JP2000164868A - Gate film formation method and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for forming a gate film, wherein when a nitrogen is implanted in a silicon substrate for suppressing an oxidation speed, the thickness of oxide film formed by the oxidation process can be made smaller with good controllability. SOLUTION: In a thermal process within a rapid thermal process furnace, wherein an ion comprising nitrogen element is implanted into a semiconductor substrate before its thin insulating film is formed on the substrate, a step wherein relatively hot and very short (1-several seconds) annealing process is performed in a nitrogen, argon, or other inert gas atmospheres, and a step wherein a desired insulating film is formed in a short thermal process in oxidizing gas, nitriding/oxidizing gas, or nitriding gas atmosphere, are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a technique for forming an oxide film, a nitrided oxide film or a nitride film.

[0002]

2. Description of the Related Art How to form a gate insulating film, which is the heart of a semiconductor device, with high reliability and high controllability is the most important issue in semiconductor device development. Under such circumstances, a recent logic MIS (Metal Insul)
In an attor semiconductor (metal-insulator-semiconductor) type device, the thickness of a gate insulating film of a transistor is rapidly reduced, and an oxide film having a thickness of 3.0 nm or less is used. At the research stage, about 1.
The study of ultra-thin films of 5 nm is underway.

[0003] Under such circumstances, how to form a silicon oxide film, which has been conventionally used as a gate insulating film, in a very thin film with good control while maintaining good insulating properties and interface characteristics. New challenges are emerging. One of the methods for forming such an extremely thin oxide film is to lower the oxidation temperature.

However, the reduction in temperature is a completely opposite stance to the formation of an oxide film having good reliability, and there is a demand to oxidize at a high temperature. As one of the methods satisfying the demand, a method of implanting nitrogen atoms into a silicon substrate has been proposed. This is a method of forming a gate film using a phenomenon in which a Si—N bond is generated during oxidation to suppress diffusion of an oxidizing species, and the oxidation rate is reduced (prior art). The Si—N bond formed by the conventional gate film forming method also has the effect of suppressing the diffusion of boron from the gate electrode,
This is a very popular method.

FIG. 8 shows the difference in oxidation rate between when nitrogen is injected into a substrate and when nitrogen is not injected into a substrate in a conventional gate film forming method. The horizontal axis represents the oxidation temperature (unit: [° C.]), and the vertical axis represents the thickness of the oxide film (unit: [nm]). The introduction of a nitrogen atom has an acceleration energy of about 10 KeV,
The dose is 3 × 10 14 atoms / cm 2, and the oxidation is performed in a dry oxygen atmosphere at about 900 ° C. using a rapid heat treatment furnace. FIG. 8 shows that the oxidation rate was suppressed by nitrogen implantation. However, a close observation shows that the oxidation rate is certainly slow at a time of 5 seconds or more and a film thickness of about 1.5 nm or more, but there is almost no difference in the area below that, and the oxidation rate is rather increased. You can see that it is done. In this case, this method cannot be used for forming an oxide film having a thickness of about 1.5 nm or less. However, as I did some research, I noticed the disadvantages of this method.

FIG. 9 shows a sequence of an oxidation treatment by a rapid heat treatment furnace in a conventional gate film forming method. After injecting nitrogen under the above conditions, the wafer (silicon substrate) is introduced into the chamber at room temperature in a nitrogen gas,
Thereafter, the temperature is increased to about 900 ° C. at a rate of 125 ° C./sec and oxidized in oxygen gas for a desired time. In general,
Normally, no heat treatment is applied between the implantation of the nitrogen atoms and the oxidation, and the oxidation treatment is simply carried out by one.
It can be seen that the heat treatment is performed in the step.

[0007]

However, in the conventional gate film forming method, nitrogen ions implanted into the silicon substrate are not activated as they are,
There is no bond with the silicon element (Si-N). In addition, the silicon substrate itself is in an amorphous state due to damage due to ion implantation. In addition, the oxidation is S
This is a reaction in which i and oxygen are combined, and oxidation is more apt to occur in a state where the bond is amorphous and the bond is broken than in a crystal state where a Si-Si bond is firmly formed. As a result, in such a state, there is a problem that the same phenomenon (oxidation) occurs as when a normal silicon substrate is oxidized, and conversely, there is a problem that the oxidation is accelerated.

The present invention has been made in view of such a problem, and an object of the present invention is to reduce the rate of oxidation by injecting nitrogen into a silicon substrate. An object of the present invention is to provide a gate film forming method and a semiconductor device for reducing the thickness of an oxide film to be formed with good controllability.

[0009]

According to a first aspect of the present invention, there is provided a method of forming a gate oxide film containing nitrogen, comprising implanting ions containing a nitrogen element into a silicon substrate. Then, when performing a rapid heat treatment step to form a very thin thermal oxide film on the silicon substrate, the ion-implanted silicon substrate is annealed at a high temperature for about 1 to several seconds in an inert gas atmosphere, Activating the implanted ionized nitrogen element to generate a bond between the silicon element in the silicon substrate and the nitrogen atom,
A gate film, comprising: a high-temperature annealing process for recrystallizing the silicon substrate; and an oxidation process for performing a heat treatment for a predetermined short time in an oxidizing atmosphere to form a desired insulating film. It depends on the forming method. The gist of claim 2 of the present invention is a method of forming a gate nitrided oxide film containing nitrogen, the method comprising: implanting ions containing a nitrogen element into a silicon substrate; When performing a rapid heat treatment process to form a very thin nitrided oxide film, the ion-implanted silicon substrate is annealed at a high temperature for about 1 to several seconds in an inert gas atmosphere, and the implanted ion-implanted nitrogen element is removed. A high-temperature annealing step of generating a bond between the silicon element in the silicon substrate and the nitrogen atom to recrystallize the silicon substrate, and performing a heat treatment for a predetermined short time in a nitriding-oxidizing atmosphere. And an oxidizing step of forming a desired insulating film by executing the method. According to a third aspect of the present invention, there is provided a gate film forming method for forming a gate nitride film containing nitrogen, the method comprising: implanting ions containing a nitrogen element into a silicon substrate; When performing a rapid heat treatment process to form a thin nitride film on the substrate, the ion-implanted silicon substrate is annealed at a high temperature for about 1 to several seconds in an inert gas atmosphere to activate the implanted ionized nitrogen element. A high-temperature annealing process for generating a bond between the silicon element and the nitrogen atom in the silicon substrate and recrystallizing the silicon substrate, and performing a heat treatment for a predetermined short time in a nitriding atmosphere. An oxidation treatment step of forming an insulating film having a predetermined thickness. The gist of claim 4 of the present invention is that the high-temperature annealing step is continuously performed immediately before the oxidation step. A method for forming a film. The gist of claim 5 of the present invention is that the high-temperature annealing step includes the step of performing the ion-implanted silicon substrate in an inert gas atmosphere for about 100 hours.
Annealing at 0 ° C. for about 1 to several seconds at a high temperature activates the implanted ionized nitrogen element, generates a bond between the silicon element in the silicon substrate and the nitrogen atom, and recrystallizes the silicon substrate. 5. The method according to claim 1, further comprising the step of: The gist of claim 6 of the present invention is that the predetermined thickness of the insulating film formed in the oxidation treatment step is from sub-nanometer to several nanometers. A method for forming a film. The gist of claim 7 of the present invention is that the ion implantation including a nitrogen element is implanted into a silicon substrate, and then the nitrogen is formed by a rapid heat treatment process to form a very thin thermal oxide film on the silicon substrate. A semiconductor device having a gate oxide film of a predetermined thickness containing
The surface of the silicon substrate has a silicon-element bond exhibiting crystallinity, and ions including a nitrogen element are implanted into the silicon substrate. Thereafter, a gate oxide film having a predetermined thickness formed on the silicon substrate is subjected to the implantation. The present invention resides in a semiconductor device characterized in that the obtained nitrogen element has a silicon element-nitrogen element bond bonded to the silicon element. The gist of claim 8 of the present invention resides in the semiconductor device according to claim 7, wherein the predetermined thickness of the gate oxide film is from sub-nanometer to several nanometers.

[0010]

Embodiments of the present invention will be described below in detail with reference to the drawings. First, the basic concept of each embodiment of the gate film forming method of the present invention will be described. A feature of each of the following embodiments is a method for forming a gate oxide film containing nitrogen, a gate nitrided oxide film, or a gate nitride film, wherein the semiconductor substrate includes an ion containing nitrogen element (N). In a heat treatment step in a rapid heat treatment furnace for forming these thin insulating films on the substrate after that, first, in a nitrogen, argon or other inert gas atmosphere, a relatively high temperature and very high temperature are required. A short annealing time (1 to several seconds) and a step of forming a desired insulating film by a short-time heat treatment in an atmosphere of an oxidizing gas, a nitriding oxide gas, or a nitriding gas. And, more preferably, to perform both steps continuously.

According to such a gate film forming method, the implanted nitrogen atoms are activated by the high temperature annealing in an inert gas atmosphere for a very short time in the first half, and partially bonded to the silicon element (Si). (Si-N bond). Due to the presence of the bond, in the oxidation step, the nitridation oxidation step or the nitridation step performed later, the reaction between the oxidizing species, the nitriding oxide species or the nitriding species and the silicon substrate is suppressed,
The diffusion of the reactive species by the oxidizing species, the nitriding species or the nitriding species and the silicon substrate is also suppressed, and the initial reaction rate (oxidation rate, nitridation oxidation rate or nitriding rate) becomes very slow.
As a result, it is possible to form an extremely thin insulating film, and it is possible to obtain an effect that the controllability of film formation is improved.
The effect that the oxidation rate, the nitridation oxidation rate, or the nitridation rate is reduced leads to the effect that the processing temperature of the oxidation step, the nitridation oxidation step, or the nitridation step itself can be set high. Since the reliability of the insulating film formed by such a process increases as the temperature increases, the effect of this improvement is great. Further, since the inert atmosphere annealing is performed for a very short time, the roughness (roughness) of the silicon surface is not increased, and impurities such as boron and phosphorus already implanted into the silicon substrate are diffused. There is also an advantage that redistribution can be suppressed.

(First Embodiment) FIG. 1 is a temperature profile of a rapid heat treatment for explaining a first embodiment of a gate film forming method of the present invention. For example, a rapid heat treatment furnace is used to perform extremely short-time annealing and oxide film formation on a silicon substrate into which nitrogen ions having a mass number of 14 (element symbol: N) have been implanted at an acceleration energy of about 10 KeV and a dose of 3 × 10 14 atoms / cm 2. At this time, the process sequence (temperature, gas, time) is shown. In this case, both steps are performed continuously in the same chamber.

First, a silicon wafer is introduced into a furnace for rapid heat treatment at room temperature in a nitrogen atmosphere. A nitrogen gas is flowed into the chamber for a certain period of time in order to remove atmospheric components mixed into the chamber when the silicon wafer is introduced. here,
It is desirable to flow a total of a nitrogen gas having a capacity of at least 10 times the internal volume of the chamber. For example, if the chamber volume is 2 L (liter), it is necessary to introduce nitrogen gas at a flow rate of about 10 L per minute for 12 seconds or more.

Next, after sufficiently removing the atmosphere (oxygen or moisture) from the chamber, as shown in the temperature profile of FIG. 1, the nitrogen gas N2 (or the argon gas A) is left as it is.
r) In the atmosphere, the temperature is raised to about 1000 ° C. at a rate of 125 ° C. to 400 ° C. per second (temperature rising rate). And after holding about 1000 ° C for about 1 to several seconds,
The lamp heater for raising the temperature is turned off (extinguished), and rapid cooling is performed in the nitrogen gas (or argon gas) atmosphere. Usually, if the pre-heat treatment is performed at about 1000 ° C. for several seconds, it is cooled to a temperature of 300-400 ° C. in only 10-30 seconds. In this state, the gas is switched from nitrogen gas to oxygen gas (O2) (or NO gas). In order to sufficiently replace the gas with oxygen gas (or NO gas), oxygen gas having a capacity of 10 times or more the internal volume of the chamber is required as in the case of replacing the atmosphere.

Next, the temperature is raised to a desired oxidation temperature (temperature rising rate of 125 ° C./sec) in this atmosphere state, and an oxide film is formed by heat treatment at a constant temperature. After a predetermined time, the atmosphere is switched to nitrogen gas (or argon gas) and rapid cooling to room temperature is performed.

Here, the feature of the present invention resides in that a very short time high-temperature annealing treatment in an inert gas atmosphere is performed immediately before the oxidation treatment. This processing changes the form of the nitrogen element introduced into the silicon substrate.

FIG. 2 is a schematic cross-sectional view of a silicon substrate for explaining the difference in the structure depending on the presence or absence of annealing.
FIG. 3A is a schematic cross-sectional view of a silicon substrate when nitrogen is only introduced into a silicon substrate, and FIG. 3B is a diagram when heat treatment is performed after nitrogen is introduced into the silicon substrate. FIG. 2 is a schematic cross-sectional view of the silicon substrate of FIG.
If nitrogen is simply introduced into the silicon substrate, it is possible to obtain the structure shown in FIG.
As shown in FIG. 2, nitrogen is not only located between the lattices of the Si--Si bond of the silicon crystal, but the Si--Si bond itself is severely cut by damage due to implantation. In this state, it can no longer be said to be a crystal, but a so-called amorphous state.

On the other hand, by performing a heat treatment after introducing nitrogen into the silicon substrate, as shown in FIG. 2B, the Si is rearranged, the Si--Si bond is restored, the crystal is again formed, and the implantation is performed. The nitrogen element thus bonded combines with the Si atom to form a Si—N bond. This ultra-short time high-temperature treatment is performed at a high temperature (about 900 ° C. or higher).
Since it is sufficient for the formation of the -N bond and is not for a long time, the diffusion (redistribution) of impurities (including an implanted nitrogen element such as boron and phosphorus) in the silicon substrate can be suppressed.

If heat treatment is performed in an oxidizing atmosphere in each state, the oxidation rate will be different due to the bonding state of the Si surface shown in FIG. 2 and the influence of the Si—N bond. FIG.
This is a result of examining the effect of the presence or absence of ultra-short annealing on the oxidation rate, and shows the oxidation rate. The horizontal axis is the oxidation time (unit is [s]), and the vertical axis is the oxide film thickness (unit is [nm]).
It is. The case with annealing is indicated by ●, and the case without annealing is plotted by △. Nitrogen implantation is performed at an acceleration energy of about 10 KeV and a dose of about 3 × 10 14 at.
ms / cm2 and oxidation at about 900 ° C with dry oxygen 1
The test was performed in an atmosphere of 00%. Ultra-short processing time is about 10
00 ° C. for 2 seconds. From FIG. 3, when the ultra-short annealing is not performed (indicated by ■ in the figure), an oxidation time of about 1.2 seconds
Although an oxide film having a thickness of nm is formed, it can be seen that the film thickness after annealing (indicated by ● in the figure) is reduced to about 0.7 nm. Then, in the subsequent time, the film thickness is thinner than that of the non-annealed film, affected by the initial film thickness.

The thermal oxidation is a reaction in which a bond between a Si—Si substrate is broken, and oxygen atoms enter between them to form a Si—O—Si bond. Therefore, the crystalline state is less likely to be oxidized than the amorphous state in which the bond is broken. In addition, the Si—N bond is more firm to break, and the bond has the effect of suppressing the diffusion of oxygen, which is an oxidizing species. For the above reasons, the oxidation rate is suppressed by the presence or absence of the ultra-short time high-temperature annealing.

As described above, according to the first embodiment, an extremely thin oxide film (strictly speaking, since the oxide film contains Si-N bonded by mixing nitrogen atoms, it can also be referred to as an "nitride oxide film"). Can be formed. In the first to fourth embodiments, it is possible to form an extremely thin film of 1.0 nm, and if the thickness of the oxide film is about 1.5 nm, the oxidation time is about 20 seconds and the controllability is considerably improved. I can judge.

The effect of annealing is not limited to that the atmosphere is nitrogen. The same can be achieved with any inert gas. Argon gas (Ar), helium (He), and the like are more inert than nitrogen, and the influence of annealing on the surface is further reduced. In addition, although an example using dry oxygen as the oxidation has been described, it is understood that the effects of the present invention are not impaired even by oxidation using water vapor or nitrogen gas passed through water by burning oxygen and hydrogen.
It is clear from the principle.

(Second Embodiment) A method for forming a nitrided oxide film according to this embodiment will be described below. Although oxidation is described in the first embodiment, the effect of suppressing the growth rate of the insulating film after the ultra-short time high-temperature annealing can be similarly observed in the formation of the nitrided oxide film. For example, it is conceivable to use NO gas for heat treatment for film formation after ultra-short annealing. NO
As the gas, nitridation by nitrogen and oxidation by oxygen occur simultaneously, and it is already well known as a gas for forming a nitrided oxide film. FIG. 4 shows the result of examining the film forming speed of the nitrided oxide film. The horizontal axis indicates the annealing time (unit: [second]) in the NO gas atmosphere, and the vertical axis indicates the thickness of the nitrided oxide film (unit: [nm]). The case with annealing is indicated by ●,
The case without annealing is plotted with ■. Similar to the case shown in FIG. 3, it can be confirmed that the ultra-short high-temperature annealing reduces the initial film thickness and that the entire film can be formed thin. And comparing with FIG.
It can be seen that the growth rate was further suppressed. This is because Si-
It can be interpreted that N-bonds are formed and oxidation is less likely to occur.

The reaction gas involved in the formation of the nitrided oxide film is not limited to NO gas. The present embodiment is effective in any gas atmosphere in which a nitrided oxide film can be formed, such as a N2O gas, a NO2 gas, a mixed gas of NO and oxygen, and a mixed gas of N2O, oxygen, and NO.

(Third Embodiment) In the present embodiment, it is added that the present invention is also effective for forming a nitride film using a nitriding gas instead of a gas for nitriding oxidation. An amorphous silicon substrate also has an effect of promoting nitridation and cannot form a thin film. However, when crystallized by ultra-short high-temperature annealing, the nitridation rate is suppressed. Further, in this case, a pure nitride film can be formed. In other words, if the surface is active against oxidation, an oxide film is formed by oxygen that is slightly mixed in during nitridation, and it is impossible to form a pure nitride film. Appears, it becomes possible to form a thin gate insulating film using only the nitride film itself. This allows the production of very thin insulating films. That is, when realizing an extremely thin oxide film equivalent film, it is more advantageous to form only a nitride film having a large relative dielectric constant than to mix an oxide film having a relatively low dielectric constant.

(Fourth Embodiment) The above-described first to third embodiments are embodiments in which a process of performing ultra-short-time high-temperature annealing and a subsequent oxidation, nitridation, or nitridation process are continuously performed. However, the effects of the present invention can be realized by separately performing these two processes. That is, FIG.
As shown in the figure, only the ultra-short time high temperature annealing process (indicated as Process 1 in the figure) is performed, and the oxidation, nitridation or nitridation process (Pro
cess2), a thin insulating film similar to that in a continuous process can be formed with good control.

In order to obtain the effects of the present invention, the film thickness, manufacturing conditions, and numerical values of each component in the first to fourth embodiments are not limited to the above.

Hereinafter, the effects of the first to fourth embodiments will be described. The first to fourth embodiments have an effect that an oxide film, a nitrided oxide film, and a nitride film having a thickness of about 1.5 nm or less can be formed with good control. As described in the first to fourth embodiments, it has been almost impossible to form an oxide film having a thickness of 1.2 nm or less in the related art. However, the first to fourth embodiments have sufficient controllability. An oxide film having a thickness of 0.8 to 1.0 nm can be formed as it is. Further, in the case of a nitrided oxide film and a nitride film, a thinner insulating film (0.6 to 1.0 nm and 0.3 to 0.8 nm, respectively, in terms of the oxide film thickness) can be formed. .

In other words, heat treatment such as oxidation can be performed at a higher temperature by utilizing the effect of slowing the growth rate, and a highly reliable thin film can be formed.

FIG. 6 is a graph showing the result of examining the effect of the presence or absence of nitrogen on the oxidation rate, and is a graph showing the oxidation rate. The horizontal axis indicates the oxidation time (unit is [second]), and the vertical axis indicates the thickness of the oxide film (unit is [nm]). The case with nitrogen injection is indicated by ●, and the case without nitrogen injection is plotted by ■. For example, as shown in FIG. 6, when the ultra-short time high-temperature annealing is not performed, 1.8 n at about 900 ° C. for 10 seconds.
Although an oxide film of m is formed, if an ultra-short high-temperature annealing is performed in advance, a temperature of 952 ° C. may be set to form an oxide film of 1.8 nm in 10 seconds. In general, in any of the oxidation, nitridation, and nitridation processes, a film formed at a high temperature forms a denser film and improves electrical reliability. In fact, when the reliability life of the TDDB characteristic is performed on the oxide film formed under the above two conditions, a clear difference can be seen. FIG. 7 shows one example of the result, and is a result of examining a time required until an oxide film (thickness: 1.8 nm) is broken by applying a constant electric stress (−5 V stress). The vertical axis is a value obtained by Weibull plotting the cumulative failure rate (the unit is [Weibull]), and the horizontal axis is the destruction time and the number of measurement chips is 40 each. The curve plotted by (2) shows the case where the oxidation temperature is 900 ° C., and the curve plotted by ● shows the case where the oxidation temperature is 952 ° C. It is determined that the longer the breakdown time is, the higher the reliability is (i.e., the closer to the right of the plot).

Another advantage is that ultra-short time high temperature annealing does not damage the silicon surface. When the high-temperature annealing is performed for a long time, the profile of the impurities in the silicon substrate changes, or the roughness of the silicon surface is increased. However, in the ultra-short processing of 1 to several seconds used in the present invention, the The occurrence of such adverse effects can be suppressed.

The number, position, shape, and the like of the above-mentioned constituent members are not limited to those in the above-described embodiment, but may be any number, position, shape, and the like suitable for carrying out the present invention. In each drawing, the same components are denoted by the same reference numerals.

[0033]

According to the present invention, an oxide film, a nitrided oxide film and a nitride film having a thickness of about 1.5 nm or less can be formed with good control. Conventionally, it has been almost impossible to form an oxide film having a thickness of 1.2 nm or less.
An oxide film having a thickness of 1.0 nm can be formed. Oxide nitride film,
In the case of a nitride film, it is even thinner (approximately 0.6 to 1.0 nm or 0.3
(〜0.8 nm) An insulating film can be formed.

In other words, heat treatment such as oxidation can be performed at a higher temperature by utilizing the effect of reducing the growth rate, and a highly reliable thin film can be formed.

Further, in any of the oxidation, nitridation and oxidation processes, a film formed at a high temperature forms a denser film and improves electrical reliability.

Another advantage is that ultra-short time high temperature annealing does not damage the silicon surface. When the high-temperature annealing is performed for a long time, the profile of the impurities in the silicon substrate changes, or the roughness of the silicon surface is increased. However, in the ultra-short processing of 1 to several seconds used in the present invention, the The occurrence of such adverse effects can be suppressed.

[Brief description of the drawings]

FIG. 1 is a temperature profile of a rapid heat treatment for explaining a first embodiment of a gate film forming method of the present invention.

FIG. 2 is a schematic sectional view of a silicon substrate for explaining a difference in structure depending on the presence or absence of annealing, and FIG.
FIG. 2 is a schematic cross-sectional view of a silicon substrate when nitrogen is only introduced into the silicon substrate, and FIG. 2B is a cross-sectional view of the silicon substrate when heat treatment is performed after nitrogen is introduced into the silicon substrate. It is a structure schematic diagram.

FIG. 3 is a graph showing the results of examining the effect of the presence or absence of ultra-short time annealing on the oxidation rate, and showing the oxidation rate.

FIG. 4 is a graph showing a result of examining a film forming speed of a nitrided oxide film.

FIG. 5A is a temperature profile of a process for performing ultra-short high-temperature annealing, and FIG. 5B is a temperature profile for performing an oxidation, nitridation, or nitridation process using another apparatus. It is.

FIG. 6 is a graph showing the results of examining the effect of the presence or absence of nitrogen injection on the oxidation rate, and showing the oxidation rate.

FIG. 7 is a TDDB characteristic diagram obtained by examining a time required until an oxide film is broken by applying a constant electric stress (−5 V).

FIG. 8 is a graph showing a difference in oxidation rate between when nitrogen is injected into a substrate and when nitrogen is not injected into a substrate in a conventional gate film forming method.

FIG. 9 shows a sequence of an oxidation treatment by a rapid heat treatment furnace in a conventional gate film forming method.

Claims (8)

[Claims] 1. A method for forming a gate oxide film containing nitrogen, comprising implanting ions containing a nitrogen element into a silicon substrate, and thereafter forming a very thin thermal oxide film on the silicon substrate. In order to perform a rapid heat treatment process, the ion-implanted silicon substrate is annealed at a high temperature for about 1 to several seconds in an inert gas atmosphere to activate the implanted ionized nitrogen element, A high-temperature annealing step of generating a bond between the silicon element and the nitrogen atom to recrystallize the silicon substrate; and performing a heat treatment for a predetermined short time in an oxidizing atmosphere to form a desired insulating film. A method for forming a gate film, comprising: an oxidation treatment step. 2. A method for forming a gate nitrided oxide film containing nitrogen, comprising implanting ions containing a nitrogen element into a silicon substrate, and thereafter forming a very thin nitrided oxide film on the silicon substrate. When performing a rapid heat treatment step for annealing, the ion-implanted silicon substrate is annealed at a high temperature for about 1 to several seconds in an inert gas atmosphere to activate the implanted ionized nitrogen element, A high-temperature annealing step of generating a bond between the silicon element and the nitrogen atom to recrystallize the silicon substrate, and performing a heat treatment for a predetermined short time in a nitridizing and oxidizing atmosphere to form a desired insulating film. Forming an oxidation treatment step. 3. A method for forming a gate nitride film containing nitrogen, the method comprising: implanting ions containing a nitrogen element into a silicon substrate; and thereafter forming a very thin nitride film on the silicon substrate. When performing the rapid thermal processing step, the ion-implanted silicon substrate is annealed at a high temperature for about 1 to several seconds in an inert gas atmosphere to activate the implanted ionized nitrogen element, A high-temperature annealing process for generating a bond between the element and the nitrogen atom to recrystallize the silicon substrate; and performing a heat treatment for a predetermined short time in a nitriding atmosphere to form an insulating film having a predetermined thickness. A method of forming a gate film, comprising: 4. The gate film forming method according to claim 1, wherein the high-temperature annealing process is continuously performed immediately before the oxidation process. 5. The high-temperature annealing step includes annealing the ion-implanted silicon substrate at a temperature of about 1000 ° C. for about 1 to several seconds in an inert gas atmosphere to activate the implanted ionized nitrogen element. 5. The gate according to claim 1, further comprising: generating a bond between a silicon element in the silicon substrate and the nitrogen atom to recrystallize the silicon substrate. 6. Film formation method. 6. The method according to claim 5, wherein the predetermined thickness of the insulating film formed in the oxidizing process is from sub-nanometer to several nanometers. 7. A gate of a predetermined thickness containing nitrogen, which is formed by implanting ions containing a nitrogen element into a silicon substrate and then forming a very thin thermal oxide film on the silicon substrate by a rapid heat treatment process. A semiconductor device having an oxide film, wherein the surface of the silicon substrate has a bond between silicon elements exhibiting crystallinity, ions containing a nitrogen element are implanted into the silicon substrate, and then a predetermined number of ions are formed on the silicon substrate. A semiconductor device, wherein the gate oxide film having a thickness has a silicon element-nitrogen element bond in which the implanted nitrogen element is combined with a silicon element. 8. The semiconductor device according to claim 7, wherein the predetermined thickness of the gate oxide film is from sub-nanometer to several nanometers.