JP2000275680A - Reflective liquid crystal display device and display panel using the same - Google Patents

Abstract

(57) [Problem] To provide a reflection type liquid crystal display device using fine pixels in a display section. SOLUTION: The liquid crystal device includes a first substrate 31 on which pixels 1 are arranged in a matrix, a second substrate 51 opposed thereto and having a common electrode 131 formed thereon, and a liquid crystal layer sandwiched between both substrates.
On the first substrate 31, a plurality of semiconductor active elements 11 arranged in a matrix, an interlayer insulating film 61 deposited to cover the semiconductor active elements 11, and a plurality of semiconductor active elements 11 at a level higher than the scanning lines 5 and the signal lines 3 are provided. And a second common electrode 75 that is electrically connected to the common electrode 131 and has an opening 73 above the drain of each semiconductor active element 11, and is formed on the interlayer insulating film 61. A plurality of pixel electrodes 91 that are connected to the drains of the respective semiconductor active elements 11 through the interlayer insulating film 61 through the openings 73 and are separated for each pixel 11 and face the common electrode 131 via the liquid crystal layer E; Reflective liquid crystal display device including.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to an active matrix type liquid crystal display device in which a semiconductor active element such as a thin film transistor (TFT) or MIM is provided as a switching element for each pixel. In particular, it relates to a reflection type liquid crystal display device.

[0002]

2. Description of the Related Art In an active matrix type liquid crystal display device, a plurality of scanning line groups are arranged in a row direction, and a plurality of signal line groups are arranged in a column direction. Pixels are arranged at each intersection of the matrix of the scanning lines and the signal lines.
Each pixel includes a pixel electrode and a switching element connected to the pixel electrode. The pixel information of the active matrix type liquid crystal display device is on / off controlled by a switching element. Liquid crystal is used as a display medium.

[0003] As a switching element, MIM (Met
al-Insulator-Metal), three-terminal device,
In particular, a field effect thin film transistor (hereinafter, referred to as “TFT”) having a gate, a source, and a drain is used. In this specification, a current terminal connected to a pixel electrode is called a drain, and the other current terminal connected to a signal line is called a source. A unit cell including a pixel electrode and a thin film transistor is called a pixel, and a large number of pixels are arranged in a matrix.
An image is displayed by a display unit arranged in a shape.

Scan lines (gate lines) arranged in parallel to a row
Are connected to the gate electrodes of the thin film transistors corresponding to the corresponding rows. A signal line (source line) arranged in parallel to the column is connected to a source electrode of the thin film transistor corresponding to the corresponding column. A circuit for driving a scanning line is called a scanning line driving circuit, and a circuit for driving a signal line is called a signal line driving circuit. A circuit that drives the display unit, including the scanning line driving circuit and the signal line driving circuit, is generically called a peripheral circuit.

An active matrix type liquid crystal display device using a TFT as a switching element for each pixel electrode has a larger number of pixels than a simple matrix type liquid crystal display device having stripe-shaped parallel electrodes crossing each other on a pair of substrates. The screen is clear. In recent years, active matrix liquid crystal display devices have become mainstream as display devices such as display screens of personal computers and viewfinders of video cameras.

In this active matrix type liquid crystal display device, it is usually necessary to form a large number of pixel electrodes and thin film transistors on a transparent glass substrate. It is difficult to apply a silicon crystallization process by annealing at a high temperature to a transparent glass substrate. As a thin film transistor used for a liquid crystal display device, an amorphous silicon thin film transistor using amorphous silicon which can be formed even at a low temperature has been used.

However, the mobility of electrons and holes in amorphous silicon is as small as 1 cm 2 / Vs or less. In an amorphous silicon thin film transistor using amorphous silicon as a channel layer, high-speed switching operation is difficult. Therefore, a peripheral circuit chip separately formed on a normal single crystal silicon substrate is separately externally disposed on a glass substrate, or a flexible substrate on which the peripheral circuit chip is disposed is pasted on a glass substrate. Structure is adopted.

Further, a technique of polycrystallizing amorphous silicon by laser annealing has been used.

In an active matrix type liquid crystal display device, when a pixel electrode formed on a TFT substrate is a reflection electrode, a reflection type liquid crystal display device is constructed.

This reflection type liquid crystal display device does not require a backlight unlike the transmission type liquid crystal display device. Compared with a transmissive liquid crystal display device, lower power consumption, thinner, more compact, and lighter weight are possible.

The reflection type liquid crystal display device can be easily applied to a projection panel. When applied to a projection panel, it is possible to reduce the size and accuracy of the projection panel as compared with a transmissive liquid crystal display panel. An inexpensive optical system can be used. In addition, a projection panel using a reflection type liquid crystal display device can achieve ultra-high brightness. Since panel cooling is easy without light deterioration, reliability is high.

However, the conventional reflection type liquid crystal display device has the following problems.

1) Coupling problem Electrical coupling occurs between the reflective electrode and the signal bus line or the TFT. The display characteristics and display quality of the liquid crystal display device are degraded due to the flicker capacitance and the crosstalk capacitance.

2) The problem of crosstalk due to photocurrent In the case of a projection type liquid crystal display device, incident light from the counter substrate (second substrate) side passes through the gap between the reflective electrodes and the first substrate. Incident on the side. When light is irradiated onto the pixel TFT of the display unit, a display deterioration phenomenon such as crosstalk due to the photocurrent of the TFT is caused.

When light is irradiated on the TFT for the peripheral circuit,
The controllability of the pixel display deteriorates due to the influence of the leak current.

Since the reflection electrode of the reflection type liquid crystal display device is opaque as compared with the transmission type liquid crystal display device, the light shielding property is much better. However, in the case of a projection type panel in which the intensity of incident light is several million to several tens of million lux, the influence of light leakage cannot be ignored. For example, when the light intensity is 10 million lux, the aperture ratio is 80%, and the back surface reflectance is 1%, T
The intensity of light incident on the FT is 20,000 lux (10 million ×
0.2 × 0.01). The crosstalk amount reaches several tens mV.

3) The problem of the storage capacity of a small high-definition reflective panel In the case of a small high-definition reflective panel, the pixel pitch is
Since the pixel area is as small as about 50 μm to about 50 μm, a capacitor structure using a MOS gate of a TFT or a capacitor structure using an interlayer insulating film, which is generally adopted, has a size necessary to hold image information. It becomes difficult to make a storage capacity.

4) The problem of flattening the electrode contact region The effective reflectance of the electrode contact region due to the contact hole in the reflective electrode is low. In the contact hole portion and the tapered region around the contact hole portion, the flatness of the reflective electrode deteriorates. A domain region is generated due to disorder of liquid crystal alignment.

With the miniaturization of the reflective panel and the reduction of the pixel area, the ratio of the area of the contact region to the total area of the reflective electrode increases, and the effective reflectance of light at the reflective electrode decreases.

For example, the pixel pitch is 20 μm, the interval between the electrodes is 2 μm, the thickness of the flattening film is 2 μm, the diameter of the contact hole is 4 μm, and the taper angle of the side wall of the contact hole is 4 μm.
If the angle is set to 5 degrees, the ratio of the contact area to the area of the reflective electrode reaches 15.5%.

[0021]

SUMMARY OF THE INVENTION An object of the present invention is to provide a reflection type liquid crystal display device using fine pixels in a display section and a display panel using the same.

[0022]

According to one aspect of the present invention, there is provided a first substrate including a display unit in which a plurality of pixels are arranged in a matrix, and an entire surface arranged opposite to the first substrate. A second substrate on which a first common electrode is formed, and a liquid crystal layer sandwiched between the first and second substrates. The display portion of the first substrate is arranged in a matrix. A plurality of semiconductor active devices each having a source, a drain and a gate, an interlayer insulating film deposited so as to cover the semiconductor active devices, and a semiconductor active device formed in the interlayer insulating film and arranged in a row direction. A plurality of scanning lines connecting the gates of the elements, a plurality of signal lines formed in the interlayer insulating film and connecting the sources of the semiconductor active elements arranged in a column direction, and the plurality of scanning lines in the interlayer insulating film; Is formed to cover a plurality of pixels at a level above the signal line, A second common electrode which is electrically connected to the first common electrode and has an opening above the drain of each semiconductor active element; and a second common electrode formed on the interlayer insulating film, wherein the opening forms an interlayer insulating film. A reflective liquid crystal display device comprising: a plurality of pixel electrodes that penetrate and are connected to the drain of each semiconductor active element, are separated for each pixel, and face the first common electrode via the liquid crystal layer. Is done.

[0023]

Embodiments of the present invention will be described below with reference to the drawings. Referring to FIG. 1 to FIG.
A reflective liquid crystal display device according to the embodiment and a display panel using the same will be described.

FIG. 1 shows an example of a planar arrangement of a reflection type liquid crystal display device A in which a display section for displaying an image and peripheral circuits for controlling the display section are integrally formed on the same substrate. FIG. 2 shows a sectional structure of the reflection type liquid crystal display device A.

The reflection type liquid crystal display device shown in FIGS. 1 and 2 has a substantially rectangular display portion B for displaying an image, and a peripheral circuit C arranged around the display portion B and driving the display portion.
And

In the display section B, a plurality of pixels 1 are arranged in a matrix.

The display section B has a plurality of signal lines 3, 3,.
.. Indicate a plurality of scanning lines 5, 5, 5,.
・ ・ Runs in the line direction.

One pixel 1 has a pixel thin film transistor (hereinafter, referred to as “TFT”) having a source, a gate, and a drain.
That. ) 11, a liquid crystal cell 15, and a storage capacitor 17 are included. The signal line 3 is connected to the source S of the pixel TFT 11. The scanning line 5 is connected to the gate G of the pixel TFT. A liquid crystal cell 15 and a storage capacitor 17 are connected in parallel between the drain D of the pixel TFT 1 and the ground terminal GND.

As shown in FIG. 2, between a transparent first glass substrate 31 and a second glass substrate 51 (hereinafter, referred to as "first glass substrate" and "second glass substrate"). In
The liquid crystal material E is filled. The liquid crystal material is applied to both substrates 31, 5
It is sealed by a resin sealing material 41 interposed between the two. Note that, as the first glass substrate 31, an opaque substrate such as a Si substrate can be used instead of a transparent glass substrate.

On the second glass substrate 51, a common electrode which is normally fixed to the ground potential is formed.

On the display portion B of the first glass substrate 31, a pixel TF which is preferably a polycrystalline silicon TFT is provided.
T11, 11, and 11 are formed in an island shape. A peripheral circuit C is formed in the outer peripheral direction of the display unit. In the peripheral circuit C, polycrystalline silicon TFTs 21, 21, 21 are used as semiconductor active elements capable of operating at high speed.

An interlayer insulating film 61 is formed on the first glass substrate 31 so as to cover the TFTs 11 and 21.

A second common electrode 71 having a fixed potential is formed on the interlayer insulating film 61 on the entire surface of the display section B. The second common 71 has an opening 73 at a position corresponding to a contact hole described later. On the second common electrode 71, a planarization insulating film 81 is formed.

A contact hole 83 is formed through the interlayer insulating film 61 and the planarizing insulating film 81 at a position corresponding to the opening 73. A reflection electrode 91 for the pixel 1 is formed on the planarization insulating film 81 so as to cover the contact hole 83. The reflection electrode 91 is connected to the drain D of the pixel TFT 11 in the contact hole 83. On the reflective electrode 91, an alignment film 101 is formed.

On a second substrate 51 which is an opposite substrate, a color filter 121, a first common electrode 131 which is usually fixed to a ground potential, and an alignment film 141 are sequentially formed.

The fixed potential electrode 71 and the first common electrode 131
Are connected to a transfer electrode TE, and are set to a common fixed potential.

FIG. 3 is a plan view of the pixel TFT 11.

FIG. 3A shows a single gate type TFT. The single-gate type TFT 11 uses a polycrystalline silicon layer as a semiconductor layer. The polycrystalline silicon layer
First, an amorphous silicon layer is formed, and then the amorphous silicon layer is crystallized by a laser annealing method using an excimer laser or the like. The polysilicon layer is patterned to form an island-like polysilicon layer 27.

In the single-gate pixel TFT 11, the gate electrode G once crosses the polycrystalline silicon layer 27 via the gate insulating film, and defines a channel layer thereunder. At both ends of the polycrystalline silicon layer 27, a source region S and a drain region D are formed.

The gate electrode G is formed of Al-Nd and is shared with the scanning line 5.

The source electrode S on the source region and the signal line 3 are formed of Ti / Al / Ti and are electrically connected.

FIG. 3B shows a double gate type pixel TF.
This shows T11.

The double gate type TFT 11 has an inverted U-shaped channel layer 27 between the source and the drain. The channel layer 27 intersects the gate electrode G at two points in order to improve the controllability of the current flowing between the source and the drain. In a polycrystalline silicon TFT in which the influence of light incidence or the like is easily lifted, a leak current caused by light is reduced.

In the following embodiment, a pixel TFT
A liquid crystal display device using a double gate type TFT as 11 will be described as an example. It is also possible to use a single gate type TFT.

FIGS. 4 and 5 show a detailed sectional view and a plan view of a reflection type liquid crystal display device using the polysilicon TFT 11 according to the present embodiment.

FIG. 5 is a plan view of the reflection type liquid crystal display device A. FIG. 4 shows a cross section taken along line VI-VI of FIG.

As shown in FIG. 4, the first glass substrate 31
On top is SiO 2 to prevent impurity diffusion from the glass.
A substrate surface covering layer 23 composed of two films is formed. Polycrystalline silicon layer 27 is formed on substrate surface coating layer 23 in an inverted U-shape as described above.

An insulating film 61 is formed on the polycrystalline silicon layer 27.
Is deposited.

More specifically, the insulating film 61 includes a gate insulating film 61a formed on the polycrystalline silicon layer 27 and a first interlayer insulating film 61b formed on the gate insulating film 61a.
And a second interlayer insulating film 61c formed on the first interlayer insulating film 61b.

As shown in FIG. 5, the gate electrode G and the scanning line 5 are formed on the gate insulating film 61a.

A first interlayer insulating film 61b is formed to cover the gate electrode G and the scanning line 5. On the source region S and the drain region D, an interlayer insulating film 61b and a gate insulating film 61a
Is opened.

The source electrode / signal line 3 and the drain electrode 25 are provided on the first interlayer insulating film 61b so as to fill the contact holes. The signal line 3 is connected to the pixel TFT 1 via a signal line contact hole 33 penetrating the gate insulating film 61a and the first interlayer insulating film 61b.
1 source region. The drain electrode 25 is connected to the pixel TFT 1 via a signal line contact hole 33 penetrating the gate oxide film 61a and the first interlayer insulating film 61b.
1 drain region.

On the first interlayer insulating film 61b, a second interlayer insulating film 61c covering the signal line 3 and the drain electrode 25 is formed.
Are formed. On the second interlayer insulating film 61c, a second common electrode 71 that covers the entire display section is formed.

FIG. 6 shows a plan view of the second common electrode 71.

The second common electrode 71 includes a plurality of pixels 1,
It covers almost the entire surface of the display section B including 1, 1,... And the peripheral circuit C.

Since the potential of the second common electrode 71 is fixed, the pixel TFT existing under the second common electrode 71
An electrical shield is formed for the signal lines 11 and the signal lines 3.

As described above, the opening 73 is provided in a portion of the second common electrode 71 corresponding to the contact hole 83 for connecting the reflection electrode 91 and the drain electrode 25.

On the second interlayer insulating film 61c, a planarizing insulating film 81 made of polyimide is formed. The flattening film is a film having a function of compensating for irregularities on the underlying surface and forming a flat surface. The reflecting mirror formed on the flattened surface forms a flat reflecting surface. If there are irregularities on the reflecting surface of the reflecting mirror, the light reflected on the reflecting surface goes in various directions. Light reflected in a direction beyond the predetermined range cannot be used. The flattening of the complicated y-plane is effective for improving the utilization efficiency of the incident light.

On the flattening film 81, a reflection electrode 91 is formed. The reflection electrode 91 is connected to the drain electrode 25 via the contact hole 83, and can receive and accumulate an image signal supplied via the TFT 11.
On the reflective electrode 91, an alignment film 101 is formed.

On the second glass substrate 51 side, the color filter 121, the first common electrode 131 and the alignment film 141 are formed as described above.

The second common electrode 71 and the reflective electrode 91 both cover most of the area of the display section and have openings at different places. Since a double optical shield is formed with respect to the incident light from above, the light shielding property of the light incident on the first glass substrate 31 from the second glass substrate 51 is improved.

The second common electrode 71 held at a fixed potential
The storage capacitor 17 (see FIG. 1) is formed by the reflection electrode 91 facing the second common electrode 71 and the flattening insulating film 81 sandwiched between the electrodes 71 and 91.

The storage capacitor 17 is formed between the reflective electrode 91 and a portion of the second common electrode 71 except for the opening 73 via a flattening film 81. The pixel TFT 11 is arranged below the storage capacitor 17. In the region of one pixel 1, the pixel TFT 11 and the storage capacitor 17 can be efficiently arranged.

The second common electrode 71 forms a fixed potential surface between the reflective electrode 91 and the pixel drive wiring such as the signal line 3. Therefore, the reflective electrode 91 and the pixel drive wiring such as the signal line 3 are electrically shielded, and interference such as crosstalk is reduced.

Hereinafter, an outline of a manufacturing process of the liquid crystal display device A according to the first embodiment will be described. First, the outline of the manufacturing process of the structure on the first glass substrate 31 will be described.

1) A base silicon oxide film 23 is grown on a first glass substrate 31.

2) The thickness is 50 n by the plasma CVD method.
An amorphous silicon layer of m is deposited on the underlying silicon oxide film.

3) A wavelength of 308 nm using XeCl as a light source
The polycrystalline silicon layer 27 is formed by crystallizing the amorphous silicon layer using the excimer laser described above.

4) After processing the polycrystalline silicon layer 27 into an island shape, a silicon oxide film 61a as a gate insulating film is deposited to a thickness of 120 nm by a plasma CVD method.

5) An Al—Nd film is deposited as a gate electrode / wiring on the gate insulating film, and the gate electrode and the scanning line are patterned by wet etching using, for example, a mixed acid etchant.

6) N-type impurities and p-type impurities are doped on predetermined source and drain regions on the polycrystalline silicon film 27, and impurity ions are activated by laser irradiation.

7) A first interlayer insulating film 61b (silicon nitride or silicon oxide) is deposited, for example, to a thickness of 500 nm by a plasma CVD method.

8) A contact hole is opened through the first interlayer insulating film 61b and the gate insulating film 61a thereunder. Through this contact hole, Ti / Al / Ti
A stack is deposited and patterned to form a source wiring and a drain electrode 25 which also serve as the source electrode S and the signal line 3.

9) A silicon nitride film, for example, having a thickness of 400 nm is formed on the first interlayer insulating film as the second interlayer insulating film 61c by plasma CVD so as to cover the source wiring and the like.

10) Ti is deposited on the second interlayer insulating film 61c.
A film is deposited, for example, to a thickness of 200 nm. Al may be used instead of Ti. An opening 73 is formed by dry etching using a resist mask and a chlorine-based gas,
The second common electrode 71 is formed.

11) A flattening film 81 made of polyimide is formed on the second common electrode 71 and the second interlayer insulating film 61c. Instead of the polyimide flattening film, a silicon nitride film formed by plasma CVD can be used.

12) The planarization film 81 and the second
In the opening 73 penetrating through the interlayer insulating film 61c and exposing the upper drain electrode 25, a contact hole 83 is opened by dry etching using a fluorine-based gas.

13) An Al reflective electrode 91 is deposited on the flattening film 81 so as to fill the contact hole 83.
Pixel 1 by dry etching using chlorine-based gas
The reflection electrode 91 is separately processed on the surface to form an electrically independent reflection electrode.

14) An alignment film 101 is formed on the reflection electrode 91.

The structure on the second glass substrate 51 is formed as follows.

1) On the second glass substrate 51, a thickness of 1.
A red color resist film of 5 μm is applied, and a red color filter is formed on the display section B by a normal photoresist process including drying, exposure, and development. Through the same process, a green color filter and a blue color filter are formed.

2) A flattening film made of resin is formed to flatten the unevenness formed by the color filter or the like.

3) An ITO film having a thickness of 1000 Å is formed by a sputtering method, and then a common electrode 131 is formed by a predetermined pattern forming process.

4) In order to cover the first common electrode 131,
An alignment film 141 of polyimide or the like is formed.

Through the above steps, the structure on the second transparent substrate 51 side is completed.

The process of laminating the first glass substrate 31 and the second glass substrate 51 manufactured as described above to form the reflection type liquid crystal display device A will be described below.

1) The alignment films 101 and 141 formed on the first glass substrate 31 and the second glass substrate 51 are heated and cured as required.

2) A rubbing step of rubbing the alignment films 101 and 141 in a certain direction with a buff cloth is performed. By this step, an alignment structure is formed on the alignment films 101 and 141.

3) On the first glass substrate 31, a spherical spacer such as a polymer-based, glass-based, or silica-based spacer is dispersed.

4) Peripheral circuit section C of first glass substrate 31
Further, a sealing resin is applied to the outer peripheral portion by a dispenser.

5) The second glass substrate 51 is placed on the first glass substrate 31, and the sealing resin is cured by applying heat and pressure. The first glass substrate 31 and the second glass substrate 51 are adhered to each other with the sealant 41. The spherical spacer keeps the distance between the two substrates at a predetermined value.

6) The liquid crystal material E is injected from a liquid crystal injection port (not shown) into a liquid crystal accommodating space formed between the first glass substrate and the second glass substrate, and then the liquid crystal injection port is sealed.

FIG. 7 shows a liquid crystal panel using the reflection type liquid crystal display device according to the present embodiment.

FIG. 7A shows a schematic configuration of a reflective direct-view panel.

This reflection type direct-view panel includes a structure in which a polarizing plate PL is arranged on the second glass substrate 51 side of the reflection type liquid crystal panel A. As the liquid crystal material E used for the reflective liquid crystal panel A, a vertically aligned liquid crystal is preferably used.

FIG. 7B shows a three-panel projection type liquid crystal panel.

The projection type liquid crystal panel has reflection type liquid crystal display devices A1, A2 and A3 corresponding to R (red), G (green) and B (blue) on the back and both sides of a cross dichroic prism (CDP). Is arranged.

Cross dichroic prism (CDP)
A wedge prism (WP) is arranged in front of the. A light source L for irradiating light to the reflective liquid crystal display devices A1, A2, A3 corresponding to R (red), G (green), and B (blue) is provided.

The light emitted from the light source L is R (red),
Light is incident on reflective liquid crystal display devices A1, A2, and A3 corresponding to G (green) and B (blue).

The reflected light reflected from each of the reflective liquid crystal display devices A1, A2, A3 is refracted by a wedge prism (WP), and the incident light and the optical path are separated. The reflected light is
An image is formed on a screen S by an optical system device LS including a lens.

In the reflection type liquid crystal display device according to the present embodiment, the pixel TFT included in the pixel and the storage capacitor can be efficiently arranged, and a fine pixel is formed. In particular,
In the reflection type direct-view panel and the projection type liquid crystal panel, since the size of the panel is required to be reduced, the reflection type liquid crystal display device according to this embodiment is preferably used.

FIG. 8 shows a modification of the reflection type liquid crystal display device according to the first embodiment. FIG. 8 is a drawing corresponding to FIG. 4 showing a cross-sectional view of the reflective liquid crystal display device according to the first embodiment. In FIG. 8, the pixel TFT shown in FIG.
Although the single-gate type TFT shown in (a) is used, this is not an essential change.

In the reflection type liquid crystal display device shown in FIG. 8, a conductive filler 111 formed of a conductive organic resin is filled in a contact hole 83 opening between the reflection electrode 91 and the drain electrode 25. ing. Conductive filler 1
11 is preferably filled to the same height as the upper surface of the planarizing film 81.

The reflective electrode 91 and the drain electrode 25 are electrically connected by the conductive filler 111.

Referring to FIGS. 9 to 12, the method of manufacturing the reflection type liquid crystal display device shown in FIG.
The outline steps after forming are described. Note that the same steps as those described above can be used as the steps until the planarization film is formed.

As shown in FIG. 9, the contact holes 83
The conductive filler 11 is formed on the flattening film 81 having openings.
As 1, a material obtained by adding a material such as SnO to a conductive and transparent organic material is coated.

As shown in FIG.
3 is filled with a conductive filler 111. The flattening film 81 is covered with a conductive filler 111.

As shown in FIG. 11, an Al film for a reflective electrode is deposited. A pattern for a reflective electrode is formed by a normal pattern forming process.

As shown in FIG. 12, a reflective electrode 91 is formed by processing an Al film by dry etching using a chlorine-based gas and processing a conductive organic film by dry etching using a fluorine-based gas. .

In the reflection type liquid crystal display device shown in FIG.
The flatness of the reflective electrode is better than that of the device shown in FIG.

FIG. 13 is a sectional view of a reflection type liquid crystal display device A according to the second embodiment of the present invention. In the reflection type liquid crystal display device according to the present embodiment, a third interlayer insulating film 61c, a storage capacitor electrode 75, and a planarization film 81 are provided between the second common electrode 71 and the reflection electrode 91. . The storage capacitor electrode 75 is connected to the drain electrode 25 together with the reflection electrode 91 in the contact hole 83.

The third interlayer insulating film 61c only needs to ensure insulation between wiring layers, and is formed of, for example, a silicon nitride film having a thickness of 200 nm.

The storage capacitor electrode 75 is formed of an Al film. Ti may be used instead of Al.

In the reflection type liquid crystal display device according to the present embodiment, the storage capacitor for the pixel is composed of the second common electrode 71, the storage capacitor electrode 75, and the third interlayer insulating film sandwiched between the electrodes 71 and 75. It is formed from the film 61d. Since the function of ensuring the flatness of the reflective electrode 91 is exerted by the flattening film 81 in the upper layer, the thickness of the third interlayer insulating film 61d can be designed relatively freely. Therefore, the third interlayer insulating film 61d
It is also possible to obtain a large capacity by reducing the thickness of the substrate. In terms of obtaining a large capacity, silicon nitride is preferably used. A material having a higher dielectric constant, such as an oxide film of Ta, may be used.

Since the pixel TFT 11 and the signal line 3 are covered with the triple metal layer of the second common electrode 71, the storage capacitor electrode 75, and the reflection electrode 91, the function as an electric shield is the first. It is further improved as compared with the case of the reflective liquid crystal display device according to the embodiment, and the light-shielding property is also improved as a light-shielding film for shielding incident light from the second glass substrate side.

FIG. 14 shows a first modification of the reflection type liquid crystal display device according to the second embodiment.

A liquid crystal display device A according to the first modification example
Is different from the reflection type liquid crystal display device shown in FIG. 13 in that the second interlayer insulating film 61c is a resinous flattening film formed of polyimide.

In the reflection type liquid crystal display device A, the signal line 3
And first interlayer insulating film 61b by upper drain electrode 25
The upper unevenness can be flattened by the flattening film.
The flatness of the second common electrode 71 increases, and the second common electrode 7
The value of the storage capacitor formed by the first and third interlayer insulating films 61d and the storage capacitor electrode can be controlled more accurately.

FIG. 15 shows a second modification of the reflection type liquid crystal display device according to the second embodiment.

FIG. 15 is a drawing corresponding to FIG. 14 showing a first modification of the reflection type liquid crystal display device according to the second embodiment.

In the reflection type liquid crystal display device shown in FIG. 14, the storage capacitor electrode 75 is connected to the drain electrode 25 in a contact hole 83 opened between the reflection electrode 91 and the drain electrode 25. In addition, the inside of the contact hole 83 is filled with a conductive filler 111 formed of conductive polyimide (resin). The conductive filler 111 is preferably filled up to the same height as the upper surface of the planarizing film 81.

The reflective electrode 91 and the drain electrode 25 are electrically connected via the storage electrode 75 by the conductive filler 111.

Referring to FIGS. 16 to 19, the schematic steps of the method for manufacturing the reflection type liquid crystal display device shown in FIG. 15 will be described.

As shown in FIG. 16, by using the same steps as those described above, in the state where the flattening film is formed, the storage capacitor electrode 75 is connected to the contact hole 8
In 3, it is connected to the drain electrode 25.

A conductive and transparent organic material is coated as a conductive filler 111 on the flattening film 81 in which the contact hole 83 is opened.

As shown in FIG. 17, contact holes 8
3 is filled with a conductive filler 111. Flattening film 8
1 is covered with a conductive filler 111.

As shown in FIG. 18, an Al film for a reflective electrode is deposited. A pattern for a reflective electrode is formed by a normal pattern forming process.

As shown in FIG. 19, a reflective electrode 91 is formed by processing an Al film by dry etching using a chlorine-based gas and a conductive organic film by dry etching using a fluorine-based gas.

In the reflection type liquid crystal display device shown in FIG. 17, the flatness of the reflection electrode is improved as compared with the device shown in FIG.

FIG. 20 shows a reflective liquid crystal display device A according to the third embodiment of the present invention.

With the miniaturization of the reflection type liquid crystal display device, there is a need for a peripheral circuit integrated type liquid crystal display device in which a pixel portion for displaying an image and a peripheral circuit portion for controlling the pixel are integrally formed on the same substrate. Is growing more and more.

In a peripheral circuit integrated type liquid crystal display device using a polycrystalline silicon TFT, which is faster than an amorphous silicon TFT, as a semiconductor active element for a peripheral circuit, in order to solve the problem of TFT leakage current caused by light, etc. It is necessary to provide a light shielding film on the peripheral circuit.

At this time, if the common electrode provided on the counter substrate (second substrate) side and the light-shielding film to be formed on the peripheral circuit are separately formed, the process becomes complicated.

In addition, in the step of bonding the first substrate and the second substrate, accuracy of positioning is required.
If the margin for the bonding step is increased, it is difficult to increase the area of the pixel portion.

Conventionally, the planarizing material is provided on the pixel portion, and the planarizing material is not formed under the black matrix covering the peripheral circuit. Therefore, the parasitic capacitance between the peripheral circuit and the BM increases.

FIG. 20 shows a display section B for displaying an image and a peripheral circuit section C for controlling the display section B.

As shown in FIG. 20, the first glass substrate 2
A liquid crystal material E is filled between the third glass substrate 03 and the second glass substrate 207.

Note that, as the first glass substrate 203, an opaque substrate such as a Si substrate can be used instead of a transparent glass substrate.

On the second glass substrate 207, a first common electrode 205 which is normally fixed to the ground potential is formed.

On the display area B of the first glass substrate 203, pixel TFTs 228 are formed in an island shape.

A peripheral circuit C is formed on the first glass substrate 203 in the outer peripheral direction of the display section B. In the peripheral circuit C, polycrystalline silicon T is used as a semiconductor active element.
FT257 is formed.

On the first glass substrate 203 including the pixel TFT 228, a silicon oxide film 208 is formed. A polycrystalline silicon layer 209 is formed in an island shape on the silicon oxide film 208 to form a TFT channel layer. A gate oxide film 210 is formed on silicon oxide film 208 so as to cover polycrystalline silicon layer 209. Gate oxide film 2
A gate electrode G serving also as a scanning line is formed on 10.

Further, a first interlayer insulating film 215 is formed on gate oxide film 210 so as to cover gate electrode G. First interlayer insulating film 215, gate oxide film 210
Are formed through the contact holes 217, 217, 217,... Which reach the source and drain regions.

On the first interlayer insulating film 215, a source electrode S that is in contact with the source regions of the pixel TFT 228 and the peripheral circuit TFT 257 through the contact hole 217 is formed in common with the signal line 221, and the drain region has A drain electrode 223 is formed.

A first electrode 225 is formed on the outer peripheral portion of the peripheral circuit region on the first interlayer insulating film 215.

On the first interlayer insulating film 215, a flattening film 245 is formed.

The pixel TFT 228 of the flattening film 245
Above the upper drain electrode 223 and the first electrode 225, a second contact hole 255 is opened.

On the flattening film 245, the pixel TFT 22
The reflective electrode 251 is formed so as to cover the pixel 1 including the pixel 8. On the reflective electrode 251, an alignment film 258 is formed.

Peripheral circuit C including peripheral circuit TFT 257
A peripheral circuit light-shielding film 253 formed in the same step as the reflective electrode 251 is formed on the flattening film 245 thereon.

The drain electrode 223 and the reflection electrode 251 are electrically connected by a conductive filler 259 filled in the contact hole 255. First electrode 2
25 and the peripheral circuit light-shielding film 258 are electrically connected by a conductive filler 259 filled in the contact hole 255.

Connection terminal 287 of light shielding film 258 for peripheral circuit
The connection terminal 285 of the common electrode 205 formed on the second glass substrate 207 is electrically connected by a wiring 291.

In the reflection type liquid crystal display device according to the present embodiment, when forming the reflection electrode, the light shielding film for the peripheral circuit is formed in the same manner. The additional step for forming the light shielding film for the peripheral circuit is not required.

The light-shielding film for the peripheral circuit is the TFT 2 for the peripheral circuit.
The light irradiated to 57 is blocked. A leak current of a TFT caused by light is reduced, and a probability of malfunction of a peripheral circuit caused by light is reduced.

By connecting the peripheral circuit light-shielding film to the common electrode and setting it to the ground potential, no bias is applied to the liquid crystal material filled on the peripheral circuit. It is possible to prevent the liquid crystal material from deteriorating due to a DC bias (for example, a power supply voltage and a ground voltage) applied to the liquid crystal.

Even when a normally black liquid crystal is used, no bias is applied to the filled liquid crystal material, so that the periphery of the display section is always in a black display state.
There is no reflected light. Stray light from the periphery is reduced.

Since the peripheral circuit light-shielding film is the uppermost layer on the first glass substrate side, it can be directly used as a transfer electrode between the peripheral circuit light-shielding film and the second glass substrate. The degree of freedom regarding the structure of the transfer electrode and the position where the transfer electrode is provided is increased.

The present invention is particularly advantageous when used as a liquid crystal display device such as a reflection type projection panel which requires miniaturization.

FIG. 21 shows a first modification of the reflection type liquid crystal display device A according to the third embodiment of the present invention.

In the reflection type liquid crystal display device A shown in FIG.
A second interlayer insulating film 235 is formed between the first interlayer insulating film 215 and the planarizing film 245. A second common electrode 271 is formed on the second interlayer insulating film 235 so as to cover a region including the pixel TFT 228. The second common electrode 271 has an opening 273 formed on the upper drain electrode 223 of the pixel TFT 228.

Note that the second common electrode 271 may be formed so as to cover the entire surface of one pixel, or may be formed so as to cover a plurality of pixels or the entire display portion.

The second common electrode 271 is preferably connected to the first common electrode 295 to be at the ground potential.

In the liquid crystal display device of the present embodiment, the second common electrode 271, the planarizing insulating film 245, the reflective electrode 2
51 form a storage capacitor for the pixel.

Since the storage capacitor is formed on almost the entire surface of one pixel region including the pixel TFT 228, the pixel TFT and the storage capacitor can be efficiently arranged, so that the pixel can be miniaturized and the whole device can be downsized.

FIG. 22 shows a second modification of the reflection type liquid crystal display device A according to the third embodiment of the present invention.

In the reflection type liquid crystal display device A shown in FIG.
A second interlayer insulating film 235 is formed between the first interlayer insulating film 215 and the planarizing film 245. A second common electrode 271 is formed on the second interlayer insulating film 235 so as to cover a region including the pixel TFT 228. The second common electrode 271 has an opening 273 formed on the upper drain electrode 223 of the pixel TFT 228.

In the opening 273, the inside of the opening of the contact hole formed in the second interlayer insulating film 235 is filled with the filler 227. This filler 227 is
The second common electrode 271 can be formed in the same process.

Further, a filler 247 is filled in the contact holes formed in the flattening film 245.
Similarly, the first electrode 225 has the filler 227 and the filler 24.
7 is connected to the peripheral circuit light-shielding film 253.

The inside of the contact hole is filled with the filler 227 and the filler 247 in two stages. Filling in the contact hole becomes easy. The electrical connection between the upper drain electrode 223 and the reflective electrode 251 is further ensured.

FIG. 23 shows a third modification of the reflection type liquid crystal display device A according to the third embodiment of the present invention.

In the reflection type liquid crystal display device A shown in FIG.
A second interlayer insulating film 235 and a third interlayer insulating film 236 are formed between the first interlayer insulating film 215 and the planarizing film 245. On the second interlayer insulating film 235, a pixel TFT
228 so as to cover the region including 228
1 is formed. The second common electrode 271 has an opening 27 above the upper drain electrode 223 of the pixel TFT 228.
3 are formed.

A third interlayer insulating film 236 is formed to cover the second common electrode 271. Third interlayer insulating film 23
6. Drain electrode 22 penetrating through first interlayer insulating film 235
A contact hole exposing 3 is formed. A storage capacitor electrode 291 for forming a storage capacitor is formed on the third interlayer insulating film 236 so as to cover the contact hole and to face the second common electrode 271.

In the opening 273, the inside of the opening of the contact hole formed in the second interlayer insulating film 235 is removed.
The storage capacitor electrode 291 covers. The filler 261 fills the storage capacitor electrode 291 in the opening of the contact hole.

In the region including the first electrode 225,
A contact hole that exposes the first electrode is formed through the third interlayer insulating film 236 and the second interlayer insulating film 235, and a relay electrode 291a is formed thereon using the same material as the storage capacitor electrode 291. Have been.

An opening is also provided on the first electrode 225,
The storage capacitor electrode 291 is covered with the same material as the electrode. A planarizing film 245 is formed to cover the electrodes 291 and 291a, and a contact hole exposing the electrodes 291 and 291a is opened.

The storage capacitor electrodes 291 and 291a in the openings of the contact holes are filled with the filler 261. The reflective electrode 251 and the light-shielding electrode 253 are formed so as to cover the filler 261.

The first electrode 225 has the above structure,
It is connected to the light shielding film 253 for the peripheral circuit.

The storage capacitor is formed by the fixed potential electrode 271, the third interlayer insulating film 236, and the storage capacitor electrode 291, and has a higher storage capacitor value than a structure in which a capacitor is formed with a flattening film interposed. The degree of freedom of the design increases. It is also possible to make a large capacity, and it is possible to miniaturize pixels.

FIGS. 24 and 25 show a reflection type liquid crystal display device according to a fourth embodiment of the present invention.

FIG. 24 shows the entire liquid crystal display device A.

In this reflection type liquid crystal display device, a boundary area BA between the display section B and the peripheral circuit section C is formed.

FIG. 25 shows an area X including the upper left corner of the boundary area BA.

Pixel TFT provided in boundary area BA
A dummy reflective electrode 251a formed of the same metal layer as the reflective electrode 251 on the pixel 201 is provided thereon.

The dummy reflection electrode 251a is connected to the boundary area B
A, the dummy pixels 201a, 201a,
It is formed in common on 201a.

The dummy reflective electrode 251a is connected to a common electrode formed on the second glass substrate.

Since there is a metal film at the same potential as the common electrode near the periphery of the display section, the periphery is always "black display" in the normally black liquid crystal mode, and the influence of stray light can be reduced. it can.

The dummy reflective electrode 251a may be integrated with the peripheral circuit light-shielding film 253 to form a common electrode.

Although one dummy pixel 201a is provided vertically, horizontally, and one pixel, a plurality of dummy pixels may be provided.

Referring to FIG. 26, a description will be given of a reflective liquid crystal display device according to a fifth embodiment of the present invention.

In the reflection type liquid crystal display device, semiconductor active elements and signal lines can be arranged below the reflection electrode. Therefore, a high aperture ratio can be realized.

However, it is necessary to form a contact hole in the interlayer insulating film in order to conduct the terminal of the semiconductor active element and the pixel electrode.

In this case, the contact hole and its peripheral portion have poor flatness. The portion having poor flatness does not basically contribute to display.

In recent liquid crystal display devices, high integration (miniaturization) is progressing, and the problem of lack of flatness due to contact holes in this portion cannot be ignored.

In a recent reflection type liquid crystal display device, T
The unevenness on the first substrate side on which the active element such as FT is formed,
A technique of flattening by coating with a flattening film or the like is used.

By flattening the irregularities on the first substrate side, the influence of the electric field in the horizontal direction (the direction parallel to the substrate surface) and the influence of the steps due to bus lines such as signal lines are reduced, and the aperture ratio of the pixel is reduced. Is improved.

Generally, in a reflection type liquid crystal display device,
Since an active element and a bus line can be provided below the reflective electrode, a high aperture ratio can be realized. However, the reflection type liquid crystal display also has the following problems.

It is necessary to electrically connect a terminal of the active element (for example, a drain terminal of a TFT or the like) and a reflective electrode (display electrode) provided thereon via an interlayer insulating film. A contact hole is opened in the interlayer insulating film, and a reflective electrode (display electrode) is deposited along the concave shape in the contact hole opening to cover the inside of the opening.

The portion of the reflective electrode in which the contact hole is buried also has a concave upper surface. Then, the orientation of the liquid crystal molecules filled on the reflective electrode is disturbed due to the nearby concave shape. The portion where the orientation is disturbed does not contribute to the display of an image. In particular, with the miniaturization of the pixel, the influence of the disorder of the alignment in the contact hole cannot be ignored. Even when the reflective electrode is filled with a resin or the like and the concave portion is filled with the resin, there remains a problem that the electric field is biased.

In the reflection type liquid crystal display device shown in FIG. 26, a polycrystalline silicon TFT 317 including a source S, a gate G and a drain D is formed on a first glass substrate 303.

On the second glass substrate 307 opposed to the first glass substrate 303, a first common electrode 305 is formed. A liquid crystal material E is filled between the first glass substrate 303 and the second glass substrate 307.

On the polycrystalline silicon TFT 317, a planarizing insulating film 331 made of acrylic resin and having a thickness of 2 μm is formed.
Are formed. A 5 μm square contact hole 325 is formed in the planarization insulating film 331 on the drain electrode S.
Are formed. The contact hole is tapered, and the opening is 10 μm square. Along the concave shape in the opening of the contact hole 325, a first reflective electrode 347 made of Al covers the inside of the opening.

In the opening of the contact hole 325, the first reflection electrode 347 is filled with a contact hole filler 361 made of acrylic resin. The contact hole filling material 361 is coated with an acrylic resin by spin coating on the first glass substrate 303, and then subjected to an ashing process until the upper flat surface of the first reflective electrode 347 and the upper surface of the acrylic resin are flush. Is formed.

On the flat surface formed by the upper flat surface of the first reflective electrode 347 and the acrylic filler 361 filling the concave portion,
A second reflective electrode 351 formed of an Al layer is formed.

The first reflective electrode 347 is made of Ti or T in order to improve the adhesion to the drain electrode.
It may be formed of i / Al / Ti.

In the reflection type liquid crystal display device shown in FIG. 26, the second reflection electrode 3 functioning as an actual reflection electrode
51 has good flatness.

In the reflection type liquid crystal display device according to the present embodiment, the alignment of the liquid crystal does not disturb due to the contact hole for forming the connection between the reflection electrode and the drain electrode. Since the surface of the reflective electrode is flat, the bias of the electric field hardly occurs. In particular, a portion that does not contribute to the display of an image due to the influence of the disorder of the alignment in the contact hole portion, which becomes a problem when the pixel is miniaturized, is reduced.

Referring to FIG. 27, a description will be given of a reflective liquid crystal display device according to a sixth embodiment of the present invention.

In the reflection type liquid crystal display device shown in FIG. 27, a polycrystalline silicon TFT 317 including a source S, a gate G and a drain D is formed on a first glass substrate 303.

A first common electrode 305 is formed on a second glass substrate 307 facing the first glass substrate 303. A liquid crystal material E is filled between the first glass substrate 303 and the second glass substrate 307.

On the drain electrode D of the polycrystalline silicon TFT 317, a projecting drain electrode 326 made of Ti / Al / Ti and having a height of 1 μm is formed.

On the polycrystalline silicon TFT 317 on which the protruding drain electrode 326 is formed, a planarization insulating film 321 made of acrylic resin and having a thickness of 2 μm is formed. The protruding drain electrode 326 and the planarizing insulating film have substantially the same height.

[0211] In order to connect to the upper surface of the protruding drain electrode 326 exposed on the surface of the planarization insulating film 321,
A reflective electrode 351 made of Al is formed.

In the reflection type liquid crystal display device shown in FIG. 27, the flatness of the reflection electrode 351 is good. Electrical connection between the reflective electrode and the drain electrode can be easily formed.

[0213] In the reflection type liquid crystal display device according to the present embodiment, a protruding drain electrode is formed on the drain electrode in advance. There is no disturbance in the orientation of the liquid crystal that occurs when an electrical connection is formed between the reflective electrode and the drain electrode. Since the surface of the reflective electrode is flat, the bias of the electric field hardly occurs. In particular,
The portion which does not contribute to the display of an image due to the influence of the disorder of the alignment in the contact hole portion which becomes a problem when the pixel is miniaturized is reduced.

Referring to FIG. 28, a description will be given of a reflective liquid crystal display device according to a seventh embodiment of the present invention.

In the reflection type liquid crystal display device shown in FIG. 28, a polycrystalline silicon TFT is formed on a first glass substrate 303, and a signal line (bus) connected to a source electrode of the TFT via an interlayer insulating film. Lines 387 and 387 are formed.

On the second glass substrate 307 opposed to the first glass substrate 303, a first common electrode 305 is formed. A liquid crystal material E is filled between the first glass substrate 303 and the second glass substrate 307.

The pixel pitch is 30 μm, and the thickness (step) of the signal line 387 is 1 μm.

In FIG. 28, signal lines 387 and 387
, Extends in the same direction as the signal line 387,
A dummy signal line 391 that is not connected to the source electrode of the TFT is provided.

After the dummy signal lines 391 are formed, an acrylic resin is spin-coated to form a flat insulating film 3 having a thickness of 2 μm.
93 were formed.

Thereafter, as in the case of the reflection type liquid crystal display device according to the fourth embodiment, a contact hole is formed on the drain electrode S of the TFT. A first reflective electrode made of Al is formed along the concave shape in the opening of the contact hole so as to cover the inside of the opening. Next, a contact hole filler formed of an acrylic resin is filled in the opening of the contact hole and on the first reflective electrode. This contact hole filling material is formed by spin coating an acrylic resin on the first glass substrate 303.
After application on the upper surface, ashing is performed until the upper flat surface of the first reflective electrode and the upper surface of the acrylic resin are flush with each other.

A second reflective electrode made of Al is formed so as to match the upper flat surface of the first reflective electrode.

In the reflection type liquid crystal display device using the dummy signal lines shown in FIG. 28, the flatness of the second reflection electrode is smaller than that of the reflection type liquid crystal display device according to the fifth embodiment. Is further improved.

As described above, various reflective liquid crystal display devices have been described as embodiments, but it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

[0224]

By using the reflection type liquid crystal display device of the present invention, it is possible to achieve high integration and high performance of the reflection type liquid crystal display device.

[Brief description of the drawings]

FIG. 1 is a plan view of a reflective liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 3 is a plan view showing TFTs, signal lines, and scanning lines used in the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view of the reflective liquid crystal display device according to the first embodiment of the present invention, showing a cross section of a pixel portion.

FIG. 5 is a plan view of the reflective liquid crystal display device according to the first embodiment of the present invention, showing a reflective electrode, a TFT, a signal line, and a scanning line.

FIG. 6 is a plan view of the reflective liquid crystal display device according to the first embodiment of the present invention, showing fixed potential electrodes.

FIG. 7 shows an application example of the reflection type liquid crystal display device according to the first embodiment of the present invention. (A) shows an example applied to a direct-view liquid crystal panel. (B) shows an example applied to a projection type liquid crystal panel.

FIG. 8 is a modification example of the reflective liquid crystal display device according to the first embodiment of the present invention, and shows a cross section of a pixel portion.

FIG. 9 shows a manufacturing process of a modification of the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 10 shows a manufacturing process of a modified example of the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 11 shows a manufacturing process of a modified example of the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 12 shows a manufacturing process of a modification of the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 13 shows a cross section of a pixel portion of a reflection type liquid crystal display device according to a second embodiment of the present invention.

FIG. 14 is a modification of the reflection type liquid crystal display device according to the second embodiment of the present invention, and shows a cross section of a pixel portion.

FIG. 15 is a second modification of the reflection type liquid crystal display device according to the second embodiment of the present invention, and shows a cross section of a pixel portion.

FIG. 16 shows a manufacturing process of a second modification of the reflection type liquid crystal display device according to the second embodiment of the present invention.

FIG. 17 shows a manufacturing process of a second modification of the reflective liquid crystal display device according to the second embodiment of the present invention.

FIG. 18 shows a manufacturing process of a second modification of the reflective liquid crystal display device according to the second embodiment of the present invention.

FIG. 19 shows a manufacturing process of a second modification of the reflective liquid crystal display device according to the second embodiment of the present invention.

FIG. 20 illustrates a cross section of a pixel portion and a peripheral circuit portion, which is a reflection type liquid crystal display device according to a third embodiment of the present invention.

FIG. 21 is a first modification of the reflection type liquid crystal display device according to the third embodiment of the present invention, and shows a cross section of a pixel portion and a peripheral circuit portion.

FIG. 22 shows a second modification of the reflective liquid crystal display device according to the third embodiment of the present invention, and shows a cross section of a pixel portion and a peripheral circuit portion.

FIG. 23 is a third modification of the reflective liquid crystal display device according to the third embodiment of the present invention, and shows a cross section of a pixel portion and a peripheral circuit portion.

FIG. 24 is a plan view of a reflective liquid crystal display device according to a fourth embodiment of the present invention.

FIG. 25 is a plan view of a reflective liquid crystal display device according to a fourth embodiment of the present invention, showing an upper left corner of a boundary region.

FIG. 26 shows a cross section of a pixel portion of a reflective liquid crystal display device according to a fifth embodiment of the present invention.

FIG. 27 shows a cross section of a pixel portion of a reflective liquid crystal display device according to a sixth embodiment of the present invention.

FIG. 28 shows a cross section of a pixel portion of a reflective liquid crystal display device according to a seventh embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List A liquid crystal display device B display unit C peripheral circuit unit S source D drain G gate E liquid crystal material 1 pixel 3 signal line 5 scanning line 11 pixel TFT 15 liquid crystal cell 17 storage capacitor 21 peripheral circuit TFT 25 drain electrode 31 first glass Substrate 41 Sealing material 51 Second glass substrate 61 Interlayer insulating film 71 Second common electrode 73 Opening 75 Storage capacitor electrode 81 Flattening insulating film 91 Reflective electrode 111 Filler 131 First common electrode 251 Reflective electrode 253 Peripheral circuit Light-shielding film 271 Second common electrode 303 First glass substrate 307 Second glass substrate 317 Polycrystalline silicon TFT 325 Projecting drain electrode 331 Flattening insulating film 347 First reflecting electrode 361 Contact hole filling material 351 Second Reflecting electrode 371 Flattening insulating film 391 Dummy pattern 393 Flat Insulating insulation film 397 Bus line

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Gomune Mayama 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Tetsuya Kobayashi 4 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture 1-1, Fujitsu Limited (72) Inventor Kazutaka Hanaoka 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Limited (72) Inventor Kiyoji Tanuma, 4 Ueodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture 1-1-1 Fujitsu Limited (72) Inventor Yuichi Inoue 4-1-1 1-1 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture F-term within Fujitsu Limited 2H092 JA24 JB07 JB13 JB22 JB31 JB52 JB54 JB58 JB63 NA01 PA12

Claims (17)

[Claims] A first substrate including a display unit in which a plurality of pixels are arranged in a matrix; a second substrate disposed to face the first substrate and having a first common electrode formed thereon; A liquid crystal layer sandwiched between the first and second substrates, a plurality of semiconductors arranged in a matrix on the display portion of the first substrate, each having a source, a drain, and a gate. An active element; an interlayer insulating film deposited so as to cover the semiconductor active element; a plurality of scanning lines formed in the interlayer insulating film and connecting the gates of the semiconductor active elements arranged in a row direction; A plurality of signal lines that are formed in an insulating film and connect the sources of the semiconductor active elements arranged in the column direction; Formed and electrically connected to the first common electrode, A second common electrode having an opening above the drain of the conductor active element, formed on the interlayer insulating film, penetrating the interlayer insulating film at the opening, and connected to a drain of each semiconductor active element; A reflective liquid crystal display device comprising: a plurality of pixel electrodes separated for each pixel and opposed to the first common electrode via the liquid crystal layer. 2. The semiconductor device according to claim 1, further comprising a drain connected to each of the semiconductor active elements, arranged at a level between the pixel electrode and the second common electrode, and separated for each pixel.
2. The reflective liquid crystal display device according to claim 1, further comprising a storage capacitor electrode that forms a storage capacitor in opposition to the common electrode. 3. The reflective liquid crystal display device according to claim 1, wherein the second common electrode is formed of a light-shielding conductor. 4. The reflective liquid crystal device according to claim 1, wherein said pixel electrode includes a conductive filler for filling a contact hole formed in said interlayer insulating film. 5. A reflection type projection panel using the liquid crystal display device according to claim 1. 6. A reflective direct-view panel using the liquid crystal display device according to claim 1. 7. The first substrate has a peripheral portion disposed around a display portion and including a driving circuit for driving the display portion, and a source is provided on the peripheral portion of the first substrate. , A plurality of semiconductor active elements for a drive circuit having a drain and a gate, and covering the semiconductor active elements for a drive circuit and having substantially the same configuration as the interlayer insulating film, but excluding the second common electrode 2. A peripheral interlayer insulating film, and a peripheral light-shielding film formed on the peripheral interlayer insulating film and having substantially the same configuration as the pixel electrode.
5. The reflective liquid crystal display device according to any one of items 1 to 4. 8. The reflective liquid crystal display device according to claim 7, wherein said peripheral light-shielding film is electrically connected to said first common electrode. 9. A liquid crystal display device comprising: a display section in which a plurality of pixels are arranged in a matrix; and a peripheral circuit disposed around the display section and driving pixels of the display section. A first substrate defining a circuit, a second substrate disposed opposite to the first substrate and having a common electrode formed thereon, and a liquid crystal layer sandwiched between the first and second substrates; A plurality of semiconductor active elements for a pixel and a peripheral circuit having a source, a drain, and a gate, and formed on the first substrate so as to cover the plurality of semiconductor active elements, An interlayer insulating film including a planarizing film having a functionalization function; a contact hole that penetrates the interlayer insulating film and reaches a drain of a semiconductor active element in a display portion; Conductive connectors forming the same surface A reflective electrode formed on the interlayer insulating film and separated for each pixel and covering the semiconductor active element of the display unit; and a reflective electrode formed on the interlayer insulating film and covering the semiconductor active element for the peripheral circuit. A reflective liquid crystal display device including a peripheral circuit light-shielding film. 10. A storage capacitor electrode disposed below the uppermost layer having the planarizing function, having an opening including the contact hole, and forming a storage capacitor facing the reflective electrode of each pixel. The reflective liquid crystal display device according to claim 9, comprising: 11. The reflection type liquid crystal display device according to claim 10, wherein said peripheral circuit light shielding film and said storage capacitor electrode are joined to said common electrode. 12. A sealing material provided between the first substrate and the second substrate and sealing the liquid crystal layer is provided so as to cover at least a part of the peripheral circuit. 12. The reflective liquid crystal display device according to any one of 9 to 11. 13. The light-shielding film for a peripheral circuit portion is formed at a boundary between the display portion and the peripheral circuit and has substantially the same configuration as a pixel of the display portion. 13. The reflection type liquid crystal display device according to claim 9, further comprising a dummy pixel. 14. A first substrate, a plurality of pixels formed on the first substrate and arranged in a matrix, a plurality of scanning lines extending in a column direction, and a plurality of scanning lines extending in a row direction. A plurality of signal lines extending along the scan line, one of the pixels is connected to each intersection of the scanning line and the signal line, each pixel is a semiconductor active element, the drain electrode of the semiconductor active element A display unit including a pixel electrode connected thereto; and a peripheral unit disposed on an end in the row direction and the column direction of the first substrate, including a semiconductor active element for a peripheral circuit, and driving the scanning line and the signal line. A circuit, a second substrate disposed to face the first substrate, and a liquid crystal layer sandwiched between the first and second substrates, wherein the pixel is a semiconductor active device for the pixel. A planarizing insulating film covering the planarizing insulating film, and a drain of the semiconductor active element penetrating the planarizing insulating film. At least one contact hole reaching the contact electrode, a first electrode covering a region including the contact hole and leaving a recess on the upper surface, a contact hole filler filling the recess on the first electrode upper surface, A liquid crystal display device comprising: a first electrode; and a second electrode covering the contact hole filling material. 15. A first substrate, a plurality of pixels formed on the first substrate and arranged in a matrix, a plurality of scanning lines extending along a row direction, and a plurality of scanning lines extending in a column direction. A plurality of signal lines extending along the scan line, one of the pixels is connected to each intersection of the scanning line and the signal line, each pixel has a source, a drain, a semiconductor active element having a gate, A protruding drain electrode formed on the drain of the semiconductor active element, an insulating film that embeds the periphery of the protruding drain electrode to form a surface of substantially the same height, and that on the insulating film and the drain electrode A display unit including a pixel electrode to be formed, a peripheral circuit disposed on an end of the first substrate in a row direction and a column direction, including a semiconductor active element, and driving the scanning line and the signal line; A second substrate disposed opposite to the first substrate And a liquid crystal layer sandwiched between the first and second substrates. 16. A first substrate, a plurality of pixels formed on the first substrate and arranged in a matrix, a plurality of scanning lines extending along a row direction, and a plurality of pixels extending in a column direction. A plurality of signal lines extending along the scan line, one of the pixels is connected to each intersection of the scanning line and the signal line, each pixel is a semiconductor active element, the drain electrode of the semiconductor active element A display unit including a pixel electrode connected thereto, a peripheral circuit disposed on an end of the first substrate in a row direction and a column direction, including a semiconductor active element, and driving the scanning line and the signal line; A second substrate disposed to face the first substrate, a liquid crystal layer sandwiched between the first and second substrates, and a second substrate disposed in a peripheral circuit on the first substrate; At least one dummy convex portion provided in a wide space portion on one substrate; And a flattening film formed on the first substrate so as to cover the first portion. 17. A projection type liquid crystal projector using the liquid crystal display device according to claim 14.