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JP2000007428A - Zirconyl phosphate-base composite material and precision apparatus using the same - Google Patents

Zirconyl phosphate-base composite material and precision apparatus using the same

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Publication number
JP2000007428A
JP2000007428A JP10198025A JP19802598A JP2000007428A JP 2000007428 A JP2000007428 A JP 2000007428A JP 10198025 A JP10198025 A JP 10198025A JP 19802598 A JP19802598 A JP 19802598A JP 2000007428 A JP2000007428 A JP 2000007428A
Authority
JP
Japan
Prior art keywords
composite material
zirconyl phosphate
thermal expansion
crystal phase
modulus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10198025A
Other languages
Japanese (ja)
Inventor
Noriaki Tateno
範昭 建野
Takahiro Tanaka
貴広 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to JP10198025A priority Critical patent/JP2000007428A/en
Publication of JP2000007428A publication Critical patent/JP2000007428A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a low thermal expansion and high rigidity ceramic material having low specific gravity and a high Young's modulus and further, free from a change in the lapse of time. SOLUTION: When a ceramic composite material contg. zirconyl phosphate as a principal crystal phase and one or more ceramics having a positive coefft. of thermal expansion at an ordinary temp. and >=150 GPa Young's modulus as a secondary crystal phase is produced, and this zirconyl phosphate-base composite material in which the 2nd crystal phase is added so that the coefft. of thermal expansion at the ordinary temp. becomes <=±0.5×10-6/ deg.C, is used, since the resultant zirconyl phosphate-base composite material is free from a change in the lapse of time, is small in a dimensional change due to a temp. change and the increased size of a member because of the high Young's modulus, it can enhance the precision of a precision apparatus such as a semiconductor and liquid crystal producing apparatus of a stepper or the like.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、精密機器用部材の
材質に係り、特に半導体及び液晶製造用装置の部材とし
て好適な低熱膨張・高ヤング率セラミック材料に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material of a member for precision equipment, and more particularly to a ceramic material having a low thermal expansion and a high Young's modulus which is suitable as a member of an apparatus for manufacturing semiconductors and liquid crystals.

【0002】[0002]

【従来の技術】従来、半導体及び液晶製造装置特に露光
装置には、低熱膨張ガラスやインバー合金が、常温にお
ける熱膨張率が低いため多く使用されてきた。一方、低
熱膨張のセラミックに関しては特開昭54−4914号
に見られるように、セラミックの特性を生かした耐熱性
の優れる材料として用いられる場合が多く、この場合は
ヒートショックに耐えるために高温で熱膨張率が低い材
料が求められた。また、リン酸ジルコニルを用いた特開
平6−4510号に見られるように耐熱性を上げるため
に、融点が高いことが求められていた。
2. Description of the Related Art Conventionally, low thermal expansion glass and invar alloys have been widely used in semiconductor and liquid crystal manufacturing apparatuses, especially in exposure apparatuses, because of their low coefficient of thermal expansion at room temperature. On the other hand, low-thermal-expansion ceramics are often used as materials having excellent heat resistance by utilizing the characteristics of ceramics, as seen in JP-A-54-4914. A material having a low coefficient of thermal expansion was required. Also, as disclosed in JP-A-6-4510 using zirconyl phosphate, a high melting point has been required in order to increase heat resistance.

【0003】特開昭54−4914号に見られるものを
詳述すると、以下の通りである。強度の弱い多孔質の低
熱膨張セラミック(例えば、リチウム・アルミニウム・
シリケート、コーデイエライト、アルミニウム・チタネ
ート)に希土類元素の酸化物を添加することにより、緻
密な焼結体を得るという内容である。この場合は、高温
(1000℃)での熱膨張率を測定している。
The details found in JP-A-54-4914 are as follows. Low strength porous low thermal expansion ceramics (for example, lithium aluminum
By adding an oxide of a rare earth element to silicate, cordierite, aluminum titanate), a dense sintered body can be obtained. In this case, the coefficient of thermal expansion at a high temperature (1000 ° C.) is measured.

【0004】[0004]

【発明が解決しようとする課題】従来の低熱膨張ガラス
を例えばステッパー用部材としていた場合では、部材が
大型化した場合や露光の光源として波長の短いKrFエ
キシマレーザー等を使用した場合は、ヤング゛率が低い
(100GPa以下)ため変形し、露光パターンの精度
を悪くする場合がある。インバー等の金属系の低熱膨張
素材は、ヤング率は150GPa程度で、比較的高い
が、比重が大きい(約8g/cc程度)、経時変化をす
るという問題がある。
In the case where the conventional low thermal expansion glass is used as a stepper member, for example, when the member becomes large or when a short wavelength KrF excimer laser or the like is used as a light source for exposure, Young. Since the rate is low (100 GPa or less), deformation may occur, and the accuracy of the exposure pattern may be deteriorated. A metal-based low thermal expansion material such as Invar has a Young's modulus of about 150 GPa, which is relatively high, but has a large specific gravity (about 8 g / cc) and has a problem that it changes with time.

【0005】以上をまとめると、ステッパー等の精密機
器用の部材では、精度を高めるため、常温において低熱
膨張でヤング率の高い、比重の低い材料が強く求められ
ているが、従来用いられていた低熱膨張ガラスやインバ
ー合金では、対応できないレベルになっている。
In summary, in order to improve the accuracy of a member for a precision device such as a stepper, a material having a low thermal expansion at room temperature, a high Young's modulus and a low specific gravity has been strongly demanded. With low thermal expansion glass and Invar alloy, the level cannot be met.

【0006】本発明は、上記課題を解決するためになさ
れたもので、本発明の目的は、比重が小さくヤング率の
高い、さらに経時変化しない、低熱膨張・高剛性セラミ
ック材料を提供することにある。更に、ノンポア化され
た材料に関しては、ガラス材料の代わりに高剛性なミラ
ー材料として使用可能である。
An object of the present invention is to provide a low thermal expansion and high rigidity ceramic material which has a small specific gravity, a high Young's modulus and does not change with time, and which has an object of the present invention. is there. Further, the non-porous material can be used as a highly rigid mirror material instead of a glass material.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
になされた本発明は、主たる結晶相としてリン酸ジルコ
ニル、第二結晶相として常温における熱膨張率がプラス
でヤング率が150GPa以上のセラミックを1種以上
含むセラミック複合材料を作製し、第二結晶相の添加量
を常温における熱膨張率が、±0.5×10-6/℃以下
になるように添加することを特徴としたリン酸ジルコニ
ル系複合材料とした。上記リン酸ジルコニル系複合材料
を用いると、経時変化が無く、ヤング率が高いため温度
変化や部材の大型化による寸法変化が少ないため、ステ
ッパー等の半導体及び液晶製造装置などの精密機器の精
度を高めることが出来る。
Means for Solving the Problems The present invention has been made to solve the above-mentioned problems, and is directed to a ceramic having a main crystal phase of zirconyl phosphate and a second crystal phase having a positive coefficient of thermal expansion at room temperature and a Young's modulus of 150 GPa or more. A ceramic composite material containing at least one of the following, and adding the second crystal phase in such a manner that the coefficient of thermal expansion at room temperature is ± 0.5 × 10 −6 / ° C. or less. A zirconyl acid-based composite material was obtained. When the above zirconyl phosphate composite material is used, there is no change with time and the Young's modulus is high, so there is little dimensional change due to temperature changes and large-sized members, so the precision of semiconductors such as steppers and precision equipment such as liquid crystal manufacturing equipment is reduced. Can be enhanced.

【0008】さらに、ホットプレス、HIP(熱間静水
圧圧縮成形)といった加圧焼結法を用いると、さらに低
い温度で焼成可能であり、ポアのない微粒なヤング率の
高い焼結体を得られる。
Further, when a pressure sintering method such as hot pressing or HIP (hot isostatic pressing) is used, sintering can be performed at a lower temperature, and a fine sintered body having no pores and a high Young's modulus can be obtained. Can be

【0009】[0009]

【発明の実施の形態】この発明はリン酸ジルコニルを主
体とし、常温における熱膨張率の小さい、ヤング率の高
いセラミック材料に関するものである。リン酸ジルコニ
ルは低熱膨張であることは、公知である。従来、リン酸
ジルコニルは、低熱膨張をいかした耐熱衝撃性の優れた
耐熱材料としての用途しか考えられてこなかった。ま
た、耐熱衝撃性をあげるためには、ヤング率の低い方が
有利であることや、原料代が他の低熱膨張セラミックと
比較して高価なため、十分に研究されてこなかった。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a ceramic material mainly composed of zirconyl phosphate, having a small coefficient of thermal expansion at room temperature and a high Young's modulus. It is known that zirconyl phosphate has a low thermal expansion. Conventionally, zirconyl phosphate has been considered only as a heat-resistant material having excellent thermal shock resistance utilizing low thermal expansion. Further, in order to increase the thermal shock resistance, a low Young's modulus is advantageous, and the raw material cost is more expensive than other low thermal expansion ceramics.

【0010】本特許の目的である常温において低熱膨張
でヤング率の高いセラミックを得るため、詳細に調査し
た結果、リン酸ジルコニルは、一般に言われている低熱
膨張セラミックの中では比較的強度が高く、常温で熱膨
張率がマイナスであるため、熱膨張率がプラスの材料と
組み合わせることで、熱膨張率をゼロに出来ると同時
に、ヤング率の高い材料との組み合わせにより、常温に
おける熱膨張率±0.5×10-6/℃の範囲内で、高ヤ
ング率の部材を得ることが出来る。
In order to obtain a ceramic having a low thermal expansion and a high Young's modulus at room temperature, which is the object of the present patent, a detailed investigation has shown that zirconyl phosphate has relatively high strength among generally-known low thermal expansion ceramics. Because the coefficient of thermal expansion at room temperature is negative, the coefficient of thermal expansion can be made zero by combining with a material having a positive coefficient of thermal expansion, and at the same time, by combining with a material having a high Young's modulus, the coefficient of thermal expansion at room temperature ± Within the range of 0.5 × 10 −6 / ° C., a member having a high Young's modulus can be obtained.

【0011】耐熱性を高めるには高温で焼成する必要が
あるが、本特許の目的である高ヤング率や常温での低熱
膨張率を達成するには、焼成温度を下げる方が好まし
い。リン酸ジルコニルの場合、粒径が7μmを越えると
マイクロクラックが入り、これは、ヤング率を下げると
同時に熱膨張率を不安定にする。粒成長を防止するに
は、焼結温度が低い方が有利である。また、焼成温度が
高くなると、結晶相から、液相への溶解量が増加し、結
晶相の分解が進むと同時に、粒界のガラス相が増加す
る。このことは、ヤング率の低下及び熱膨張率の増加を
もたらす。そのため、緻密な焼結体が得られる範囲で、
焼成温度を下げる必要がある。
Although it is necessary to bake at a high temperature to increase heat resistance, it is preferable to lower the baking temperature in order to achieve a high Young's modulus and a low coefficient of thermal expansion at room temperature, which are the objects of the present invention. In the case of zirconyl phosphate, when the particle size exceeds 7 μm, microcracks occur, which lowers the Young's modulus and makes the coefficient of thermal expansion unstable. To prevent grain growth, a lower sintering temperature is advantageous. In addition, when the firing temperature increases, the amount of dissolution from the crystal phase to the liquid phase increases, and the decomposition of the crystal phase proceeds, and at the same time, the glass phase at the grain boundaries increases. This results in a decrease in Young's modulus and an increase in coefficient of thermal expansion. Therefore, as long as a dense sintered body can be obtained,
It is necessary to lower the firing temperature.

【0012】従来の焼成条件は、1400℃以上である
が、本発明では、原料の性状や組成の適正化や、加圧焼
結により、1300℃以下で緻密に焼結でき、それは本
発明の目的達成のためには有効と思われる。また、本発
明の用途である精密装置部材は、大型のものを製造する
必要があり、大物製造のためにも焼成温度が低いことは
好ましい。
The conventional sintering condition is 1400 ° C. or higher, but in the present invention, the material can be densely sintered at 1300 ° C. or lower by optimizing the properties and composition of the raw materials and by pressure sintering. It seems to be effective for achieving the purpose. In addition, it is necessary to manufacture a large-sized precision device member which is an application of the present invention, and it is preferable that the firing temperature is low for manufacturing a large-sized product.

【0013】[0013]

【実施例】<実施例1>原料は、オキシ塩化ジルコニウ
ムとリン酸を2ZrO2・P25組成比で各々水溶液と
し徐々に混合して、共沈させた後、仮焼・粉砕により得
た。得られた粉末の性状は、純度99%以上、90%以
上がα(ZrO)227で、平均粒径は、1.1μm
最大粒径は約5μであった。これに第2結晶相として、
酸化物としては、平均粒径1μm前後のジルコンや平均
粒径0.3μmのジルコニアその他アルミナ、ムライト
等が考えられ、この場合は、大気中で焼成出来るため大
型品を比較的安く作ることが出来る。そのほか、第2結
晶相としては、SiC・TiC等の炭化物セラミック、
及び、窒化珪素・サイアロン・TiN等の窒化物セラミ
ックを複合化することも有効と思われる。ただし、炭化
物、窒化物を第2結晶相とする場合は、酸化のため大気
中焼成が出来ないので、真空焼成等の焼成方法を工夫す
る必要がある。これらの主原料に、焼結助剤、粒成長抑
制剤として、粒径1μm前後のZnO,MgO,Nb2
5等及びSiO2粉末等をそれぞれ添加して、ボールミ
ルで十分混合した。また、ケイ酸ジルコニウム等のケイ
酸塩を第2結晶相として採用した場合は、必ずしも、S
iO2粉末の添加は必要ない。第2結晶相としては表1
に示す調合物の混合物100重量部に10%のPVA水
溶液を5重量部添加して十分に混合し、10×60×1
0mmの金型にて100kg/cm2の圧力でプレス成
形後、1ton/cm2にてラバープレスを行い成形体
を作った。
EXAMPLES <Example 1> Raw materials were obtained by mixing zirconium oxychloride and phosphoric acid in an aqueous solution at a composition ratio of 2ZrO 2 · P 2 O 5 gradually and coprecipitating them, followed by calcining and pulverization. Was. The powder obtained had a purity of 99% or more, 90% or more of α (ZrO) 2 P 2 O 7 and an average particle size of 1.1 μm.
The maximum particle size was about 5μ. As a second crystal phase,
As the oxide, zircon having an average particle diameter of about 1 μm, zirconia having an average particle diameter of 0.3 μm, other alumina, mullite, and the like can be considered. In this case, a large product can be made relatively cheaply because it can be fired in the air. . In addition, as the second crystal phase, carbide ceramic such as SiC / TiC,
It is also considered effective to compound a nitride ceramic such as silicon nitride, sialon, or TiN. However, when carbide or nitride is used as the second crystal phase, it is necessary to devise a firing method such as vacuum firing because firing in the atmosphere cannot be performed due to oxidation. ZnO, MgO, Nb 2 having a particle size of about 1 μm are used as a sintering aid and a grain growth inhibitor in these main raw materials.
O 5 and the like, SiO 2 powder and the like were added and mixed well by a ball mill. When a silicate such as zirconium silicate is used as the second crystal phase, S
No addition of iO 2 powder is required. Table 1 shows the second crystal phase.
5 parts by weight of a 10% aqueous PVA solution were added to 100 parts by weight of the mixture of the preparation shown in
After press molding with a 0 mm mold at a pressure of 100 kg / cm 2 , rubber pressing was performed at 1 ton / cm 2 to form a molded body.

【0014】[0014]

【表1】 [Table 1]

【0015】この成形体を電気炉にて100℃/hrで
昇温し、焼成温度で3時間保持後炉冷し、焼結体を得
た。この焼結体を加工し、粒成長に伴うマイクロクラッ
クのある焼結体に関しては、加工時にカケやワレが発生
し評価できなかったが、クラックの無いものに関して
は、それぞれの評価項目にあった試験片を作製し、3点
曲げ強度、比重、ヤング率、常温における熱膨張率を測
定した。評価結果は、表1の通りである。尚、表1中の
マイクロクラックの有無でNGは、加工中のカケ・ワレ
により評価サンプルが出来なかったため、特性値の評価
ができなかったことを示し、OKは加工が問題なく出来
たことを示す。
The molded body was heated in an electric furnace at 100 ° C./hr, kept at the firing temperature for 3 hours, and cooled in the furnace to obtain a sintered body. This sintered body was processed and, for a sintered body having microcracks accompanying grain growth, chips and cracks occurred during processing and could not be evaluated, but those without cracks were in each evaluation item. Test pieces were prepared, and the three-point bending strength, specific gravity, Young's modulus, and coefficient of thermal expansion at room temperature were measured. The evaluation results are as shown in Table 1. In addition, NG in Table 1 indicates that the evaluation sample could not be formed due to chipping and cracking during processing, and the evaluation of the characteristic value could not be performed. Show.

【0016】表1中のリン酸ジルコニル自体の常温にお
ける熱膨張率は、−0.7×10-6/℃である。第2結
晶相のヤング率は、ZrSiO4は、210GPa以上
で、SiO2は、80GPa、ZrO2は、210GPa
である。リン酸ジルコニル自体は常温における熱膨張率
が−0.5×10-6/℃より小さいが、常温における熱
膨張率がプラスでヤング率が150GPa以上で適切な
第2結晶相と複合化することにより、狙った熱膨張率
(±0.5×10-6/℃以下)が得られる。また、ヤン
グ率の低い材料と複合化すると、ヤング率は下がるが、
ヤング率が高い材料と複合化することで、ヤング率の高
い複合材料が得られる。
The coefficient of thermal expansion of zirconyl phosphate in Table 1 at room temperature is -0.7 × 10 -6 / ° C. The Young's modulus of the second crystal phase is 210 GPa or more for ZrSiO 4 , 80 GPa for SiO 2 , and 210 GPa for ZrO 2 .
It is. Zirconyl phosphate itself has a coefficient of thermal expansion at room temperature of less than -0.5 × 10 −6 / ° C., but has a positive coefficient of thermal expansion at room temperature and a Young's modulus of 150 GPa or more and is compounded with an appropriate second crystal phase. As a result, an intended coefficient of thermal expansion (± 0.5 × 10 −6 / ° C. or less) can be obtained. When compounded with a material having a low Young's modulus, the Young's modulus decreases,
By forming a composite with a material having a high Young's modulus, a composite material having a high Young's modulus can be obtained.

【0017】<実施例2>実施例1で得られた焼結体の
一部に関してHIPを実施した。HIPは、圧力100
0気圧、最高温度での保持時間は1hr、昇温速度は1
00℃/hrで実施した。調合組成及び評価結果を表2
に示す。
<Example 2> A portion of the sintered body obtained in Example 1 was subjected to HIP. HIP has a pressure of 100
The holding time at 0 atm and the maximum temperature is 1 hr, and the heating rate is 1
The test was performed at 00 ° C./hr. Table 2 shows the composition and evaluation results.
Shown in

【0018】[0018]

【表2】 [Table 2]

【0019】表2中のリン酸ジルコニル自体の常温にお
ける熱膨張率は、−0.7×10-6/℃である。第2結
晶相のヤング率は、ZrSiO4は、210GPa以上
で、ZrO2は、210GPaである表2から、同じ組
成でもHIPすることにより、実施例1より比重、及
び、ヤング率が増大することが分かる。これは、HIP
によりポアが無くなり、緻密化することによると考えら
れる。
The coefficient of thermal expansion of zirconyl phosphate itself in Table 2 at room temperature is -0.7 × 10 -6 / ° C. The Young's modulus of the second crystal phase is that ZrSiO 4 is 210 GPa or more, and ZrO 2 is 210 GPa. From Table 2, it can be seen that the specific gravity and the Young's modulus are higher than those of Example 1 by performing HIP even with the same composition. I understand. This is HIP
It is considered that pores are eliminated and the density is increased.

【0020】<実施例3>原料粉末及びその混合に関し
ては、実施例1と同様に実施した。得られた混合粉末を
50×50mmのカーボン型内に高さ20mmに充填
し、100℃/hrで昇温しながら、加圧力0.5kg/
cm2で、最高温度で1hr保持し、ホットプレスを実
施した。調合組成は表3の通りである。加工及び評価内
容は、実施例1と同様で、評価結果は表3に示す。
Example 3 The same procedure as in Example 1 was carried out for the raw material powders and the mixing thereof. The obtained mixed powder is filled into a 50 × 50 mm carbon mold at a height of 20 mm, and while the temperature is increased at 100 ° C./hr, a pressure of 0.5 kg /
The temperature was kept at the maximum temperature for 1 hour at a temperature of cm 2 and hot pressing was performed. The composition is shown in Table 3. Processing and evaluation contents are the same as in Example 1, and the evaluation results are shown in Table 3.

【0021】[0021]

【表3】 [Table 3]

【0022】表3中のリン酸ジルコニル自体の常温にお
ける熱膨張率は、−0.7×10-6/℃である。第2結
晶相のヤング率は、ZrSiO4は、210GPa以上
で、SiCは、44GPa、ZrO2は、210GPa
である表3より、ホットプレスにより、低温で緻密な焼
結体が得られることが分かる。
The coefficient of thermal expansion of zirconyl phosphate itself in Table 3 at room temperature is -0.7 × 10 -6 / ° C. The Young's modulus of the second crystal phase is 210 GPa or more for ZrSiO 4 , 44 GPa for SiC, and 210 GPa for ZrO 2 .
Table 3 shows that a dense sintered body can be obtained at a low temperature by hot pressing.

【0023】<実施例4>原料粉末及びその混合に関し
ては、実施例1と同様に実施した。得られた混合粉末を
鉄製の内径40mm高さ100mm容器(厚み3mm)
に封入して、シールHIPを行った。通常のセラミック
でシールHIPを行う場合は、ガラスを溶融してシール
を行うため、非常に手間がかかる。しかし、本発明の材
料では、1300℃以下で焼結可能なものもあり、この
場合は、上記の通り鉄製の容器に詰めれば良いため、シ
ールHIPも容易に実施できる。加工及び評価内容は、
実施例1と同様で、評価結果は表3に示す。
Example 4 The same procedure as in Example 1 was carried out for the raw material powder and the mixing thereof. The obtained mixed powder is made of an iron container having an inner diameter of 40 mm and a height of 100 mm (thickness of 3 mm).
And sealed HIP was performed. When sealing HIP is performed using ordinary ceramics, the glass is melted and sealed, which is very troublesome. However, some of the materials of the present invention can be sintered at a temperature of 1300 ° C. or lower. In this case, the seal HIP can be easily performed because the material may be packed in an iron container as described above. Processing and evaluation contents,
As in Example 1, the evaluation results are shown in Table 3.

【0024】[0024]

【表4】 [Table 4]

【0025】表4中のリン酸ジルコニル自体の常温にお
ける熱膨張率は、−0.7×10-6/℃である。第2結
晶相のヤング率は、ZrSiO4は、210GPa以上
で、Si34は、310GPaである表4より、シール
HIPにより、低温で緻密な焼結体が得られることが分
かる。
The coefficient of thermal expansion of zirconyl phosphate itself in Table 4 at room temperature is -0.7 × 10 -6 / ° C. The Young's modulus of the second crystal phase is 210 GPa or more for ZrSiO 4 and 310 GPa for Si 3 N 4. From Table 4, it can be seen that a dense sintered body can be obtained at a low temperature by the seal HIP.

【0026】[0026]

【発明の効果】本発明は以上のように、リン酸ジルコニ
ルをベースに適切な複合材料とすることで、低熱膨張・
高ヤング率の素材が得られ、低熱膨張ガラスに対して
は、ヤング率が大幅に優れ、インバー合金に対しては、
経時変化が無く、比重が低い、ヤング率が高いという特
徴のある精密装置用部材、特に半導体及び液晶製造用装
置の部材として好適な部材を得ることが出来る。
As described above, according to the present invention, by forming a suitable composite material based on zirconyl phosphate, low thermal expansion and low thermal expansion can be obtained.
A material with a high Young's modulus can be obtained, the Young's modulus is significantly superior for low thermal expansion glass, and for Invar alloy,
It is possible to obtain a member suitable for precision equipment, which is characterized by having no change over time, a low specific gravity, and a high Young's modulus, especially a member for semiconductor and liquid crystal manufacturing equipment.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 主たる結晶相としてリン酸ジルコニル、
第二結晶相として常温における熱膨張率がプラスでヤン
グ率が150GPa以上のセラミック相を1種以上含
み、リン酸ジルコニルと第2結晶相の比率を調整し、常
温における熱膨張率が、±0.5×10-6/℃以下であ
ることを特徴とするリン酸ジルコニル系複合材料。
1. A zirconyl phosphate as a main crystal phase,
As a second crystal phase, one or more ceramic phases having a positive coefficient of thermal expansion at room temperature and a Young's modulus of 150 GPa or more are included, and the ratio of zirconyl phosphate to the second crystal phase is adjusted. A zirconyl phosphate-based composite material having a temperature of 5 × 10 −6 / ° C. or less.
【請求項2】 主たる結晶相としてリン酸ジルコニル、
第二結晶相として常温における熱膨張率がプラスでヤン
グ率が150GP以上のセラミックを1種以上、焼結助
剤としてZnO、MgOを0.2%以上、粒成長抑制剤
としてシリカを0.2%以上含み、リン酸ジルコニルと
第2結晶相の比率を調整し、常温における熱膨張率が、
±0.5×10-6/℃以下であることを特徴とするリン
酸ジルコニル系複合材料。
2. Zirconyl phosphate as a main crystal phase,
One or more ceramics having a positive thermal expansion coefficient at room temperature and a Young's modulus of 150 GP or more as the second crystal phase, ZnO and MgO as sintering aids of 0.2% or more, and silica as a grain growth inhibitor of 0.2% or more. %, The ratio of zirconyl phosphate to the second crystal phase is adjusted, and the coefficient of thermal expansion at room temperature is
A zirconyl phosphate-based composite material having a temperature of ± 0.5 × 10 −6 / ° C. or less.
【請求項3】 上記第二結晶相がケイ酸ジルコニウムを
5〜60wt%であることを特徴とする請求項1、2い
ずれか記載のリン酸ジルコニル系複合材料。
3. The zirconyl phosphate composite material according to claim 1, wherein the second crystal phase contains 5 to 60 wt% of zirconium silicate.
【請求項4】 上記リン酸ジルコニル系複合材料を13
00℃以下で焼結したことを特徴とする請求項1〜3い
ずれか記載のリン酸ジルコニル系複合材料。
4. The method according to claim 1, wherein the zirconyl phosphate composite material is 13
The zirconyl phosphate composite material according to any one of claims 1 to 3, wherein the zirconyl phosphate composite material is sintered at a temperature of 00C or lower.
【請求項5】 上記リン酸ジルコニル系複合材料を13
00℃以下で焼結した後、HIP、又は、1300℃以
下でシールHIP、もしくは、ホット・プレスをするこ
とを特徴とする請求項1〜3いずれか記載のリン酸ジル
コニル系複合材料
5. The method according to claim 1, wherein the zirconyl phosphate-based composite material is 13
The zirconyl phosphate composite material according to any one of claims 1 to 3, wherein after sintering at a temperature of 00 ° C or lower, HIP or a seal HIP or a hot press at 1300 ° C or lower is performed.
【請求項6】 請求項1〜5いずれか記載のリン酸ジル
コニル系複合材料を精密機器部材に用いたことを特徴と
する精密機器。
6. A precision instrument using the zirconyl phosphate composite material according to claim 1 for a precision instrument member.
JP10198025A 1998-06-29 1998-06-29 Zirconyl phosphate-base composite material and precision apparatus using the same Pending JP2000007428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10198025A JP2000007428A (en) 1998-06-29 1998-06-29 Zirconyl phosphate-base composite material and precision apparatus using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10198025A JP2000007428A (en) 1998-06-29 1998-06-29 Zirconyl phosphate-base composite material and precision apparatus using the same

Publications (1)

Publication Number Publication Date
JP2000007428A true JP2000007428A (en) 2000-01-11

Family

ID=16384281

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001058867A (en) * 1999-08-23 2001-03-06 Taiheiyo Cement Corp Structure part
KR20150129416A (en) * 2014-05-12 2015-11-20 목포대학교산학협력단 Synthesis of Low-Thermal-Expansion (ZrO)2P2O7 powders

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001058867A (en) * 1999-08-23 2001-03-06 Taiheiyo Cement Corp Structure part
KR20150129416A (en) * 2014-05-12 2015-11-20 목포대학교산학협력단 Synthesis of Low-Thermal-Expansion (ZrO)2P2O7 powders
KR101583415B1 (en) * 2014-05-12 2016-01-07 목포대학교산학협력단 Synthesis of Low-Thermal-Expansion (ZrO)2P2O7 powders

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