JP2000077033A - Fluorescent lamps and lighting devices - Google Patents

Abstract

(Problem) [Problem] A substance 7 having an n-type semiconductor characteristic is provided in a glass bulb 1 of an aperture type fluorescent lamp having an external electrode, or a conductive property is provided between the glass bulb 1 and a phosphor coating 2. It is an object of the present invention to improve the starting characteristics under a dark state by providing the substance 8. [Solution] A fluorescent film 2 is formed on an inner surface of a glass bulb 1 having an opening 3 along the tube axis direction of the tubular glass bulb 1.
Is formed on the outer surface of the glass bulb 1 along the tube axis direction.
A pair of external electrodes 4 and 5 are formed, and a rare gas containing xenon gas is sealed in the glass bulb 1. Between the glass bulb 1 and the phosphor coating 2, a conductive material 8 is formed in a strip shape along the circumferential direction of the glass bulb 1 with both ends exposed in the discharge space.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an aperture having an external electrode used for a document reading light source used in OA equipment such as an image scanner, a copying machine, a facsimile, etc., and a backlight of a liquid crystal display panel. And a lighting device comprising the same.

[0002]

2. Description of the Related Art Conventionally, fluorescent lamps having external electrodes have
For example, JP-A-4-87249 and JP-A-3-225
As disclosed in Japanese Patent Application Laid-Open Nos. 745-745, 6-1888087, 9-92226, and 9-92227, no electrodes are provided inside the glass bulb, and both ends are sealed. A pair of strip-shaped external electrodes are formed on the outer surface of the elongated tubular glass bulb along the axis of the bulb, and a phosphor coating is formed on the inner surface of the glass bulb along the axis of the bulb, leaving an opening that is a light projection window. An aperture type fluorescent lamp has been proposed in which a rare gas containing xenon gas as a main component is sealed at a sealing pressure of 200 Torr or less. This aperture-type fluorescent lamp supplies high-frequency power between the external electrodes to generate a high-frequency discharge in the glass bulb, and ionizes and excites a rare gas such as xenon gas sealed in the glass bulb to emit fluorescent light. Make the body emit light. The emitted visible light of the phosphor film and the light reflected by the band-shaped external electrode also serving as a reflective film are radiated to the outside from an opening (aperture) which is a transparent light projection window of the glass bulb. You.

The invention disclosed in Japanese Patent Application Laid-Open No. 9-92227 discloses an external electrode formed of a translucent member in order to improve light emission characteristics, and the external electrode and an opening serving as a light projection window. The visible light is radiated to the outside from both the portions (apertures).

Aperture type fluorescent lamps such as these are excellent in the rising characteristics of the light flux, and the opening (aperture) which is the light projection window is formed along the axial direction of the tube (bulb), so that it extends to the end of the bulb. By making the illuminance distribution uniform and increasing the size of the external electrodes, the discharge current can be increased and the light output can be increased.

However, the conventional fluorescent lamp having an external electrode can obtain a high light output, and is not inconvenient for use in a bright place in the daytime, but is inconvenient for use in a dark state such as at night. There was a problem that it took time to start the engine.

In order to solve the above-mentioned problem, a conductive substance is provided in the discharge space, and when electric power is supplied to the external electrodes from the outside, the discharge space is short-circuited and a high electric field is partially generated between the external electrodes. A method has been proposed in which ultraviolet rays are generated. As a specific example, for example, Japanese Patent Application Laid-Open No. 8-329903 discloses a fluorescent lamp in which a conductive material is provided in a dot shape inside an aperture-type fluorescent lamp having external electrodes to improve starting characteristics.

For example, in the fluorescent lamp shown in FIGS. 9 and 10, the fluorescent material located at the end of the fluorescent film 2 formed on the inner surface of the glass bulb 1 is removed along the circumferential direction, and this fluorescent lamp is removed. The conductive material 8 is applied to the part from which the body has been removed.

For example, in the fluorescent lamps shown in FIGS. 11 and 12, a conductive material 8 is formed in a band shape along the circumferential direction of the glass bulb 1 so as to be superposed on the inner surface of the phosphor coating 2.

[0009]

The invention disclosed in Japanese Patent Application Laid-Open No. Hei 8-329903 has an advantage that the starting characteristics in a dark state are improved, but a conductive material is provided in the glass bulb. Therefore, there is a problem that power consumption is increased, and energy consumption is uneconomical.

[0010] The fluorescent lamp shown in FIGS.
In order to expose the conductive material 8 into the discharge space, a predetermined amount of the phosphor has to be removed, and there is a problem that the removal operation is complicated.

The fluorescent lamps shown in FIGS. 11 and 12 are easily peeled off because a conductive substance is applied on the phosphor film 2. In addition, since a part of the opening (aperture) 3 is shielded by the conductive material 8, a portion of the phosphor coating 2 that does not emit light is generated. That is, since there is a portion that blocks light emission at the opening (aperture) 3, spots are generated in the light radiated from the opening (aperture) 3, and the light output from the opening (aperture) 3 is made uniform. Thus, there has been a problem that it is necessary to take measures such as removal of the phosphor coating on the portion other than the opening (aperture) 3 and interruption of light output from the phosphor and the aperture.

In order to eliminate the drawbacks of the above-mentioned prior art, the invention according to claims 1 to 4 and 6 to 11 of the present invention provides an n-type aperture type fluorescent lamp having a glass bulb inside an aperture type fluorescent lamp having external electrodes. An object of the present invention is to provide a fluorescent lamp which is provided with a substance having semiconductor characteristics to improve starting characteristics in a dark state and save power, and a lighting device incorporating the lamp.

According to the fifth and eleventh aspects of the present invention, the discharge space is short-circuited by the conductive material by interposing a conductive material between the glass bulb and the phosphor coating so that both ends are exposed in the discharge space. And a fluorescent lamp for generating a high electric field between the electrodes to improve the starting characteristics under a dark state and to make the light output from the aperture (aperture) uniform without interrupting the light emission from the phosphor. Aims to provide an integrated lighting device

[0014]

In order to achieve the above-mentioned object, according to the present invention, the invention according to claim 1 has an opening along a tube axis direction of a tubular glass bulb, and is provided on an inner surface of the glass bulb. A fluorescent lamp in which a phosphor film is formed, a pair of external electrodes is formed on the outer surface of the glass bulb along a tube axis direction, and a rare gas containing xenon gas is sealed in the glass bulb. N inside the glass bulb
Characterized in that at least one substance having a mold semiconductor characteristic is provided.

According to a second aspect of the present invention, there is provided the fluorescent substance coating, wherein the substance having the n-type semiconductor characteristic is located between the external electrodes and at one or both ends in the tube axis direction of the phosphor coating. Characterized by being provided on the inner surface.

According to the third aspect of the present invention, the material having the n-type semiconductor characteristic is located between the external electrodes and at one end of the phosphor coating in the tube axis direction or at one end. It is also conceivable to provide interposed between the phosphor coating and the glass bulb at both end positions.

The invention according to claim 4 of the present invention is characterized in that the substance having the n-type semiconductor characteristic is provided in a portion not sandwiched between external electrodes.

According to a fifth aspect of the present invention, there is provided a tubular glass bulb having an opening along a tube axis direction, a phosphor film formed on an inner surface of the glass bulb, and a tube formed on an outer surface of the glass bulb. A pair of external electrodes are formed along the axial direction,
In a fluorescent lamp in which a rare gas containing xenon gas is sealed in the glass bulb, a conductive substance is interposed between the inner surface of the glass bulb and the phosphor coating in a strip shape along a circumferential direction of the glass bulb. The conductive material is formed by exposing both ends of the conductive material to the discharge space from the edge of the phosphor film.

According to a sixth aspect of the present invention, a fluorescent film is formed on an inner surface of a glass bulb having an opening along a tube axis direction of the tubular glass bulb, and a tube is formed on an outer surface of the glass bulb. A pair of external electrodes are formed along the direction of
In a fluorescent lamp in which a rare gas including xenon gas is sealed in the glass bulb, a substance having an n-type semiconductor characteristic is provided between an inner surface of the glass bulb and the phosphor coating in a circumferential direction of the glass bulb. The material having the n-type semiconductor characteristics is formed by exposing both ends of the material having the n-type semiconductor characteristics to the discharge space from the edge of the phosphor film.

According to a seventh aspect of the present invention, the substance having the n-type semiconductor characteristic is a single covalent crystal,
Alternatively, it is a mixture of a simple substance of the covalent crystal and a binder.

The invention according to claim 8 of the present invention is characterized in that the substance having n-type semiconductor characteristics is a substance containing at least one or more inorganic compounds or a mixture of this substance and a binder. And

According to a ninth aspect of the present invention, the simple substance of the covalent crystal is made of germanium, silicon, selenium or the like.

The tenth aspect of the present invention is characterized in that the inorganic compound is zinc oxide.

According to an eleventh aspect of the present invention, there is provided an apparatus main body, the fluorescent lamp according to any one of the first to tenth aspects provided in the apparatus main body, and a connection to the fluorescent lamp. And a lighting circuit device.

[0025]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a partially cutaway front view of a fluorescent lamp, and FIG.
FIG. 2 is a sectional view taken along line AA of FIG. 1. Reference numeral 1 denotes a straight tubular transparent glass bulb, both ends of which are hermetically closed. 2
Is a phosphor coating formed on the inner surface of the glass bulb 1, and has an opening (aperture) 3 for light projection without the phosphor coating along the tube axis. A rare gas containing xenon (Xe) gas as a main component is sealed in the glass bulb 1 at a sealing pressure of 13.3 KPa.

On the outer surface of the glass bulb 1, a pair of strip electrodes 4, 5 are formed in parallel along the tube axis of the glass bulb 1. The electrodes 4 and 5 are made of, for example, aluminum (Al) or the like having conductivity and high light-reflection characteristics. More specifically, the electrodes 4 and 5 are formed by attaching an aluminum tape having a length substantially corresponding to the entire length of the glass bulb 1. It is also used as a reflective film by attaching to the outer surface. The strip-shaped electrodes 4 and 5 may be formed by attaching a copper tape in addition to an aluminum tape by an attaching means, or by applying a material having conductivity and high light reflection properties such as silver paste in a strip shape. Good. As shown in FIG. 2, the electrodes 4 and 5 are provided on the upper surface and the lower surface of the glass bulb 1 so as to be separated from each other. The edge is formed along the opening edge of the opening (aperture) 3. Lead wires (not shown) for electrically connecting to a lighting device (not shown) are connected to the electrodes 4 and 5, respectively. A transparent electric insulating layer 6 made of a silicone resin or the like is formed on the entire outer peripheral surface of the glass bulb 1 including these electrodes 4 and 5 to prevent a decrease in insulation of the glass bulb 1 to which moisture easily adheres. The short circuit between 4 and 5 is prevented.

On the inner peripheral surfaces of both ends of the phosphor coating 2 formed on the inner surface of the glass bulb 1, a substance 7 having n-type semiconductor characteristics is provided within a range of 15 mm or less from the inner wall surfaces at both ends of the glass bulb 1. ing. The substance 7 having n-type semiconductor properties is a substance of a covalent bond crystal such as germanium, silicon, or selenium, a substance containing one or more kinds of inorganic compounds such as zinc oxide, or a mixed substance of the substance and a binder. And any of these substances are used as appropriate. The substance 7 having the n-type semiconductor characteristic is attached to the inner surfaces of both ends of the phosphor film 2 by means such as directly welding to the inner surface of the phosphor film 2, coating, or bonding with an adhesive or the like. May be provided at any one end of the inner surface of the phosphor coating 2. The substance 7 having n-type semiconductor characteristics is shown in FIGS.
The shape is not limited to the arc shape as shown in FIG.

The fluorescent lamp of this configuration has external electrodes 4 and 5
, And connected to a high-frequency lighting circuit device (not shown) for lighting. When high frequency power is applied to the external electrodes 4 and 5,
A discharge is generated in the glass bulb 1 by a high-frequency electric field, and the xenon gas is ionized and excited by the discharge to emit ultraviolet rays. The ultraviolet rays are converted into visible light by the phosphor coating 2. This visible light is directly applied to the aperture (aperture) 3
The light which is radiated to the outside through the transparent portion of the glass bulb 1 and which is reflected by the inner surfaces of the electrodes 4 and 5 having the light reflection characteristic in the glass bulb 1 also passes through the opening (aperture) 3. It passes and is emitted to the outside. Most of the light emitted from the aperture-type fluorescent lamp is transmitted through a transparent light-emitting opening (aperture) 3 in which the fluorescent film 2 is not formed on the glass bulb 1. The light is radiated from the unit (aperture) 3. A small amount of light is emitted from a portion other than the opening (aperture) 3, for example, from a position facing the opening (aperture) 3 and where the electrodes 4 and 5 are not formed.

Incidentally, an electrode 4 having a width of about 8 mm is provided on the outer surface of a glass bulb 1 having a total length of about 270 mm (effective total length excluding the end is about 250 mm), an outer diameter of about 8 mm, and an inner diameter of about 7 mm.
In the case where zinc oxide alone is used as the substance 7 having n-type semiconductor characteristics, the power consumption of the lamp is reduced by 5 to 10% as compared with a fluorescent lamp using a conventional conductive substance. did it.

FIGS. 3 and 4 show another embodiment of the fluorescent lamp according to the present invention. In the figures, FIGS. 1 and 2
Portions having the same functions as those described above are denoted by the same reference numerals, and description thereof will be omitted. The fluorescent lamps shown in FIGS. 3 and 4 are different from the fluorescent lamps shown in FIGS. 1 and 2 in that a substance 7 having an n-type semiconductor characteristic is provided at both ends or at one end of the phosphor coating 2. It is interposed between the glass bulb 1.
The substance 7 having this n-type semiconductor characteristic is also used as the glass bulb 1
Is provided within a range of 15 mm or less from the inner surface of the end.

FIGS. 5 and 6 show another embodiment of the fluorescent lamp according to the present invention. A strip-shaped conductive material 8 having a predetermined width is provided along the circumferential direction between the glass bulb 1 and the phosphor coating 2. Both ends of the conductive material 8 are exposed in the discharge space from the edge of the phosphor coating 2. As the conductive substance 8, a substance containing at least one kind of silver paste, aluminum, graphite, tin oxide, indium oxide, barium, nickel, or the like, or a mixed substance of the substance and a binder is appropriately selected and used. As a method for providing the conductive material 8, a method of directly welding the inner surface of the glass bulb 1, a method of coating, or a method of fixing with an adhesive is adopted.

FIGS. 5 and 6 show that the conductive substance 8 is applied to the glass bulb 1 near one end in the longitudinal direction of the phosphor coating 2.
Between the glass bulb 1 and the phosphor coating 2, the conductive material 8 may be formed between the glass bulb 1 and the phosphor coating 2. If the position is at the center of the shaft or near the end, the position is arbitrary.

The fluorescent lamp having this configuration is connected to the high-frequency lighting circuit device 9 as shown in FIG.
When a high-frequency voltage is applied from the high-frequency lighting circuit device 9, the xenon discharge starts from the ends of the electrodes 4, 5 and the conductive material 8 in the internal discharge space of the glass bulb 1 sandwiched between the electrodes 4, 5. Is generated. Ultraviolet light generated by the discharge of xenon is converted into visible light by the phosphor coating 2 and radiated to the outside through the opening (aperture) 3. In this aperture-type fluorescent lamp, a conductive substance 8 is provided between the glass bulb 1 and the phosphor coating 2 inside the electrodes 4 and 5, and the ends are formed in an opening (aperture) 3 and the phosphor. Since it is configured to be exposed to the discharge space between the coatings 2,
When a voltage is applied between the electrodes 4 and 5, the discharge space is short-circuited due to the presence of the conductive substance 8, and a high electric field is partially generated between the electrodes 4 and 5, and discharge starts without delay even in darkness.

Further, since the conductive substance 8 is provided between the glass bulb 1 and the phosphor coating 1, the output of the light radiated from the aperture (aperture) 3 can be made uniform without interrupting the light emission from the phosphor. .

FIG. 7 is a graph showing the uniformity of the light output of the aperture type fluorescent lamp shown in FIGS. 5 and 6. In the figure, an aperture type fluorescent lamp provided with a conductive material in a discharge space indicated by a dotted line, that is, the fluorescent lamps of FIGS. 9 and 10 or FIGS. 11 and 12 are provided at a position (bulb) where the conductive material is provided. (At a position of 28 mm on the axis), the emission intensity is significantly reduced. In contrast, the aperture-type fluorescent lamp invented this time, that is, the fluorescent lamp in which a conductive substance is interposed between the glass bulb and the phosphor coating and the end is exposed to the discharge space, is used. There is no change in the light output even at the portion where the substance is provided, and the light output is uniform.

The material having the n-type semiconductor characteristics is used for the glass bulb 1 and the phosphor coating 2 in the same manner as the conductive material 8.
At an arbitrary position between them, a band is interposed in the circumferential direction with a predetermined lateral width, and both ends are located in the discharge space so as to be located at the opening (aperture) 3 and the end of the phosphor coating 2. It may be provided exposed.

FIG. 8 is a diagram showing an embodiment of another fluorescent lamp according to the present invention. In FIG. 8, a substance 7 having an n-type semiconductor characteristic is an end portion (sealing portion) of the glass bulb 1.
, And is not located between the electrodes 4 and 5. As described above, even when the substance 7 having the n-type semiconductor characteristic is provided at a position not sandwiched between the electrodes 4 and 5, there is an effect that the startability in a dark state is improved.

In the above embodiment, the material having the n-type semiconductor property is located between the external electrodes and at one or both ends of the phosphor coating or the lath valve and the phosphor coating. And the case where it is provided at a position that is not sandwiched between external electrodes has been described as an example, but the present invention is not limited to this and at least one or more positions are provided at any arbitrary position in the glass bulb. This includes all cases where a substance having an n-type semiconductor characteristic having an arbitrary shape is provided.

[0040]

According to the present invention, the starting characteristic in a dark state is provided by providing a substance having n-type semiconductor characteristics on the inner surface of the end of the glass bulb located between the high voltage side electrode and the low voltage side electrode. Has the economic effect of improving power consumption and reducing power consumption.

Further, a conductive material is provided between the glass bulb and the phosphor coating at the position of the external electrode, and the end is exposed to the discharge space between the opening (aperture) and the phosphor coating. Therefore, when a voltage is applied between the electrodes, the discharge space is short-circuited due to the presence of the conductive substance, a high electric field is generated between the electrodes, and there is an effect that the discharge starts without delay even in the dark.

Further, by connecting the fluorescent lamp having the above configuration to the lighting circuit device, there is an effect that the size and power consumption of the device can be reduced with the same illuminance.

[Brief description of the drawings]

FIG. 1 is a partially cutaway front view of a fluorescent lamp according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a partially cutaway front view of the fluorescent lamp according to the embodiment of the present invention.

FIG. 4 is a sectional view taken along line BB of FIG. 1;

FIG. 5 is a partially cutaway front view of the fluorescent lamp according to the embodiment of the present invention.

FIG. 6 is a sectional view taken along line CC of FIG. 5;

FIG. 7 is a diagram showing uniform characteristics of the light output of the fluorescent lamp according to the embodiment of the present invention.

FIG. 8 is a partially cutaway front view of the fluorescent lamp according to the embodiment of the present invention.

FIG. 9 is a partially cutaway front view showing a conventional example.

FIG. 10 is a sectional view taken along line DD of FIG. 9;

FIG. 11 is a partially cutaway front view showing a conventional example.

FIG. 12 is a sectional view taken along line EE of FIG. 11;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass bulb 2 Phosphor coating 3 Opening (aperture) 4, 5 electrode 7 Substance with n-type semiconductor characteristics 8 Conductive substance 9 High frequency lighting circuit

Claims (11)

[Claims] 1. A fluorescent coating is formed on an inner surface of a glass bulb having an opening along a tube axis direction of a tubular glass bulb, and a pair of external electrodes is formed on an outer surface of the glass bulb along a tube axis direction. Is formed, and a rare gas containing xenon gas is sealed in the glass bulb, wherein at least one or more substances having n-type semiconductor characteristics are provided inside the glass bulb. And fluorescent lamp. 2. The method according to claim 1, wherein the substance having the n-type semiconductor characteristic is provided at a position sandwiched between the external electrodes and at one or both inner surfaces of the phosphor coating in the tube axis direction. The fluorescent lamp according to claim 1, wherein 3. The phosphor coating at a position sandwiched between external electrodes and at one or both ends of the phosphor coating in a tube axis direction. 2. The fluorescent lamp according to claim 1, wherein the fluorescent lamp is provided between the glass bulb and the glass bulb. 4. The fluorescent lamp according to claim 1, wherein the substance having the n-type semiconductor property is provided in a portion not sandwiched between external electrodes. 5. A fluorescent film is formed on the inner surface of the glass bulb having an opening along the tube axis direction of the tubular glass bulb, and a pair of external electrodes is formed on the outer surface of the glass bulb along the tube axis direction. Is formed, and in the fluorescent lamp in which a rare gas containing xenon gas is sealed in the glass bulb, a conductive substance is provided between the inner surface of the glass bulb and the phosphor coating along the circumferential direction of the glass bulb. A fluorescent material, wherein the conductive material is formed in such a manner that both ends of the conductive material are exposed in the discharge space from the edge of the phosphor film. 6. A fluorescent film is formed on the inner surface of the glass bulb having an opening along the tube axis direction of the tubular glass bulb, and a pair of external electrodes is formed on the outer surface of the glass bulb along the tube axis direction. Is formed, and a rare gas containing xenon gas is sealed in the glass bulb, wherein n is provided between the inner surface of the glass bulb and the phosphor coating.
A substance having a type semiconductor characteristic is interposed in a strip shape along the circumferential direction of the glass bulb, and both ends of the substance having the n-type semiconductor characteristic are exposed to the discharge space from an edge of the phosphor coating. A fluorescent lamp characterized by being formed. 7. The method according to claim 1, wherein the substance having the n-type semiconductor property is a simple substance of a covalent crystal or a mixture of a simple substance of the covalent crystal and a binder.
The fluorescent lamp according to 2, 3, 4 or 6. 8. The method according to claim 1, wherein the substance having the n-type semiconductor property is a substance containing at least one kind of inorganic compound or a mixture of the substance and a binder. 7. The fluorescent lamp according to 4 or 6. 9. The fluorescent lamp according to claim 7, wherein the single covalent crystal is made of germanium, silicon, selenium or the like. 10. The fluorescent lamp according to claim 8, wherein said inorganic compound is zinc oxide. 11. An apparatus main body, a fluorescent lamp according to any one of claims 1 to 10 provided in the apparatus main body, and a lighting circuit device connected to the fluorescent lamp. A lighting device, comprising: