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JP2000174580A - Manufacture of surface acoustic wave element - Google Patents

Manufacture of surface acoustic wave element

Info

Publication number
JP2000174580A
JP2000174580A JP10345204A JP34520498A JP2000174580A JP 2000174580 A JP2000174580 A JP 2000174580A JP 10345204 A JP10345204 A JP 10345204A JP 34520498 A JP34520498 A JP 34520498A JP 2000174580 A JP2000174580 A JP 2000174580A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
cap
piezoelectric film
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10345204A
Other languages
Japanese (ja)
Inventor
Haruo Morii
春雄 森井
Yoshitaka Ikeda
芳隆 池田
Hiromichi Yamada
弘通 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP10345204A priority Critical patent/JP2000174580A/en
Publication of JP2000174580A publication Critical patent/JP2000174580A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/16235Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a manufacture method for a surface acoustic wave element by which a characteristic deterioration caused by an excessive adhesive adhering a cap and an insulation substrate that reaches an upper face of a piezoelectric film is prevented and a small sized surface acoustic wave element can be supplied. SOLUTION: The manufacture method includes a process where an insulation substrate 11 formed with interdigital electrodes 12 and a piezoelectric film 15 in contact with the interdigital electrodes 12 is prepared, a process where a cap 16 to seal the interdigital electrodes 12 formed on the insulation substrate 11 and the piezoelectric film 15 is prepared, a process where a prescribed amount of an adhesive 17 is applied to an adhesion plane of the cap 16 to the insulation substrate 11, and a process where the cap 16 is adhered to the insulation substrate 11.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、絶縁基板上に櫛形
電極および圧電膜を形成し、キャップにより櫛形電極お
よび圧電膜部分を気密封止した弾性表面波素子の製造方
法に関する。
The present invention relates to a method for manufacturing a surface acoustic wave device in which a comb-shaped electrode and a piezoelectric film are formed on an insulating substrate, and the comb-shaped electrode and the piezoelectric film are hermetically sealed with a cap.

【0002】[0002]

【従来の技術】従来の弾性表面波素子の製造方法を説明
する。なお、従来の弾性表面波素子の製造方法を経て得
られた弾性表面波素子の断面図を図3に示す。従来の弾
性表面波素子110の製造においては、まず、ガラスなど
からなる絶縁基板111上に、フォトリソグラフィーによ
ってAlからなる櫛形電極112および外部接続用パッド11
3、さらには櫛形電極112と外部接続用パッド113を接続
する引出電極114を形成する。次に、絶縁基板111上の櫛
形電極112が形成された部分を覆うように、ZnOからなる
圧電膜115をスパッタリングにより形成する。さらに、
櫛形電極112を覆うように形成された圧電膜115周縁にエ
ポキシ樹脂などからなる接着剤117を、スクリーン印刷
により塗布する。その後、アルミナなどからなるキャッ
プ116と絶縁基板111とを接着剤117を介して接着し、櫛
形電極112および圧電膜115部分を気密封止する。
2. Description of the Related Art A conventional method for manufacturing a surface acoustic wave device will be described. FIG. 3 is a cross-sectional view of a surface acoustic wave device obtained through a conventional method of manufacturing a surface acoustic wave device. In manufacturing the conventional surface acoustic wave element 110, first, a comb-shaped electrode 112 made of Al and an external connection pad 11 are formed on an insulating substrate 111 made of glass or the like by photolithography.
Third, an extraction electrode 114 for connecting the comb-shaped electrode 112 and the external connection pad 113 is formed. Next, a piezoelectric film 115 made of ZnO is formed by sputtering so as to cover a portion of the insulating substrate 111 where the comb-shaped electrode 112 is formed. further,
An adhesive 117 made of epoxy resin or the like is applied to the periphery of the piezoelectric film 115 formed so as to cover the comb electrodes 112 by screen printing. After that, the cap 116 made of alumina or the like and the insulating substrate 111 are adhered via the adhesive 117, and the comb-shaped electrode 112 and the piezoelectric film 115 are hermetically sealed.

【0003】このようにして形成された弾性表面波素子
110においては、外部接続用パッド113の部分において絶
縁基板111の上下を貫通するようにスルーホール118が形
成され、スルーホール118内に導体が塗布されている。
こうして、絶縁基板111下面に形成された端子電極119と
絶縁基板111上面の外部接続用パッド113とがスルーホー
ル118により接続され、弾性表面波素子110は、ここでは
図示しない回路基板上の所定の位置に表面実装される。
The surface acoustic wave device thus formed
In 110, a through hole 118 is formed in the portion of the external connection pad 113 so as to penetrate the insulating substrate 111 above and below, and a conductor is applied in the through hole 118.
In this way, the terminal electrodes 119 formed on the lower surface of the insulating substrate 111 and the external connection pads 113 on the upper surface of the insulating substrate 111 are connected by the through holes 118, and the surface acoustic wave element 110 Surface mounted on location.

【0004】[0004]

【発明が解決しようとする課題】従来の弾性表面波素子
の製造方法においては、キャップと絶縁基板とを接着す
るのに用いられる接着剤を、スクリーン印刷により絶縁
基板に塗布していた。しかしながら、現在の技術におい
てスクリーン印刷を用いて接着剤を塗布すると、部分的
に塗布量が多大になるなど、場所によってムラがでるこ
とは回避できない。
In the conventional method of manufacturing a surface acoustic wave device, an adhesive used for bonding a cap and an insulating substrate is applied to the insulating substrate by screen printing. However, when the adhesive is applied by screen printing in the current technology, unevenness due to places cannot be avoided, for example, the applied amount is partially large.

【0005】キャップと絶縁基板を接着する際、接着剤
の塗布量が多大なところにキャップを押しつけると、余
分な接着剤がキャップの内面側・外面側にはみ出す。こ
のとき、スクリーン印刷による接着剤塗布では部分的に
かなりの塗布量になってしまう箇所が出てくるので、キ
ャップの内面側にはみ出た接着剤が、絶縁基板上に形成
された20μm程度の厚みの圧電膜の側面のみならず上面
にまで至る可能性がある。ここで、接着剤が圧電膜の側
面に至るまでならば弾性表面波素子の特性にそれほどの
影響を与えないが、圧電膜の上面にまで至ると弾性表面
波素子の特性が劣化する。具体的には、弾性表面波素子
をフィルタとして用いた場合に、その周波数特性が所望
のものからずれたり、帯域内における損失が大きくなる
などの特性劣化が生じる。
When the cap and the insulating substrate are bonded together, if the cap is pressed against a place where the amount of the adhesive applied is large, excess adhesive will protrude to the inner surface and the outer surface of the cap. At this time, when the adhesive is applied by screen printing, a part of the adhesive may be applied in a considerably large amount, so that the adhesive which has protruded to the inner surface side of the cap has a thickness of about 20 μm formed on the insulating substrate. There is a possibility of reaching not only the side surface but also the upper surface of the piezoelectric film. Here, if the adhesive reaches the side surface of the piezoelectric film, the characteristics of the surface acoustic wave element are not so affected. However, if the adhesive reaches the upper surface of the piezoelectric film, the characteristics of the surface acoustic wave element deteriorate. Specifically, when a surface acoustic wave element is used as a filter, the frequency characteristics thereof are deviated from desired ones, and the characteristics are deteriorated such that the loss in the band is increased.

【0006】このような特性劣化を生じさせないため、
従来の弾性表面波素子の製造方法においては、絶縁基板
に接着剤を塗布する際に、圧電膜から一定の間隔をあけ
てスクリーン印刷により接着剤を塗布していた。しかし
ながら、このような従来の弾性表面波素子の製造方法に
おいては、圧電膜の周縁に、接着剤を原因とするデッド
スペースが必要となり、弾性表面波素子が小型化できな
いという問題があった。
In order not to cause such characteristic deterioration,
In a conventional method of manufacturing a surface acoustic wave element, when applying an adhesive to an insulating substrate, the adhesive is applied by screen printing at a predetermined interval from the piezoelectric film. However, in such a conventional method of manufacturing a surface acoustic wave device, a dead space is required around the periphery of the piezoelectric film due to an adhesive, and there is a problem that the surface acoustic wave device cannot be downsized.

【0007】本発明の弾性表面波素子の製造方法は、上
述の問題を鑑みてなされたものであり、これらの問題を
解決し、接着剤が圧電膜の上面にまで至ることがなく、
かつ弾性表面波素子を小型化できる弾性表面波素子の製
造方法を提供することを目的としている。
The method of manufacturing a surface acoustic wave device according to the present invention has been made in view of the above-mentioned problems, and solves these problems, so that the adhesive does not reach the upper surface of the piezoelectric film.
It is another object of the present invention to provide a method for manufacturing a surface acoustic wave device that can reduce the size of the surface acoustic wave device.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
本発明の弾性表面波素子の製造方法は、櫛形電極および
該櫛形電極に接する圧電膜が形成された絶縁基板を用意
する工程と、前記絶縁基板上に形成された前記櫛形電極
および前記圧電膜部分を封止するためのキャップを用意
する工程と、前記キャップにおける前記絶縁基板との接
着面に所定量の接着剤を転写する工程と、前記キャップ
を前記絶縁基板に接着する工程とを含んでなる。
In order to achieve the above object, a method of manufacturing a surface acoustic wave device according to the present invention comprises the steps of: providing a comb-shaped electrode and an insulating substrate having a piezoelectric film in contact with the comb-shaped electrode; A step of preparing a cap for sealing the comb-shaped electrode and the piezoelectric film portion formed on an insulating substrate, and a step of transferring a predetermined amount of adhesive to an adhesive surface of the cap with the insulating substrate, Bonding the cap to the insulating substrate.

【0009】予め所定の膜厚に形成された接着剤層に、
定められた圧力でキャップを押し当てると、キャップに
は所望の厚みを有する接着剤を転写することが可能とな
る。すなわち、キャップに転写される接着剤量を細かく
コントロールすることができるので、はみ出た接着剤が
圧電膜の上面にまで至る恐れがなくなる。したがって、
圧電膜周縁にデッドスペースを設ける必要が無くなり、
弾性表面波素子を小型化することが可能になる。
An adhesive layer previously formed to a predetermined thickness has
When the cap is pressed with a predetermined pressure, an adhesive having a desired thickness can be transferred to the cap. That is, since the amount of the adhesive transferred to the cap can be finely controlled, there is no possibility that the protruding adhesive reaches the upper surface of the piezoelectric film. Therefore,
There is no need to provide a dead space around the periphery of the piezoelectric film,
The size of the surface acoustic wave element can be reduced.

【0010】また、本発明の請求項2に係る弾性表面波
素子の製造方法は、前記絶縁基板上に形成された前記櫛
形電極上に、前記圧電膜を形成する。これにより、たと
え多少の製造誤差が生じたとしても、櫛形電極に接着剤
がつくことがなくなる。
In a method of manufacturing a surface acoustic wave device according to a second aspect of the present invention, the piezoelectric film is formed on the comb-shaped electrodes formed on the insulating substrate. As a result, the adhesive does not adhere to the comb-shaped electrode even if a slight manufacturing error occurs.

【0011】また、本発明の請求項3に係る弾性表面波
素子の製造方法は、前記圧電膜に接するように短絡電極
を形成する。これにより、弾性表面波素子の特性が良化
する。
Further, in the method of manufacturing a surface acoustic wave device according to a third aspect of the present invention, a short-circuit electrode is formed so as to be in contact with the piezoelectric film. Thereby, the characteristics of the surface acoustic wave element are improved.

【0012】[0012]

【発明の実施の形態】以下、本発明の実施例である弾性
表面波素子の製造方法を説明する。なお、本発明の弾性
表面波素子の製造方法を経て得られた弾性表面波素子の
キャップを取り除いた平面図を図1に、図1におけるX−X
線断面図を図2に示す。本発明の弾性表面波素子10の製
造においては、まず、ガラスなどからなる絶縁基板11上
に、フォトリソグラフィーによってAlからなる互いに対
向する櫛形電極12および外部接続用パッド13、さらには
櫛形電極12と外部接続用パッド13を接続する引出電極14
を形成する。次に、絶縁基板11上の櫛形電極12が形成さ
れた部分を覆うように、ZnOからなる圧電膜15をスパッ
タリングにより形成する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a surface acoustic wave device according to an embodiment of the present invention will be described below. FIG. 1 is a plan view of the surface acoustic wave element obtained through the method of manufacturing a surface acoustic wave element according to the present invention with the cap removed, and FIG.
FIG. 2 shows a cross-sectional view taken along the line. In the manufacture of the surface acoustic wave device 10 of the present invention, first, on an insulating substrate 11 made of glass or the like, a comb-shaped electrode 12 and an external connection pad 13 made of Al by photolithography, Lead electrode 14 for connecting pad 13 for external connection
To form Next, a piezoelectric film 15 made of ZnO is formed by sputtering so as to cover a portion of the insulating substrate 11 where the comb-shaped electrode 12 is formed.

【0013】ここで、一方の面に弾性表面波素子10の櫛
形電極12および圧電膜15の周辺に空間部を形成するため
の凹部を有するアルミナ等からなるキャップ16を用意す
る。そして、予め一定の厚みに形成されたエポキシ樹脂
などからなる接着剤層に、キャップ16における接着面を
一定の圧力で押しつけて、接着剤17をキャップに転写す
る。その後、キャップ16と絶縁基板11とを熱硬化などに
より接着し、櫛形電極12および圧電膜15部分を気密封止
する。
Here, a cap 16 made of alumina or the like having a concave portion for forming a space around the comb-shaped electrode 12 of the surface acoustic wave element 10 and the piezoelectric film 15 on one surface is prepared. Then, the adhesive surface of the cap 16 is pressed against an adhesive layer made of an epoxy resin or the like having a predetermined thickness with a predetermined pressure, and the adhesive 17 is transferred to the cap. After that, the cap 16 and the insulating substrate 11 are bonded by thermosetting or the like, and the comb-shaped electrode 12 and the piezoelectric film 15 are hermetically sealed.

【0014】このようにして形成された弾性表面波素子
10においては、外部接続用パッド13の部分において絶縁
基板11の上下を貫通するようにスルーホール18が形成さ
れ、スルーホール18内に導体が塗布されている。こうし
て、絶縁基板11下面に形成された端子電極19と絶縁基板
11上面の外部接続用パッド13とがスルーホール18により
接続され、弾性表面波素子10は、ここでは図示しない回
路基板上の所定の位置に表面実装される。
The surface acoustic wave device thus formed
In 10, a through hole 18 is formed in the portion of the external connection pad 13 so as to penetrate the insulating substrate 11 above and below, and a conductor is applied in the through hole 18. Thus, the terminal electrode 19 formed on the lower surface of the insulating substrate 11 and the insulating substrate
The external connection pads 13 on the upper surface 11 are connected by through holes 18, and the surface acoustic wave element 10 is surface-mounted at a predetermined position on a circuit board (not shown).

【0015】以上に説明したような弾性表面波素子の製
造方法においては、キャップと絶縁基板とを接着するた
めの接着剤を、転写によりキャップに塗布している。転
写による接着剤の塗布によれば、一定の厚みで接着剤を
キャップに塗布することが可能となるので、従来のスク
リーン印刷により接着剤を塗布したときに生じるよう
な、部分的に接着剤量が多大になることが無くなる。し
たがって、はみ出た接着剤が圧電膜の側面にまで至るの
みで、圧電膜の上面にまで至ることが無くなり、弾性表
面波素子の特性劣化を防ぐことができる。また同時に、
はみ出た接着剤が圧電膜の上面にまで至らないようにす
ることを考慮して、圧電膜周縁にデッドスペースを設け
る必要が無くなるので、弾性表面波素子を小型化するこ
とができる。
In the method of manufacturing a surface acoustic wave device as described above, an adhesive for bonding the cap and the insulating substrate is applied to the cap by transfer. By applying the adhesive by transfer, it is possible to apply the adhesive to the cap with a constant thickness, so that the amount of the adhesive, such as occurs when applying the adhesive by conventional screen printing, is partially increased. Will not be enormous. Therefore, the protruding adhesive only reaches the side surface of the piezoelectric film and does not reach the upper surface of the piezoelectric film, so that deterioration of the characteristics of the surface acoustic wave element can be prevented. At the same time,
In consideration of preventing the protruding adhesive from reaching the upper surface of the piezoelectric film, there is no need to provide a dead space around the periphery of the piezoelectric film, so that the surface acoustic wave element can be downsized.

【0016】なお、本実施例においては単一の弾性表面
波素子を製造する製造方法を説明したが、大きめの絶縁
基板上に複数個分の櫛形電極や圧電膜を形成し、キャッ
プを接着した後に、ダイシングにより個々の弾性表面波
素子に切り分ける製造方法を用いても構わない。また、
本発明は絶縁基板にサファイア基板を用いたものや、圧
電膜上に短絡電極を形成した弾性表面波素子にも適用で
きる。さらに、本実施例においては絶縁基板上に櫛形電
極を形成し、櫛形電極上に圧電膜を形成した弾性表面波
素子を用いて説明したが、絶縁基板上に圧電膜を形成
し、圧電膜上に櫛形電極を形成した弾性表面波素子にも
本発明は適用できる。さらにまた、本発明の弾性表面波
素子の製造方法を用いて、フィルタのみならず共用器な
ども製造することが可能である。
In this embodiment, the manufacturing method for manufacturing a single surface acoustic wave device has been described. However, a plurality of comb-shaped electrodes or piezoelectric films are formed on a large insulating substrate, and the cap is bonded. After that, a manufacturing method in which individual surface acoustic wave elements are separated by dicing may be used. Also,
The present invention can be applied to a device using a sapphire substrate as an insulating substrate and a surface acoustic wave device having a short-circuit electrode formed on a piezoelectric film. Further, in the present embodiment, the description has been made using a surface acoustic wave element in which a comb-shaped electrode is formed on an insulating substrate and a piezoelectric film is formed on the comb-shaped electrode. The present invention can also be applied to a surface acoustic wave device having a comb electrode formed thereon. Furthermore, not only a filter but also a duplexer can be manufactured by using the method for manufacturing a surface acoustic wave element of the present invention.

【0017】[0017]

【発明の効果】以上のように本発明によれば、圧電膜で
覆われた櫛形電極部分にキャップを被せる弾性表面波素
子において、キャップに接着剤を転写して、キャップと
絶縁基板とを接着する弾性表面波素子の製造方法を用い
た。これにより、キャップに塗布される接着剤の量をコ
ントロールすることが可能となり、圧電膜上面にまで接
着剤が至ることが無くなる。したがって、弾性表面波素
子の特性劣化もなくなり、さらにデッドスペースもなく
なるので小型化可能な弾性表面波素子を提供することが
できる。
As described above, according to the present invention, in a surface acoustic wave device in which a cap is placed on a comb-shaped electrode portion covered with a piezoelectric film, an adhesive is transferred to the cap, and the cap and the insulating substrate are bonded. A method of manufacturing a surface acoustic wave device is described. Thus, the amount of the adhesive applied to the cap can be controlled, and the adhesive does not reach the upper surface of the piezoelectric film. Therefore, deterioration of the characteristics of the surface acoustic wave element is eliminated, and a dead space is eliminated, so that it is possible to provide a surface acoustic wave element that can be downsized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の弾性表面波素子の製造方法により得ら
れる弾性表面波素子のキャップを取り除いた平面図であ
る。
FIG. 1 is a plan view of a surface acoustic wave device obtained by a method of manufacturing a surface acoustic wave device according to the present invention, from which a cap is removed.

【図2】図1におけるX−X線断面図である。FIG. 2 is a sectional view taken along line XX in FIG.

【図3】従来の弾性表面波素子の製造方法により得られ
る弾性表面波素子の断面図である。
FIG. 3 is a cross-sectional view of a surface acoustic wave device obtained by a conventional method for manufacturing a surface acoustic wave device.

【符号の説明】[Explanation of symbols]

10 弾性表面波素子 11 絶縁基板 12 櫛形電極 13 外部接続用パッド 14 引出電極 15 圧電膜 16 キャップ 17 接着剤 18 スルーホール 19 端子電極 10 Surface acoustic wave element 11 Insulating substrate 12 Comb electrode 13 External connection pad 14 Leader electrode 15 Piezoelectric film 16 Cap 17 Adhesive 18 Through hole 19 Terminal electrode

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5J097 AA24 AA29 AA34 BB11 DD01 FF02 HA02 HA03 HA04 HA07 HA08 HA09 JJ01 JJ06 KK10 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J097 AA24 AA29 AA34 BB11 DD01 FF02 HA02 HA03 HA04 HA07 HA08 HA09 JJ01 JJ06 KK10

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】櫛形電極および該櫛形電極に接する圧電膜
が形成された絶縁基板を用意する工程と、前記絶縁基板
上に形成された前記櫛形電極および前記圧電膜部分を封
止するためのキャップを用意する工程と、前記キャップ
における前記絶縁基板との接着面に所定量の接着剤を転
写する工程と、前記キャップを前記絶縁基板に接着する
工程とを含んでなることを特徴とする弾性表面波素子の
製造方法。
A step of preparing an insulating substrate on which a comb-shaped electrode and a piezoelectric film in contact with the comb-shaped electrode are formed; and a cap for sealing the comb-shaped electrode and the piezoelectric film portion formed on the insulating substrate. An elastic surface, comprising: transferring a predetermined amount of an adhesive to a surface of the cap to be bonded to the insulating substrate; and bonding the cap to the insulating substrate. Method of manufacturing wave element.
【請求項2】前記絶縁基板上に形成された前記櫛形電極
上に、前記圧電膜を形成することを特徴とする請求項1
記載の弾性表面波素子の製造方法。
2. The piezoelectric film is formed on the comb-shaped electrode formed on the insulating substrate.
A manufacturing method of the surface acoustic wave device according to the above.
【請求項3】前記圧電膜に接するように短絡電極を形成
することを特徴とする請求項1または2記載の弾性表面波
素子の製造方法。
3. The method for manufacturing a surface acoustic wave device according to claim 1, wherein a short-circuit electrode is formed so as to be in contact with said piezoelectric film.
JP10345204A 1998-12-04 1998-12-04 Manufacture of surface acoustic wave element Pending JP2000174580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10345204A JP2000174580A (en) 1998-12-04 1998-12-04 Manufacture of surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10345204A JP2000174580A (en) 1998-12-04 1998-12-04 Manufacture of surface acoustic wave element

Publications (1)

Publication Number Publication Date
JP2000174580A true JP2000174580A (en) 2000-06-23

Family

ID=18375011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10345204A Pending JP2000174580A (en) 1998-12-04 1998-12-04 Manufacture of surface acoustic wave element

Country Status (1)

Country Link
JP (1) JP2000174580A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663142B1 (en) * 2001-03-30 2007-01-02 후지쓰 메디아 데바이스 가부시키가이샤 Surface acoustic wave device
KR100964719B1 (en) 2008-08-19 2010-06-21 (주)와이솔 A saw package having a wafer level seal and a method of manufacturing the same
JP4697232B2 (en) * 2006-01-11 2011-06-08 株式会社村田製作所 Method for manufacturing surface acoustic wave device and surface acoustic wave device
CN114614785A (en) * 2022-03-25 2022-06-10 开拓晶体科技(中山)有限公司 Bridging process for surface acoustic wave device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663142B1 (en) * 2001-03-30 2007-01-02 후지쓰 메디아 데바이스 가부시키가이샤 Surface acoustic wave device
JP4697232B2 (en) * 2006-01-11 2011-06-08 株式会社村田製作所 Method for manufacturing surface acoustic wave device and surface acoustic wave device
KR100964719B1 (en) 2008-08-19 2010-06-21 (주)와이솔 A saw package having a wafer level seal and a method of manufacturing the same
CN114614785A (en) * 2022-03-25 2022-06-10 开拓晶体科技(中山)有限公司 Bridging process for surface acoustic wave device

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