JP2000076624A - Yoke type magnetoresistive effect thin film magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain the head that reduces Barkhausen noise, that improves reproducing outputs as well as the resistance change ratio of a magnetoresistive effect element and that can realize a high recording density. SOLUTION: In the yoke type magnetoresistive effect thin film magnetic head, a magnetoresistive effect element 3 ('element') is plurally arranged in the track width direction under the yoke gasp 6G part of a magnetic field induction yoke 6 ('induction yoke'). Each element 3 is serially connected electrically with connecting wiring 41, the detecting current direction Is is set essentially parallelly to a signal magnetic field direction Ms. Magnetic connections 4M between the induction yoke 6 and the element 3 is arranged on the yoke gap 6G side from the electrical connections 4C between the connecting wiring 41 or lead wiring 4 and the element 3. In the magnetic connections 4M, a distance t2 between the induction yoke 6 and the element 3 is smaller than the distance t1 of the electrical connections 4C.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a yoke type magnetoresistive thin film magnetic head. In particular, the present invention relates to a yoke type magnetoresistive thin film magnetic head in which a magnetoresistive element (MR element or GMR element) is disposed in a yoke gap of a magnetic field induction yoke.

[0002]

2. Description of the Related Art Thin film magnetic heads are widely used as magnetic heads incorporated in hard disk drives (HDDs) because of their low inductance and excellent frequency characteristics. Recently, like HDDs, thin-film magnetic heads are used for reproducing data recorded on tape-based magnetic recording media for use in digital video tape recorders (VTRs) and digital storage.

In digital storage applications including HDDs, it is desired to increase the data transfer speed in addition to the increase in recording density, and thin-film magnetic heads are required to further increase reproduction output and reduce inductance. Requested.

[0004] To meet such demands, magnetoresistive effect elements are being used in HDDs. FIG. 21 is a schematic plan view of a general magnetoresistive thin film magnetic head. The magnetoresistive thin film magnetic head includes a magnetoresistive element 10 disposed on a substrate (not shown). An MR element is used as the magnetoresistive element 10. A pair of lead wires 11 is electrically connected to one end and the other end of the magnetoresistive element 10, and the lead wires 11 supply and supply a detection current (sense current) to the magnetoresistive element 10. Extract the detected current. The resistance value of the magnetoresistive element 10 changes due to the magnetic data recorded on the magnetic recording medium 12 (due to the influence of the magnetic field), and the detection current supplied through the read wiring 11 changes. This change in the detection current is taken out by the lead wiring 11, and the taken out detection signal becomes a reproduction output of the magnetoresistive thin film magnetic head. The track width T is between the pair of lead wires 11.

[0005] The magnetoresistive thin-film magnetic head shown in FIG. 21 is incorporated into the HDD while floating from the magnetic recording medium 12.
There is no contact with However, in a magnetoresistive thin film magnetic head incorporated in a VTR or the like, the magnetoresistive element and the tape-based magnetic recording medium are always in contact. For this reason, a constant current flows through the magnetoresistive effect element,
Short-circuiting, discharge, or corrosion may cause a change in the characteristics or deterioration of the characteristics of the magnetoresistive element, and may cause a change in the characteristics or deterioration of the characteristics of the magnetoresistive element due to wear.

In order to reproduce a tape-based magnetic recording medium, a magnetoresistive element is provided at a position distant from the magnetic recording medium, and a magnetic material for introducing a magnetic flux is provided between the magnetic recording medium and the magnetoresistive element. The disposed yoke type magnetoresistive thin film magnetic head is used. FIG. 23 is a schematic plan view of a general yoke type magnetoresistive thin film magnetic head, and FIG.
FIG. 2 is a sectional view of the yoke type magnetoresistive head taken along the section line F22-F22 shown in FIG. On the left side in FIG. 22 and on the upper side in FIG. 23, a tape-based magnetic recording medium runs at high speed (not shown).

The yoke type magnetoresistive thin film magnetic head includes a magnetic field induction yoke 26 and a magnetoresistive element 23 disposed on a substrate 21. Magnetic field induction yoke 23
Is a lower magnetic layer 26 disposed on the running side of the magnetic recording medium.
F, a lower magnetic layer 26R provided on the side opposite to the running side of the magnetic recording medium, and an upper magnetic layer 26U provided over both the lower magnetic layer 26F and the lower magnetic layer 26R. Prepare. A magnetic gap layer 27 is provided between the lower magnetic layer 26F and the upper magnetic layer 26U. Lower magnetic layer 26
R is directly magnetically connected to the upper magnetic layer 26U. This magnetic field induction yoke 26 forms a closed magnetic path of the signal magnetic field detected by the magnetic gap layer 27. Upper magnetic layer 2
A gap is formed between each of 6F and 26R, and this gap functions as a yoke gap (gap in yoke) 26G. The magnetoresistive element 23 is disposed below the lower magnetic layer 26F and the lower magnetic layer 26R with an insulating gap layer (not shown in detail) interposed in the yoke gap 26G. Magnetoresistance effect element 2
A lead wire 24 is electrically connected to one end and the other end of 3 respectively, and the lead wire 24 supplies a detection current and extracts a detection current. Reference numeral 24C denotes an electrical connection between the magnetoresistive element 23 and the lead wiring 24.

In the yoke type magnetoresistive thin film magnetic head, the following three points are required to improve the reproduction efficiency.

(1) The width of the magnetic field induction yoke 26 (width in the same direction as the track width T direction) is reduced.

(2) The thickness of the magnetic field induction yoke 26, that is, the thickness of the magnetic layer is increased.

(3) The yoke gap 26G is narrowed.

However, the reproduction efficiency cannot be simply improved. That is, first, when the width of the magnetic field induction yoke 26 is reduced, the length of the magnetoresistive element 23 (corresponding to the distance between the pair of lead wires 24) is reduced, and the magnetoresistive element 23 is thus reduced. The resistance value itself becomes low. For example, if the width of the magnetic field induction yoke 26 is 2
When it is set to 1/1, the amount of magnetization of the magnetoresistance effect element 23 is 1.
Although it increases five times, the resistance value of the magnetoresistive element 23 is reduced by half, so that the reproduction voltage obtained by the constant current drive is rather lowered.

Second, the reproduction efficiency can be improved by reducing the yoke gap 26G. However, there is a limit to the improvement in the processing accuracy of the photolithography technology and the etching technology, and the yoke gap 26G cannot be reduced in manufacturing. If the thickness of the magnetic field induction yoke 26, that is, the thickness of the magnetic layer is reduced, the yoke gap 26G can be reduced to some extent.
When the thickness of the magnetic layer is reduced, the magnetic resistance of the magnetic field induction yoke 26 increases, and the reproduction efficiency cannot be improved.

Third, as shown in FIG. 22, magnetic coupling is performed between the magnetoresistive element 23 and the lower magnetic layer 26F and between the magnetoresistive element 23 and the lower magnetic layer 26R. Area L overlapping each other
Is required. However, the amount of magnetization is much smaller in the overlap region L than in the central portion of the magnetoresistive element 23. That is, the magnetoresistance effect element 23
In the overlap region L, the rate at which the detected current contributes to the resistance change is small, and the reproduction efficiency is rather lowered.

Fourth, although not shown, in the overlap region L, the magnetoresistive element 23 and the lower magnetic layer 2
6F, the magnetoresistive element 23 and the lower magnetic layer 26R
An insulating gap layer for performing electrical isolation is formed between them. The insulating gap layer acts as a magnetic resistance to a signal magnetic field, causing a significant decrease in reproduction efficiency.

Although not known, a yoke type magnetoresistive thin film magnetic head capable of solving some of these technical problems has already been filed by the present applicant (Japanese Patent Application No. 10-214446). , Application date Heisei 10
July 29. ). FIG. 24 is a schematic plan view of the yoke type magnetoresistive thin film magnetic head of the present application, and FIG.
FIG. 25 is a sectional view of the yoke type magnetoresistive head taken along the section line F25-F25 shown in FIG.

As shown in FIGS. 24 and 25, the yoke type magnetoresistive thin film magnetic head has a track width T at a yoke gap 26G of the magnetic field induction yoke 26.
Elements 231 and 23 arranged in a plurality of directions
2 and a plurality of arranged magnetoresistive elements 231 and 23
2 are electrically connected in series, and the direction in which the detection current Is flows in each of the magnetoresistive elements 231 and 232 is changed to the signal magnetic field direction M flowing in the magnetic field induction yoke 26.
s that is substantially parallel to s.
The magnetic field induction yoke 26 includes a lower magnetic layer 26D and an upper magnetic layer 26UF disposed on the lower magnetic layer 26D on the running side of the magnetic recording medium with a magnetic gap layer 27 interposed therebetween.
On the side opposite to the running side of the magnetic recording medium, the lower magnetic layer 2
And a top magnetic layer 26UR directly disposed on the 6D. A yoke gap 26G is provided between the upper magnetic layer 26UF and the upper magnetic layer 26UR. As shown in FIG. 25, each of the magnetoresistive elements 231 and 232 is disposed on both the upper magnetic layer 26UF and the upper magnetic layer 26UR. Between the magnetoresistive element 23 and the upper magnetic layer 26UF, between the magnetoresistive element 23 and the upper magnetic layer 2
An insulating gap layer is provided between the gap layer and 6 UR.

In the thus configured yoke type magnetoresistive thin film magnetic head, the direction in which the detection current Is flows through the magnetoresistive element 23 and the magnetic field inducing yoke 26
Since the direction in which the signal magnetic field Ms flows is almost parallel to
A decrease in the amount of magnetization in the overlap region L between the magnetic field induction yoke 26 and the magnetoresistive effect element 23 at the yoke gap 26G can be prevented, and the reproduction output can be improved. Further, in the yoke type magnetoresistive thin film magnetic head, a plurality of magnetoresistive elements 231 and 23 are provided.
2 are arranged in the track width T direction, and the plurality of magnetoresistive elements 231 and 232 are electrically connected in series. The reproduction voltage obtained by current driving is increased, and the reproduction output can be improved. Further, in the yoke type magnetoresistive thin film magnetic head,
The total resistance value of the plurality of arranged magnetoresistive elements 231 and 232 is high, the reproduction voltage value (sense voltage value) can be set high, and the width of the magnetic field induction yoke 26 in the track width T direction is narrowed to reduce the magnetoresistance effect. Since the amount of magnetic flux that can flow into the elements 231 and 232 can be increased, the reproduction output can be improved.

[0019]

In the yoke type magnetoresistive thin film magnetic head shown in FIGS. 24 and 25, no consideration was given to the following points.

(1) In the yoke type magnetoresistive thin film magnetic head, the upper magnetic layers 26UF and 26UR
Is formed thereon, an insulating film 28 is formed thereon, and the surface of the insulating film 28 is flattened until the respective surfaces of the upper magnetic layers 26UF and 26UR are exposed (the height of the flattened surface of the insulating film 28). Is indicated by a broken line in FIG. 25). Thereafter, an insulating gap layer is formed on the flattened surface, and subsequently, a magnetoresistive element 23 is formed. The planarization is performed by chemical mechanical polishing by a chemical mechanical polishing (CMP) method, and the upper magnetic layers 26UF and 26UR and the insulating film 28 are simultaneously polished.

However, the upper magnetic layers 26UF, 26UR
In general, metal materials such as FeNi, CoZrNb, and FeAlSi are used for each of the materials, and inorganic oxide materials such as SiO ₂ and Al ₂ O ₃ or organic materials such as a photoresist are used for the insulating film. If the upper magnetic layers 26UF and 26UR and the insulating film 28 are simultaneously polished, a step is generated at the boundary between the two. This step reaches 50 nm to 80 nm.

Further, when a giant magnetoresistive element (GMR element) is used as the magnetoresistive element 23, the crystal orientation of each layer of the GMR element is affected. Although it is preferable to finish within a range of 1 nm to 2 nm, it is extremely difficult to find a process condition for minimizing a step with the surface roughness of the polished surface.

For this reason, the yoke type magnetoresistive thin film magnetic head has a problem that Barkhausen noise is generated due to a step or surface roughness of the polished surface, and a reproduction output is reduced.

(2) In order to solve the above-mentioned problem caused by the flattening polishing, the underlayer of the magnetoresistance effect element 23 is flat, and the magnetoresistance effect element 23 is formed before the flattening polishing process. Therefore, it is preferable to dispose the magnetoresistive element 23 on the surface of the substrate 1 and below the magnetic field induction yoke 26.

FIG. 26 is a cross-sectional view of a yoke type magnetoresistive thin film magnetic head.
It is sectional drawing cut | disconnected by the 6-F26 cutting-line part. FIG. 27 is a sectional view of a yoke type magnetoresistive thin film magnetic head in which the magnetoresistive element 23 is enlarged. As shown in FIGS. 26 and 27, the magnetic field induction yoke 26 has a lower magnetic layer 26F disposed on the traveling side of the magnetic recording medium and a lower magnetic layer 26F disposed on the side opposite to the traveling side of the magnetic recording medium. Layer 26
R and the lower magnetic layer 26F, a magnetic gap layer 27
The lower magnetic layer 26R includes an upper magnetic layer 26U that is magnetically directly connected to the lower magnetic layer 26R and that is disposed across the lower magnetic layer 26F and the lower magnetic layer 26R. A yoke gap 26G is provided between the lower magnetic layer 26F and the lower magnetic layer 26R. Each of the magnetoresistive elements 231 and 232 is disposed under both the lower magnetic layer 26F and the lower magnetic layer 26R. Magnetoresistive element 23 and lower magnetic layer 2
6F, the magnetoresistive element 23 and the lower magnetic layer 26R
And an insulating gap layer is provided between them.

However, in such a yoke type magnetoresistive thin film magnetic head, as shown in FIG. 27, a connection wiring 241 is provided between the lower magnetic layer 26F and the magnetoresistive element 23 in addition to the insulating gap layer. Is provided, and similarly, the lead wire 24 is provided between the lower magnetic layer 26R and the magnetoresistive effect element 23 in addition to the insulating gap layer, so that the magnetoresistive effect element 23 and the magnetic field induction yoke 26
And the distance t between them increases.

FIG. 28 shows the relationship between the distance (μm) between the magnetoresistive element and the magnetic field induction yoke and the reproduction efficiency (dB).
It is a figure showing the result of having calculated by the dimensional finite element method. FIG.
As shown in the figure, when an insulating gap layer (insulating film) having a thickness of 0.1 μm is provided between the magnetoresistive element 23 and the magnetic field inducing yoke 26, In the case where a total space of 0.2 μm of a 0.1 μm-thick insulating gap layer (insulating film) and a 0.1 μm-thick non-magnetic metal layer (lead wiring 24 or connection wiring 241) is provided between them. When compared with the above, there is a problem that the reproduction efficiency is reduced by 2 dB and the reproduction output is reduced.

(3) If the thickness of the lead wiring 24 or the connecting wiring 241 disposed between the magnetoresistive element 23 and the magnetic field inducing yoke 26 of the above problem (2) is reduced, the thickness of FIG.
As shown in FIG. 8, a decrease in regeneration efficiency can be suppressed. However, reducing the thickness of the lead wiring or the connection wiring 241 causes a problem that the resistance change rate of the magnetoresistive element 23 is reduced.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to reduce Barkhausen noise, improve reproduction output, and further improve the magnetoresistance effect element. An object of the present invention is to provide a yoke-type magnetoresistive thin-film magnetic head capable of improving the rate of change in resistance and realizing high recording density.

It is a further object of the present invention to provide a yoke type magnetoresistive thin film magnetic head which can achieve a simple structure while achieving the above objects.

[0031]

SUMMARY OF THE INVENTION In order to solve the above problems, a first feature of the present invention is to provide a yoke type magnetoresistive thin film magnetic head having a magnetic field induction yoke having a yoke gap and a magnetic field induction yoke. A plurality of magnetoresistive elements arranged in the track width direction in the yoke gap portion and each of the plurality of arranged magnetoresistive elements are electrically connected in series, and the direction in which the detection current flows in each magnetoresistive element is determined. A connection line that is substantially parallel to the direction of the signal magnetic field flowing through the magnetic field induction yoke, wherein a plurality of magnetoresistive elements are disposed below the yoke gap of the magnetic field induction yoke, and the connection line is connected to the magnetoresistive element. Alternatively, a magnetic connection between the magnetoresistive effect element and the magnetic field induction yoke is provided on the yoke gap side of the electric connection with the lead wiring, and the magnetic resistance is provided. The spacing dimension between the effect element and the magnetic field induction yoke than the electrical connection portion and wherein the set small in the magnetic connection.

In the yoke type magnetoresistive thin film magnetic head thus configured, the direction in which the detection current flows through the magnetoresistive element and the direction in which the signal magnetic field flows through the magnetic field induction yoke are substantially parallel. It is possible to prevent a decrease in the amount of magnetization in the overlap region between the induction yoke and the magnetoresistive element, and to improve the reproduction output. Further, in the yoke type magnetoresistive thin film magnetic head, a plurality of magnetoresistive elements are arranged in the track width direction, and the plurality of magnetoresistive elements are electrically connected in series. The total resistance value of the effect elements is high, the reproduction voltage obtained by constant current driving is high, and the reproduction output can be improved. Further, in the yoke type magnetoresistive thin film magnetic head,
Since the total resistance value of the magnetoresistive element is high, the reproducing voltage can be set high, and the width of the magnetic field induction yoke in the track width direction can be narrowed to increase the amount of magnetic flux flowing into the magnetoresistive element. Output can be improved. Therefore, a high recording density of the yoke type magnetoresistive thin film magnetic head can be realized.

In addition to these effects, in the yoke type magnetoresistive thin film magnetic head, a plurality of magnetoresistive elements are disposed below the yoke gap of the magnetic field inducing yoke, so that the magnetic field inducing yoke in the manufacturing process. In addition, since the magnetoresistive element is formed before the polishing treatment for planarizing the insulating film buried therearound, it is possible to eliminate the generation of Barkhausen noise due to the step at the boundary between the magnetic field induction yoke and the insulating film. it can.

Further, in the yoke type magnetoresistive thin film magnetic head, the magnetic connection between the magnetoresistive element and the magnetic field inducing yoke is closer to the yoke gap than the electrical connection between the magnetoresistive element and the connection wiring or the lead wiring. The distance between the magnetoresistive effect element and the magnetic field induction yoke is set smaller at the magnetic connection part than at the electrical connection part, so that the magnetoresistance between the magnetoresistive effect element and the magnetic field induction yoke is reduced. Can be reduced and the reproduction efficiency can be improved, so that the reproduction output can be improved.

Further, in the yoke type magnetoresistive thin film magnetic head, the magnetoresistive element and the magnetic field inducing yoke are provided on the yoke gap side in a region different from the electrical connection between the magnetoresistive element and the connection wiring or the lead wiring. And the distance between the magnetoresistive element and the magnetic field inducing yoke can be set independently and smaller in the magnetic connection part than in the electric connection part, so that the connection wiring or the lead By sufficiently securing the thickness of the wiring, the detection current capacity can be increased, and the resistance change rate of the magnetoresistive element can be improved.

According to a second feature of the present invention, in the above-described yoke type magnetoresistive thin film magnetic head, a part of the plurality of magnetoresistive elements are directly connected to the magnetic field induction yoke, and the direct connection portion is electrically connected. And a magnetic connection portion, and the magnetic field induction yoke also serves as a connection line for electrically connecting the adjacent magnetoresistive elements in series.

In the thus configured yoke type magnetoresistive thin film magnetic head, the magnetic resistance between a part of the magnetoresistive element and the magnetic field induction yoke can be reduced by direct connection, and the closed magnetic circuit can be reduced. Since the overall magnetic resistance can be reduced, the amount of magnetic flux flowing into the magnetoresistive element can be increased, and the reproduction output can be improved. Further, in the yoke-type magnetoresistive thin-film magnetic head, the magnetic field induction yoke also serves as the connection wiring for electrically connecting the magnetoresistive elements in series, thereby eliminating the need for a configuration equivalent to the connection wiring. The structure can be easily realized.

[0038]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings. FIG.
FIG. 2 is a plan view of a yoke-type magnetoresistive thin-film magnetic head according to a first embodiment of the present invention. FIG. 2 is a yoke-type magnetoresistive thin-film magnetic cut along a line F2-F2 shown in FIG. FIG. 1 is an enlarged cross-sectional view of a main part of the yoke type magnetoresistive thin film magnetic head shown in FIG.

As shown in FIGS. 2 and 3, the yoke type magnetoresistive thin film magnetic head has a yoke gap 6G.
, A plurality of magnetoresistive elements 31 and 32 arranged in the track width T direction in a yoke gap 6G portion of the magnetic induction yoke 6, and a plurality of arranged magnetoresistive elements 31 and 32. Electrically connected in series, the respective magnetoresistive elements 31, 32
In the magnetic field induction yoke 2
And a connection wiring 41 which is substantially parallel to the signal magnetic field direction Ms flowing through the connection line 41. The plurality of magnetoresistive elements 31 and 32 connected in series are constructed as one magnetoresistive element 3. The magnetic field induction yoke 6, the magnetoresistive element 3, and the connection wiring 41 are all disposed on the surface of the substrate 1.

Further, as shown in FIG. 1, the yoke type magnetoresistive thin film magnetic head has a plurality of magnetoresistive elements 3 under the yoke gap 6G of the magnetic field induction yoke 6.
1 and 32 are disposed, and the magnetoresistive element 3 is located closer to the yoke gap 6G than the electric connection portion 4C between each of the magnetoresistive elements 31 and 32 and the connection wiring 41 or the lead wiring 4.
A magnetic connection portion 4M between each of the magnetic field induction yokes 6 and 1 and 32 is provided, and a separation dimension t2 of the magnetic connection portion 4M between each of the magnetoresistive elements 31 and 32 and the magnetic field induction yoke 6 is electrically connected. It is set smaller than the separation dimension t1 of the portion 4C.

As shown in FIGS. 1 to 3, the magnetic field induction yoke 6 includes a lower magnetic layer (front lower magnetic layer) 6F, a lower magnetic layer (rear lower magnetic layer) 6R, an upper magnetic layer 6U, and a yoke gap. Built with 6G. The lower magnetic layer 6F is disposed on the magnetic recording medium (not shown) on the substrate 1 (left side in FIGS. 1 and 2 and upper side in FIG. 3). Similarly, the lower magnetic layer 6R is provided on the substrate 1 on the side opposite to the magnetic recording medium side (the right side in FIGS. 1 and 2 and the lower side in FIG. 3). The upper magnetic layer 6U is directly connected on the lower magnetic layer 6R with the magnetic gap layer 7 interposed on the lower magnetic layer 6F, and is disposed from the lower magnetic layer 6F to the lower magnetic layer 6R. The magnetic gap layer 7 detects magnetic information recorded on a magnetic recording medium. Lower magnetic layer 6F and lower magnetic layer 6R
A gap (gap) between them functions as a yoke gap 6G. In the present embodiment, the magnetoresistive element 3, that is, a plurality of magnetoresistive elements 31 and 32 are arranged below the yoke gap 6G, as shown in FIG. The yoke gap 6G allows the signal magnetic field detected by the magnetic gap layer 7 to flow into the respective magneto-resistance effect elements 31 and 32 of the magneto-resistance effect element 3. The magnetic field induction yoke 6 applies the signal magnetic field detected by the magnetic gap layer 7 to the magnetoresistive element 3.
A closed magnetic path to flow into The direction indicated by the arrow with the symbol Ms shown in FIGS. 2 and 3 indicates the direction in which the signal magnetic field flows in the closed magnetic circuit.

As shown in FIGS. 1 and 2, the magnetoresistive element 3 is disposed on a flat surface of the substrate 1 with an underlayer 2 having a uniform thickness interposed therebetween. The magnetoresistive element 3 is disposed below the magnetic field induction yoke 6 as described above.
As will be described later in the manufacturing process, after the magnetoresistive effect element 3 is formed, each of the magnetic field induction yoke 6, specifically, the insulating film (8) covering at least the lower magnetic layers 6F and 6R and the lower magnetic layers 6F and 6R is formed. The lower magnetic layers 6F and 6R are sequentially formed and the surface of the insulating film (8) is flattened and polished until the respective surfaces of the lower magnetic layers 6F and 6R are exposed. Barkhausen noise is not generated even if a step is formed in the portion.

The magnetoresistance effect element 3 of the magnetoresistance effect element 3
Each of the first and the second ends 32 is disposed so as to overlap (overlap) one side below the lower magnetic layer 6F of the magnetic field induction yoke 6 and the other end side is disposed below the lower magnetic layer 6R. One end of each of the magnetoresistive elements 31 and 32 is
1 are electrically connected in series. An electric connection portion 4C is provided between one end of the magnetoresistive element 31 and the connection wiring 41.
Similarly, one end of the magnetoresistive element 32 and the connecting wire 4
1 are connected to each other at an electric connection portion 4C. A lead wire 4 is electrically connected to the other end of each of the magnetoresistive elements 31 and 32. The other end of the magnetoresistive element 31 and the lead wire 4 are electrically connected to each other at the electrical connection portion 4C, and similarly, the other end of the magnetoresistive element 32 and the lead wire 4 are electrically connected to each other at the electrical connection portion 4C. You. Magnetoresistive element 31
The lead wire 4 connected to the other end of the sensor supplies a detection current Is to the magnetoresistive element 3. The lead wire 4 connected to the other end of the magnetoresistive element 32 is
The extraction of the detection current Is supplied to is performed. In the electric connection portion 4C, each of the magnetoresistive elements 31 and 32 is separated from the lower magnetic layer 6F or the lower magnetic layer 6R of the magnetic field induction yoke 6 via the connection wiring 41 and the insulating gap layer 5.

At one end of each of the magnetoresistive elements 31, 32, the yoke gap 6G is closer to the yoke gap 6G than the electrical connection 4C, in other words, the electrical connection 4C and the yoke gap 6
A magnetic connection portion 4M for magnetically connecting between one end side of each of the magnetoresistive elements 31 and 32 and the lower magnetic layer 6F is provided between the magnetic connection portions G and G. In the magnetic connection portion 4M, between one end of each of the magnetoresistive elements 31 and 32 and the lower magnetic layer 6F, the insulating gap layer 5 of the electric connection portion 4C is provided.
An insulating gap layer 5 having substantially the same thickness as that of the insulating gap layer 5 is provided. Similarly, on the other end side of each of the magnetoresistive elements 31 and 32, the other end side of each of the magnetoresistive elements 31 and 32 and the lower magnetic layer 6R are closer to the yoke gap 6G than the electric connection portion 4C. A magnetic connection portion 4M for magnetically connecting the components is provided. An insulating gap having substantially the same thickness as the insulating gap layer 5 of the electrical connection 4C is provided between the other end of each of the magnetoresistive elements 31 and 32 and the lower magnetic layer 6R in the magnetic connection 4M. Layer 5 is provided.

That is, in the yoke type magnetoresistive thin film magnetic head according to the present embodiment, as shown in FIG. In comparison with the distance t1 between the magnetoresistive element 3 (the magnetoresistive elements 31 and 32) and the magnetic field induction yoke 6 (the lower magnetic layers 6F and 6R),
The separation dimension t2 between the magnetoresistive effect element 3 and the magnetic field induction yoke 6 at the magnetic connection part 4M is set to be small. Specifically, the separation dimension t2 is larger than the connection dimension t1 in the connection wiring 4.
1 or the thickness of the lead wiring 4.
As a result, the magnetic resistance between the magnetoresistance effect element 3 and the magnetic field induction yoke 6 can be reduced, and the reproduction efficiency can be improved, so that the reproduction output can be improved. In addition, since each of the electric connection portion 4C and the magnetic connection portion 4M is set in a separate area, the separation size t2 at the magnetic connection portion 4M is small, and the separation size t1 at the electric connection portion 4C is set large. Can be. That is, the increase in the separation dimension t1 in the electric connection portion 4C is caused by the connection wiring 4
1 or the thickness of the lead wire 4 can be realized, and the increase in the thickness of the connection wire 41 or the lead wire 4 can increase the detection current capacity. Can be improved.

In this embodiment, each of the magnetoresistive elements 31 and 32 has a free layer (first magnetic layer), an intermediate layer (nonmagnetic metal layer), a fixed layer (second magnetic layer), an antiferromagnetic layer. It is constructed of a spin-valve giant magnetoresistance effect element (SV-GMR element) in which each layer is sequentially laminated on the surface of the substrate 1. The free layer is formed of, for example, an FeCo film having a thickness of 10 nm. The intermediate layer is formed of, for example, a Cu film having a thickness of 2 nm. The fixed layer is formed of, for example, a Co film having a thickness of 2 nm. The antiferromagnetic layer is formed of, for example, an FeMn film having a thickness of 10 nm.

The connection wiring 41 and the lead wiring 4 formed on the surfaces of the magnetoresistive elements 31 and 32, respectively.
In the present embodiment, is formed of the same conductive layer and the same conductive material (in the same manufacturing step as the manufacturing process). The connection wiring 41 and the lead wiring 4 are formed of, for example, a Ta film having a thickness of 100 nm. The connection wiring 41
Is a plurality of magnetoresistive elements 3 arranged as described above.
1 and 32 are electrically connected in series, and the direction in which the detection current Is flows in each of the magnetoresistive elements 31 and 32 is changed to the signal magnetic field direction M flowing in the magnetic field induction yoke 6.
be substantially parallel to s.

As shown in FIG. 2, an insulating film 81 is buried around the upper magnetic layer 6U of the magnetic field induction yoke 6, and a protective film 9 is formed on the magnetic field induction yoke 6 and the insulating film 81. It is formed.

Next, a method of manufacturing the above-described yoke type magnetoresistive thin film magnetic head will be described. 4 to 10
FIG. 4 is a process sectional view of a yoke type magnetoresistive thin film magnetic head for explaining a manufacturing method for each process.

(1) First, a substrate 1 is prepared, and an underlayer 2 is formed on the substrate 1 as shown in FIG. Substrate 1 has Al
Ceramic substrates such as ₂ O ₃ -TiC substrate and CaTiO substrate can be used practically. For the underlayer 2, for example, an Al ₂ O ₃ film having a thickness of 3 μm is used. The surface of the Al ₂ O ₃ film is subjected to a mirror-polishing treatment so that the surface roughness Ra becomes about 2 nm, for example.

(2) As shown in FIG. 5, the magnetoresistance effect elements 3 (31 and 32) are formed on the underlayer 2. Although not shown in detail, the magnetoresistance effect element 3 is formed by sequentially laminating respective layers of a free layer, an intermediate layer, a fixed layer, and an antiferromagnetic layer. Each layer constituting these magnetoresistive elements 3 is formed by, for example, a multi-layer sputtering method. Each of the formed layers is patterned by an ion milling method using a mask formed by a photolithography technique to form a plurality of magnetoresistive elements 31 and 32.

(3) As shown in FIG. 6, a connecting wire 41 is formed on one end of the surface of the magnetoresistive element 3,
The lead wiring 4 is formed on the other end side. In the present embodiment, each of the connection wiring 41 and the lead wiring 4 is formed of the same conductive material in the same manufacturing process. Each of the connection wiring 41 and the lead wiring 4 is formed by, for example, a lift-off method. The connection between the one end of the magnetoresistive element 3 and the connection wiring 41 and the connection between the other end of the magnetoresistive element 3 and the lead wiring 4 constitute an electric connection 4C.

(4) As shown in FIG. 7, the insulating gap layer 5 is formed on the entire surface of the substrate 1 including the magnetoresistive effect element 3, the connection wiring 41 and the lead wiring 4. For example, an Al ₂ O ₃ film having a thickness of 100 nm is used for the insulating gap layer 5.
This Al ₂ O ₃ film is formed by, for example, a sputtering method.

(5) As shown in FIG. 8, on the insulating gap layer 5, a lower magnetic layer 6F is formed on the magnetic recording medium side, and a lower magnetic layer 6R is formed on the side opposite to the magnetic recording medium side. The lower magnetic layers 6F and 6R are formed in the same manufacturing process, and are formed of a soft magnetic film such as a NiFe film or a CoZrNb film having a thickness of 3 μm, for example. The lower magnetic layers 6F and 6R are formed by, for example, a lift-off method. In the lift-off method, a mask is formed on a non-pattern area by photolithography, a soft magnetic film is formed on the pattern area and the mask by a sputtering method, and unnecessary soft magnetic films on the mask and the mask are selectively removed. Then, a soft magnetic film is formed only in the pattern region. The lower magnetic layer 6F
And 6R may be formed by a commonly used patterning method. In this patterning method, a soft magnetic film is formed in a pattern region and a non-pattern region by a sputtering method, a mask is formed in a pattern region on the soft magnetic film by a photolithography technique, and the soft magnetic film is formed using the mask. Is a method of removing the non-pattern region by the ion milling method.

The gap between the lower magnetic layer 6F and the lower magnetic layer 6R becomes a yoke gap 6G. An end of the lower magnetic layer 6F on the yoke gap 6G side protrudes from an electric connection portion 4C between one end of the magnetoresistive element 3 and the connection wiring 41, and this region is formed by the lower magnetic layer 6F and the magnetoresistive element. 3
4M. Similarly, the end of the lower magnetic layer 6R on the yoke gap 6G side protrudes beyond the electrical connection 4C between the other end of the magnetoresistive element 3 and the lead wiring 4, and this region is connected to the lower magnetic layer 6R. It becomes a magnetic connection part 4M with the magnetoresistive effect element 3.

(6) As shown in FIG. 9, the lower magnetic layer 6F
And an insulating film 8 covering the lower magnetic layers 6F and 6R.
Until the respective surfaces of R are exposed, the surface of the insulating film 8 is subjected to planarization polishing. The insulating film 8 is formed, for example, of the lower magnetic layer 6.
SiO ₂ having a thickness of 3 μm formed by a plasma CVD method so that the region around F and 6R is almost completely buried.
Use a membrane. The CMP method is used for the planarization polishing.

Here, since the flattening and polishing treatment by the CMP method is performed after the formation of the magnetoresistive effect element 3, a step is generated at the boundary between each of the lower magnetic layers 6 F and 6 R and the insulating film 8. However, this step does not become a factor for increasing Barkhausen noise.

(7) As shown in FIG. 10, the magnetic gap layer 7 is formed at least on the lower magnetic layer 6F. The magnetic gap layer 7 is formed of, for example, an SiO ₂ film having a thickness of 100 nm formed by a plasma CVD method. The magnetic gap layer 7 on the lower magnetic layer 6R, which serves as a magnetic connection between the lower magnetic layer 6R and the upper magnetic layer 6U formed thereafter, is, for example, RIE.
To be removed.

(8) Thereafter, the upper magnetic layer 6U is formed on the magnetic gap layer 7 (on the lower magnetic layer 6F) and on the lower magnetic layer 6R so as to straddle the lower magnetic layer 6F and the lower magnetic layer 6R (described above). (See FIG. 2). The upper magnetic layer 6U is formed of a soft magnetic film such as a NiFe film or a CoZrNb film having a thickness of 3 μm, for example, similarly to the lower magnetic layers 6F and 6R, and is formed by a lift-off method or a general patterning method. Is done. Then, the above-described insulating film 8 is formed around the upper magnetic layer 6U.
The insulating film 81 is buried in the same manner as
U and the respective surfaces of the insulating film 81 are subjected to flattening polishing.

(9) Finally, as shown in FIG.
By forming the protective film 9 covering the upper magnetic layer 6U, the yoke type magnetoresistive thin film magnetic head according to the present embodiment is completed.

In the yoke type magnetoresistive thin film magnetic head thus configured, the direction in which the detection current Is of the magnetoresistance effect element 3 flows and the direction Ms in which the signal magnetic field of the magnetic field induction yoke 6 flows are substantially parallel. As a result, it is possible to prevent a decrease in the amount of magnetization in the overlap region between the magnetic field induction yoke 6 and the magnetoresistive effect element 3, and to improve the reproduction output.

Further, in the yoke type magnetoresistive thin film magnetic head, a plurality of magnetoresistive elements 31,
32 are arranged in the direction of the track width T, and the plurality of magnetoresistive elements 31, 32 are electrically connected in series by the connection wiring 41, so that the total resistance value of the plurality of magnetoresistive elements 31, 32 is Therefore, the reproduction voltage obtained by the constant current driving increases, and the reproduction output can be improved.

Further, in the yoke type magnetoresistive thin film magnetic head, the total resistance of the magnetoresistive elements 31 and 32 is high, the reproducing voltage can be set high, and the width of the magnetic field induction yoke 6 in the track width T direction. Can be reduced to increase the amount of magnetic flux flowing into the magnetoresistive elements 31 and 32, so that the reproduction output can be improved. Accordingly, a higher recording density of the yoke type magnetoresistive thin film magnetic head can be realized with an increase in the reproduction output.

In addition to these effects, the yoke type magnetoresistive thin film magnetic head is manufactured by disposing a plurality of magnetoresistive elements 31, 32 below the yoke gap 6G of the magnetic field induction yoke 6. In the process, before the flattening polishing process of the magnetic field induction yoke 6 and the insulating film 8 or 81 buried therearound, the magnetoresistive element 3
Since the first and second layers are formed, generation of Barkhausen noise due to a step at the boundary between the magnetic field induction yoke 6 and the insulating film 8 or 81 can be eliminated.

Further, in the yoke type magnetoresistive thin film magnetic head, the magnetoresistive element 3 and the magnetic field are located closer to the yoke gap 6G than the electrical connection 4C between the magnetoresistive element 3 and the connection wiring 41 or the lead wiring 4. A magnetic connection portion 4M with the induction yoke 6 is provided, and a separation dimension t of the magnetic connection portion 4M between the magnetoresistive element 3 and the magnetic field induction yoke 6 is provided.
2 is smaller than the separation dimension t1 of the electrical connection 4C, the magnetoresistive element 3 and the magnetic field inducing yoke 6
Can be reduced, and the reproduction efficiency can be improved, so that the reproduction output can be improved.

Further, in the yoke type magnetoresistive thin film magnetic head, the magnetoresistive effect is applied to the yoke gap 6G side in a region different from the electric connection portion 4C between the magnetoresistive effect element 3 and the connection wiring 41 or the lead wiring 4. A magnetic connection 4M between the element 3 and the magnetic field induction yoke 6 is provided, and a separation dimension t2 of the magnetic connection 4M between the magnetoresistive element 3 and the magnetic field induction yoke 6 is changed to a separation dimension t1 of the electric connection 4C. The connection wiring 41 can be set independently small.
Alternatively, the thickness of the lead wire 4 can be made sufficiently large to increase the detection current capacity, and the rate of change in resistance of the magnetoresistive element 3 can be improved.

In the yoke type magnetoresistive thin film magnetic head according to the present embodiment, two magnetoresistive elements 31 and 32 are connected in series in the track width T direction at the yoke gap 6G of the magnetic field induction yoke 6. However, in the present invention, three or more magnetoresistive elements may be arranged in the track width direction and the respective magnetoresistive elements may be connected in series.

Further, according to the present invention, an MR element can be used as the magnetoresistive element 3 of the yoke type magnetoresistive thin film magnetic head. The MR element has, for example, a laminated structure in which a bias layer, an intermediate layer, an MR layer, and an antiferromagnetic layer are sequentially laminated. The bias layer is formed of, for example, a CoZrMo film having a thickness of 15 nm. The intermediate layer is formed of, for example, a Ta film having a thickness of 20 nm. The MR layer is formed of, for example, a NiFe film having a thickness of 20 nm. The antiferromagnetic layer is formed of, for example, an FeMn film having a thickness of 10 nm.

(Second Embodiment) In the present embodiment, the magnetic resistance between the magnetoresistive element and the magnetic field inducing yoke is further reduced in the yoke type magnetoresistive thin film magnetic head. FIG. 13 is a plan view of a yoke-type magnetoresistive thin-film magnetic head according to a second embodiment of the present invention, and FIG. 12 is a diagram illustrating F12-F12 shown in FIG.
FIG. 11 is a cross-sectional configuration diagram of a yoke-type magnetoresistive thin-film magnetic head cut along a cutting line. FIG. 11 is an enlarged cross-sectional configuration diagram of a main part of the yoke-type magnetoresistive thin-film magnetic head shown in FIG.

As shown in FIGS. 11 to 13, in the yoke type magnetoresistive thin film magnetic head according to the present embodiment, a part of the plurality of magnetoresistive elements 31 and 32 are directly connected to the magnetic field induction yoke 6. The direct connection portion also serves as the electric connection portion 4C and the magnetic connection portion 4M, and the magnetic field induction yoke 6 electrically connects the adjacently arranged magnetoresistive elements 31 and 32 in series. The present invention is characterized in that the connecting wiring for connection is also used. More specifically, a connection hole (reference numeral 5C in FIGS. 17 and 18) formed between the one end side of each of the magnetoresistive elements 31 and 32 and the lower magnetic layer 6F of the magnetic field induction yoke 6 is formed in the insulating gap layer 5. Are directly connected.)

On the other hand, similarly to the yoke type magnetoresistive thin film magnetic head according to the first embodiment, the other ends of the magnetoresistive elements 31 and 32 and the lower magnetic layer of the magnetic field induction yoke 6 are formed. The magnetic connection 4M to the magnetic connection 6R is disposed closer to the yoke gap 6G than the electric connection 4C between the lower magnetic layer 6R and the lead wiring 4, and the separation t2 of the magnetic connection 4M is set to the separation t1 of the electric connection 4C. It is set smaller than.

Next, a method of manufacturing the above-described yoke type magnetoresistive thin film magnetic head will be described. 14 to 2
0 is a process sectional view of a yoke type magnetoresistive thin film magnetic head for explaining a manufacturing method for each process.

(1) First, the substrate 1 is prepared, and the underlayer 2 is formed on the substrate 1 as shown in FIG. On board 1
Ceramic substrates such as Al ₂ O ₃ -TiC substrate and CaTiO substrate can be used practically. For the underlayer 2, for example, an Al ₂ O ₃ film having a thickness of 3 μm is used. The surface of the Al ₂ O ₃ film is subjected to a mirror-polishing treatment so that the surface roughness Ra becomes about 2 nm, for example.

(2) As shown in FIG. 15, the magnetoresistive elements 3 (31 and 32) are formed on the underlayer 2. Although not shown in detail, the magnetoresistance effect element 3 is formed by sequentially laminating respective layers of a free layer, an intermediate layer, a fixed layer, and an antiferromagnetic layer. In the present embodiment, the free layer of the magnetoresistive element (SV-GMR element) 3 is formed of, for example, an FeNi film having a thickness of 10 nm. The intermediate layer is formed of, for example, a Cu film having a thickness of 2 nm. The fixed layer is formed of, for example, a Co film having a thickness of 2 nm. The antiferromagnetic layer is, for example, 10
It is formed of an IrMn film having a thickness of nm. Each layer constituting these magnetoresistive elements 3 is formed by, for example, a multi-layer sputtering method. Each of the formed layers is patterned by an ion milling method using a mask formed by a photolithography technique to form a plurality of magnetoresistive elements 31 and 32.

(3) As shown in FIG. 16, a lead wire 4 is formed on the other end of the surface of the magnetoresistive element 3. In this embodiment, the lead wiring 4 is formed of a Mo film having a thickness of 100 nm in this embodiment, and is formed by a lift-off method. The connection between the other end of the magnetoresistive element 3 and the lead wire 4 is an electrical connection 4C.

(4) As shown in FIG. 17, an insulating gap layer 5 is formed on the entire surface of the substrate 1 including the magnetoresistive element 3 and the lead wires 4, and thereafter, a magnetic field is formed on one end of the magnetoresistive element 3. Connection hole 5 for electrically and magnetically directly connecting between resistance effect element 3 and magnetic field induction yoke 6
Form C. As the insulating gap layer 5, an SiO ₂ film having a thickness of, for example, 100 nm is used, and this SiO ₂ film is formed by, for example, a sputtering method. The connection hole 5C provided in the insulating gap layer 5 is formed by, for example, RIE.

(5) As shown in FIG. 18, a lower magnetic layer 6F is formed on the insulating gap layer 5 on the side of the magnetic recording medium, and a lower magnetic layer 6R is formed on the side opposite to the magnetic recording medium. The lower magnetic layers 6F and 6R are formed by the same manufacturing process, and are formed of, for example, a soft magnetic film of a NiFe film having a thickness of 3 μm. In the present embodiment, the NiFe film is used in combination with a masking technique for forming a mask in a non-pattern region,
A film is formed on the pattern area by an electroless plating method.

The gap between the lower magnetic layer 6F and the lower magnetic layer 6R becomes the yoke gap 6G. Magnetoresistance effect element 3
Is electrically and magnetically directly connected to the lower magnetic layer 6F through a connection hole 5C provided in the insulating gap layer 5, and this region also serves as an electric connection portion 4C and a magnetic connection portion 4M. The end of the lower magnetic layer 6R on the yoke gap 6G side protrudes beyond the electrical connection 4C between the other end of the magnetoresistive effect element 3 and the lead wiring 4, and this region is in contact with the lower magnetic layer 6R and the magnetoresistive effect. It becomes a magnetic connection 4M with the element 3.

(6) As shown in FIG. 19, the lower magnetic layer 6
The insulating film 8 covering the F and 6R is formed, and the surface of the insulating film 8 is subjected to flattening polishing until the respective surfaces of the lower magnetic layers 6F and 6R are exposed. The insulating film 8 is, for example, a 3 μm-thick SiO ₂ film formed by a plasma CVD method so that the regions around the lower magnetic layers 6F and 6R are almost completely buried. The CMP method is used for polishing.

Here, since the flattening and polishing treatment by the CMP method is performed after the formation of the magnetoresistive element 3, a step is formed at the boundary between each of the lower magnetic layers 6 F and 6 R and the insulating film 8. However, this step does not become a factor for generating Barkhausen noise.

(7) As shown in FIG. 20, the magnetic gap layer 7 is formed at least on the lower magnetic layer 6F. The magnetic gap layer 7 is formed of, for example, an SiO ₂ film having a thickness of 100 nm formed by a sputtering method. The magnetic gap layer 7 on the lower magnetic layer 6R serving as a magnetic connection between the lower magnetic layer 6R and the upper magnetic layer 6U formed thereafter is removed by, for example, RIE.

(8) Thereafter, the upper magnetic layer 6U is formed over the lower magnetic layer 6F and the lower magnetic layer 6R on the magnetic gap layer 7 and the lower magnetic layer 6R (see FIG. 12 described above).
reference). The upper magnetic layer 6U is made of, for example, a NiFe film having a thickness of 3 μm, CoZ
It is formed of a soft magnetic film such as an rNb film, for example, by a general patterning method. Then, the upper magnetic layer 6U
Is formed and the surface of the insulating film 81 is polished for planarization until the surface of the upper magnetic layer 6U is exposed.

(9) Finally, as shown in FIG. 12 described above, the yoke type magnetoresistive thin film magnetic head according to the present embodiment is formed by forming the protective film 9 covering the upper magnetic layer 6U. Complete.

In the yoke-type magnetoresistive thin-film magnetic head thus configured, in addition to the effect obtained by the yoke-type magnetoresistive thin-film magnetic head according to the first embodiment, the magnetoresistive effect is improved. The magnetic resistance between a part of the effect element 3 and the magnetic field induction yoke 6 can be reduced by direct connection, and the magnetic resistance of the entire closed magnetic circuit can be reduced. The amount of magnetic flux can be increased, and the reproduction output can be improved. Further, in the yoke type magnetoresistive thin film magnetic head, the magnetic field inducing yoke 6 also serves as a connecting wire for electrically connecting the magnetoresistive elements 31 and 32 in series, so that the connecting wire (described above) is used. The structure corresponding to the connection wiring 41) in the first embodiment is not required, and the structure can be easily realized.

The present invention relates to a yoke-type magnetoresistive thin-film magnetic head in which a yoke gap 6G is provided in the upper magnetic layer 6U of the magnetic field induction yoke 6, and the magnetoresistive element 3 is provided below the yoke gap 6G. It may be provided. In this case, since the surface of the lower magnetic layer serving as the underlayer of the magnetoresistive element 3 is flattened over a wide range, Barkhausen noise due to the step difference in the underlayer is not generated in the magnetoresistive element 3.

Further, the present invention can be applied to a composite type thin film magnetic head having a yoke type magnetoresistive thin film magnetic head as a read only head and a recording only head.

[0087]

According to the present invention, Barkhausen noise can be reduced, and the reproduction output can be improved.
Further, it is possible to provide a yoke-type magnetoresistive thin-film magnetic head capable of improving the rate of change in resistance of the magnetoresistive element and realizing high recording density.

Further, the present invention can provide a yoke-type magnetoresistive thin-film magnetic head capable of simply realizing the structure in addition to the above effects.

[Brief description of the drawings]

FIG. 1 is an enlarged sectional configuration view of a main part of a yoke type magnetoresistive thin film magnetic head according to a first embodiment of the present invention.

FIG. 2 is a sectional configuration diagram of a yoke-type magnetoresistive thin-film magnetic head according to the first embodiment.

FIG. 3 is a plan view of a yoke-type magnetoresistive thin-film magnetic head according to the first embodiment;

FIG. 4 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the first embodiment.

FIG. 5 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the first embodiment.

FIG. 6 is a process sectional view of the yoke type magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 7 is a process sectional view of the yoke type magnetoresistive thin film magnetic head according to the first embodiment.

FIG. 8 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the first embodiment.

FIG. 9 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the first embodiment.

FIG. 10 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the first embodiment.

FIG. 11 is an enlarged sectional configuration view of a main part of a yoke type magnetoresistive thin film magnetic head according to a second embodiment of the present invention.

FIG. 12 is a cross-sectional configuration diagram of a yoke type magnetoresistive thin film magnetic head according to a second embodiment.

FIG. 13 is a plan view of a yoke-type magnetoresistive thin-film magnetic head according to a second embodiment.

FIG. 14 is a process sectional view of a yoke-type magnetoresistive thin-film magnetic head for explaining a manufacturing method according to a second embodiment for each process.

FIG. 15 is a process sectional view of the yoke type magnetoresistive thin film magnetic head according to the second embodiment.

FIG. 16 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the second embodiment.

FIG. 17 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the second embodiment.

FIG. 18 is a process sectional view of the yoke type magnetoresistive thin film magnetic head according to the second embodiment.

FIG. 19 is a process sectional view of the yoke type magnetoresistive thin film magnetic head according to the second embodiment.

FIG. 20 is a process sectional view of the yoke-type magnetoresistive thin-film magnetic head according to the second embodiment.

FIG. 21 is a schematic plan view of a magnetoresistive thin-film magnetic head according to the related art.

FIG. 22 is a sectional view of a yoke type magnetoresistive head according to the related art.

FIG. 23 is a schematic plan view of a yoke type magnetoresistive thin film magnetic head according to the related art.

FIG. 24 is a schematic plan view of a yoke-type magnetoresistive thin-film magnetic head according to the prior art of the present invention.

FIG. 25 is a sectional view of a yoke type magnetoresistive head according to the prior art of the present invention.

FIG. 26 is a sectional view of a yoke type magnetoresistive head according to the prior art of the present invention.

FIG. 27 is an enlarged sectional view of a main part of a yoke type magnetoresistive head according to the prior art of the present invention.

FIG. 28 is a magnetoresistive element according to the prior art of the present invention.
It is a figure showing the result of having computed the relation between magnetic field guidance yoke distance and reproduction efficiency by a three-dimensional finite element method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 3,31,32 Magnetoresistive element 4 Lead wiring 41 Connection wiring 4C Electric connection part 4M Magnetic connection part 5 Insulation gap layer 5C Connection hole 6 Magnetic field induction yoke 6F, 6R, 6U Magnetic layer 6G Yoke gap 7 Magnetic gap layer 8,81 insulating film 9 protective film

Claims (2)

[Claims] A magnetic field induction yoke having a yoke gap; a plurality of magnetoresistive elements arranged in a track width direction in a yoke gap portion of the magnetic field induction yoke; And a connection line that makes the direction of the detection current flow in each of the magnetoresistive elements substantially parallel to the direction of the signal magnetic field flowing in the magnetic field induction yoke. The plurality of magnetoresistive elements are disposed below a gap portion, and the magnetoresistive element and the magnetic field induction yoke are closer to the yoke gap than an electrical connection between the magnetoresistive element and the connection wiring or the lead wiring. And a distance between the magnetoresistive element and the magnetic field induction yoke is set to be larger than that of the electric connection. A yoke-type magnetoresistive thin-film magnetic head characterized in that it is set small in a portion. 2. The yoke-type magnetoresistive thin-film magnetic head according to claim 1, wherein a part of the plurality of magnetoresistive elements is directly connected to a magnetic field induction yoke, and the direct connection part is the electrical connection. Wherein the magnetic field induction yoke also serves as a connection wiring for electrically connecting adjacent magnetoresistive elements in series. The yoke type magnetoresistive thin film magnet head.