JP2000195778A - Exposure apparatus and method for manufacturing telecentricity-unevenness correction member - Google Patents

Abstract

(57) Abstract: A method of manufacturing an exposure apparatus and a correction means capable of preventing deterioration of optical characteristics in an illumination system of an exposure apparatus or the like and illuminating a surface to be irradiated (mask, photosensitive substrate) satisfactorily. Further, the present invention provides a method of manufacturing an exposure apparatus and an exposure method. The light source includes an illumination optical system for illuminating a transfer pattern of a mask with illumination light emitted from the light source, and exposes a photosensitive substrate based on light passing through the transfer pattern. Optical systems 1 to 20
In c, a telecentricity correction member 14 for correcting the telecentricity of the exposure light incident on the photosensitive substrate W is disposed at a position K1 substantially conjugate to the mask R in the optical path of the illumination optical systems 1 to 20c. .

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus and a method of manufacturing a telecentricity correction member, and more particularly, to an exposure apparatus and a telecentricity correction apparatus used for manufacturing a semiconductor device, a liquid crystal display element substrate, a printed circuit board, and the like. The present invention relates to a method for manufacturing a correction member. Furthermore, the present invention relates to a method of manufacturing an exposure apparatus and an exposure method.

[0002]

2. Description of the Related Art In recent years, with the remarkable progress of high integration of semiconductor element circuits, an exposure apparatus capable of transferring a fine pattern with high accuracy has been required. As a type of the conventional exposure apparatus, for example, a proximity exposure apparatus for patterning a color filter or the like for a liquid crystal display,
There are an exposure apparatus typified by a stepper for manufacturing semiconductor elements and the like, and a large-screen exposure apparatus for manufacturing liquid crystal display elements and the like. Hereinafter, these exposure apparatuses will be briefly described.

First, a proximity exposure apparatus uses a mask having substantially the same size as a substrate. Then, the pattern drawn on the mask is transferred onto a photosensitive substrate provided with a gap of about 30 to 100 μm from the mask. The proximity exposure apparatus is designed such that the tilt angle of the telecentricity of the illumination light applied to the mask is substantially 0 °, that is, the principal ray is substantially perpendicular to the substrate. This is because when the tilt angle of telecentricity deviates from 0 °, the flatness of the mask itself, the flatness of the substrate, the flatness of the holder on which the substrate is placed, and the gap between the mask and the substrate This is because distortion (distortion) is generated in the pattern transferred onto the substrate due to a variation in setting or the like.

Next, a stepper uses a reticle as a mask. Then, the pattern formed on the reticle is transferred onto a wafer (photosensitive substrate) via a projection optical system. This stepper is usually designed so that the illumination optical system corrects the telecentricity error (telecentric error) generated by the projection optical system in order to secure the telecentricity on the wafer. This is mainly for two reasons. One of them is, like the proximity exposure apparatus described above, when the inclination angle of the telecentricity of the exposure light on the wafer deviates from 0 °, the flatness of the wafer with respect to the exposure area, the flatness of the holder, Furthermore, distortion is generated on the wafer due to the setting of auto focus, detection accuracy, and the like. Secondly, since the semiconductor element is usually composed of a plurality of layers, when the inclination angle shifts, the flatness error of the holder when forming each layer, the deformation of the wafer during the working process, etc. This is because the overlay accuracy when forming a plurality of layers is also deteriorated.

[0005] Exposure apparatuses for liquid crystal display elements are mainly classified into two types. One is a stepper type exposure apparatus that divides a large screen into several parts, sequentially forms the divided screens, and finally joins them to form a large screen. The other is a scan type exposure apparatus that forms a large screen by scanning and exposing a large mask at the same magnification. Both of these exposure apparatuses are designed to secure telecentricity on the substrate for the same reason as the above-described exposure apparatuses.

[0006]

As described above, all of the above-mentioned conventional exposure apparatuses have to secure the telecentricity on the substrate. A design that reduces the telecentricity is required for the illumination optical system. Further, the illumination optical system has been required to be designed to reduce factors that cause deterioration of optical characteristics such as uneven illuminance or uneven numerical aperture on the substrate. This is because the mask pattern is uniformly transferred over the entire exposure region by making the illuminance or the numerical aperture in the exposure region on the substrate uniform. Thus, when designing the illumination optical system,
Telecentricity as little as possible,
The design was designed to reduce unevenness in illuminance and numerical aperture.

However, for example, in an exposure apparatus for projecting and exposing a mask pattern via a projection optical system, the telecentricity irregularities generated in the projection optical system, the thickness of the glass material of the projection optical system, and the unevenness of the antireflection film are not uniform. It is considerably difficult in design to correct the illuminance unevenness or the like generated due to the nature or the like. Further, even if all these unevennesses can be removed in theory, in reality, the size of the exposure apparatus is limited, and for example, the number of lenses that can be mounted on the illumination optical system or the projection optical system is also limited. Therefore, residual unevenness that cannot be sufficiently corrected remains.

Further, even if telecentricity irregularities and illuminance irregularities can be corrected to some extent by design, irregularities not expected in design will occur after the actual manufacturing process. Therefore, the present invention provides an exposure apparatus and a method of manufacturing a telecentricity correction member that can illuminate an irradiated surface (mask, photosensitive substrate) satisfactorily by preventing deterioration of optical characteristics in an illumination system such as an exposure apparatus. It is still another object of the present invention to provide a method of manufacturing an exposure apparatus and an exposure method.

[0009]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above object. That is, when the reference numerals in the accompanying drawings are added in parentheses, the present invention according to claim 1 is a light source. (2) and an illumination optical system (1) for illuminating the transfer pattern of the mask (R) with illumination light emitted from the light source (2).
And an exposure apparatus that exposes the photosensitive substrate (W) based on the light that has passed through the transfer pattern, and is substantially conjugate to the mask (R) in the optical path of the illumination optical system (1 to 20c). An exposure apparatus, wherein a telecentricity correction unit (14) for correcting the telecentricity of exposure light incident on the photosensitive substrate (W) is disposed at a position (K1). At that time, the exposure apparatus has a projection optical system (24) for projecting a transfer pattern onto the photosensitive substrate (W) between the mask (R) and the photosensitive substrate (W), and includes a telecentricity correction unit. (14) is preferably formed such that the tilt angle of the telecentricity of the exposure light is substantially 0 °.

Further, as described in claim 2, the illumination optical system (1 to 20c) has a larger mask (R) than the telecentricity correction means (14) in the optical path of the illumination optical system (1 to 20c). It is preferable to arrange a visual field limiting means (17) for limiting the illumination area of the mask (R) on the side. Further, as described in claim 3, the illumination optical system (1 to 20)
c) has at least two positions (K1, K2) conjugate to the mask (R), and telescopes to the conjugate position (K1) on the side closer to the light source (2) among the two conjugate positions (K1, K2). A centricity correction unit (14) is provided, and a light source (2) is provided.
It is preferable to dispose a field-of-view limiting means (17) for limiting the illumination area of the mask (R) at a conjugate position (K2) farther from the camera. The illumination optical system (1 to 20c) is provided on the photosensitive substrate (W) at a position apart from the position (K1, K2) conjugate with the mask (R) in the optical path of the illumination optical system (1 to 20c). It is preferable to dispose an illuminance unevenness correction unit (13) for correcting the illuminance unevenness of the incident exposure light. The illumination optical system (1 to 20c) is provided on the photosensitive substrate (W) at a position apart from the position (K1, K2) conjugate with the mask (R) in the optical path of the illumination optical system (1 to 20c). It is preferable to arrange a numerical aperture non-uniformity correction means for correcting numerical aperture non-uniformity of the incident exposure light.

In the exposure apparatus, a telecentricity measuring device (30) for measuring a tilt angle of telecentricity of the exposure light may be arranged so as to be movable to an exposure position of the photosensitive substrate (W). preferable. The illumination optical system (1 to 20c) has a plurality of illumination aperture stops (9a, 9b) for determining the numerical aperture of illumination light incident on the mask (R), and the plurality of illumination aperture stops (9a). , 9
b) the illumination aperture stop switching means (40) for switching, and the telecentricity correction means (14a, 14b) corresponding to the illumination aperture stop (9a, 9b) switched by the illumination aperture stop switching means (40). Telecentricity correction member switching means (41) for switching
It is preferable to further have In addition, the illumination optical system (1 to
20c) has a plurality of illumination aperture stops (9a, 9b) for determining the numerical aperture of illumination light incident on the mask (R), and switches the plurality of illumination aperture stops (9a, 9b). A spherical lens (6a, 6b) having switching means (40) and corresponding to the illumination aperture stop (9a, 9b) switched by the illumination aperture stop switching means (40).
Alternatively, it is preferable to further include a correction member switching means (43) for exchanging or detaching the parallel plane plate (16).

The present invention according to claim 4 provides a light source (2)
And an illumination optical system (1 to 20c) for illuminating the transfer pattern of the mask (R) with illumination light emitted from the light source (2), and based on the light passing through the transfer pattern, the photosensitive substrate (W) Optical system (1 to 20c) of an exposure apparatus that exposes light
In the method for manufacturing the telecentric resizing member (14) arranged at a position (K1) substantially conjugate with the mask (R) in the optical path of (1), the exposure light at each position within the exposure region of the photosensitive substrate (W) is exposed. A first step of calculating the tilt angle of the telecentricity, and a second step of converting the tilt angle of the telecentricity into a correction amount at the arrangement position (K1) of the telecentricity correction member (14). A method for manufacturing a telecentricity correction member. At this time, as described in claim 5, the second
After the step, it is preferable to further include a third step of smoothing the correction amount.

The present invention also provides a light source (2) and a light source (2)
An illumination optical system (1 to 20c) for illuminating a transfer pattern of a mask (R) with illumination light emitted from the light source, and exposing a photosensitive substrate (W) based on light passing through the transfer pattern. The illumination optical system (1 to 20c) is provided at a position apart from the position (K1, K2) conjugate with the mask (R) in the optical path of the illumination optical system (1 to 20c).
The exposure apparatus may further include a numerical aperture non-uniformity correction unit that corrects numerical aperture non-uniformity of the exposure light incident on the exposure apparatus.

[0014]

Embodiments of the present invention will be described with reference to the drawings. 1 to 3 show a first example of an exposure apparatus according to the present invention.
An example will be described. FIG. 1 is a schematic view showing an exposure apparatus according to a first embodiment of the present invention, which is a projection exposure apparatus for manufacturing a semiconductor device. The illumination light beam emitted from the light source 2 such as an ultra-high pressure mercury lamp is reflected by the elliptical mirror 1, passes through the mirror 3, and is focused on the second focal point 5 of the elliptical mirror 1. here,
The light source 2 is arranged at a first focal position of the elliptical mirror 1.
Further, a shutter 4 is provided at the second focal position 5, and the opening and closing of the shutter 4 controls transfer and non-transfer of the exposure light onto the wafer W.

The illuminating luminous flux diverged after being condensed at the second focal position 5 is converted into a parallel luminous flux by the collector lens 6 and enters the wavelength selection filter 7. The illumination light beam after the exposure wavelength is selected by the wavelength selection filter 7 enters the optical integrator 8. Here, the optical integrator 8 is formed of a fly-eye lens (fly-eye integrator) in which many positive lenses are bundled. This allows the optical
On the exit surface side of the integrator 8, a number of light source images equal to the number of positive lenses are formed, and a substantial surface light source is formed. An illumination aperture stop 9 is provided on the exit surface of the optical integrator 8. The illumination aperture stop 9 can set the ratio (σ value) of the aperture of the light source image on the imaging aperture stop surface to the aperture diameter of the imaging aperture stop (not shown) of the projection lens 24. Determines the lighting conditions. Here, the size of the opening of the illumination aperture stop 9 is configured to be variable by a drive unit D9, and the drive device D9 is controlled by a control unit CU.

Light beams from a large number of light source images formed by the optical integrator 8 are condensed by the first relay lens 10 on the first reticle conjugate plane K1.
Here, the illumination optical system of the present apparatus has two surfaces conjugate with the reticle R in its optical path, the reticle conjugate surface on the front side is a first reticle conjugate surface K1, and the reticle conjugate surface on the rear side is the first reticle conjugate surface. A reticle conjugate plane K2 is used. In addition, a telecentricity correction plate 14 is disposed near the first reticle conjugate plane K1. The telecentricity correction plate 14 is formed of a glass plate, and its entrance surface or exit surface is formed in an aspherical shape. The telecentricity correction plate 14 is a member that corrects the telecentricity correction for each position in the exposure area of the exposure light incident on the wafer W. Further, the reticle conjugate surface on which the telecentricity correction plate 14 is disposed is also a conjugate surface of the wafer W, and therefore is a position that hardly affects the illuminance uniformity and the numerical aperture uniformity on the wafer W. The light beam emitted from the telecentricity correction plate 14 is
The light passes through the relay lens 15 and uniformly illuminates the blind 17 as a field stop. Here, blind 17
Are arranged near the second reticle conjugate plane K2,
The field of view for illuminating the reticle R is determined. Specifically, the size of the illumination range for the reticle R is changed by changing the opening area of the blind 17 by the driving device D17. The driving device D17 is controlled by the control unit CU.

The luminous flux transmitted through the blind 17 passes through the blind relay systems 20a, 20b, and 20c.
The reticle R on which the pattern is drawn is illuminated. Reticle R is held by reticle stage RS.
The exposure light transmitted through the reticle R is transmitted through the projection lens 24 and projects an image of a reticle pattern on the wafer W mounted on the wafer holder 25. At this time, an image in the opening of the illumination aperture stop 9 provided on the exit surface of the optical integrator 8 is formed on the entrance pupil plane of the projection lens 24, thereby realizing so-called Koehler illumination. Here, the wafer holder 25 is held on the wafer stage 18. Further, the wafer stage 18 can be moved in the XYZ directions by the drive unit 28. At that time, the driving unit 28
Is provided with a detector such as an encoder, and can measure the position of the wafer W in the Z direction. The drive unit 28 is controlled by the control unit CU.

On the wafer stage 18, in addition to the wafer holder 25 on which the wafer W is mounted, a sensor 30
And a movable mirror 26 are arranged. The sensor unit 30 can detect an image of the reticle pattern. That is, on the reticle stage RS, for example, instead of the actual exposure reticle R, a test reticle having a measurement pattern in which a large number of measurement marks are formed in a two-dimensional matrix is arranged. If you have
The sensor unit 30 can photoelectrically detect the image of the measurement pattern on the test reticle. Information photoelectrically detected by the sensor unit 30 is input to the control unit CU. Then, the movable mirror 26 and the wafer stage 1
The two-dimensional position of the wafer stage 18 in the XY directions can be detected by the laser interferometer 27 disposed outside the wafer stage 8.

The position information from the laser interferometer 27 as a position detecting device is input to the control unit CU, and the control unit CU transmits the position information in the XY directions from the laser interferometer 27 and Z such as encoder
The driving amount in each of the XYZ directions in the driving unit 28 is controlled based on the Z-direction position information from the direction position detecting device. Accordingly, after adjusting the position of the wafer stage 18 in the Z direction, the sensor unit 30 detects the image of the measurement mark of the test reticle while detecting the position of the wafer stage 18 in the XY directions by the laser interferometer 27. . Then, after moving the wafer stage 18 by a predetermined amount in the Z direction via the driving unit 28, the sensor unit 30 detects the measurement mark image while detecting the position in the XY directions again by the laser interferometer 27. Do.

As described above, the detection of one measurement mark image is performed by the sensor unit 3 while moving by a predetermined amount in the Z direction.
By performing the measurement several times at 0, it is possible to detect the telecentricity in the area where the measurement mark image is formed. Therefore, by performing the above measurement for each measurement mark image formed two-dimensionally, the telecentricity on the wafer W can be measured over the entire exposure area. That is, detection information (detection signal) from each measurement mark image from the sensor unit 30
And a position detecting device (laser interferometer 27 and driving unit 28)
Position information in the XYZ directions from the encoders within the control unit CU is input to the arithmetic unit inside the control unit CU, and the sensor unit 30
Information and position detection device for each measurement mark image from laser (laser interferometer 27 and encoder in drive unit 28)
Based on the position information in the XYZ directions from, the calculation unit inside the control unit CU calculates the amount of deviation from the telecentric over the entire exposure area (the entire imaging plane of the projection lens 24) on the wafer W (the optical axis of the projection system 24). Of the principal ray at each image height).

Then, an arithmetic unit inside the control unit CU displays a calculation result regarding the amount of deviation from telecentricity via a display device 50 such as a CRT monitor.
The operator can judge the quality of the telecentricity over the entire exposure area on the wafer W (the entire imaging plane of the projection lens 24) through the display device 50. on the other hand,
An arithmetic unit inside the control unit CU outputs a calculation result regarding the amount of deviation from telecentricity to the recording device 51, and this output information is recorded on the recording medium such as a magnetic disk or an optical disk by the recording device 51.

Next, the configuration of the sensor section 30 will be described with reference to FIG. As shown in FIG.
Mainly include a pattern plate P, a relay lens 32, and a CC
It is configured by an image detection sensor 33 such as D. The pattern plate P is arranged so that the height of the surface thereof is equal to the height of the exposure surface on the wafer W. The light beam incident on the pattern plate P passes through the relay lens 32 and forms an image on the image detection sensor 33. Here, the relay lens 32 and the image detection sensor 33 are incorporated inside the wafer stage 18. The image detection sensor 33 is electrically connected to a calculation unit inside the control unit CU, and the photoelectric conversion signal from the image detection sensor 33 is transmitted to the control unit C
It is input to the arithmetic unit inside U.

Hereinafter, a method of measuring the telecentricity by the sensor unit 30 will be briefly described. FIG. 2B is a diagram illustrating an imaging area 35 of the pattern plate P. In the imaging area 35 of the pattern plate P, a pattern plate pattern 36 is formed. On the other hand, it is assumed that a test reticle is arranged on the reticle stage RS, for example, instead of the actual exposure reticle R. A plurality of measurement marks (hereinafter, referred to as reticle marks) are two-dimensionally formed in a matrix at predetermined intervals on a test reticle having a measurement pattern in which a large number of measurement marks are formed. ing. And
By moving the wafer stage 18 in the X and Y directions, the images 37 of the reticle marks are sequentially formed in the area of the pattern plate pattern 36. Then, the position of the image 37 of the reticle mark with respect to the position of the pattern plate P is measured. Normally, a measurement method for obtaining the difference between the marks from the edge portion of the image 37 of the reticle mark, a measurement method based on detection of a peak value of signal intensity and detection of a midpoint of a slice level, and the like are used.

At this time, the position of the wafer stage 18 is
Since the measurement is performed by the laser interferometer 27, the accurate position of the image 37 of the reticle mark in the X and Y directions can be obtained. Then, the wafer stage is moved in the Z direction by a small amount, and such measurement is repeatedly performed, so that the tilt angle of the telecentricity for each location in the exposure region of the exposure light is calculated by the arithmetic unit in the control unit CU. Can be calculated. In the first embodiment, the measurement method by image processing was used to measure the telecentricity irregularity. Instead, the measurement mark image was exposed by exposing the measurement mark on the wafer W. A measurement method using exposure for measuring the position of the sample with a microscope, a measurement method using a slit sensor, a knife edge sensor, or the like may be used.
In the first embodiment, the encoder is used to detect the position of the wafer stage 18 in the Z direction. Instead, an autofocus sensor or the like that detects the position of the wafer W is used. The detection information from the autofocus sensor may be input to the control unit CU.

Next, the telecentricity correction plate 14 arranged on the first reticle conjugate plane K1 will be described in detail. First, the first reticle conjugate plane K1 of the exposure apparatus
, A temporary telecentricity correction plate is arranged. The surface shape of the provisional telecentricity correction plate is an aspherical surface determined to correct the telecentricity correction on the wafer based on the design aberration. Next, while measuring the illuminance uniformity in the exposure area by the illuminance measurement sensor ID arranged on the stage, a part of the optical system is moved in the optical axis direction so that the illuminance uniformity is optimized. Let it.

Here, the illuminance measurement and the illuminance adjustment will be briefly described.
8 (substrate stage) is moved to two-dimensionally move the illuminance measurement sensor ID along the image plane of the projection lens 24 so that the illuminance measurement sensor ID can be moved two-dimensionally within the image plane of the projection lens 24. Is photoelectrically detected by the illuminance measurement system ID.
The photoelectric signal including the illuminance information from the illuminance measurement system ID is input to an illuminance correction calculation unit inside the control unit CU. Thereafter, the illuminance correction calculation unit detects two-dimensional illuminance on the image plane of the projection lens 24, and uses the second illuminance correction optical member as an illuminance correction optical member to make the illuminance on the image plane of the projection lens 24 uniform. The amount of movement of one relay lens 10 is calculated. Then, the illuminance correction calculation unit inside the control unit CU moves the first relay lens 10 along the optical axis direction via the drive system D10. As a result, the exposure area formed on the wafer W as the photosensitive substrate (the image plane of the projection lens 24)
The illumination is corrected so that the illuminance at is uniform.

As described above, when the exposure area (image forming plane of the projection lens 24) formed on the wafer W is adjusted to be uniform, then the telecentricity in the adjusted optical system is adjusted. Is measured by the measurement method described above.
Then, the quality of the telecentricity is determined based on the measured data of the telecentricity. As a result, if the telecentricity is good, it is considered that there is almost no manufacturing error of the exposure apparatus, and the provisional telecentricity correction plate by the design calculation is used as it is as the telecentricity correction plate 14 of the apparatus.

On the other hand, if the value of the telecentricity mirror is unacceptable, it is considered that the manufacturing error of the exposure apparatus is large, and the temporary telecentricity correcting plate is replaced with the optimal telecentricity correcting plate 14. Exchange. The optimal telecentricity correction plate 14 referred to here is a telecentricity correction plate 14 having an optimal aspherical shape. Therefore, a plurality of telecentricity correction plates having different aspherical shapes may be prepared in advance, and an appropriate one may be selected from them, or a temporary correction may be made based on measured telecentricity data. It may be optimized by processing the telecentricity correction plate. In this embodiment, the temporary telecentricity correction plate is an aspherical lens based on design aberrations, but without a design process, a parallel plane plate is used as a temporary telecentricity correction plate. May be used.

Next, a method of manufacturing a telecentricity correction plate as a correction member for correcting a part of the optical characteristics of the illumination optical system will be described with reference to FIG. First, as a first step (a in FIG. 7), for example, when a temporary telecentricity correction plate to be arranged in the illumination optical system shown in FIG. The shape of the correction plate is measured by a known shape measuring device such as an interferometer. The measurement information is recorded on a first recording medium such as a magnetic disk or an optical disk by a recording device attached to the shape measuring device. Here, the temporary telecentricity correction plate may have at least one shape as a correction surface (aspheric surface) that corrects a design error of the illumination optical system, or the illumination optical system may have at least one shape. May simply have a plane in which no design error is taken into account.

Next, the second step (FIG. 7B) will be described. After the first step, the telecentricity correction plate is placed at a predetermined position in the illumination optical system shown in FIG. 1, for example, and the test reticle is held on the reticle stage RS. Then, as described above, by moving the wafer stage 18 via the drive unit 28 and moving the sensor unit 30 two-dimensionally along the image forming plane of the projection lens 24, the imaging of the projection lens 24 is performed. Measure telecentricity at each measurement position on the surface. This measurement result is, as shown in FIG.
Is recorded on a second recording medium such as a magnetic disk or an optical disk. If the illuminance distribution on the image plane of the projection lens 24 is not uniform before measuring the telecentricity at each measurement position on the image plane of the projection lens 24, the illuminance measurement sensor ID Is used to measure the illuminance distribution on the image plane of the projection lens 24, and move some optical members in the illumination optical system, or provide a filter or the like for adjusting the illuminance in the illumination optical system. It is preferable to adjust the illuminance in advance.

Next, the third step (c in FIG. 7) will be described. The first recording medium including information on the result of measurement relating to the shape of the correction plate measured in the first step, and the telephoto at each measurement position on the image plane of the projection lens 24 measured in the second step. The second recording medium including the information on the measurement result of the centricity is set in an arithmetic device such as a computer (not shown) independent of the exposure device shown in FIG. The arithmetic unit includes a reading device that reads information of two recording media, and through the reading device, information of a measurement result regarding a shape of a correction plate recorded on the two recording media and a telecentricity. Information of the measurement result is taken into the arithmetic unit.

The arithmetic unit stores design information such as optical design data of the exposure apparatus shown in FIG. 1 in a storage unit in advance. Then, the arithmetic unit inside the arithmetic unit acquires the design information stored in advance, the information on the shape of the correction plate on the correction surface captured via the first recording medium, and the information via the second recording medium. Ray tracing is performed based on the information on the obtained telecentricity, and an optimal shape of the correction plate that can maintain good telecentricity is calculated. Then, the information on the calculated shape of the correction plate on the correction surface is recorded on a third recording medium such as a magnetic disk or an optical disk by a recording device attached to the arithmetic unit. Here, the calculated correction surface of the correction plate as a correction optical member has an aspherical shape rotationally symmetric with respect to the optical axis of the illumination optical system, and an aspherical shape rotationally asymmetrical with respect to the optical axis of the illumination optical system ( (An aspherical shape randomly undulating).

Next, the fourth step (FIG. 7D) will be described. After passing through the third step, the correction plate is taken out from the lighting device shown in FIG. 1, and based on the shape of the correction surface of the correction plate obtained in the third step, the surface processing on the correction surface of the correction plate is performed. Done. Here, for example, a polishing apparatus as shown in FIG. 8 is used. In FIG. 8, the telecentricity correction plate 14 is mounted on a stage 121 movable in the X and Y directions, and an end of the correction plate 14 is in contact with a pin 121 a of the stage 121. Also, a driving unit 122 that moves the stage 121 along the XY directions.
Are controlled by the control unit 120. Drive unit 12
In order to detect the position in the XY directions when the stage 121 is moved by 2, a detection unit 130 including an encoder, an interferometer, and the like is provided. This detector 1
The detection signal from 30 is transmitted to control section 120.

The polishing plate 123 is provided at one end of a rotary shaft 125 via a holding portion 124, and is configured to be rotatable around the Z direction in the figure. This rotating shaft 12
At the other end of the motor 5, a motor 126 controlled by the control unit 120 is attached. A bearing 127 that rotatably supports the rotation shaft 125 is provided movably along a Z direction with respect to a support portion 128 fixed to a main body (not shown). A motor 129 controlled by the control unit 120 is attached to the support unit 128, and the bearing 127 moves along the Z direction by the action of the motor, and thus the polishing plate 123 moves along the Z direction. .
Note that a sensor (not shown) for detecting the contact pressure between the polishing plate 123 and the telecentricity correction plate 14 is provided on the holding unit 124 that holds the polishing plate 123, and the output from this sensor is provided. Is transmitted to the control unit 120. Further, the control unit 120 reads the information from the third recording medium on which the information on the shape of the correction surface of the correction plate is recorded in the above-described third step.
Is electrically connected to

Here, the operation of the polishing apparatus shown in FIG. 8 will be briefly described. First, information on the shape of the correction surface of the correction plate recorded on the third recording medium is read by the reading device 13.
1 is input into the control unit 120. Control unit 12
0 calculates the amount of processing at each position on the correction surface of the telecentricity correction plate 14 based on the recording information from the third recording medium. And ultimately,
The control unit 120 outputs processing information on the calculated processing amount of the correction plate, an output from a sensor for detecting the contact pressure between the polishing plate 123 and the correction plate, and the stage 121 (or the polishing plate 123) with respect to the position of the polishing plate 123. The control unit controls the driving unit 122, the motor 126, and the motor 129 based on the detection unit 130 that detects the position of the correction plate with respect to the position of (i).

Specifically, the control unit 120 controls the motor 12
6, while rotating the polishing plate 123, the motor 129 is rotated.
The position of the polishing plate 123 in the Z direction is controlled via the. At the same time, the control unit 120 moves the stage 121 two-dimensionally along the XY directions via the drive unit 122.
That is, the polishing plate 123 moves so as to trace the processing surface 14A (surface) of the correction plate along the XY directions. At this time, the processing amount (polishing amount) of the correction plate on the processing surface 14A
Is determined by the contact pressure between the work surface 14A and the polishing plate 123 and the residence time of the polishing plate 123. Therefore, the control unit 12
0 is an appropriate contact between the processing surface 14A and the polishing plate 123 in accordance with the processing amount at each processing position calculated based on the recording information from the third recording medium obtained via the reading device 131. The pressure and the appropriate residence time of the polishing dish 123 are determined.

Next, the fifth step (e in FIG. 7) will be described. An antireflection film is formed on the optical surface of the telecentricity correction plate 14 processed through the fourth step by vapor deposition or the like, and the correction plate is disposed at a predetermined position of the exposure apparatus shown in FIG. As a result, it is possible to satisfactorily correct the telecentricity irregularity in the exposure area (the image plane of the projection lens 24) formed on the wafer W or the illumination area formed on the reticle R. However,
After setting the correction plate at a predetermined position of the exposure apparatus, the wafer W
It is preferable to confirm again using the sensor unit 30 whether or not the telecentricity in the exposure area formed on the reticle R or the illumination area formed on the reticle R has been corrected.

After completing the fifth step, the exposure reticle R on which the exposure pattern is formed is set on the reticle stage RS, and the wafer W as a photosensitive substrate is set on the wafer stage 18. . Then, light for exposure from the light source 2 is illuminated on the reticle R for exposure,
By projecting the illuminated pattern of the reticle R onto the wafer W via the projection lens 24, it is possible to manufacture good semiconductor devices (semiconductor elements, liquid crystal display elements, imaging elements such as CCDs, thin film magnetic heads, etc.). it can. In the above first to fifth steps, a method of manufacturing a correction optical member such as a correction plate for correcting mainly telecentricity irregularity has been described. However, various optical characteristics of the illumination optical system (such as aperture unevenness and various aberrations described later)
Is measured by the sensor unit 30 at least one of
By calculating the shape of the correction optical member that corrects the optical characteristics of the illumination optical system and processing the correction surface of the correction optical member in a manner similar to the above-described first to fifth steps, Optical characteristics can be corrected.

In the above third and fourth steps, it has been described that the shape of the correction surface is determined so that the correction surface of the correction optical member has a predetermined optical action, and the correction surface is processed. In the third step, the distribution of the refractive index is calculated so that the correction surface of the correction optical member has a predetermined deflecting action, and in the fourth step, the distribution of the refractive index is calculated so as to have the predetermined distribution on the correction surface of the correction optical member. It is needless to say that a method of doping a predetermined substance may be used.
Further, when the optical characteristics in the exposure region formed on the wafer W or the illumination region formed on the reticle R are predicted, the shape is slightly different (correction operation on the correction surface is slightly different). A plurality of correction optical members are prepared in advance, for example, an appropriate correction optical member capable of correcting the optical characteristics measured by the sensor unit 30 is selected, and the selected correction optical member is set at a predetermined position in the illumination optical path. You may do it. Further, as will be described in detail in the third embodiment shown in FIG. 5, it is assumed that the optical characteristics in the exposure area formed on the wafer W or the illumination area formed on the reticle R are predicted for each illumination condition. May be configured such that a plurality of correction optical members having different correction effects on the correction surface for each illumination condition can be exchanged with each other.

Next, a method of obtaining the aspherical shape of the telecentricity correction plate will be described with reference to FIG. The aspherical shape is calculated based on measurement data detected using the above-described sensor unit 30 or the like, that is, measurement data of telecentricity irregularity at each image height. Specifically, measured data of telecentricity mura at each image height is, for example, 6 mrad at 100% image height, 4 mrad at 80% image height, 0 mrad at 60% image height, and -2 at 40% image height.
mrad, -1 mrad at image height of 20%, 0 mr at image height of 0%
Suppose it was ad. Further, the magnification of the projection optical system 24 is set to 1
/ 5 and blind relay systems 20a, 20b, 20c
Is 2.5, and the magnification of the second relay lens 15 is 1
And

The position of the telecentricity correction plate 14 is multiplied by the magnification at the position of the telecentricity correction plate 14 with respect to the position on the wafer W to the measured data of the telecentricity correction at each image height. Can be used to determine the telecentricity to be corrected. From the conditions described above, the telecentricity correction plate 14
Is 0.5 times that of the wafer W, and the telecentricity at each image height to be corrected at the position of the telecentricity correction plate 14 is 3 mrad, 2 mra.
d, 0 mrad, -1 mrad, -0.5 mrad, 0
mrad. That is, the telecentricity on the wafer W becomes uniform by causing the telecentricity correction plate 14 to generate telecentricity opposite to the above value.

Here, it is assumed that the telecentricity correction plate 14 is an assembly of prisms having different minute apex angles for each image height. Generally, when the vertex angle of a prism is α and the refractive index is n, the argument δ is obtained by the following equation. δ ≒ α × (n−1) In the above equation, for example, when n = 1.5, when the declination δ is 3 mrad, the apex angle α is about 6 mrad, and when the declination δ is 2 mrad, the apex angle α is about 4 mrad. Becomes In this manner, based on the correction amount, the telecentricity correction plate 14 can be represented by a prism assembly as shown in FIG. Note that in FIG.
The values for image heights other than the image heights described above are represented by the average of the values for the image heights above and below.

FIG. 3B is a diagram in which the apex angles of the prisms at each image height in FIG. 3A are connected to eliminate the step on the incident surface of each prism, and are continuous. FIG. 3 (C)
The incident surface of the prism assembly obtained in FIG. 9B is smoothed (smoothed) by spline interpolation.
Further, the thickness is increased. That is, the shape obtained in FIG. 3C is the aspherical shape of the telecentricity correction plate 14. The method of obtaining the aspherical shape of the telecentricity correction plate 14 described above is nothing less than the method of manufacturing the telecentricity correction plate 14. Then, the telecentricity correction plate 14
Is provided on the first reticle conjugate plane K1 of the above-described exposure apparatus, so that only the telecentricity aberration can be favorably corrected while maintaining the illumination uniformity and the numerical aperture uniformity.

In the first embodiment, the aspherical shape of the telecentricity correction plate 14 is obtained based on the telecentricity measurement data at six image heights. By collecting the measurement data, it is possible to obtain a more accurate aspherical shape of the telecentricity correction plate 14. In the first embodiment,
Although it is assumed that the telecentricity on the wafer W is centrally symmetric, even if the telecentricity is not centrally symmetric, the above-described measurement is performed for an asymmetric location in the exposure region, so that the telecentricity correction plate can be obtained. Fourteen aspherical shapes can be obtained.

In the first embodiment, a wedge-shaped prism is assumed for the sake of simplicity in order to obtain the aspherical shape of the telecentricity correction plate 14. However, in the case of actual processing, etc. The measurement data of Citimura may be directly developed as aspheric coefficients. In the first embodiment, the telecentricity correction plate 14
In order to determine the aspherical shape of, the measurement of the telecentricity of the chief ray alone was performed, but instead, the aspherical shape was determined based on the measurement of the center of gravity of the light beam, or
From the viewpoint of wave optics, an aspherical shape that improves illumination telecentricity in an optimal pattern may be obtained based on telecentricity measurement of patterns having different line widths.

Next, a second embodiment of the exposure apparatus according to the present invention will be described with reference to FIG. The difference between the configuration of the second embodiment and that of the first embodiment is that the illuminance non-uniformity correction plate 13 is provided and that the first relay lens 10 is fixed without being moved for illuminance correction. In the vicinity of the first reticle conjugate plane K1, a telecentricity correction plate 14 is arranged as in the first embodiment. Then, the first relay lens 10 and the telecentricity correction plate 14
The illuminance non-uniformity correction plate 13 is provided between the two. The illuminance unevenness correction plate 13 is formed of a glass plate,
The entrance surface or the exit surface is formed in an aspherical shape.
The illuminance non-uniformity correction plate 13 is a member that corrects illuminance non-uniformity at each position in the exposure region of the exposure light incident on the wafer W. In this case, first, the illuminance unevenness on the wafer W is corrected by the illuminance unevenness correction plate 13, and then the telecentricity correction is corrected by the telecentricity correction plate 14.

The correction method will be described in detail.
As shown in FIG. 1, the illuminance in the exposure area is measured using the illuminance measurement sensor ID provided at one end on the wafer stage 18, and the control unit CU measures the illuminance in the exposure area through the display device 50. Display the result. If the illuminance in the exposure area is not uniform, the illuminance in the exposure area is replaced with another illuminance unevenness correction plate (illuminance correction member). Next, as described in the first embodiment, after setting the test reticle on the reticle stage RS, the sensor unit 30 measures the telecentricity irregularity on the imaging plane of the projection lens 24, and the control unit C
U displays the measurement result of telecentricity in the exposure area through the display device 50. If telecentricity irregularity occurs in the exposure area,
Replace with another correction plate (correction member) that can correct telecentricity in the exposure area.

As described above, in the second embodiment, the telecentricity correction plate 14 is provided on the first reticle conjugate plane K1, and the illuminance unevenness correction plate 13 is provided slightly forward of the first reticle conjugate plane K1. Therefore, the telecentricity and the illuminance uniformity on the wafer W can be corrected efficiently and satisfactorily. In the second embodiment, the illuminance unevenness correction plate 13 is used to correct the illuminance uniformity together with the telecentricity on the wafer W.
If it is desired to correct the above numerical aperture uniformity, a numerical aperture non-uniformity correction plate may be arranged at the position of the illuminance non-uniformity correction plate 13. Also in this case, first, the numerical aperture non-uniformity on the wafer W is corrected by the numerical aperture non-uniformity correction plate, and then the telecentricity correction is performed by the telecentricity correction plate 14.

Next, a third embodiment of the exposure apparatus according to the present invention will be described with reference to FIG. FIG. 5 is a schematic diagram showing an illumination optical system of the exposure apparatus of the third embodiment. The exposure apparatus of the third embodiment differs from the first embodiment only in the configuration of the illumination optical system of the first embodiment. Therefore, the projection optical system is not shown in FIG. In other words, in the third embodiment shown in FIG. 5, since the telecentricity irregularities change for each lighting condition, a plurality of telecentricity correcting plates for correcting the telecentricity irregularities that change according to the change in the lighting conditions. And one of the telecentricity correction plates can be selectively arranged in the illumination light path.

In the illumination optical system of the first embodiment,
The illumination aperture stop arranged in the optical path is an illumination aperture stop 9 (σ variable aperture) having a variable aperture diameter. On the contrary,
In the third embodiment, as illumination condition changing means, two types of illumination aperture stops 9a are used as illumination aperture stops arranged in the optical path by rotating the illumination aperture stop switching device 40.
9b can be selected. As a result, in this apparatus, from among two types of illumination aperture stop,
The illumination conditions can be changed by appropriately selecting the optimal illumination aperture stop. Such an exposure apparatus capable of switching a plurality of illumination means is used as an exposure apparatus for improving resolution and depth of focus.

In this embodiment, two types of illumination means are used. However, the number of types of illumination aperture stops 9a and 9b may be increased so that more various illumination means can be selected. . As typical illumination means, in addition to the normal illumination means in the above-described embodiment, for example, an annular illumination means for illuminating an illumination aperture stop with a ring, or a fourth illumination aperture stop is used. Modified illumination means for improving the depth of focus and resolution of the line and space pattern. On the other hand, in the illumination optical system of the third embodiment, two types of telecentric resizing correction plates 14a are provided as the telecentric resizing correction plates disposed in the optical path by rotating the telecentric resizing correction switching device 41. , 14b can be selected. Note that the two switching devices 40 and 41 are controlled by the control unit CU.

Each of these telecentricity correction plates 14a and 14b is a telecentricity correction plate corresponding to each illumination means by two illumination aperture stops 9a and 9b. That is, the illumination aperture stop switching device 40 causes the illumination aperture stops 9a, 9b
Are switched, the telecentricity correction plates 14a and 14b are switched by the telecentricity correction plate switching device 41 in conjunction with the switching. This is because the degree of influence of the aberration of the illumination optical system and the projection optical system, the characteristics of the light source, and the like differs depending on the illumination means, and the telecentricity differs depending on the illumination means.

As described above, in the third embodiment, the most appropriate telecentricity correction plate 14 is provided in accordance with each illumination means.
Since it has been replaced with a and b, the telecentricity on the wafer W can be corrected in all the illumination means. The illuminance unevenness adjustment in the third embodiment is performed by changing the illumination aperture stop switching device 4 to change the illumination conditions.
A stop having a predetermined aperture shape is disposed in the illumination optical path by 0, and in conjunction with this, a predetermined aperture is corrected by a telecentricity correction plate switching device 41 to correct a telecentricity correction corresponding to each illumination condition. It is preferable that the correction be performed after the correction plate is arranged in the illumination light path.

That is, after the aperture stop and the correction member are set in the illumination optical path, the illuminance in the exposure area is measured using the illuminance measurement sensor ID provided at one end on the wafer stage 18, and the control unit CU operates. It is preferable to move the first relay lens 10 in the optical axis direction via the driving device D50 based on the measurement result of the illuminance in the exposure area.
Also, when an aperture stop having a circular aperture having a different size is changed by the illumination aperture stop switching device 40 in order to change the σ value under normal illumination, the telecentricity may change. Therefore, it is desirable to replace the correction plate for correcting the telecentricity error according to the change in the σ value.

Next, a fourth embodiment of the exposure apparatus according to the present invention will be described with reference to FIG. FIG. 6 is a schematic diagram showing an illumination optical system of the exposure apparatus of the fourth embodiment. In FIG. 6, illustration of the projection optical system is omitted as in the third embodiment. In the fourth embodiment, similarly to the third embodiment, two types of illumination aperture stops 9 are used as illumination aperture stops arranged in the optical path by rotating the illumination aperture stop switching device 40.
a and 9b can be selected. Then, an optimal lighting means can be appropriately selected from the two types of lighting means. On the other hand, in the illumination optical system of the fourth embodiment,
Unlike the third embodiment, the telecentricity correction plate 14 is fixed in the optical path. Then, one of two types of collector lenses 6a and 6b can be selected as a collector lens arranged in the optical path by rotating the collector lens switching device 43. Further, the configuration is such that the parallel flat plate 16 can be attached to and detached from the optical path.

Each of the collector lenses 6a and 6b or the plane parallel plate 16 is provided with two illumination aperture stops 9 respectively.
An optical element capable of correcting the telecentricity on the wafer W together with the telecentricity correction plate 14 corresponding to each of the illumination means a and 9b. That is, when the illumination aperture stops 9a and 9b are switched by the illumination aperture stop switching device 40, the collector lenses 6a and
6b or the attachment and detachment of the plane-parallel plate 16 is performed.
As described above, in the fourth embodiment, the optimum switching of the collector lenses 6a and 6b or the attachment and detachment of the parallel plane plate 16 are performed in accordance with each illumination means. Telecentricity mula can be corrected.

The exposure apparatus according to the above-described embodiment employs a step-and-repeat method for exposing while the reticle and the wafer are stationary, or a step-and-repeat method for exposing while the reticle and the wafer are moved. It is suitable for a scanning stepper, and has two reticle conjugate surfaces. Then, a blind 17 for setting an illumination area on the reticle R is arranged near the second reticle conjugate plane K2 which is one of them. On the other hand, in the case of a proximity exposure apparatus having no blind 17 or an exposure apparatus using an optical system having a fixed field stop, two or more reticle conjugate planes are provided as in this embodiment. There is no need. Therefore, in such an exposure apparatus, one reticle conjugate surface may be provided in the optical path of the illumination optical system, and the telecentricity correction plate 14 may be disposed at that position.

Further, in this embodiment, the telecentricity correction plate 14 is inserted in the vicinity of the reticle conjugate plane, and it is considered that the dust greatly affects the image when dust or the like adheres to the surface of the correction plate. In such a case, the influence of dust and the like can be reduced by adopting a configuration in which the telecentricity correction plate 14 itself is sealed, or by increasing the thickness of the telecentricity correction plate 14 to some extent. it can. The present invention need not be limited to those described in claims 1 to 5, and for example, the following (6) to (6)
As shown in (12).

(6) The illumination optical system has illumination condition changing means for changing illumination conditions for the photosensitive substrate,
The telecentricity correction unit includes a plurality of correction members having correction characteristics different from each other, and one of the plurality of correction members is placed in an illumination light path in response to a change in illumination condition by the illumination condition change unit. 4. The exposure apparatus according to claim 1, wherein the exposure apparatus is set.

(7) In the exposure method using the exposure apparatus according to any one of (1) to (4), a step of illuminating the mask with the illumination optical system, and a step of applying a pattern of the mask to the photosensitive substrate. An exposing step.

(8) In a method of manufacturing an exposure apparatus having an illumination optical system for illuminating exposure light from a light source onto a mask and exposing a pattern of the mask to a photosensitive substrate, the optical characteristics of the illumination optical system may be adjusted. Measuring, determining the configuration of the correction optical unit in accordance with the measured optical characteristics, and setting the correction optical unit in an illumination optical path between the light source and the mask. A method for manufacturing an exposure apparatus, comprising:

(9) The step of determining the configuration of the correction optical means includes a step of obtaining a shape of a correction surface of the correction optical means in accordance with the measured optical characteristics. Of manufacturing an exposure apparatus.

(10) The measuring step includes a step of measuring the telecentricity of the illumination optical system at a number of measurement points on the surface to be irradiated, and a step of determining the shape of the correction surface of the correction optical unit. (9) The method for manufacturing an exposure apparatus according to (9).

(11) In an exposure method for exposing a pattern of the mask to a photosensitive substrate using an illumination optical system for illuminating exposure light from a light source onto a mask, a step of measuring optical characteristics of the illumination optical system; Determining the configuration of the correction optical means according to the measured optical characteristics; setting the correction optical means in an illumination optical path between the light source and the mask; Exposing the reactive substrate to light.

(12) In an exposure method for exposing a pattern of the mask onto a photosensitive substrate using an illumination optical system for illuminating exposure light from a light source onto a mask, a step of measuring optical characteristics of the illumination optical system; A step of selectively setting a correction optical unit in an illumination optical path between the light source and the mask according to the measured optical characteristics, and a step of exposing the pattern of the mask to the photosensitive substrate. An exposure method, comprising:

[0066]

As described above, according to the present invention, since the telecentricity correction plate is disposed near the reticle conjugate plane, the telecentricity on the substrate is maintained while maintaining the illumination uniformity and the numerical aperture uniformity. The city mula can be corrected. Furthermore, by having at least two or more reticle conjugate surfaces in the illumination optical system, it is possible to correct telecentricity irregularities on the substrate while maintaining the function as an exposure apparatus. Further, even for an exposure apparatus having poor telecentricity on a substrate, an exposure apparatus having good telecentricity can be provided by disposing a telecentricity blur correction plate corresponding to the apparatus.

[Brief description of the drawings]

FIG. 1 is a schematic view showing an exposure apparatus according to a first embodiment of the present invention.

FIGS. 2A and 2B are a schematic view showing a sensor unit of the exposure apparatus according to the first embodiment of the present invention, and a view taken along line GG in FIG.

FIG. 3 is a schematic diagram showing a calculated surface shape of a telecentricity correction plate according to the first embodiment of the present invention.

FIG. 4 is a schematic view showing an exposure apparatus according to a second embodiment of the present invention.

FIG. 5 is a schematic diagram showing an illumination optical system of an exposure apparatus according to a third embodiment of the present invention.

FIG. 6 is a schematic diagram showing an illumination optical system of an exposure apparatus according to a fourth embodiment of the present invention.

FIG. 7 is a flowchart illustrating a state of a manufacturing process of the correction member.

FIG. 8 is a schematic diagram illustrating a configuration of a polishing apparatus for processing a correction surface of a correction member.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Elliptical mirror 2 ... Light source 3 ... Mirror 4 ... Shutter 5 ... 2nd focal position 6, 6a, 6b ... Collector lens 7 ... Wavelength selection filter 8 ... Optical
Integrators 9, 9a, 9b Illumination aperture stop 10 First relay lens 13 Illumination unevenness correction plate 14, 14a, 14b Telecentric resizing correction plate 15 Second relay lens 16 Parallel plane plate 17 Blind 18 Wafer stage 20a, 20b, 20c Blind relay system 24 Projection lens 25 Wafer holder 26 Moving mirror 27 Laser interferometer 28 Drive unit 30 Sensor unit 32 Relay lens 33 Image detection sensor 35 Image pickup area 36 Pattern plate pattern 37: Image of reticle mark 40: Illumination aperture stop switching device 41: Telecentric resituation correction plate switching device 43: Collector lens switching device R: Reticle W: Wafer P: Pattern plate K1: First reticle conjugate surface K2 ... Second reticle conjugate plane

Claims (5)

[Claims] 1. An exposure apparatus, comprising: a light source; and an illumination optical system for illuminating a transfer pattern of a mask with illumination light emitted from the light source, and exposing a photosensitive substrate based on light passing through the transfer pattern. And an exposure apparatus, wherein a telecentricity correction unit for correcting the telecentricity of the exposure light incident on the photosensitive substrate is disposed at a position substantially conjugate to the mask in the optical path of the illumination optical system. apparatus. 2. The illumination optical system further comprises a field-of-view limiting means for limiting an illumination area of the mask on the mask side of the telecentricity correction means in an optical path of the illumination optical system. The exposure apparatus according to claim 1, wherein 3. The illumination optical system has at least two positions conjugate with the mask, and the telecentricity correction means is arranged at a conjugate position closer to the light source among the two conjugate positions. 3. The exposure apparatus according to claim 1, further comprising a field-of-view limiting unit that limits an illumination area of the mask at a conjugate position on a side far from the light source. 4. An exposure apparatus, comprising: a light source; and an illumination optical system for illuminating a transfer pattern of a mask with illumination light emitted from the light source, and exposing a photosensitive substrate based on light passing through the transfer pattern. In a method of manufacturing a telecentricity correction member disposed at a position substantially conjugate with the mask in an optical path of the illumination optical system, the telecentricity of the exposure light at each position within an exposure region of the photosensitive substrate may fall. A first step of obtaining an angle; and a second step of converting the tilt angle of the telecentricity into a correction amount at an arrangement position of the telecentricity correction member. Manufacturing method. 5. A method according to claim 4, further comprising a third step of smoothing said correction amount after said second step.