JP2000028933A - Array type optical modulation element, array type exposure element, plane display device, and method for driving array type optical modulation element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase the speed without using laser light which increases the equipment cost, to increase the degrees of freedom of design of an optical modulation part, and to realize variable contrast control for every picture element even in the case that each optical modulation part is in the binary mode. SOLUTION: With respect to an array type optical modulation element 35 where optical modulation parts 33 having flexible thin films 27 are arranged one-dimensionally or two-dimensionally and flexible thin films 27 are deformed by an electrostatic stress so as to change the transmittance of light passing the flexible thin films 27, each of areas (m) into which one picture element S is divided is provided with the optical modulation part 33.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an array type light modulating element for changing light transmittance using a flexible thin film, and to an exposure of an ultraviolet light sensitive material, a visible light sensitive material, an infrared light sensitive material and the like. The present invention relates to an array-type exposure element, a flat-panel display in which phosphors are displayed by the array-type light modulation element, and a method of driving the array-type light modulation element.

[0002]

2. Description of the Related Art Conventionally, digital exposure methods used in various image forming processes include a method using a laser beam, a method using a UV light source and an LCD shutter, and a method using a UV light source and an electro-optical crystal shutter. is there.

[0003] In the apparatus using laser light, continuous exposure is performed by, for example, raster scanning in which an image forming body and a laser beam are relatively moved. In this method, a fine image can be formed using its own image generating function.

[0004] In a device using a UV light source and an LCD shutter, exposure is controlled by selectively blocking ultraviolet rays by utilizing a change in optical properties of the LCD shutter caused by a change in arrangement of molecules due to an electric field. .

A device using a UV light source and an electro-optic crystal shutter utilizes a primary electro-optic effect of an electro-optic crystal in which a change in refractive index is proportional to the first power of an applied electric field. As this electro-optical crystal shutter, for example, there is a Pockels cell. The Pockels cell cuts out a plane-parallel plate of electro-optic crystal perpendicular to the optical axis, applies an electric field in the direction of the optical axis, and controls exposure using birefringence generated when ultraviolet light is transmitted in this direction.

Various types of thin flat display devices have been conventionally proposed, and typical ones are, for example, a liquid crystal display device, a plasma display device, and a field emission display (FED).

[0007] The liquid crystal display device has a structure in which oriented liquid crystal is inserted between a pair of substrates on which a conductive transparent film is formed, sealed, and sandwiched by orthogonal polarizing plates. Display by a liquid crystal display device is performed by applying a voltage to the conductive transparent film to orient the liquid crystal molecules perpendicular to the substrate and changing the transmittance of light from the backlight. An active matrix liquid crystal panel using a TFT (thin film transistor) is used to provide full-color display and compatibility with moving images.

In a plasma display device, a large number of regularly arranged orthogonal electrodes corresponding to an anode and a cathode are arranged between two glass plates filled with a rare gas such as neon, and an intersection of each counter electrode is provided. Is a unit pixel.
In the display by the plasma display device, based on image information, a voltage is selectively applied to opposing electrodes that specify each intersection, thereby causing the intersection to discharge and emit light, and the generated ultraviolet light to excite the phosphor. Do it.

The FED has a structure as a flat display tube in which a pair of panels are arranged to face each other with a small space therebetween, and the periphery of these panels is sealed. A fluorescent film is provided on the inner surface of the panel on the display surface side, and field emission cathodes are arranged on the back panel for each unit light emitting region. The field emission cathode is
It has a field-emission microcathode in the shape of a conical protrusion called a micro-sized emitter tip. The display by the FED is performed by extracting electrons using an emitter tip and irradiating the electrons with the accelerated phosphor to excite the phosphor.

[0010]

However, the above-described light modulation element, exposure element, and flat panel display have various problems described below. That is, in the case of using a laser beam, there is a disadvantage that the size of the device is increased and the cost of the device is increased. Further, since the exposure is performed by scanning with a laser beam, the entire surface of the image forming body cannot be exposed, and it is difficult to form a multi-channel, and it is difficult to perform high-speed exposure. In the case of using a UV light source and an LCD shutter, a plurality of transmission elements constituting the LCD shutter are transmitted, so that the light use efficiency is lowered and the durability of the LCD shutter against ultraviolet rays is low. Those using a UV light source and an electro-optic crystal shutter have a high driving voltage and an ADP (NH ₄
H ₂ PO _4), for creating an electro-optic crystal shutters cut out crystals such as KDP (KH ₂ PO _4), there is a problem two dimensional array of it is difficult.

Further, the above-described flat panel display devices have various problems described below. That is, in the liquid crystal display device,
Since the light from the backlight is transmitted through multiple layers of the polarizing plate, the transparent electrode, and the color filter, there is a problem that the light use efficiency is reduced. In addition, the high-quality type has a drawback that a TFT is required, and liquid crystal must be injected between two substrates and aligned, which makes it difficult to increase the area. Furthermore, since light is transmitted through the aligned liquid crystal molecules, the viewing angle becomes narrow. The plasma display device requires the formation of partition walls for generating plasma for each pixel and a high degree of vacuum sealing, which has the disadvantage of increasing the manufacturing cost and increasing the weight. Further, since a large number of electrodes corresponding to the anode and the cathode must be regularly arranged for each unit pixel, the number of electrodes is increased, and it is difficult to obtain a high-definition and high-brightness image.
Further, there is a disadvantage that the driving voltage is high and the driving IC is expensive. In the FED, it is necessary to make the inside of the panel a high vacuum in order to stabilize the discharge with high efficiency, and there is a drawback that the manufacturing cost becomes high similarly to the plasma display device. In addition, since the field-emitted electrons are accelerated to irradiate the phosphor, a high voltage is required.

Further, as shown in FIG. 20, there is an optical modulation element in which a support 3 is provided on a substrate 1 and a flexible thin film 5 parallel to the substrate 1 is provided on an upper end of the support 3. Flexible thin film 5
A light shielding film 7 is formed thereon. On the substrate 1 and the light shielding film 7
The transparent electrodes 9a and 9b are formed so as to face each other.

The light modulation element 11 includes transparent electrodes 9a, 9
By applying a voltage to b, as shown in FIG.
Displacement of the flexible thin film 5 by electrostatic stress (electromechanical operation)
Thus, the light from the UV plane light source can be modulated.

Conventionally, this type of light modulating element 11 is configured such that one pixel corresponds to one modulating section. Therefore, as the pixel size increases, it is necessary to relatively increase the size of the modulation section. For example, in a display with an angle of 10 inches, a pixel size of VGA resolution (640 × 480 pixels) is about 300 μm × 300 μm. Therefore, in the structure of the light modulation element 11 described above, the height of the support is 300 μm.
This necessitates the above, making it difficult to manufacture by a thin film process. In addition, the applied voltage for bending the flexible thin film is increased, causing a problem that the load on the drive circuit is increased. Furthermore,
Since the required displacement is large, there has been a problem that the response time becomes long, the speed cannot be sufficiently increased, and the life of the material is shortened due to an increase in stress. In addition to this,
In the value modulation mode, multi-gradation was difficult.

When the flexible thin film is deformed or elastically restored by an electrostatic force, the relationship between the applied voltage Vgs and the displacement of the flexible thin film shows a hysteresis characteristic. Accordingly, the relationship between the applied voltage Vgs and the light transmittance T also shows a hysteresis characteristic as shown in FIG. According to the hysteresis characteristic, when the light modulation element is in the OFF (light blocking) state, the OFF state is maintained when Vgs is equal to or lower than Vth (L), and Vg is maintained.
When s becomes equal to or higher than Vth (H), the ON state is maintained. And
The light modulating element keeps the ON state when Vgs is equal to or higher than Vth (H), and saturates to the OFF state when Vgs becomes equal to or lower than Vs (L). When the polarity of Vgs is negative, the characteristic has a positive polarity and is symmetric with respect to the vertical axis.

In the case of exhibiting such hysteresis characteristics, the next operation is affected by the state of the flexible thin film before the writing is performed. It is desirable to perform a reset operation, that is, a once-balanced state (OFF state), and then perform a write operation so as to obtain a desired transmittance. However, if the reset operation is simply performed before the write operation, the scanning time per row becomes longer, the number of rows in the matrix cannot be increased, and the driving method for obtaining gray scales by time division requires And the number of gradations cannot be increased.

Therefore, it is conceivable to obtain a high-speed response by increasing the rigidity of the flexible portion of the light modulation element. However, on the other hand, the load on the drive circuit increases due to an increase in the drive voltage, resulting in low cost and low cost. This can be a factor that hinders miniaturization.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a first object of the present invention is to use a laser beam, which increases the cost of the apparatus, to increase the speed, and to design a light modulator. An object of the present invention is to provide an array-type light modulation element, an array-type exposure element, and a flat display having a high degree of freedom.

A second object is to provide a method of driving an array-type light modulation element which can control multiple gradations in units of one pixel even when each light modulation unit is in a binary mode. To provide.

It is a third object of the present invention to provide a method for driving an array-type light modulation element which can obtain a stable operation even if the light modulation element itself has a hysteresis characteristic.

[0021]

According to a first aspect of the present invention, there is provided an array-type light modulation device, wherein a light modulation section having a flexible thin film is arranged one-dimensionally or two-dimensionally. In an array-type light modulation element in which a flexible thin film is deformed by electrostatic stress to change light transmittance, the light modulation unit is provided in each of a plurality of divided regions of one pixel.

In this array type light modulating element, since the light modulating portions are provided in each of the regions obtained by dividing one pixel into a plurality, each light modulating portion can be formed small. By reducing the size of the light modulating section, the thin film process is facilitated. In particular, in the case of a mechanism for performing light modulation by bending a flexible thin film, the applied voltage can be reduced by reducing the size. In addition, since the required displacement of the flexible thin film is reduced, the response time is shortened, and the speed can be increased.

According to a second aspect of the present invention, in the array type exposure element, a plurality of the light modulation sections provided in respective regions of the one pixel are connected by a common electrode, and the operation of each light modulation section in one pixel is controlled. It is characterized by being equal.

In this array type light modulating element, each light modulating section in one pixel operates in common, and one pixel can be operated by an aggregate of small light modulating sections.

According to a third aspect of the present invention, in the array type exposure element, a plurality of the light modulating portions provided in respective regions of the one pixel are connected by different electrodes, and the operation of each light modulating portion in one pixel is different. It is characterized by the following.

In this array type light modulating element, the operation of each light modulating section in one pixel is different from each other. Gradation operation becomes possible.

According to a fourth aspect of the present invention, in the array type light modulating device, the one pixel is divided into regions having different areas.

In this array type light modulating element, by setting each area obtained by dividing one pixel to have a different area, even if the number of divisions is the same, a larger number of floors can be obtained as compared with the case where the area is divided by the same area. You can get the key.

According to a fifth aspect of the present invention, there is provided an array type light modulating element, wherein each pixel is arranged in a simple matrix structure.

In this array type light modulating element, the size and speed of the light modulating section in a simple matrix structure can be reduced.

An array type light modulation device according to a sixth aspect is characterized in that the pixels are arranged in an active matrix structure to which active elements are added.

In this array type light modulating element, the size and speed of the light modulating section in the active matrix structure can be reduced.

According to a seventh aspect of the present invention, there is provided an array-type exposure element comprising: the array-type light modulation element according to any one of the first to sixth aspects; and a planar light source arranged to face the array-type light modulation element. And the light emitted from the planar light source is light-modulated by the array-type light modulation element.

In this array type exposure device, light emitted from a plane light source is light-modulated by an array type light modulation device. And, as described above, the array type light modulation element
A light modulation unit is provided in each of a plurality of divided regions of one pixel. This makes it possible to form an array type exposure element in which individual light modulating portions are reduced. Further, the applied voltage for exposure control is reduced, and the response time for exposure control is shortened, so that high-speed exposure can be performed.

An array-type exposure element according to claim 8, wherein the array-type light modulation element according to any one of claims 1 to 6, and a planar light source arranged to face the array-type light modulation element; A phosphor provided on the opposite side of the planar light source with the array-type light modulation element interposed therebetween, and the light emitted from the array-type light modulation element is wavelength-converted into visible light or infrared light by the phosphor. It is characterized by the following.

In this array type exposure element, light emitted from a plane light source is light-modulated by an array type light modulation element, and the light is converted into visible light or infrared light by a phosphor. Therefore, in the array type exposure device for visible light or infrared light, the size of the light modulation unit can be reduced, the exposure control voltage can be reduced, and the exposure can be speeded up as described above.

An array-type exposure device according to a ninth aspect is characterized in that the flat light source is an ultraviolet light emitting light source.

In this array type exposure element, exposure of an ultraviolet light-sensitive material, or exposure of a visible light-sensitive material or infrared light-sensitive material by exciting a fluorescent material, and light emission by exciting a fluorescent material Display becomes possible.

According to a tenth aspect of the present invention, there is provided a flat display, wherein the array type light modulating element according to any one of the first to sixth aspects, a flat light source arranged to face the array type light modulating element, and the array And a phosphor provided on the opposite side of the planar light source with the pattern-type light modulation element interposed therebetween, and the phosphor is illuminated and displayed by light emitted from the array-type light modulation element.

In this flat display, light emitted from the flat light source is light-modulated by the array-type light modulation element, and the light causes the phosphor to emit light. Therefore, in the flat panel display, it is possible to reduce the size of the light modulation unit, reduce the display control voltage, and increase the display speed.

The flat display according to claim 11 is
The flat light source is an ultraviolet emission light source.

In this flat-panel display, exposure of an ultraviolet light-sensitive material, or exposure of a visible light-sensitive material or infrared light-sensitive material by exciting a phosphor, and light emission display by exciting a phosphor are performed. Becomes possible.

According to a twelfth aspect of the present invention, there is provided a method of driving an array-type light modulation element according to any one of the first to eleventh aspects, wherein one pixel is divided into a plurality of pixels. In the region, the light modulating unit is provided, a plurality of the light modulating units are connected by different electrodes, each light modulating unit is operated differently, and gradation control is performed by changing a transmitted light amount per pixel. It is characterized by.

In the method of driving the array type light modulation element,
The light modulators provided in the respective regions obtained by dividing one pixel are operated differently. As a result, the amount of transmitted light per pixel becomes variable, and multi-tone operation can be performed with one pixel.

According to a thirteenth aspect of the present invention, in the driving method of the array type light modulation element, the one pixel is divided into regions having different areas and driven.

In this method of driving the array type light modulation element,
As compared with the case where the same light modulation units provided in a plurality of regions divided by the same area are combined and driven, even if the number of divisions is the same, a driving method in which more gray scales can be obtained.

According to a fourteenth aspect of the present invention, in the driving method of the array type light modulation element, the light modulation section is driven by a simple matrix.

In the method of driving the array type light modulation element,
By driving the light modulation section with a simple matrix structure having a small size, it is possible to increase the number of gradations of one pixel.

According to a fifteenth aspect of the present invention, in the method of driving an array type light modulation element, the light modulation section is driven by an active matrix.

In this method of driving the array type light modulation element,
By driving the light modulation section with an active matrix structure having a reduced size, it is possible to increase the number of gradations of one pixel.

The driving method of an array-type light modulating element according to claim 16 is the method of driving an array-type light modulating element according to any one of claims 1 to 15, wherein the light modulating element is an electrostatic modulating element. A light scanning is performed by performing a light modulation by a displacement operation of a flexible thin film by force and an elastic return operation of the flexible thin film, and after a reset scan for performing an elastic return operation of the light modulation element, a write operation for selecting a displacement operation or a state maintenance. Is performed.

In the method of driving the array type light modulation element,
After the reset scan of the light modulation element, by performing a write scan that selects the displacement operation or state maintenance of the element, the state before the write scan is prevented from affecting the next operation due to the hysteresis characteristics of the element, Stable writing scanning can be performed. Further, the two-dimensional light modulation array having the simple matrix configuration is not inconsistent with the hysteresis characteristics of the elements, that is, the pixels on the non-selected scanning lines are surely maintained in the ON / OFF state set at the time of the writing scanning. It becomes possible to drive.

According to a seventeenth aspect of the present invention, there is provided the driving method of the array type light modulating element according to the sixth or fifteenth aspect, wherein the light modulating element is flexible by electrostatic force. Light modulation is performed by a displacement operation of the thin film and an elastic return operation of the flexible thin film, and a writing scan for applying a desired voltage to the light modulation element is performed.

In the method of driving the array type light modulation element,
By performing a write scan to apply a desired voltage to the light modulation element, each element that operates linearly with respect to the applied voltage without having a hysteresis characteristic can be used for each light modulation element having an active matrix structure without reset operation. It can be driven stably.

The driving method of an array-type light modulation element according to claim 18 is the method for driving an array-type light modulation element according to claim 6 or claim 15, wherein the light modulation element is flexible due to electrostatic force. Light modulation is performed by a displacement operation of the thin film and an elastic return operation of the flexible thin film, and a write scan is performed by applying a desired voltage after applying a reset signal for performing a return operation of the light modulation element. I do.

In this method of driving the array type light modulation element,
By performing a write scan in which a desired voltage is applied to the light modulation element after the reset signal is applied, a state before the write scan is prevented from affecting the next operation due to a hysteresis characteristic of the element, and a stable write scan is performed. It can be performed. Also, due to the hysteresis characteristics of the element,
It is possible to drive the two-dimensional light modulation array having the active matrix configuration without contradiction, that is, to ensure that the pixels on the non-selected scanning lines maintain the ON / OFF state set during the writing scan.

[0057]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of an array-type light modulation device, an array-type exposure device, a flat-panel display, and a method of driving an array-type light modulation device according to the present invention will be described below in detail with reference to the drawings. Will be described. FIG. 1 is a cross-sectional view of a first embodiment of an array-type light modulation element according to the present invention, and FIG. 2 is a cross-sectional view illustrating an operation state of the array-type light modulation element shown in FIG.

A plurality of substrate-side transparent electrodes 23 transparent to ultraviolet rays are provided on a substrate 21 transparent to ultraviolet rays. Each substrate-side transparent electrode 23 is provided on the substrate 21.
In response to this, an insulating support 25 is provided in the vicinity thereof. One end of a flexible thin film 27 parallel to the substrate 21 is fixed to the upper end of the support 25. The flexible thin film 27 has a cantilever shape by fixing one end to the column 25.

The flexible thin film 27 has a light shielding film 2 of substantially the same area.
9 is attached. Further, on the flexible thin film 27, a film-side transparent electrode 31 transparent to ultraviolet rays is formed. The film-side transparent electrode 31 is opposed to the substrate-side transparent electrode 23.

The light-shielding film 29 and the film-side transparent electrode 31 may be shared. In this case, the light shielding film 29 is formed of a conductive material that absorbs or reflects ultraviolet light. More specifically, it can be used for metal thin films such as aluminum and chromium that reflect ultraviolet light, single structures made of semiconductors such as polysilicon that absorb ultraviolet light, insulating films such as silicon oxide and silicon nitride, and semiconductor thin films such as polysilicon. A configuration in which a metal is deposited or a composite configuration in which a filter such as a dielectric multilayer film is deposited can be employed.

The substrate-side transparent electrode 23, the support 25, the flexible thin film 27, the light-shielding film 29, and the film-side transparent electrode 31 constitute one light modulation section 33. The light modulating section 33 includes the substrate 21
Above is arranged in one or two dimensions. Light modulator 33
Is a region m obtained by dividing the region S of one pixel into a plurality of regions.
It is provided for each. That is, one pixel includes a plurality of light modulators 3
3.

The light modulators 33 provided in the respective regions m are provided for each pixel so that the substrate-side transparent electrodes 23 are
The film-side transparent electrodes 31 are commonly connected.
That is, the light modulators 33 in one pixel operate equally.

The array type light modulating element 35 having the light modulating section 33 thus configured is arranged on a flat light source (not shown). When no voltage is applied between the substrate-side transparent electrode 23 and the film-side transparent electrode 31, the flexible thin film 27 faces the substrate 21 in parallel. Therefore, as shown in FIG. 1, the ultraviolet light transmitted through the substrate-side transparent electrode 23 is absorbed or reflected by the light shielding film 29.

On the other hand, when a voltage is applied between the transparent electrode 23 on the substrate side and the transparent electrode 31 on the film side, as shown in FIG.
Move to the side and become folded. That is, the light shielding film 2
9 no longer blocks light. Light modulator 33 in one pixel
Since the substrate-side transparent electrodes 23 and the film-side transparent electrodes 31 are commonly connected to each other, each light modulation unit operates equally in one pixel. As a result, the ultraviolet light transmitted through the substrate 21 and the substrate-side transparent electrode 23 travels further forward and is emitted from the light modulator 33. When the voltage is reduced to zero again, the flexible thin film 27 returns to the original position shown in FIG. 1 by the elastic force.

As described above, the array type light modulating element 35
A region S of one pixel is divided into a plurality of regions m, and a light modulation unit 33 is provided in each region m. Then, the substrate-side transparent electrodes 23 and the film-side transparent electrodes 31 of the respective light modulation sections 33 in one pixel are commonly connected.
Thereby, each light modulating section 33 can be formed small.

For example, if the pixel size of the panel is about 300
In the case of μm × 300 μm, one pixel is divided vertically into 10
When the light is divided into 100 light modulating units 33, the size of each light modulating unit 33 can be relatively reduced to 1/10 or less.

As described above, when the size of the light modulator 33 can be reduced, the following various effects can be obtained.
That is, since one pixel is divided into a plurality of regions and the light modulation unit 33 is reduced accordingly, the degree of freedom in designing the light modulation unit can be increased. In the case of the above example, the height of the support 25 is 30 μm.
And the thin film process becomes easy. When the support 25 is formed, normal RIE etching can be sufficiently performed after the film formation. Since the film thickness becomes thin,
Throughput is improved, and costs can be reduced. The applied voltage for bending the flexible thin film 27 is reduced. Thereby, the cost of the driving circuit can be reduced. Since the required displacement of the flexible thin film 27 can be reduced, the response time can be shortened, and the fatigue can be reduced to extend the life.

This array type light modulation element 35 can be used as a main part of an array type exposure element. This array type exposure element is configured by arranging a plane light source (not shown) facing the array type light modulation element 35. As the flat light source, for example, a light source that emits ultraviolet light is used. Thereby, the ultraviolet light emitted from the planar light source is light-modulated by the array-type light modulation element 35, and the ultraviolet-sensitive material can be exposed.

The array-type light modulation element 35 can be used as a main part of an array-type exposure element for exposing a visible light-sensitive material and an infrared light-sensitive material. In this array type exposure element, a plane light source (not shown) is arranged to face the array type light modulation element 35, and a phosphor (not shown) is provided on the opposite side of the plane light source with the array type light modulation element 35 interposed therebetween. In the array-type exposure element configured as described above, the wavelength of light emitted from the array-type light modulation element 35 is converted into visible light or infrared light by a phosphor, and the visible light-sensitive material and the infrared light-sensitive material are exposed. can do.

Further, the array type light modulation device 35 can be used for a main part of a flat type display. In this flat-panel display, a flat light source (not shown) is arranged to face the array-type light modulation element 35, and the array-type light modulation element 3
A phosphor (not shown) is provided on the opposite side of the flat light source with respect to 5.
In the flat-panel display configured as described above, it is possible to cause the phosphor to emit light by the light emitted from the array-type light modulation element 35. Therefore, a desired image can be formed by applying a voltage based on image information to the light modulation unit 33 for each pixel.

Next, a second embodiment of the present invention will be described.
FIG. 3 is a plan view showing the second embodiment, and FIG.
5 is a cross-sectional view, FIG. 5 is a plan view illustrating the operation state of the light modulation unit shown in FIG. 3, FIG. 6 is a cross-sectional view of FIG. 5, and FIG. 7 is a plurality of light modulation units shown in FIG. It is a top view of the formed array type light modulation element.

On a substrate 37 transparent to ultraviolet rays, a pair of parallel columns 39 is provided so as to protrude. Between the pair of columns 39, two pairs of opposing electrodes 41, 41 having a length substantially half the distance between the columns 39 are arranged side by side in the left and right columns 39. A light-shielding film 43 that covers the substrate 37 is formed between one counter electrode 41. That is, the substrate 37 is provided with the light shielding film 4.
The portion where 3 is formed becomes the non-opening portion 45, and the portion where the light shielding film 43 is not formed becomes the opening portion 47. Therefore, light transmitted through the substrate 37 is emitted only from the opening 47.

An electrode light shielding plate 49 having a length substantially half the distance between the columns 39 is provided in a space facing the two pairs of opposed electrodes 41, 41.
Is provided. The electrode light-shielding plate 49 is supported on the left and right columns 39 via flexible members (for example, polygonal springs) 51 on both sides. The electrode light-shielding plate 49 is configured to move in parallel to be biased toward one of the left and right counter electrodes 41 by elastically deforming the polygonal spring 51.

The substrate 37, the light-shielding film 43, the columns 39, the opposing electrodes 41, 41, the electrode light-shielding plate 49, and the polygonal spring 51 constitute an optical modulator 53. This light modulation unit 53 is provided in FIG.
As shown in (2), they are arranged on the substrate 37, for example, two-dimensionally. The light modulation unit 53 is provided for each of the regions m obtained by dividing the region S of one pixel into a plurality. That is, one pixel is
It is constituted by a plurality of light modulation units 53.

The light modulating section 53 provided in each region m is provided for each pixel so that the opposing electrodes 41 are connected to each other.
The electrode light shielding plates 49 are commonly connected. That is, the light modulation units 53 in one pixel operate equally.

The array type light modulating element 55 having the light modulating section 53 thus configured is arranged on a flat light source (not shown). Then, zero voltage is applied to the electrode light shielding plate 49,
When a voltage is applied only to the counter electrode 41 on the opening 47 side,
The electrode light shielding plate 49 moves to the opening 47 side due to the electrostatic stress, as shown in FIGS. 5A and 6A. As a result, light that is going to pass through the opening 47 is blocked by the electrode light blocking plate 49.

On the other hand, when a voltage of + V is applied to the electrode light-shielding plate 49 and a voltage is applied only to the counter electrode 41 on the opening 47 side, the electrode light-shielding plate 49 is caused by electrostatic stress.
(B), as shown in FIG. 6 (b), it moves to the light shielding film 43 side. Thus, the light that has passed through the opening 47 is emitted from the light modulator 53. Light modulator 5 in one pixel
In No. 3, since the opposing electrodes 41 and 41 and the electrode light-shielding plates 49 are commonly connected, each light modulation unit 53 operates equally in one pixel. Then, when the voltage is reduced to zero again, the electrode light shielding plate 49 returns to the original position by the elastic force of the broken wire spring 51 and the electrostatic stress.

As described above, the array type optical modulation element 55
A region S of one pixel is divided into a plurality of regions m, and a light modulation unit 53 is provided in each region m. Then, the opposing electrodes 41, 41 of each light modulating unit 53 and the electrode light shielding plates 49 in one pixel are commonly connected. Thereby, each light modulating section 53 can be formed small.

As a result, the above-mentioned array type light modulating element 35
The following effects similar to those described above can be obtained. That is, (1) the thin film process becomes easy. (2) Normal RIE etching becomes possible. (3) The thickness of the film is reduced, and the cost can be reduced. (4) The applied voltage is reduced, and the cost of the driving circuit can be reduced. (5) The response time can be shortened and the service life can be prolonged.

The array-type light modulation element 55 can also constitute an array-type exposure element and a flat display in the same manner as in the case of the array-type light modulation element 35 described above.

Next, a third embodiment of the present invention will be described.
FIG. 8 is a plan view showing the third embodiment, and FIG. 9 is BB of FIG.
FIG. 10 is a cross-sectional view taken along the line CC of FIG. 8, and FIG. 11 is a cross-sectional view illustrating the operation state of the exposure device shown in FIG.

A dielectric multilayer mirror 59 is provided on a substrate 57 transparent to ultraviolet rays. On the substrate 57,
One electrode 61 on both sides of the dielectric multilayer mirror 59
Are provided as a pair. On the substrate 57, columns 63 are provided on the left and right sides of the electrode 61 (the left and right sides in FIG. 8). A diaphragm 65 which is a flexible thin film is provided on the upper end surface of the support 63. On the lower surface of the diaphragm 65, a dielectric multilayer mirror 67 is provided. A gap 69 is formed between the dielectric multilayer mirror 59 and the dielectric multilayer mirror 67. A pair of other electrodes 71 are provided on the surface of the diaphragm 65 so as to face the electrodes 61. FIG.
73 in 0 is a spacer.

The substrate 57 is provided with a plate-like planar light source 75 (FIG. 11).
Reference). On the side surface of the flat light source 75, for example, an unillustrated ultraviolet lamp for black light (low-pressure mercury lamp) is provided. The flat light source 75 takes in ultraviolet light from the low-pressure mercury lamp for black light from the side and emits it from the surface (the upper surface in FIG. 11).

The substrate 57, the dielectric multilayer mirrors 59 and 6
7, the support 63, the diaphragm 65, the electrodes 61, 71
The light modulator 79 is constituted.

In the array-type light modulating element 81 having the light modulating section 79 thus configured, the interval of the gap 69 when the voltage is OFF is set to toff (the state on the left side in FIG. 11). When a voltage is applied, the gap 69 is formed by electrostatic force.
Is shortened, and this is set as ton (state on the right side in FIG. 11).

Here, ton and toff are set as follows. ton = 1/2 × λ ₀ = 180 nm (λ ₀ : center wavelength of ultraviolet ray) ton = 3/4 × λ ₀ = 270 nm

Here, the ultraviolet light from the flat light source 75 is 3
It has a spectral characteristic having a center wavelength λ ₀ near 60 nm.

The dielectric multilayer mirrors 59 and 67 are
The light intensity reflectance is R = 0.85. Further, the space 69 is made of air or a rare gas, and its refractive index is set to n = 1. Since the ultraviolet rays are collimated, the angle of incidence i (the angle between the perpendicular to the surface and the incident light) incident on the light modulation section 79 is substantially zero. The light intensity transmittance of the light modulator 79 peaks near 270 nm at toff and peaks near 360 nm at ton. On the other hand, the ultraviolet light from the flat light source 75 has a center wavelength λ ₀ near 360 nm. Therefore, as shown in FIG.
f = 270 nm, and almost no ultraviolet light is transmitted.
In addition, as shown in FIG.
= 180 nm, the ultraviolet light is transmitted.

As described above, the array type light modulating element 81 having the light modulating section 79 can perform the light modulation of the ultraviolet light by causing the multilayer film interference effect by bending the diaphragm 65. The above is the basic operation of the light modulation unit 79 of the array type light modulation element 81. Even with the configuration and principle other than the light modulator shown in the first to third embodiments,
An array-type light modulation element that has the same purpose and deforms the flexible thin film by electrostatic force to change the light transmittance can be similarly applied.

Next, a method of driving the array type light modulation element 81 will be described. Prior to the description of the driving method, first, the characteristics of the voltage applied to the diaphragm 65 and the light transmittance will be described.
FIG. 12 is a hysteresis diagram showing characteristics of applied voltage and light transmittance. When the diaphragm 65, which is a flexible thin film, is deformed and elastically restored by electrostatic stress, the relationship between the applied voltage Vgs and the displacement of the diaphragm 65 shows a hysteresis characteristic. Therefore, the relationship between the applied voltage Vgs and the light transmittance T also shows a hysteresis characteristic as shown in FIG.

According to the hysteresis characteristic, the light modulator 79 in the OFF (light blocking) state maintains the OFF state when Vgs is equal to or lower than Vth (L). On the other hand, when Vgs becomes equal to or higher than Vs (H), the light modulator 79 saturates to the ON (light transmitting) state. Thereafter, when Vgs is equal to or higher than Vth (H), the light modulation section 79 maintains the ON state. And Vgs
Is less than or equal to Vs (L), the light modulator 79 saturates to the OFF state. That is, if Vgs is in the range between Vth (H) and Vth (L), the light modulating unit 79 determines Tgs based on the history of Vgs.
(0N) and T (OFF) can be obtained. Note that when the polarity of Vgs is negative, the characteristics described above are symmetric with respect to the vertical axis.

FIG. 13 is a plan view of an array-type light modulation device in which light modulation units are arranged in a matrix. In this embodiment, for example, each intersection Tr (1,1), T
An optical modulator 79 is arranged at r (1,2), Tr (2,1), Tr (2,2),
An array type light modulation element 81 is configured. Each light modulator 7
Reference numeral 9 corresponds to an area of one pixel.

The respective electrodes 71 of the light modulators 79 arranged in the same row are connected in common and serve as scanning electrodes.
A potential Vg is applied to this scanning electrode. In addition, the respective electrodes 61 of the light modulators 79 arranged in the same column are connected in common and serve as signal electrodes. The potential Vb is applied to this signal electrode. Therefore, the voltage Vgs between the electrodes 61 and 71 applied to each light modulator 79 is (Vb-Vg).

To drive the array-type light modulation element 81,
According to the scanning signal, the electrodes 71 are scanned in a line-sequential manner, and the data signals corresponding to the scanned electrodes 71 are applied to the electrodes 61 in synchronization with the scanning.

Here, three types of signals (voltages) of a reset signal, a selection signal, and a non-selection signal are applied to the scanning electrodes. The reset signal turns off (light shields) the light modulators 79 in the row regardless of the previous state of the light modulators 79. The voltage of the scanning electrode at this time is defined as Vg (r).

The selection signal is a signal for writing data to the row. Simultaneously with this signal, the state of the light modulation section 79 is turned on (light transmission) in accordance with the voltage applied to the signal electrode.
Alternatively, it is determined to be OFF (light blocking). The voltage of the scanning electrode at this time is defined as Vg (s).

The non-selection signal is a signal when no selection is made. At this time, the state of the light modulation section 79 does not change regardless of the voltage of the signal electrode, and the previous state is maintained.
The voltage of the scanning electrode at this time is set to Vg (ns).

On the other hand, two kinds of signals (voltages) of an ON signal and an OFF signal are applied to the signal electrodes. The ON signal is
The state of the light modulator 79 is turned ON (light transmission) for the light modulator 79 in the selected row. The voltage of the signal electrode at this time is set to Vb (on).

The OFF signal is output to the light modulation section 7 of the selected row.
For 9, the state of the light modulation unit 79 is set to OFF (light blocking). However, in practice, it is assumed that the light modulating unit 79 is reset immediately before, so the state of the light modulating unit 79 is changed to O.
The previous state (OFF state) when using FF (light shielding)
May be maintained. The voltage of the signal electrode at this time is Vb
(off).

By the combination of the scanning electrode voltage and the signal electrode voltage described above, the inter-electrode voltage Vgs of the light modulator 79 can be divided into the following six types of voltages. Further, specific conditions are given by the characteristics of the inter-electrode voltage Vgs and the transmittance.

Vgs (r-on) = Vb (on) −Vg (r) ≦ Vs (L) Vgs (r-off) = Vb (off) −Vg (r) ≦ Vs (L) Vgs (s-on ) = Vb (on) −Vg (s) ≧ Vs (H) Vgs (s−off) = Vb (off) −Vg (s) ≦ Vth (L) Vgs (ns−on) = Vb (on) −Vg (ns) ≦ Vth (L) Vgs (ns-off) = Vb (off) −Vg (ns) ≧ Vth (H)

The above conditions are summarized as shown in FIG. FIG. 14 shows the combination of the scanning electrode voltage Vg and the signal electrode voltage Vb, and the inter-electrode voltage Vgs (V
FIG. 4 is an explanatory diagram showing a relationship with (b−Vg). For example, the scan electrode voltage Vg is reset Vg (r) and the signal electrode voltage Vb
Is ON, that is, Vb (on), the signal electrode voltage Vb (the thick solid line 83 in the figure) having a value larger than Vs (H) is
scan electrode voltage Vg (thick solid line 8 in the figure)
5) is subtracted, and the value (thick solid line 87 in the figure) becomes smaller than Vs (L). That is, Vgs (r-on) ≦ Vs (L). Similarly, six types of voltages are determined.

Next, a method of writing data in a matrix in which the light modulating units 79 are two-dimensionally arranged by utilizing such a relationship between the inter-electrode voltage Vgs and the transmittance will be described. FIG.
FIG. 3 is an explanatory diagram of a method of writing data by applying voltages of different waveforms to the respective light modulation units arranged in a matrix.

Data is written using a matrix of 2 rows and 2 columns shown in FIG. It is assumed that the following ON / OFF data is written in each light modulation unit 79 of the matrix. Tr (1,1) → ON Tr (1,2) → OFF Tr (2,1) → OFF Tr (2,2) → ON

A voltage having a waveform as shown in FIG. 15 is applied to the matrix. For example, t1: reset voltage t2: selection voltage t3: non-selection voltage t4: non-selection voltage is applied to the first row Vg (1). To the first column Vb (1), t1: don't care t2: ON voltage t3: OFF voltage t4: don't care. As a result, desired data is written to each light modulation section 79 in a row-sequential manner.

That is, for example, in the case of the matrix Tr (1,1) in the first row and first column, Vgs: Vb (1) -Vg (1), so that t1: reset voltage (OFF) t2: ON t3 = state maintenance t4 = state maintenance.

Accordingly, the ON state at t2 is maintained (memory), and as a result, the light modulation section 79 of the matrix Tr (1,1) is in the "ON" state. In the same manner, the other matrices Tr (1,2) are "OFF", Tr (2,1) is "OFF", and Tr (2,2) is "ON".

As described above, after the reset scan of the light modulation element, the write scan for selecting the displacement operation or the state maintenance of the element is performed, so that the state before the write scan affects the next operation due to the hysteresis characteristics of the element. And writing can be stably performed. In addition, the two-dimensional light modulation array having the simple matrix configuration can be driven without contradiction by the hysteresis characteristics of the elements. Here, "contradiction" means that ON or OFF is determined for the pixels on the write selection scan line, and that the pixels on the non-selection scan line maintain the written state when selected.

Next, a first modification of the third embodiment of the present invention will be described. FIG. 16 is a plan view of a simple matrix showing Modification 1 of the third embodiment. In this modified example, the area S of one pixel is divided into nine areas m, three in length and three in width. A light modulation section 79 is provided in each area m. Each light modulating unit 79 in one pixel includes three different scanning electrodes Vg (1) a, Vg (1) b, Vg (1) c connected to one pixel.
And three different signal electrodes Vb (1) a, Vb (1) b, Vb (1)
connected to each of c.

That is, each light modulator 7 provided for one pixel
No. 9 operates independently by applying the above-mentioned voltages to these scanning electrodes and signal electrodes.

An array type light modulation device 91 according to this modification example
Since each light modulation section 79 can be formed small, the thin film process becomes easy. The voltage applied to deflect the flexible thin film 27 decreases. Since the required displacement of the flexible thin film 27 can be reduced, the response time can be shortened.

In addition to this, even in the case where the light modulator 79 in a binary state is used, nine gradations can be obtained with one pixel by dividing the area of one pixel. .

The array type light modulating element 91 is intended to further increase the number of gradations by combining this gradation method with another gradation method (for example, time division gradation within a field). Good. If the mode has three or more values, it is possible to increase the number of gradations such as the area and the weighted gradation for each light modulation unit.

The array-type light modulation device 91 can also constitute an array-type exposure device and a flat display in the same manner as in the case of the array-type light modulation device 35 described above.

Next, a fourth embodiment of the present invention will be described.
FIG. 17 is a plan view showing the fourth embodiment. The array-type light modulation element 101 according to this embodiment has a region S of one pixel.
Is divided into a plurality of regions m1, m2, and m3 having different areas. The area ratio of the regions m1, m2, and m3 is 1: 2: 4.
It has become. In each area m1, m2, m3,
The light modulation units 103a, 103b, 10
3c is provided. These light modulators 103a, 103
A common scan voltage Vg (1) is applied to the scan electrode portions b and 103c.
Is applied. On the other hand, the signal modulation section 103 is provided in the signal electrode section.
a, 103b, and 103c.
b (1) a, Vb (1) b, and Vb (1) c are applied.

Therefore, according to the array-type light modulation element 101, the O of each of the light modulation sections 103a, 103b, 103c is changed.
By combining N and OFF operations, the amount of transmitted light of one pixel becomes different. As a result, each light modulating unit
Even when the state changes to a value, the transmitted light amount of eight gradations shown in Table 1 can be obtained by the combination.

[0117]

[Table 1]

The array-type light modulation element 101 also
An array-type exposure element and a flat-panel display can be constructed in the same manner as in the case of the array-type light modulation element 35 described above.

Next, a fifth embodiment of the present invention will be described.
FIG. 18 is an equivalent circuit diagram of a pixel unit according to the fifth embodiment. In the array type light modulation element 111 according to this embodiment, a light modulation unit 113 is provided for each region m obtained by dividing the region S of one pixel into a plurality. Further, an active element (for example, TFT) 115 is provided corresponding to one pixel. The active element 115 includes a gate electrode 117, a drain electrode 119,
It has a source electrode 121.

The gate electrode 117 is connected to a scanning signal line 123 for each row. The image signal line 125 for each column is connected to the drain electrode 119. One counter electrode of each light modulation unit 113 is commonly connected to the source electrode 121. Further, a common electrode 127 is connected to the other counter electrode of each light modulation unit 113.

That is, this array type light modulation element 111
A plurality of light modulators 113 in one pixel can be commonly controlled by one active element 115.

In the array-type light modulation element 111 configured as described above, a voltage for conducting the active element 115 is applied to the scanning signal line 123 connected to the gate electrode 117. When a desired image signal is applied to the image signal line 125 connected to the drain electrode 119, the drain electrode 119 and the source electrode 121 conduct. Therefore, an image signal is applied to one of the opposite electrodes of the light modulation unit 113. Thereby, one counter electrode and
The light modulators 113 operate in common for each pixel by a voltage with the other counter electrode connected to the common electrode 127.

According to the array type light modulation element 111,
For scanning another row, the state of the light modulator 113 can be maintained even when the active element 115 is turned off. Therefore, active matrix driving, in which the light modulators 113 are operated in common for each pixel, becomes possible.

The array-type light modulation element 111 also has
An array-type exposure element and a flat-panel display can be constructed in the same manner as in the case of the array-type light modulation element 35 described above.

Next, a sixth embodiment of the present invention will be described.
FIG. 19 is an equivalent circuit diagram of a pixel unit according to the sixth embodiment. In the array type light modulation element 131 according to this embodiment, a light modulation unit 133 is provided for each region m obtained by dividing the region S of one pixel into a plurality. Each pixel has one light modulation unit 1
33, a plurality of active elements 115 are provided.

A scanning signal line 123 for each row is commonly connected to a gate electrode 117 of each active element 115. On the other hand, different image signal lines 125a, 125b, and 125 are connected to the drain electrode 119 of each active element 115.
c is connected. Source electrode 12 of each active element 115
1 is connected to one counter electrode of each light modulator 133. In addition, the other counter electrode of each light modulator 133 has
The common electrode 127 is connected.

That is, this array type light modulation element 131
One pixel includes a plurality of active elements 115 and each active element 1
15 and can be controlled by an optical modulator 133 connected to the optical modulator 15.

In the array-type light modulating element 131 thus configured, desired image signals are applied to different image signal lines 125a, 125b and 125c connected to the drain electrode 119. Thereby, one counter electrode and
Each light modulation unit 133 operates differently in one pixel depending on the voltage with the other counter electrode connected to the common electrode 127.

According to this array type light modulation element 131,
In the active matrix driving using the active element 115, a plurality of light modulating units 133 divided in one pixel
Can be individually driven. As a result, by changing the combination for driving each light modulation unit 133, it is possible to obtain the transmitted light amount of a plurality of gradations in one pixel.

Note that this array type light modulation element 131 also
An array-type exposure element and a flat-panel display can be constructed in the same manner as in the case of the array-type light modulation element 35 described above.

Next, a method for driving the array-type light modulation element 131 in an active matrix by the active matrix configuration will be described below.

First, a method for active matrix driving when the array type light modulation element 131 does not have the hysteresis characteristic will be described. FIG. 20 is an equivalent circuit diagram of a semiconductor active matrix arranged in two rows and two columns, and FIG. 21 is an explanatory diagram of a method of writing data by applying a voltage having a different waveform to each light modulation unit of the semiconductor active matrix.
The characteristics of the applied voltage Vgs and the light transmittance T of the light modulation element are as follows:
The characteristics are the same as those described with reference to FIG.

Here, a specific driving method for writing the following potentials to the pixel electrodes in two rows and two columns shown in FIG. 20 will be described. Tr (1,1) = ON Tr (1,2) = OFF Tr (2,1) = OFF Tr (2,2) = ON

The pixel electrodes 87 of Tr (1,1), Tr (1,2) or Tr (2,1), Tr (2,2) arranged in the same row are connected to a common scanning signal line 91. I have. This scanning signal line 91
Is applied with a potential Vg. Further, the pixel electrodes of Tr (1,1) and Tr (2,1) or Tr (1,2) and Tr (2,2) arranged in the same column are connected to a common image signal line 89. is there. The potential Vb is applied to this image signal line.

In order to drive the active matrix element configured as described above, Tr is sequentially applied in a row in accordance with the scanning signal.
(1,1), Tr (1,2), or Tr (2,1), scans the pixel electrode of Tr (2,2), synchronizes with this, and outputs a data signal corresponding to the scanned pixel electrode. It is applied to the pixel electrodes of Tr (1,1), Tr (2,1) or Tr (1,2), Tr (2,2) arranged in a column.

At this time, a voltage having a waveform shown in FIG. 21 is applied to the matrix. For example, t1: scanning ON (conduction) voltage t2: scanning OFF (non-conduction) voltage is applied to the first row Vg (1).

To the second row Vg (2), t1: scanning OFF (non-conducting) voltage t2: scanning ON (conducting) voltage is applied.

To the first column Vb (1), an ON (transmission) voltage is applied to t1: Tr (1,1) t2: An OFF (light shielding) voltage is applied to Tr (2,1).

To the second column Vb (2), an OFF (light-shielded) voltage is applied to t1: Tr (1,2) and an ON (transmitted) voltage is applied to t2: Tr (2,2).

As a result, the potential Vgs of Tr (1,1) becomes t1
, The potential becomes Vs (H), and as a result, the state of the pixel is turned ON, and the ON state is maintained after t2. The potential Vgs of Tr (1,2) becomes Vs (L) at t1, and as a result, the state of the pixel is turned off and is maintained after t2. Tr (2,
The potential Vgs of 1) becomes the potential Vs (L) at t1, and as a result, the state of the pixel is turned off and is maintained after t2. The potential Vgs of Tr (2,2) becomes Vs (H) at t1, and as a result, the state of the pixel becomes ON, and after t2, the potential becomes Os.
The N state is maintained. As a result, the write operation intended in FIG. 20 is executed as scheduled.

As described above, the scanning gate electrode is turned on (conducting) in a row sequence, and in synchronization with the scanning gate electrode, an ON (transmitting) or OFF (light shielding) potential is applied from the data signal electrode.
After that, even if the scanning gate electrode is turned off (non-conductive),
When the light modulation element is capacitive, the potential of the pixel electrode is held.

Next, a method of driving the active matrix in the case where the array type light modulation element 131 having the active matrix configuration has the hysteresis characteristics shown in FIG. 12 will be described below.

In the same manner as above, the driving of the active matrix configuration in the case where the following binary data is written into each pixel of 2 rows and 2 columns as shown in FIG. 20 will be described. Tr (1,1) = ON Tr (1,2) = OFF Tr (2,1) = OFF Tr (2,2) = ON FIG. 22 shows the driving voltages Vg and Vb of the active matrix configuration shown in FIG. FIG.

The applied voltage in this case is, as shown in FIG. 22, the first row Vg t1: scanning ON (conduction) t2: scanning OFF (non-conduction) second row Vg t1: scanning OFF (non-conduction) t2: Scan ON (conduction) First column Vb First half of t1: Reset (light-shielded) voltage applied to Tr (1,1) Second half of t1: ON (transmitted) voltage applied to Tr (1,1) First half of t2: Tr (2 , 1) Reset (light-shielded) voltage applied Second half of t2: OFF (light-shielded) voltage applied to Tr (2,1) Second column Vb First half of t1: Reset (light-shielded) voltage applied to Tr (1,2) t1 Second half: Applying OFF (light blocking) voltage to Tr (1,2) First half of t2: Applying reset (light blocking) voltage to Tr (2,2) Second half of t2: Applying ON (transmitting) voltage to Tr (2,2) Become.

As described above, the scanning gate electrode is applied to Vg
ON (conduction) is turned on by -on, and an ON (transmission) or OFF (light shielding) potential is supplied from the data signal electrode in synchronization with the ON. After that, even when the scanning gate electrode is turned off (disconnected), the pixel potential is maintained.

The results shown in FIGS. 22 and 23 are as follows.
Tr (1,1) is “ON”, Tr (1,2) is “OFF”, Tr (2,1) is “OFF”, and Tr (2,2) is “ON”. This allows
Even if the light modulation element has a hysteresis characteristic, FIG.
Thus, the intended write operation can be executed as expected without inconsistency. .

Further, active matrix driving can be performed in the same manner as a driving method in which the reset period and the writing period are independently scanned. In the active matrix driving described above, a voltage of a predetermined constant level is applied at the time of writing scanning, so that “ON”, “OF”
Although the two values of “F” are controlled, the present invention is not limited to this, and a driving method of performing multi-grayscale control by setting an applied voltage to a voltage of an arbitrary level may be used.

[0148]

As described above in detail, the array type light modulation device, the array type exposure device, and the flat panel display according to the present invention have a light modulation unit in each of a plurality of divided regions of one pixel. Provided. For this reason, the size of the light modulator can be reduced, and the degree of freedom in designing the light modulator can be increased. For example, the height of the support can be reduced, and the thin film process becomes easy. Further, since the required displacement of the flexible thin film can be reduced, the response time is shortened, and the speed can be increased.

An array type light modulating element, and a driving method for an array type light modulating element of an array type light exposing element and a flat type display are provided with a light modulating section in each of a plurality of divided areas of one pixel. Operate the unit differently. For this reason, even when each light modulator is in the binary mode, it is possible to perform multi-tone control in units of one pixel.

After the reset scan for performing the elastic return operation of the light modulation element, the write scan for selecting the displacement operation or the state maintenance of the element is performed. For this reason, even if the light modulation element has the hysteresis characteristic, the light modulation element can be driven stably without contradiction.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a first embodiment of an array-type light modulation device according to the present invention.

FIG. 2 is a cross-sectional view illustrating an operation state of the array-type light modulation element illustrated in FIG.

FIG. 3 is a plan view showing a second embodiment.

FIG. 4 is a sectional view taken along line AA of FIG. 3;

FIG. 5 is a plan view illustrating an operation state of the light modulation unit illustrated in FIG. 3;

FIG. 6 is a sectional view of FIG. 5;

FIG. 7 is a plan view of an array-type light modulation element in which a plurality of light modulation units shown in FIG. 3 are formed in one pixel region.

FIG. 8 is a plan view showing a third embodiment.

FIG. 9 is a sectional view taken along line BB of FIG. 8;

FIG. 10 is a sectional view taken along line CC of FIG. 8;

11 is a cross-sectional view illustrating an operation state of the exposure device shown in FIG.

FIG. 12 is a hysteresis diagram showing characteristics of applied voltage and light transmittance.

FIG. 13 is a plan view of an array-type light modulation element in which light modulation units are arranged in a matrix.

FIG. 14 is an explanatory diagram showing a relationship between a combination of a scanning electrode voltage and a signal electrode voltage and a voltage between electrodes of a light modulation unit.

FIG. 15 is an explanatory diagram of a method of writing data by applying voltages of different waveforms to the respective light modulators arranged in a matrix.

FIG. 16 is a plan view of a simple matrix showing Modification 1 of the third embodiment.

FIG. 17 is a plan view showing a fourth embodiment.

FIG. 18 is an equivalent circuit diagram of a pixel unit according to a fifth embodiment.

FIG. 19 is an equivalent circuit diagram of a pixel unit according to a sixth embodiment.

FIG. 20 is an equivalent circuit diagram of a pixel portion having an active matrix configuration.

FIG. 21 is an explanatory diagram of a method of writing data by applying voltages of different waveforms to the respective light modulation units arranged in a matrix.

FIG. 22 is a diagram illustrating a waveform of a voltage applied to each light modulation unit arranged in a matrix.

FIG. 23 is a diagram showing waveforms of voltages applied to electrodes of each light modulation unit arranged in a matrix.

FIG. 24 is a side view of a main part of a conventional light modulation element.

FIG. 25 is a side view of a main part of an operation state of a conventional light modulation element.

[Explanation of symbols]

27, 65 Flexible thin film 33, 53, 79, 103a, 103b, 103c, 1
13, 133 Light modulation section 35, 55, 81, 91, 101, 111, 131 Array type light modulation element 75 Planar light source 115 Active element

Claims (18)

[Claims] 1. An array-type light modulating element in which light modulating sections having a flexible thin film are arranged one-dimensionally or two-dimensionally and the flexible thin film is deformed by electrostatic stress to change light transmittance. An array type light modulating element, wherein the light modulating unit is provided in each of a plurality of divided regions. 2. A light emitting device according to claim 1, wherein a plurality of light modulating units provided in respective regions of said one pixel are connected by a common electrode, and the operation of each light modulating unit in one pixel is equal. 2. The array-type light modulation device according to 1. 3. A plurality of light modulators provided in respective regions of the one pixel are connected by different electrodes, and the operation of each light modulator in one pixel is different. An array-type light modulation device according to claim 1. 4. The array type light modulation device according to claim 1, wherein said one pixel is divided into regions having different areas. 5. The array type light modulation device according to claim 1, wherein each pixel is arranged in a simple matrix structure. 6. The array type light modulation device according to claim 1, wherein each pixel is arranged in an active matrix structure to which an active device is added. 7. The array-type light modulation device according to claim 1, further comprising: a planar light source disposed to face the array-type light modulation device, wherein the light is emitted from the plane light source. An array-type light modulating device, the light being modulated by the array-type light modulating element. 8. The array-type light modulation element according to claim 1, a planar light source arranged to face the array-type light modulation element, and a light source that sandwiches the array-type light modulation element. A phosphor provided on the opposite side of the plane light source, wherein the light emitted from the array-type light modulation element is wavelength-converted into visible light or infrared light by the phosphor. . 9. The array type exposure device according to claim 7, wherein the flat light source is an ultraviolet light emitting light source. 10. The array-type light modulation device according to claim 1, a planar light source arranged to face the array-type light modulation device, and the array-type light modulation device. And a phosphor provided on the opposite side of the flat light source, wherein the phosphor emits light and is displayed by light emitted from the array type light modulation element. 11. The flat display according to claim 10, wherein the flat light source is an ultraviolet light emitting light source. 12. The method for driving an array-type light modulation element according to claim 1, wherein the light modulation section is provided in each of a plurality of divided regions of one pixel. A method for driving an array-type light modulation element, wherein the light modulation sections are connected by different electrodes, each light modulation section is operated differently, and gradation control is performed by changing the amount of transmitted light per pixel. 13. The method according to claim 12, wherein the one pixel is divided into regions having different areas and driven. 14. The method according to claim 12, wherein the light modulator is driven by a simple matrix. 15. The optical modulator according to claim 12, wherein the light modulator is driven by an active matrix.
4. The method for driving an array-type light modulation element according to 3. 16. The method for driving an array-type light modulation element according to claim 1, wherein the light modulation element performs a displacement operation of a flexible thin film by an electrostatic force, and An array-type light modulation element which performs light modulation by elastic return operation of a flexible thin film and performs a write scan for selecting a displacement operation or state maintenance after a reset scan for performing an elastic return operation of the light modulation element. Drive method. 17. The method for driving an array-type light modulation element according to claim 6, wherein the light modulation element is configured to perform a displacement operation of a flexible thin film by an electrostatic force and an elastic return of the flexible thin film. A method for driving an array-type light modulation element, comprising: performing light modulation by the operation and performing a writing scan for applying a desired voltage to the light modulation element. 18. The method of driving an array-type light modulation element according to claim 6, wherein the light modulation element is configured to perform a displacement operation of a flexible thin film by an electrostatic force and an elastic return of the flexible thin film. And a write scan for applying a desired voltage after applying a reset signal for performing a return operation of the light modulation element.