JP2000077596A - Lead frame, method of manufacturing the same, resin-encapsulated semiconductor device, and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small, large numbered pin exposed electrode bottom face type rein sealed semiconductor device and a lead frame by providing a means for arranging signal connection lead parts (inner lead parts) in a matrix form. SOLUTION: This lead frame has a first signal connection lead part 13 supported by a frame 15, where the bottom faces of the lead part 13 and the frame 15 adhere to a resin film 16. Bottom faces of a die pad part 18 and a second signal connection lead part 19 are bonded onto the resin film 16 exposed in an opening 17, where the extended forward end parts of the first signal connection lead part 13 are arranged. When the lead frame is applied to a resin sealed semiconductor device, outer electrodes can be arranged into a matrix form, and a highly reliable resin sealed semiconductor device can be obtained at low cost.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for a resin-encapsulated semiconductor device in which external electrodes are arranged on the bottom surface of a package. It relates to a manufacturing method.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, it has been required to mount semiconductor components mounted on electronic equipment at a high density. Is progressing.

Hereinafter, a conventional resin-encapsulated semiconductor device and a method of manufacturing the same will be sequentially described. At present, in order to mount semiconductor devices on the surface of a printed circuit board at high density, QFP packaging technology, in which a number of gull-wing-shaped lead terminals are arranged on the sides of a square or rectangular encapsulating resin encapsulating semiconductor elements, is widely used. It is used.

[0004] However, with the advancement of functions (higher LSI) of semiconductor elements, it is strongly desired that the QFP packaging technology further increase the number of external lead terminals.

Therefore, in order to increase the number of external lead terminals without increasing the external dimensions of the QFP package, a narrow pitch QFP package having a terminal pitch of 0.3 mm has been put into practical use at present. In the handling, bending of the terminal lead becomes a major problem. That is, in manufacturing and mounting a narrow-pitch QFP package, due to lead bending, (1) reduction in the manufacturing yield of the semiconductor device, (2) reduction in the yield when mounting the semiconductor on a printed circuit board, and (3) mounting of the semiconductor device. Sufficient measures are required to reduce the quality of printed circuit boards.

A BGA (Ball Grid Array) package has been developed as another package technology for solving the above-mentioned problem of the QFP package. FIG.
FIG. 4 shows an example of a cross-sectional view of a GA package.

In FIG. 18, a semiconductor element 1 has an adhesive 2
Is bonded and mounted on the double-sided printed wiring board 3 via the. Wiring patterns 4 and 5 are formed on the upper and lower surfaces of the double-sided printed wiring board 3, and the upper and lower wiring patterns 4 and 5 are electrically connected by a conductor 7 formed on the surface of the through hole 6. The electrode pads 8 formed on the upper surface of the semiconductor element 1 and the wiring patterns 4 are electrically connected by thin metal wires 9. The surface of the wiring pattern 4 other than where the electrical connection is made by the thin metal wires 9 is covered with a solder resist 10. The semiconductor element 1, the thin metal wire 9, and the double-sided printed wiring board 3 are molded and protected by a resin 11.

The surface of the wiring pattern 5 on the lower surface of the double-sided printed wiring board 3 is also covered with a solder resist 10 except for a part. A solder ball 12 is formed on the surface of the wiring pattern 5 not covered with the solder resist 10. The solder balls 12 are two-dimensionally arranged in a grid on the lower surface of the double-sided printed wiring board 3. And BGA
When a semiconductor device mounted by a package method is mounted on a mounting substrate such as a printed circuit board, electrical connection is made via solder balls 12.

[0009]

However, each of the above-mentioned conventional semiconductor devices has various problems as described below.

The BGA package system shown in FIG.
By arranging external electrode terminals (solder ball electrodes) two-dimensionally on the lower surface of the semiconductor device, there is an advantage that the number of terminals can be increased as compared with the QFP package with the same package size, but on the other hand, compared with the QFP package. There are also inferior points. That is, the BGA package shown in FIG. 18 requires (1) a double-sided printed circuit board for bonding and supporting a semiconductor element, and (2) introduction of new manufacturing equipment other than the conventional QFP package manufacturing equipment. Further, in the BGA package system, a glass epoxy resin substrate is usually used as a double-sided printed wiring board. For this reason, measures against distortion applied to the semiconductor element in the resin bonding and heating and curing steps of the semiconductor element, and the double-sided printed wiring board in the step of electrically connecting each pad of the semiconductor element and the surface wiring of the double-sided printed wiring board by wire bonding Measures against warpage, warpage of double-sided printed circuit board by resin-sealing only the side (one side) to which the semiconductor element is bonded,
Even if the double-sided printed wiring board is slightly warped, there are many problems to be solved in manufacturing technology such as securing uniformity of the height of the horizontal plane of a plurality of solder balls. In addition, guaranteeing the reliability of the package, especially the moisture resistance, is also an important consideration. For example, if the adhesive force at the interface between the glass / epoxy resin substrate and the resin used for the mold is weak, quality assurance becomes difficult in environmental tests such as a high-temperature and high-humidity test and a pressure cooker test.

As a solution to these problems, the use of a ceramic double-sided printed wiring board is a very effective method, but has the disadvantage that the cost of the board itself is high.
Further, in the BGA package method, introduction of a new manufacturing facility is indispensable in the process of forming the solder ball, and the cost increases as a capital investment.

Also, BGA and CSP (chip size,
In the field of packaging, a package using a resin film as a base substrate is being studied. However, resin films such as polyimide are more apt to absorb moisture than ceramics and the like, preventing water from entering the base substrate. It is difficult to prevent. Therefore, in a step of performing IR reflow of a solder ball as an external connection terminal or when mounting a resin-encapsulated semiconductor device on a printed wiring board by solder, the water is trapped in the vicinity of the base board or the chip adhesive interface. There has been a problem that blistering and peeling, cracks in the molded resin are liable to occur, and a connection portion between the semiconductor element and the wiring pattern is peeled off to cause an electrical connection failure. The same poor connection phenomenon is also caused by the fact that the solvent contained in the adhesive is not removed in the semiconductor element bonding step.

The present invention relates to a conventional QFP packaging technology using a lead frame, a BGA or CSP technology for a resin film such as polyimide or ceramics, and a manufacturing process of a resin-encapsulated semiconductor device using the same. In view of various problems at the time of mounting, the present invention is intended to solve those problems, and is suitable for producing a thin and small resin-sealed semiconductor device, a method of manufacturing the same, and manufacturing the resin-sealed semiconductor device. And a method of manufacturing the same.

Further, the present invention reduces an electrical connection failure due to swelling or peeling in a solder reflow process, mechanical, thermal, or insufficient strength after mounting, and provides an inexpensive lead frame type having high mounting reliability. The present invention provides a resin-encapsulated semiconductor device having an electrode bottom exposed type, a method of manufacturing the same, a lead frame and a method of manufacturing the same.

A first object of the present invention is to provide a resin-encapsulated semiconductor with a small electrode and a large number of pins by exposing the signal connection leads (inner leads) in a matrix. It is an object to provide a device and a lead frame.

A second object of the present invention is to provide means for arranging signal connection leads (inner leads) in a matrix form and die pad fixing means, thereby achieving a small size, a large number of pins, and heat radiation. It is an object of the present invention to provide a resin-encapsulated semiconductor device and a lead frame of an electrode bottom surface exposed type having a good condition.

Further, a third object of the present invention is to provide a means for overhanging a semiconductor element on a signal connection lead (inner lead) so that a large semiconductor element can be mounted, and a small matrix-shaped element can be provided. It is an object of the present invention to provide a resin-encapsulated semiconductor device of an electrode bottom exposed type having a signal connection lead portion disposed in the semiconductor device.

A fourth object of the present invention is to provide a means for increasing the holding force of the sealing resin when the lower surface of the post portion or the die pad portion is exposed from the sealing resin. It is an object of the present invention to provide a resin-sealed semiconductor device of an electrode bottom exposed type having a signal connection lead portion arranged in a matrix and capable of suppressing peeling from a sealing resin, and a lead frame suitable for manufacturing the same.

Further, a fifth object of the present invention is to provide a resin-sealed semiconductor device of an electrode bottom exposed type having high connection reliability by providing reinforcement means for signal connection leads arranged in a matrix, and its manufacture. An object is to provide a suitable lead frame.

A sixth object of the present invention is to provide a matrix having good heat radiation characteristics by taking measures to prevent the occurrence of resin burrs when the lower surfaces of the external terminals and the die pad are exposed from the sealing resin. It is an object of the present invention to provide a resin-sealed semiconductor device having an electrode bottom exposed type having signal connection leads arranged in a shape, a method of manufacturing the same, and a lead frame suitable for the manufacture thereof.

A seventh object of the present invention is to eliminate a suspension lead in a lead frame and to provide a signal connection arranged in a small matrix capable of responding to a change in the size of a semiconductor element and improving reliability. It is an object to provide a resin-sealed semiconductor device and a lead frame of an electrode bottom exposed type having a lead portion for use.

[0022]

In order to solve the above-mentioned conventional problems, a lead frame of the present invention, a method of manufacturing the same, and a resin-sealed semiconductor device and a method of manufacturing the same have the following structures. .

That is, the lead frame according to the present invention comprises a frame, an opening provided in a region of the frame, and a second portion connected to the frame near an opening edge of the opening. 1 signal connection lead portion and the first
A second signal connection lead portion separately and independently disposed in a region inside the signal connection lead portion; a semiconductor element support member provided in a substantially central region of the opening; A part of the frame, the first signal connection lead, the second signal connection lead, and a resin film adhered to the back surface of the semiconductor element support member, covering the opening area. Is a lead frame.

Also, a frame frame, an opening provided in a region of the frame frame, and a first signal connection lead disposed near and independently from the frame near an opening edge of the opening. Part, a second signal connection lead part separately and independently disposed in a region inside the first signal connection lead part, and a semiconductor element provided in a substantially central region of the opening. A support member, at least a region of the opening, and a part of the frame, the first signal connection lead, the second signal connection lead, and a back surface of the semiconductor element support member This is a lead frame made of a resin film adhered to the lead frame.

Specifically, the semiconductor element supporting member is a lead frame which is a rectangular die pad portion, and the semiconductor element supporting member is a lead frame including a plurality of post members. In addition, a groove is provided in an upper part of either the first signal connection lead and the second signal connection lead, or the first signal connection lead and the second signal connection lead. The first signal connection lead and the second signal connection lead, or the first signal connection lead and the second signal connection lead. This is a lead frame provided with a portion. Furthermore, the thickness of the semiconductor element supporting member is a lead frame configured to be thicker than the thickness of the first signal connection lead portion and the second signal connection lead portion,
The semiconductor element supporting member is a lead frame having a convex portion at a lower portion thereof.

Next, in the method for manufacturing a lead frame according to the present invention, the first opening connected to the frame near the opening edge of the opening in the region of the opening with respect to the metal plate. Forming a signal connection lead portion and a second signal connection lead portion connected to the first signal connection lead portion by a connection portion in a region inside the first signal connection lead portion; Forming a frame structure;
A step of covering at least a region of the opening with respect to the lead frame structure, and adhering a resin film to the back surfaces of the first signal connection lead portion and the second signal connection lead portion; Cutting and removing a portion, and separately and independently arranging the second signal connection lead portion on the resin film in the area of the opening; and a semiconductor element supporting member on the resin film in the opening. And a step of fixing the lead frame.

An opening, a first signal connection lead near the opening edge of the opening, and a first signal connection lead in a region of the opening with respect to the metal plate. A second signal connection lead portion connected to the first signal connection lead portion by a connection portion in a region inner than the second signal connection lead portion, and a support portion for supporting the connection portion are formed to form a lead frame structure. Process, for the lead frame structure,
A step of covering at least a region of the opening, bringing a resin film into close contact with the back surface of the first signal connection lead and the second signal connection lead, and cutting and removing the connecting portion and the support; Disposing a first signal connection lead portion and a second signal connection lead portion separately and independently on the resin film in the region of the opening; and forming the first signal connection lead and the second signal connection lead on the resin film in the opening. A method for manufacturing a lead frame, comprising the step of fixing a semiconductor element support member.

Specifically, in the step of bringing the resin film into close contact with the lead frame structure, the resin film is attached to the back surface of the connecting portion connecting the first signal connecting lead portion and the second signal connecting lead portion. This is a method for manufacturing a lead frame that does not cause close contact.

Next, a resin-encapsulated semiconductor device according to the present invention comprises a semiconductor element having an electrode pad, a support member for supporting the semiconductor element, and an electrical connection with the electrode pad of the semiconductor element. A first signal connection lead portion arranged around the member and a second signal connection lead electrically connected to an electrode pad of the semiconductor element and arranged in an inner region of the first signal connection lead portion; A lead portion, a connection member for electrically connecting the semiconductor element and the first signal connection lead portion and the semiconductor element and a second signal connection lead portion, and at least the support member and the semiconductor element; The first signal connection lead portion and the second signal connection lead portion are made of a sealing resin for sealing the upper surfaces of the first signal connection lead portion and the second signal connection lead portion. Are independent of each other The first signal connection lead and the bottom side of the second signal connection leads are configured external terminals are resin-sealed semiconductor device exposed from the sealing resin.

Specifically, the supporting member supporting the semiconductor element is a resin-sealed semiconductor device smaller in size than the semiconductor element. The thickness of the support member supporting the semiconductor element is larger than the thickness of the first signal connection lead portion and the second signal connection lead portion, and the semiconductor element supported on the support member has the thickness. A resin-encapsulated semiconductor device having a configuration in which the first signal connection lead portion and the second signal connection lead portion are not brought into contact with each other. Further, the supporting member supporting the semiconductor element has a step, and the first signal connection lead and the second signal connection lead have a groove on the upper surface thereof. Device.

Next, according to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, a frame, an opening provided in a region of the frame, and a connection with the frame near an opening edge of the opening are provided. A first signal connection lead portion disposed as a first signal connection lead portion, and a second signal connection lead portion separately and independently disposed in a region inside the first signal connection lead portion;
A semiconductor element supporting member provided in a substantially central region of the opening, at least a region of the opening, a part of the frame, the first signal connection lead, and the second A step of preparing a lead frame composed of a signal connection lead portion and a resin film adhered to the back surface of the semiconductor element supporting member; a step of mounting a semiconductor element on the semiconductor element supporting member; Electrically connecting an electrode pad to the first signal connection lead portion and the second signal connection lead portion; and A step of sealing the upper surface area of the support member, the upper surface areas of the first signal connection lead portion and the second signal connection lead portion with a sealing resin, and removing the resin film. A method of manufacturing sealed semiconductor devices.

The typical operation of the present invention is as follows. That is, by fixing the support member bottom surface on the resin film exposed at the opening of the lead frame in which the signal connection lead portions are arranged in a matrix, multi-terminals are realized, and productivity, quality, and mounting reliability are improved. A characteristic lead frame suitable for a resin-sealed semiconductor device can be realized.

After the resin film is brought into close contact with at least the periphery of the external terminal on the bottom surface side of the first and second signal connection lead portions provided with the wide portion and the groove of the lead frame, By bonding the bottom surface of the die pad portion thicker than the thickness of the external terminal portion to the resin film at the center of the opening, the semiconductor element can be bonded to the die pad portion and disposed above the second signal connection lead portion. It is possible to realize a characteristic lead frame suitable for a small-size resin-encapsulated semiconductor device with high productivity, quality and mounting reliability by mounting a semiconductor element larger than the tip of the second signal connection lead. it can.

In the method of manufacturing a lead frame, an adhesive resin film is fixed to the bottom surfaces of the first and second external terminals connected to the first and second signal connection leads. After that, the first and second signal connection leads are formed by removing the connection portion, and the support member is fixed to the resin film exposed at the opening, so that the external terminal portions are arranged in a matrix. A lead frame can be realized.

Further, a supporting member having a characteristic corresponding to the characteristics of the resin-encapsulated semiconductor device is separately prepared, the lead frame can be shared, and an efficient manufacturing method can be realized. Also,
In the resin-encapsulated semiconductor device, by arranging the first and second signal connection leads using a lead frame in a matrix, it is possible to increase the number of terminals and realize a small-sized resin-encapsulated semiconductor device. .

Also, the presence of the supporting member thicker than the thickness of the external terminal portion allows the semiconductor element to be adhered on the supporting member above the second signal connection lead portion, and the second
A small-sized resin-encapsulated semiconductor device having high productivity and high mounting reliability, on which a semiconductor element larger than the tip of the signal connection lead is mounted.

The lower outer peripheral portion of the support member is stepped and fixed to the center of the first and second signal connection leads by a sealing resin. The semiconductor element can be bonded to the support member above the second signal connection lead, and a semiconductor element larger than the tip of the second signal connection lead can be mounted. In particular, it is possible to realize a resin-encapsulated semiconductor device having particularly excellent moisture resistance and mounting reliability.

The presence of the wide portion and the plurality of grooves on the surface of the signal connection lead portion allows the sealing resin to enter the groove portion, and the anchoring effect and the effect of the wide portion provide the external terminal portion. Even if it protrudes from the bottom surface of the sealing resin, the adhesion to the resin is improved, so that a resin-encapsulated semiconductor device with improved various reliability including mounting reliability can be realized.

Further, by arranging the exposed surfaces of the external terminals and the lower surface of the support member in a matrix shape so as to protrude from the sealing resin surface, it is easy to open a space between the mounting substrate and the bottom surface of the semiconductor device, which is suitable for reliability after mounting. A resin-sealed semiconductor device can be realized. Also, by suitably arranging the signal connection lead portion processed thinner than the external terminal portion, the connection length of the thin metal wire can be shortened, the connection of the thin metal wire is easy, and the resin-encapsulated type having good productivity. A semiconductor device can be realized.

In a method of manufacturing a resin-encapsulated semiconductor device, a step of bonding a semiconductor element to a prepared lead frame, and a step of electrically connecting the semiconductor element and a signal connection lead portion arranged in a matrix by a thin metal wire. The external terminal portion bottom surface, the post portion or the die pad bottom surface to the external terminal portion bottom surface of the lead frame and the lead frame to which the semiconductor element is adhered and the resin film portion is adhered to the lead frame. A step of pressing the surface to seal the resin with the sealing resin, and removing the resin film portion by UV irradiation or chemical treatment to reduce the adhesive force, and external terminal portions and posts protruding from the sealing resin surface on the bottom surface. Forming the external terminal portion or die pad portion, and cutting the extended portion at the distal end of the external terminal portion from the lead frame to form Preparative substantially the same plane, can provide a method for producing a more becomes a resin-sealed semiconductor device and forming an external terminal portion.

[0041]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a lead frame, a method of manufacturing the same, a resin-sealed semiconductor device and a method of manufacturing the same according to the present invention will be described with reference to the drawings.

First, an embodiment of the lead frame of the present invention will be described. FIG. 1 is a plan view showing a lead frame of the present embodiment.

As shown in FIG. 1, in the lead frame of this embodiment, one end of a first signal connection lead portion 13 (first external terminal portion 14) is supported by a frame 15. Then, at least the first signal connection lead portion 13 (the first external terminal portion 14), the frame 15
The bottom surface of the resin film 16 is in close contact with the resin film 16, and the resin film 16 has a substantially rectangular shape on the exposed resin film 16 of the opening 17 in which each tip of the first signal connection lead 13 extends. Die pad part 18, second signal connection lead part 19
By fixing the (second external terminal portion 20), the suspension lead portion which is a lead for supporting the die pad portion itself as in the related art is removed, and the second external terminal portion 20 is independently fixed in the frame 15 in the second frame portion.
The signal connection lead portion 19 (second external terminal portion 20) is present together with the die pad portion 18. That is, when a resin-encapsulated semiconductor device is configured using the lead frame of the present embodiment, the bottom surface and side surfaces of the first signal connection lead portion 13 constitute the first external terminal portion 14, and The bottom surface of the second signal connection lead portion 19 constitutes the second external terminal portion 20.
In the present embodiment, the second signal connection lead portion 19 (second external terminal portion 20) is staggered with respect to the area inside the first signal connection lead portion 13. Instead, a matrix arrangement may be adopted as the same arrangement.

In the lead frame of the present embodiment, the first signal connection lead 13, the first external terminal 14, the second signal connection lead 19, the frame 1
5 (the second external terminal portion 20 and the die pad portion 18) are integrally formed of a conductive material such as a metal plate as a conductive material. In FIG. 1, a portion indicated by a broken line is a region where the resin film 16 is in close contact. In addition, a sealing line when the semiconductor element is mounted and then sealed with a sealing resin is indicated by an alternate long and short dash line, and a portion inside the alternate long and short dash line is a portion constituting the first external terminal portion 14.

The signal connection lead portions 13 and 19 in the lead frame of the present embodiment have a wide portion at the top in the cross-sectional structure and a groove at the surface thereof. When a resin-encapsulated semiconductor device is manufactured using a lead frame of the type described above, it has the function of increasing the adhesion to the encapsulation resin and reducing the application of mechanical and thermal stress after mounting to the thin metal wires. .

Further, by reducing the area of the second signal connection lead portion 19 (second external terminal portion 20) compared to the first external terminal portion 14, the number of external terminal portions arranged in a matrix is reduced. And the number of terminals can be increased.

The shape and thickness of the die pad portion 18 in the lead frame according to the present embodiment are determined according to the characteristics of the semiconductor device.
It is determined according to the size, thickness, mounting conditions, required reliability and the like of the semiconductor element to be mounted, processed, and then fixed on the resin film 16. Further, since the lead frame of the present embodiment can be retrofitted with the die pad portion, it can be widely used regardless of the size change of the die pad portion 18 such as the area and thickness.

In the lead frame of the present embodiment, the thickness of the die pad portion 18 is equal to or greater than the thickness of the first signal connection lead portion 13 and the second signal connection lead portion 19, or in the vicinity of the bottom surface. It is constituted by a stepped shape having a flange portion. Furthermore, the lead frame of the present embodiment is a lead frame that does not have a tie bar for stopping the outflow of the sealing resin during resin sealing. Further, the lead frame of the present embodiment is not a single lead frame pattern having the structure shown in FIG.

In this embodiment, the resin film 16
Eliminates the need for a suspension lead as in the prior art and, together with the fixation of the die pad portion 18, particularly, the first and second portions on the lower surface side of the die pad portion 18 and the rear surfaces of the first and second signal connection lead portions 13 and 19. The resin film 1 serves as a mask for preventing the sealing resin from flowing around the portion constituting the external terminal section 2 during resin sealing.
Due to the presence of 6, resin burrs can be prevented from being formed on the lower surface of the die pad portion 18 and on a portion corresponding to the external terminal portion. The resin film 16 is a resin film based on a resin containing polyethylene terephthalate, polyimide, polycarbonate or the like as a main component, can be peeled off after resin sealing, and is resistant to a high-temperature environment during resin sealing. Something is needed. Note that the resin burr is a residual resin generated in the resin sealing with respect to the lead frame, and is an unnecessary part in resin molding.

In the sealing mold used for sealing the resin, one of the molds does not come into contact with the sealing resin due to the function of the resin film 16. In addition, since there is no need for an extrusion pin for releasing the mold after resin sealing or quenching for preventing deformation of the mold from the sealing resin, the mold structure can be simplified.

Next, another embodiment of the lead frame of the present invention will be described. FIG. 2 is a plan view showing the lead frame of the present embodiment.

As shown in FIG. 2, in the lead frame of the present embodiment, the overall configuration is the same as that of the lead frame of the first embodiment, but the first signal connection lead portion 13 is the first , And the second signal connection lead 19 forms a second external terminal 20. And at least the first external terminal 1
4. An opening in which the second external terminal portion 20 and a part of the bottom surface of the frame 15 are in close contact with the resin film 16 and the distal ends of the second signal connection lead portions 19 are arranged to extend. Die pad portion 1 on resin film 16 exposed in portion 17
8 or the post portion 21 is fixed, so that the post portion 21 or the die pad portion 18 and the first signal connection lead portion 13 (the first external portion) are independently provided in the frame 15 without the suspension lead portion as in the related art. Terminal part 14), second
The signal connection lead portion 19 (second external terminal portion 20) is present.

That is, the lead frame of this embodiment is
The first signal connection lead portion 13 and the second signal connection lead portion 19 are formed in the resin film 1 in the opening region of the frame 15.
6 are arranged separately and independently. In the lead frame of the present embodiment, the die pad portion 18 or the post portion 21
, But the post part 21 is provided with the die pad part 1.
8 is divided into a plurality of parts, and is a mounting member for a semiconductor element having an area smaller than that of the semiconductor element. When a resin-encapsulated semiconductor device is configured, the exposed area of the back surface of the mounted semiconductor element is a die pad. This is effective in reducing thermal stress and improving heat dissipation. The number of the post portions 21 arranged on the resin film 16 is preferably four in order to support the four corners or four sides of the semiconductor element, but the number may be a preferable number in terms of reliability. it can.

In the lead frame of the present embodiment, the area of the second external terminal section 20 is made smaller than that of the first external terminal section 14 so that the total number of external terminal sections arranged in a matrix is increased to increase the number of external terminal sections. Terminalization has been achieved.

In the lead frame of the present embodiment, the first signal connection lead portion 13, the second signal connection lead portion 19, and the frame 15 are integrally formed of a metal plate as a conductive material. Is what is being done.

In FIG. 2, a portion shown by a broken line is a region where the resin film 16 is in close contact. After the semiconductor element is mounted, the sealing line when sealing with the sealing resin is located at the position of the frame opening edge 22 which is the exposed edge of the resin film 16 in the opening area of the frame 15.

The shape and thickness of the post portion 21 or the die pad portion 18 in the lead frame of this embodiment are determined by the characteristics of the resin-encapsulated semiconductor device, the size and thickness of the semiconductor element to be mounted, the mounting conditions, and the required reliability. Determined by gender, etc.
After processing, it is fixed on the resin film 16. The lead frame is connected to the die pad portion 18 or the post portion 21.
It can be widely used regardless of the change. In addition, the first and the first in the lead frame of the present embodiment.
The second signal connection leads 13 and 19 are provided with a wide portion on the upper part and a groove on the surface thereof. When a semiconductor element is mounted and a resin-encapsulated semiconductor device is formed, sealing is performed. In addition to increasing the adhesion to the resin,
It works to reduce the thermal stress applied to the fine metal wires.

Further, in the lead frame of this embodiment,
The thickness of the post portion 21 or the die pad portion 18 is equal to or greater than the thickness of the first and second signal connection lead portions 13 and 19, or a flange portion is formed around the bottom surface of the post portion 21 or the die pad portion 18. It is constituted by an existing stepped shape. Furthermore, the lead frame of the present embodiment is a lead frame that does not have a tie bar for stopping the outflow of the sealing resin during resin sealing.

The lead frame of this embodiment is shown in FIG.
The lead frame pattern having the structure shown in FIG. 3 is not one but a plurality of lead frame patterns arranged continuously in the left, right, up and down directions.

In this embodiment, the resin film 16
Eliminates the need for a suspension lead, and secures the post portion 21 or the die pad portion 18 together with the first and second signal connection lead portions 13 and 19, especially the lower surface side of the post portion 21 or the die pad portion 18. The first and second external terminal portions 14 and 20 serve as a mask for preventing the sealing resin from flowing around at the time of resin sealing. The lower surface of the post part 21 or the die pad part 18,
It is possible to prevent resin burrs from being formed in a portion corresponding to the external terminal portion. The resin film 16
Is a film based on a resin whose main component is polyethylene terephthalate, polyimide, polycarbonate, etc., which can be peeled off after resin sealing, and which has resistance to high temperature environment at the time of resin sealing. .

Next, a method for manufacturing a lead frame according to this embodiment will be described with reference to the drawings. FIG. 3, FIG. 4,
5 and 6 are plan views showing the method for manufacturing the lead frame of the present embodiment.

First, as shown in FIG. 3, as a first step,
A frame 15 is formed in a metal plate made of a copper material or the like constituting a lead frame by etching or pressing to form a frame 15 in the metal plate.
5, an opening region 23 is formed in the region 5, and the opening region 23 is formed.
The first signal connection lead portion 13 which is connected to the frame 15 so as to protrude from the frame frame 15 and becomes the first external terminal portion 14
A second signal connection lead 19 connected to the first signal connection lead 13 at the connection portion 24, and a second signal electrode constituting an external electrode on the back surface of the second signal connection lead 19. The external terminal portion 20 is formed to form a metal lead frame structure 25.

Next, as shown in FIG. 4, as a second step,
The resin film 16 is brought into close contact with the lead frame structure 25. In this case, as shown by the broken line in the figure, the resin film 16 is brought into close contact with an area that reliably covers the opening region 23. Further, the adhesion of the resin film 16 is determined by the first signal connection lead portion 13 (first external terminal portion 14) and the second signal connection lead portion 19 (formed in the region of the lead frame structure 25). The second external terminal section 20) is carried out so as to be in close contact with the frame 15 and, for example, is adhered using a resin film with an adhesive. However,
It does not adhere to the bottom of the connecting portion 24. In this state, the adhesive surface of the resin film 16 is exposed in the opening region 23.

Next, as a third step, the second signal connection lead 19 (the second signal connection lead 19) connected to the first signal connection lead 13 (the first external terminal 14) by the connection 24.
The connection portion 24 of the external terminal portion 20 is peeled off or separated by laser cutting, etching, or the like, and the second signal connection lead portion 19 (the second external terminal) is independently and separately fixed to the resin film 16. Unit 20).

Next, as shown in FIG. 5, as a fourth step, a metal plate 26 made of copper or the like and different from the metal plate used in FIG. Then, the post part 21 or the die pad part 18 is formed. In this case, in order to hold the post portion 21 or the die pad portion 18 on the metal plate 26, a connection portion 27 is formed, and the post portion 21 or the die pad portion 18 is connected to the metal plate 26. The post portions 21 are connected and held by the connecting portions 27 so that the individual post portions 21 do not come off. Since the connection portion 27 is configured to be easily cut by etching or the like, it is easy to separate the post portion 21 or the die pad portion 18 from the metal plate 26 and take out the post portion 21 or the die pad portion 18.

As a fifth step, as shown in FIG. 6, a die pad portion 18 made of another metal plate as shown in FIG. 5 is formed on the resin film 16 exposed in the opening 23. It is possible to obtain a lead frame that is fixed and does not have a suspension lead portion that supports the die pad portion 18. Here, the first signal connection lead portion 13 (first
A second signal connection lead 19 (second external terminal 20) is formed separately from the external terminal 14).

In FIG. 6, a region shown by a dashed line is a sealing line when a semiconductor element is mounted and sealed with a resin. The portion indicated by the broken line is the resin film 1
6 are tightly adhered to a region that securely covers the opening region 23. Further, in the figure, the back surface of the first signal connection lead portion 13 inside the dashed-dotted line is a portion constituting the first external terminal portion 14.

The thickness of the lead frame of this embodiment is 200 [μm], the thickness of the post portion or the die pad portion 18 is 300 [μm], and 100 [μm].
m]. By forming the post portion or the die pad portion thicker than other configurations, when a semiconductor element larger in size than the post portion or the die pad portion is mounted, the first signal connection lead portion 13 and the second signal connection lead portion are provided. The semiconductor element does not come into contact with the lead portion 19, so that a large semiconductor element can be mounted, and a small-sized resin-sealed semiconductor device in which the post portion or the die pad portion is exposed can be realized.

According to the lead frame of this embodiment, the number of signal connection lead portions can be appropriately arranged according to the number of electrodes of the semiconductor element and the like, and can be arranged in a lattice or staggered shape as necessary. Moreover, when the resin-encapsulated semiconductor device is configured using the lead frame of the present embodiment, the first signal connection lead portion 13 can be observed from the side surface of the resin-encapsulated semiconductor device when the first signal connection lead portion 13 is mounted. Yes, BGA, LGA (land and
Grid array).

In this embodiment, the example of the first and second signal connection leads in a two-row configuration has been described. However, a three-row configuration or more can be employed. May be circular, square, or polygonal. In addition, in order to easily separate the connecting portion 24,
The resin film 16 side is thinly processed by etching or the like. In the present embodiment, the lead frame structure 25 is 200 [μm], and the connecting portion 24 is etched.
It was approximately 50 [μm] to 30 [μm]. The connecting portion 24 is connected to the lead frame structure 25 and the first and second signal connection lead portions 13 and 19 while preventing deformation of the lead frame member 25 and the resin film 16 after bonding.
Any shape can be used as long as it is easily separated.

When the thickness of the post portion or the die pad portion is the same as that of the lead frame structure, the post portion or the die pad portion can be connected and integrally processed at the connecting portion, and there is no need to prepare a separate metal plate, so that an efficient manufacturing method can be realized. It is. In addition, the material of the die pad portion and the material of the lead frame structure can be different from each other. In the case of the die pad portion requiring heat radiation characteristics, a material having good copper (Cu) -based heat characteristics is used. Considering the influence of heat in each manufacturing process, it is also possible to use 42 alloy. By using the lead frame of the present embodiment, a small, thin, and highly reliable resin-encapsulated semiconductor device in which external terminal portions are arranged on the bottom surface in a matrix is efficiently produced.

Next, another method of manufacturing the lead frame of the present embodiment will be described with reference to the drawings.

FIGS. 7, 8, 9 and 10 are plan views showing a method of manufacturing a lead frame according to the present embodiment.

First, as shown in FIG. 7, as a first step,
A frame 15 is formed in a metal plate made of a copper material or the like constituting a lead frame by etching or pressing to form a frame 15 in the metal plate.
5, an opening region 23 is formed in the region 5, and the opening region 23 is formed.
A first signal connection lead portion 13 serving as a first external terminal portion 14 and a second signal connection lead portion connected to the first signal connection lead 13 by a connection portion 24 so as to protrude from the first signal connection lead portion 13. 19, and a second external terminal 20 forming an external electrode on the back surface of the second signal connection lead 19,
A metal lead frame structure 25 is formed. Here, the first signal connection lead 13 (the first external terminal 1
4), the second signal connection lead 19 (second external terminal 20) and the connection 24 connecting and connecting the second signal connection lead 19
It is connected to and supported by the frame 15 by the support portion 28. Therefore, the first signal connection lead portion 13
The end of the (first external terminal portion 14) on the side not connected to the connecting portion 24 is not connected to the frame 15.

Next, as shown in FIG. 8, as a second step,
The resin film 16 is brought into close contact with the lead frame structure 25. In this case, as shown by the broken line in the figure, the resin film 16 is brought into close contact with an area that reliably covers the opening region 23. Further, the adhesion of the resin film 16 is determined by the first signal connection lead portion 13 (first external terminal portion 14) and the second signal connection lead portion 19 (formed in the region of the lead frame structure 25). The second external terminal section 20) is carried out so as to be in close contact with the frame 15 and, for example, is adhered using a resin film with an adhesive. However,
It does not adhere to the bottom surface of the connecting portion 24. In this state, the adhesive surface of the resin film 16 is exposed in the opening region 23.

Next, as a third step, the second signal connection lead 19 (the second signal connection lead 19) connected to the first signal connection lead 13 (the first external terminal 14) by the connection 24.
The connecting portion 24 and the supporting portion 28 of the external terminal portion 20) are peeled off or separated by laser cutting, etching, or the like, and the first signal connecting lead portion 13 (the first 1 external terminal section 1
4) and the second signal connection lead 19 (second external terminal 20). Here, the connecting portion 24 may have a shape that can be easily peeled off.
Are connected to the frame 15 at four locations at each corner, but may not be at the corners or at four locations. When manufacturing the resin-encapsulated semiconductor device, each signal connection lead is It suffices if it can maintain a state of being stably held.

Next, as shown in FIG. 9, in a fourth step, a metal plate 26 made of copper or the like and different from the metal plate used in FIG. Then, the post part 21 or the die pad part 18 is formed. In this case, in order to hold the post portion 21 or the die pad portion 18 on the metal plate 26, a connection portion 27 is formed, and the post portion 21 or the die pad portion 18 is connected to the metal plate 26. The post portions 21 are connected and held by the connecting portions 27 so that the individual post portions 21 do not come off. Since the connection portion 27 is configured to be easily cut by etching or the like, it is easy to separate the post portion 21 or the die pad portion 18 from the metal plate 26 and take out the post portion 21 or the die pad portion 18.

As a fifth step, as shown in FIG. 10, the die pad 18 or another die plate made of another metal plate as shown in FIG. The post portion 21 is fixed, and a lead frame having no suspension lead portion for supporting the die pad portion 18 and each signal connection lead portion can be obtained. Here, the first signal connection lead portion 13 (first external terminal portion 14) is separated from the frame 15 and the second signal connection lead portion 19 (second external terminal portion 20) is also separated from the frame. The frame 15 is formed separately from and independent of the first signal connection lead portion 13 (first external terminal portion 14).

In FIG. 10, the portion shown by the broken line is the area where the resin film 16 is in close contact, and is in close contact with the area that reliably covers the opening area 23. Also, the line of the frame opening edge 22 which is the edge between the opening area 23 inside the frame 15 and the frame 15 becomes a sealing line when the semiconductor element is mounted and sealed with resin. In FIG. 10, the post part 21 and the die pad part 18 are shown in the same drawing for the sake of convenience. , Post portion 21, or die pad portion 18 can be used.

Normally, before the resin film 16 is brought into close contact with the lead frame structure 25, the post portion 21, the die pad portion 18 and the like, nickel (Ni),
A plating step of applying metal plating such as palladium (Pd), silver (Ag), gold (Au), or two-color plating is provided.

By the above steps, the resin film 1
6, the post part 21 or the die pad part 18 which does not need the suspension lead part, the first signal connection lead part 13 (the first external terminal part 14), and the second signal connection lead part 19 ( A lead frame including the second external terminal 20) can be obtained. That is, by using the lead frame of the present embodiment, the first signal connection lead portion 13 (first
And the second signal connection lead portion 19).
With the (second external terminal portion 20), a land serving as an external terminal can be formed, and a resin-encapsulated semiconductor device in which matrix electrodes manufactured from a lead frame are arranged on the package bottom surface can be obtained.

The thickness of the lead frame of this embodiment is 200 [μm], and the thickness of the post portion 21 or the die pad portion 18 is 300 [μm].
It was configured to be 100 [μm] thick. By forming the post part 21 or the die pad part 18 thicker than other configurations, when a semiconductor element larger in size than the post part 21 or the die pad part 18 is mounted, the semiconductor element mounted on each signal connection lead part is There is no contact, and a large semiconductor element can be mounted, and a small resin-sealed semiconductor device with the post portion 21 or the die pad portion 18 exposed can be realized.

The lead frame of this embodiment makes it possible to mount a large semiconductor element by eliminating the suspension lead portion, and to expose the first and second portions of the post portion or the die pad portion.
This is a lead frame capable of realizing a small and thin resin-sealed semiconductor device in which the signal connection leads are arranged in a matrix on the bottom surface. Further, according to the lead frame of the present embodiment, the number of signal connection lead portions can be appropriately arranged according to the number of electrodes of the semiconductor element and the like, and can be arranged in a lattice or staggered shape as necessary.

In the present embodiment, an example of the signal connection lead portion having a two-row configuration has been described. However, it is also possible to use a three-row configuration or more, and the shape of the external terminal portion may be circular, square, or polygonal. . Further, the resin film 16 side is processed by etching or the like so that the connecting portion 24 and the supporting portion 28 can be easily peeled off. In the present embodiment, the lead frame structure 25
Is 200 [μm], and the connecting portion 2 is changed from approximately 50 [μm] to 30 [μm] by etching. Further, when the thickness of the post portion 21 or the die pad portion 18 is the same as that of the lead frame structure 25, there is no need to prepare separately by connecting with the connecting portion 24 or the supporting portion 28, and an efficient manufacturing method is possible. Further, the material of the die pad portion 18 and the material of the lead frame structure 25 can be made different from each other.
u) The material having good system characteristics and the lead frame structure 25 can be made of 42 alloy in consideration of the influence of each step due to heat.

Next, an embodiment of the resin-sealed semiconductor device of the present invention will be described with reference to the drawings.

In the resin-encapsulated semiconductor device of the present embodiment, a first signal connection lead portion and a second external terminal portion which constitute a first external terminal portion which is a part of a lead frame member. The second signal connection lead portion is arranged in a matrix on the package bottom surface, and the die pad portion or the post portion is exposed from the package bottom surface.

FIG. 11 is a view showing a resin-encapsulated semiconductor device of the present embodiment. FIG. 11 (a) is a perspective top view, FIG. 11 (b) is a perspective bottom view, and FIG. FIG. 11C is a cross-sectional view taken along a line AA1 in FIG.

As shown in FIG. 11, the resin-encapsulated semiconductor device of this embodiment has a semiconductor element 29 mounted on a die pad 18 with an adhesive, a first signal connection lead 13, and A first external terminal portion 14 serving as an external terminal on the back and bottom surfaces, a second signal connection lead portion 19,
A second external terminal portion 20 serving as an external terminal on the back surface and the bottom surface; a thin metal wire 30 electrically connecting each of the signal connection leads 13 and 19 to the semiconductor device 29; a semiconductor device 29 and a die pad portion 18; Top and side regions of the first,
The top and side surfaces of the second signal connection leads 13, 19,
The first and second signal connection lead portions 13 and 19 exposed from the sealing resin 31 are formed of a sealing resin 31 sealing the thin metal wires 30.
Of the external terminal portions 14 and 20 described above.

In the resin-encapsulated semiconductor device of this embodiment, the sealing resin 31 does not exist on the lower surface side of the first and second signal connection leads 13 and 19, and the first signal connection The lower surface and a part of the side surface of the lead portion 13 are exposed, and the lower surfaces of the first and second signal connection lead portions 13 and 19 and the lower surface of the die pad portion 18 are connection surfaces with the mounting substrate.
That is, the first and second signal connection lead portions 13 and 19
Are first and second external terminal portions 14 and 20 and are arranged in a matrix on the bottom surface of the resin-encapsulated semiconductor device.

On the exposed portion of the die pad portion 18 and on the lower surfaces of the first and second external terminal portions 14 and 20, resin burrs, which are portions of the resin that protrude in the resin sealing step, are provided on the lead frame used. It does not exist due to the function of the resin film, and the reliability of bonding with the electrodes of the mounting board is improved. Note that the die pad portion 18 and the first and second
The exposed structure of the external terminal portions 14 and 20 can be realized by a manufacturing method described later.

In the present embodiment, as shown in a plan perspective view of the resin-encapsulated semiconductor device in FIG. 12, an external terminal portion serving as an external connection portion is provided on the side of the first signal connection lead portion 13. Does not exist, and the first and second signal connection lead portions 13,
Since the lower part of 19 is the first and second external terminal portions 14 and 20, the size of the resin-encapsulated semiconductor device can be reduced. That is, by forming the exposed surfaces of the signal connection lead portions 13 and 19 and the surface of the sealing resin 31 on substantially the same surface, a small resin sealing in which the lead portions do not protrude from the resin-sealed semiconductor device. It is possible to realize a stop-type semiconductor device. FIG. 12 shows a configuration in which the semiconductor element 29 is larger than the support member (die pad portion or post portion), and the configuration shown by the broken line shows the die pad portion 18 and the post portion 21 as support members for supporting the semiconductor element. In practice, either the die pad portion 18 or the post portion 21 is selected and used as a support member for a semiconductor element.

Here, the feature of the resin-encapsulated semiconductor device of this embodiment is that the first and second signal connection lead portions 13 and 1 are provided.
9 are arranged in a matrix, and a small-sized, multi-terminal resin-sealed semiconductor device is realized at low cost using a lead frame. Because of the absence of the above, the mounting range of the semiconductor element larger than the post part 21 or the die pad part 18, which has been conventionally limited, can be expanded.

In the resin-sealed semiconductor device having the post portion 21, the supporting portion of the semiconductor element 29 exposed from the bottom of the sealing resin 31 is small, and the bottom of the semiconductor element 29 is covered with the sealing resin 31. Therefore, the semiconductor device has high water resistance due to stress after mounting, is excellent in reliability, and can reduce restrictions imposed on the wiring pattern design of the mounting substrate.

Further, in the resin-sealed semiconductor device having the die pad portion 18, the portion exposed from the bottom surface of the sealing resin 31 is connected to the mounting substrate by soldering or the like, so that the heat radiation characteristics are improved. Is soldered, mechanical and thermal stresses applied to the external terminals can be dispersed, and connection reliability is improved. In addition, unlike the other BGAs at the time of mounting, most of the external terminals are inspected for connection using a conventional QFP, which is characterized in that a solder portion is formed on the side surface of the first signal connection lead portion 13 which is soldered to the mounting board. Becomes possible as well. Further, it is possible to solve the conventional problems in productivity and manufacturing due to deformation of the suspension lead portion in the manufacturing process.

Further, in the resin-sealed semiconductor device of the present embodiment, each of the external terminals 14, 20 and the post 21 or the die pad 18 is projected from the surface of the sealing resin 31, that is, the lower surface of the sealing resin 31. When the resin-encapsulated semiconductor device of the present embodiment is mounted on a mounting substrate, the external terminals 14, 20 and the post 21 or the die pad 18 are bonded to the electrodes of the mounting substrate. The standoff heights of the terminal portions 14, 20 and the post portion 21 or the die pad portion 18 are secured in advance. Therefore, the external terminal portions 14, 20
Can be used as external electrodes as they are, and there is no need to attach solder balls or the like to the external terminal portions 14 and 20 for mounting on a mounting board, which is advantageous in terms of man-hours and manufacturing costs.

Next, a method for manufacturing the resin-encapsulated semiconductor device of the present embodiment will be described with reference to the drawings. FIGS. 13A to 13F are cross-sectional views illustrating the steps of manufacturing the resin-encapsulated semiconductor device of the present embodiment. This is the same as the method of manufacturing a semiconductor device having the post portion 21 or the die pad portion 18. Here, a resin-sealed semiconductor device having the die pad portion 18 will be described as an example.

First, as shown in FIG. 13A, as a first step, a first signal connection lead portion 13 (first external terminal portion 14) and a second signal connection The lead portion 19 (the second external terminal portion 20) is supported by the connecting portion, and at least the bottom surfaces of the frame 15, the first signal connection lead portion 13 and the second signal connection lead portion 19 are made of resin. The die pad portion 18 is formed on the resin film 16 which is in close contact with the film 16 and which is exposed at the opening where the respective distal ends of the second signal connection lead portions 19 extend.
A lead frame to which is fixed is prepared. That is, the lead frame shown in FIG. 1 is prepared.

Next, as shown in FIG. 13B, as a second step, a semiconductor element 29 is mounted on the die pad portion 18 of the prepared lead frame with an adhesive. This step is a so-called die bonding step.

Then, as shown in FIG. 13C, as a third step, the semiconductor element 2 mounted on the die pad portion 18 is formed.
9 and the first and second signal connection leads 13 and 19 are electrically connected to each other by a thin metal wire 30. This step is a so-called wire bonding step.

Next, as shown in FIG. 13D, in a fourth step, the lead frame with the semiconductor element 29 mounted on the die pad portion 18 and the resin film 16 adhered thereto is placed in a sealing mold. And press the tip end side (outer frame) of the first signal connection lead portion 13 of the lead frame together with the resin film 16 with a mold to form the sealing resin 31 in the mold.
And the semiconductor element 29 is sealed with a sealing resin 31.

The resin film 16 is a mask for preventing the sealing resin 31 from wrapping around the lower surface of the die pad portion 18 and the lower surfaces of the first and second signal connection lead portions 13 and 19 during the resin sealing. The presence of the resin film 16 prevents the formation of resin burrs on the lower surface of the die pad portion 18 and the back surfaces of the first and second signal connection lead portions 13 and 19. it can.

As described in the description of the lead frame of the present embodiment, the resin film 16 is a film or tape-shaped member based on a resin mainly composed of polyethylene terephthalate, polyimide, polycarbonate or the like. After stopping, any adhesive may be used as long as the adhesive strength is reduced by chemical treatment or UV irradiation, the adhesive can be peeled off from the lead frame main body, and the resin is resistant to a high temperature environment at the time of resin sealing.

In this embodiment, an adhesive resin film 16 containing polyimide as a main component is used.
[Μm] film was used.

Next, as shown in FIG. 13E, as a fifth step, a resin film 16 adhered to the lower surface of the die pad portion 18 and the rear surfaces of the first and second signal connection lead portions 13 and 19 is subjected to chemical treatment. The adhesive strength is weakened by treatment or UV irradiation and removed by peel-off. As a result, the structure of the first and second external terminal portions 14 and 20 and the die pad portion 18 projecting below the back surface of the sealing resin 31 is formed. Here, regarding the setting of the amount of protrusion, the resin film 1
6, the first and second external terminal portions 14, 20,
The protrusion amount of the die pad portion 18 can be adjusted. FIG. 13 (e)
In the above, for the sake of convenience, the protrusion amount of the lead portion (external terminal portion) and the die pad portion is suppressed.

Finally, as shown in FIG. 13 (f), as a sixth step, the tip side of the first signal connection lead portion 13 is
By separating so as to be substantially the same as the side surface of the sealing resin 31, the first and second external terminal portions 14 and 20 are arranged in a matrix as shown in FIG. The resin-encapsulated semiconductor device in which is exposed from the lower surface of the encapsulation resin 31 is completed.

According to the manufacturing method of this embodiment, the adverse effect of the resin moldability due to the existence of the suspension leads as in the prior art is eliminated, voids are generated in the resin, the yield is reduced, and a large amount of semiconductor element mounting is required. The occurrence of unfilling due to the influence can be reduced. Further, by increasing the thickness of the bonding die in the die bonding step, the semiconductor element can be arranged on the second signal connection lead portion 19, and the mounting range can be expanded. Further, the space of the suspension lead portion can be used for the arrangement of the signal connection lead portions, and the degree of freedom in designing the lead frame can be improved. In addition, by removing the suspension lead portion, the restriction on the connection of the thin metal wire and the restriction on the mounting of the semiconductor element are eased, so that the back surface of the die pad portion with good productivity protrudes from the back surface of the sealing resin. A semiconductor device can be easily manufactured.

Moreover, according to the manufacturing method of this embodiment,
A resin film is attached to the lower surface of the die pad portion and the back surface of each signal connection lead portion before the resin sealing process, so that the sealing resin does not flow around during the sealing process, and the die pad portion and the external terminals No resin burrs are generated on the back surface of the signal connection lead portion. Therefore, it is not necessary to remove the resin burr formed on the lower surface of the die pad portion or on the external terminal portion by a water jet or the like as in the conventional method of manufacturing a resin-encapsulated semiconductor device that exposes the lower surface of the signal connection lead portion. Absent. That is, by eliminating the troublesome process for removing the resin burr, the process in the mass production process of the resin-encapsulated semiconductor device can be simplified. Further, the peeling of the metal plating layer of nickel (Ni), palladium (Pd), gold (Au) or the like on the lead frame, which has conventionally been caused in the resin burr removing step using a water jet or the like, and the adhesion of impurities can be eliminated. Therefore, the pre-plating quality of each metal layer before the resin sealing step is improved.

Above all, in the water jet process conventionally required, quality problems such as peeling of the metal plating of the lead frame and adhesion of impurities occur. However, in the method of this embodiment, the resin film is stuck. Accordingly, the point that the water jet is not required and the peeling of the plating can be eliminated is a great advantage in the process. In addition, even if resin burrs may occur due to the state of application of the resin film, the resin burrs are extremely thin. Is possible.

In the resin sealing step, the resin film is softened and contracted by the heat of the sealing mold, so that the die pad and the signal connection lead bite into the resin film, and the die pad and the sealing resin are removed. , And between the back surface of each signal connection lead portion and the back surface of the sealing resin. Therefore, the die pad portion and the signal connection lead portion have a structure protruding from the back surface of the sealing resin, and the stand-off height of the die pad portion and the protrusion amount of the external terminal portion below the signal connection lead portion (stand-off height). ) Can be secured. For example,
In the present embodiment, the thickness of the resin film 12 is set to 50 [μ].
m], the protrusion amount is, for example, 20 [μ
m].

As described above, by adjusting the thickness of the resin film, the amount of protrusion of the external terminal portion from the sealing resin can be maintained at an appropriate amount. This means that the standoff height of the external terminals can be controlled only by setting the thickness of the resin film,
This means that it is not necessary to separately provide a means or a step for controlling the standoff height amount, which is a very advantageous point in the cost of the process control in the mass production process. In addition, the thickness of this resin film is 10 to 150 [μm].
It is preferred that it is about. Further, as for the resin film to be used, a material having a predetermined hardness, thickness and softening property by heat can be selected according to a desired protrusion amount. However, in the present embodiment, the standoff height of the die pad portion or the external terminal portion may be adjusted by adjusting the pressure applied to the resin film, and, of course, the standoff height is substantially set to 0 [μm]. It is also possible.

Next, another embodiment of the resin-sealed semiconductor device of the present invention will be described. FIG. 14A is a perspective bottom view showing the resin-sealed semiconductor device of the present embodiment, and FIG.
FIG. 4B is a cross-sectional view illustrating the resin-sealed semiconductor device of the present embodiment. The semiconductor device of this embodiment is a resin-sealed semiconductor device using the lead frame shown in FIG.

As shown in FIG.
It has the same configuration as the resin-encapsulated semiconductor device shown in 1,
The description of the common configuration is omitted. In the resin-encapsulated semiconductor device of the present embodiment, the first signal connection lead portion 13 (first external terminal portion 14) is not exposed from the side surface of the sealing resin 31 of the resin-encapsulated semiconductor device, and the bottom surface is It is arranged on the side. Then, the first signal connection lead portion 13 (first external terminal portion 14) and the second signal connection lead portion 19 (second
Are arranged in a matrix on the bottom surface of the sealing resin 31. There are no external terminals on the sides of the first and second signal connection leads 13, 19, and the lower portions of the first and second signal connection leads 13, 19 are first and second. Since the external terminals 14 and 20 are provided, the size of the resin-encapsulated semiconductor device can be reduced. In addition, in the resin-sealed semiconductor device of the present embodiment, structurally, a reinforcing land for improving mounting reliability can be provided at a corner of the semiconductor device. In order to further increase the reliability, solder balls may be provided on the first and second external terminal portions 14 and 20.

Next, the method for manufacturing the resin-sealed semiconductor device of the present embodiment is the same as the process shown in FIG. 13, and description of common parts is omitted. According to the manufacturing method in the case of the stop-type semiconductor device, it is not necessary to cut the first external terminal portion 14 with a mold after the sealing, so that the interface between the sealing resin and the first signal connection lead portion 13 by cutting is not required. Is applied, and the defect of peeling off can be eliminated. Further, it is possible to prevent the yield in the cutting step from being reduced due to the resin burr falling at the cut portion on the side surface, the contact failure in the inspection step, the connection failure due to the resin falling during mounting, and the failure due to the abrasion of the cutting die.

Next, various other embodiments of the resin-sealed semiconductor device of the present invention will be described. The basic structure of the resin-encapsulated semiconductor device in this embodiment is the same as the structure in each of the above-described embodiments, except for the shape of the post or the die pad, or the configuration of the signal connection lead. Therefore, in the present embodiment, the shapes of the post portion, the die pad portion, and the signal connection lead portion will be described, and description of the other portions will be omitted.

FIG. 15 is a sectional view showing a resin-sealed semiconductor device of this embodiment. As shown in FIG. 15, the die pad portion 18 includes first and second signal connection lead portions 13 and 1.
9 is formed thicker. In this case, the same applies to the case where a post portion is employed instead of the die pad portion 18.

According to the resin-encapsulated semiconductor device of this embodiment, since the thickness of the die pad portion 18 is large, the semiconductor element 29 larger than the outer shape of the die pad portion 18 is formed.
Can be easily mounted, and a part of the semiconductor element 29 can be disposed on the tip end of the second signal connection lead 19 so as to be further out. According to the structure of the present embodiment, the sealing resin 31 comes into close contact with the back surface of the semiconductor element 29, thereby improving the adhesive force and realizing a resin-sealed semiconductor device having good moisture resistance. Mounting a large semiconductor element is an effective means for reducing the size. Also,
The die pad portion 18 may be a mounting area smaller than the semiconductor element 29, and is excellent in versatility even when the size of the semiconductor element is changed. The common use range of the lead frame is wider than other semiconductor devices, contributing to production efficiency. it can.

Next, in the resin-encapsulated semiconductor device shown in FIG. 16, the die pad portion 18 is thicker than the first and second signal connection lead portions 13 and 19, and the die pad portion 18 is formed.
A convex portion 32 is formed by half-etching or the like on the back surface of the substrate.

According to the resin-encapsulated semiconductor device shown in FIG. 16, the rear surface side of the die pad portion 18 has a stepped shape in which the convex portion 32 is formed at the center, and only the lower portion of the convex portion 32 has the sealing resin 31. , The holding force of the sealing resin 31 on the die pad portion 18 is increased, the reliability of the resin-encapsulated semiconductor device is improved, and the die pad portion 1 is exposed.
Since the thickness of the die pad portion 18 is large,
It is possible to easily mount the semiconductor element 29 larger than the external shape of the semiconductor device, and to arrange a part of the semiconductor element 29 on the tip of the second signal connection lead portion 19 so that the semiconductor device 29 can be put out further. The limitation on the size of the element 29 can be relaxed. In other words, the size as a resin-encapsulated semiconductor device for semiconductor elements of the same size can be reduced.

Next, in the resin-sealed semiconductor device shown in FIG. 17, the structure of the signal connection lead is shown, and in particular, a partially enlarged cross section of the signal connection lead is shown.

As shown in FIG. 17, the resin-encapsulated semiconductor device according to the present embodiment includes first and second signal connection lead portions 1.
The shapes of 3 and 19 have a groove 33 on the surface and a wide portion on the upper side. As a characteristic point, the thin metal wire 30 is connected between the grooves 33 on the upper surfaces of the first and second signal connection leads 13 and 19. As described above, the first and second signal connection lead portions 13 and 19 have the groove portion 33 or the wide portion, or both of them, so that the adhesion between the lead portion and the sealing resin 31 (anchor effect). Can be improved, stress applied to the first and second external terminal portions 14 and 20 and stress applied to the thin metal wires 30 can be reduced, and the reliability of the product can be maintained. That is, the sealing resin 31
From the external terminal portion can be prevented from coming off. Further, stress due to mounting is applied to the first and second external terminal portions 14 and 20, but a groove 33 is formed above the first and second external terminal portions 14 and 20. Has formed,
The stress applied to the external terminal portion can be absorbed and reduced by the groove portion 33. It goes without saying that various modifications can be made without departing from the spirit of the present invention. For example, the gold wire connection portion may be arranged away from the groove above the external terminal portion. In this case, the connection length of the thin metal wire can be shortened, and the productivity is improved. In addition, the gold wire connection portion may be disposed outside the groove 33 above the second external terminal portion 20, and a large semiconductor element can be mounted.

Further, as the configuration of the external terminals of the resin-encapsulated semiconductor device, the first signal connection lead portion 13 (first external terminal portion 14) is connected to the second signal connection lead portion 19.
The length of the long side of the second signal connection lead 19 (the second external terminal 20) is reduced by extending the area of the (second external terminal 20) to be small and extending near the die pad 18. , The number of external terminals arranged in a matrix can be increased. In addition, by increasing the area of the first external terminal section 14, the connection area with the mounting substrate is increased to improve the thermal and mechanical resistance of the first external terminal section 14 to which a large amount of stress is applied. In addition, a semiconductor device with high connection reliability and an increased number of external terminals can be supplied.

It goes without saying that various modifications can be made without departing from the scope of the present invention. However, by variously combining the present embodiments, the reliability and the size of the semiconductor element and the number of electrode pads can be reduced. The number and arrangement of external terminals arranged in a matrix of a suitable semiconductor device can be selected.

[0123]

As described above, according to the present invention, the resin film is brought into close contact with the bottom surface side of the lead frame having the first and second signal connection lead portions, and the bottom surface of the die pad is fixed to the opening portion. A small-sized, multi-terminal semiconductor device capable of mounting semiconductor elements by exposing the lower surfaces of the terminal portion and the die pad portion from the sealing resin has become possible.

Further, in the manufacturing process of the resin-encapsulated semiconductor device, the die pad portion is fixed to the resin film, so that the connection of the thin metal wire between the semiconductor element and the lead portion can be stabilized, and the resin having good productivity can be obtained. A sealed semiconductor device can be realized.

Further, due to the presence of the die pad portion which is thicker than the thickness of the external terminal portion, the semiconductor element can be attached to the die pad portion above the second signal connection lead portion, and the second signal connection portion can be provided. It is possible to realize a small-sized resin-encapsulated semiconductor device having high productivity and high mounting reliability, in which a semiconductor element larger than the tip of the lead portion is mounted.

Further, by providing a wide portion and a plurality of grooves on the surface of the signal connection lead portion, the sealing resin enters the groove portion, and the external terminal is formed by the anchor effect and the effect of the wide portion. Even if the portion protrudes from the bottom surface of the sealing resin, the adhesion to the resin is improved, so that it is possible to realize a resin-sealed semiconductor device having improved various reliability including mounting reliability. Furthermore, by arranging the exposed surface of the external terminal and the lower surface of the die pad portion so as to protrude from the sealing resin surface, it is easy to open a space between the mounting substrate and the bottom surface of the semiconductor device. A semiconductor device can be realized.

[Brief description of the drawings]

FIG. 1 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 2 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 3 is a plan view showing a method for manufacturing a lead frame according to one embodiment of the present invention;

FIG. 4 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 5 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 6 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 7 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 8 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 9 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 10 is a plan view showing a method for manufacturing a lead frame according to an embodiment of the present invention.

FIG. 11 is a view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 12 is a diagram showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 13 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 14 is a view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 15 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 16 is a sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 17 is a sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 18 is a sectional view showing a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Adhesive 3 Double-sided printed wiring board 4, 5 Wiring pattern 6 Through hole 7 Conductor 8 Electrode pad 9 Fine metal wire 10 Solder resist 11 Resin 12 Solder ball 13 First signal connection lead part 14 First external terminal Unit 15 Frame 16 Resin film 17 Opening 18 Die pad 19 Second signal connection lead 20 Second external terminal 21 Post 22 Frame opening edge 23 Opening area 24 Connection 25 Lead frame structure 26 Metal plate 27 connecting part 28 supporting part 29 semiconductor element 30 thin metal wire 31 sealing resin 32 convex part 33 groove part

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/12 H01L 23/28 A 23/28 23/12 L

Claims (16)

[Claims] 1. A frame connection, an opening provided in an area of the frame, and a first signal connection lead connected to the frame near an opening edge of the opening. A second signal connection lead portion separately and independently disposed in a region inside the first signal connection lead portion; and a semiconductor element support provided in a substantially central region of the opening. A member, at least a region of the opening, and a portion of the frame, the first signal connection lead, the second signal connection lead, and a back surface of the semiconductor element support member. A lead frame comprising a resin film adhered to the lead frame. 2. A frame connection, an opening provided in an area of the frame, and a first signal connection lead disposed near and independently from the frame near an opening edge of the opening. Part, a second signal connection lead part separately and independently disposed in a region inside the first signal connection lead part, and a semiconductor element provided in a substantially central region of the opening. A support member, at least a region of the opening, and a part of the frame, the first signal connection lead, the second signal connection lead, and a back surface of the semiconductor element support member A lead frame comprising a resin film adhered to a lead frame. 3. The lead frame according to claim 1, wherein the semiconductor element supporting member is a rectangular die pad portion. 4. The semiconductor device supporting member according to claim 1, wherein said semiconductor device supporting member comprises a plurality of post members.
The lead frame according to 1. 5. A groove portion is provided above one of the first signal connection lead portion and the second signal connection lead portion, or the upper portion of the first signal connection lead portion and the second signal connection lead portion. The lead frame according to claim 1, wherein the lead frame is provided. 6. A wide portion is provided above any one of the first signal connection lead portion and the second signal connection lead portion, or the first signal connection lead portion and the second signal connection lead portion. The lead frame according to claim 1, wherein the lead frame is provided. 7. The semiconductor device supporting member according to claim 1, wherein the thickness of the semiconductor element supporting member is larger than the thickness of the first signal connecting lead portion and the second signal connecting lead portion. The lead frame according to 1. 8. The semiconductor device supporting member according to claim 1, wherein the semiconductor element supporting member has a convex portion at a lower portion thereof.
The lead frame according to 1. 9. An opening, a first signal connection lead connected to the frame near an opening edge of the opening in a region of the opening, and Forming a second signal connection lead portion connected to the first signal connection lead portion by a connection portion in a region inside the signal connection lead portion to form a lead frame structure; A step of covering at least a region of the opening with respect to a frame structure, and bringing a resin film into close contact with the back surfaces of the first signal connection lead and the second signal connection lead; Cutting and removing, and separately and independently arranging the second signal connection lead portion on the resin film in the region of the opening, and fixing a semiconductor element supporting member on the resin film in the opening. And the process of Characteristic method of manufacturing a lead frame. 10. An opening, a first signal connection lead near an opening edge of the opening in a region of the opening, and the first signal connection lead with respect to the metal plate. A second signal connection lead portion connected to the first signal connection lead portion by a connection portion in a region inner than the first signal connection lead portion and a support portion for supporting the connection portion are formed, thereby forming a lead frame structure. A step of covering at least a region of the opening with respect to the lead frame structure, and bringing a resin film into close contact with the back surface of the first signal connection lead and the second signal connection lead. The connecting portion and the supporting portion are cut and removed, and the first signal connecting lead portion and the second signal connecting lead portion are separately and independently disposed on the resin film in the area of the opening. Process and on the resin film of the opening Fixing a semiconductor element supporting member. A method for manufacturing a lead frame, comprising: 11. In the step of bringing the resin film into close contact with the lead frame structure, the resin film is not brought into close contact with the back surface of the connecting portion connecting the first signal connection lead and the second signal connection lead. The method for manufacturing a lead frame according to claim 9, wherein: 12. A semiconductor device having an electrode pad, a support member supporting the semiconductor device, and a first signal connection electrically connected to the electrode pad of the semiconductor device and arranged around the support member. A second signal connection lead section electrically connected to an electrode pad of the semiconductor element and arranged in an area inside the first signal connection lead section; A connection member for electrically connecting the signal connection lead portion and the semiconductor element to the second signal connection lead portion, and at least the support member, the semiconductor element, the first signal connection lead portion, 2
The first signal connection lead and the second signal connection lead are separated and independent from each other, and the first signal connection lead and the second signal connection lead are separated and independent from each other. A resin-encapsulated semiconductor device, wherein bottom surfaces of the signal connection lead portion and the second signal connection lead portion constitute external terminals exposed from the sealing resin. 13. The resin-encapsulated semiconductor device according to claim 12, wherein the supporting member supporting the semiconductor element is smaller than the semiconductor element. 14. The thickness of a support member supporting a semiconductor element is greater than the thickness of the first signal connection lead and the second signal connection lead, and the semiconductor supported on the support member. 13. The resin-encapsulated semiconductor device according to claim 12, wherein an element is configured not to contact the first signal connection lead portion and the second signal connection lead portion. 15. A support member for supporting a semiconductor element has a step, and the first signal connection lead and the second signal connection lead have a groove on an upper surface thereof. The resin-encapsulated semiconductor device according to claim 12. 16. A frame connection, an opening provided in a region of the frame, and a first signal connection lead connected to the frame near an opening edge of the opening. A second signal connection lead portion separately and independently disposed in a region inside the first signal connection lead portion; and a semiconductor element support provided in a substantially central region of the opening. A member, at least a region of the opening, and a portion of the frame, the first signal connection lead, the second signal connection lead, and a back surface of the semiconductor element support member. A step of preparing a lead frame made of a resin film in close contact, a step of mounting a semiconductor element on the semiconductor element support member, and an electrode pad of the semiconductor element and the first signal connection lead portion; Signal connection lead Electrically connecting the first signal connection lead and the second signal connection in the upper surface area of the resin film, the outer periphery of the semiconductor element, the upper surface area of the semiconductor element support member, and the second signal connection. A method for manufacturing a resin-encapsulated semiconductor device, comprising: a step of sealing an upper surface region of a lead portion for use with sealing resin;