JP2000072851A - Resin paste composition and semiconductor device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the peel strength of a resin paste composition to a lead frame and an organic substrate, particularly to a copper lead frame, and to reduce the stress of the resin paste composition to reduce chip cracks and chips. Provided is a resin paste composition which suppresses warpage and has no reflow crack even when a copper lead frame and an organic substrate are used, and a semiconductor device using the same. (A) General formula (I) [Wherein, X is an n-valent organic group, and R ¹ and R ²
Are each independently hydrogen or a lower alkyl group, and n is 1, 2
Or (B) one or more liquid rubber components selected from epoxidized polybutadiene, hydrogenated epoxidized polybutadiene, and carboxyl group-terminated butadiene / acrylonitrile copolymer; (C) A resin paste composition in which a radical initiator and (D) a filler are uniformly dispersed, and a semiconductor device in which a semiconductor element is adhered to a supporting member using the resin paste composition and then sealed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin paste composition suitable for bonding a semiconductor element such as an IC or an LSI to an organic substrate such as a lead frame, glass epoxy, or a wiring board, and a semiconductor device using the same. About.

[0002]

2. Description of the Related Art The mounting method of semiconductor devices has shifted from the conventional pin insertion method to the surface mounting method in terms of high-density mounting. However, when mounting on a substrate, the entire substrate is heated by infrared rays or the like. Since reflow soldering is used and the package is heated to a high temperature of 200 ° C or higher, package cracks occur due to rapid vaporization / expansion of water inside the package, particularly, in the adhesive layer or the sealing material. However, there is a problem that the reliability of the semiconductor device is reduced. This problem is particularly acute with copper leadframes and organic substrates than 42 alloy leadframes. One of the reasons is that the adhesive strength of the adhesive to the copper lead frame is low. The other is that the copper lead frame and the organic substrate have a larger linear expansion coefficient than the 42 alloy lead frame, so the difference in the linear expansion coefficient from the Si chip becomes larger, and chip cracks and chip warpage occur. It is.

[0003]

SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art, and improves the peel strength of a resin paste composition on a lead frame and an organic substrate, particularly on a copper lead frame. By suppressing the occurrence of chip cracks and chip warpage by reducing the stress of the resin paste composition, a resin paste composition free from reflow cracks even when a copper lead frame and an organic substrate are used, and a semiconductor device using the same. To provide.

[0004]

According to the present invention, there is provided (A) a compound represented by the following general formula (I):

Embedded image [Wherein, X is an n-valent organic group, and R ¹ and R ²
Are each independently hydrogen or a lower alkyl group, and n is 1, 2
Or (B) one or more liquid rubber components selected from epoxidized polybutadiene, hydrogenated epoxidized polybutadiene, and carboxyl group-terminated butadiene / acrylonitrile copolymer; (C) The present invention relates to a resin paste composition in which a radical initiator and (D) a filler are uniformly dispersed.

The present invention also relates to the above resin paste composition, wherein the imide compound represented by the general formula (I) is a bisimide compound wherein n in the general formula (I) is 2. The present invention also relates to the resin paste composition, wherein the imide compound represented by the general formula (I) is an imide compound in which X in the general formula (I) is a residue of an aliphatic amine or an alicyclic amine. Further, the present invention relates to the resin paste composition, wherein the imide compound represented by the general formula (I) is an imide compound in which X in the general formula (I) is a residue of a dimer diamine. Further, the present invention relates to the resin paste composition, wherein the imide compound represented by the general formula (I) is an imide compound in which R ¹ and R ² in the general formula (I) each independently represent a hydrogen or a methyl group. The present invention also relates to a semiconductor device formed by bonding a semiconductor element to a support member using the resin paste composition and then sealing the semiconductor element.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION In the general formula (I), a specific example of X is a residue of an amine compound, particularly preferably a residue of a liquid amine compound. Further, a residue of an aliphatic amine or an alicyclic amine is preferable. In the general formula (I),
Preferably, R ¹ and R ² are each independently hydrogen or a methyl group. In the general formula (I), n is particularly preferably 2.

Specific examples of X in the general formula (I) further show a straight-chain or branched alkyl group,

Embedded image (Where R is a linear or branched alkyl group, R ′ is 1
An aryl group such as an oxyalkyl group or a phenyl group represented by an alkylene group of 1 to 3, m represents an integer of 1 to 100 (substituted with the above-mentioned linear or branched alkyl group, the oxyalkyl group or the like) Or a cycloalkyl group such as a cyclohexyl group (which may be substituted with the above-mentioned linear or branched alkyl group, the above-mentioned oxyalkyl group, etc., and may have an unsaturated bond). ), A linear or branched alkylene group,

Embedded image (Where R 'is an alkylene group of 1 to 3, m is 1 to 10
An oxyalkylene group represented by an oxyalkylene group or a cyclohexylene group represented by an integer of 0 (which may be substituted with the above-mentioned linear or branched alkyl group, the above-mentioned oxyalkyl group, etc .; An arylene group such as a phenylene group (which may be substituted with the aforementioned linear or branched alkyl group or the aforementioned oxyalkyl group).

Further, as X,

Embedded image (However, in these formulas, X ′ is the same as the divalent organic group of X, and Ar is the same as the above-mentioned arylene group). X is particularly preferably a residue of dimer diamine.

The compound represented by the general formula (I) is
Amines and general formula (II)

Embedded image [Wherein, R ¹ and R ² each independently represent hydrogen or a lower alkyl group].

Here, the amines are not particularly limited, but liquid amines are preferable, and liquid diamines are particularly preferable. Examples of the liquid amines include aliphatic amines, alicyclic amines, and dimer diamines that are derivatives of dimer acids or hydrogenated products thereof, and more specifically, ethylene diamine, 1,2-diaminopropane, Trimerenediamine, 2-amino-1-ethylaminobutane trimethylenediamine, 2-amino-1
-Butylaminobutanetrimethylenediamine, 2-amino-1-dodecylaminobutanetrimethylenediamine,
1,3-bismethylaminobutane trimethylenediamine, 1,3-bisethylaminobutanetrimethylenediamine, tetramethylenediamine, 2,3-diaminobutane, 1,2-diamino-2-methylpropane, 2-amino- 1-methylamino-2-methylpropane, 2-amino-1-ethylamino-2-methylpropane, 2-amino-1-isopropylamino-2-methylpropane, 2
-Amino-1-butylamino-2-methylpropane, 2
-Amino-1-sec-butylamino-2-methylpropane, 2-amino-1- (1-methylheptylamino)-
2-methylpropane, 2-amino-1- (1-ethylhexylamino) -2-methylpropane, 4-amino-1
-Ethylaminopentane, 4-amino-1-propylaminopentane, 4-amino-1-isobutylaminopentane, 4-amino-1-tert-butylaminopentane,
Pentamethylenediamine, bis (5-aminopentyl)
Amine, 2,3-diaminopentane, 1,2-diamino-2-methylbutane, 1-amino-2-methylaminomethylbutane, 2-amino-1-isopropylaminomethylbutane, 1,3-diamino-2-methylbutane , 2,
3-diamino-2-methylbutane, 1,3-diamino-
2,2-dimethylpropane, hexamethylenediamine,
1,3-diamino-2-methylpentane, 1,5-diamino-2-methylpentane, 2,4-diamino-2-methylpentane, 2-methyl-4-isopropyl-2-methylpentane, 1,4- Diamino-3-methylpentane, 1-amino-2-methyl-2-aminomethylbutane, 1,4-diaminoheptane, heptamethylenediamine, 2,3-diaminoheptane, 1,5-diamino-
2,2-dimethylpentane, 2,4-diamino-2,3
-Dimethylpentane, 5-amino-2-methyl-3-aminomethylpentane, 1,6-diaminooctane, 2,
3-diaminooctane, 2,7-bisisopropylaminooctane, 2,7-diamino-2-methylheptane,
4-amino-3-aminomethylheptane, 1,5-diamino-2,2,4-trimethylpentane, 1,4-diamino-2,2,3-trimethylpentane, 4,4-bisaminomethylheptane, 1 , 3-Diamino-2-propylheptane, 1,4-bismethylaminobutyne-
(2), 1,4-bisbutylaminobutyne- (2),
2,7-bisbutylaminooctadiyne- (3,5),
2,9-bismethylaminodecadiene- (3,7) -yne- (5), 2,9-bisethylaminodecadiene-
(3,7) -in- (5), 1,2-diaminocyclohexane, 1,3-diaminocyclohexane, 1,3-diamino-1-methylcyclohexane, 3,5-diamino-1,1-dimethylcyclohexane, 1,5-diamino-1,3-dimethylcyclohexane, 1,3-diamino-1-methyl-4-isopropylcyclohexane, 3,
7-diaminocycloheptene- (1), 4-amino-2
-Methylaminotoluene, 4-amino-2-ethylaminotoluene, 2-amino-4-ethylaminotoluene,
2-methylamino-2,5-diaminotoluene, 3,5
-Diaminotoluene, 4-aminobenzylamine, α-
Phenylethylenediamine, m-xylylenediamine,
ω, ω'-diaminomesitylene, 4-propenyl-m-
Liquid diamines such as phenylenediamine and 4,6'-diamino-5-ethoxy-2,3'-dimethyldiphenyl are preferred.

Further, the following equation

Embedded image Diaminosiloxane represented by the formula or viscosity at room temperature is 1mP
Aliphatic or alicyclic amines having a · s to 20,000 mPa · s are more preferable, and dimer diamine which is a derivative of dimer acid or a hydrogenated product thereof is particularly preferable.

[0012] Dimer acid is a viscous liquid obtained by polymerization of an unsaturated fatty acid having 18 carbon atoms.

Embedded image Indicated by

The dimer diamine is a diamine compound derived from this dimer acid by, for example, a typical amine synthesis reaction.

Embedded image Indicated by

The dimer acid is Versa Dime 216, Versa Dime 228, Enpol 1061, Enpol 10
08 (both trade names of Henkel Japan Co., Ltd.) and dimer diamine is Versamine 5
Hydrogenated dimer diamines such as No. 51 (trade name of Henkel Japan KK) are commercially available as Versamine 552 (trade name of Henkel Japan KK).

The acid anhydride represented by the general formula (I) constituting the component (A) used in the present invention includes:
Although not particularly limited, maleic anhydride or citraconic anhydride is preferred, and maleic anhydride is particularly preferred.

The reaction product obtained by reacting the amine as the component (A) used in the present invention with the acid anhydride represented by the general formula (I) has an equivalent or a small excess relative to the amino group. It is obtained by reacting an acid anhydride of the general formula (I). This reaction is preferably performed in a temperature range of -78 ° C to 200 ° C, and a condensing agent, a catalyst, a polymerization inhibitor, and the like can be added as needed to suppress a side reaction. Further, an optional solvent can be used as necessary to make the reaction uniform.

Acetic anhydride, N, N'-dicyclohexylcarbodiimide, N, N
N'-diisopropylcarbodiimide, N-ethyl-
N'-3-dimethylaminopropylcarbodiimide, N
-Ethyl-N'-3-dimethylaminopropylcarbodiimide hydrochloride, benzotriazol-1-yl-tris (dimethylamino) phosphonium hexafluorophosphide, diphenylphosphoryl azide, phosphoric acid derivatives and the like are preferable.

The catalyst used in the above reaction is N 2
-Hydroxysuccinimide, 1-hydroxybenzotriazole, 3,4-dihydro-3-hydroxy-4-
Oxo-1,2,3-benzotriazine, triethylamine, 1,4-diazabicyclo [2.2.2] octane and the like are preferable.

Examples of the polymerization inhibitor used in the above reaction include quinones, hydroquinone, nitro / nitroso compounds, amines, polyoxy compounds, sulfur-containing compounds such as p-tert-butylcatechol, picric acid and dithiobenzoyl disulfide; Copper, diphenylpicrylhydrazyl, tri-p-nitrophenylmethyl, triphenylfeldadyl, N- (3-N-oxyanilino-1,3-
(Dimethylbutylidene) aniline oxide and the like are preferred.

The solvent used in the above reaction includes:
Tetrahydrofuran, dichloromethane, chloroform,
Carbon tetrachloride, methanol, ethyl acetate, dioxane, toluene, N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, benzonitrile, anisole, nitrobenzene, sulfolane, di (ethylene glycol) dimethyl ether And the like, and these can be used alone or in combination of two or more.

As the liquid rubber component (B) used in the present invention, those described above can be used. The epoxy equivalent is 10 to 1000 and the viscosity at room temperature is 1000.
Epoxidized polybutadiene that is Pa · s or less, epoxy equivalent is 10 to 1000, and viscosity at room temperature is 1000 Pa
The epoxidized polybutadiene hydrogenated product having a viscosity of not more than 1000 Pa · s at room temperature or a carboxyl group-terminated butadiene / acrylonitrile copolymer having a viscosity at room temperature of not more than 1000 s is more preferable.

The amount of the component (B) is preferably 0.1 to 50 parts by weight, more preferably 0.5 to 30 parts by weight, based on 100 parts by weight of the total amount of the resin paste composition. It is particularly preferred that the amount be 1 to 20 parts by weight. When the amount is less than 0.1 part by weight, the effect of reducing the chip warpage of the resin paste composition is inferior, and the adhesive strength is significantly reduced. On the other hand, when the amount exceeds 50 parts by weight, the viscosity of the resin paste composition becomes extremely high, and the workability at the time of its preparation and the workability of application at the time of use are deteriorated.

The radical initiator of the component (C) used in the present invention is not particularly limited, but is preferably a peroxide from the viewpoint of voids and the like, and the curability and viscosity stability of the adhesive paste composition. Decomposition temperature is 70 ~ 170 ℃
Are preferred.

Examples of usable radical initiators include, for example, methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, methyl cyclohexanone peroxide, acetylacetone peroxide, isobutyryl peroxide, o-
Methylbenzoyl peroxide, bis-3,5,5-trimethylhexanoyl peroxide, lauroyl peroxide, benzoyl peroxide, 2,4,4-trimethylpentyl-2-hydroperoxide, diisopropylbenzene peroxide, cumene hydroperoxide Oxides,
tert-butyl hydroperoxide, dicumyl peroxide, 2,5-dimethyl-2,5-di- (tert-butylperoxy) hexane, 1,3-bis- (tert-butylperoxy-isopropyl) benzene, tert-butyl cumyl peroxide, di-tert-butyl peroxide, 2,
5-dimethyl-2,5-di- (tert-butylperoxy) -hexyne-3, 1,1-di-tert-butylperoxy-3,3,5-trimethylcyclohexane, 1,1
-Di-tert-butylperoxycyclohexane, 2,2
-Di- (tert-butylperoxy) -butane, 4,4-
Di-tert-butylperoxyvaleric acid-n-butyl ester, 2,4,4-trimethylpentylperoxy-phenoxyacetone, α-cumylperoxy neodecanoate, tert-butylperoxy-neodecanate, tert- Butylperoxy-2-ethylhexanoate, tert-butylperoxy-isobutyrate, di-te
rt-butyl peroxy-hexahydroterephthalate,
Examples include, but are not limited to, tert-butyl peroxyacetate, tert-butyl peroxybenzoate, and the like.

The amount of the component (C) is preferably 0.01 to 50 parts by weight, more preferably 0.05 to 20 parts by weight, based on 100 parts by weight of the total amount of the resin paste composition. It is particularly preferred to use 0.1 to 10 parts by weight. When the amount of the component (C) is less than 0.01 part by weight, the adhesive strength of the resin paste composition is significantly reduced, and when it is more than 50 parts by weight, the viscosity stability of the resin paste composition is significantly reduced. Its adhesive strength is significantly reduced.

The filler of the component (D) used in the present invention is not particularly limited, and various fillers may be used. Examples thereof include gold, silver, copper, nickel, iron, aluminum, stainless steel, and oxide. Examples include powders of silicon, boron nitride, aluminum nitride, aluminum borate, aluminum oxide, and the like.

The amount of the filler is not particularly limited, but may be 5 to 100 parts by weight of the total amount of the resin paste composition.
The amount is preferably from 95 to 95 parts by weight, more preferably from 10 to 90 parts by weight, and particularly preferably from 20 to 85 parts by weight. If the amount is less than 5 parts by weight, the viscosity of the resin paste composition will be extremely low, the coating workability at the time of its use will be deteriorated, and its adhesive strength will be significantly reduced. If it exceeds 95 parts by weight, the viscosity of the resin paste composition becomes too high, and the workability at the time of preparation and the workability of application at the time of use deteriorate.

A diluent may be added to the resin paste composition of the present invention, if necessary, in order to further improve the workability in preparing the paste composition and the workability in application during use. These diluents include vinyl ether derivatives, acrylate and methacrylate derivatives, styrene and styrene derivatives.

Viscosity of resin paste (EHD rotational viscometer, measured at 25 ° C., rotation speed of 3 ° cone 0.5 rpm)
Is preferably 5 to 500 Pa · s, particularly 10 to 200 Pa · s
Is preferred. If the viscosity is too high or too low, the coating workability is poor. The diluent is used so that the viscosity of the resin paste is as described above. For that purpose, the diluent is preferably used in the following amount. The amount of the diluent used is 0.5 to 5 based on 100 parts by weight of the total amount of the resin paste composition.
It is preferably 0 parts by weight, more preferably 1 to 30 parts by weight, and particularly preferably 2 to 20 parts by weight. When the amount is less than 0.5 part by weight, the viscosity of the resin paste composition becomes 500 Pa · s or more, and the workability at the time of production and the workability at the time of use deteriorate. Also, 5
If it exceeds 0 parts by weight, the viscosity of the resin paste composition is 5 Pa
-It becomes s or less, and the coating workability at the time of use deteriorates.

Examples of the vinyl ether derivative of the diluent include ethyl vinyl ether, n-propyl vinyl ether, isopropyl vinyl ether, n-butyl vinyl ether, isobutyl vinyl ether, tert-butyl vinyl ether, tert-amyl vinyl ether,
-Ethylhexyl vinyl ether, dodecyl vinyl ether, octadecyl vinyl ether, cyclohexyl vinyl ether, 1,4-butanediol divinyl ether, 1,4-butanediol monovinyl ether, 1,
6-hexysandiol divinyl ether, 1,6-hexanediol monovinyl ether, 1,4-cyclohexanedimethanol divinyl ether, 1,4-cyclohexanedimethanol monovinyl ether, ethylene glycol divinyl ether, ethylene glycol monovinyl ether, ethylene glycol Butyl vinyl ether, diethylene glycol divinyl ether, diethylene glycol monovinyl ether, triethylene glycol divinyl ether, triethylene glycol methyl vinyl ether, tetraethylene glycol divinyl ether, trimethylolpropane trivinyl ether,
Polyethylene glycol divinyl ether, polyethylene glycol methyl vinyl ether, polytetrahydrofuran vinyl ether and the like are preferred.

Examples of the acrylate and methacrylate derivatives of the diluent include lauryl acrylate, lauryl methacrylate, stearyl acrylate, stearyl methacrylate, 2-phenoxyethyl acrylate, dicyclopentenyl methacrylate, and 2- (dicyclopentenyloxy). ) Ethyl acrylate, 2- (dicyclopentenyloxy) ethyl methacrylate, 1,6-hexanediol diacrylate,
Tripropylene glycol diacrylate, polyethylene glycol diacrylate, trimethylolpropane triacrylate, 2- (2-ethoxyethoxy) ethyl acrylate, tetrahydrofurfuryl acrylate, isodecyl acrylate, tetraethylene glycol diacrylate, tetrahydrofurfuryl methacrylate, cyclohexyl methacrylate , Isodecyl methacrylate, glycidyl methacrylate, polypropylene glycol monomethacrylate, triethylene glycol dimethacrylate, ethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate,
Polyethylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, diethylene glycol dimethacrylate, 1,6-hexanediol dimethacrylate, neopentyl glycol dimethacrylate,
Preferred are 1,3-butylene glycol dimethacrylate, trimethylolpropane trimethacrylate and the like.

Examples of the styrene derivative of the diluent include o-, m- or p-methylstyrene, 2,4-,
2,5-, 2,6-, 3,4- or 3,5-dimethylstyrene, 2,4,6- or 2,4,5-trimethylstyrene, pentamethylstyrene, o-, m- or p- Ethylstyrene, 2,5- or 3,5-diethylstyrene,
2,4,5-triethylstyrene, 2,3,4,5-tetraethylstyrene, pentaethylstyrene, o-, m
-Or p-isopropylstyrene, pn-, m-sec
-, P-sec-, m-tert- or p-tert-butylstyrene, p-hexylstyrene, p-heptylmethylene,
p-octylstyrene, p-nonylstyrene, p-decylstyrene, p-dodecylstyrene, p-tetradecylstyrene, p-hexadecylstyrene, p-octadecylstyrene, p-sec-amylstyrene, p-sec-hexylstyrene , P-sec-heptylstyrene, p-sec-
Octyl styrene, p-sec-nonyl styrene, p-sec
-Decylstyrene, 2,4,5-triisopropylstyrene, 2,6-dimethyl-4-tert-butylstyrene,
p-cyclohexylstyrene, p-benzylstyrene,
1-vinyl-2- (2-phenylethyl) benzene is preferred.

The resin paste composition of the present invention may further contain, if necessary, a hygroscopic agent such as calcium oxide and magnesium oxide, an adhesion enhancer such as a silane coupling agent and a titanium coupling agent, a nonionic surfactant, A wetting improver such as a fluorine-based surfactant, an antifoaming agent such as silicone oil, an ion trapping agent such as an inorganic ion exchanger, a polymerization inhibitor, and the like can be appropriately added.

To produce the resin paste composition of the present invention, (A) an imide compound, (B) a liquid rubber component, (C)
The radical initiator and (D) filler, together with a diluent and various additives used as necessary, are dispersed or dissolved in a lump or divided unit such as a stirrer, a grinder, a three-roller, and a planetary mixer. What is necessary is just to put in the apparatus which combined suitably, and heat and mix, melt | dissolve, pulverize and knead | mix or disperse | distribute as needed, and make it into a uniform paste form.

In the present invention, a semiconductor device can be obtained by bonding a semiconductor element and a support member using the resin paste composition produced as described above. Using a resin paste composition of the present invention to lead frame a semiconductor element, a glass epoxy (cured glass fiber reinforced epoxy resin) substrate, a polyimide film,
In order to adhere to a support member such as a polyimide tape, an organic substrate such as a BT substrate (a substrate made of a reaction-cured BT resin containing a cyanate monomer and its oligomer and bismaleimide), first, a resin paste composition is provided on the support member. Is applied by a dispense method, a screen printing method, a stamping method, or the like, and then the semiconductor element is press-bonded, and then heat-cured using a heating device such as an oven or a heat block. Further, after a wire bonding step, the semiconductor device is sealed by a usual method, whereby a completed semiconductor device can be obtained.

[0036]

Next, the present invention will be described in detail with reference to examples, but the present invention is not limited thereto. The materials used in the following Examples and Comparative Examples were produced by the following method or obtained.

(1) Preparation of epoxy resin 7.5 parts by weight of YDF-170 (trade name of bisphenol F type epoxy resin manufactured by Toto Kasei Co., Ltd., epoxy equivalent = 170) and YL-980 (bisphenol A manufactured by Yuka Shell Epoxy Co., Ltd.) Type epoxy resin, epoxy equivalent = 185) 7.
Five parts by weight were heated to 80 ° C., and stirring was continued for 1 hour to obtain a uniform epoxy resin solution. (2) Preparation of curing agent 1.0 part by weight of H-1 (trade name of phenol novolak resin manufactured by Meiwa Kasei Co., Ltd., OH equivalent = 106) and PP-101 as a diluent (a product of alkylphenyl glycidyl ether manufactured by Toto Kasei Co., Ltd.) (Name, epoxy equivalent = 230) 2.0 parts by weight was heated to 100 ° C. and stirred for 1 hour to obtain a uniform phenol resin solution.

(3) Preparation of reaction product of dimer diamine and maleic anhydride Versamine 551 (trade name of dimer diamine, amine value = Henkel Japan Co., Ltd.) was placed in a reaction vessel equipped with a stirrer, thermometer and reflux condenser. 200-210) 100
Then, 30 parts by weight of maleic anhydride and 30 parts by weight of maleic anhydride were added and reacted at 0 ° C. while passing nitrogen gas through. Then, a condensing agent was added and the mixture was stirred at room temperature overnight. Next, 1-hydroxybenzotriazole or 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine was added and reacted at 50 ° C. After removing the solvent under reduced pressure, the residue is subjected to hexane extraction and then methanol washing to obtain a desired reaction product (a compound in which R ¹ and R ² in the general formula (I) are hydrogen, n is 2, and X is a residue of dimer diamine). ) Got.

(4) Curing accelerator 2P4MHZ (trade name of 2-phenyl-4-methyl-5-hydroxymethylimidazole manufactured by Shikoku Chemicals Co., Ltd.) (5) Liquid rubber component Eporide PB4700 (epoxidation manufactured by Daicel Chemical Industries, Ltd.) Polybutadiene trade name, epoxy equivalent = 150
(6) Radical initiator Trigonox 22-B75 (1,1 manufactured by Kayaku Akzo)
-Trade name of di-tert-butylperoxycyclohexane)

(7) Silane coupling agent A-174 (trade name of 3-methacryloxypropyltrimethoxysilane manufactured by Nippon Unicar) (8) Filler TCG-1 (trade name of silver powder manufactured by Tokuriki Chemical Laboratory) It is.

Examples 1 and 2 and Comparative Examples 1 to 4 Each material was mixed at the compounding ratio shown in Table 1 and kneaded using three rolls, followed by defoaming at 5 Torr (Torr) or less for 10 minutes. This was performed to obtain a resin paste composition. Characteristics of this resin paste composition (viscosity, peel strength and reflow resistance)
Was measured by the following method, and the results are shown in Table 1.

Viscosity The viscosity (Pa · s) at 25 ° C. was measured using an EHD type rotational viscometer (manufactured by Tokyo Keiki Co., Ltd.). Peel strength The resin paste composition is applied to a copper lead frame or a glass / epoxy substrate (E-679, trade name of Hitachi Chemical Co., Ltd .; the same applies hereinafter) in an amount of about 3.2 mg, and 8 mm ×
An 8 mm Si chip (0.4 mm thick) was pressed, heated in an oven to 150 ° C. over 30 minutes, and cured at 150 ° C. for 1 hour. The peel strength (kgf / chip) at 240 ° C. was measured using an automatic adhesive force measuring device (manufactured by Hitachi Chemical Co., Ltd.).

Chip warpage About 3.2 mg of the resin paste composition was applied on a copper lead frame or a glass epoxy substrate, and 5 mm × 13
mm Si chip (0.4 mm thick) was crimped, and the temperature was raised in an oven to 150 ° C over 30 minutes.
Cured for hours. Use a surface roughness meter (Sloan, Dektu
k3030) was used to measure chip warpage (μm).
Using a stylometer, scan the sample surface with a needle,
The difference between the highest point and the lowest point was calculated.

Using the resin paste compositions obtained in the respective Examples and Comparative Examples, the following lead frames or glass / epoxy substrates and Si chips were cured and bonded under the following curing conditions. Thereafter, the package was sealed with an epoxy sealing material (trade name: CEL-4620) manufactured by Hitachi Chemical Co., Ltd. to obtain a package for a solder reflow test. The package was allowed to absorb moisture for 96 hours in a thermo-hygrostat set at a temperature and humidity of 85 ° C. and 60%, respectively. Thereafter, solder reflow was performed under a reflow condition of 240 ° C./10 seconds, and the number of occurrences of external cracks in the package was observed with a microscope (magnification: 15 times), and the number of occurrences of internal cracks in the package was observed with an ultrasonic microscope. The number of cracked samples is shown for five samples. Chip size: 8mm x 10mm Package: QFP, 14mm x 20mm x 2mm Supporting member: Copper lead frame or glass / epoxy substrate Curing condition: Raise the temperature to 150 ° C over 30 minutes,
Cure at 0 ° C. for 1 hour.

[0045]

[Table 1]

From the results shown in Table 1, the resin paste compositions of the present invention (Examples 1 and 2) had a peel strength and a peel strength which were lower than those of the conventional resin paste composition using an epoxy resin (Comparative Example 1). The chip warpage showed a good value, and the reflow resistance was also excellent. From this, it was confirmed that according to the resin paste composition of the present invention, occurrence of external cracks in the package was suppressed, and a highly reliable package was obtained even when a copper lead frame was used.

[0047]

Industrial Applicability The resin paste composition of the present invention comprises an IC,
It is suitable for bonding a semiconductor element such as an LSI to a lead frame, a glass epoxy wiring board, and the like. When used as a die bonding agent for a semiconductor device, even in a copper lead frame, chip cracks, chip warpage, and solder reflow may occur. The peeling of the paste layer can be suppressed, and the occurrence of reflow cracks is reduced. As a result, a semiconductor device with significantly improved reliability can be provided.

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Yoji Katayama 4-1-1, Higashicho, Hitachi City, Ibaraki Prefecture F-term (reference) in the Yamazaki Plant of Hitachi Chemical Co., Ltd. 4J002 AC101 CD181 CD201 DA078 DA088 DA098 DC008 DE148 DF018 DJ018 DJ018 DK008 EK017 EK037 EK047 EK067 EK077 EU026 EX076 FD018 GQ05 4J036 AK03 DB29 DC03 DC06 DC22 DD08 FA02 FA04 JA07 4J040 CA071 CA072 EC371 EC372 FA191 GA07 HA066 HA076 HA136 HA206 HA306 HA326 HB41 JA05 BA01 LA11

Claims (6)

[Claims] (A) General formula (I) [Wherein, X is an n-valent organic group, and R ¹ and R ²
Are each independently hydrogen or a lower alkyl group, and n is 1, 2
Or (B) one or more liquid rubber components selected from epoxidized polybutadiene, hydrogenated epoxidized polybutadiene, and carboxyl group-terminated butadiene / acrylonitrile copolymer; (C) A resin paste composition in which a radical initiator and (D) a filler are uniformly dispersed. 2. The resin paste composition according to claim 1, wherein the imide compound represented by the general formula (I) is a bisimide compound wherein n in the general formula (I) is 2. 3. The resin paste composition according to claim 1, wherein the imide compound represented by the general formula (I) is an imide compound in which X in the general formula (I) is a residue of an aliphatic amine or an alicyclic amine. object. 4. The resin paste composition according to claim 1, wherein the imide compound represented by the general formula (I) is an imide compound in which X in the general formula (I) is a residue of a dimer diamine. 5. The imide compound represented by the general formula (I), wherein R ¹ and R ² in the general formula (I) are each independently a hydrogen or a methyl group.
The resin paste composition as described in the above. 6. A semiconductor device obtained by bonding a semiconductor element to a supporting member using the resin paste composition according to claim 1, and sealing the semiconductor element.