JP2000100565A - Manufacture of el element - Google Patents
Manufacture of el elementInfo
- Publication number
- JP2000100565A JP2000100565A JP10268494A JP26849498A JP2000100565A JP 2000100565 A JP2000100565 A JP 2000100565A JP 10268494 A JP10268494 A JP 10268494A JP 26849498 A JP26849498 A JP 26849498A JP 2000100565 A JP2000100565 A JP 2000100565A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- linear
- transparent
- thin film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 18
- 229920005989 resin Polymers 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000007772 electrode material Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- 239000000835 fiber Substances 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910018134 Al-Mg Inorganic materials 0.000 description 2
- 229910018467 Al—Mg Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- -1 aluminum chelate complex Chemical class 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 125000006617 triphenylamine group Chemical group 0.000 description 2
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002979 perylenes Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターン等の発光表示に用いら
れるEL素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an EL element used for light-emitting display such as a flat light source, a display, and other predetermined patterns.
【0002】[0002]
【従来の技術】従来、有機EL(エレクトルミネッセン
ス)素子は、ガラス等からなる透明な基板に、透光性の
ITO膜を一面に形成し、所定のストライプ状にエッチ
ングして透明電極を形成していた。透明電極は、500
Å〜3000Åの厚さに形成され、抵抗値を下げるため
に厚く形成される方が好ましい。そして、透明電極の上
に発光層を形成する。発光層は、有機EL材料が通常2
〜3層にわたって、500Å〜1500Å程度の厚さに
形成され、印加電圧を低くするために薄い方が好まし
い。さらに発光層の表面に蒸着等により背面電極材料を
設け、背面電極を形成する。2. Description of the Related Art Conventionally, an organic EL (electroluminescence) element is formed by forming a translucent ITO film on one surface of a transparent substrate made of glass or the like and etching it into a predetermined stripe to form a transparent electrode. I was 500 transparent electrodes
It is preferably formed to a thickness of {3000} and thick to reduce the resistance value. Then, a light emitting layer is formed on the transparent electrode. The light emitting layer is usually made of an organic EL material.
It is preferably formed to a thickness of about 500 ° to 1500 ° over up to three layers, and thinner to reduce the applied voltage. Further, a back electrode material is provided on the surface of the light emitting layer by vapor deposition or the like to form a back electrode.
【0003】ここで、発光層を構成する有機EL材料
は、トリフェニルアミン誘導体(TPD)等のホール輸
送材料と、発光材料であるアルミキレート錯体(Alq
3)等の電子輸送材料からなる。発光層は、ホール輸送
材料の上に電子輸送材料を積層したものや、これらの混
合層からなる。また、背面電極材料は、Al、Li、A
g、Mg、In等の金属またはこれらの合金からなる。Here, an organic EL material constituting a light emitting layer includes a hole transport material such as a triphenylamine derivative (TPD) and an aluminum chelate complex (Alq) as a light emitting material.
3 ) The electron transporting material as described above. The light emitting layer is composed of a layer in which an electron transporting material is laminated on a hole transporting material, or a mixed layer thereof. The back electrode material is Al, Li, A
It is made of a metal such as g, Mg, In, or an alloy thereof.
【0004】このようにして形成された発光部は、透明
電極と背面電極との間の所定の交点に所定の電流を流し
て発光層が発光する、いわゆるドットマトリックス方式
により駆動される。The light emitting section thus formed is driven by a so-called dot matrix method in which a predetermined current is applied to a predetermined intersection between the transparent electrode and the back electrode to cause the light emitting layer to emit light.
【0005】[0005]
【発明が解決しようとする課題】上記従来の技術の場
合、ITOの透明電極は大きな粒子の集積体であり、エ
ッチングされた端面は大きな凹凸のある荒い面となって
いる。従って、このような荒い面に薄い発光層や背面電
極を形成すると、その部分の膜厚が薄くばらつきも生
じ、背面電極と表面電極の短絡も発生しやすいものであ
った。In the case of the above-mentioned prior art, the transparent electrode of ITO is an aggregate of large particles, and the etched end face is a rough surface having large irregularities. Therefore, when a thin light-emitting layer or a back electrode is formed on such a rough surface, the film thickness at that portion becomes thin and varies, and a short circuit between the back electrode and the surface electrode is likely to occur.
【0006】そこで、図4に示すように、フォトッレジ
スト等の有機材料2をフォトエッチングにより透明電極
4に沿ったストライプ状に形成して、透明電極4の側縁
部の凹凸を覆うようにしたものもある。しかし、この場
合、有機材料2は感光性のある材料を用いなければなら
ず、エッチング工程の残さが発光層に悪影響を及ぼす可
能性もあり、製品の歩留まり低下の原因にもなるもので
あった。しかも、実際には有機材料2は、数μm程度と
透明電極と比べて十倍以上の厚さであり、その段差部分
での短絡や断線のおそれもあった。Therefore, as shown in FIG. 4, an organic material 2 such as a photoresist is formed in a stripe shape along the transparent electrode 4 by photoetching so as to cover the irregularities on the side edges of the transparent electrode 4. Some have done it. However, in this case, a photosensitive material must be used for the organic material 2, and the residue of the etching process may adversely affect the light emitting layer, which also causes a reduction in product yield. . Moreover, in practice, the organic material 2 has a thickness of about several μm, which is ten times or more the thickness of the transparent electrode, and there is a risk of short-circuit or disconnection at the step.
【0007】この発明は上記従来の技術の問題点に鑑み
てなされたものであり、簡単な構成で製造が容易であ
り、透明電極部での短絡や発光不良が生じないようにし
たEL素子の製造方法を提供することを目的としたもの
である。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has a simple structure, is easy to manufacture, and has an EL element in which a short circuit or a light emission failure does not occur in a transparent electrode portion. It is intended to provide a manufacturing method.
【0008】[0008]
【課題を解決するための手段】この発明のEL素子の製
造方法は、ガラスや樹脂等の透明な基板表面にITO等
の透明な電極材料により所定のピッチでストライプ状と
なるように透明電極を形成し、この透明電極にEL材料
からなる発光層を蒸着等の真空薄膜形成技術により積層
し、上記発光層の表面に、上記透明電極に対向し、直交
する方向にストライプ状に所定のピッチにAl−Li等
の背面電極を形成する。ここで、上記透明電極を形成
後、予め所定の張力が加えられた状態の単繊維形状の複
数の線状材料を上記透明電極に沿ってその透明電極を覆
うように配置し、上記線状材料は、所定のピッチでその
線状材料間に間隙が形成され、上記透明電極間のスペー
ス部分が上記間隙に対応するように配置される。そし
て、上記線状材料を介して上記透明電極の長手方向側縁
部を被覆する被覆材料を真空薄膜形成技術により設け、
この後上記EL材料及び背面電極を形成する。According to a method of manufacturing an EL device of the present invention, a transparent electrode is formed on a transparent substrate surface such as glass or resin by a transparent electrode material such as ITO so as to form a stripe at a predetermined pitch. A light emitting layer made of an EL material is laminated on the transparent electrode by a vacuum thin film forming technique such as vapor deposition, and is formed on the surface of the light emitting layer at a predetermined pitch in a stripe shape facing the transparent electrode in a direction orthogonal to the transparent electrode. A back electrode of Al-Li or the like is formed. Here, after the transparent electrode is formed, a plurality of single fiber-shaped linear materials in a state where a predetermined tension is applied in advance are arranged along the transparent electrode so as to cover the transparent electrode, and the linear material is formed. Are arranged such that a gap is formed between the linear materials at a predetermined pitch, and a space portion between the transparent electrodes corresponds to the gap. Then, a coating material for coating the longitudinal side edges of the transparent electrode through the linear material is provided by a vacuum thin film forming technique,
Thereafter, the EL material and the back electrode are formed.
【0009】また、上記線状材料は樹脂であり、この樹
脂線状材料は上記透明電極に沿って複数本密接して設け
られ、この複数本の線状材料毎に所定の間隙が形成され
ている。上記被覆材料は、絶縁性材料を真空薄膜形成技
術により設けるものである。Further, the linear material is a resin, and a plurality of the resin linear materials are provided in close contact with the transparent electrode, and a predetermined gap is formed for each of the plurality of linear materials. I have. The coating material is provided with an insulating material by a vacuum thin film forming technique.
【0010】また、上記透明電極の間のスペース部分に
は、上記透明電極の長手方向側縁部を覆わないように他
の線状材料を対面させ、上記透明電極の長手方向側縁部
を、導電性の被覆材料で被覆してもよい。この際、他の
線状材料に対応する部分には導電性の被覆材料は付着せ
ず、隣接する被覆材は互いに絶縁される。Further, another linear material is opposed to the space between the transparent electrodes so as not to cover the longitudinal side edges of the transparent electrode. It may be coated with a conductive coating material. At this time, the conductive coating material does not adhere to the portion corresponding to the other linear material, and the adjacent coating materials are insulated from each other.
【0011】さらに、上記真空薄膜形成技術により被覆
材料を付着させる際、あらかじめ上記密接した複数の線
状材料に被覆材料を付着させて、密接した上記線状材料
間の隙間を埋めるEL素子の製造方法である。また、上
記被覆材料は、黒色または暗色の材料を真空薄膜形成技
術により設けるものである。上記線状材料は、イミド系
樹脂の単繊維であり、接着剤でフレームに固定する。Further, when the coating material is applied by the vacuum thin film forming technique, a coating material is applied to the plurality of closely-connected linear materials in advance to fill the gaps between the closely-connected linear materials. Is the way. Further, the coating material is provided by using a black or dark material by a vacuum thin film forming technique. The linear material is a single fiber of an imide-based resin, and is fixed to the frame with an adhesive.
【0012】[0012]
【発明の実施の形態】以下、この発明の実施形態につい
て図面に基づいて説明する。この実施形態の有機EL素
子10は、ガラスや石英、樹脂等の透明な基板12の一
方の表面に、ITO等の透明な電極材料による透明電極
14が形成されている。この透明電極14は、所定のピ
ッチでストライプ状に基板12上に形成されている。透
明電極14の長手方向の側縁部には、エッチングにより
形成された側縁部端縁を覆うように被覆材料16が設け
られている。被覆材料16は、図1に示す構造の場合、
絶縁性材料であり、SiO2 やSiO、そのポリイミ
ド等の樹脂材料等である。Embodiments of the present invention will be described below with reference to the drawings. In the organic EL element 10 of this embodiment, a transparent electrode 14 made of a transparent electrode material such as ITO is formed on one surface of a transparent substrate 12 made of glass, quartz, resin or the like. The transparent electrodes 14 are formed on the substrate 12 in a stripe pattern at a predetermined pitch. A coating material 16 is provided on a side edge in the longitudinal direction of the transparent electrode 14 so as to cover an edge of the side edge formed by etching. The coating material 16 has the structure shown in FIG.
It is an insulating material, such as a resin material such as SiO 2 , SiO, or polyimide thereof.
【0013】また、透明電極14の表面には、500Å
程度のホール輸送材料、及び500Å程度の電子輸送材
料、その他発光材料によるEL材料からなる発光層が積
層される。そして発光層の表面には、Liを0.01〜
0.05%程度含む純度99%程度のAl−Li合金、
その他Al−Mg等の陰極材料による背面電極が、適宜
の500Å〜1000Å程度の厚みで積層される。この
背面電極は、透明電極と直交して対向し、ストライプ状
に形成される。これら基板12上に積層された透明電極
14から背面電極までが発光部を形成する。Further, the surface of the transparent electrode 14
A light emitting layer made of an EL material of a hole transporting material, an electron transporting material of about 500 °, and other light emitting materials is laminated. Then, on the surface of the light emitting layer, Li
Al-Li alloy of about 99% purity containing about 0.05%,
In addition, a back electrode made of a cathode material such as Al-Mg is laminated with an appropriate thickness of about 500 to 1000 mm. The back electrode is orthogonally opposed to the transparent electrode and is formed in a stripe shape. The area from the transparent electrode 14 laminated on the substrate 12 to the back electrode forms a light emitting section.
【0014】ここで発光層は、母胎材料のうちホール輸
送材料としては、トリフェニルアミン誘導体(TP
D)、ヒドラゾン誘導体、アリールアミン誘導体等があ
る。一方、電子輸送材料としては、アルミキレート錯体
(Alq3)、ジスチリルビフェニル誘導体(DPVB
i)、オキサジアゾール誘導体、ビスチリルアントラセ
ン誘導体、ベンゾオキサゾールチオフェン誘導体、ペリ
レン類、チアゾール類等を用いる。さらに適宜の発光材
料を混合してもよく、ホール輸送材料と電子輸送材料を
混合した発光層を形成してもよく、その場合、ホール輸
送材料と電子輸送材料の比は、10:90乃至90:1
0の範囲で適宜変更可能である。Here, the light-emitting layer is formed of a triphenylamine derivative (TP
D), hydrazone derivatives, arylamine derivatives and the like. On the other hand, as electron transporting materials, aluminum chelate complex (Alq 3 ), distyrylbiphenyl derivative (DPVB
i), oxadiazole derivatives, bistyrylanthracene derivatives, benzoxazolethiophene derivatives, perylenes, thiazoles and the like are used. Further, an appropriate light emitting material may be mixed, or a light emitting layer in which a hole transport material and an electron transport material are mixed may be formed. In this case, the ratio of the hole transport material to the electron transport material is 10:90 to 90. : 1
It can be changed appropriately within the range of 0.
【0015】この発明のEL素子の一実施形態の製造方
法は、ガラスや石英、樹脂等の透明な基板12の表面全
面に、ITO等の透明な電極材料を蒸着等により設け、
この表面にレジストを塗布し、所定のピッチを有するス
トライプ状のパターンを重ねる。次に露光、現像してス
トライプ状のパターンに対応した形状にレジストを残
す。そして透明な電極材料をエッチング処理し、所望の
ストライプ状の透明電極14を形成する。In the manufacturing method according to one embodiment of the EL element of the present invention, a transparent electrode material such as ITO is provided on the entire surface of a transparent substrate 12 made of glass, quartz, resin, or the like by vapor deposition or the like.
A resist is applied to this surface, and a stripe pattern having a predetermined pitch is overlaid. Next, the resist is exposed and developed to leave a resist in a shape corresponding to the stripe pattern. Then, the transparent electrode material is etched to form a desired striped transparent electrode 14.
【0016】そして、透明電極14の表面に発光層を形
成する前に、予め所定の張力が加えられた状態の樹脂単
繊維形状の複数の線状材料20を透明電極に沿ってその
透明電極14を覆うように5本ずつ対応させる。線状材
料20は、所定のピッチでその5本組の線状材料20の
間に間隙22が形成され、透明電極14間のスペース部
分が間隙22に対応するように配置されている。そし
て、線状材料20を介して透明電極14の長手方向側縁
部を被覆する被覆材料16を真空蒸着等の真空薄膜形成
技術により設ける。Before forming the light emitting layer on the surface of the transparent electrode 14, a plurality of linear materials 20 in the form of a resin single fiber to which a predetermined tension is applied in advance are applied along the transparent electrode. 5 each so as to cover. In the linear material 20, gaps 22 are formed between the set of five linear materials 20 at a predetermined pitch, and the space portions between the transparent electrodes 14 are arranged so as to correspond to the gaps 22. Then, a coating material 16 for covering the longitudinal side edge of the transparent electrode 14 via the linear material 20 is provided by a vacuum thin film forming technique such as vacuum deposition.
【0017】線状材料20は、図示しないフレームに固
定されている。フレームは、ステンレス等の合金や金
属、樹脂等の変形しにくい材料からなる矩形の環状のフ
レームであり、その表面に、ストライプ状に線状材料2
0を設ける。線状材料20は、ポリイミド系のアラミド
繊維などの樹脂系単繊維を5本1組で等間隔にフレーム
の開口部に配置したものである。この単繊維は、例えば
直径が約70μmで、0.5mm程度のピッチで等間隔
にフレームの開口部に配置し、長手方向に約3%伸張し
所定の張力を付与したものである。フレームとの固定部
は、単繊維を接着剤を介して、予め所定の治具により等
間隔で平行に配置し固定する。The linear material 20 is fixed to a frame (not shown). The frame is a rectangular ring-shaped frame made of an alloy such as stainless steel, a metal, a resin, or the like, which is hardly deformed.
0 is provided. The linear material 20 is one in which five resin-based single fibers such as polyimide-based aramid fibers are arranged at equal intervals in the opening of the frame. The single fibers have a diameter of, for example, about 70 μm, are arranged at equal intervals in the opening of the frame at a pitch of about 0.5 mm, and are stretched about 3% in the longitudinal direction to give a predetermined tension. In the fixing portion to the frame, the single fibers are arranged and fixed in parallel at equal intervals in advance with a predetermined jig via an adhesive.
【0018】被覆材料16の蒸着に際して、線状材料2
0によるマスクを透明電極14に重ね合わせ、図1に示
すように線状材料20の長手方向とストライプ状の透明
電極14のストライプ方向とを平行にして線状材料20
を重ね合わせる。このとき線状材料20は5本で1組が
透明電極14の表面に対面し、透明電極14間のスペー
スには線状材料20の各5本組の間隙22が位置する。When the coating material 16 is deposited, the linear material 2
0 is superimposed on the transparent electrode 14, and as shown in FIG. 1, the longitudinal direction of the linear material 20 is
Overlaid. At this time, a set of five linear materials 20 faces the surface of the transparent electrode 14, and a gap 22 of each set of five linear materials 20 is located in a space between the transparent electrodes 14.
【0019】線状材料20が設けられたマスクは、基板
12に対して蒸着源側に位置し、マスクの線状材料20
が透明電極14に押し当てられた状態とする。また、蒸
着に先立って、あらかじめ線状材料20に被覆材料16
を蒸着させると、5本組の線状材料20の隙間が埋めら
れ、透明電極14への被覆材料16の蒸着時に、透明電
極14の側縁部以外には被覆材料16が付着しない。The mask provided with the linear material 20 is located on the side of the vapor deposition source with respect to the substrate 12, and the linear material 20 of the mask is provided.
Is pressed against the transparent electrode 14. Prior to the vapor deposition, the coating material 16 is applied to the linear material 20 in advance.
Is deposited, the gaps between the five linear materials 20 are filled, and when the coating material 16 is deposited on the transparent electrode 14, the coating material 16 does not adhere to portions other than the side edges of the transparent electrode 14.
【0020】そして、蒸着後、線状材料20を透明電極
14上から除去する。これにより、線状材料20間の間
隙22から透明電極14間のスペース部分に蒸着した被
覆材料16が、透明電極14のエッチングされた側面を
覆い、なめらかにする。この場合、被覆材料16は絶縁
体である。After the deposition, the linear material 20 is removed from the transparent electrode 14. As a result, the coating material 16 deposited on the space between the transparent electrodes 14 from the gaps 22 between the linear materials 20 covers the etched side surfaces of the transparent electrodes 14 and smoothes them. In this case, the coating material 16 is an insulator.
【0021】次に透明電極14及び被覆材料16の表面
に、例えばEL材料としてTPD等のホール輸送材料か
らなるホール輸送層、Alq3等の電子輸送材料からな
る電子輸送層やその他発光材料からなる層を、真空蒸着
やスパッタリング、その他真空薄膜形成技術により積層
し、発光層を形成する。[0021] Then the surface of the transparent electrode 14 and the covering material 16, for example, a hole transport layer made of a hole transporting material TPD such as EL material, an electron transporting layer or other light-emitting material formed of an electron transporting material such as Alq 3 The layers are stacked by vacuum deposition, sputtering, or other vacuum thin film forming techniques to form a light emitting layer.
【0022】蒸着条件として、例えば、真空度が6×1
0−6Torrで、EL材料の場合50Å/secの蒸
着速度で成膜させる。また発光層14等は、フラッシュ
蒸着により形成してもよい。フラッシュ蒸着法は、予め
所定の比率で混合したEL材料を、300℃〜600℃
好ましくは400℃〜500℃に加熱した蒸着源に落下
させ、EL材料を一気に蒸発させるものである。またそ
のEL材料を容器中に収容し、急速にその容器を加熱
し、一気に蒸着させるものでもよい。The deposition conditions include, for example, a degree of vacuum of 6 × 1
At 0-6 Torr, a film is formed at a deposition rate of 50 ° / sec in the case of an EL material. The light emitting layer 14 and the like may be formed by flash evaporation. In the flash evaporation method, an EL material previously mixed at a predetermined ratio is heated to 300 ° C. to 600 ° C.
Preferably, the EL material is dropped onto a deposition source heated to 400 ° C. to 500 ° C. to evaporate the EL material at a stretch. Alternatively, the EL material may be housed in a container, and the container may be rapidly heated and vapor-deposited at once.
【0023】次に、Liを0.01〜0.05%程度含
む純度99%程度のAl−Li合金、その他Al−Mg
等の陰極材料からなる背面電極材料を、発光層及びマス
クの表面に真空蒸着等の真空薄膜形成技術により設け
る。このときも、樹脂系の線状材料を用いたマスクを利
用して、透明電極14と直交する方向に背面電極を形成
することができる。Next, an Al-Li alloy containing about 0.01 to 0.05% of Li and having a purity of about 99%, other Al-Mg
A back electrode material made of a cathode material is provided on the surface of the light emitting layer and the mask by a vacuum thin film forming technique such as vacuum deposition. Also at this time, the back electrode can be formed in a direction perpendicular to the transparent electrode 14 using a mask using a resin-based linear material.
【0024】樹脂系の線状材料20のマスクは、およそ
20回程度繰り返し使用することができ、取り替えに際
しては、マスクの単繊維と接着剤を除去し、上記と同様
の方法でフレーム18に新しい単繊維を接着してマスク
22を設ける。The mask made of the resin-based linear material 20 can be used repeatedly about 20 times. When replacing the mask, the single fiber and the adhesive of the mask are removed, and a new one is formed on the frame 18 in the same manner as described above. The mask 22 is provided by bonding single fibers.
【0025】また、発光層と背面電極の全面には、図示
しないSiO等の絶縁性の保護膜等を、真空蒸着やスパ
ッタリング、その他真空薄膜形成技術により形成しても
よい。さらに、撥水膜や樹脂の保護膜等を設けてもよ
い。On the entire surface of the light emitting layer and the back electrode, an insulating protective film such as SiO (not shown) may be formed by vacuum evaporation, sputtering, or other vacuum thin film forming techniques. Further, a water repellent film, a resin protective film, or the like may be provided.
【0026】この実施形態のEL素子の製造方法によれ
ば、樹脂系の単繊維のマスクを用いて透明電極14の側
縁部のエッチング断面を被覆材料16で覆うことによ
り、この断面での凹凸による短絡や発光不良を確実に防
止することができる。さらに、エッチング等の化学的工
程がないので、発光層に悪影響がなく、製造工程も簡単
なものである。According to the manufacturing method of the EL element of this embodiment, the etching cross section of the side edge of the transparent electrode 14 is covered with the coating material 16 using the resin-based single fiber mask. Short-circuiting and poor light emission can be reliably prevented. Further, since there is no chemical process such as etching, there is no adverse effect on the light emitting layer, and the manufacturing process is simple.
【0027】また、図2に示すように、透明電極14間
に対応する部分に、同様にマスクとしての線状材料24
を配置し線状材料20と線状材料24との間に被覆材料
16が蒸着されるようにしてもよい。これにより、透明
電極14の長手方向側縁部を被覆するとともに、各透明
電極14間の被覆材料16が連続しないので、被覆材料
16として導電性材料を用いることができる。ここで用
いる導電性材料の被覆材料としては、Alやカーボンで
ある。Alの場合、透明電極の電気抵抗に起因する発光
ムラを抑えることができ、また反射率が高いことから平
面方向の発光を反射して透明基板側に反射させることが
可能となる。また、カーボンを被覆材料として用いるこ
とにより、透明電極による各発光素子間の光のにじみを
防止し、コントラストを向上させる。As shown in FIG. 2, a linear material 24 similarly serving as a mask is
May be arranged so that the coating material 16 is deposited between the linear material 20 and the linear material 24. This covers the longitudinal side edges of the transparent electrodes 14 and the coating material 16 between the transparent electrodes 14 is not continuous, so that a conductive material can be used as the coating material 16. The coating material of the conductive material used here is Al or carbon. In the case of Al, light emission unevenness due to electric resistance of the transparent electrode can be suppressed, and since the reflectance is high, light emission in a planar direction can be reflected and reflected to the transparent substrate side. Further, by using carbon as a coating material, bleeding of light between the light emitting elements by the transparent electrode is prevented, and the contrast is improved.
【0028】なおこの発明のEL素子の製造方法は、上
記実施形態に限定されるものではなく、マスクの線状材
料の本数や間隔、大きさは透明電極等に対応させて適宜
設定することができ、材料も樹脂以外に、金属やその他
の繊維を用いることも可能である。またフレームの形状
は基板よりも大きな内部空間を有し、マスクにより歪み
が生じないものであればよく、また接着剤以外の材料を
用いてフレームに固定してもよい。また背面電極は、A
l、Li、Ag、Mg、In等の金属またはこれらの合
金を用いるよい。The method of manufacturing an EL element according to the present invention is not limited to the above embodiment, and the number, interval, and size of the linear material of the mask can be appropriately set in accordance with a transparent electrode or the like. It is possible to use metals and other fibers in addition to resin. Further, the shape of the frame may be any shape as long as it has an internal space larger than that of the substrate and does not cause distortion by the mask, or may be fixed to the frame using a material other than the adhesive. The back electrode is A
A metal such as 1, Li, Ag, Mg, In, or an alloy thereof may be used.
【0029】また被覆材料は、上記以外に、黒色また暗
色の絶縁材料を用いても良く、導電性材料をAl以外の
金属を用いてもよい。Further, as the coating material, in addition to the above, a black or dark insulating material may be used, and a metal other than Al may be used as the conductive material.
【0030】[0030]
【発明の効果】この発明のEL素子の製造方法によれ
ば、線状材料のマスクを用いて、透明電極の側縁部を被
覆材料で覆い、電極間の短絡を確実に防止することがで
きるものである。またその製造も容易であり、エッチン
グ等の処理やその後の洗浄工程がなく、発光層に与える
悪影響がきわめて少なく、製造コストも安価なものであ
る。According to the method for manufacturing an EL device of the present invention, the side edges of the transparent electrodes are covered with the coating material using the mask of the linear material, and the short circuit between the electrodes can be reliably prevented. Things. In addition, its manufacture is easy, there is no treatment such as etching or a subsequent cleaning step, the adverse effect on the light emitting layer is extremely small, and the manufacturing cost is low.
【図1】この発明の一実施形態のEL素子の一製造工程
を示す断面図である。FIG. 1 is a cross-sectional view showing one manufacturing step of an EL element according to an embodiment of the present invention.
【図2】この発明の他の実施形態を示す断面図である。FIG. 2 is a sectional view showing another embodiment of the present invention.
【図3】この発明の他の実施形態の透明電極端縁部の拡
大断面図でる。FIG. 3 is an enlarged sectional view of an edge portion of a transparent electrode according to another embodiment of the present invention.
【図4】従来のEL素子の一製造工程を示す断面図であ
る。FIG. 4 is a cross-sectional view showing one manufacturing process of a conventional EL element.
12 基板 14 透明電極 16 被覆材料 20,24 線状材料 22 間隙 12 Substrate 14 Transparent electrode 16 Coating material 20, 24 Linear material 22 Gap
───────────────────────────────────────────────────── フロントページの続き (72)発明者 福本 滋 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 山本 肇 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 Fターム(参考) 3K007 AB01 AB05 AB08 AB18 CA01 CA02 CA05 CB00 CB01 DA00 DB03 EB00 FA01 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Shigeru Fukumoto 3158, Shimo-Okubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Inside (72) Inventor Hajime Yamamoto 3158, Shimo-Okubo, Osawano-cho, Kamishinkawa-gun, Toyama Hokuriku Electric Industry F term in the company (reference) 3K007 AB01 AB05 AB08 AB18 CA01 CA02 CA05 CB00 CB01 DA00 DB03 EB00 FA01
Claims (6)
所定のピッチでストライプ状となるように透明電極を形
成し、この透明電極にEL材料からなる発光層を真空薄
膜形成技術により積層し、上記発光層の表面に、上記透
明電極に対向し、直交する方向にストライプ状に所定の
ピッチに背面電極を形成するEL素子の製造方法におい
て、 上記透明電極を形成後、予め所定の張力が加えられた状
態の単繊維形状の複数の線状材料を上記透明電極に沿っ
てその透明電極を覆うように配置し、上記線状材料は、
所定のピッチでその線状材料間に間隙が形成され、上記
透明電極間のスペース部分が上記間隙に対応するように
配置され、上記線状材料を介して上記透明電極の長手方
向側縁部を被覆する被覆材料を真空薄膜形成技術により
設け、この後上記EL材料及び背面電極を形成すること
を特徴とするEL素子の製造方法。1. A transparent electrode is formed on a transparent substrate surface with a transparent electrode material so as to form a stripe at a predetermined pitch, and a light emitting layer made of an EL material is laminated on the transparent electrode by a vacuum thin film forming technique. In a method for manufacturing an EL element, on a surface of the light emitting layer, a back electrode is formed at a predetermined pitch in a stripe shape in a direction orthogonal to the transparent electrode in a direction orthogonal to the transparent electrode, a predetermined tension is applied in advance after forming the transparent electrode. A plurality of linear materials in a single fiber shape in the state of being arranged are arranged along the transparent electrode so as to cover the transparent electrode, and the linear material is
A gap is formed between the linear materials at a predetermined pitch, a space between the transparent electrodes is arranged so as to correspond to the gap, and a longitudinal side edge of the transparent electrode is interposed through the linear material. A method for manufacturing an EL element, comprising: providing a coating material to be coated by a vacuum thin film forming technique, and thereafter forming the EL material and the back electrode.
状材料は上記透明電極に沿って複数本密接して設けられ
る請求項1記載のEL素子の製造方法。2. The method according to claim 1, wherein the linear material is a resin, and a plurality of the resin linear materials are provided in close contact with the transparent electrode.
形成技術により設ける請求項1または2記載のEL素子
の製造方法。3. The method for manufacturing an EL element according to claim 1, wherein said coating material is provided by using an insulating material by a vacuum thin film forming technique.
記透明電極の長手方向側縁部を覆わないように線状材料
を対面させ、上記透明電極の長手方向側縁部を、導電性
の被覆材料で被覆する請求項1または2記載のEL素子
の製造方法。4. A linear material is opposed to a space between the transparent electrodes so as not to cover a longitudinal side edge of the transparent electrode, and the longitudinal side edge of the transparent electrode is electrically conductive. 3. The method for manufacturing an EL element according to claim 1, wherein the EL element is coated with a coating material.
付着させる際、あらかじめ上記密接した複数の線状材料
に被覆材料を付着させて、密接した上記線状材料間の隙
間を埋める請求項2記載のEL素子の製造方法。5. The method according to claim 2, wherein when the coating material is applied by the vacuum thin film forming technique, the coating material is applied to the plurality of closely-connected linear materials in advance to fill gaps between the closely-connected linear materials. Method for manufacturing an EL element.
を真空薄膜形成技術により設ける請求項1,2,3また
は4記載のEL素子の製造方法。6. The method for manufacturing an EL element according to claim 1, wherein said coating material is a black or dark color material provided by a vacuum thin film forming technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10268494A JP2000100565A (en) | 1998-09-22 | 1998-09-22 | Manufacture of el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10268494A JP2000100565A (en) | 1998-09-22 | 1998-09-22 | Manufacture of el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000100565A true JP2000100565A (en) | 2000-04-07 |
Family
ID=17459289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10268494A Pending JP2000100565A (en) | 1998-09-22 | 1998-09-22 | Manufacture of el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000100565A (en) |
-
1998
- 1998-09-22 JP JP10268494A patent/JP2000100565A/en active Pending
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