JP2000248154A - Epoxy resin composition and semiconductor sealing device - Google Patents
Epoxy resin composition and semiconductor sealing deviceInfo
- Publication number
- JP2000248154A JP2000248154A JP11052122A JP5212299A JP2000248154A JP 2000248154 A JP2000248154 A JP 2000248154A JP 11052122 A JP11052122 A JP 11052122A JP 5212299 A JP5212299 A JP 5212299A JP 2000248154 A JP2000248154 A JP 2000248154A
- Authority
- JP
- Japan
- Prior art keywords
- represented
- epoxy resin
- resin
- general formula
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 25
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 25
- 239000000203 mixture Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000007789 sealing Methods 0.000 title claims description 14
- 239000005011 phenolic resin Substances 0.000 claims abstract description 32
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229920003986 novolac Polymers 0.000 claims abstract description 18
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011256 inorganic filler Substances 0.000 claims abstract description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 11
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 10
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 11
- 238000002156 mixing Methods 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 7
- 239000011347 resin Substances 0.000 abstract description 7
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 abstract 1
- 239000012778 molding material Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000001993 wax Substances 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 238000004898 kneading Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- DCTOHCCUXLBQMS-UHFFFAOYSA-N 1-undecene Chemical compound CCCCCCCCCC=C DCTOHCCUXLBQMS-UHFFFAOYSA-N 0.000 description 2
- -1 Bengala Substances 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
ãïŒïŒïŒïŒã[0001]
ãçºæã®å±ããæè¡åéãæ¬çºæã¯ãåå°äœããã±ãŒãž
ã«ãããŠãæåœ¢æ§ãèãªãããŒã¯ã©ãã¯æ§çã®ä¿¡é Œæ§ã«
åªããããšããã·æš¹èçµæç©ããã³åå°äœå°æ¢è£
眮ã«é¢
ãããBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition and a semiconductor encapsulation device having excellent reliability such as moldability and reflow crack resistance in a semiconductor package.
ãïŒïŒïŒïŒã[0002]
ãåŸæ¥ã®æè¡ãåŸæ¥ãåå°äœå°æ¢ææã§ã¯ãïœâã¯ã¬ãŸ
ãŒã«ããã©ãã¯åãšããã·æš¹èãããã©ãã¯åãã§ããŒ
ã«æš¹èã§ç¡¬åãããæ¹æ³ãå€ãçšããããŠããããã
ããè¿å¹Žãåå°äœéç©åè·¯ã®åéã«ãããŠãé«éç©åã«
䌎ããããã®å€§ååãé²ãäžæ¹ãããã±ãŒãžã¯èååã
é²ã¿ãããé«ãèãªãããŒã¯ã©ãã¯æ§ãèŠæ±ãããŠã
ãã2. Description of the Related Art Conventionally, as a semiconductor encapsulating material, a method of curing an o-cresol novolak type epoxy resin with a novolak type phenol resin is often used. However, in recent years, in the field of semiconductor integrated circuits, while the size of chips has been increased due to higher integration, packages have become thinner, and higher reflow crack resistance has been required.
ãïŒïŒïŒïŒãäžæ¹ã硬åä¿é²å€ãšããŠã¯ãããªãã§ãã«
ãã¹ãã£ã³ïŒïŒŽïŒ°ïŒ°ïŒãïŒïŒïŒâãžã¢ã¶ãã·ã¯ãïŒïŒ
ïŒïŒïŒïŒœãŠã³ãã»ã³âïŒïŒïŒ€ïŒ¢ïŒµïŒãã€ãããŸãŒã«é¡ãª
ã©ãå©çšãããŠãããããããã¯ããããåºæã®ç¡¬åæ§
ã瀺ããããå°æ¢æš¹èã«èŠæ±ãããè«žç¹æ§ããã¹ãŠæºã
ãããšã¯ã§ããªãã£ãããªãã§ããã€ãããŸãŒã«é¡ã¯æ¯
èŒçäœæž©æ¡ä»¶ã§åå¿ãä¿é²ããèç±æ§ã«åªããç¡¬åæ§ã
äžãããããæåœ¢æ§ãèãªãããŒã¯ã©ãã¯æ§ã®é¢ã§ã¯ã
ä»ã®ç¡¬åä¿é²å€ãšæ¯èŒããŠåªäœã«ãã£ãŠããããããã
äžçŽç©ç¹æ§ãèæ¹¿ä¿¡é Œæ§ã«ãããŠã¯ãä»ã®ç¡¬åä¿é²å€ã«
æ¯ã¹ãŠå€§ããèŠå£ãããŠãããOn the other hand, triphenylphosphine (TPP), 1,8-diazabicyclo [5,
[4,0] undecene-1 (DBU), imidazoles, and the like have been used, but since they each exhibit unique curability, they could not satisfy all the properties required for the sealing resin. Above all, imidazoles promote the reaction under relatively low temperature conditions and provide excellent heat resistance and curability, so in terms of moldability and reflow crack resistance,
It is superior to other curing accelerators. But,
Impurity characteristics and moisture resistance reliability were significantly inferior to other curing accelerators.
ãïŒïŒïŒïŒã[0004]
ãçºæã解決ããããšãã課é¡ãæ¬çºæã¯ãäžèšã®æ¬ ç¹
ãè§£æ¶ããããã«ãªããããã®ã§ãäžçŽç©ç¹æ§ãèæ¹¿æ§
ãåäžãããæåœ¢æ§ãèãªãããŒã¯ã©ãã¯æ§ã«åªããå°
æ¢æš¹èãšåå°äœãããããããã¯å°æ¢æš¹èãšãªãŒããã¬
ãŒã ã®éã®å¥ããããå
éšæš¹èã¯ã©ãã¯ã®çºçããªãã
é·æä¿¡é Œæ§ãä¿èšŒã§ãããšããã·æš¹èçµæç©ããã³åå°
äœå°æ¢è£
眮ãæäŸããããšãããã®ã§ãããSUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks, and has improved impurity characteristics and moisture resistance, excellent moldability and reflow crack resistance, and has a sealing resin and a semiconductor. There is no peeling between the chip or the sealing resin and the lead frame, and no occurrence of internal resin cracks.
An object of the present invention is to provide an epoxy resin composition and a semiconductor encapsulation device that can guarantee long-term reliability.
ãïŒïŒïŒïŒã[0005]
ã課é¡ã解決ããããã®ææ®µãæ¬çºæè
ã¯ãäžèšã®ç®ç
ãéæããããšéæç ç©¶ãéããçµæããã§ããŒã«æš¹è
硬åå€ãšããŠããžã·ã¯ããã³ã¿ãžãšã³åãã§ããŒã«æš¹è
ãšããã©ãã¯åãã§ããŒã«æš¹èã䜵çšãããã€ã硬åä¿
é²å€ãšããŠãïŒïŒïŒâããªã¡ãã¬ã³ãã³ãºã€ãããŸãŒã«
ãšããªãã§ãã«ãã¹ãã£ã³ã䜵çšããããšã«ãããäžèš
ã®ç®çãéæã§ããããšãèŠãã ããæ¬çºæã宿ãã
ãã®ã§ãããMeans for Solving the Problems As a result of diligent studies to achieve the above object, the present inventor has used dicyclopentadiene type phenol resin and novolak type phenol resin in combination as phenol resin curing agents, and The inventors have found that the above objects can be achieved by using 1,2-trimethylenebenzimidazole and triphenylphosphine in combination as curing accelerators, and have completed the present invention.
ãïŒïŒïŒïŒãå³ã¡ãæ¬çºæã¯ã ïŒïŒ¡ïŒæ¬¡ã®äžè¬åŒã§ç€ºãããïœâã¯ã¬ãŸãŒã«ããã©ãã¯
åãšããã·æš¹èãThat is, the present invention provides (A) an o-cresol novolak type epoxy resin represented by the following general formula:
ãåïŒã ïŒäœããåŒäžïœã¯ïŒåã¯ïŒä»¥äžã®æŽæ°ã衚ãïŒ ïŒïŒ¢ïŒïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºããããžã·ã¯ããã³ã¿ãžãš
ã³åãã§ããŒã«æš¹èãšEmbedded image (Where n represents an integer of 0 or 1 or more). (B) (a) a dicyclopentadiene-type phenol resin represented by the following general formula:
ãåïŒã ïŒäœããåŒäžïœã¯ïŒåã¯ïŒä»¥äžã®æŽæ°ã衚ãïŒ ïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºãããããã©ãã¯åãã§ããŒã«æš¹
èEmbedded image (Where n represents 0 or an integer of 1 or more) (b) Novolak-type phenol resin represented by the following general formula
ãåïŒã ïŒäœããåŒäžïœã¯ïŒåã¯ïŒä»¥äžã®æŽæ°ã衚ãïŒãšãéé
æ¯ã§ïŒïœïŒæåïŒïŒïœïŒæåãïŒïŒïŒãïŒïŒã®å²åã§å«
æãããã§ããŒã«æš¹è硬åå€ã ïŒïŒ£ïŒïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºãããïŒïŒïŒâããªã¡ãã¬
ã³ãã³ãºã€ãããŸãŒã«ãšEmbedded image (Where n represents an integer of 0 or 1 or more) and a phenolic resin curing agent containing (a) component / (b) component in a weight ratio of 0.2 to 10; c) 1,2-trimethylenebenzimidazole represented by the following general formula:
ãåïŒã ïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºãããããªãã§ãã«ãã¹ãã£ã³Embedded image (D) triphenylphosphine represented by the following general formula
ãåïŒïŒã ãšãé鿝ã§ïŒïœïŒæåïŒïŒïœïŒæåãïŒïŒïŒãïŒïŒã®
å²åã§å«æãã硬åä¿é²å€ããã³ ïŒïŒ€ïŒç¡æ©è³ªå
å¡«å€ãå¿
é æåãšããå
šäœã®æš¹èçµæç©
ã«å¯ŸããŠåèšããïŒïŒ€ïŒç¡æ©è³ªå
å¡«å€ãïŒïŒãïŒïŒéé
ïŒ
ã®å²åã§å«æããŠãªãããšãç¹åŸŽãšãããšããã·æš¹è
çµæç©ã§ããããŸãããã®ãšããã·æš¹èçµæç©ã®ç¡¬åç©
ã«ãã£ãŠãåå°äœããããå°æ¢ãããŠãªãããšãç¹åŸŽãš
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眮ã§ãããEmbedded image And a curing accelerator containing (c) component / (d) component in a ratio of 0.2 to 10 in weight ratio and (D) an inorganic filler as essential components. (D) An epoxy resin composition comprising an inorganic filler in a proportion of 25 to 95% by weight. A semiconductor sealing device is characterized in that a semiconductor chip is sealed with a cured product of the epoxy resin composition.
ãïŒïŒïŒïŒã以äžãæ¬çºæã詳现ã«èª¬æãããHereinafter, the present invention will be described in detail.
ãïŒïŒïŒïŒãæ¬çºæã«çšããïŒïŒ¡ïŒïœâã¯ã¬ãŸãŒã«ãã
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ã·æš¹èã䜿çšããããAs the (A) o-cresol novolak type epoxy resin used in the present invention, an epoxy resin represented by the general formula 6 is used.
ãïŒïŒïŒïŒãæ¬çºæã«çšããïŒïŒ¢ïŒãã§ããŒã«æš¹è硬å
å€ãšããŠã¯ãïŒïœïŒäžè¬åŒåïŒã§ç€ºããããžã·ã¯ããã³
ã¿ãžãšã³åãã§ããŒã«æš¹èãšïŒïœïŒäžè¬åŒåïŒã§ç€ºãã
ãããã©ãã¯åãã§ããŒã«æš¹èã䜵çšãããã®ã§ããã
ïŒïœïŒã®ãžã·ã¯ããã³ã¿ãžãšã³åãã§ããŒã«æš¹èãš
ïŒïœïŒã®ããã©ãã¯åãã§ããŒã«æš¹èãšã¯ãé鿝ã§
ïŒïœïŒæåïŒïŒïœïŒæåãïŒïŒïŒãïŒïŒã奜ãŸãã
ã¯ïŒïŒïŒãïŒã®å²åã§äœ¿çšãããé鿝ãïŒïŒïŒæªæºã§
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äœäžããããããåŸã£ãŠäžèšã®ç¯å²å
ã«éå®ããã®ãã
ããAs the phenol resin curing agent (B) used in the present invention, (a) a dicyclopentadiene type phenol resin represented by the general formula (7) and (b) a novolak type phenol resin represented by the general formula (8) are used in combination. Is what you do.
The dicyclopentadiene-type phenol resin (a) and the novolak-type phenol resin (b) have a weight ratio of the component (a) / component (b) of 0.2 to 10, preferably 0.5 to 5. Use in proportions. If the weight ratio is less than 0.2, the moisture absorption resistance is reduced, and if it exceeds 10, the molding workability is reduced. Therefore, it is better to limit to the above range.
ãïŒïŒïŒïŒãæ¬çºæã«ãããäžèšïŒïŒ¢ïŒãã§ããŒã«æš¹è
硬åå€ã®é
åå²åã¯ãïŒïŒ¡ïŒãšããã·æš¹èã®ãšããã·
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åºïŒœãåœéæ¯ã§ïŒïŒïŒãïŒïŒã奜ãŸããã¯ïŒïŒïŒãïŒïŒ
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ãããšãç¡¬åæ§ãèç±æ§ãèæ¹¿æ§ãæåœ¢äœæ¥æ§ãã
ã³ç¡¬åç©ã®é»æ°ç¹æ§ãæªããªãããããã®å Žåã奜ãŸã
ããªããåŸã£ãŠäžèšã®ç¯å²å
ã«éå®ããã®ããããIn the present invention, the mixing ratio of (B) the phenolic resin curing agent is such that [(A) the epoxy group of the epoxy resin / (B) the phenolic hydroxyl group of the phenolic resin] has an equivalent ratio of 0.1 to 10; , Preferably 0.5 to 2.
Use in the range of 0. Equivalent ratio is less than 0.1 or 10
If it exceeds 300, the curability, heat resistance, moisture resistance, molding workability, and electrical properties of the cured product will be poor, and any case is not preferable. Therefore, it is better to limit to the above range.
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ã«éå®ããã®ããããThe (C) curing accelerator used in the present invention comprises (c) 1,2-trimethylenebenzimidazole represented by the above general formula (9) and (d) triphenyl represented by the above general formula (10). It is a combination of phosphine.
(C) 1,2-trimethylenebenzimidazole and (d) triphenylphosphine are in a weight ratio of [(c)
Component / (d) component] is 0.1 to 10, preferably 0.5.
Use at a rate of ~ 5. If the weight ratio is less than 0.1,
(C) The effect of 1,2-trimethylenebenzimidazole is not exhibited, and if it exceeds 10, the workability of molding decreases. Therefore, it is better to limit to the above range.
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ã«é©ãã奜ãŸãããªããThe mixing ratio of the curing accelerator (C) in the present invention is 0.01 to 5.0 based on the whole resin composition.
It is desirable to contain it in the range of weight%. If this ratio is less than 0.01, it will not function as a curing agent and will not function as a curing agent.
If the content is more than 10% by weight, the curing of the sealing resin is too fast, which is not suitable for practical use and is not preferred.
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çšã«é©ããªããThe inorganic filler (D) used in the present invention has a low impurity concentration, a maximum particle size of 100 ÎŒm or less,
An inorganic filler having an average particle size of 30 ÎŒm or less is preferably used. If the average particle size exceeds 30 ÎŒm, the moisture resistance and the moldability are poor, which is not preferable. Specific examples of the inorganic filler include, for example, silica powder, silicon nitride powder, alumina powder, aluminum nitride, antimony trioxide, antimony pentoxide, antimony pentoxide, talc, calcium carbonate, titanium white, clay, mica, Bengala, glass fiber and the like can be mentioned, and these can be used alone or in combination of two or more. Among these, silica powder and alumina powder are particularly preferable and are often used. The mixing ratio of the inorganic filler is 2 to the entire resin composition.
Desirably, the content is 5 to 95% by weight. If the proportion is less than 25% by weight, heat resistance, moisture resistance, solder heat resistance, mechanical properties and moldability deteriorate, and if it exceeds 95% by weight, burrs become large and the moldability is poor and not suitable for practical use.
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åããããšãã§ãããThe epoxy resin composition of the present invention comprises the aforementioned o-cresol novolak type epoxy resin, dicyclopentadiene type phenol resin, novolak type phenol resin, 1,2-trimethylenebenzimidazole, triphenylphosphine and an inorganic filler. Is an essential component, but as far as it does not violate the purpose of the present invention, and if necessary, for example, natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, paraffins, etc. Release agents, flame retardants such as chlorinated paraffin, brominated toluene, and hexabromobenzene, low-stress components such as elastomers, coloring agents such as carbon black and red iron, coupling agents such as silane, and silicone oil It can be added and blended.
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ãä»äžãããããšãã§ãããThe general method for preparing the epoxy resin composition of the present invention as a molding material is as follows: o-cresol novolak type epoxy resin, dicyclopentadiene type phenol resin, novolak type phenol resin,
Blending 2-trimethylenebenzimidazole, triphenylphosphine, inorganic filler and other ingredients,
After sufficiently mixing by a mixer or the like, a melt-mixing process using a hot roll or a mixing process using a kneader or the like is performed, and then the mixture is solidified by cooling and pulverized to an appropriate size to obtain a molding material. If the molding material thus obtained is applied to sealing, coating, insulating, etc. of electronic parts or electric parts such as semiconductor devices, excellent properties and reliability can be imparted.
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ïŒïŒâ以äžã«å ç±ããŠç¡¬åãããããšãæãŸãããFurther, the semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor chip using the molding material described above. The semiconductor chip to be sealed is not particularly limited to, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. The most common sealing method is a low pressure transfer molding method, but sealing by injection molding, compression molding, casting, or the like is also possible. After sealing with a molding material, it is heated and cured, and finally a semiconductor sealing device sealed with a cured product of this composition is obtained. Curing by heating is 1
It is desirable to cure by heating to 50 ° C. or higher.
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湿æ§ã®ä¿¡é Œæ§ãåäžãããããšãã§ãããThe epoxy resin composition and the semiconductor encapsulation device of the present invention use a specific combination of a phenolic resin curing agent and a specific combination of a curing accelerator to reduce impurities in the resin composition and reduce the amount of impurities in the semiconductor package. In the above, the reliability of the moisture resistance was able to be improved.
ãïŒïŒïŒïŒã[0018]
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ããæå³ãããDESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described specifically with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, â%â means â% by weightâ.
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ïŒã«ç€ºãããæ¬çºæã®é¡èãªå¹æã確èªããããExample 1 16% of an o-cresol novolak type epoxy resin represented by the above formula 6, and a phenol resin 4.5 represented by the above formula 7
%, Phenol resin 4.5% shown in Chemical formula 8, 0.15% curing accelerator shown in Chemical formula 9, 0.15% curing accelerator shown in Chemical formula 10, 74% fused silica powder, silane 0.4% of a coupling agent and 0.3% of an ester wax are blended and mixed at room temperature, and further mixed at 90 to 95 ° C.
After kneading and cooling, the mixture was pulverized to produce a molding material. This molding material was transfer-injected into a mold heated to 175 ° C. and cured to form a molded product. The molded article was tested for impurity concentration and moisture resistance, and the results are shown in Table 1. The remarkable effect of the present invention was confirmed.
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ïŒã«ç€ºãããComparative Example 1 16% of o-cresol novolak epoxy resin shown in Chemical formula 6, 9% of phenol resin shown in Chemical formula 8, 0.15% of curing accelerator shown in Chemical formula 9, and 0.15% of the indicated hardening accelerator, 74% of fused silica powder, 0.4% of silane coupling agent and 0.3% of ester waxes were blended, mixed at room temperature, and further 90-95 ° C.
After kneading and cooling, the mixture was pulverized to produce a molding material. This molding material was transfer-injected into a mold heated to 175 ° C. and cured to form a molded product. The molded article was tested for impurity concentration and moisture resistance, and the results are shown in Table 1.
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çµæã衚ïŒã«ç€ºãããComparative Example 2 16% of an o-cresol novolak type epoxy resin represented by the above formula 6, and a phenol resin 4.5 represented by the above formula 7
%, 4.5% of the phenolic resin shown in Chemical formula 8, 0.3% of the curing accelerator shown in Chemical formula 10, and fused silica powder 74
%, A silane coupling agent 0.4% and an ester wax 0.3%, and mixed at room temperature.
After kneading and cooling at ~ 95 ° C, the mixture was pulverized to produce a molding material. This molding material was transfer-injected into a mold heated to 175 ° C. and cured to form a molded product. The molded article was tested for impurity concentration and moisture resistance, and the results are shown in Table 1.
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ãã®çµæã衚ïŒã«ç€ºãããComparative Example 3 16% of the o-cresol novolak type epoxy resin shown in the above formula 6, 9% of the phenol resin shown in the above formula 8, 0.3% of a curing accelerator shown in the above formula 10, and fused silica powder 74%, 0.4% of a silane coupling agent and 0.3% of an ester wax were blended, mixed at room temperature, kneaded and cooled at 90 to 95 ° C, and then pulverized to produce a molding material. This molding material was transfer-injected into a mold heated to 175 ° C. and cured to form a molded product. Since this molded article was tested for impurity concentration and moisture resistance,
The results are shown in Table 1.
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ã«ããæž¬å®ãè¡ã£ãã[Table 1] * 1: A molded product was prepared by transfer molding, and after post-curing at 175 ° C. for 8 hours,
Extraction with hot water was performed at 80 ° C. for 2 hours, and measurement was performed by ion chromatography.
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眮ã«ãã£ãŠæž¬å®ããã* 2: A molded article was prepared by transfer molding, post-cured at 175 ° C. for 8 hours, and measured by a thermomechanical analyzer.
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æéã®åžæ¹¿åŠçããåŸãïŒïœïœïŒïŒïŒâã®ïŒ©ïŒ²ãªãããŒ
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æç·ïŒäžè¯çºçïŒã®èµ·ããæéãè©äŸ¡ããã* 3: Using a molding material, a silicon chip (test element) having two or more aluminum wirings was bonded to a frame, transfer molded at 175 ° C. for 2 minutes, and QFP-208P, 2.8 mmt And a post-curing was carried out at 175 ° C. for 8 hours. The molded article thus obtained was previously subjected to 85 ° C., 40% RH, 168
After the moisture absorption treatment for a time, the mixture was passed through an IR reflow furnace at Max 240 ° C. four times. Thereafter, PCT is performed in saturated steam at 127 ° C. and 2.5 atm.
The time at which 0% disconnection (occurrence of a defect) occurred was evaluated.
ãïŒïŒïŒïŒã[0026]
ãçºæã®å¹æã以äžã®èª¬æããã³è¡šïŒããæãããªãã
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ããããšãã§ãããAs is clear from the above description and Table 1, the epoxy resin composition and the semiconductor encapsulation device of the present invention have excellent impurity characteristics, do not peel off even after IR reflow, and have excellent moisture resistance. As a result, disconnection due to electrode corrosion and occurrence of leak current due to moisture can be significantly reduced, and reliability can be guaranteed for a long period of time.
âââââââââââââââââââââââââââââââââââââââââââââââââââââ ããã³ãããŒãžã®ç¶ã (51)Int.Cl.7 èå¥èšå·  ããŒãã³ãŒãã(åèïŒ ïŒšïŒïŒïŒ¬ 23/29 ïŒïŒïŒ¬ 23/30  23/31 ã¿ãŒã (åèïŒ 4J002 CD042 CD061 CD072 DE117 DE127 DE137 DE147 DE237 DF017 DJ007 DJ017 DJ037 DJ047 DJ057 DL007 EU116 EW146 FA047 FD017 FD142 FD156 GQ05 4J036 AF08 DC41 DD07 FA01 FB08 JA07 4M109 AA01 BA01 CA21 EA03 EB03 EB04 EB12 EC01 EC03 EC20ââââââââââââââââââââââââââââââââââââââââââââââââââã® Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ã (Reference) H01L 23/29 H01L 23/30 R 23/31 F term (Reference) 4J002 CD042 CD061 CD072 DE117 DE127 DE137 DE147 DE237 DF017 DJ007 DJ017 DJ037 DJ047 DJ057 DL007 EU116 EW146 FA047 FD017 FD142 FD156 GQ05 4J036 AF08 DC41 DD07 FA01 FB08 JA07 4M109 AA01 BA01 CA21 EA03 EB03 EB04 EB12 EC01 EC03 EC20
Claims (2)
ãŒã«ããã©ãã¯åãšããã·æš¹èã ãåïŒã ïŒäœããåŒäžïœã¯ïŒåã¯ïŒä»¥äžã®æŽæ°ã衚ãïŒ ïŒïŒ¢ïŒïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºããããžã·ã¯ããã³ã¿ãžãš
ã³åãã§ããŒã«æš¹èãš ãåïŒã ïŒäœããåŒäžïœã¯ïŒåã¯ïŒä»¥äžã®æŽæ°ã衚ãïŒ ïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºãããããã©ãã¯åãã§ããŒã«æš¹
è ãåïŒã ïŒäœããåŒäžïœã¯ïŒåã¯ïŒä»¥äžã®æŽæ°ã衚ãïŒãšãéé
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æãããã§ããŒã«æš¹è硬åå€ã ïŒïŒ£ïŒïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºãããïŒïŒïŒâããªã¡ãã¬
ã³ãã³ãºã€ãããŸãŒã«ãš ãåïŒã ïŒïœïŒæ¬¡ã®äžè¬åŒã§ç€ºãããããªãã§ãã«ãã¹ãã£ã³ ãåïŒã ãšãé鿝ã§ïŒïœïŒæåïŒïŒïœïŒæåãïŒïŒïŒãïŒïŒã®
å²åã§å«æãã硬åä¿é²å€ããã³ ïŒïŒ€ïŒç¡æ©è³ªå å¡«å€ãå¿ é æåãšããå šäœã®æš¹èçµæç©
ã«å¯ŸããŠåèšããïŒïŒ€ïŒç¡æ©è³ªå å¡«å€ãïŒïŒãïŒïŒéé
ïŒ ã®å²åã§å«æããŠãªãããšãç¹åŸŽãšãããšããã·æš¹è
çµæç©ã(A) an o-cresol novolak type epoxy resin represented by the following general formula: (Where n represents 0 or an integer of 1 or more) (B) (a) a dicyclopentadiene-type phenol resin represented by the following general formula: (Where n represents 0 or an integer of 1 or more) (b) Novolak-type phenol resin represented by the following general formula: (Where n represents an integer of 0 or 1 or more) and a phenolic resin curing agent containing (a) component / (b) component in a weight ratio of 0.2 to 10; c) 1,2-trimethylenebenzimidazole represented by the following general formula: (D) triphenylphosphine represented by the following general formula: And a curing accelerator containing (c) component / (d) component in a ratio of 0.2 to 10 in weight ratio and (D) an inorganic filler as essential components. (D) An epoxy resin composition comprising an inorganic filler in a proportion of 25 to 95% by weight.
åç©ã«ãã£ãŠãåå°äœããããå°æ¢ãããŠãªãããšãç¹
城ãšããåå°äœå°æ¢è£ 眮ã2. A semiconductor sealing device, wherein a semiconductor chip is sealed with a cured product of the epoxy resin composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11052122A JP2000248154A (en) | 1999-03-01 | 1999-03-01 | Epoxy resin composition and semiconductor sealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11052122A JP2000248154A (en) | 1999-03-01 | 1999-03-01 | Epoxy resin composition and semiconductor sealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000248154A true JP2000248154A (en) | 2000-09-12 |
Family
ID=12906083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11052122A Pending JP2000248154A (en) | 1999-03-01 | 1999-03-01 | Epoxy resin composition and semiconductor sealing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000248154A (en) |
-
1999
- 1999-03-01 JP JP11052122A patent/JP2000248154A/en active Pending
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