JP2000113792A - Electrostatic micro relay - Google Patents
Electrostatic micro relayInfo
- Publication number
- JP2000113792A JP2000113792A JP10286602A JP28660298A JP2000113792A JP 2000113792 A JP2000113792 A JP 2000113792A JP 10286602 A JP10286602 A JP 10286602A JP 28660298 A JP28660298 A JP 28660298A JP 2000113792 A JP2000113792 A JP 2000113792A
- Authority
- JP
- Japan
- Prior art keywords
- fixed
- substrate
- movable
- electrode
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Landscapes
- Micromachines (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、静電引力により駆
動して接点を開閉する静電マイクロリレーに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic micro relay which opens and closes contacts by being driven by electrostatic attraction.
【0002】[0002]
【従来の技術】従来、静電マイクロリレーとして図8に
示すものがある。この静電マイクロリレーは、大略、固
定基板201と可動基板202とから構成されている。
固定基板201には、絶縁膜203を介して固定電極2
04及び2本の信号線205が形成されている。信号線
205は所定間隔で設けられ、その近接する端部は固定
接点206となっている。可動基板202は、固定基板
201に設けたアンカ207によって弾性的に片持ち支
持されている。可動基板202には、前記固定電極20
4及び固定接点206に対応する位置に可動電極208
及び可動接点209がそれぞれ形成されている。2. Description of the Related Art FIG. 8 shows a conventional electrostatic micro relay. This electrostatic micro relay generally includes a fixed substrate 201 and a movable substrate 202.
The fixed substrate 201 has a fixed electrode 2
04 and two signal lines 205 are formed. The signal lines 205 are provided at predetermined intervals, and the adjacent ends thereof are fixed contacts 206. The movable substrate 202 is elastically cantilevered by an anchor 207 provided on the fixed substrate 201. The movable substrate 202 has the fixed electrode 20
4 and a movable electrode 208 at a position corresponding to the fixed contact 206.
And a movable contact 209 are formed.
【0003】この静電マイクロリレーでは、固定電極2
04と可動電極208の間に電圧を印加して静電引力を
発生させ、可動基板202を固定基板201側に吸引す
ることにより、可動接点209を両固定接点206に閉
成し、2本の信号線205を電気的に接続するようにな
っている。そして、電圧を除去して静電引力を消失させ
ることにより、可動電極208を弾性力により元の形状
に復帰させて固定基板201から離間させ、信号線20
5を電気的に遮断するようになっている。In this electrostatic micro relay, the fixed electrode 2
The movable contact 209 is closed to both fixed contacts 206 by applying a voltage between the fixed contact 204 and the movable electrode 208 to generate an electrostatic attraction and attracting the movable substrate 202 toward the fixed substrate 201. The signal line 205 is electrically connected. Then, by removing the voltage and eliminating the electrostatic attractive force, the movable electrode 208 is returned to the original shape by the elastic force, separated from the fixed substrate 201, and
5 is electrically disconnected.
【0004】ところで、前記静電マイクロリレーでは、
マイクロストリップ構造を用いることにより、固定基板
201を高周波GND(グラウンド)基板として使用し
ている。この場合、固定基板201にSi、GaAs等
の半導体を使用し、その表面に絶縁膜203(数μm
厚)を形成し、さらにその表面に信号線205を配置す
ることにより、信号線幅の増大を防止するようにしてい
る。[0004] By the way, in the electrostatic micro relay,
By using the microstrip structure, the fixed substrate 201 is used as a high-frequency GND (ground) substrate. In this case, a semiconductor such as Si or GaAs is used for the fixed substrate 201, and an insulating film 203 (several μm
(Thickness), and furthermore, the signal line 205 is disposed on the surface thereof, thereby preventing the signal line width from increasing.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、前記静
電マイクロリレーでは、固定基板201には、高周波特
性を向上させるため、半導体基板ではなく、信号線20
5間の容量結合が無視できるガラス基板等の絶縁基板を
用いる必要がある。この場合、特性インピーダンスは、
図9のグラフに示すように、信号線幅Wと基板の厚みh
の影響を受けるが、前記基板が通常500μm程度の厚
みhを有しているため、一般的な50Ω、75Ωの特性
インピーダンスを前記マイクロストリップ構造で実現し
ようとすると、信号線幅が1000μm前後となり、大
型化を招くという問題がある。However, in the electrostatic micro relay, the fixed substrate 201 is not a semiconductor substrate but a signal line 20 in order to improve high-frequency characteristics.
It is necessary to use an insulating substrate such as a glass substrate that can neglect the capacitive coupling between the five. In this case, the characteristic impedance is
As shown in the graph of FIG. 9, the signal line width W and the substrate thickness h
However, since the substrate usually has a thickness h of about 500 μm, when trying to realize a general characteristic impedance of 50Ω and 75Ω in the microstrip structure, the signal line width becomes about 1000 μm, There is a problem that the size is increased.
【0006】そこで、本発明は、小型で優れた高周波特
性を有する静電マイクロリレーを提供することを課題と
する。Accordingly, an object of the present invention is to provide an electrostatic micro relay having a small size and excellent high frequency characteristics.
【0007】[0007]
【課題を解決するための手段】本発明は、前記課題を解
決するための手段として、固定基板の固定電極と、固定
基板に弾性支持部を介して支持した可動基板の可動電極
との間に発生させる静電引力に基いて可動基板を駆動
し、固定基板に形成した少なくとも2つの信号線にそれ
ぞれ設けた固定接点に、前記可動基板に絶縁膜を介して
形成した可動接点を接離することにより、前記信号線を
電気的に開閉するようにした静電マイクロリレーにおい
て、前記固定電極を、信号線の両側に等距離で設けると
共に、高周波GND電極と共用したものである。According to the present invention, as a means for solving the above-mentioned problem, a fixed electrode of a fixed substrate and a movable electrode of a movable substrate supported on the fixed substrate via an elastic supporting portion are provided. The movable substrate is driven based on the generated electrostatic attraction, and the movable contact formed on the movable substrate via an insulating film is brought into contact with and separated from fixed contacts provided on at least two signal lines formed on the fixed substrate. Thus, in the electrostatic micro relay in which the signal line is electrically opened and closed, the fixed electrode is provided at an equal distance on both sides of the signal line and is shared with the high-frequency GND electrode.
【0008】この構成により、特性インピーダンスを、
信号線幅と、信号線と同一平面状に配置された固定電極
(GND電極)のギャップとの比率、及び、固定基板の
誘電率により決定することが可能となる。これにより、
特性インピーダンスが固定基板の厚みに影響されること
がなくなり、固定基板にガラス等の絶縁体基板を使用し
て高周波特性を高めても、その厚み及び信号線の幅寸法
を抑制できる。また、電極間に印加する信号の周波数
は、開閉信号と駆動信号とで大きく離れているため、信
号同士は互いに干渉することはない。With this configuration, the characteristic impedance is
It can be determined by the ratio of the signal line width to the gap of the fixed electrode (GND electrode) arranged on the same plane as the signal line, and the dielectric constant of the fixed substrate. This allows
The characteristic impedance is no longer affected by the thickness of the fixed substrate, and the thickness and the width of the signal line can be suppressed even if the high-frequency characteristics are increased by using an insulating substrate such as glass for the fixed substrate. Further, since the frequency of the signal applied between the electrodes is largely different between the open / close signal and the drive signal, the signals do not interfere with each other.
【0009】前記可動基板の少なくとも信号線に対向す
る部分を除去すると、信号線と可動基板との間の容量結
合が抑制できると共に、可動電極の信号線への吸引を防
止できる点で好ましい。It is preferable to remove at least a portion of the movable substrate opposed to the signal line, since the capacitive coupling between the signal line and the movable substrate can be suppressed and the movable electrode can be prevented from being attracted to the signal line.
【0010】前記固定電極を、前記固定基板の固定接点
の間で電気的に接続すると、さらに信号線と可動基板と
の間の容量結合が抑制できる点で好ましい。It is preferable that the fixed electrode is electrically connected between the fixed contacts of the fixed substrate, since capacitive coupling between the signal line and the movable substrate can be further suppressed.
【0011】前記固定基板をガラスで構成する一方、前
記可動基板を単結晶シリコンで構成すると、全てを半導
体プロセス工程で処理できる点で好ましい。It is preferable that the fixed substrate is made of glass while the movable substrate is made of single-crystal silicon, since all the substrates can be processed in a semiconductor process.
【0012】前記信号線の幅と、信号線及び固定電極の
距離との比を、0.04〜2.00とすると、所定の特
性インピーダンスを有する構造とすることが可能とな
る。When the ratio of the width of the signal line to the distance between the signal line and the fixed electrode is 0.04 to 2.00, a structure having a predetermined characteristic impedance can be obtained.
【0013】前記可動基板に第二の弾性支持部を形成
し、該弾性支持部に絶縁膜を介して可動接点を形成する
のが好ましい。It is preferable that a second elastic support is formed on the movable substrate, and a movable contact is formed on the elastic support via an insulating film.
【0014】この構成により、対向する固定電極と可動
電極との間に電圧を印加すると、静電引力により第1弾
性支持部が撓んで可動電極が固定電極に接近し、可動接
点が固定接点に接触する。このとき、可動電極と固定電
極との間の距離は初期状態より狭くなっているため一層
大きな静電引力で吸引され、第2弾性支持部が撓んで、
可動電極が固定電極に吸着される。第2弾性支持部は第
1弾性支持部よりも弾性力が大きいので、可動接点が固
定接点に大きな荷重で圧接する。According to this configuration, when a voltage is applied between the fixed electrode and the movable electrode facing each other, the first elastic support portion is bent by the electrostatic attraction, the movable electrode approaches the fixed electrode, and the movable contact contacts the fixed contact. Contact. At this time, since the distance between the movable electrode and the fixed electrode is smaller than the initial state, the distance between the movable electrode and the fixed electrode is smaller than that of the initial state.
The movable electrode is attracted to the fixed electrode. Since the second elastic support portion has a higher elastic force than the first elastic support portion, the movable contact is pressed against the fixed contact with a large load.
【0015】[0015]
【発明の実施の形態】以下、本発明に係る実施形態を添
付図面に従って説明する。Embodiments of the present invention will be described below with reference to the accompanying drawings.
【0016】図1は、本実施形態に係る静電マイクロリ
レーを示す。この静電マイクロリレーは、固定基板10
の上面に可動基板20を一体化した構成である。FIG. 1 shows an electrostatic micro relay according to the present embodiment. This electrostatic micro relay is mounted on the fixed substrate 10.
Is a configuration in which the movable substrate 20 is integrated with the upper surface of the substrate.
【0017】前記固定基板10は、ガラス基板10aの
上面に、固定電極12と、2本の信号線13,14とを
それぞれ設けたものである。The fixed substrate 10 is provided with a fixed electrode 12 and two signal lines 13 and 14 on the upper surface of a glass substrate 10a.
【0018】前記固定電極12の表面は絶縁膜16で被
覆され、配線12a1,12a2,12a3,12a4
を介して接続パッド12b1,12b2,12b3,1
2b4にそれぞれ接続されている。The surface of the fixed electrode 12 is covered with an insulating film 16 and wirings 12a1, 12a2, 12a3, 12a4
Through the connection pads 12b1, 12b2, 12b3, 1
2b4.
【0019】前記信号線13,14は、同一直線上に配
置されている。各信号線13,14の一端部は所定間隔
で設けられる固定接点13a,14aとなっている。一
方、各信号線13,14の他端部は接続パッド13b,
14bに接続されている。The signal lines 13 and 14 are arranged on the same straight line. One ends of the signal lines 13 and 14 are fixed contacts 13a and 14a provided at predetermined intervals. On the other hand, the other end of each of the signal lines 13 and 14 is connected to a connection pad 13b,
14b.
【0020】前記固定電極12は、信号線13,14の
両側に同一距離を有して形成されると共に、高周波GN
D電極と兼用されることにより、コプレナ構造を構成し
ている。また、信号線13,14の両側に位置する固定
電極12同士は、固定接点13a,14aの間で互いに
接続されている。これにより、開閉信号の発生する電気
力線は、固定接点13a,14a間の高周波GND電極
で終端されるので、アイソレーション特性が向上する。
ここで、アイソレーション特性とは、接点開放時、信号
線間における信号の漏れがどの程度存在するのかを示す
ものであり、アイソレーション特性が向上するとは、信
号の漏れが低減されることを意味する。なお、前記固定
電極12は、信号線13,14よりも低い位置に形成さ
れている。The fixed electrode 12 is formed on both sides of the signal lines 13 and 14 at the same distance and has a high frequency GN
A coplanar structure is formed by being also used as the D electrode. The fixed electrodes 12 located on both sides of the signal lines 13 and 14 are connected to each other between the fixed contacts 13a and 14a. As a result, the lines of electric force that generate the switching signal are terminated at the high-frequency GND electrode between the fixed contacts 13a and 14a, so that the isolation characteristics are improved.
Here, the isolation characteristics indicate how much signal leakage exists between signal lines when the contacts are opened, and improving the isolation characteristics means that signal leakage is reduced. I do. The fixed electrode 12 is formed at a position lower than the signal lines 13 and 14.
【0021】前記構成の固定基板10では、特性インピ
ーダンスが、図3に示すように、信号線幅Wと、信号線
13,14と同一平面状に配置された固定電極12(G
ND電極)のギャップSとの比率(W/S)、及び、固
定基板10の誘電率εrで決定され、固定基板10の厚
さに影響されることはない。また、固定電極10をGN
D電極と共用しているので、その占有面積を小さく抑え
ることができる。したがって、固定基板10をコンパク
トに形成することが可能となる。なお、電極に印加され
る信号(開閉信号と駆動信号)の周波数は大きく離れて
いるため(高周波リレーの場合、開閉信号は100MH
z〜5GHz程度、駆動信号はDC〜数10Hz)、固
定電極10をGND電極と共用しても信号間の干渉は問
題とはならない。ここで、開閉信号とは信号線13,1
4を伝送される信号を意味し、駆動信号とは固定電極1
2と可動電極23との間に発生する信号を意味する。In the fixed substrate 10 having the above-described structure, as shown in FIG. 3, the characteristic impedance has the signal line width W and the fixed electrodes 12 (G) arranged on the same plane as the signal lines 13 and 14.
It is determined by the ratio (W / S) to the gap S of the ND electrode) and the dielectric constant εr of the fixed substrate 10, and is not affected by the thickness of the fixed substrate 10. Further, the fixed electrode 10 is GN
Since it is shared with the D electrode, its occupied area can be reduced. Therefore, the fixed substrate 10 can be formed compact. Note that the frequency of the signal (opening / closing signal and drive signal) applied to the electrodes is far apart (in the case of a high-frequency relay, the opening / closing signal is 100 MHz).
Even if the fixed electrode 10 is shared with a GND electrode, interference between signals does not cause a problem. Here, the open / close signal is the signal line 13, 1
4 means a signal transmitted, and the driving signal is a fixed electrode 1
2 and a signal generated between the movable electrode 23.
【0022】前記可動基板20は、略矩形板状のシリコ
ン基板を、アンカ21a,21bにより、第1弾性支持
部22を介して可動電極23を弾性支持し、その中央部
に第2弾性支持部24を介して可動接点部25を弾性支
持する構成としたものである。The movable substrate 20 elastically supports a substantially rectangular plate-like silicon substrate with anchors 21a and 21b via a first elastic support portion 22 to a movable electrode 23, and a second elastic support portion at the center thereof. In this configuration, the movable contact portion 25 is elastically supported via 24.
【0023】前記アンカ21a,21bは、固定基板1
0の上面2箇所にそれぞれ立設され、一方のアンカ21
bは固定基板10の上面に設けた配線15aを介して接
続パッド15bに電気接続されている。The anchors 21a and 21b are fixed to the fixed substrate 1.
0, and one anchor 21
b is electrically connected to a connection pad 15b via a wiring 15a provided on the upper surface of the fixed substrate 10.
【0024】前記第1弾性支持部22は、可動基板20
の両側縁部に沿って設けたスリット22aにより形成さ
れ、端部下面に前記各アンカ21a,21bが一体化さ
れている。The first elastic support portion 22 includes a movable substrate 20
Are formed by slits 22a provided along both side edges, and the anchors 21a and 21b are integrated with the lower surface of the end.
【0025】前記可動電極23は、前記固定電極12に
対向し、両電極12,23間に電圧を印加することによ
り発生する静電引力によって固定電極12に吸引される
ようになっている。また、可動電極23は、少なくとも
信号線13,14に対向する部分が除去されている。し
たがって、可動電極23を介した信号線13,14間の
容量結合が存在しないため、アイソレーション特性が向
上する。The movable electrode 23 faces the fixed electrode 12 and is attracted to the fixed electrode 12 by an electrostatic attraction generated by applying a voltage between the electrodes 12 and 23. The movable electrode 23 has at least a portion facing the signal lines 13 and 14 removed. Therefore, since there is no capacitive coupling between the signal lines 13 and 14 via the movable electrode 23, the isolation characteristics are improved.
【0026】前記第2弾性支持部24及び可動接点部2
5は、可動基板20の両端縁部中央から中央部に向かっ
て設けた切欠部26により形成される。第2弾性支持部
24は、可動電極23と可動接点部25とを連結する幅
狭の梁であり、接点閉成時、前記第1弾性支持部22よ
りも大きな弾性力を得られるように構成されている。可
動接点部25は、第2弾性支持部24に支持される平坦
部25aの下面に絶縁膜27を介して可動接点28を設
けたものである。可動接点28は、前記各固定接点13
a,14aに対向し、両固定接点13a,14aと閉成
することにより、信号線13,14を電気的に接続する
ようになっている。The second elastic support portion 24 and the movable contact portion 2
5 is formed by a notch 26 provided from the center of both ends of the movable substrate 20 toward the center. The second elastic support portion 24 is a narrow beam that connects the movable electrode 23 and the movable contact portion 25, and is configured to obtain a larger elastic force than the first elastic support portion 22 when the contact is closed. Have been. The movable contact portion 25 has a movable contact 28 provided on the lower surface of a flat portion 25 a supported by the second elastic support portion 24 via an insulating film 27. The movable contact 28 is connected to each of the fixed contacts 13.
The signal lines 13 and 14 are electrically connected to each other by closing both the fixed contacts 13a and 14a opposite to the fixed contacts 13a and 14a.
【0027】続いて、前記構成からなる静電マイクロリ
レーの製造方法を図4ないし図6を参照して説明する。Next, a method of manufacturing the electrostatic micro relay having the above configuration will be described with reference to FIGS.
【0028】まず、図4(a)に示すパイレックス等の
ガラス基板10aに、図4(b)に示すように、固定電
極12、固定接点13a,14a、信号線13,14、
配線12a1,12a2,12a3,12a4,15
a、及び、接続パッド13b,14b,12b1,12
b2,12b3,12b4,15bをそれぞれ形成する
(配線12a1,12a2,12a3,12a4,15
a、接続パッド12b1,12b2,12b3,12b
4,15bは図示せず。)。そして、図4(c)に示す
ように、前記固定電極12の表面を絶縁膜16で被覆す
ることにより、固定基板10を完成する。First, as shown in FIG. 4B, a fixed electrode 12, fixed contacts 13a and 14a, signal lines 13 and 14, a glass substrate 10a such as Pyrex shown in FIG.
Wirings 12a1, 12a2, 12a3, 12a4, 15
a and connection pads 13b, 14b, 12b1, 12
b2, 12b3, 12b4, 15b are formed respectively (wirings 12a1, 12a2, 12a3, 12a4, 15a
a, connection pads 12b1, 12b2, 12b3, 12b
4, 15b are not shown. ). Then, as shown in FIG. 4C, the surface of the fixed electrode 12 is covered with an insulating film 16 to complete the fixed substrate 10.
【0029】一方、図5(a)に示すように、Si層1
01、SiO2層(酸化膜)102及びSi層103か
らなるSOIウエハ100の下面(Si層103)に、
接点間ギャップを形成するため、例えば、シリコン酸化
膜をマスクとするTMAHによるウエットエッチングを
行い、図5(b)に示すように、下方側に突出するアン
カ21a,21bを形成する。そして、ウエットエッチ
ングにより除去された部分の中央部に、図5(c)に示
すように、絶縁膜27を介して可動接点28を形成す
る。On the other hand, as shown in FIG.
01, on the lower surface (Si layer 103) of the SOI wafer 100 including the SiO 2 layer (oxide film) 102 and the Si layer 103,
In order to form a contact gap, for example, wet etching is performed by TMAH using a silicon oxide film as a mask to form anchors 21a and 21b projecting downward as shown in FIG. 5B. Then, as shown in FIG. 5C, a movable contact 28 is formed via the insulating film 27 at the center of the portion removed by the wet etching.
【0030】そして、図6(a)に示すように、前記固
定基板10のガラス基板10aに前記SOIウエハ10
0のアンカ21a,21bを陽極接合で接合一体化す
る。そして、SOIウエハ100に上面TMAH、KO
H等のアルカリエッチング液で酸化膜102までエッチ
ングして薄くする。さらに、フッ素系エッチング液で前
記酸化膜102を除去して可動電極23となるSi層1
03を露出させる。そして、RIE等を用いたドライエ
ッチングで型抜きエッチングを行い、スリット22a及
び切欠部26を設けて弾性支持部22、第2弾性支持部
24、可動接点部25を形成し、可動基板20の完成と
同時に静電マイクロリレーを完成する。Then, as shown in FIG. 6A, the SOI wafer 10 is placed on a glass substrate 10a of the fixed substrate 10.
The zero anchors 21a and 21b are joined and integrated by anodic bonding. Then, the upper surface TMAH, KO
The oxide film 102 is etched down to a thinner thickness with an alkaline etchant such as H. Further, the Si film 1 serving as the movable electrode 23 by removing the oxide film 102 with a fluorine-based etchant
03 is exposed. Then, die cutting etching is performed by dry etching using RIE or the like, and a slit 22a and a notch 26 are provided to form the elastic support portion 22, the second elastic support portion 24, and the movable contact portion 25. At the same time, the electrostatic micro relay is completed.
【0031】次に、前記構成からなる静電マイクロリレ
ーの動作を図7を参照して説明する。Next, the operation of the electrostatic micro relay having the above configuration will be described with reference to FIG.
【0032】固定電極12と可動電極23との間に電圧
を印加していない初期状態では、図7(a)に示すよう
に、固定基板10と可動基板20とは平行を保持し、可
動接点28が固定接点13a,14aから開離してい
る。In the initial state where no voltage is applied between the fixed electrode 12 and the movable electrode 23, as shown in FIG. 7A, the fixed substrate 10 and the movable 28 is separated from the fixed contacts 13a and 14a.
【0033】そして、可動電極23と固定電極12との
間に電圧を印加すると、両電極12,23間には静電引
力が発生する。この結果、図7(b)に示すように、可
動基板20が第1弾性支持部22の弾性力に抗して固定
基板10に接近し、可動接点28が固定接点13a,1
4aに当接する。When a voltage is applied between the movable electrode 23 and the fixed electrode 12, an electrostatic attraction is generated between the electrodes 12 and 23. As a result, as shown in FIG. 7B, the movable substrate 20 approaches the fixed substrate 10 against the elastic force of the first elastic support portion 22, and the movable contact 28 moves to the fixed contacts 13a, 13a.
4a.
【0034】可動基板20は、図7(c)に示すよう
に、可動接点28が固定接点13a,14aに当接した
後も、可動電極23が固定電極12に当接するまで移動
を続ける。このため、可動接点28が固定接点13a,
14aに対して第2弾性支持部24の撓み量に応じた弾
性力を作用させて接触圧を高め、片当たりを発生させな
い。したがって、接点閉成時、所望の接触信頼性が得ら
れる。As shown in FIG. 7 (c), even after the movable contact 28 contacts the fixed contacts 13a and 14a, the movable substrate 20 continues to move until the movable electrode 23 contacts the fixed electrode 12. For this reason, the movable contact 28 is fixed contact 13a,
The contact pressure is increased by applying an elastic force corresponding to the amount of deflection of the second elastic support portion 24 to the first elastic support portion 24, so that no one-side contact occurs. Therefore, when the contacts are closed, desired contact reliability can be obtained.
【0035】このとき、第1、第2弾性支持部22,2
4が可動電極23をそれぞれ上方に引張る力、絶縁膜1
6を介した可動電極23と固定電極12との間の静電引
力、絶縁膜16の表面からの抗力をそれぞれFs1,Fs2, F
e, Fnとすると下記の関係があり、第1、第2弾性支持
部22,24のバネ係数、可動電極23と固定電極12
との初期ギャップ、接点の厚み等を設計することにより
Fn 、Fs1を小さくし、Fs2 、すなわち接触荷重の(理想モデ
ルからの)低下を抑えることが可能である。At this time, the first and second elastic support portions 22 and 2
4 is a force for pulling the movable electrode 23 upward, and the insulating film 1
6, the electrostatic attraction between the movable electrode 23 and the fixed electrode 12 and the drag from the surface of the insulating film 16 are represented by F s1 , F s2 , F
e, there is the following relationship when the F n, first, spring constant of the second elastic support portions 22 and 24, the movable electrode 23 fixed electrode 12
By designing the initial gap, the thickness of the contact, etc.
It is possible to make F n and F s1 small and to suppress a decrease in F s2 , that is, a decrease in the contact load (from the ideal model).
【0036】[0036]
【数1】 (Equation 1)
【0037】そして、印加電圧を除去すると、第1弾性
支持部22及び第2弾性支持部24の両方の弾性力によ
り、可動基板20は固定基板10から離間する。このた
め、この離間動作が確実に行われる。その後、第1弾性
支持部22のみの弾性力により可動基板20は上動を続
け、可動接点28が固定接点13a,14aから開離し
て初期状態に復帰する。When the applied voltage is removed, the movable substrate 20 is separated from the fixed substrate 10 by the elastic force of both the first elastic support 22 and the second elastic support 24. For this reason, this separating operation is reliably performed. Thereafter, the movable substrate 20 continues to move upward by the elastic force of only the first elastic support portion 22, the movable contact 28 is separated from the fixed contacts 13a and 14a, and returns to the initial state.
【0038】[0038]
【発明の効果】以上の説明から明らかなように、本発明
に係る静電マイクロリレーによれば、固定電極を、信号
線の両側に等距離で設けると共に、高周波GND電極と
共用しているので、固定基板に絶縁材料を使用して良好
な高周波特性を得ると共に、コンパクトに形成すること
が可能となる。As is clear from the above description, according to the electrostatic microrelay of the present invention, the fixed electrodes are provided at equal distances on both sides of the signal line and are shared with the high-frequency GND electrode. By using an insulating material for the fixed substrate, good high-frequency characteristics can be obtained, and the fixed substrate can be formed compactly.
【0039】また、可動基板の少なくとも信号線に対向
する部分を除去したので、信号線間の可動基板を介して
の容量結合を抑えることができ、アイソレーション特性
を向上させることが可能となる。しかも、信号線に印加
される電圧により発生する静電引力によって可動基板が
固定基板に接近することを防止できるため、2次耐圧を
向上させることも可能となる。Further, since at least a portion of the movable substrate facing the signal line is removed, capacitive coupling between the signal lines via the movable substrate can be suppressed, and the isolation characteristics can be improved. In addition, since the movable substrate can be prevented from approaching the fixed substrate due to the electrostatic attraction generated by the voltage applied to the signal line, the secondary withstand voltage can be improved.
【0040】また、固定電極を、固定基板の固定接点の
間で電気的に接続したので、より一層アイソレーション
特性を向上させることが可能となる。Further, since the fixed electrode is electrically connected between the fixed contacts of the fixed substrate, the isolation characteristics can be further improved.
【0041】また、固定基板をガラスで構成する一方、
可動基板を単結晶シリコンで構成したので、全てを半導
体プロセス工程で処理でき、寸法精度のバラツキを抑制
することができる。また、単結晶シリコンは耐疲労性、
耐クリープ性が高いため、寿命特性を向上させることが
可能となる。しかも、固定基板をガラス基板単体で製造
してあるので、単結晶シリコン基板からなる可動基板を
陽極接合で一体化でき、組付け作業を簡単にすることが
可能となる。そして、固定基板上の固定電極、固定接
点、配線、接続パッド間の容量を低く抑えることができ
るため、高周波特性を向上させることが可能となる。Further, while the fixed substrate is made of glass,
Since the movable substrate is made of single-crystal silicon, all can be processed in the semiconductor process, and variations in dimensional accuracy can be suppressed. In addition, single crystal silicon has fatigue resistance,
Since the creep resistance is high, the life characteristics can be improved. Moreover, since the fixed substrate is manufactured as a single glass substrate, the movable substrate made of a single-crystal silicon substrate can be integrated by anodic bonding, and the assembling work can be simplified. In addition, since the capacitance between the fixed electrode, the fixed contact, the wiring, and the connection pad on the fixed substrate can be reduced, the high-frequency characteristics can be improved.
【0042】また、信号線の幅と、信号線及び固定電極
の距離との比を、0.04〜2.00としたので、一般的
に使用される50Ω、75Ωの特性インピーダンスを固
定電極以外のGND電極を形成することなく実現でき
る。Further, since the ratio of the width of the signal line to the distance between the signal line and the fixed electrode is set to 0.04 to 2.00, the characteristic impedance of 50Ω and 75Ω generally used is changed to other than the fixed electrode. Can be realized without forming the GND electrode.
【0043】また、可動基板に第二の弾性支持部を形成
し、該弾性支持部に絶縁膜を介して可動接点を形成した
ので、接触荷重の減少を押さえて良好な接触信頼性を得
ることができる。Further, since the second elastic support portion is formed on the movable substrate and the movable contact is formed on the elastic support portion via the insulating film, it is possible to suppress a decrease in the contact load and obtain good contact reliability. Can be.
【図1】 本実施形態に係る静電マイクロリレーの斜視
図である。FIG. 1 is a perspective view of an electrostatic micro relay according to an embodiment.
【図2】 図1の平面図である。FIG. 2 is a plan view of FIG.
【図3】 図1の静電マイクロリレーの特性インピーダ
ンスを示すグラフである。FIG. 3 is a graph showing a characteristic impedance of the electrostatic micro relay of FIG. 1;
【図4】 図1の固定基板の加工工程を示す断面図であ
る。FIG. 4 is a cross-sectional view showing a processing step of the fixed substrate of FIG.
【図5】 図1の可動基板側の加工工程を示す断面図で
ある。FIG. 5 is a cross-sectional view showing a processing step on the movable substrate side of FIG. 1;
【図6】 図1の静電マイクロリレーの加工工程を示す
断面図である。FIG. 6 is a sectional view showing a processing step of the electrostatic micro relay of FIG. 1;
【図7】 図1の静電マイクロリレーの動作状態を示す
模式図である。FIG. 7 is a schematic diagram showing an operation state of the electrostatic micro relay of FIG. 1;
【図8】 従来例に係る静電マイクロリレーの斜視図で
ある。FIG. 8 is a perspective view of an electrostatic micro relay according to a conventional example.
【図9】 図8の静電マイクロリレーの特性インピーダ
ンスを示すグラフである。FIG. 9 is a graph showing characteristic impedance of the electrostatic micro relay of FIG. 8;
10…固定基板 12…固定電極 12a1、12a2、12a3、12a4…配線 12b1、12b2、12b3、12b4…接続パッド 13、14…信号線 13a、14a…固定接点 13b、14b…接続パッド 15a…配線 15b…接続パッド 20…可動基板 21a,21b…アンカ 22…第1弾性支持部 23…可動電極 24…第2弾性支持部 28…可動接点 DESCRIPTION OF SYMBOLS 10 ... Fixed substrate 12 ... Fixed electrode 12a1, 12a2, 12a3, 12a4 ... Wiring 12b1, 12b2, 12b3, 12b4 ... Connection pad 13, 14 ... Signal line 13a, 14a ... Fixed contact 13b, 14b ... Connection pad 15a ... Wiring 15b ... Connection pad 20: movable substrate 21a, 21b: anchor 22: first elastic support 23: movable electrode 24: second elastic support 28: movable contact
Claims (6)
支持部を介して支持した可動基板の可動電極との間に発
生させる静電引力に基いて可動基板を駆動し、固定基板
に形成した少なくとも2つの信号線にそれぞれ設けた固
定接点に、前記可動基板に絶縁膜を介して形成した可動
接点を接離することにより、前記信号線を電気的に開閉
するようにした静電マイクロリレーにおいて、 前記固定電極を、信号線の両側に等距離で設けると共
に、高周波GND電極と共用したことを特徴とする静電
マイクロリレー。A movable substrate is formed on a fixed substrate by driving the movable substrate based on an electrostatic attraction generated between a fixed electrode of the fixed substrate and a movable electrode of the movable substrate supported on the fixed substrate via an elastic supporting portion. An electrostatic micro relay that electrically opens and closes the signal line by moving a movable contact formed on the movable substrate via an insulating film to and away from a fixed contact provided on each of the at least two signal lines. 3. The electrostatic microrelay according to claim 1, wherein the fixed electrodes are provided at equal distances on both sides of the signal line and are shared with a high-frequency GND electrode.
する部分を除去したことを特徴とする請求項1に記載の
静電マイクロリレー。2. The electrostatic micro relay according to claim 1, wherein at least a portion of the movable substrate facing the signal line is removed.
点の間で電気的に接続したことを特徴とする請求項1又
は2に記載の静電マイクロリレー。3. The electrostatic micro-relay according to claim 1, wherein the fixed electrode is electrically connected between fixed contacts of the fixed substrate.
前記可動基板を単結晶シリコンで構成したことを特徴と
する請求項1ないし3のいずれか1項に記載の静電マイ
クロリレー。4. The fixed substrate is made of glass,
The electrostatic micro relay according to any one of claims 1 to 3, wherein the movable substrate is made of single crystal silicon.
の距離との比を、0.04〜2.00としたことを特徴と
する請求項4に記載の静電マイクロリレー。5. The electrostatic micro relay according to claim 4, wherein a ratio of a width of the signal line to a distance between the signal line and the fixed electrode is set to 0.04 to 2.00.
し、該弾性支持部に絶縁膜を介して可動接点を形成した
ことを特徴とする請求項1ないし5のいずれか1項に記
載の静電マイクロリレー。6. The movable substrate according to claim 1, wherein a second elastic support portion is formed on the movable substrate, and a movable contact is formed on the elastic support portion via an insulating film. An electrostatic microrelay as described.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28660298A JP3852224B2 (en) | 1998-10-08 | 1998-10-08 | Electrostatic micro relay |
| CN99118336.3A CN1131530C (en) | 1998-08-31 | 1999-08-31 | Process for mfg. Fe-B-R based permanent magnet with corrosion-resisting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28660298A JP3852224B2 (en) | 1998-10-08 | 1998-10-08 | Electrostatic micro relay |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004135813A Division JP2004281412A (en) | 2004-04-30 | 2004-04-30 | Electrostatic micro relay |
| JP2005357907A Division JP3852479B2 (en) | 2005-12-12 | 2005-12-12 | Electrostatic micro relay |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000113792A true JP2000113792A (en) | 2000-04-21 |
| JP2000113792A5 JP2000113792A5 (en) | 2005-04-28 |
| JP3852224B2 JP3852224B2 (en) | 2006-11-29 |
Family
ID=17706549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28660298A Expired - Lifetime JP3852224B2 (en) | 1998-08-31 | 1998-10-08 | Electrostatic micro relay |
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| Country | Link |
|---|---|
| JP (1) | JP3852224B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000060627A1 (en) * | 1999-04-02 | 2000-10-12 | Nec Corporation | Micromachine switch |
| US6486425B2 (en) * | 1998-11-26 | 2002-11-26 | Omron Corporation | Electrostatic microrelay |
| WO2004017350A1 (en) * | 2002-08-14 | 2004-02-26 | Intel Corporation | Electrode configuration in a mems switch |
| EP1246216A3 (en) * | 2001-03-27 | 2004-07-21 | Omron Corporation | Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method |
| JP2006351296A (en) * | 2005-06-14 | 2006-12-28 | Sony Corp | Movable element, and semiconductor device, module and electronic equipment incorporating the movable element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5081038B2 (en) | 2008-03-31 | 2012-11-21 | パナソニック株式会社 | MEMS switch and manufacturing method thereof |
-
1998
- 1998-10-08 JP JP28660298A patent/JP3852224B2/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6486425B2 (en) * | 1998-11-26 | 2002-11-26 | Omron Corporation | Electrostatic microrelay |
| WO2000060627A1 (en) * | 1999-04-02 | 2000-10-12 | Nec Corporation | Micromachine switch |
| JP3137108B2 (en) | 1999-04-02 | 2001-02-19 | 日本電気株式会社 | Micro machine switch |
| US6806788B1 (en) | 1999-04-02 | 2004-10-19 | Nec Corporation | Micromachine switch |
| EP1246216A3 (en) * | 2001-03-27 | 2004-07-21 | Omron Corporation | Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method |
| WO2004017350A1 (en) * | 2002-08-14 | 2004-02-26 | Intel Corporation | Electrode configuration in a mems switch |
| US6850133B2 (en) | 2002-08-14 | 2005-02-01 | Intel Corporation | Electrode configuration in a MEMS switch |
| JP2006351296A (en) * | 2005-06-14 | 2006-12-28 | Sony Corp | Movable element, and semiconductor device, module and electronic equipment incorporating the movable element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3852224B2 (en) | 2006-11-29 |
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