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JP2000022170A - Electronic component and manufacture thereof - Google Patents

Electronic component and manufacture thereof

Info

Publication number
JP2000022170A
JP2000022170A JP10182527A JP18252798A JP2000022170A JP 2000022170 A JP2000022170 A JP 2000022170A JP 10182527 A JP10182527 A JP 10182527A JP 18252798 A JP18252798 A JP 18252798A JP 2000022170 A JP2000022170 A JP 2000022170A
Authority
JP
Japan
Prior art keywords
substrate
support
substrates
thin film
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10182527A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawai
浩史 川合
Shinji Kobayashi
真司 小林
Yasuhiro Negoro
泰宏 根来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP10182527A priority Critical patent/JP2000022170A/en
Publication of JP2000022170A publication Critical patent/JP2000022170A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component that is made thinner and has strength improved with respect to external pressure such as atmospheric pressure. SOLUTION: This electronic component is provided with a sealed space 2c between a support substrate 1a and a lid substrate 1c, where the pressure is reduced to below atmospheric pressure. Sealed parts 8a, 9a, 11, 12 are housed in this sealed space 2c. At least one support body 13 is provided between the support substrate 1a and the lid substrate 1c in the sealed space 2c, and the two substrates support each other against the atmospheric pressure.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、フォトエッチング
技術、半導体の微細加工技術などを用いて形成した角速
度センサ、加速度センサなどの電子部品に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to electronic components such as an angular velocity sensor and an acceleration sensor formed by using a photo-etching technique, a semiconductor fine processing technique and the like.

【0002】[0002]

【従来の技術】従来、フォトエッチング技術および半導
体の微細加工技術を用いて、角速度センサ、加速度セン
サ、圧力センサなどの超小型の電子部品が製造されてい
る。図10および図11を参照して、従来の電子部品と
して角速度センサ20について説明する。
2. Description of the Related Art Conventionally, ultra-small electronic components such as angular velocity sensors, acceleration sensors, and pressure sensors have been manufactured using photoetching technology and semiconductor fine processing technology. Referring to FIGS. 10 and 11, an angular velocity sensor 20 will be described as a conventional electronic component.

【0003】1aはパイレックスガラスよりなる支持基
板で、中央部に凹部2を有する。この凹部2の一つの対
向する内壁の中央部には窪み2a、2aがそれぞれ形成
される。この支持基板1aの上面1a’および窪み2a
を含む凹部2の上側には、つぎに説明する機能素子が設
けられるが、これらはすべて一枚のシリコン薄膜1bを
加工して形成される。
[0003] Reference numeral 1a denotes a supporting substrate made of Pyrex glass, which has a concave portion 2 at the center. Depressions 2a, 2a are respectively formed in the center of one opposed inner wall of the recess 2. Upper surface 1a 'of this support substrate 1a and depression 2a
On the upper side of the concave portion 2 including the above, there are provided functional elements described below, all of which are formed by processing one silicon thin film 1b.

【0004】窪み2a、2a側の支持基板1aの上面1
a’には、固定電極3、4がそれぞれ形成される。この
固定電極3、4からそれぞれ対向する方向に伸びる固定
櫛歯電極3a、4aが窪み2a、2aの上側に形成され
る。
The upper surface 1 of the support substrate 1a on the side of the depressions 2a, 2a
Fixed electrodes 3 and 4 are respectively formed on a ′. Fixed comb electrodes 3a, 4a extending from the fixed electrodes 3, 4 in opposite directions are formed above the depressions 2a, 2a.

【0005】また、凹部2のもう一つの対向する内壁の
中央部の支持基板1aの上面1a’には、それぞれ固定
電極5、6が形成される。この固定電極5、6には固定
梁7、7がそれぞれ結合している。この固定梁7、7に
はコ字型の外可動梁8a、8aがその中点部でそれぞれ
結合している。そして、この外可動梁8a、8aのコ字
型の先端部は、矩形状の振動重り11、12の外側角部
にそれぞれ結合している。
Further, fixed electrodes 5 and 6 are formed on the upper surface 1a 'of the support substrate 1a at the center of another opposed inner wall of the recess 2 respectively. Fixed beams 7, 7 are connected to the fixed electrodes 5, 6, respectively. U-shaped outer movable beams 8a, 8a are respectively connected to the fixed beams 7, 7 at their midpoints. The U-shaped tips of the outer movable beams 8a are connected to the outer corners of the rectangular vibration weights 11 and 12, respectively.

【0006】また、固定梁7、7の両側の外可動梁8
a、8aからはそれぞれ対向する方向に伸びる内可動梁
9a、9aが振動重り11、12の内側角部にそれぞれ
結合しいる。
Further, outer movable beams 8 on both sides of the fixed beams 7, 7 are provided.
Inner movable beams 9a, 9a extending in opposite directions from a, 8a are connected to inner corners of the vibrating weights 11, 12, respectively.

【0007】振動重り11、12からは、固定櫛歯電極
3a、4aの間に非接触に伸びる可動櫛歯電極11a、
12aがそれぞれ形成される。これらの振動重り11、
12は、外可動梁8a、内可動梁9aおよび固定梁7を
介して固定電極5、6に自由振動可能に支持される。
[0007] The movable comb electrodes 11a extending from the vibrating weights 11 and 12 in a non-contact manner between the fixed comb electrodes 3a and 4a.
12a are respectively formed. These vibration weights 11,
Reference numeral 12 is supported by the fixed electrodes 5 and 6 via the outer movable beam 8a, the inner movable beam 9a and the fixed beam 7 so as to be freely vibrated.

【0008】また、振動重り11の下側の凹部2の底面
には電極11bが形成されて、振動重り11と電極11
bとの間でコンデンサが形成される。
An electrode 11b is formed on the bottom surface of the concave portion 2 below the vibration weight 11, and the vibration weight 11 and the electrode 11
and a capacitor is formed with the capacitor b.

【0009】更に、振動重り12の下側の凹部2の底面
には電極12bが形成されて、振動重り12と電極12
bとの間でコンデンサが形成される。
Further, an electrode 12b is formed on the bottom surface of the concave portion 2 below the vibrating weight 12, and the vibrating weight 12 and the electrode 12 are formed.
and a capacitor is formed with the capacitor b.

【0010】また、固定電極3〜6以外の支持基板1a
の上面1a’は、シリコン薄膜1bにより被覆される。
そして、シリコン薄膜1bと固定電極3〜6の間にスリ
ットが設けられて、これらは電気的に絶縁される。
Further, the supporting substrate 1a other than the fixed electrodes 3 to 6
Is covered with a silicon thin film 1b.
A slit is provided between the silicon thin film 1b and the fixed electrodes 3 to 6, and these are electrically insulated.

【0011】支持基板1aの上面1a’に形成されたシ
リコン薄膜1bの上には、支持基板1aと同一材料で窪
み2aを含む凹部2の形成された同一形状の蓋基板1c
が対向して接合される。
On the silicon thin film 1b formed on the upper surface 1a 'of the support substrate 1a, a lid substrate 1c of the same shape as that of the support substrate 1a and having the concave portion 2 including the depression 2a is formed.
Are joined to face each other.

【0012】この接合の結果、振動重り11、12など
の可動部と固定櫛歯電極3a、4aなどの固定部を含む
被封止物を内包する密閉空間2bが形成される。この密
閉空間2bは、通常、振動重り11、12などの可動部
の空気抵抗を小さくするために、1気圧以下に減圧され
る。
As a result of this joining, a sealed space 2b is formed which includes an object to be sealed including movable parts such as the vibrating weights 11 and 12 and fixed parts such as the fixed comb electrodes 3a and 4a. This closed space 2b is normally reduced to 1 atm or less in order to reduce the air resistance of the movable parts such as the vibrating weights 11 and 12.

【0013】つぎに、角速度センサ20の動作について
説明する。固定電極3(4)と固定電極5(6)との間
に直流電圧に重畳して交流電圧を印加する。すると、振
動重り11と12は、静電吸引力により、それぞれx軸
方向で互いに逆方向に交流電圧の周波数で振動するよう
になる。この振動は、外可動梁8aおよび内可動梁9a
の相互のしなりにより可能となる。このように振動重り
11、12が振動しているときに、角速度センサ20に
固定梁7、7を結ぶy軸回りの回転が加わると、振動重
り11、12はこの回転力によりコリオリ力を受けてz
軸方向で互いに上下逆方向にも振動するようになる。こ
の振動により、振動重り11と電極11bとの間に形成
される静電容量と振動重り12と電極12bとの間に形
成される静電容量とが差動的に変化することになる。こ
れらの静電容量の変化容量を電圧変換して差動増幅する
ことにより、コリオリ力を利用して角速度を求めること
ができる。なお、静電容量の取り出しには、基板1a、
1cに設けたバイヤホールなどの手段が用いられる。
Next, the operation of the angular velocity sensor 20 will be described. An AC voltage is applied between the fixed electrode 3 (4) and the fixed electrode 5 (6) while being superimposed on a DC voltage. Then, the vibrating weights 11 and 12 vibrate at the frequency of the AC voltage in directions opposite to each other in the x-axis direction due to the electrostatic attraction force. This vibration is caused by the outer movable beam 8a and the inner movable beam 9a.
This is made possible by mutual bends. As described above, when the vibrating weights 11 and 12 are vibrating and the angular velocity sensor 20 is rotated about the y-axis connecting the fixed beams 7 and 7, the vibrating weights 11 and 12 receive Coriolis force due to the rotational force. T
Vibration also occurs in the up-down direction in the axial direction. Due to this vibration, the capacitance formed between the vibration weight 11 and the electrode 11b and the capacitance formed between the vibration weight 12 and the electrode 12b change differentially. Angular velocity can be obtained by utilizing the Coriolis force by voltage-converting and amplifying differentially the change capacitance of these capacitances. In order to take out the capacitance, the substrate 1a,
Means such as a via hole provided in 1c are used.

【0014】[0014]

【発明が解決しようとする課題】しかしながら、従来の
電子部品としての角速度センサ20は、可動部の空気抵
抗を減らして検出感度を向上させるために、密閉空間2
bを1気圧以下に減圧している。このように密閉空間2
bを減圧すると、この密閉空間2bの外部筐体としての
支持基板1aおよび蓋基板1cが、図11に破線矢印で
示す大気圧に押されて変形または破壊する懸念があるの
で、支持基板1aおよび蓋基板1cの厚みを厚くしなけ
ればならなかった。そのため、角速度センサ20などの
電子部品が厚くなり、その形状が大きくなっていた。
However, the conventional angular velocity sensor 20 as an electronic component has a closed space 2 in order to reduce the air resistance of the movable portion and improve the detection sensitivity.
b is reduced to 1 atm or less. Thus, the closed space 2
When the pressure b is reduced, there is a concern that the supporting substrate 1a and the lid substrate 1c as the outer casing of the closed space 2b may be deformed or destroyed by being pushed by the atmospheric pressure indicated by the dashed arrow in FIG. The thickness of the lid substrate 1c has to be increased. For this reason, electronic components such as the angular velocity sensor 20 have become thicker and have a larger shape.

【0015】そこで、本発明は、薄型化を図ると共に、
大気圧などの外部圧力に対する強度を向上させた電子部
品を提供することを目的とする。
Therefore, the present invention aims to reduce the thickness and
An object of the present invention is to provide an electronic component having improved strength against external pressure such as atmospheric pressure.

【0016】[0016]

【課題を解決するための手段】請求項1に記載の電子部
品に係る発明は、二つの基板の間に大気圧以下に減圧し
た密閉空間を設け、この密閉空間内に被封止物を収容
し、該密閉空間内の前記二つの基板間に該二つの基板を
支える少なくとも一つの支持体を備えているものであ
る。
According to the first aspect of the present invention, there is provided an electronic component having a sealed space between two substrates, the sealed space being reduced to an atmospheric pressure or less, and an object to be sealed is accommodated in the sealed space. And at least one support for supporting the two substrates between the two substrates in the closed space.

【0017】この発明は、減圧されている密閉空間を形
成する二つの基板(支持基板と蓋基板)の間に、少なく
とも一方の基板を支える支持体を設けているので、大気
圧などの外部圧力により該一方の基板が密閉空間内へ凹
むことがない。したがって、この発明は、外部筐体を構
成する少なくとも一方の基板を薄くすることができて、
薄型電子部品を実現することができると共に、外部圧力
に対する強度を向上させることができる。
According to the present invention, since the support for supporting at least one of the substrates is provided between the two substrates (the support substrate and the lid substrate) forming the closed space which is reduced in pressure, the external pressure such as the atmospheric pressure is provided. Accordingly, the one substrate does not dent into the closed space. Therefore, the present invention can reduce the thickness of at least one of the substrates constituting the external housing,
A thin electronic component can be realized, and the strength against external pressure can be improved.

【0018】この発明における密閉空間は、基板の一方
あるいは双方に凹部を設けて形成できる。また、封止物
は、物理量を検出する機能素子または機能動作をする装
置などで、二つの基板の間に介在させたシリコンなどの
薄膜部材を加工して形成し、或いは他の材料を加工して
形成される。また、支持体も二つの基板および薄膜部材
あるいは他の材料で形成される。
The closed space in the present invention can be formed by providing a concave portion in one or both of the substrates. In addition, the sealing object is formed by processing a thin film member such as silicon interposed between two substrates with a functional element for detecting a physical quantity or a device for performing a functional operation, or by processing another material. Formed. The support is also formed of two substrates and a thin film member or another material.

【0019】請求項2に記載の電子部品に係る発明は、
凹部を備えた二つの基板を該凹部側を対向させて密閉空
間を形成し、該密閉空間に少なくとも可動部を配置した
機能素子を前記基板間に形成し、前記二つの基板の凹部
の底面間に前記凹部の動作を妨げない位置に、前記二つ
の基板の底面を支える少なくとも一つの支持体を備えた
ものである。
The invention according to claim 2 is an electronic component,
A sealed space is formed by facing two recessed substrates with their recessed sides facing each other, and a functional element having at least a movable portion disposed in the sealed space is formed between the substrates, and between the bottom surfaces of the recessed portions of the two substrates. And at least one support for supporting the bottom surfaces of the two substrates at a position where the operation of the recess is not hindered.

【0020】この発明においては、少なくとも一方の基
板の凹部の底面部分の肉厚は他の部分に比べて薄くなっ
ている。したがって、密閉空間を減圧すると大気圧によ
り凹部の底面部分が凹もうとするが、この底面部分は支
持体により密閉空間の内部から支持されているので、内
部へ凹むことはない。
In the present invention, the thickness of the bottom surface portion of the concave portion of at least one substrate is smaller than that of the other portion. Therefore, when the pressure in the closed space is reduced, the bottom surface of the concave portion tends to be recessed due to the atmospheric pressure. However, since the bottom surface portion is supported from the inside of the closed space by the support, it does not dent into the inside.

【0021】また、密閉空間の気圧を大気圧以下にする
と可動部に作用する空気の粘性抵抗が減少し可動部の動
作が敏捷になる。支持体は可動部の動作を妨げない位置
に設けられており、また可動部の面中に設けられた空間
を利用した部位に支持体を植設してもよい。支持体を複
数設けると凹部底面を支える力が増大する。
Further, when the pressure in the closed space is made equal to or lower than the atmospheric pressure, the viscous resistance of the air acting on the movable portion is reduced, and the operation of the movable portion becomes quick. The support is provided at a position that does not hinder the operation of the movable part, and the support may be planted at a site using a space provided in the surface of the movable part. Providing a plurality of supports increases the force for supporting the bottom surface of the concave portion.

【0022】請求項3に記載の電子部品に係る発明は、
前記支持体が、前記基板と同じ材料で形成されているも
のである。
The invention according to claim 3 is an electronic component according to the present invention,
The support is made of the same material as the substrate.

【0023】この発明は、支持体が両基板と同一の材料
で形成されているので、両基板に凹部を形成するとき
に、これらの両基板の材料の一部を残して支持体とす
る。そして、この支持体により、大気圧などの外部圧力
に抗して少なくとも一方の基板を支えることができる。
In the present invention, since the support is made of the same material as both substrates, when forming the recesses in both substrates, a part of the material of both substrates is left as the support. The support can support at least one substrate against external pressure such as atmospheric pressure.

【0024】請求項4に記載の電子部品に係る発明は、
前記支持体が、ガラス、シリコン及びガラスの3層構造
よりなるものである。
According to a fourth aspect of the present invention, there is provided an electronic component comprising:
The support has a three-layer structure of glass, silicon and glass.

【0025】この発明は、両基板がガラスで、機能素子
形成材料がシリコンである場合に、両基板のガラスで上
下支持部を形成し、機能素子形成材料のシリコンで可動
部を作る際、該シリコンの一部を残して中間支持部と
し、3層構造の支持体を形成することができる。そし
て、この支持体により、大気圧などの外部圧力に抗して
基板を支えることができる。
According to the present invention, when both substrates are glass and the functional element forming material is silicon, when forming the upper and lower support portions with the glass of both substrates and forming the movable portion with the functional element forming material silicon, A part of silicon is left as an intermediate support part, so that a support having a three-layer structure can be formed. The substrate can support the substrate against external pressure such as atmospheric pressure.

【0026】請求項5に記載の電子部品の製造方法に係
る発明は、二つの基板に凹部をそれぞれ形成すると共
に、該凹部の底面に少なくとも一つの支持部をそれぞれ
植設する工程と、一方の基板の凹部の形成された面側に
薄膜部材を設ける工程と、該薄膜部材を加工して前記凹
部の領域に可動部を有する機能素子を形成すると共に、
前記支持部の先端面に前記薄膜部材の一部を残存させる
工程と、前記二つの基板の凹部および支持部が対向する
ように、他方の基板を薄膜部材に重ねて接合する工程
と、からなるものである。
According to a fifth aspect of the invention, there is provided an electronic component manufacturing method, wherein a concave portion is formed in each of two substrates, and at least one supporting portion is respectively implanted on a bottom surface of the concave portion. A step of providing a thin film member on the surface of the substrate where the concave portion is formed, and processing the thin film member to form a functional element having a movable portion in the region of the concave portion,
A step of leaving a part of the thin film member on the distal end surface of the support portion, and a step of overlapping and joining the other substrate to the thin film member so that the concave portion and the support portion of the two substrates face each other. Things.

【0027】この発明は、シリコンなどの薄膜部材を一
方の基板に接合したとき、該薄膜部材が、支持部に支え
られて基板の凹部内へ凹むことがなく、均一平面を保持
できて、機能素子の加工に精度の高いフォトリソグラフ
ィを実現することができる。
According to the present invention, when a thin film member such as silicon is bonded to one of the substrates, the thin film member is supported by the supporting portion and does not dent into the concave portion of the substrate, and can maintain a uniform flat surface. High-accuracy photolithography can be realized for element processing.

【0028】[0028]

【発明の実施の形態】以下に、図1を参照して、本発明
の電子部品の一実施例として、角速度センサ10につい
て説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An angular velocity sensor 10 will be described below with reference to FIG. 1 as an embodiment of an electronic component according to the present invention.

【0029】本実施例は、図10に示す従来の角速度セ
ンサ20の改良に関するものであるから、従来の角速度
センサ20と同一部分には同一番号を付してその説明を
援用する。
Since the present embodiment relates to an improvement of the conventional angular velocity sensor 20 shown in FIG. 10, the same parts as those of the conventional angular velocity sensor 20 are denoted by the same reference numerals, and the description is used.

【0030】図1および図9において、13bは下支持
部13aの上に形成された中間支持部で、振動重り1
1、12などの可動部および固定電極3〜6などの固定
部を形成しているシリコン薄膜1bと同一のシリコン材
料によるものである。下支持部13aは、図2に示すよ
うに、支持基板1aの凹部2の底面に複数個植設され
て、外可動梁8a、内可動梁9aおよび振動重り11、
12などからなる可動部10aに接触しないような部位
に設けられる。即ち、可動部10aの外可動梁8aと内
可動梁9aの間の空間あるいは振動重り11と12の間
の空間に形成される。
In FIG. 1 and FIG. 9, reference numeral 13b denotes an intermediate support formed on the lower support 13a.
It is made of the same silicon material as the silicon thin film 1b that forms the movable portions such as 1 and 12 and the fixed portions such as the fixed electrodes 3 to 6. As shown in FIG. 2, a plurality of lower support portions 13a are planted on the bottom surface of the concave portion 2 of the support substrate 1a, and the outer movable beam 8a, the inner movable beam 9a, and the vibrating weight 11,
12 and the like, which are provided so as not to contact the movable portion 10a. That is, it is formed in the space between the outer movable beam 8a and the inner movable beam 9a of the movable portion 10a or in the space between the vibrating weights 11 and 12.

【0031】なお、図2においては、7個の下支持部1
3aが分散して設けられているが、外部圧力を支えるの
に最も効果的な凹部2の中央部に1個設けてもよい。ま
た、下支持部13aは、可動部10aに接触しない限
り、円柱、角柱、台形など大気圧で変形しない硬さと形
状であれば、いかような形状でもよい。
In FIG. 2, seven lower support portions 1 are provided.
Although 3a are provided in a distributed manner, one may be provided at the center of the concave portion 2 which is most effective for supporting the external pressure. The lower support portion 13a may have any shape such as a cylinder, a prism, or a trapezoid as long as it does not deform under atmospheric pressure unless it comes into contact with the movable portion 10a.

【0032】図1に示す凹部2および窪み2aを含む支
持基板1aの面上1a’に形成されたシリコン薄膜1b
の上には、支持基板1aと同一形状を有する蓋基板1c
が、図9に示すように、凹部2、2、下支持部13aと
上支持部13cなどをそれぞれ対向させて接合される。
そして、支持基板1aと蓋基板1cの窪み2a、2aを
含む凹部2、2とにより、シリコン薄膜1bを介在し
て、可動部10aなどを保護する密閉空間2cが形成さ
れる。
The silicon thin film 1b formed on the surface 1a 'of the supporting substrate 1a including the concave portion 2 and the concave portion 2a shown in FIG.
A lid substrate 1c having the same shape as the support substrate 1a
However, as shown in FIG. 9, the concave portions 2 and 2 and the lower support portion 13a and the upper support portion 13c are joined to face each other.
Then, the closed space 2c that protects the movable portion 10a and the like is formed by the support substrate 1a and the concave portions 2 and 2 including the depressions 2a and 2a of the lid substrate 1c with the silicon thin film 1b interposed therebetween.

【0033】凹部2に形成された下支持部13aとその
上層の中間支持部13bと蓋基板1cの上支持部13c
とは、3層構造を成して支持体13を構成する。この支
持体13は、密閉空間2c内において、支持基板1aと
蓋基板1cとの間に介在して、支持基板1aと蓋基板1
cとが大気圧などの外部圧力により内部へ凹んだり、変
形しないように、支持基板1aと蓋基板1cとを互いに
支える機能を果たす。図9に示す支持体13は、半導体
材料の半導体微細加工工程において、上述のように、ガ
ラス、シリコン、ガラスの3層構造より形成されるが、
単一のシリコン、ガラス、金属などの別の構造材を凹部
2の底面に堆積あるいは接着などして形成してもよい。
The lower support portion 13a formed in the concave portion 2, the upper intermediate support portion 13b, and the upper support portion 13c of the lid substrate 1c
Means that the support 13 has a three-layer structure. The support 13 is interposed between the support substrate 1a and the lid substrate 1c in the closed space 2c, and
c functions to support the support substrate 1a and the lid substrate 1c with each other so that c does not dent or deform into the interior due to external pressure such as atmospheric pressure. The support 13 shown in FIG. 9 is formed of a three-layer structure of glass, silicon, and glass as described above in a semiconductor microfabrication process of a semiconductor material.
Another structural material such as a single piece of silicon, glass, or metal may be formed by depositing or bonding on the bottom surface of the recess 2.

【0034】また、支持基板1a、蓋基板1cとして
は、ガラス基板の他、シリコン基板などの絶縁材料や金
属などの導電材料などから気密性の高い接合が可能な材
料を適宜選別して用いてもよい。
As the supporting substrate 1a and the lid substrate 1c, a material capable of highly airtight bonding can be appropriately selected from a glass substrate, an insulating material such as a silicon substrate, a conductive material such as a metal, and the like. Is also good.

【0035】また、機能素子を構成する材料としては、
シリコンのほか金属などを用いることができ、減圧下で
機械動作可能な可動部を構成できる材料であれば、どの
ような材料でもよい。これは、上述の支持基板1a、蓋
基板1cの材料を考慮して選別される。
The materials constituting the functional element include:
In addition to silicon, a metal or the like can be used, and any material can be used as long as it can form a movable portion that can be mechanically operated under reduced pressure. This is selected in consideration of the materials of the above-described support substrate 1a and lid substrate 1c.

【0036】なお、本実施例の角速度センサ10の動作
については、図10および図11に示す従来の角速度セ
ンサ20と同様である。
The operation of the angular velocity sensor 10 of this embodiment is the same as that of the conventional angular velocity sensor 20 shown in FIGS.

【0037】つぎに、本実施例の角速度センサ10の製
造方法について図3〜図9を参照して説明する。図3に
おいて、厚みが400μmのパイレックスガラス基板2
1を用意する。図4において、フォトエッチングにより
パイレックスガラス基板21を加工して支持基板1aを
形成する。この支持基板1aは、図2に示すように、上
面側の中央部に、角速度センサ10の可動部の自由振動
空間を与える、例えば平面形状が略1mm角で深さが5
0μmの凹部2を有している。そして、凹部2には底面
からの高さが50μmで断面が200μm角の下支持部
13aが、凹部2を形成するときに、パイレックスガラ
ス基板21を部分的に残すことにより複数個形成され
る。
Next, a method of manufacturing the angular velocity sensor 10 of the present embodiment will be described with reference to FIGS. In FIG. 3, a Pyrex glass substrate 2 having a thickness of 400 μm
Prepare 1 In FIG. 4, a Pyrex glass substrate 21 is processed by photoetching to form a support substrate 1a. As shown in FIG. 2, the support substrate 1a provides a free vibration space of the movable portion of the angular velocity sensor 10 at a central portion on the upper surface side.
It has a recess 2 of 0 μm. A plurality of lower support portions 13 a having a height from the bottom surface of 50 μm and a cross section of 200 μm are formed in the recess 2 by partially leaving the Pyrex glass substrate 21 when the recess 2 is formed.

【0038】ついで、フォトリソグラフィ法を用いて、
スパッタリング法、蒸着法などにより、アルミニュウム
(Al)、金(Au)/クロム(Cr)などの金属膜よ
りなる電極11b、12bを凹部2の底面に形成する。
Next, using a photolithography method,
Electrodes 11b and 12b made of a metal film such as aluminum (Al) or gold (Au) / chromium (Cr) are formed on the bottom surface of the recess 2 by a sputtering method, a vapor deposition method, or the like.

【0039】図5において、支持基板1aと同じ大きさ
を有して厚みが300μmのシリコン基板22を用意す
る。そして、支持基板1aの凹部2側の上面1a’およ
び下支持部13aの先端面とシリコン基板22とを陽極
接合する。この陽極接合は、1気圧の大気圧雰囲気中に
おいて、支持基板1aとシリコン基板22の基板温度を
400℃にし、支持基板1aを陰極側にし、シリコン基
板22を陽極側にし、これらの間に1kVの直流電圧を
印加して行われる。この陽極接合により形成された密閉
凹部2は、常温に戻ると1気圧以下になる。
In FIG. 5, a silicon substrate 22 having the same size as the support substrate 1a and a thickness of 300 μm is prepared. Then, the upper surface 1a 'of the support substrate 1a on the concave portion 2 side and the tip surface of the lower support portion 13a are anodically bonded to the silicon substrate 22. In this anodic bonding, in an atmospheric pressure atmosphere of 1 atm, the substrate temperature of the support substrate 1a and the silicon substrate 22 is set to 400 ° C., the support substrate 1a is set to the cathode side, and the silicon substrate 22 is set to the anode side. This is performed by applying a DC voltage of When the temperature of the closed concave portion 2 formed by the anodic bonding returns to normal temperature, the pressure becomes 1 atm or less.

【0040】図6において、シリコン基板22を水酸化
カリウム水溶液(KOH)でエッチングして、厚みが2
0μmのシリコン薄膜1bなどの薄膜部材に加工する。
このシリコン薄膜1bは、大気圧により凹部2内へ凹も
うとするが、下支持部13aに支えられて凹むことな
く、均一平面を維持している。
In FIG. 6, the silicon substrate 22 is etched with an aqueous solution of potassium hydroxide (KOH) to have a thickness of 2
It is processed into a thin film member such as a 0 μm silicon thin film 1b.
The silicon thin film 1b tries to be recessed into the recess 2 due to the atmospheric pressure, but is maintained by the lower support portion 13a without being recessed and maintains a uniform plane.

【0041】このシリコン薄膜1bの上にポジ型フォト
レジストを塗布する。そして、図1に示す、角速度セン
サ10の機能素子の平面形状を有するポジ型フォトマス
クを用いて、フォトレジストを露光し且つ現像して図1
に示す機能素子の形状を有するレジストマスクを形成す
る。
A positive photoresist is applied on the silicon thin film 1b. The photoresist is exposed and developed using a positive photomask having a planar shape of the functional element of the angular velocity sensor 10 shown in FIG.
A resist mask having the shape of the functional element shown in FIG.

【0042】図7に示すように、前記レジストマスクを
用い、6フッ化硫黄(SF6 )ガスを使用して、RIE
(反応性イオンエッチング)により、シリコン薄膜1b
をドライエッチングする。そして、不要となったレジス
トマスクを酸素O2 アッシングにより除去して、図1に
示す角速度センサ10の機能素子を形成する。即ち、外
可動梁8a、内可動梁9a、振動重り11、12などの
可動部10aおよび固定電極3〜6などの固定部を形成
すると同時に、下支持部13aの上端面にシリコン薄膜
1bの一部を残して中間支持部13bを形成する。
As shown in FIG. 7, RIE is performed using the above-mentioned resist mask and sulfur hexafluoride (SF 6 ) gas.
(Reactive ion etching), silicon thin film 1b
Is dry-etched. Then, the unnecessary resist mask is removed by oxygen O 2 ashing to form the functional element of the angular velocity sensor 10 shown in FIG. That is, the movable portion 10a such as the outer movable beam 8a, the inner movable beam 9a, the movable weights 11 and 12, and the fixed portions such as the fixed electrodes 3 to 6 are formed, and at the same time, the silicon thin film 1b is formed on the upper end surface of the lower support portion 13a. The intermediate support portion 13b is formed leaving the portion.

【0043】図8において、フォトエッチングによりパ
イレックスガラス基板を加工して、支持基板1aと面対
称の形状となるように、凹部2、上支持部13cなどを
有する蓋基板1cを形成する。そして、支持基板1aと
蓋基板1cとを凹部側の面を向かい合わせ、即ち凹部2
と凹部2、下支持部13aと上支持部13cをそれぞれ
対向させて、蓋基板1cとシリコン薄膜1bとを陽極接
合により接合する。この陽極接合は、支持基板1aとシ
リコン基板22との陽極接合の条件に加えるに、例え
ば、真空度が10Paの真空槽中において行われる。
In FIG. 8, a Pyrex glass substrate is processed by photoetching to form a lid substrate 1c having a concave portion 2, an upper support portion 13c, and the like so as to have a plane symmetrical shape with respect to the support substrate 1a. Then, the supporting substrate 1a and the lid substrate 1c face each other on the concave side, that is, the concave 2
The lid substrate 1c and the silicon thin film 1b are bonded by anodic bonding, with the lower support portion 13a and the upper support portion 13c facing each other. This anodic bonding is performed, for example, in a vacuum chamber having a degree of vacuum of 10 Pa in addition to the conditions for anodic bonding between the support substrate 1a and the silicon substrate 22.

【0044】図9において、この陽極接合により、支持
基板1aの凹部2と蓋基板1cの凹部2とは、シリコン
薄膜1bを介して接合されて、減圧された密閉空間2c
が形成される。そして、この密閉空間2cの中には、支
持基板1aの下支持部13a、シリコン薄膜1bの一部
である中間支持部13bおよび蓋基板1cの上支持部1
3cの3層構造よりなる支持体13が形成される。この
支持体13により、大気圧などの外部圧力により支持基
板1aまたは蓋基板1cが密閉空間2c内へ凹むのが防
止される。なお、蓋基板1cの上支持部13cとシリコ
ン薄膜1bの中間支持部13bは接合されているのが好
ましいが、接触していれば完全に接合していなくてもよ
い。
In FIG. 9, the recess 2 of the supporting substrate 1a and the recess 2 of the lid substrate 1c are joined via the silicon thin film 1b by this anodic bonding, and the depressurized closed space 2c
Is formed. In the closed space 2c, a lower support 13a of the support substrate 1a, an intermediate support 13b which is a part of the silicon thin film 1b, and an upper support 1 of the lid substrate 1c.
A support 13 having a three-layer structure 3c is formed. The support 13 prevents the support substrate 1a or the lid substrate 1c from being recessed into the closed space 2c due to an external pressure such as the atmospheric pressure. The upper support portion 13c of the lid substrate 1c and the intermediate support portion 13b of the silicon thin film 1b are preferably joined, but may not be completely joined if they are in contact.

【0045】本発明は、このように支持体13を設ける
ことにより、図1に示す角速度センサ10の厚みを0.
8mmとすることができる。なお、図11に示す従来の
角速度センサ20の厚みは、大気圧に対し強度を保つた
めに、2.0mm必要である。したがって、本発明は、
従来の電子部品に比べて、略40%の厚みを有する電子
部品を実現することができる。
According to the present invention, the thickness of the angular velocity sensor 10 shown in FIG.
It can be 8 mm. The thickness of the conventional angular velocity sensor 20 shown in FIG. 11 needs to be 2.0 mm in order to maintain the strength against the atmospheric pressure. Therefore, the present invention
An electronic component having a thickness of about 40% as compared with a conventional electronic component can be realized.

【0046】[0046]

【発明の効果】請求項1〜請求項4に記載の電子部品に
係る発明は、密閉空間を構成する二つの基板を支持体に
より内部から互い支えているので、外部筐体としての二
つの基板のうち、少なくとも一方を薄くすることができ
て、全体として薄型化、小形化を実現することができる
と共に、大気圧などの外部圧力に対する強度を向上させ
ることができる。
According to the invention relating to the electronic components according to the first to fourth aspects, the two substrates constituting the closed space are supported from the inside by the support, so that the two substrates as the outer casing are provided. At least one of them can be made thinner, so that the overall thickness and size can be reduced, and the strength against external pressure such as atmospheric pressure can be improved.

【0047】特に、二つの基板を支持基板および蓋基板
とし、支持体の材料を支持基板および蓋基板の材料並び
に被封止物形成材料とした場合には、支持基板、蓋基板
および被封止物を形成するときに、3層構造の支持体と
なる各支持部を同時に形成することができて、工程が簡
単となる。
In particular, when the two substrates are a supporting substrate and a lid substrate, and the material of the support is a material of the supporting substrate and the lid substrate and a material for forming the object to be sealed, the supporting substrate, the lid substrate and the object to be sealed are formed. When an object is formed, each support portion serving as a support having a three-layer structure can be formed at the same time, thereby simplifying the process.

【0048】また、請求項5に記載の電子部品の製造方
法に係る発明は、シリコンなどの薄膜部材を一方の基板
に接合したとき、該薄膜部材が、支持部に支えられて大
気圧により凹部内へ凹むことがなく、均一平面を保持で
きるので、精度の高いフォトリソグラフィを行うことが
できて、微細構造を有する電子部品を実現できる。
According to a fifth aspect of the present invention, when a thin film member such as silicon is bonded to one of the substrates, the thin film member is supported by the supporting portion and is depressed by atmospheric pressure. Since a uniform flat surface can be maintained without being depressed inward, highly accurate photolithography can be performed, and an electronic component having a fine structure can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の電子部品の一実施例の角速度センサ
の蓋基板を除外した支持基板および機能素子の平面図
FIG. 1 is a plan view of a support substrate and a functional element of an angular velocity sensor according to an embodiment of the present invention, excluding a cover substrate.

【図2】 支持基板の斜視図FIG. 2 is a perspective view of a support substrate.

【図3】 本発明の電子部品の一実施例の角速度センサ
の製造方法を図1のX−X線断面により示すもので、支
持基板に加工されるパイレックスガラス基板を用意する
工程図
FIG. 3 is a cross-sectional view taken along the line XX of FIG. 1 illustrating a method of manufacturing an angular velocity sensor according to an embodiment of the electronic component of the present invention, and is a process chart for preparing a Pyrex glass substrate to be processed into a support substrate.

【図4】 パイレックスガラス基板を加工して支持基板
を形成する工程図
FIG. 4 is a process diagram of forming a support substrate by processing a Pyrex glass substrate.

【図5】 支持基板の上面にシリコン基板を陽極接合す
る工程図
FIG. 5 is a process diagram of anodically bonding a silicon substrate to an upper surface of a support substrate.

【図6】 シリコン基板を薄く研磨する工程図FIG. 6 is a process diagram for thinly polishing a silicon substrate.

【図7】 シリコン基板を角速度センサの機能素子形状
にエッチングする工程図
FIG. 7 is a process diagram of etching a silicon substrate into a functional element shape of an angular velocity sensor.

【図8】 支持基板と同一形状に加工した蓋基板を支持
基板上に形成されたシリコン薄膜上に配置する工程図
FIG. 8 is a process chart of disposing a lid substrate processed into the same shape as the support substrate on a silicon thin film formed on the support substrate.

【図9】 蓋基板とシリコン薄膜とを陽極接合して、完
成した本実施例の角速度センサの断面形態図
FIG. 9 is a cross-sectional view of the completed angular velocity sensor of the present embodiment obtained by anodically bonding the lid substrate and the silicon thin film.

【図10】 従来の電子部品としての角速度センサの蓋
基板を除外した支持基板および機能素子の平面図
FIG. 10 is a plan view of a supporting substrate and a functional element of the angular velocity sensor as a conventional electronic component, excluding a lid substrate.

【図11】 図10のY−Y線断面形態図11 is a sectional view taken along line YY of FIG.

【符号の説明】[Explanation of symbols]

1a 支持基板 1a’ 凹部を含む支持基板の表面 1b シリコン薄膜 2 凹部 2a 凹み 3〜6 固定電極 3a、4a 固定櫛歯電極 7 固定梁 8a 外可動梁 9a 内可動梁 10 角速度センサ 10a 可動部 11、12 振動重り 11a、12a 可動櫛歯電極 11b、12b 電極 13 支持体 13a 下支持部 13b 中間支持部 13c 上支持部 21 パイレックスガラス基板 22 シリコン基板 1a Support substrate 1a 'Surface of support substrate including concave portion 1b Silicon thin film 2 Recess 2a Depressed 3-6 Fixed electrode 3a, 4a Fixed comb-tooth electrode 7 Fixed beam 8a Outer movable beam 9a Inner movable beam 10 Angular velocity sensor 10a Movable portion 11, DESCRIPTION OF SYMBOLS 12 Vibration weight 11a, 12a Movable comb-teeth electrode 11b, 12b Electrode 13 Support 13a Lower support 13b Intermediate support 13c Upper support 21 Pyrex glass substrate 22 Silicon substrate

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2F055 AA40 BB20 CC12 CC51 DD05 DD07 EE25 FF23 FF43 GG01 GG12 4M112 AA02 BA07 CA26 CA36 DA04 DA15 DA18 EA02 EA13  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2F055 AA40 BB20 CC12 CC51 DD05 DD07 EE25 FF23 FF43 GG01 GG12 4M112 AA02 BA07 CA26 CA36 DA04 DA15 DA18 EA02 EA13

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 二つの基板の間に大気圧以下に減圧した
密閉空間を設け、この密閉空間内に被封止物を収容し、
該密閉空間内の前記二つの基板間に該二つの基板を支え
る少なくとも一つの支持体を備えている電子部品。
An airtight space is provided between two substrates, the airtightness being reduced to an atmospheric pressure or less, an object to be sealed is housed in the airtight space,
An electronic component, comprising: at least one support for supporting the two substrates between the two substrates in the closed space.
【請求項2】 凹部を備えた二つの基板を該凹部側を対
向させて密閉空間を形成し、該密閉空間内に少なくとも
可動部を配置した機能素子を前記基板間に形成し、前記
二つの基板の凹部の底面間に前記機能素子の動作を妨げ
ない位置に、前記二つの基板の底面を支える少なくとも
一つの支持体を備えている電子部品。
2. A closed space is formed by facing two recessed substrates with their recesses facing each other, and a functional element having at least a movable portion disposed in the closed space is formed between the substrates. An electronic component, comprising: at least one support that supports the bottom surfaces of the two substrates at a position between the bottom surfaces of the concave portions of the substrate that does not hinder the operation of the functional element.
【請求項3】 前記支持体が、前記基板と同じ材料で形
成されている請求項1または請求項2に記載の電子部
品。
3. The electronic component according to claim 1, wherein the support is formed of the same material as the substrate.
【請求項4】 前記支持体が、ガラス、シリコン及びガ
ラスの3層構造よりなる請求項1または請求項2に記載
の電子部品。
4. The electronic component according to claim 1, wherein the support has a three-layer structure of glass, silicon, and glass.
【請求項5】 二つの基板に凹部をそれぞれ形成すると
共に該凹部の底面に少なくとも一つの支持部をそれぞれ
植設する工程と、一方の基板の凹部の形成された面側に
薄膜部材を設ける工程と、該薄膜部材を加工して前記凹
部の領域に可動部を有する機能素子を形成すると共に、
前記支持部の先端面に前記薄膜部材の一部を残存させる
工程と、前記二つの基板の凹部および支持部が対向する
ように、他方の基板を薄膜部材に重ねて接合する工程
と、からなる電子部品の製造方法。
5. A step of forming a concave portion on each of two substrates and implanting at least one supporting portion on a bottom surface of each of the concave portions, and a step of providing a thin film member on a surface of the one substrate on which the concave portion is formed. And processing the thin film member to form a functional element having a movable portion in the region of the concave portion,
A step of leaving a part of the thin film member on the distal end surface of the support portion, and a step of overlapping and joining the other substrate to the thin film member so that the concave portion and the support portion of the two substrates face each other. Manufacturing method of electronic components.
JP10182527A 1998-06-29 1998-06-29 Electronic component and manufacture thereof Pending JP2000022170A (en)

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US9564963B2 (en) 1995-06-30 2017-02-07 Interdigital Technology Corporation Automatic power control system for a code division multiple access (CDMA) communications system
JP2002022446A (en) * 2000-07-06 2002-01-23 Murata Mfg Co Ltd External force detection sensor
EP1170595A3 (en) * 2000-07-06 2003-11-26 Murata Manufacturing Co., Ltd. External force detecting sensor
JP2007199081A (en) * 2005-04-06 2007-08-09 Murata Mfg Co Ltd Acceleration sensor
JP2008008820A (en) * 2006-06-30 2008-01-17 Hitachi Ltd Inertial sensor and manufacturing method thereof
JP2010112858A (en) * 2008-11-07 2010-05-20 Sony Corp Micro-electromechanical system and electronic apparatus
JP2011022018A (en) * 2009-07-16 2011-02-03 Mitsubishi Electric Corp Capacitive acceleration sensor
US8505381B2 (en) 2009-07-16 2013-08-13 Mitsubishi Electric Corporation Capacitive acceleration sensor
JP2016163032A (en) * 2015-03-05 2016-09-05 セイコーエプソン株式会社 Semiconductor devices, electronic equipment and mobile objects
JP2019100727A (en) * 2017-11-28 2019-06-24 セイコーエプソン株式会社 Physical quantity sensor, physical quantity sensor device, composite sensor device, inertia measuring device, mobile body positioning device, portable electronic apparatus, electronic apparatus, mobile body, and method for manufacturing physical quantity sensor

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