of the present invention is to provide an apparatus for evaluating a sample in a vacuum, which is capable of performing an evaluation in a vacuum on a sample such as a semiconductor device having a wiring layer having a multilayered and narrowed wiring. Is to do.

[0005]

In order to achieve the above object, the present invention provides a method for performing a charged beam process from one side of a sample such as a semiconductor device by performing an energy beam or probing from the other side. By detecting (for example, monitoring) the processing position and processing depth of the local process using the charged beam, a highly reliable failure analysis can be realized. In addition, the present invention provides a sample chamber in which a stage on which a sample such as a semiconductor device is mounted is installed, and a charged beam generated by a charged beam source is focused by a charged beam optical system to one side of the sample (for example, a wiring layer). Side), a charged beam processing means for performing charged beam processing such as processing or film formation on the sample, and a laser beam generated from a laser oscillation source via the laser optical system on the other surface side of the sample. (E.g., from the substrate side) and a detection means for detecting (including observation) the charged beam processing.

In the present invention, the detection means of the charged beam processing apparatus preferably includes an imaging means for detecting an optical image formed by reflected light or scattered light from the other surface of the sample based on the irradiation of the laser beam. It is characterized by having. Further, the present invention is characterized in that the detecting means of the charged beam processing apparatus includes a probing means for detecting an electric signal by a mechanical probe based on laser beam irradiation. In addition, the present invention provides a sample chamber in which a stage on which a sample such as a semiconductor device is mounted is installed, and a first charged beam generated by a first charged beam source is focused by a first charged beam optical system to be used as a sample. A charged beam processing means for irradiating the sample from one surface side (for example, the substrate side) to perform charged beam processing such as processing or film formation on the sample, and the first charged beam generated by the second charged beam source Detecting means for irradiating a second charged beam different from the beam from the other surface side (for example, a wiring layer) of the sample and detecting (including observation) the charged beam processing. Device.

Further, according to the present invention, the detecting means of the charged beam processing apparatus includes a potential distribution for detecting a potential distribution of the wiring in the sample based on the irradiation of the second charged beam by, for example, a secondary electron emission rate. It is characterized by including detection means (a charged particle detector or the like). Further, in the present invention, the detection means of the charged beam processing apparatus includes a probing means (including a case where an electric signal is applied) for detecting an electric signal by a mechanical probe based on the irradiation of the second charged beam. It is characterized by the following. Further, the present invention provides a sample chamber in which a stage on which a sample such as a semiconductor device is mounted is installed, and a charged beam generated by a charged beam source is irradiated from one surface side (for example, a wiring layer side) of the sample to the sample. A charged beam processing means for performing charged beam processing such as processing or film formation on the other hand, and detecting the charged beam processing from the sample, such as a current or voltage change appearing as a change in current or resistance excited by a mechanical probe. A charged beam processing apparatus comprising a probing detection unit.

Further, according to the present invention, a charged beam generated by a charged beam source is focused by a charged beam optical system, and the charged beam is focused from one surface side (for example, a wiring layer side) of a sample such as a semiconductor device installed in a sample chamber. A charged beam processing step of irradiating the sample and performing a charged beam processing such as processing or film formation on the sample, and a laser beam generated from a laser oscillation source via the laser optical system on the other surface side of the sample (for example, the substrate). side)
A detecting step of detecting (including observation) the charged beam processing by capturing an optical image composed of reflected light or scattered light from the other surface side of the sample based on the irradiation of the laser beam by an imaging unit. And a charged beam processing method. In addition, the present invention focuses a charged beam generated by a charged beam source by a charged beam optical system and places a sample such as a semiconductor device installed in a sample chamber from one surface side (for example, a wiring layer side) to a local region. Irradiate,
A charged beam processing step of performing a desired charged beam processing on the sample, and irradiating a laser beam generated from a laser oscillation source from the other surface side (for example, the substrate side) of the sample via a laser optical system; A detection step of detecting (including observation) the charged beam processing by detecting a change in a laser-induced electric signal or a change in current or voltage obtained from the sample based on the irradiation of the laser beam with a mechanical probe. A charged beam processing method characterized by the following.

Further, according to the present invention, a first charged beam generated by a first charged beam source is focused by a first charged beam optical system, and is focused on one surface side of a sample such as a semiconductor device (for example, on a substrate side). ) Irradiates the sample to a local region to perform a desired charged beam processing on the sample, and a second charged beam generated by the second charged beam source and different from the first charged beam. Irradiating from the other surface side of the sample (for example, the wiring layer side), detecting a secondary charged particle signal from the sample, and detecting charged beam processing (including observation). This is a charged beam processing method. Further, according to the present invention, a first charged beam generated by a first charged beam source is focused by a first charged beam optical system and locally focused from one surface side (for example, a substrate side) of a sample such as a semiconductor device. Irradiating an area, performing a charged beam processing step of performing a desired charged beam processing on the sample, and applying a voltage to the sample by a mechanical probe, and generating the first charged beam generated by a second charged beam source. A second charged beam different from the charged beam is irradiated from the other surface side (for example, the wiring layer side) of the sample, and a secondary charged particle signal from the sample is detected to detect charged beam processing (including observation). A charged beam processing method.

Further, according to the present invention, a charged beam generated from a charged beam source is converged by a charged beam optical system, and a desired surface of a sample such as a semiconductor device mounted in a sample chamber (for example, from a wiring layer side) is desired. A charged beam processing step of performing desired processing by irradiating an area of the sample, and a detection step of detecting charged beam processing by detecting a change in an electric signal from the sample with a mechanical probe. This is a charged beam processing method. In addition, the present invention provides a method in which a focused charged beam is focused on a region to be corrected from the top surface (for example, the wiring layer side) of a semiconductor device installed in a sample chamber or a region requiring local processing to identify a cause of a defect. A charged beam processing step of irradiating and processing, and a state of the charged beam processing by detecting a physical signal from the semiconductor device by irradiating an energy beam from a lower surface side (for example, a substrate side) of the sample. (Including observation), and correcting the condition of the charged beam processing based on the detected state of the charged beam processing, or an analysis step of determining the quality of the semiconductor device. is there.

Further, the present invention provides a sample chamber held in a vacuum, a stage installed in the sample chamber, a sample holder for mounting a sample on the stage, and a three-dimensional positioning mounted on the sample holder. And an in-vacuum evaluation apparatus for a sample, comprising: Further, the present invention provides a sample chamber held in a vacuum, a stage mounted on the sample chamber, on which a sample is mounted, three-dimensional positioning for evaluating the sample, and a plurality of probe needles. And a contact-type probe that can arbitrarily extract and exchange the sample. As described above, according to the above configuration, in wiring correction and failure analysis by a charged beam such as a focused ion beam or an electron beam, by mounting a means for monitoring the correction process, a narrow pitch, which was conventionally difficult, It is possible to correct the deep wiring and improve the yield of the charged beam processing. Further, according to the above configuration, the reliability of the failure analysis is improved by monitoring the repair process, and the TAT (tact time) of the failure analysis is shortened by eliminating rework, thereby developing and manufacturing the semiconductor. Shorter period and lower cost can be realized.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a charged beam processing apparatus and method for performing failure analysis, defect correction, and the like of a semiconductor device and the like according to the present invention and an apparatus for evaluating a sample in a vacuum will be described with reference to the drawings. I do. 2. Description of the Related Art In recent years, semiconductor devices have been miniaturized and multilayered, and logic has become complicated. As a result, product defects such as defects due to the manufacturing process and design defects occur frequently. Therefore, it is important to analyze the cause of the defect and to correct the defect. That is, the semiconductor device according to the present invention is almost completed as a product so that a product defect such as a defect due to a manufacturing process or a design defect can be checked by an operation test using a tester. Naturally, it is possible to apply even a semi-finished product in which a defective portion can be specified to some extent. Further, the semiconductor device may be in a state of a semiconductor chip or a state of a substrate such as a semiconductor wafer.

(Embodiment 1) First, a first embodiment of a charged beam processing apparatus and method for performing failure analysis, defect correction, and the like of a semiconductor device or the like according to the present invention will be described. FIG. 1 is a diagram showing a first embodiment of a failure analysis device according to the present invention. The defect analysis apparatus according to the present invention controls an ion source 2 including a liquid metal Ga ion source, a duoplasma ion source, a gas plasma ion source, and the like, and an ion beam emitted from the ion source 2. An ion beam mirror which is provided with a current control system, an optical system for focusing an ion beam, an optical system for blanking, a deflection electrode for deflecting, and the like, and is kept in a vacuum by a vacuum exhaust device (not shown). Cylinder 1;
A charged particle detector 8 for detecting charged particles such as secondary electrons and secondary ions generated from the sample 7; and a charged beam or surface such as electrons and ions for neutralizing or releasing charges charged on the surface of the sample 7. An antistatic means 9 composed of a means for irradiating light of a wavelength to be excited and made conductive, a sample 7 such as a semiconductor device, etc. are mounted, and an XY stage, XY
A stage 6 composed of a Z stage and the like and a mechanical prober 20 for probing and detecting a current flowing through wiring in the sample 7 are installed, and a sample chamber 5 which is evacuated and evacuated, and a laser beam is irradiated from the back surface of the sample 7. A laser microscope 10 including a laser oscillation source 11 for irradiating and detecting and monitoring a laser microscope image obtained from the back surface of the sample, an optical system 14 including an objective lens, and imaging means 13 such as a camera. The charged particle image detected by the charged particle detector 8 and the sample 7 detected by the mechanical prober 20
The characteristics such as the current flowing through the wiring in the inside, the laser microscope image and the like imaged by the imaging means 13 are input and output on the monitor 100, and the ion optical system 4 And a control device (including a control power supply) 15 for controlling the ion source 2 and a computer 200 for controlling the stage 6. The ion optical system 4 includes, for example, an extraction electrode, an acceleration electrode, an aligner electrode, a blanking electrode, a stigma deflection electrode, an electrostatic lens, and a limiting aperture. Irradiation control is performed. Naturally, data such as the deflection amount (scanning amount) of the ion beam obtained from the control device (including the control power supply) 15, the ion beam current applied to the sample 7, and the diameter of the aperture for shaping the ion beam are input to the computer 200. Is done. Also, coordinate data at which the stage 6 is located is measured by the stage 6 and input to the computer 200.

According to the above configuration, the ion beam 3 is extracted from the ion source 2 provided in the ion beam column 1, and is controlled by the control device 15 based on a control command from the computer 200.
The beam is accelerated and focused by the ion optical system 4 controlled by the controller, and deflection control and control of beam irradiation and non-irradiation (blanking) are performed. The acceleration of the ion beam 3 is generally about 20 kV to 50 kV, and the current of the ion beam 3 varies from several pA to several tens nA, but is not limited thereto. The beam diameter of the ion beam 3 is usually converged by the ion optical system 4 to about several nm to about 1.0 μm. However, the beam diameter may be further narrowed or converged depending on the application. Then, a sample 7 formed from a semiconductor device or the like which is almost completed and which can be subjected to an operation test by a tester is mounted on a stage 6 provided in a sample chamber 5 kept in a vacuum by a vacuum exhaust device (not shown). (If necessary, the sample 7 may be mounted on the stage 6 via a sample holder. Alternatively, the sample 7 may be introduced via an autoloader which automatically mounts the stage from the semiconductor wafer cassette.) Next, the ion beam 3 is scanned by the ion optical system 4 with respect to the sample 7 mounted and positioned on the stage 6 to perform observation, processing, and film formation in cooperation with a deposition gas. Stage 6 is an XY stage, XYZ
A stage or the like is used. When the sample 7 is irradiated with the ion beam 3, secondary charged particles (secondary ions and secondary electrons) are emitted from the sample 7. The charged particle detector 8 detects secondary charged particles emitted from the sample 7, amplifies the signal, and inputs the amplified signal to the computer 200. Computer 2
00 is a SIM based on the stage coordinate system (position coordinates) input from the stage 6, the ion beam scanning signal input from the control device 15, and the secondary charged particle signal input from the charged particle detector 8. (Scanning Io
An n Microscope) image 100a is created and output on the monitor 100, so that observation, processing positioning, and the like can be performed. The positioning of the processing is performed, for example, by designating the processing position on the screen of the monitor 100 by using an electronic line, an electronic frame, or the like.
By detecting this and controlling the stage 6 and the like, the processing position on the sample can be positioned on the optical axis of the ion beam. The secondary charged particles (secondary ions and secondary electrons) emitted from the sample 7 reflect irregularities on the surface of the sample.

The computer 200 outputs a time change of the signal intensity on the monitor 100 based on the secondary charged particle signal input from the charged particle detector 8 to thereby process the end point (normally at the end point of the processing). Changes in the material, the intensity also changes in the secondary charged particle signal). Naturally, in the computer 200, the 2 input from the charged particle detector 8
The end point of the processing can be automatically determined by detecting the time change of the signal intensity based on the next charged particle signal. When the surface of the sample 7 (the surface irradiated with the ion beam 3) is electrically insulative, the surface is charged by the irradiation of the ion beam 3, so that the orbital deviation of the ion beam 3 and the dielectric breakdown of the sample 7 are prevented. As a result, desired processing becomes impossible. Therefore, by using a charging beam such as electrons or ions, or an antistatic means 9 composed of a means for irradiating light having a wavelength that excites the surface of an insulator to make it conductive (e.g., ultraviolet light in the case of SiO ₂ ). ,
Prevention or release of electrification enables desired processing even on the insulating film.

In the focused ion beam apparatus described above,
It is possible to perform processing for exposing a cross section of a semiconductor device (semiconductor element) by using a sputtering phenomenon by accelerated ions, repair of wiring defects of the semiconductor device, and observation and analysis of a sample surface. In the case of processing for exposing a cross section of a semiconductor, the cross section can be observed and analyzed by SEM observation. Further, the present invention can also be applied to defect correction of a photomask by ion beam processing. However, in the case of a semiconductor device as the sample 7, as shown in FIG. 2, the wiring layer 71 is more and more multi-layered, and further miniaturization is required. Further, the surface of the interlayer insulating layer is
MP (Chemical Mechanical Po)
In this case, the position information of the underlying wiring layer is lost. for that reason,
Regarding the lower layer wiring in the multilayer wiring layer 71, the secondary charged particles (2
It becomes difficult to detect them as secondary ion and secondary electron) images, and it becomes difficult to observe the lower wiring layer and to position it for processing. In the secondary charged particle image 100a monitored on the screen of the monitor 100, reference numeral 80 denotes a hole processed by irradiating the ion beam 3 in FIG. 2 until, for example, the second layer wiring is exposed. .

Therefore, a monitor device (such as a laser microscope) for monitoring the process using the ion beam 3 is required. Next, an embodiment of the monitor device (such as a laser microscope) will be described. First, it is necessary to perform processing on the sample 7 in advance, as described below, so that it can be monitored by the monitor device. That is, as shown in FIG. 2, a sample 6 composed of a semiconductor wafer or a semiconductor chip as a semiconductor device is placed on a stage 6 so that the surface on which the wiring layer 71 is formed can be irradiated with the ion beam 3.
When mounted on the top, the processing of the ion beam 3
In order to monitor by the method 2, the Si substrate 73 on the back surface immediately below the processing target position of the sample 7 is mechanically or mechanochemically localized beforehand so that the wiring to be processed by the laser beam 12 can be detected. (CMP (Chemical
(Mechanical Polishing method). The laser beam 12 emits a red He-Ne laser (wavelength: 633 nm) as the laser oscillation source 11 and the laser beam 12 emits a red He-Ne laser (wavelength: 63).
In the case of 3 nm, since the diffusion layer 74 does not pass through Si, the element isolation oxide film (for example, LOCOS and the material is Si
By performing mirror polishing to O ₂ ) 72, a laser microscope image of a lower wiring in the multilayer wiring layer 71 can be captured by the imaging unit 13 through the element isolation oxide film 72.

On the other hand, 1100 n
When a semiconductor laser having an infrared wavelength of about m to 1200 nm or more is used, about 1100 nm to 1
The laser light having an infrared wavelength of about 200 nm or more transmits the laser microscope image of the lower wiring in the multilayer wiring layer 71 even if the diffusion layer 74 remains up to about several μm to several tens μm because it transmits Si. It becomes possible to take an image. Next, setting of a monitor and a processing position using a laser microscope image will be described. That is, the Si of the semiconductor device
Or the like is mechanically or mechanochemically polished to reduce the thickness of the substrate 73 locally or entirely, and a red light having a long wavelength (600 nm to 760) transmitted through the thinned substrate portion 73.
A laser beam 12 of about nm or about 760 nm is emitted from a laser oscillation source 11 to form an optical system 14.
Is irradiated on the back surface of the sample 7 (the side opposite to the surface irradiated with the ion beam 3). The optical system 14 uses the principle of a confocal microscope, focuses the laser beam 12, scans the back surface of the sample 7, and uses a microscope based on reflected light or scattered light (in a bright field or a dark field) from the sample 7. Image capturing means 1 such as a camera
3 to be detected. Therefore, the optical system 1
The laser beam 12 focused by 4 is irradiated so as to scan on the back surface of the sample 7, and the laser beam from the wiring pattern of the multilayer wiring layer 71 (which clearly shows the wiring pattern of the lower layer) passes through the thinned substrate 73. A microscope image is obtained by the optical system 14, and the obtained laser microscope image is picked up by the image pickup means 13 and input to the computer 200 via a signal processing circuit (not shown). The computer 200 outputs the laser microscope image 100b input from the imaging unit 13 to the monitor 100 or the like. At this time, the laser microscope image 100b from the back surface may be inverted so as to be easily compared with the secondary charged particle image 100a from the front surface. Conversely, the secondary charged particle image 100a on the surface may be inverted.

The simplest way to focus on the sample (object) 7 is to move the stage 6 up and down in the laser optical axis direction (Z direction). When the ion beam 3 is moved up and down, the focal point of the ion beam 3 is slightly shifted. Therefore, manual adjustment and automatic adjustment of the ion optical system 4 according to the Z movement amount are performed as necessary. The intersection of the optical axis of the ion beam 3 and the sample 7 is made substantially coincident with the optical axis of the laser beam 12 traveling from the end of the optical system 14 toward the sample 7 (preferably within 1 μm, but not limited thereto). The processing position (processing position) of the ion beam 3 on the upper surface (in FIG. 1) of the
), That is, the optical system 1 by the laser beam 12 on the back surface
4 so as to be within the field of view. However, for example, the setting of the processing position by the ion beam 3 with respect to the lower wiring on the screen of the monitor 100 is based on the laser microscope image 100b from the back surface.
0 is a secondary charged particle image 100a and a laser microscope image 1
00b (the amount of deviation between the optical axis of the ion beam 3 and the optical axis of the laser beam 12) or the common coordinate system of the stage 6 is corrected so as to eliminate this amount of deviation. Good. Thereby, the computer 200 is based on the laser microscope image 100b showing the wiring pattern from the back surface (particularly, the lower wiring pattern is clearly shown).
The processing position (including the processing area) of the ion beam 3 corrected for the secondary charged particle image 100a can be set. In FIG. 1, the laser oscillation source 11 and a part of the optical system 10 are arranged outside the sample chamber 5, but may be installed inside the sample chamber 5.

Further, monitoring of the processing position by the ion beam 3 will be described with reference to FIG. FIG. 3 shows a semiconductor cross section during processing at an early stage and a late stage of processing,
Monitor image (laser microscope image) obtained from the processing bottom 1
FIG. 10B is a diagram showing an example corresponding to 00b. Ion beam 3
The computer 200 displays and observes the laser microscope image 100b on the monitor 100 in order to confirm the drilling position on the target wiring. At this time, 2
The image of the drilling position observed in the next charged particle image 100b is offset-corrected (shift-corrected), and the laser microscope image 10 is corrected.
0b may be displayed. Thereby, the drilling position from the surface of the lower wiring pattern is observed. Further, in the early stage of processing, an image 82 indicating a processing bottom surface is gradually displayed on a laser microscope image 100b showing a wiring pattern (particularly, a lower wiring pattern is clearly shown), and an image 83 of the wiring and an image of the processing bottom surface are gradually displayed. With 82, it is possible to monitor the amount of displacement of the drilling position and the like. If the displacement of the hole bottom can be confirmed during the processing, the computer 200 issues a processing interruption command to the control device 15 to interrupt the processing, and the secondary charged particle image 100a
Control command for the positional deviation correction command of the sequential machining position with respect to
5, the processing position can be corrected by the ion beam 3. Note that the position shift correction command is transmitted to the monitor 10.
It can also be created by using an electron beam, a cursor line or the like on the screen 0. The computer 200
Can automatically generate a position shift correction command by performing image processing.

If the semiconductor device cannot be processed for positional deviation correction during the processing, it is necessary to correct it again from the beginning. When the ion beam 3 is a Ga ion beam, Ga having a high reflectance is implanted into SiO ₂ of the uppermost layer and the interlayer insulating film, so that the position can be easily confirmed. On the other hand, during processing, the computer 20
For example, when the focus control signal is output to the stage 6 and the focus of the laser beam 12 is sent to the stage 6, an image indicating the processing bottom surface is captured by the imaging unit 13, and the captured image is input to the monitor 100, for example. Can also be observed. At this time, when the stage 6 is moved in the Z direction, the focal depth of the ion beam is usually 200 to 3
Since it is as deep as 00 μm, there is no problem with defocus,
Since the ion beam 3 may be displaced,
It is desirable to temporarily stop the ion beam 3. Then, at the end of processing, the image 84 of the processing bottom surface by the ion beam can be clearly confirmed as the laser microscope image 100b, and based on the observation of the end point due to the change in the wiring image of the processed portion and the image processing by the computer 200. The end point can be automatically detected. When the end point is recognized by observation, the signal at the end point is input to the computer 200 using an input means such as a switch or a keyboard.
Must be entered.

As described above, it is possible to perform the cutting processing of the lower layer wiring and the connection processing of the lower layer wiring with other wirings by using the ion beam 3. Connection by additional wiring between desired wirings buried as a multilayer wiring layer is as follows:
A desired wiring is exposed by drilling with an ion beam 3 (window opening processing), and a metal material is deposited in the hole by ion beam CVD in a metal material gas atmosphere to form plugs connected to the wiring. On the uppermost insulating film by ion beam CVD. Similarly to this, an electrode pad is pulled out from a wiring in a lower layer by opening a window by sputtering using an ion beam 3 and forming a local conductive film on a plug and an uppermost insulating film connected to the plug by CVD. As a result, this electrode pad can be used as a pad for mechanical probing or an EB tester.

Next, a description will be given of an embodiment in which the laser microscope image 100b is used for detecting the end point of wiring cutting and window opening processing. That is, the control of the end point of the wire cutting by the computer 200 is performed by the laser microscope image 1 displayed on the monitor 100.
00b, the image 85 of the wiring residual film of the processed portion disappears,
Observing that the image 84 of the bottom of the machined hole was completely alive,
At that time, a signal for stopping the processing of the ion beam 3 is input to the computer 200 by using the input means, and the computer 200 issues a processing stop command to the control device 15 to activate the blanking electrode and thereby perform the processing by the ion beam 3. This is done by stopping. In addition, the computer 200 performs image processing on the laser microscope image 100b captured by the imaging unit 13 so that the image 85 of the wiring residual film of the processed portion disappears, and the image 84 of the processed hole bottom is completely restored. It is also possible to automatically detect that the processing has been performed, and issue a processing stop command to the control device 15 based on the detected signal to activate the blanking electrode to stop processing by the ion beam 3. Further, the control of the end of the processing in the case of the window opening processing (end point control) is based on the laser microscope image 100b displayed on the monitor 100, when the wiring image 85 of the processed part starts to disappear by the bottom image 84, Alternatively, the operator immediately observes the disappearance of the wiring image 85 of the processed portion, inputs a signal for stopping the processing of the ion beam 3 to the computer 200 using the input means at that time, and the computer 200 instructs the control device 15 to stop the processing. This is performed by issuing a command and operating the blanking electrode to stop (end) processing by the ion beam 3. Further, the computer 200 performs image processing on the laser microscope image 100b captured by the imaging unit 13 so that the image 85 of the wiring of the processed part starts to disappear by the bottom image 84, or Image 85
It is also possible to automatically detect immediately after the disappearance of, and issue a processing stop command to the control device 15 based on the detected signal to operate the blanking electrode to stop (end) processing by the ion beam 3. .

If the processing is terminated immediately after the wiring image 85 disappears, the wiring is cut, but the cross section of the wiring is exposed. A metal film can be formed by ion beam CVD (in the case of film formation using a metal gas and an ion beam, the film forming speed is usually higher on the side wall of the processed hole than on the bottom of the processed hole), and as a result, cutting is performed. Plugs connected to the formed wiring can be formed. Next, an embodiment in which the processing end point is determined using the mechanical prober 20 will be described. That is, as shown in FIG. 1, a mechanical prober 20 is set in the sample chamber 5, and the current of the ion beam 3 flowing through the wiring is measured by mechanical probing to the wiring. The computer 200 calculates the current based on the measured current. Thus, the processing end point can be determined. For example, a point in time when the current by the ion beam 3 starts to flow significantly is determined as the end point of the window opening processing. Mechanical prober 20
Preferably has an XYZ drive mechanism and is mounted on the stage 6, but is not limited to this. By the way, the mechanical probing to the wiring is performed by contacting a desired electrode 90 on the sample 7 with the mechanical prober 20 or a wiring pattern previously exposed by processing using the ion beam 3. At this time, the computer 200 monitors the relative position between the mechanical probe 20 and the pattern image of the electrode 90 of the sample 7 based on the secondary charged particle image detected by the charged particle detector 8 by irradiating the ion beam 3. 100
Can be observed by displaying it on the display, and as a result, the positioning of the mechanical probe 20 becomes possible.

According to the embodiment described above, it is possible to cope with a reduction in the processing size due to the narrow pitch and an increase in the wiring depth. Further, by monitoring with a laser microscope image from the back surface, information such as a positional shift of the bottom of the processing hole and a short circuit with an adjacent wiring can be obtained, and the quality of the correction processing can be determined on the spot. Further, in the computer 200, if a laser microscope image by the laser beam 12 is used in combination with an end point signal that can be determined based on a change in the secondary charged particle signal detected by the charged particle detector 8,
The reliability of the determination of the end point can be improved.
By installing an emission spectroscope (not shown) and capturing the emission spectrum of the laser by the emission spectroscope,
The computer 200 can also monitor the irradiation status of the ion beam 3. In the above description, the case where the sample 7 is a semiconductor device and the sample 7 is mounted on the stage 6 so that the surface on which the wiring layer is formed is irradiated with the ion beam 3 has been described. It may be mounted on the stage 6 so as to irradiate the surface on which the ion beam 3 is irradiated. In this case, it is possible to perform a drilling process or a wiring cutting process by the ion beam 3 through a substrate such as Si. In the above description, the ion beam column 1 is mounted above the sample chamber 7, and the laser beam 1
2, the laser beam 12 can be introduced from above the stage 6 and the ion beam column 1 can be installed below the sample chamber 5.

After the wiring correction and the measurement pads are formed by cutting the wiring and connecting the wirings by the above-described apparatus and procedure, another apparatus such as an LSI tester, an EB tester,
By performing logic debugging using a manual prober or the like and reflecting the result in the design data and manufacturing process of the next lot, the development and manufacturing period of a semiconductor device having multilayered and narrow pitch wiring layers can be shortened.

Next, an embodiment in which failure analysis other than wiring correction is performed simultaneously will be described with reference to FIG. FIG.
FIG. 3 is a diagram for explaining a failure analysis using a laser beam according to the present invention. FIG. 4A is a schematic diagram showing an actual wiring defect. The mechanical prober 20 makes contact with a desired electrode 90 of the sample 7 and a wiring pattern previously exposed by the processing using the ion beam 3. Therefore, when the laser beam 12 is irradiated while scanning from the Si substrate side, by irradiating the lower wiring of the wiring layer 71 through the substrate 73, the lower wiring material is excited, and as a result, a current flows. This change in current is detected by the mechanical prober 20. And
The computer 200 generates a contrast image (current signal converted image by laser beam scanning) corresponding to a current change detected by the mechanical prober 20 using two-dimensional scanning of the laser beam 12 as two-dimensional coordinates as shown in FIG. 95 can be created and output to and displayed on the monitor 100 or the like. In addition, by irradiating the laser beam 12, the resistance is changed by locally increasing the temperature of the wiring material of the lower layer, and the resulting current / voltage change is detected by the mechanical prober 20. As shown in FIG. 4B, a contrast image having two-dimensional scanning of the laser beam 12 as two-dimensional coordinates can be created and output on the monitor 100. The information 95 of the contrast image shown in FIG. 4B displayed on the monitor 100 and FIG. 4 inputted to the computer 200 by an input means (a recording medium or a network connected to a CAD system).
CAD of the sample 7 displayed on the monitor 100 shown in FIG.
By analyzing (comparing with) the data information 96 and the like, the position of an abnormal portion of the wiring (a defective portion in a state of disconnection or near disconnection or a defective portion in a state of short circuit or near short circuit) can be determined using a mouse or the like. It can be specified by specifying. The computer 200
Extracts the difference image between the information 95 of the contrast image shown in FIG. 4B and the CAD data information 96 of the sample 7 shown in FIG. 4C, and calculates the coordinates of the end of the extracted difference image. By doing so, it is also possible to automatically calculate the position information of the abnormal part of the wiring. The computer 200 converts the position of the abnormal portion of the wiring specified and specified or automatically calculated on the monitor 100 into the coordinate system of the ion beam detected by the charged particle detector 8, and It is possible to specify the position of the abnormal portion of the wiring to the control device 15 that controls the optical system (particularly, the deflection electrode) 4. The controller 15 controls the ion optical system 4 based on a control command from the computer 200 to directly repair the defective portion of the wiring with the ion beam 3 (in the case of a short circuit, it can be directly repaired by cutting the wiring, and in the case of a disconnection defect, it can be broken). It can be directly repaired by connecting the plugs of the wirings via the top layer.) Or indirectly (such as inputting a signal from another wiring or forming a bypass additional wiring).
Perform repairs. Further, the result of the repair can be verified by the analysis method using the laser beam 12 described above.
At this time, in-situ processing by the ion beam 3 is performed.
As a monitor, a change in current or voltage signal detected from the mechanical prober 20 may be used.

According to the embodiment described above, the time required for trial and error in failure analysis can be reduced, and the product development period and cost can be reduced. In FIG. 1, the mechanical prober 20 is arranged so as to make contact with the mechanical prober 20 from the surface where the ion beam 3 irradiates the sample 7.
0 may be arranged and positioning may be performed based on a laser microscope image. Note that in this embodiment, an ion beam may be substituted for an electron beam. At this time, since processing cannot be performed with an electron beam, a means (for example, a gas nozzle) for supplying a reactive gas to an electron beam irradiation unit to accelerate the processing is required.

(Embodiment 2) A second embodiment of a charged beam processing apparatus and method for performing failure analysis, defect correction, and the like of a semiconductor device or the like according to the present invention will be described. FIG. 5 is a diagram showing a second embodiment of the failure analysis device according to the present invention. The second embodiment is similar to the first embodiment.
It is almost similar to the embodiment in which the laser optical system is replaced with an electron optical system. First, the ion beam column 1 is arranged below the sample chamber 5. The details are the same as in the first embodiment. On the other hand, an electron beam irradiation device (an electron microscope, an EB tester, an electron beam assisted etching device, etc.) is mounted above the sample chamber 5. The difference from the ion beam irradiation device is the configuration inside the electron beam column 30. An electron beam 32 is emitted from an electron source 31 installed in an electron beam column 30 and focused by an electron optical system 33 to control scanning and non-irradiation. The electron source 31 is a thermionic emission type (tungsten hairpin filament or lanthanum hexaboride point cathode), a field emission type, or the like. The acceleration voltage of the electron beam 32 usually varies from several hundred V to several hundred kV, and the current of the electron beam 32 varies from several pA to several tens μA. Although the beam diameter of the electron beam 32 is focused to about 1 nm, the beam diameter may be changed according to the application. The electron optical system 33 includes, for example, an extraction electrode, an acceleration electrode, a stigma deflection coil, an electrostatic lens,
It is composed of a magnetic lens and the like. The control device 98 controls the electron optical system (extraction electrode, acceleration electrode, stigma deflection coil, electrostatic lens, magnetic field lens, etc.) 33 and the electron source 31 and also deflects the amount of electron beam deflection provided to the stigma deflection coil and the like. Electron beam acceleration voltage, electron beam current,
Data such as the beam diameter of the electron beam is stored in the computer 200
To provide. In the case of an accelerated electron beam irradiation apparatus, since secondary ions are hardly emitted from the sample 7,
Secondary electrons are detected by the charged particle detector 34, input to the computer 200, image-processed in the computer 200, and displayed on the monitor 100. In the case of a sample having an insulating surface, the electron beam irradiator accelerates so that the balance between the incident electrons and the secondary electrons to be emitted substantially matches, using the fact that the amount of secondary electrons emitted varies with the acceleration voltage. A method of suppressing the charging of the sample 7 by observing the voltage at about 1 kV or less is often adopted. However, when the acceleration voltage is reduced, the resolution of the electron beam is inevitably reduced. Therefore, in order to prevent electrification while maintaining high resolution, the antistatic means 9 for irradiating a charged beam or light having a wavelength that excites the surface of the insulator to make it conductive (such as ultraviolet light in the case of SiO ₂ ) is used. Mount as required. FIG. 5 shows a case where local processing of the ion beam 3 is performed from the back surface of the sample 7 (semiconductor), that is, the surface of the diffusion layer. As in the first embodiment, by performing preliminary processing such as thinning of the sample 7 before mounting it on the stage 6, the ion beam processing time can be reduced.

In the following, for example, a case will be described in which the processing of the ion beam 3 is a boring process 106 on the target wiring of the sample 7. FIG. 6 is a diagram for explaining an example of performing a failure analysis using an electron beam in the second embodiment. When the upper surface of the sample 7 of the semiconductor device is scanned with the electron beam 32, a change in the secondary electron emission rate according to the potential state of the wirings 101 and 102 appears, and this is detected by the charged particle detector 8 and transmitted to the computer 200. The image can be input and processed by the computer 200 to be displayed on the monitor 100. As a result, the exposed electrode and the wiring 1 covered with the passivation film 104 are formed.
01 and 102 can be monitored. If necessary, the CAD data can be imported into the computer 200 and compared on the screen. For example, in order to monitor the process of the ion beam 3 to the lower target wiring 103, an area 105 including a portion where a signal change can be obtained by the process, such as the wirings 101 and 102 that are electrically connected to the lower target wiring 103, is formed. Scanning is performed with the electron beam 32. For example, when the hole 103 is cut by the ion beam 3 to cut the wiring 103, when the wirings 101 and 102 near the upper surface of the sample 7 connected to the wiring are observed by the electron beam 32, an electron beam image 110 before the cutting processing is obtained. can get. When the processing into the ion beam 3 proceeds and reaches the wiring 103, the current of the ion beam 3 flows into the wiring 103, and the electron beam image of the target wiring portion changes. Here, at least the ion beam 3 is
It can be confirmed that the region 105 including No. 3 is being processed.
When the processing is further advanced and the wiring is cut, a change in the electron beam image can be confirmed again as the electron beam image 120, and thereafter, the computer 20 is input using input means (not shown) or the like.
By inputting 0, a processing stop command signal can be input from the computer 200 to the control device 15 to stop the ion beam processing. When it is desired to monitor that this cutting process does not cause a short circuit to the adjacent wiring, for example, on the monitor screen, an electron beam image related to the adjacent wiring is obtained in the first setting of the irradiation area of the electron beam 32. The observation region using the electron beam may be set in the computer 200 by specifying the observation region using an electron beam, a cursor line, or the like. The computer 200 controls the deflection electrode (not shown) of the electron optical system 33 or the stage 6 by providing the control device 98 with data on the set observation region by the electron beam. The electron beam image is detected and obtained by the charged particle detector 34. If no image change is observed in the electron beam image, it can be confirmed that there is no short circuit. At this time, during the irradiation of the ion beam, noise is generated due to the influence of the charge on the wiring, which may affect the image monitor. However, if at least the ion beam 3 is not irradiated, the short monitor can be performed. Therefore, it is also effective to irradiate the ion beam intermittently and capture an electron beam image during the non-irradiation.
Of course, in the detection of the processing end point, the reliability can be improved by using both the change in the electron beam image and the determination based on the change in the signal from the charged particle detector 8 due to the irradiation of the ion beam.

By mounting the mechanical prober 20 on the stage 6, the function as an EB tester can be extended. A desired electrode pad 90 or an electrode pad is previously pulled out from the lower wiring by ion beam processing (ion beam CVD) or the like, and probing is performed on these with a mechanical prober 20 to apply a voltage and introduce a current to change the operating state of the semiconductor. By simulating, the electron beam 3
The computer 200 can also obtain a potential contrast image detected by the charged particle detector 34 by the second scanning irradiation. In addition, by mounting a gas nozzle (not shown) and irradiating the electron beam 32 while supplying a reactive gas from the nozzle, the function expansion as a processing tool can be realized. Further, by using a metal material gas instead of the reactive gas, film formation by the electron beam 32 is also possible. In addition, during the failure analysis process,
Utilizing the function as a tester, narrowing down defective parts,
A method of verifying this by making full use of the processing and film formation using the ion beam 3 and the EB described above is also possible. In FIG. 2, it is also easy to perform mechanical probing directly on the upper surface of the sample 7 using the mechanical prober 20 to monitor the process by the ion beam 3 from the back surface.

With respect to the mechanical prober 20, it is expected that the tip of the probe needle will be worn out or damaged due to malfunction, and in this case, it is necessary to open the sample chamber to the atmosphere, which lowers the working efficiency. As a countermeasure, a spare probe is provided in the sample chamber 5, and a mechanism for remotely exchanging the probe needle can reduce downtime of the apparatus. This exchange mechanism retreats a broken probe needle by a manipulator such as a robot as shown in FIG. 7 and sets a new probe needle 150, and FIG.
As shown in (1), a method in which a plurality of probe needles 151 are radially set on a disk 152 in a set of mechanical probers 20 in advance, the disk 152 is rotated, and only a desired probe needle is brought into contact, may be considered. is not. In any of the embodiments, means for supplying a reactive gas (eg, chlorine, xenon difluoride, iodine, bromine, etc.) is provided, and the reactive gas is supplied onto the sample 7 through a nozzle to process. It is also possible to apply to charged beam gas assisted etching (ion beam assisted etching, electron beam assisted etching) for increasing the speed. Further, as described above, the deposition gas (for example, tungsten hexacarbonyl,
By providing a means for supplying TEOS or the like via a nozzle and supplying the same, it is also possible to apply the present invention to charged beam CVD for forming a desired conductive film or insulating deposited film on the sample 7.

[0033]

According to the present invention, it is possible to correct a narrow pitch and a deep wiring, which has been difficult in the past, in a wiring correction and a failure analysis using a charged beam such as a focused ion beam or an electron beam, and the yield of the charged beam processing is improved. The effect which can improve is produced. Further, according to the present invention, by improving the reliability of the failure analysis by monitoring the repair process and eliminating rework, the TAT (tact time) of the failure analysis is improved.
, And the effect of shortening the development and manufacturing period of the semiconductor and reducing the cost can be achieved.

[Brief description of the drawings]

FIG. 1 is a diagram showing a first embodiment of a charged beam processing apparatus and method for performing failure analysis, defect correction, and the like of a semiconductor device and the like according to the present invention.

FIG. 2 is a cross-sectional view for describing a case where the first embodiment shown in FIG. 1 is applied to a semiconductor device.

FIG. 3 is a diagram for explaining a semiconductor cross section during processing in each of an early stage and a late stage of processing by an ion beam, and a monitor image from a processing bottom surface.

FIG. 4 is a diagram for explaining a schematic diagram of an actual wiring defect for detecting and specifying a wiring defect position, a current signal converted image by laser beam scanning, and CAD data.

FIG. 5 is a diagram showing a second embodiment of a charged beam processing apparatus and method for performing failure analysis, defect correction, and the like of a semiconductor device and the like according to the present invention.

6 is a cross-sectional perspective view for describing a case where the second embodiment shown in FIG. 5 is applied to a semiconductor device, and a diagram showing a monitor screen display before and after cutting processing.

FIG. 7 is a perspective view showing one embodiment of a mechanical prober according to the present invention.

FIG. 8 is a perspective view showing another embodiment of the mechanical prober according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Ion beam column, 2 ... Ion source, 3 ... Ion beam, 4 ... Ion optical system, 5 ... Sample chamber, 6 ... Stage, 7
... sample (semiconductor device), 8 ... charged particle detector, 9 ...
Antistatic means, 10 laser microscope, 11 laser oscillation source, 12 laser beam, 13 imaging means, 14 optical system, 15 control device, 20 mechanical prober, 30
... Electron beam column, 31 ... Electron source 31, 32 ... Electron beam, 33 ... Electronic optical system, 71 ... Wiring layer, 72 ... Element isolation film, 74 ... Diffusion layer, 80 ... Hole, 73 ... Substrate such as Si, 8
4: image of processed bottom hole, 85: image of wiring residual film, 90: electrode, 95: current signal converted image by laser beam scanning,
Reference numeral 96: CAD data, 98: control device, 100: monitor, 100a: secondary charged particle image, 100b: laser microscope image, 101, 102, 103: wiring, 106: hole,
110: electron beam image before cutting, 120: electron beam image after cutting, 200: computer.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Junzo Higashi 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside the Hitachi, Ltd.Production Technology Laboratory (72) Inventor Toshinobu Mizumura 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Address Co., Ltd.Production Technology Laboratory, Hitachi, Ltd. (72) Inventor Norimasa Nishimura 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture 16 in the Hitachi, Ltd. Device Development Center Co., Ltd. (72) Inventor Hidemi Koike 882, Ma, Hitachinaka-shi, Ibaraki F-term in the Measuring Instruments Division, Hitachi, Ltd. 2G051 AA51 AB02 BA06 BA08 BA10 BA20 CA04 CB01 CB05 DA07 EA08 FA01 4M106 AA01 AA02 AA10 AA11 AA12 AC12 BA01 BA03 BA05 CA02 CA04 CA05 CA08 CA10 CA16 CA39 CA51 DE02 DE03 DE04 DE20 DE21 DH11 DH24 DH32 DH37 DH60 DJ04 DJ05 DJ07 DJ17 DJ18 DJ19 DJ20 DJ33 DJ38 DJ40 5C033 UU03 UU04 UU10 5C034 AA02 AA03 AA09 AB01 AB04 AB09

Claims (15)

[Claims] 1. A sample chamber in which a stage on which a sample is mounted is installed, and a charged beam generated by a charged beam source is focused by a charged beam optical system and irradiated from one side of the sample to process the sample. Alternatively, charged beam processing means for performing charged beam processing such as film formation, and irradiating a laser beam generated from a laser oscillation source from the other surface side of the sample via a laser optical system to detect the charged beam processing A charged beam processing apparatus comprising: a detection unit. 2. The apparatus according to claim 1, wherein said detecting means includes an imaging means for detecting an optical image composed of reflected light or scattered light from the other surface of said sample based on the irradiation of the laser beam. A charged beam processing apparatus according to item 1. 3. The charged beam processing apparatus according to claim 1, wherein said detecting means includes probing means for detecting an electric signal by a mechanical probe based on laser beam irradiation. 4. A sample chamber in which a stage on which a sample is mounted is installed, and a first charged beam generated by a first charged beam source is focused by a first charged beam optical system to be on one side of the sample. And a charged beam processing means for performing charged beam processing such as processing or film formation on a sample, and a second charged beam generated by a second charged beam source and different from the first charged beam. A charged beam processing apparatus, comprising: a detector configured to irradiate the sample from the other surface side and detect the charged beam processing. 5. The charged beam processing apparatus according to claim 4, wherein said detecting means includes potential distribution detecting means for detecting a potential distribution of said sample based on irradiation of a second charged beam. 6. A charged beam processing apparatus according to claim 1, wherein said detecting means includes probing means for detecting an electric signal by a mechanical probe based on irradiation of a second charged beam. 7. A sample chamber in which a stage on which a sample is mounted is installed, and a charged beam generated by a charged beam source is irradiated from one surface side of the sample to perform charged beam processing such as processing or film formation on the sample. And a probing detecting means for detecting the charged beam processing from the sample by a mechanical probe. 8. A charged beam generated by a charged beam source is focused by a charged beam optical system and irradiated from one side of a sample placed in a sample chamber to charge the sample for processing or film formation. A charged beam processing step of performing beam processing; and irradiating a laser beam generated from a laser oscillation source from the other surface side of the sample via a laser optical system, and the other surface of the sample based on the irradiation of the laser beam. A charged-beam processing method, comprising: picking up an optical image composed of reflected light or scattered light from a side by an imaging means to detect the charged-beam processing. 9. A charged beam generated by a charged beam source is focused by a charged beam optical system and irradiated to a local region from one surface side of a sample set in a sample chamber, and a desired charged beam is applied to the sample. A charged beam processing step of performing processing, and irradiating a laser beam generated from a laser oscillation source from the other surface side of the sample via a laser optical system, and laser induced by the sample based on the laser beam irradiation A detection step of detecting a change in an electric signal or a change in current or voltage with a mechanical probe to detect the charged beam processing. 10. A first charged beam generated by a first charged beam source is converged by a first charged beam optical system and irradiated to a local region from one surface side of a sample, and the sample is irradiated to a desired area. A charged beam processing step of performing charged beam processing of the above, irradiating from the other surface side of the sample a second charged beam different from the first charged beam generated in the second charged beam source, from the sample Detecting the charged beam processing by detecting the secondary charged particle signal of (1). 11. A first charged beam generated by a first charged beam source is converged by a first charged beam optical system and irradiated to a local area from one surface side of a sample, and the sample is irradiated with a desired beam. And a second charged beam different from the first charged beam generated by a second charged beam source by applying a voltage to the sample by a mechanical probe. From the other side of the sample,
A detection step of detecting a secondary charged particle signal from the sample to detect charged beam processing. 12. A charged beam process for converging a charged beam generated from a charged beam source by a charged beam optical system and irradiating a desired area from one surface side of a sample mounted in a sample chamber to perform a desired process. A charged beam processing method, comprising: detecting a change in an electric signal from the sample with a mechanical probe to detect charged beam processing. 13. A process in which a focused charge beam is irradiated to a region to be corrected from the upper surface side of a semiconductor device installed in a sample chamber or a region requiring local processing to identify a cause of a defect. A charged beam processing step; irradiating an energy beam from the lower surface side of the sample to detect a physical signal from the semiconductor device to detect a state of the charged beam processing; and a state of the detected charged beam processing. A condition correction of charged beam processing based on the above, or an analysis step of judging pass / fail of the semiconductor device. 14. A sample chamber held in a vacuum, a stage installed in the sample chamber, a sample holder for mounting a sample on the stage, and a three-dimensionally positionable manipulator mounted on the sample holder. A device for evaluating a sample in a vacuum, comprising: 15. A sample chamber held in a vacuum, a stage mounted in the sample chamber for mounting a sample, three-dimensional positioning for evaluating the sample is possible, and a plurality of probe needles are provided. An apparatus for evaluating a sample in a vacuum, comprising: a contact probe that can be arbitrarily extracted and replaced.