JP2000114041A - Thin-film laminated body manufacture thereof and thin- film transformer using the same, thin-film inductor, and thin-film magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin-film laminated body capable of preventing the deterioration of magnetic property, a method for manufacturing the thin-film laminated body, and a thin-film transformer formed by using the thin-film laminated body, a thin-film inductor, and a thinfilm magnetic element. SOLUTION: A laminated body in which an insulation layer 22 is formed on a substrate is subjected to dehydro-baking and sputter-etching, and then a first magnetic layer 24 is laminated thereon with a barrier layer 23 interposed so as to form a thin-film laminated body. In the thin-film laminated body, the permeability of the magnetic layer can be prevented from reduction. Further, a thin-film transformer which is formed by using the thin-film laminated body indicates the reduction of transforming efficiency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, a thin film laminate in which a magnetic layer is formed on an insulating layer constituting a thin film transformer. The present invention relates to a thin film laminate, a method for manufacturing the thin film laminate, and a thin film transformer, a thin film inductor, and a thin film magnetic head formed using the thin film laminate.

[0002]

2. Description of the Related Art FIG. 14 is a sectional view showing a thin film transformer formed by using a conventional thin film laminate. In this thin film transformer, an extraction electrode 8 is formed on the substrate 1. The extraction electrode 8 also serves as a substrate wiring. An insulating layer 2 made of a polyimide resin, a first magnetic layer 3, and an insulating layer 4 made of a polyimide resin are sequentially laminated, and a spiral-shaped primary coil 5 and a secondary coil 6 are embedded in the insulating layer 4. I have. The center of the primary coil 5 is
The through holes formed in the insulating layer 2, the first magnetic layer 3 and the insulating layer 4 are connected to the extraction electrode 8. Similarly, the central portion of the secondary coil 6 is also provided with the insulating layer 2 and the first magnetic layer 3.
And another through electrode (not shown) through a through hole formed in the insulating layer 4. Further, a second magnetic layer 7 is formed on the insulating layer 4. In this thin-film transformer, the first magnetic layer 3 is directly laminated on the insulating layer 2, and the second magnetic layer 7 is directly laminated on the insulating layer 4.

[0003] The insulating layers 2 and 4 are made of a polyimide resin or a novolak resin by paste printing or spin coating, followed by baking, hot dipping, thermal spraying, or the like.
It is formed using a method such as vapor phase plating, vacuum deposition, sputtering, or ion plating.

The first magnetic layer 3 and the second magnetic layer 7 are made of Ni
Fe-based alloys or Co-Fe-MO applied by the present applicant in Japanese Patent Application No. 9-293645 (where M is Hf, T
i, Zr, or at least one of the rare earth elements) alloy film, and an Fe-MO alloy film filed by the present applicant in Japanese Patent Application No. 5-338333. The first magnetic layer 3 and the second magnetic layer 7 are formed by a sputtering method,
It is formed using an evaporation method or the like. As the sputtering device, an existing sputtering device such as RF bipolar sputtering, DC sputtering, magnetron sputtering, tripolar sputtering, ion beam sputtering, and facing target sputtering is used.

[0005]

However, a thin film laminate in which a magnetic layer is directly laminated on an insulating layer formed of a polyimide or novolak resin is an insulating layer formed of an inorganic material such as glass. Above, there is a drawback that magnetic properties are deteriorated as compared with a thin film laminate formed by laminating magnetic layers.

It is presumed that this is due to the fact that a gas such as water vapor is generated from the polyimide resin during the lamination of the magnetic layer and mixed into the magnetic layer. Since an oxide is used for the magnetic layer, if water vapor or the like is mixed during lamination of the magnetic layer, the original composition of the magnetic layer deviates. Also, the microstructure of the magnetic layer becomes non-uniform. Therefore, it is considered that the effective magnetic permeability μ ′ is reduced.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and a thin film laminate capable of preventing deterioration of magnetic characteristics, a method for manufacturing the thin film laminate, and a method using the thin film laminate. It is an object of the present invention to provide a formed thin film transformer, a thin film inductor, and a thin film magnetic element.

[0008]

Means for Solving the Problems The thin film laminate of the present invention comprises:
In a thin-film laminate having an insulating layer and a magnetic layer formed thereon on a substrate, the thin-film laminate is formed on the insulating layer by selecting from Al-based oxide, Si-based nitride, Si, and Si-based oxide. One or two or more barrier layers are formed,
The magnetic layer is formed on the barrier layer.

If a barrier layer made of a nonmagnetic material is interposed between the insulating layer and the magnetic layer, water vapor generated from the insulating layer during the formation of the magnetic layer is blocked by the barrier layer and mixed into the magnetic layer. Can be prevented. Accordingly, the composition of the magnetic layer does not deviate from the original composition, and the fine structure of the magnetic layer becomes uniform, so that a decrease in the effective magnetic permeability μ ′ can be prevented.

In particular, when the insulating layer is formed of a polyimide-based or novolak-based resin, gas generation is increased, and the effect of the present invention is enhanced. It is preferable that the laminate in which the insulating layer is laminated on the substrate is subjected to dehydrobaking in a vacuum, and then a barrier layer is laminated on the laminate.

Furthermore, it is preferable that a barrier layer is laminated on the laminate after subjecting the laminate having the insulating layer laminated on the substrate to surface treatment by sputter etching or ion milling.

Deterioration of magnetic characteristics cannot be completely prevented only by interposing a barrier layer made of a nonmagnetic material between the insulating layer and the magnetic layer. After forming the insulating layer, dehydrobaking to remove gas such as water vapor from the insulating layer, and removing the water vapor etc. on the insulating layer surface by sputter etching or ion milling, and then forming the barrier layer, Deterioration of characteristics can be completely prevented.

When the barrier layer is formed of an Al-based oxide and / or a Si-based nitride, it is particularly preferably Al ₂ O ₃ and / or Si ₃ N ₄ . Also,
When the barrier layer is made of a Si-based oxide, the Si-based oxide is particularly preferably SiO ₂ . It is preferable that the thickness of the barrier layer is 0.05 μm to 1.0 μm. Further, more preferably, from 0.2 μm to 1.0
μm.

In order to prevent the magnetic permeability of the thin film laminate of the present invention from decreasing, the thickness of the barrier layer is preferably 0.05 μm or more. Further, more preferably, 0.2 μm
It is preferable that there is the above. However, since the barrier layer is formed as a lower layer of the magnetic layer, the barrier layer is sandwiched between the upper magnetic layer and the lower magnetic layer, and a gap is formed. When a thin film transformer or a thin film inductor is formed, if there is a gap between the magnetic layers, leakage of magnetic flux occurs and magnetic efficiency is reduced. It has been confirmed by simulation that the magnetic efficiency does not decrease when the thickness of the gap is 1.0 μm or less. Alternatively, the barrier layer may be etched such that the lower magnetic layer and the upper magnetic layer are in close contact with each other.

The magnetic layer comprises an element T containing one or both of Co and Fe, Ti, Zr, Hf,
V, Nb, Ta, Cr, Mo, Si, P, C, W, B,
One or two or more elements M selected from Al, Ga, Ge and rare earth elements and O are mainly contained, and the film structure includes an amorphous phase containing a large amount of elements M and O, It is preferable that a microcrystalline phase mainly composed of T is present.

In the soft magnetic film, the element T is a main component, and Co and Fe are ferromagnetic elements. Therefore,
These Co and Fe are elements that carry magnetism. In particular, in order to obtain a high saturation magnetic flux density, it is preferable that the contents of Co and Fe be as high as possible. If the contents of Co and Fe are too low, the saturation magnetic flux density will decrease. Co has the effect of increasing uniaxial magnetic anisotropy.

Ti, Zr, Hf, V, Nb, Ta, C
one or more elements M selected from r, Mo, Si, P, C, W, B, Al, Ga, Ge and rare earth elements
Is necessary to achieve both soft magnetic characteristics and high resistance. These are easily bonded to oxygen, and form an oxide by bonding. For example, when Hf is used as the element M, Hf becomes O and HfO ₂ to form an oxide.

Further, the specific resistance can be increased by adjusting the content of the oxide of the element M. When the content of the element M is small, the specific resistance decreases. However, if it is too large, the soft magnetic properties of the magnetic film deteriorate.

The crystal structure of the microcrystalline phase is a bcc structure,
It is preferable that the crystal structure is composed of one or more of the hcp structure and the fcc structure, and more preferably that the crystal structure of the microcrystalline phase is mainly composed of the bcc structure. The average crystal grain size of the microcrystalline phase is 30 n
m or less.

The preferred composition of the magnetic layer includes two types, a composition mainly composed of Fe and a composition mainly composed of Co. F
mainly the e, a preferred composition of the magnetic layer, the composition formula is represented by _{(Fe 1-a Co a)} x M y L z O w, element M, T
i, Zr, Hf, V, Nb, Ta, Cr, Mo, Si,
P, C, W, B, Al, Ga, Ge and one or more elements selected from rare earth elements, and the element L is P
t, Ru, Rh, Pd, Ir, Os, Sn, Ti, A
u, Ag, and Cu are one or more elements selected from the group consisting of: a, 0 ≦ a ≦ 0.5, x, y, z,
w is atomic%, 5 ≦ y ≦ 30, 0 ≦ z ≦ 20, 5 ≦ y +
It satisfies the relationship of z ≦ 40, 10 ≦ w ≦ 40, and the balance is x.

More preferably, 0 ≦ a ≦ 0.3,
x, y, z, w are atomic%, 7 ≦ y ≦ 15, 0 ≦ z ≦
5. The relationship of 20 ≦ w ≦ 35 is satisfied, and the balance is x. Still more preferably, a representing the composition ratio a
Is a = 0 and z is z = 0.

Preferably, the element M is Zr and / or Hf. Element L adjusts the corrosion resistance, frequency characteristics, and magnetostriction of the magnetic film. Element L
If too much is added, the soft magnetic characteristics deteriorate and the saturation magnetic flux density decreases. The combination of the material of the barrier layer and the material of the magnetic layer constituting the thin film laminate of the present invention is compatible.

The above element T mainly composed of Fe and Z
r, Hf, V, Nb, Ta, Cr, Mo, Si, P,
A barrier is provided for a magnetic layer formed by a soft magnetic film mainly containing O and one or more elements M selected from C, W, B, Al, Ga, Ge and rare earth elements. Preferably, the layer is formed of an Al-based oxide and / or a Si-based nitride. This is because when the film is formed using a Si-based oxide, the thin film laminate is peeled off. The specific resistance of the soft magnetic film mainly composed of Fe described above is 300 to 15
00 μΩ · cm.

Further, a magnetic layer mainly composed of Co is preferable.
In the case of a composition having a composition formula (Co_1-cT_c) _xM_yX_zO_wIndicated by
And the element T is either Fe or Ni or
The element M includes both elements, and the element M includes Ti, Zr, Hf,
V, Nb, Ta, Cr, Mo, Si, P, C, W, B,
One selected from Al, Ga, Ge and rare earth elements or
X is Au, Ag, Cu, R
u, Rh, Os, Ir, Pt, Pd
Or two or more elements, and the composition ratio is such that 0 ≦ c
≦ 0.7, x, y, z, w are atomic%, 3 ≦ y ≦ 30,
0 ≦ z ≦ 20, 7 ≦ w ≦ 40, 20 ≦ y + z + w ≦ 60
And the balance is x. Again
More preferably, c is 0 ≦ c ≦ 0.3, x, y, z, w
Is atomic%, 7 ≦ y ≦ 15, 20 ≦ w ≦ 35, 0 ≦ z ≦
19, 30 ≦ x + y + z ≦ 50, and the remainder is
x.

The microcrystalline phase of the magnetic layer having this composition contains the element M
, The specific resistance increases and eddy current loss at high frequencies can be reduced. Au, Ag, Pt, P
Element X, which is one or more of d, Cu, Ru, Rh, Os, and Ir, improves the corrosion resistance and frequency characteristics of the soft magnetic film in the present invention, but its content is too large. In this case, the soft magnetic properties, particularly the saturation magnetization, are undesirably reduced too much.

When the element T is Fe, Co and Fe
Is 0.3 ≦ {Co / (Co + Fe)} ≦ 0.
8 is preferable.

In the present invention, as one element constituting the soft magnetic film, N instead of O or N together with O is used.
May be used. In this case, the composition ratio of N or the composition ratio of O + N is the same as that of O, ie, 7 to 40 at%.
And more preferably 20 to 35 at%. The specific resistance of the soft magnetic film mainly composed of Co described above is 10
00 to 3500 μΩ · cm.

The magnetic layer is made of an element T mainly composed of Co as a main component and Ti, Zr, Hf, V, Nb, T
a, Cr, Mo, Si, P, C, W, B, Al, Ga,
When the barrier layer is formed of a soft magnetic film mainly containing O and one or more elements M selected from Ge and rare earth elements, the barrier layer is formed of Si and / or a Si-based oxide. Is preferred. When formed of an Al-based oxide, the magnetic characteristics of the formed thin film stack vary, and reproducibility cannot be obtained.

Further, the present invention has at least a lower core layer, an upper core layer facing the lower core layer via a magnetic gap at a portion facing the recording medium, and a coil for applying a magnetic field to both core layers. In the thin-film magnetic head, three layers of an insulating layer stacked on the substrate, a barrier layer stacked on the insulating layer, and the lower core layer stacked on the barrier layer, and / or An insulating layer covering the coil laminated on the lower core layer, a barrier layer laminated on the insulating layer, and the upper core layer laminated on the barrier layer are formed by the three layers described above. Characterized by being formed by a thin film laminate of the above.

Further, according to the present invention, a first magnetic layer, a second magnetic layer, and one magnetic layer between the first magnetic layer and the second magnetic layer.
In a thin film transformer having a secondary coil and a secondary coil,
Three layers of an insulating layer stacked on a substrate, a barrier layer stacked on the insulating layer, and the first magnetic layer stacked on the barrier layer, and / or the first magnetic layer An insulating layer covering the primary coil and the secondary coil laminated on a layer, a barrier layer laminated on the insulating layer, and a second magnetic layer laminated on the barrier layer. Three layers,
It is characterized by being formed by the aforementioned thin film laminate.

Further, according to the present invention, there is provided a thin film inductor having a first magnetic layer, a second magnetic layer, and a coil between the first magnetic layer and the second magnetic layer. A layer, a barrier layer laminated on the insulating layer, and the first magnetic layer 3 laminated on the barrier layer.
And / or an insulating layer covering the coil laminated on the first magnetic layer, a barrier layer laminated on the insulating layer, and a second layer laminated on the barrier layer.
It is characterized in that three layers of magnetic layers are formed by the above-mentioned thin film laminate.

[0032] The method for producing a thin film laminate according to the present invention is a method for producing a thin film laminate comprising a step of laminating an insulating layer on a substrate and a step of laminating a magnetic layer on the insulating layer.
On the insulating layer laminated on the substrate, an Al-based oxide, S
forming a barrier layer made of one or two or more kinds selected from i-based nitride, Si, and Si-based oxide; and laminating the magnetic layer on the barrier layer. It is a feature.

The method further comprises the step of subjecting the insulating layer to dehydrobaking in a vacuum after forming the insulating layer,
Preferably, the magnetic layer is formed on the insulating layer, or after the insulating layer is formed, the insulating layer has a surface treatment by sputter etching or ion milling. Preferably, the magnetic layer is formed. Further, it is preferable that the insulating layer is formed of a polyimide-based or novolak-based resin.

The thickness of the barrier layer is 0.05 μm to
It is preferable to form it within a range of 1.0 μm. Also,
More preferably, the thickness of the barrier layer is from 0.2 μm to
It is within the range of 1.0 μm.

Further, the barrier layer is formed of Si and / or a Si-based oxide, and the magnetic layer is formed of
element T mainly composed of o, Ti, Zr, Hf, V, N
b, Ta, Cr, Mo, Si, P, C, W, B, Al,
One or two or more elements M selected from Ga, Ge and rare earth elements, and O are mainly contained, and the film structure includes an amorphous phase containing a large amount of the elements M and O; It is preferable that a microcrystalline phase mainly composed of a magnetic layer is mixed, and the microcrystalline phase of the magnetic layer is formed of a soft magnetic film containing an oxide of the element M.

As one element constituting the magnetic layer, N may be used instead of O, or N together with O. The specific resistance of the magnetic layer is 1000-3500
It is preferably μΩ · cm.

The barrier layer is formed of an Al-based oxide and / or a Si-based nitride, and the magnetic layer is formed of an element T mainly composed of Fe and Zr, Hf, V, N
b, Ta, Cr, Mo, Si, P, C, W, B, Al,
One or two or more elements M selected from Ga, Ge and rare earth elements, and O are mainly contained, and the film structure includes an amorphous phase containing a large amount of the elements M and O; May be formed of a soft magnetic film in which a microcrystalline phase mainly composed of is mixed.
The magnetic layer preferably has a specific resistance of 300 to 1500 μΩ · cm.

[0038]

FIG. 10 is a sectional view showing a thin film transformer formed using the thin film laminate of the present invention. In this thin film transformer, an extraction electrode 210 is formed on a substrate 21. The extraction electrode 210 also serves as a substrate wiring. A first magnetic layer 24 is stacked on an insulating layer 22 made of a polyimide resin with a barrier layer 23 interposed therebetween. Here, three layers of the insulating layer 22, the barrier layer 23, and the first magnetic layer 24 are formed by the thin film laminate of the present invention.

Further, an insulating layer 25 made of a polyimide resin
Are sequentially laminated, and a spiral-shaped primary coil 26 and a secondary coil 27 are embedded in the insulating layer 25. The center of the primary coil 26 is connected to the extraction electrode 210 by through holes formed in the insulating layer 25, the first magnetic layer 24, the barrier layer 23, and the insulating layer 22. Similarly, the central portion of the secondary coil 27 is also connected to another extraction electrode (not shown) by through holes formed in the insulating layer 25, the first magnetic layer 24, the barrier layer 23, and the insulating layer 22. ing.

Further, a second magnetic layer 29 is formed on the insulating layer 25 with a barrier layer 28 interposed therebetween. Here, the three layers of the insulating layer 25, the barrier layer 28, and the second magnetic layer 29 are formed by the thin film laminate of the present invention. When the primary coil 26 and the secondary coil 27 are energized, the insulating layer 25 insulates the primary coil 26 and the secondary coil 27 from each other, as well as the primary coil 26, the secondary coil 27, and the first magnetic layer 24. And the second magnetic layer 29 is electrically and magnetically insulated. The insulating layer 25 is formed by baking after paste printing or spin coating, hot-dip plating, thermal spraying, vapor phase plating, vacuum deposition, sputtering,
It is formed by a method such as ion plating. The insulating layer 25 may be formed by laminating a novolak resin material.

The insulating layer 22 or the insulating layer 25 is formed on the substrate 21.
Is subjected to dehydrobaking in a vacuum to blow off gas such as water vapor, particularly on the surface of the insulating layer 22 or 25, and then sputter etching or ion milling to remove water vapor or the like adhering to the surface. Excludes gas.

The barrier layers 23 and 28 are formed on the insulating layer 22 or 25 after the above two steps.
Before laminating the barrier layer 23 or 28, the insulating layer 22 or 2
5 and then the insulating layer 22 or 25
The first magnetic layer 24 via the barrier layer 23 or 28
Alternatively, when the second magnetic layer 29 is laminated, both magnetic layers 24,
29 can be completely prevented from deteriorating the magnetic characteristics.

The thickness of the barrier layers 23 and 28 is 0.05 to
It is preferably 1.0 μm. When the thickness is 0.05 μm or less, the barrier layer has no effect, and when the thickness is 1.0 μm or more, the transformer efficiency of the thin film transformer decreases. Further, in order to more reliably obtain the effect of the barrier layer, the thickness of the barrier layer is more preferably set to 0.02 to 1.0 μm.

[0044] In the present invention, the first magnetic layer 24 and the second magnetic layer 29 is made of a _{(Fe 1-a Co a)} x M y L z O w Fe
And a soft magnetic film mainly composed of However,
Element M is Ti, Zr, Hf, V, Nb, Ta, Cr,
One or more elements selected from Mo, Si, P, C, W, B, Al, Ga, Ge and rare earth elements;
Element L is Pt, Ru, Rh, Pd, Ir, Os, Sn,
It is one or more elements selected from Ti, Au, Ag, and Cu, and the composition ratio a is 0 ≦ a ≦ 0.5, x,
y, z and w are atomic%, 5 ≦ y ≦ 30, 0 ≦ z ≦ 20,
The relationship of 5 ≦ y + z ≦ 40 and 10 ≦ w ≦ 40 is satisfied, and the balance is x.

More preferably, a indicating the composition ratio of the magnetic layers 24 and 29 is 0 ≦ a ≦ 0.3, x, y, z and w are atomic%, and 7 ≦ y ≦ 15 and 0 ≦ z. ≦ 5, 20 ≦ w ≦ 35
Is satisfied, and the balance is x. Still more preferably, a indicating the composition ratio is a = 0, and z is z =
0. The element M is Zr and / or H
It is preferably f.

With the above-described soft magnetic film mainly composed of Fe, it is possible to obtain a specific resistance of about 300 μΩ · cm to 1500 μΩ · cm.

The first magnetic layer 24 and the second magnetic layer 29
When the barrier layers 23 and 28 are formed of a soft magnetic film having the above composition, the barrier layers 23 and 28 are preferably formed of an Al-based oxide and / or a Si-based nitride. Preferred as the Al-based oxide is Al ₂ O ₃ , and preferred as the Si-based nitride is Si ₃ N ₄ .

[0048] Alternatively, the first magnetic layer 24 and the second magnetic layer 29, formed of a soft magnetic film mainly made of Co, composition formula represented by _{(Co 1-c T c)} x M y X z O w You may. However,
The element T is an element containing one or both of Fe and Ni, and the element M is Ti, Zr, Hf, V, N
b, Ta, Cr, Mo, Si, P, C, W, B, Al,
X is one or more elements selected from Ga, Ge and rare earth elements, and X is Au, Ag, Cu, Ru, R
h, Os, Ir, Pt, Pd, and at least one element selected from the group consisting of: 0 ≦ c ≦ 0.
7, x, y, z, w are atomic%, 3 ≦ y ≦ 30, 0 ≦ z
≦ 20, 7 ≦ w ≦ 40, 20 ≦ y + z + w ≦ 60, and the balance is x.

More preferably, c representing the composition formula of the first magnetic layer 24 and the second magnetic layer 29 is 0 ≦ c ≦ 0.
3, x, y, z, w are atomic%, 7 ≦ y ≦ 15, 20 ≦
The relationship of w ≦ 35, 0 ≦ z ≦ 19, and 30 ≦ x + y + z ≦ 50 is satisfied, and the balance is x.

When the element T is Fe, Co
And the concentration ratio of Fe and 0.3 ≦ {Co / (Co + Fe)}
When ≦ 0.8, more excellent soft magnetic characteristics and frequency characteristics can be obtained. More preferably, the ratio of Co and Fe should be 7: 3. Further, N (nitrogen) may be used instead of O (oxygen), or N may be used together with O, as one element constituting the composition of the magnetic layer mainly composed of Co.

The first magnetic layer 24 and the second magnetic layer 29
Has a film structure in which a microcrystalline phase is mixed with an amorphous phase. Since the amorphous phase surrounding the microcrystalline phase is mainly formed of an oxide of the element M, the specific resistance of the amorphous phase is as follows:
It has a high value.

In the case of a soft magnetic film mainly composed of Co, 10
It is possible to obtain a specific resistance of about 00 μΩ · cm to 3500 μΩ · cm. Further, when the soft magnetic film contains Co, the uniaxial anisotropy of the soft magnetic film shows a very high value, and a magnetic permeability excellent in frequency characteristics can be obtained.

The first magnetic layer 24 and the second magnetic layer 29
Is formed using a sputtering method, an evaporation method, or the like. RF sputtering, DC sputtering,
Use existing magnetron sputtering, tripolar sputtering, ion beam sputtering, facing target type sputtering, etc.

As a method for adding O (oxygen) to the soft magnetic film, reactive sputtering is performed in a mixed gas atmosphere (Ar + O ₂ ) in which O ₂ gas is mixed with an inert gas such as Ar. Or an oxide of element M (HfO
₂ ) is effective in sputtering a composite target using a chip in an Ar atmosphere or an Ar + O ₂ mixed gas atmosphere.

Further, it can be manufactured in an Ar + O ₂ mixed gas atmosphere using a composite target in which various pellets such as an element M such as a rare earth element or an element T are arranged on a target of Co or Fe. The crystal structure of the microcrystalline phase in the soft magnetic film is bcc structure, hcp structure, f
Any one or a mixture of two or more of the cc structures may be used. More preferably, most or all of the crystal structure is formed from the bcc structure. The average crystal grain size of the microcrystalline phase is preferably 30 nm or less.

The primary coil 26 and the secondary coil 27 are
It is made of a highly conductive metal material such as copper, silver, gold, aluminum or an alloy thereof, and is electrically connected in series, vertically or horizontally via an insulating film according to inductance, DC superimposition characteristics, size, etc. Can be arranged. The primary coil 26 and the secondary coil 27 can be formed into various shapes by forming a conductive layer on a substrate and then performing photoetching. As a method for forming the conductive layer, an appropriate method such as press bonding, plating, metal spraying, vacuum evaporation, sputtering, ion plating, and screen printing firing may be used.

This thin-film transformer is provided with a barrier layer 28 on a thin-film laminated body of the present invention in which the first magnetic layer 24 is formed on the insulating layer 22 via a barrier layer 23 or a barrier layer 28. Further, the second magnetic layer 29 is formed by the thin film laminate of the present invention in which the second magnetic layer 29 is formed by lamination.

When a barrier layer is interposed between the insulating layer and the magnetic layer, it is possible to prevent water vapor and the like generated from the insulating layer from being blocked by the barrier layer during the formation of the magnetic layer and from being mixed into the magnetic layer. . Accordingly, the composition of the magnetic layer does not deviate from the original composition, and the fine structure of the magnetic layer becomes uniform, so that a decrease in the effective magnetic permeability μ ′ can be prevented. Therefore, compared to a thin film transformer formed using a conventional thin film laminate without a barrier layer, the magnetic properties of the magnetic core are improved, and the transformer efficiency is improved.

In the thin film transformer shown in FIG.
The barrier layer 28 is sandwiched between the upper second magnetic layer 29 and the lower first magnetic layer 24, and a gap is formed. If there is a gap between the first magnetic layer and the second magnetic layer, leakage of magnetic flux occurs, and magnetic efficiency decreases. It has been confirmed by simulation that the magnetic efficiency does not decrease if the thickness of the gap is 1 μm or less. However, as shown in FIG.
After the barrier layer 48 is formed so that the end of the second magnetic layer 49 on the upper surface is in close contact with the first magnetic layer 44, the barrier layer on the end of the first magnetic layer 44 is removed by etching. Magnetic layer 4
9 may be closely attached to the periphery.

FIG. 11 shows that the thin film laminate of the present invention
FIG. 3 is a cross-sectional view of a case where a thin-film inductor having a magnetic core and a lower layer portion is formed. In the thin-film inductor of this example, an extraction electrode 39 is formed on a substrate 31. The extraction electrode 39 also serves as a substrate wiring. On an insulating layer 32 made of a polyimide resin via a barrier layer 33,
The first magnetic layer 34 is laminated. Here, the three layers of the insulating layer 32, the barrier layer 33, and the first magnetic layer 34 are formed by the thin film laminate of the present invention.

An insulating layer 35 made of a polyimide resin is laminated on the first magnetic layer 34, and a spiral coil-shaped planar coil 36 is embedded in the insulating layer 35. Plane coil 36
Of the insulating layer 35, the first magnetic layer 34, the barrier layer 3
3, and through holes formed in the insulating layer 32 are connected to the extraction electrode 39. Further, the insulating layer 3
The second magnetic layer 38 is formed on the layer 5 via a barrier layer 37. Here, the insulating layer 35, the barrier layer 37, and
Three layers of the second magnetic layer 38 are formed by the thin film laminate of the present invention. The insulating layers 32 and 35 may be formed from a novolak resin.

The dehydrobaking in a vacuum and the sputter etching or ion milling before laminating the barrier layer on the insulating layer are the same as those of the thin film transformer. The materials of the barrier layers 33 and 37 are the same as those of the thin film transformer. Also, the thickness of the barrier layer is preferably 0.05 μm to 1.0 μm as in the case of the thin film transformer. Further, more preferably, 0.2 μm to 1.0 μm
It is.

The first magnetic layer 34 and the second magnetic layer 38
It is formed from the same soft magnetic film as the material of the magnetic layer constituting the thin film transformer. Preferred combinations of the materials of the first magnetic layer 34 and the second magnetic layer 38 and the materials of the barrier layers 33 and 37 are the same as those of the thin film transformer.

This thin-film inductor is formed by the thin-film laminate of the present invention in which a magnetic layer is laminated on an insulating layer via a barrier layer. Therefore, the magnetic properties of the magnetic layer are improved as compared with a thin-film inductor formed using a conventional thin-film laminate without a barrier layer.
The efficiency of the inductor is improved.

In the thin-film inductor of FIG.
Although a gap is formed between the magnetic layer 38 and the lower first magnetic layer 34, the lower first magnetic layer 34 and the upper
After forming the barrier layer 37 so that the end of the magnetic layer 38 is in close contact, the barrier layer on the end of the first magnetic layer 34 may be removed by etching.

FIG. 13 is a longitudinal sectional view of the thin film magnetic head of the present invention. The thin-film magnetic head shown in FIG. 13 is an inductive head for writing a signal to a recording medium such as a hard disk. The inductive head is provided on a trailing side end surface of a slider of a floating magnetic head facing a recording medium such as a hard disk. Further, an inductive head may be stacked on the read head utilizing the magnetoresistance effect.

Reference numeral 54 shown in FIG. 13 is a lower core layer formed of a soft magnetic film. The lower core layer 54 is laminated on the insulating layer 52 made of a resist material such as polyimide laminated on the substrate 51 via the barrier layer 53. Here, the three layers of the insulating layer 52, the barrier layer 53, and the lower core layer 54 are formed by the thin film laminate of the present invention.

On this lower core layer 54, an insulating layer 55 made of a resist material is formed. On the insulating layer 55, a coil 56 is spirally formed of a conductive material having a low electric resistance such as Cu. An insulating layer 57 is formed on the coil 56 with a resist material. On the insulating layer 57, via a barrier layer 58,
An upper core layer 59 is formed. Here, the insulating layer 5
7, three layers of the barrier layer 58 and the upper core layer 59 are formed by the thin film laminate of the present invention.

The tip portion 59a of the upper core layer 59 is joined to the lower core layer 54 via the barrier layer 58 at the portion facing the recording medium. The barrier layer 58 forms a magnetic gap G of the thin-film magnetic head. Also the upper core layer 5
9 is magnetically connected to the lower core layer 54 via holes formed in the barrier layer 58 and the insulating layer 55.

In the inductive head for writing,
When a recording current is applied to the coil 56, the lower core layer 54
In addition, a recording magnetic field is induced in the upper core layer 59, and a magnetic signal is recorded on a recording medium such as a hard disk by a leakage magnetic field from a magnetic gap portion (barrier layer) between the lower core layer 54 and the tip 59a of the upper core layer 59. Is done.

When reading, it is also possible to pick up the leakage magnetic field from the magnetic recording recorded on the recording medium by the portion of the magnetic gap, convert it to an electric signal by the coil 56, and take out the output.

Before laminating the barrier layer 53 or 58 on the insulating layer 52 or 57, dehydrobaking in a vacuum, sputter etching or ion milling the insulating layer 52 or 57 can be performed using a thin film. Same as transformer. The material of the barrier layers 53 and 58 is shown in FIG.
This is the same as the thin film transformer shown in FIG. Also, the barrier layer 5
The thickness of 3,58 is 0.05 μm, like the thin film transformer.
It is preferably from 1.0 to 1.0 μm. Further, more preferably, it is 0.2 μm to 1.0 μm.

The upper core layer 59 and the lower core layer 54
It is formed from the same soft magnetic film as the material of the magnetic layer constituting the thin film transformer. Preferred combinations of the materials of the upper core layer and the lower core layer and the material of the barrier layer are the same as those of the thin film transformer.

This thin-film magnetic head is formed on a thin-film laminate or insulating layer 57 of the present invention in which a lower core layer (first magnetic layer) 54 is formed on an insulating layer 52 via a barrier layer 53. The upper core layer (second
The magnetic layer 59 is formed by the thin film laminate of the present invention in which the magnetic layers 59 are laminated.

Accordingly, the magnetic properties of the core layer are improved as compared with a thin film magnetic head formed using a conventional thin film laminate having no barrier layer, and thus the efficiency of the magnetic head is improved.

[0076]

FIG. 7 shows a magnetic layer (Fe ₅₅ H) on a glass substrate.
6 is a graph showing the relationship between frequency and magnetic permeability of a thin film laminate formed by laminating f ₁₁ O ₃₄ ). When the magnetic layer was directly laminated on the glass substrate, no deterioration in the magnetic properties was observed. At 40 MHz, the effective magnetic permeability μ ′ was 1686.6.
8. The magnetic permeability μ ″ (indicating loss) in the imaginary part is 32
8.52.

However, when the magnetic layer is laminated on the substrate via an insulating layer made of polyimide, the effective magnetic permeability becomes about 20%.
It drops to about 0. This phenomenon is a phenomenon commonly observed when a magnetic layer is laminated on a resin. The reason that the effective magnetic permeability is lowered is considered to be that gas such as water vapor is generated from the insulating layer when the magnetic layer is formed by sputtering.

Therefore, in order to prevent the deterioration of the effective magnetic permeability, an attempt was made to dehydrobake the insulating layer in a vacuum, sputter etching, and to form a barrier layer between the insulating layer and the magnetic layer. .

FIGS. 1 to 3 are graphs showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating a magnetic layer after subjecting a substrate on which a polyimide is laminated to a dehydrobaking treatment for one hour. is there. The temperature of the dehydrobake is 150 ° C. in FIG. 1, 250 ° C. in FIG. 2, and 300 ° C. in FIG.

The magnetic layer was formed by forming a soft magnetic film having a composition of Fe ₅₅ Hf ₁₁ O ₃₄ using a high frequency bipolar sputtering apparatus. Using a composite target using Hf pellets on an Fe target, Ar + 0.1 to
Sputtering was performed in a mixed gas atmosphere of 1.0% O ₂ .
The main sputtering conditions are as follows.

Preliminary evacuation: 5 × 10 ⁻⁷ Torr or less High frequency input: 200 W Ar + O 2 gas pressure: 6 to 8 × 10 ⁻³ Torr Substrate: glass substrate (indirect water cooling) Sputtering time is as follows. It was adjusted to become.

The results at 100 MHz are as follows: at 150 ° C., the effective magnetic permeability μ ′ is 192.42; at the imaginary part, the magnetic permeability μ ″ (indicating loss) is 29.52; '770.84, permeability μ "1 in the imaginary part
At 66.96 and 300 ° C., the effective magnetic permeability μ′53
7.55, the magnetic permeability μ in the imaginary part is 129.24. These results indicate that it is best to perform dehydrobake at 250 ° C.

The reason why the effective magnetic permeability is increased by performing the dehydrobake is that gas such as water vapor is blown out of the insulating layer made of the polyimide resin.
This is presumed to reduce the amount of gas mixed into the magnetic layer when the magnetic layer is formed by sputtering. However, deterioration of magnetic properties cannot be completely prevented yet.

FIG. 4 shows that a polyimide laminated substrate
It is a graph which shows the relationship between the frequency and the magnetic permeability of the thin film laminated body which laminated | stacked the magnetic layer after performing sputter etching of 00W and 20 minutes. The material of the magnetic layer and the sputtering conditions are the same as in FIGS.

The result at 100 MHz is that the effective magnetic permeability μ ′
528.53, permeability μ ”in imaginary part (indicating loss)
135.44. In sputter etching, gases and the like adhering to the surface of the insulating layer can be removed.
It is presumed that when forming the magnetic layer by sputtering, the amount of gas mixed into the magnetic layer could be reduced. But,
Deterioration of magnetic properties cannot be completely prevented only by sputter etching.

FIG. 5 shows that the substrate on which the polyimide was
50 ° C, 1 hour dehydrobake treatment and 100W, 2
0 minute sputter etching, and the barrier layer is made of Al ₂ O ₃
7 is a graph showing the relationship between the frequency and the magnetic permeability of a thin-film laminate formed by laminating a magnetic layer on the thin film formed in FIG. The material of the magnetic layer and the sputtering conditions are the same as in FIGS.

For forming the barrier layer, a high frequency bipolar sputtering apparatus was used. Using an Al target, Ar + 0.1
It was sputtered in a mixed gas atmosphere to 2.0% O _2. Al ₂ O ₃ may be used for the target. The main sputtering conditions are as follows.

Preliminary evacuation: 5 × 10 ⁻⁷ Torr or less High frequency input: 200 W Ar + O 2 gas pressure: 6 to 8 × 10 ⁻³ Torr Substrate: glass substrate (indirect water cooling) The sputtering time was as follows: the barrier layer thickness was 0.2 μm. It was adjusted to become.

At 40 MHz, the effective magnetic permeability μ′1
635.72, permeability μ ”359.39 in the imaginary part
Becomes This value is the same as the effective magnetic permeability μ′168.68 and the magnetic permeability μ ″ 328.52 in the imaginary part, which are the results of the laminate in which the magnetic layer is laminated on the glass (FIG. 7).

FIG. 6 is a graph showing the relationship between the thickness of the barrier layer and the effective magnetic permeability of the thin film laminate. mu ₁ is on the glass, the effective permeability of the film laminate formed by laminating a magnetic layer via a barrier layer composed of Al ₂ O _3, μ ₂ consists on the polyimide resin, also Al ₂ O ₃ barrier It is the effective magnetic permeability of a thin-film laminate in which magnetic layers are laminated via layers.

Before laminating the barrier layers, at 250 ° C., 1
Time dehydro bake and sputter etching at 100 W for 20 minutes are performed. The material of the magnetic layer, the film forming method, and the film forming method of the barrier layer are the same as those in FIG.

Since μ ₁ does not depend on the thickness of the barrier layer, it can be used as a comparison with μ ₂ .
Looking at the graph showing the relationship between the thickness and mu ₂ and mu ₁ ratio of the barrier layer, rapidly mu as the thickness of the barrier layer becomes thicker
₂ of the value increases, in 0.05μm more than μ ₂ 1000
And the value of μ ₂ / μ ₁ also exceeds 0.7. Further, the value of μ ₂ / μ ₁ becomes approximately 1 at 0.2 μm or more.

Accordingly, it has been found that a remarkable effect can be obtained by setting the thickness of the barrier layer to 0.05 μm or more in order to prevent the magnetic properties of the magnetic layer from deteriorating. Further, more preferably, the thickness of the barrier layer is 0.2 μm or more.

On the other hand, the thickness of the barrier layer is preferably 1.0 μm or less. Using the thin film laminate of the present invention,
When an inductive magnetic element is formed, a gap is formed between the upper magnetic layer and the lower magnetic layer. However, it has been confirmed by simulation that if the thickness of the gap is 1 μm or less, the magnetic efficiency does not decrease. Has been confirmed.

Therefore, after performing dehydrobaking at 250 ° C. for 1 hour and sputter etching at 100 W for 20 minutes, and then laminating the magnetic layer via a barrier layer made of Al ₂ O ₃ , it becomes possible to form a film on polyimide. It is possible to prevent the magnetic properties of the magnetic layer from deteriorating when the magnetic layers are stacked.

FIG. 8 is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating a magnetic layer on a substrate laminated with polyimide without a barrier layer.

The magnetic layer has a composition of Co ₄₄ Fe ₁₉ Hf ₁₅ O.
_The soft magnetic film No. ₂₂ was formed by using a high frequency bipolar sputtering apparatus. On the Co target, F
20 e-chips and 20 Hf-chips were arranged, and sputtering was performed in a mixed gas atmosphere of Ar + 0.1 to 3.0% O2. The main sputtering conditions, the composition is Fe _{5 5}
This is the same as when a soft magnetic film of Hf ₁₁ O ₃₄ is formed. The sputtering time is adjusted so that the thickness of the magnetic layer becomes 1.0 μm. The effective magnetic permeability μ ′ at 100 MHz is 25.43, the magnetic permeability μ ″ in the imaginary part is 4.06, and the Q value is 6.26.

FIG. 9 is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating a magnetic layer after forming a barrier layer of SiO ₂ on a polyimide laminated substrate. The composition of the magnetic layer was Co ₄₄ Fe ₁₉ as in FIG.
Hf ₁₅ O ₂₂ , and the sputtering method and sputtering conditions for forming the magnetic layer are the same as those in FIG. The formation of the barrier layer
This was performed by sputtering. The sputtering method and sputtering conditions are the same as when the barrier layer was formed of Al ₂ O ₃ .

The effective magnetic permeability μ ′ at 100 MHz is 1
03.70, and the magnetic permeability μ ″ in the imaginary part is 3.5.
The values of 0 and Q were 30.5, indicating that the magnetic properties of the magnetic layer were significantly improved as compared with the case where the barrier layer was not formed.

When the specific resistance of the magnetic layer of FIGS. 8 and 9 was measured, the former was 718.9 (μΩcm).
The latter was found to be greatly improved to 3029.9 (μΩcm). That is, the barrier layer formed between the insulating layer and the magnetic layer improves the quality of the magnetic layer by preventing gas such as water vapor generated from the insulating layer made of polyimide resin or the like from being mixed into the magnetic layer, and It also has the effect of increasing the specific resistance of the magnetic layer, and also plays a role in suppressing high-frequency loss.

[0101]

As described above in detail, the thin film laminate of the present invention is obtained by subjecting a laminate in which an insulating layer is laminated on a substrate to dehydrobaking, preferably in a vacuum, and further performing sputter etching or ion milling. Is formed by laminating a magnetic layer on the insulating layer via a barrier layer made of a non-magnetic material after the surface treatment, thereby preventing gas such as water vapor from being mixed into the magnetic layer when the magnetic layer is laminated. be able to. Accordingly, the composition of the magnetic layer does not deviate from the original composition, and the fine structure of the magnetic layer becomes uniform, so that a decrease in the effective magnetic permeability μ ′ can be prevented.

The thin-film transformer, thin-film inductor and thin-film magnetic head formed using this thin-film laminate have a magnetic characteristic of a magnetic layer which is smaller than that of a thin-film transformer formed using a conventional thin-film laminate. As a result, the efficiency is improved.

[Brief description of the drawings]

FIG. 1 shows a substrate on which polyimide is laminated is subjected to a dehydrobake treatment at 150 ° C. for one hour, and then a magnetic layer (Fe ₅₅ H
₁₁ is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating f ₁₁ O ₃₄ ).

FIG. 2 shows a substrate on which polyimide is laminated is subjected to a dehydrobake treatment at 250 ° C. for one hour, and then a magnetic layer (Fe ₅₅ H
₁₁ is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating f ₁₁ O ₃₄ ).

FIG. 3 shows a substrate on which polyimide is laminated is subjected to a dehydrobake treatment at 300 ° C. for one hour, and then a magnetic layer (Fe ₅₅ H
₁₁ is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating f ₁₁ O ₃₄ ).

FIG. 4 shows a 100 W, 20 W
After the sputter etching for the magnetic layer (Fe ₅₅ H
₁₁ is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating f ₁₁ O ₃₄ ).

FIG. 5 is a diagram showing a substrate laminated with polyimide, subjected to a dehydrobake treatment at 250 ° C. for 1 hour and sputter etching at 100 W for 20 minutes to form a barrier layer of Al ₂ O ₃ and a magnetic layer (Fe ₅₅ Hf). ₁₁ is a graph showing the relationship between frequency and magnetic permeability of a thin film laminate formed by laminating ₁₁ O ₃₄ ).

FIG. 6 is a graph showing the relationship between the thickness of the barrier layer and the effective magnetic permeability of the thin film stack. μ ₁ : Effective magnetic permeability of a thin-film laminate in which a magnetic layer is laminated on a glass via a barrier layer made of Al ₂ O ₃ . μ ₂ : Effective magnetic permeability of a thin film laminate in which a magnetic layer is laminated on a polyimide resin via a barrier layer.

FIG. 7 shows a magnetic layer (Fe ₅₅ Hf ₁₁ O ₃₄ ) on a glass substrate.
Is a graph showing the relationship between the frequency and the magnetic permeability of a thin-film laminate formed by laminating.

FIG. 8: A magnetic layer (Co ₄₄
7 is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating Fe ₁₉ Hf ₁₅ O ₂₂ ).

FIG. 9 shows that a barrier layer is formed on a substrate on which polyimide is laminated.
After being formed of iO ₂ , the magnetic layer (Co ₄₄ Fe ₁₉ Hf ₁₅ O
₂₂ ) is a graph showing the relationship between the frequency and the magnetic permeability of a thin film laminate formed by laminating ₂₂ ).

FIG. 10 is a sectional view of a thin film transformer formed using the thin film laminate of the present invention.

FIG. 11 is a sectional view of a thin-film inductor formed using the thin-film laminate of the present invention.

FIG. 12 is a sectional view of another thin film transformer formed using the thin film laminate of the present invention.

FIG. 13 is a longitudinal sectional view of a thin film magnetic head formed using the thin film laminate of the present invention.

FIG. 14 shows a thin film transformer in which a magnetic core layer and a lower layer portion are formed by a conventional thin film laminate.

[Explanation of symbols]

1, 21, 31, 51 Substrate 2, 4, 22, 25, 32, 35, 52, 55, 57
Insulating layer 3, 24, 34, 44 First magnetic layer 7, 29, 38, 49 Second magnetic layer 54 Lower core layer 59 Upper core layer 5, 26 Primary coil 6, 27 Secondary coil 36, 56 Coil 8, 210, 39, extraction electrode 23, 28, 33, 37, 48, 53, 58 barrier layer

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Kumiko Ominato, Inventor 1-7, Yutani Otsukacho, Ota-ku, Tokyo Alps Electric Co., Ltd. (72) Inventor Yoshito Sasaki 1-7, Yukitani-Otsukacho, Ota-ku, Tokyo Alp (72) Inventor Takashi Hatanai 1-7 Yukitani Otsukacho, Ota-ku, Tokyo Alps Electric Co., Ltd. F-term (reference) 4J043 RA34 ZA46 ZB11 ZB47 5D033 BA03 BA71 DA03 5E049 AA01 AA04 AA09 AC00 BA12 BA14 DB14 DB16 DB20 5E070 AA01 AA11 AB03 BA20 BB01 CB03 CB04 CB12 CB20 CC02 CC10

Claims (34)

[Claims] 1. A thin film laminate having an insulating layer on a substrate and a magnetic layer formed thereon, wherein an Al-based oxide, a Si-based nitride, a Si, a Si-based A thin film laminate comprising a barrier layer made of one or more oxides selected from the group consisting of oxides and the magnetic layer formed on the barrier layer. 2. The thin film laminate according to claim 1, wherein the insulating layer is a polyimide-based or novolak-based resin. 3. The method according to claim 1, wherein the barrier layer comprises an Al-based oxide and / or
Or an Si-based nitride, wherein the Al-based oxide is A
_3. The thin film laminate according to claim 1, wherein the Si nitride is l ₂ O ₃ and the Si nitride is Si ₃ N _{4. 4} . 4. The method according to claim 1, wherein the barrier layer is made of Si and / or S
3. The thin film laminate according to claim 1, comprising an i-based oxide, wherein the Si-based oxide is SiO ₂ . 5. The barrier layer has a thickness of 0.05 μm or less.
The thin film laminate according to any one of claims 1 to 4, which has a thickness of 1.0 µm. 6. The barrier layer has a thickness of 0.2 μm or less.
The thin film laminate according to any one of claims 1 to 5, which has a thickness of 1.0 µm. 7. The magnetic layer according to claim 1, wherein the magnetic layer comprises an element T containing one or both of Co and Fe, and Ti, Zr, H
f, V, Nb, Ta, Cr, Mo, Si, P, C, W,
One or two or more elements M selected from B, Al, Ga, Ge and rare earth elements, and mainly O, and the film structure has an amorphous phase containing a large amount of the elements M and O. And a microcrystalline phase mainly composed of element T and element T.
A thin film laminate according to any one of the above. 8. The thin film laminate according to claim 7, wherein the crystal structure of the microcrystalline phase comprises one or more of a bcc structure, an hcp structure, and an fcc structure. 9. The crystal structure of the microcrystalline phase is mainly bcc
9. The thin film laminate according to claim 8, comprising a structure. 10. An average crystal grain size of the microcrystalline phase is 30.
The thin film laminate according to any one of claims 7 to 9, wherein the thickness is not more than nm. 11. The magnetic layer has a composition formula of (Fe _1-a C).
indicated by _{o a) x M y L z} O w, element M, Ti, Zr, H
f, V, Nb, Ta, Cr, Mo, Si, P, C, W,
B, Al, Ga, Ge and one or more elements selected from rare earth elements, and the element L is Pt, Ru, R
h, Pd, Ir, Os, Sn, Ti, Au, Ag, Cu
One or more elements selected from the group consisting of: a is 0 ≦ a ≦ 0.5, x, y, z, and w are atomic%;
5 ≦ y ≦ 30, 0 ≦ z ≦ 20, 5 ≦ y + z ≦ 40, 10
The thin film laminate according to any one of claims 7 to 10, wherein a relationship of ≤ w ≤ 40 is satisfied, and the balance is x. 12. The value a indicating the composition ratio of the magnetic layer is 0 ≦ 0.
a ≦ 0.3, x, y, z and w are atomic%, and 7 ≦ y ≦ 1
The thin film laminate according to claim 11, which satisfies a relationship of 5, 0≤z≤5, and 20≤w≤35, and the balance is x. 13. The thin film laminate according to claim 11, wherein a representing the composition ratio is a = 0, and z is z = 0. 14. The element M may be Zr and / or H
14. The thin film laminate according to claim 11, which is f. 15. The specific resistance of the magnetic layer is 300 to 15
The thin film laminate according to any one of claims 11 to 14, wherein the thickness is 00 µΩ · cm. 16. The magnetic layer has a composition formula (Co)
Indicated by _{1-c T c) x M} y X z O w, element T, Fe, an element that includes one or both either of Ni, the element M, Ti, Zr, Hf, V , Nb , Ta, Cr, M
one or more elements selected from the group consisting of o, Si, P, C, W, B, Al, Ga, Ge and rare earth elements;
Are Au, Ag, Cu, Ru, Rh, Os, Ir, P
One or more elements selected from t and Pd. The composition ratio is such that c is 0 ≦ c ≦ 0.7, x, y, z, w
Is atomic%, 3 ≦ y ≦ 30, 0 ≦ z ≦ 20, 7 ≦ w ≦ 4
0, 20 ≦ y + z + w ≦ 60, and the remainder is x
Wherein the microcrystalline phase of the magnetic layer further comprises:
The thin film laminate according to any one of claims 7 to 10, comprising an oxide of the element M. 17. The magnetic layer according to claim 1, wherein c represents 0 ≦ 0.
c ≦ 0.3, x, y, z and w are atomic%, and 7 ≦ y ≦ 1
5, 20 ≦ w ≦ 35, 0 ≦ z ≦ 19, 30 ≦ x + y + z
The thin film laminate according to claim 16, wherein a relationship of ≤50 is satisfied, and the balance is x. 18. The thin film laminate according to claim 16, wherein the element T is Fe, and the concentration ratio between Co and Fe is 0.3 ≦ {Co / (Co + Fe)} ≦ 0.8. 19. An element constituting the magnetic layer,
19. The thin film laminate according to claim 16, wherein N is used instead of O, or N is used together with O. 20. The specific resistance of the magnetic layer is 1000 to 3
The thin film laminate according to any one of claims 16 to 19, wherein the thickness is 500 µΩ · cm. 21. A thin-film magnetic head comprising at least a lower core layer, an upper core layer facing the lower core layer via a magnetic gap at a portion facing a recording medium, and a coil for applying a magnetic field to both core layers. An insulating layer laminated on a substrate, a barrier layer laminated on the insulating layer, and the lower core layer laminated on the barrier layer, and / or the lower core layer 3. An insulating layer covering the coil laminated on the insulating layer, a barrier layer laminated on the insulating layer, and the upper core layer laminated on the barrier layer. Item 21. A thin-film magnetic head formed of the thin-film laminate according to any one of items 20 to 20. 22. A thin-film transformer having a first magnetic layer, a second magnetic layer, and a primary coil and a secondary coil between the first magnetic layer and the second magnetic layer, which are laminated on a substrate. Insulating layer, a barrier layer laminated on the insulating layer, and the first magnetic layer 3 laminated on the barrier layer.
An insulating layer covering the primary coil and the secondary coil laminated on the layer and / or the first magnetic layer; a barrier layer laminated on the insulating layer; 21. A thin-film transformer, wherein three layers of the second magnetic layer laminated on the thin film are formed by the thin-film laminate according to any one of claims 1 to 20. 23. A thin-film inductor having a first magnetic layer, a second magnetic layer, and a coil between the first magnetic layer and the second magnetic layer, the insulating layer laminated on a substrate, A barrier layer laminated on an insulating layer, three layers of the first magnetic layer laminated on the barrier layer, and / or
Alternatively, an insulating layer covering the coil stacked on the first magnetic layer, a barrier layer stacked on the insulating layer, and the second magnetic layer stacked on the barrier layer
A thin-film inductor, wherein the layer is formed by the thin-film laminate according to any one of claims 1 to 20. 24. A method of manufacturing a thin film laminate comprising a step of laminating an insulating layer on a substrate and a step of laminating a magnetic layer on the insulating layer, wherein the method comprises the steps of: A step of forming one or more barrier layers selected from an Al-based oxide, a Si-based nitride, Si, and a Si-based oxide; and a step of laminating the magnetic layer on the barrier layer. And a method for producing a thin film laminate. 25. The thin film stack according to claim 24, further comprising a step of subjecting the insulating layer to dehydrobaking in a vacuum after forming the insulating layer, wherein the magnetic layer is formed on the insulating layer. How to make the body. 26. The method according to claim 24, further comprising, after forming the insulating layer, performing a surface treatment on the insulating layer by sputter etching or ion milling, and forming the magnetic layer on the insulating layer. 3. The method for producing a thin film laminate according to item 1. 27. The method according to claim 24, wherein the insulating layer is formed of a polyimide-based or novolak-based resin. 28. The thickness of the barrier layer is 0.05 μm
28. The film is formed within a range of 1.0 to 1.0 .mu.m.
The method for producing a thin film laminate according to any one of the above. 29. The barrier layer has a thickness of 0.2 μm to
29. The method for manufacturing a thin film laminate according to claim 24, wherein the thin film is formed within a range of 1.0 μm. 30. The barrier layer is formed of Si and / or a Si-based oxide, and the magnetic layer is formed of an element T mainly composed of Co as a main component and Ti, Zr, Hf, V, Nb, T
a, Cr, Mo, Si, P, C, W, B, Al, Ga,
One or two or more elements M selected from Ge and rare earth elements and O are mainly contained, and the film structure mainly includes an amorphous phase containing a large amount of the elements M and O, and an element T. 25. The microcrystalline phase of the magnetic layer is formed of a soft magnetic film containing an oxide of the element M.
30. The method for producing a thin film laminate according to any one of the above items. 31. As one element constituting the magnetic layer,
31. The method according to claim 30, wherein N is used instead of O, or N is used together with O. 32. The specific resistance of the magnetic layer is 1000 to 3
The method for producing a thin film laminate according to claim 30 or 31, wherein the thickness is 500 µΩ · cm. 33. The barrier layer is formed of an Al-based oxide and / or a Si-based nitride, and the magnetic layer is formed of an element T mainly containing Fe as a main component and Zr, Hf, V, Nb,
Ta, Cr, Mo, Si, P, C, W, B, Al, G
a, Ge and one or two or more elements M selected from rare earth elements and O are mainly contained, and the film structure includes an amorphous phase containing a large amount of the elements M and O; 25. A soft magnetic film in which a microcrystalline phase mainly composed of is mixed.
30. The method for producing a thin film laminate according to any one of the above items. 34. The specific resistance of the magnetic layer is 300 to 15
The method for producing a thin film laminate according to claim 33, wherein the thickness is 00 µΩ · cm.