JP2000087225A - Vacuum deposition equipment - Google Patents

Abstract

(57) Abstract: Provided is a vacuum film forming apparatus capable of detecting an atmosphere in a vacuum chamber and predicting a state of a thin film formed on a film-forming target in advance. A plasma beam is generated into a vacuum chamber by a plasma gun of a vacuum film forming apparatus. A short tube portion 12A protrudes toward the outlet of the plasma gun 11, and a focusing coil 18 is provided so as to surround the short tube portion 12A. Plasma beam 22
As a result, the film forming material 20 in the crucible 19 evaporates, and a thin film is formed on the substrate 13 by the evaporated film forming material 20. The atmosphere in the vacuum chamber 12 is detected by the mass spectrometer 55, and the control unit 58 is controlled based on a signal from the mass spectrometer 55.
Thus, the regulating valve 57 of the oxygen supply pipe 43 is controlled.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum film forming apparatus for forming a thin film made of a film forming material on an object.

[0002]

2. Description of the Related Art Conventionally, in order to form a thin film made of a film-forming material on a film-forming body, a vacuum chamber in which the film-forming body is arranged and a plasma beam are generated, and this plasma beam is placed in the vacuum chamber. A vacuum film forming apparatus including a plasma gun for feeding and a focusing coil for focusing a plasma beam generated from the plasma gun is used.

In such a vacuum film forming apparatus, a plasma beam generated from a plasma gun is sent into a vacuum chamber, and irradiates a film forming material in a crucible provided in the vacuum chamber. After the film-forming material irradiated with the plasma beam evaporates, it is vapor-deposited on the film-forming target to form a thin film. In this case, the crucible in the vacuum chamber is in an electrically floating state.

[0004]

In a conventional vacuum film forming apparatus, the atmosphere in the vacuum chamber is made of Ar gas as a discharge gas or O ₂ gas when oxygen is supplied. Atmosphere, especially the amount of O ₂ gas, greatly affects the state of the thin film formed on the film-forming target.

In such a case, it is convenient to form a stable thin film if the atmosphere in the vacuum chamber is detected in advance.

[0006] The present invention has been made in view of the above points, and it is an object of the present invention to provide a vacuum film forming apparatus capable of detecting an atmosphere in a vacuum chamber in advance.

[0007]

According to the present invention, there is provided a crucible accommodating a film-forming material therein, a film-forming body disposed therein, a grounded vacuum chamber, and a plasma beam generated by the plasma beam. A plasma gun sent into a vacuum chamber and a plasma beam generated by the plasma gun are irradiated on a film forming material in a crucible whose orbit and / or shape is controlled by a magnetic field, and the film forming material is deposited on a film forming object. A vacuum film forming apparatus comprising: a focusing coil; and a mass spectrometer for analyzing an atmosphere in a vacuum chamber.

According to the present invention, the state of a thin film formed on a film-forming object can be predicted in advance by detecting the atmosphere in a vacuum chamber by a mass spectrometer in advance.

[0009]

Next, an embodiment of the present invention will be described.

First, referring to FIG. 2, an outline of the entire system in which the vacuum film forming apparatus 10 according to the present invention is incorporated will be described. First, a substrate (film formation object) provided on the table 51
13 is conveyed into the load lock chamber 52, and is heated in the load lock chamber 52 by the heating device 52a. In this case, the load lock chamber 52 is sucked by the vacuum pump 53.

The substrate 13 in the load lock chamber 52 is then transferred to the upper portion 54 of the vacuum film forming apparatus 10, and in the upper portion 54 of the vacuum film forming apparatus 10, a thin film is formed on the lower surface of the transferred substrate 13. Is formed. The transfer speed of the substrate 13 is measured by the transfer speed meter 54a. Further, the vacuum film forming apparatus 10 includes a vacuum chamber 12
And a plasma gun 11. Further, the inside of the vacuum chamber 12 is sucked by a vacuum pump 56, and a mass spectrometer 55 for analyzing the atmosphere in the vacuum chamber 12 is connected to the vacuum chamber 12.

[0012]

Next, the vacuum film forming apparatus 10 will be described in detail with reference to FIG. The vacuum film forming apparatus 10 is attached to the vacuum chamber 12 that is sucked by the vacuum pump 56 and grounded as described above, and is attached to the vacuum chamber 12 via the short tube portion 12A, and generates the plasma beam 22. And a plasma gun 11 for supplying a plasma beam 22 into the vacuum chamber 12. Vacuum chamber 1
The substrate 13 transported from the load lock chamber 52 is disposed in the upper portion 54 of the zero. In this case, the substrate 13
Is, for example, low alkali glass (Corning 17
37 glass 550 × 650 × 0.9 t), and an ITO film 6 on a liquid crystal color filter 65.
1 to form a color filter 62 for a liquid crystal display (FIG. 13A).

Further, as described later, a film 13a (Lumirror S-10 manufactured by Toray Industries, Inc., having a thickness of 12 μm and a width of 600 μm) is used.
The barrier film 64 may be formed by forming an SiO film 63 on the substrate (mm, length 5000 m) (FIG. 13B).

That is, the supply roller 67a is used as a film-forming object.
May be used, and the synthetic resin film 13a wound around the winding roller 67b via the coating drum 66 may be used (FIG. 15). As shown in FIG. 15, the inside of the vacuum chamber 12 is partitioned by a partition
5, a coating drum 66 is provided. The vacuum film forming apparatus 10 shown in FIG.
, Except that a synthetic resin film 13a wound around a coating drum 66 is used, and the rest is substantially the same as the vacuum film forming apparatus shown in FIG.

Referring to FIG. 15, a synthetic resin film 13a such as a PET film is
Is wound, and a thin film 61 of ITO or a thin film 63 of SiOx can be formed on the lower surface of the film 13a. In addition, a color film may be used as a film formation object.

As shown in FIG. 1, a plasma gun 11 includes an annular cathode 15 connected to a negative side of a discharge power source 14.
And a ring-shaped first intermediate electrode 16 and a second intermediate electrode 17 connected to the plus side of the discharge power source 14 via a resistor. Discharge gas (Ar) is supplied from the cathode 15 side. In a plasma state and flows out from the second intermediate electrode 17 into the vacuum chamber 12.

Further, the vacuum chamber 12 and the second intermediate electrode 1
7, the short tube portion 12A is provided outside the short tube portion 12A.
A focusing coil 18 is provided so as to surround. The converging coil 18 controls the trajectory and / or shape of the plasma beam 22 by a magnetic field. Examples of such control include control of the plasma beam 22 such as convergence, flattening of the plasma beam 22, and drawing into the crucible. Can be considered. In addition, a crucible 19 that is in an electrically floating state is disposed at a lower portion in the vacuum chamber 12, and a film forming material 20 that is a thin film material is stored on the crucible 19. Further, the crucible magnet 21 is provided inside the crucible 19.
Is provided.

As shown in FIG. 1, an insulating tube 1 protrudes from the outlet of the plasma gun 11 into the short tube portion 12A. The insulating tube 1 surrounds the periphery of the plasma beam 22 and is separated from the plasma gun 11. It is electrically floating. In addition, in the short tube portion 12 A connected to the vacuum chamber 12, the outer periphery of the insulating tube 1 is surrounded, and connected to the plus side of the discharge power supply 14, the electron return to a higher potential state than the outlet of the plasma gun 11. An electrode 2 is provided. In addition,
As the insulating tube 1, for example, a ceramic short tube is adopted.

Further, on the inner surface of the vacuum chamber 12, there is provided a deposition-preventing plate 40 which is electrically floating from the vacuum chamber 12. The deposition-preventing plate 40 is made of a SUS plate, and a plasma beam 2 described later is used for a film forming material (IT
O) It is intended to prevent the reflected electron flow 3 generated when irradiating 20 from being returned to the vacuum chamber 12 and grounded. Instead of providing the deposition-preventing plate 40, an insulating coating film (not shown) for preventing the reflected electron flow from returning to the vacuum chamber 12 on the inner surface of the vacuum chamber 12.
May be provided.

In the vacuum chamber 12, a film forming speed meter 41 for measuring a forming speed of a thin film formed on the substrate 13 is provided near the substrate 13, and below the film forming speed meter 41, a vacuum chamber is provided. A vacuum gauge 42 for measuring the degree of vacuum and the degree of vacuum for film formation in 12 is provided. Further, an oxygen supply pipe 43 having an adjustment valve 57 is provided near the crucible 19 in the vacuum chamber 12.

The control valve 57 is connected to a control unit 58, and the control unit 58 controls the control valve 57 based on a signal from the mass spectrometer 55.

The discharge power source 14 further includes a plasma gun 1
1 is connected to a plasma gun ammeter 45 and a plasma gun voltmeter 46 for measuring the current value and the voltage value, respectively. The electron return electrode 2 is connected to an electron return electrode ammeter 47 for measuring the electron return electrode current. I have. Furthermore, between the vacuum chamber 12 and the earth 60, the vacuum chamber 1
A grounding ammeter 48 for measuring the grounding current from 2 is provided.

The above-mentioned plasma gun ammeter 45,
The measured values from the plasma gun voltmeter 46, the electron return electrode ammeter 47, the grounding ammeter 48, the film forming speed meter 41, the vacuum gauge 42, and the transport speed meter 54 a are collected by a measured value collecting unit 44.
And in this measurement collection unit 44,
The measured values described above are collectively stored, and the film forming process can be appropriately managed.

Next, the operation of the present embodiment having the above configuration will be described. First, the case where the film forming material 20 is ITO will be described. A film forming material 20 made of ITO pellets is stored in the crucible 19. The substrate 13 heated to, for example, 190 ° by the heating device 52 a in the load lock chamber 52 is introduced into the vacuum chamber 12.
Next, the plasma gun 11 is operated by the discharge power source 14, and a plasma beam 22 is formed from the second intermediate electrode 17 of the plasma gun 11 toward the film-forming material 20 made of ITO. Irradiated. In this case, the film forming material 20 in the crucible 19 evaporates,
The evaporated film-forming material 20 is ionized and vapor-deposited on the lower surface of the substrate 13, and a thin film 61 of ITO (FIG. 13) is formed on the lower surface of the substrate 13.
(A)) is formed. During this time, the converging coil 18 acts on the plasma beam 22 to contract the cross section of the plasma beam 22, and the crucible magnet 21 focuses on the plasma beam 22 and the plasma beam 2.
2 is bent. In addition, the plasma beam 2
2 is applied to the film-forming material 20 in the crucible 19, and when the film-forming material 20 evaporates, oxygen is simultaneously supplied to the film-forming material (ITO) 20 evaporating from the oxygen supply pipe 43, and Increase oxygen concentration.

In this way, the I
By forming the thin film 61 of TO, a color filter 62 for a liquid crystal display can be manufactured.
3 (a)). Here, ITO will be described in detail.

ITO (indium tin oxide) is made of In ₂
O ₃ powder (about several μm) and SnO ₂ powder (several μm)
And sintering. The ITO thin film 61 is a transparent conductive thin film having a visible light transmittance of 85% or more. Thus, the ITO thin film 61 has excellent antistatic properties and functions as an electrode or a power wave shield.

The ITO thin film 61 is formed on the glass substrate 13.
The value of the resistivity can be 1.0 to 1.4 × 10 ⁻⁴ Ω · cm, and the optimum value is the resistivity of 1.05 × 10 ⁻⁴ Ω · cm.
Can be taken. The ITO thin film 61 can have a resistivity of 3 × 10 ⁻⁴ Ω · cm on a synthetic resin film 13a (FIG. 13B) described later. On the other hand, an ITO thin film formed on a substrate by ordinary sputtering is required to have a resistivity of 2.0 × 10 ⁻⁴ Ω · m and to heat the substrate to 300 ° or more.

Next, the characteristics of the ITO thin film 61 when oxygen is supplied from the oxygen supply pipe 43 to ITO evaporated from the crucible 19 will be described with reference to FIG.

As shown in FIG. 14A, when the oxygen flow rate is increased to enrich the oxygen of the ITO, the resistivity (Ω · cm) of the ITO thin film 61 gradually increases and then increases. The visible light transmittance (%) gradually rises and is flattened (marked with □ in FIG. 14A). FIG.
As is clear from the result of (a), by changing the oxygen flow rate from the oxygen supply pipe 43, the desired resistivity (Ω
Cm) or a thin film 61 of ITO having a visible light transmittance (%).

Next, adjustment of the flow rate of oxygen from the oxygen supply pipe 43 will be described. During the operation of the vacuum film forming apparatus 10, the atmosphere in the vacuum chamber 12 is analyzed by the mass spectrometer 55, and the atmosphere in the vacuum chamber 12, in particular, Ar gas as a discharge gas, O ₂ gas from the oxygen supply pipe 43, vacuum Leak gas such as H ₂ O and N ₂ into the chamber 12;
The amount of gas released from the wall is determined.

A signal from the mass spectrometer 55 is sent to the control unit 58, and the control unit 58 controls the regulating valve 57 so that the oxygen gas amount in the vacuum chamber 12 can be set to a desired value.

As described above, when the desired oxygen flow rate is predetermined according to FIG.
The control unit 58 appropriately controls the regulating valve 57 in consideration of both the oxygen flow rate and the signal from the mass spectrometer 55 shown in FIG. As a result, an ITO thin film 61 having desired properties can be obtained.

The plasma beam 22 is applied to the crucible 19
When the film material (ITO) 20 in the inside is irradiated, the plasma beam 22 is reflected from the film material 20 to generate a reflected electron flow 3. In this case, since the deposition prevention plate 40 electrically floating from the vacuum chamber 12 is provided on the inner surface of the vacuum chamber 12, the deposition prevention plate 40 prevents the reflected electron stream 3 from returning to the vacuum chamber 12 side. Therefore, most of the reflected electron flow 3 can be reliably returned to the electron return electrode 2 through the outside of the plasma beam 22.

Next, the flow of the reflected electron stream 3 will be described in more detail. As shown in FIG. 11, since the electron return electrode 2 is provided at a position away from the crucible 19, the crucible 19
The film material 20 evaporated from above is less likely to adhere to the electron return electrode 2. Further, since the insulating tube 1 is provided between the plasma beam 22 emitted from the plasma gun 11 and the electron return electrode 2 to block both, the plasma beam 2
2 is incident on the electron return electrode 2 to prevent an abnormal discharge from being generated between the cathode 15 and the electron return electrode 2. For this reason, the reflected electron flow 3 becomes the plasma beam 2
2 is formed to extend to the electron return electrode 2 along a path separate from the plasma beam 22 and the plasma beam 22 is continuously and stably maintained. This duration is twice as long as the case where the insulating tube 1 and the electron return electrode 2 are not provided, and it has been confirmed that the duration is dramatically improved. Also, the insulating tube 1 is provided to prevent the occurrence of abnormal discharge and reduce the power loss due to the plasma beam 22 flowing into the electron return electrode 2. As a result, the plasma beam 22 irradiated from the plasma gun 11 is In the same case, the film formation rate (material evaporation amount) was improved by about 20%.
Further, by providing the electron return electrode 2 at a position close to the focusing coil 18, the size of the entire apparatus can be reduced. Next, a method of forming a SiOx film using the vacuum film forming apparatus 10 will be described. The method of forming the SiOx film is as follows.
(Silicon oxide) A film forming material comprising pellets is housed. A barrier film 64 is formed by forming a SiOx thin film 63 on the film 13a by substantially the same method as the above-described ITO film forming method. (FIG. 13B). Here, the SiOx thin film 63 will be described in detail.

The SiOx thin film 63 is made of Si as an evaporation source.
It is a thin film mainly composed of SiOx (1.5 ≦ x ≦ 2) formed using Ox (0 ≦ x ≦ 2) powder (3 to 5 mmφ). When the amount of oxygen in the SiOx thin film 63 falls below the above range, a decrease in transmittance due to oxygen deficiency occurs (FIG. 14B). The SiOx powder may be a sintered quartz powder, and the SiOx thin film 63 has transparency and high gully barrier properties against oxygen and water vapor.

The SiOx thin film 63 is composed of, in addition to silicon and oxygen, which are main components of the SiO ₂ thin film 63,
Aluminum, magnesium, calcium, potassium,
Metals such as sodium, titanium, zirconium and yttrium, and non-metal elements such as carbon, boron, nitrogen and fluorine may be contained.

The SiOx thin film 63 has transparency as described above, and is formed of a SiOx thin film having a refractive index at a wavelength of 633 nm in the range of 1.48 to 1.51. The above-mentioned refractive index is obtained by optical measurement, that is, ellipsometry or spectral characteristic measurement. Also, since the refractive index depends on the wavelength of the measurement light, the refractive index in the present invention,
It refers to the refractive index when the wavelength of the measurement light is 633 nm.

Here, the refractive index in the visible light region as described above is determined by the light scattering ability in the target medium. Since light scattering is caused by electrons, the light scattering ability of a certain atom is determined by the number and state of the electrons belonging to the atom, and has a substantially constant value depending on the type of the atom. Therefore, the refractive index of the medium is proportional to the light scattering ability per atom of the atoms contained in the medium and the amount of atoms that cause light scattering per unit volume. That is, if the number of atoms contained per unit volume is constant, the refractive index is determined by the composition ratio of the atoms (chemical composition of the medium). For example, in the case of silicon and oxygen, since silicon has higher light scattering ability, the refractive index increases when the amount of silicon is large and the amount of oxygen is small. Further, if the chemical composition of the medium is constant, the refractive index increases as the number of atoms contained per unit volume increases, that is, as the distance between the atoms becomes shorter and denser.

As shown in FIG. 14B, when SiO is used as a material, the visible transmittance increases as the oxygen flow rate increases and the oxygen concentration increases. On the other hand, as shown in FIG. 14B, when the oxygen flow rate decreases and the oxygen concentration decreases, the chemical composition changes, the ratio of silicon to oxygen increases, and the degree of oxidation of silicon decreases. Such a decrease in the degree of oxidation of silicon is not preferable because it causes an increase in the absorption coefficient of the SiOx thin film 63 with respect to visible light, and the SiOx thin film 63 is colored.

The thickness of the SiOx thin film 63 is, for example, about 50 to 3000 A, preferably 100 to 10 Å.
It can be arbitrarily selected and set within a range of about 00A.

During this time, the control unit 58 appropriately controls the regulating valve 57 in consideration of both the desired oxygen flow rate obtained from FIG. 14 (b) and the signal from the mass spectrometer 55. As a result, a SiOx thin film 63 having desired properties can be obtained.

Next, a modification of the vacuum film forming apparatus 10 will be described with reference to FIGS. 3 and 4, the same parts as those of the apparatus shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIGS. 3 and 4, a pair of plasma guns 11 are connected to the vacuum chamber 12, and each plasma beam 22 is shrunk to reduce the cross section of the plasma beam 22 generated from each plasma gun 11. On the other hand, sheet magnets 4 of the same polarity (N-pole or S-pole) are provided in front of the electron return electrode 2.

By providing the sheet magnets 4 and 4 as described above, the plasma beam 22 incident on the film forming material 20 is formed.
In a sheet form, and a wide evaporation source for the film forming material 20 can be formed. Therefore, a thin film can be appropriately formed on the wide substrate 13.

FIGS. 5 to 11 show a plasma gun 11 and a vacuum chamber 12 showing another modification of the vacuum film forming apparatus 10.
It is a figure of 12 A of short pipe parts of FIG. 5 to 11, the same parts as those in the first embodiment shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In the embodiment shown in FIGS. 5 and 6, a rotating wiper 5 for wiping and removing the film-forming material 20 attached to the surface of the electron return electrode 2 is provided. A good state can be maintained for a long period of time due to reflected electron feedback.

The embodiment shown in FIG.
The surface 6 on the side opposite to the plasma gun 11 is formed in an uneven shape to increase the surface area for reflected electron feedback.

The embodiment shown in FIG.
The baffle plate 7 is provided at an opening inside the vacuum chamber 12 of the second short tube portion 12A. The baffle plate 7 has a large number of penetrating portions 7a scattered uniformly over the entire surface, for example, in a lattice shape, and has a passage 7b for the plasma beam 22 provided at the center portion. This is to reduce the amount of the film-forming material 20 that has reached the gaseous state. The baffle plate 7 can be applied together with the wiper 5 described above or to a vacuum film forming apparatus 10 having an uneven surface 6.

With the configurations shown in FIGS. 5 to 8, the plasma beam can be further continuously and stably formed.

In the vacuum forming apparatus 10, the arrangement position and cross-sectional shape of the electron return electrode 2 or the insulating tube 1 are not limited to those described in the above embodiments.
The position of the electron return electrode 2 or the insulating tube 1 is not limited as long as it surrounds the plasma beam 22 and is within the short tube portion 12A. For example, as shown in FIG.
The electron return electrode 2 and the insulating tube 1 may be arranged so as to be offset toward the inside of the vacuum chamber 12 in the short tube portion 12A. 9, the cross-sectional shape of the electron return electrode 2 is rectangular, and the insulating tube 1 is connected to the plasma gun 1 in the example shown in FIG.
It is preferable to have a cylindrical shape having a flange on one side.

With such a configuration, reflected electrons can be captured even more efficiently.

FIG. 10 shows that a water cooling jacket 23 is formed in the electron return electrode 2, and a cooling water inflow pipe 24 is connected to an inlet of the water cooling jacket 23 and a cooling water outflow pipe 25 is connected to an outlet thereof. Thus, the electron return electrode 2 has a water-cooled structure.

FIG. 11 shows a water cooling jacket 26 formed in the baffle plate 7 shown in FIG. 8, a cooling water inflow pipe 27 connected to the inlet of the water cooling jacket 26, and cooling water supplied to the outlet thereof. Connect the outflow pipe 28,
The baffle plate 7 has a water-cooled structure.

In FIGS. 10 and 11, the temperature rise of each of the electron return electrode 2 and the baffle plate 7 can be suppressed, the discharge power that can be applied is increased, and the film forming speed can be improved. .

In each of the above-described embodiments, as long as the insulating tube 1 is kept electrically floating with respect to the plasma gun 11, it does not matter whether the material is a conductive substance or not. Next, another modified example of the vacuum forming apparatus will be described with reference to FIG. The embodiment shown in FIG. 12 is the same as the embodiment shown in FIGS. 1 and 2 except that the configuration of the electron return electrode 2 is different.

As shown in FIG. 12, the electron return electrode 2 has a coil (or a permanent magnet) 2a inside, and converts the plasma beam 22 generated from the plasma gun 11 into the electron return electrode 2.
Is allowed to pass through without contact. The electron return electrode 2 has a heater 2b inside, and heats and removes the film-forming material 20 attached to the surface of the electron return electrode 2. It should be noted that the electron return electrode 2 has a reflected electron flow 3
When the heater is heated by the feedback of the above and a constant temperature is maintained, it is not necessary to provide the heater 2b. Furthermore, as shown in FIG. 12, the coil (or permanent magnet) 2 of the electron return electrode 2
Outside of a, a water cooling jacket 2c and a vacuum heat insulating layer 2d are provided to protect the coil (or permanent magnet) 2a.

Next, with reference to FIG. 12, the operation of heating and removing the film-forming material 20 adhering to the surface of the electron return electrode 2 will be described. When the electron return electrode 2 is heated, the film-forming material 20 attached to the surface evaporates and is removed. However, the electron return electrode 2 is generally made of copper-free copper.
When 0 is MgO, the melting point is 1300 ° C. or higher, so that copper-free copper cannot be used. In this case, high melting point metal Mo or W is used as the electron return electrode 2.

The film forming material 2 having the electron return electrode 2 attached thereto
When heating is performed until 0 evaporates, the performance of the coil (or the permanent magnet) 2a in the electron return electrode 2 is reduced, but as described above, the water cooling jacket 2c and the vacuum insulation are provided outside the coil (or the permanent magnet) 2a. By providing the layer 2d,
It is possible to prevent the performance of the coil (or the permanent magnet) 2a from deteriorating.

[0059]

As described above, according to the present invention, the state of a thin film formed on a film-forming object is predicted in advance by detecting the atmosphere in a vacuum chamber with a mass spectrometer in advance. I can put it.

[Brief description of the drawings]

FIG. 1 shows a method for forming an ITO film and SiOx according to the present invention.
The figure which shows the vacuum film-forming apparatus which performs a film formation method.

FIG. 2 is a diagram showing an entire system in which a vacuum film forming apparatus is incorporated.

FIG. 3 is a diagram showing a modification of the vacuum film forming apparatus.

4 is a diagram showing states of plasma beams before and after a sheet-like magnet in the vacuum film forming apparatus shown in FIG.

FIG. 5 is a view of a plasma gun showing another modified example of the vacuum film forming apparatus and a short tube portion of a vacuum chamber.

6 is a view of the electron return electrode shown in FIG. 5 as viewed from the front.

FIG. 7 is a diagram of a plasma gun showing another modified example of the vacuum film forming apparatus and a short tube portion of a vacuum chamber.

FIG. 8 is a view of a plasma gun showing another modified example of the vacuum film forming apparatus and a short tube portion of a vacuum chamber.

FIG. 9 is a view of a plasma gun showing another modified example of the vacuum film forming apparatus and a short tube portion of a vacuum chamber.

FIG. 10 is a view showing an electron return electrode of the vacuum film forming apparatus.

FIG. 11 is a view showing a baffle plate of the vacuum film forming apparatus.

FIG. 12 is a view showing another modification of the vacuum film forming apparatus.

FIG. 13 is a view showing a PDP panel.

FIG. 14 is a view showing characteristics of an ITO film and a SiOx film with respect to an oxygen flow rate.

FIG. 15 is a view showing another modification of the vacuum film forming apparatus.

[Explanation of symbols]

 Reference Signs List 1 insulating tube 2 electron return electrode 2a coil or permanent magnet 2b heater 3 reflected electron flow 4 sheet magnet 11 plasma gun 12 vacuum chamber 12A short tube portion 13 substrate 13a synthetic resin film 14 discharge power supply 15 cathode 16 first intermediate electrode 17th 2 Intermediate electrode 18 Converging coil 19 Crucible 20 Film forming material 21 Crucible magnet 22 Plasma beam 40 Deposition plate 41 Film forming speed meter 42 Vacuum gauge 43 Oxygen supply pipe 44 Measurement value collecting unit 45 Plasma gun ammeter 46 Plasma gun voltmeter 47 Electron feedback electrode ammeter 48 Ground ammeter 55 Mass spectrometer 56 Control unit 57 Regulator valve 61 ITO thin film 62 Color filter for liquid crystal display 63 SiOx thin film 64 Barrier film 65 Color filter 66 Coating drum

Continued on the front page F-term (reference) 4K029 AA09 AA11 AA24 AA25 BA46 BA50 BC07 BC09 CA04 DD00 DD05 EA04 EA05 4M104 AA10 BB36 CC01 DD35 5F045 AA08 AB32 AB40 AC11 AF07 CA15 DP22 EB08 EE12 EH04 EH16 EB07 BB05 BC07 EB05 BC03 BF07 BF18 BF29 BG01 BG02 BG10 5F103 AA10 BB02 BB14 BB44 BB49 BB51 BB60 DD27 DD30 HH04 LL13 NN10

Claims (3)

[Claims] A crucible accommodating a film-forming material inside, a vacuum chamber in which a film-forming object is arranged and grounded, and a plasma gun for generating a plasma beam and sending the plasma beam into the vacuum chamber. A convergence coil for irradiating a plasma beam generated by a plasma gun with a magnetic field on a film-forming material in a crucible whose trajectory and / or shape is controlled, and depositing the film-forming material on a film-forming object; A vacuum film forming apparatus provided with a mass spectrometer for analyzing an atmosphere in the inside. 2. The apparatus according to claim 1, wherein an oxygen supply unit having a control valve is connected to the vacuum chamber, and a control unit for controlling the control valve based on a signal from the mass spectrometer is connected to the mass spectrometer. The vacuum film forming apparatus according to the above. 3. A plasma gun side in a vacuum chamber,
2. The vacuum film forming apparatus according to claim 1, further comprising an electron return electrode for returning a reflected electron flow generated from the plasma beam applied to the film forming material.