JP2000070887A - Supply of pure water containing carbon dioxide gas dissolved therein, unit for supplying pure water containing carbon dioxide gas dissolved therein, and substrate processing apparatus equipped with the same - Google Patents
Supply of pure water containing carbon dioxide gas dissolved therein, unit for supplying pure water containing carbon dioxide gas dissolved therein, and substrate processing apparatus equipped with the sameInfo
- Publication number
- JP2000070887A JP2000070887A JP10249783A JP24978398A JP2000070887A JP 2000070887 A JP2000070887 A JP 2000070887A JP 10249783 A JP10249783 A JP 10249783A JP 24978398 A JP24978398 A JP 24978398A JP 2000070887 A JP2000070887 A JP 2000070887A
- Authority
- JP
- Japan
- Prior art keywords
- carbon dioxide
- pure water
- dissolved
- dioxide gas
- substrate processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title claims abstract description 390
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 223
- 229910002092 carbon dioxide Inorganic materials 0.000 title claims abstract description 194
- 239000001569 carbon dioxide Substances 0.000 title claims abstract description 191
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 54
- 229910052799 carbon Inorganic materials 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract description 14
- 238000005259 measurement Methods 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 description 8
- 239000012510 hollow fiber Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、純水に炭酸ガスを
溶解させて生成された炭酸ガス溶存純水を基板処理装置
に供給する炭酸ガス溶存純水供給方法及び炭酸ガス溶存
純水供給ユニット並びにそれを備えた基板処理装置に係
り、特に、比抵抗値の測定に起因する金属イオン等を排
除した炭酸ガス溶存純水を供給する技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for supplying carbon dioxide-dissolved pure water and a unit for supplying carbon dioxide-dissolved pure water for supplying a carbon dioxide-dissolved pure water generated by dissolving carbon dioxide in pure water to a substrate processing apparatus. In addition, the present invention relates to a substrate processing apparatus having the same, and more particularly to a technique for supplying carbon dioxide-dissolved pure water excluding metal ions and the like caused by measurement of a specific resistance value.
【0002】[0002]
【従来の技術】半導体等の製造工程では、基板の金属汚
染等の各種汚染を防止するために、金属イオン、微生
物、微粒子などの不純物が除去された比抵抗値の極めて
高い純水や、純水よりもさらに純度の高い超純水が利用
されている。このような極めて高い比抵抗値を有する純
水や超純水(以下、単に「純水」とよぶ)は帯電しやす
く、基板処理や送液の際に帯電して、基板に静電破壊等
の悪影響を及ぼす場合があることが知られている。2. Description of the Related Art In the process of manufacturing semiconductors and the like, in order to prevent various contaminations such as metal contamination of a substrate, pure water having extremely high specific resistance from which impurities such as metal ions, microorganisms and fine particles have been removed, or pure water or the like are used. Ultrapure water with higher purity than water is used. Pure water or ultrapure water (hereinafter, simply referred to as “pure water”) having such an extremely high specific resistance value is easily charged, and is charged during substrate processing or liquid sending, causing electrostatic breakdown on the substrate. It is known that there may be adverse effects.
【0003】近年、基板処理や送液時に純水が帯電する
のを防止するために、純水に炭酸ガスを溶解させること
により純水の比抵抗値を下げる試みがなされている。こ
の純水に炭酸ガスが溶解された炭酸ガス溶存純水は、炭
酸ガス溶存純水供給ユニットによって生成されている。
炭酸ガス溶存純水供給ユニットは、生成した炭酸ガス溶
存純水を基板処理装置に供給する。このとき、炭酸ガス
溶存純水供給ユニットは、基板処理装置に供給する炭酸
ガス溶存純水の比抵抗値を所定の値で管理するため基板
処理装置に供給する前に、炭酸ガス溶存純水の比抵抗値
を比抵抗計によって測定している。In recent years, attempts have been made to lower the specific resistance of pure water by dissolving carbon dioxide gas in the pure water in order to prevent the pure water from being charged during substrate processing or liquid transport. The carbon dioxide-dissolved pure water in which carbon dioxide is dissolved in the pure water is generated by a carbon dioxide-dissolved pure water supply unit.
The carbon dioxide dissolved pure water supply unit supplies the generated carbon dioxide dissolved pure water to the substrate processing apparatus. At this time, the carbon dioxide dissolved pure water supply unit controls the specific resistance value of the carbon dioxide dissolved pure water to be supplied to the substrate processing apparatus at a predetermined value before supplying the carbon dioxide dissolved pure water to the substrate processing apparatus. The specific resistance is measured by a specific resistance meter.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな構成を有する従来例の場合には、次のような問題が
ある。近年、回路素子の微細化、小電力化に伴って、各
素子の低電圧駆動化が進んでおり、金属汚染等が無いよ
り清浄な状態においての基板処理が求められているの
で、特に基板の洗浄処理に利用される純水の系統では、
メタルフリーすなわち純水が触れる部分では金属部品を
使用しないような装置で構成されている。しかし、従来
の炭酸ガス溶存純水供給ユニットは、基板処理装置に供
給する炭酸ガス溶存純水の比抵抗値を比抵抗計によって
直接測定していたので、比抵抗計の測定部である電極か
ら金属イオンが溶出して、炭酸ガス溶存純水を金属イオ
ンで汚染するという問題が生じている。However, the prior art having such a structure has the following problems. In recent years, with the miniaturization of circuit elements and the reduction in power consumption, the driving of each element at a lower voltage has been progressing, and substrate processing in a cleaner state free of metal contamination and the like has been required. In the pure water system used for the cleaning process,
The device is configured so that metal parts are not used, that is, metal parts are not used in a portion where pure water touches. However, since the conventional carbon dioxide-dissolved pure water supply unit directly measures the specific resistance of the carbon dioxide-dissolved pure water to be supplied to the substrate processing apparatus by using a resistivity meter, the measurement is performed from an electrode which is a measuring unit of the resistivity meter. There is a problem that the metal ions are eluted and the carbon dioxide dissolved pure water is contaminated with the metal ions.
【0005】本発明は、このような事情に鑑みてなされ
たものであって、比抵抗計の測定に起因する金属イオン
を排除した炭酸ガス溶存純水を基板処理装置に供給する
炭酸ガス溶存純水供給方法及び炭酸ガス溶存純水供給ユ
ニット並びにそれを備えた基板処理装置を提供すること
を目的とする。The present invention has been made in view of such circumstances, and has been made in consideration of the above circumstances, and provides a carbon dioxide-dissolved pure water for supplying a carbon dioxide-dissolved pure water, which excludes metal ions caused by measurement of a resistivity meter, to a substrate processing apparatus. An object of the present invention is to provide a water supply method, a carbon dioxide dissolved pure water supply unit, and a substrate processing apparatus including the same.
【0006】[0006]
【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。請求項1
に記載の発明は、純水内に炭酸ガスを溶解させた炭酸ガ
ス溶存純水を生成するとともに、比抵抗計によって比抵
抗値が測定された前記炭酸ガス溶存純水を基板処理装置
に供給する炭酸ガス溶存純水供給方法であって、前記純
水内に炭酸ガスを溶解させて炭酸ガス溶存純水を生成す
る過程と、前記炭酸ガス溶存純水を前記基板処理装置に
供給する過程と、前記基板処理装置に供給される炭酸ガ
ス溶存純水の一部を取り出す過程と、前記取り出された
炭酸ガス溶存純水の比抵抗値を前記比抵抗計によって測
定する過程とを備えたことを特徴とするものである。The present invention has the following configuration in order to achieve the above object. Claim 1
The invention described in (1) generates carbon dioxide gas-dissolved pure water in which carbon dioxide gas is dissolved in pure water, and supplies the carbon dioxide gas-dissolved pure water whose specific resistance is measured by a resistivity meter to a substrate processing apparatus. A method for supplying carbon dioxide dissolved pure water, wherein carbon dioxide gas is dissolved in the pure water to generate carbon dioxide dissolved pure water, and a step of supplying the carbon dioxide dissolved pure water to the substrate processing apparatus. A step of extracting a part of the carbon dioxide dissolved pure water supplied to the substrate processing apparatus, and a step of measuring a specific resistance value of the extracted carbon dioxide dissolved pure water by the resistivity meter. It is assumed that.
【0007】請求項2に記載の発明は、純水内に炭酸ガ
スを溶解させた炭酸ガス溶存純水を生成するとともに、
比抵抗計によって比抵抗値が測定された前記炭酸ガス溶
存純水を基板処理装置に供給する炭酸ガス溶存純水供給
ユニットであって、前記純水内に炭酸ガスを溶解させて
炭酸ガス溶存純水を生成する炭酸ガス溶存純水生成手段
と、前記炭酸ガス溶存純水生成手段で生成された炭酸ガ
ス溶存純水を前記基板処理装置に供給する供給管と、前
記供給管によって前記基板処理装置に供給される前記炭
酸ガス溶存純水の一部を分岐して取り出す分岐管と、前
記分岐管に取り付けられて前記炭酸ガス溶存純水の比抵
抗値を測定する比抵抗計とを備えたことを特徴とするも
のである。According to a second aspect of the present invention, carbon dioxide dissolved pure water in which carbon dioxide is dissolved in pure water is generated,
A carbon dioxide gas-dissolved pure water supply unit for supplying the carbon dioxide gas-dissolved pure water whose specific resistance value is measured by a resistivity meter to a substrate processing apparatus, wherein the carbon dioxide gas is dissolved in the pure water to produce a carbon dioxide-dissolved pure water. CO2 dissolved pure water generating means for generating water, a supply pipe for supplying the CO2 dissolved pure water generated by the CO2 dissolved pure water generating means to the substrate processing apparatus, and the substrate processing apparatus by the supply pipe. A branch pipe for branching out a part of the carbon dioxide dissolved pure water supplied to the branch pipe, and a resistivity meter attached to the branch pipe and measuring a specific resistance value of the carbon dioxide dissolved pure water. It is characterized by the following.
【0008】請求項3に記載の発明は、請求項2に記載
の炭酸ガス溶存純水供給ユニットにおいて、前記ユニッ
トは、さらに、前記炭酸ガス溶存純水生成手段において
純水に溶解させる炭酸ガスの溶解量を調整する調整手段
を備えるものである。According to a third aspect of the present invention, in the carbon dioxide dissolved pure water supply unit according to the second aspect, the unit further comprises a carbon dioxide dissolved pure water dissolving unit in the carbon dioxide dissolved pure water generating means. It has adjusting means for adjusting the amount of dissolution.
【0009】請求項4に記載の発明は、請求項3に記載
の炭酸ガス溶存純水供給ユニットにおいて、前記ユニッ
トは、さらに、前記比抵抗計で測定して得られる比抵抗
値に応じて、前記調整手段を制御する制御手段を備える
ものである。According to a fourth aspect of the present invention, in the carbon dioxide gas-dissolved pure water supply unit according to the third aspect, the unit further comprises a specific resistance value obtained by measuring with the specific resistance meter. And a control means for controlling the adjusting means.
【0010】請求項5に記載の発明は、請求項2ないし
請求項3のいずれかに記載の炭酸ガス溶存純水供給ユニ
ットを備えることを特徴とする基板処理装置である。According to a fifth aspect of the present invention, there is provided a substrate processing apparatus comprising the carbon dioxide dissolved pure water supply unit according to any one of the second to third aspects.
【0011】[0011]
【作用】本発明の作用は次のとおりである。請求項1に
記載の発明によれば、純水に炭酸ガスが溶解されて生成
された炭酸ガス溶存純水を基板処理装置に供給する。こ
のとき、基板処理装置に供給される炭酸ガス溶存純水の
一部を取り出す。その取り出した一部の炭酸ガス溶存純
水の比抵抗値を比抵抗計によって測定する。したがっ
て、取り出されなかった部分の炭酸ガス溶存純水は比抵
抗計に直接触れることなく基板処理装置に供給される。The operation of the present invention is as follows. According to the first aspect of the present invention, carbon dioxide dissolved pure water generated by dissolving carbon dioxide in pure water is supplied to the substrate processing apparatus. At this time, a part of carbon dioxide dissolved pure water supplied to the substrate processing apparatus is taken out. A specific resistance value of a part of the removed carbon dioxide dissolved pure water is measured by a specific resistance meter. Therefore, the carbon dioxide-dissolved pure water in the portion not taken out is supplied to the substrate processing apparatus without directly touching the resistivity meter.
【0012】請求項2に記載の発明によれば、炭酸ガス
溶存純水生成手段は、純水に炭酸ガスを溶解させて、炭
酸ガス溶存純水を生成する。供給管は、炭酸ガス溶存純
水生成手段で生成された炭酸ガス溶存純水を基板処理装
置に供給する。分岐管は、基板処理装置に供給される途
中の炭酸ガス溶存純水の一部を分岐して取り出す。比抵
抗計は、分岐管で取り出された一部の炭酸ガス溶存純水
の比抵抗値を測定する。したがって、分岐管によって取
り出されなかった部分の炭酸ガス溶存純水は、比抵抗計
に直接触れることなく基板処理装置に供給される。According to the second aspect of the present invention, the carbon dioxide dissolved pure water generating means dissolves carbon dioxide in the pure water to generate carbon dioxide dissolved pure water. The supply pipe supplies the carbon dioxide dissolved pure water generated by the carbon dioxide dissolved pure water generating means to the substrate processing apparatus. The branch pipe branches out a part of the carbon dioxide dissolved pure water that is being supplied to the substrate processing apparatus. The resistivity meter measures the resistivity value of a part of the carbon dioxide-dissolved pure water taken out from the branch pipe. Therefore, the carbon dioxide-dissolved pure water in the portion not taken out by the branch pipe is supplied to the substrate processing apparatus without directly touching the resistivity meter.
【0013】請求項3に記載の発明によれば、調整手段
は、炭酸ガス溶存純水生成手段において純水に溶解され
る炭酸ガスの溶解量を調整する。According to the third aspect of the invention, the adjusting means adjusts the amount of carbon dioxide dissolved in the pure water in the carbon dioxide dissolved pure water generating means.
【0014】請求項4に記載の発明によれば、制御手段
は、炭酸ガス溶存純水の比抵抗値に応じて、純水に溶解
させる炭酸ガスの溶解量を適宜調整するように調整手段
を制御する。According to the fourth aspect of the present invention, the control means controls the adjusting means so as to appropriately adjust the dissolved amount of the carbon dioxide dissolved in the pure water according to the specific resistance of the carbon dioxide-dissolved pure water. Control.
【0015】請求項5に記載の発明によれば、基板処理
装置は、装置外から純水が送られてくると、この基板処
理装置に備える請求項2ないし請求項4のいずれかに記
載の発明に係る炭酸ガス溶存純水供給ユニットで炭酸ガ
ス溶存純水を生成して、この炭酸ガス溶存純水によって
基板処理を行なう。According to the fifth aspect of the present invention, the substrate processing apparatus is provided with the substrate processing apparatus when pure water is sent from outside the apparatus. Carbon dioxide-dissolved pure water is generated by the carbon dioxide-dissolved pure water supply unit according to the present invention, and the substrate is treated with the carbon dioxide-dissolved pure water.
【0016】[0016]
【発明の実施の形態】以下、図面を参照して本発明の実
施例を説明する。図1は、実施例に係る基板処理装置を
示すブロック図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram illustrating the substrate processing apparatus according to the embodiment.
【0017】実施例に係る基板処理装置は、この装置が
配備された工場に備える純水供給源から供給される純水
に炭酸ガスを溶解させた炭酸ガス溶存純水を供給する炭
酸ガス溶存純水供給ユニット1と、この炭酸ガス溶存純
水を用いて、半導体ウエハやガラス基板などの基板に洗
浄やリンス等の処理を行なう基板処理ユニット2とを備
えて構成されている。A substrate processing apparatus according to an embodiment provides a carbon dioxide-dissolved pure water in which carbon dioxide is dissolved in pure water supplied from a pure water supply source provided in a factory provided with the apparatus. The system includes a water supply unit 1 and a substrate processing unit 2 that performs processing such as cleaning and rinsing on a substrate such as a semiconductor wafer or a glass substrate using the carbon dioxide dissolved pure water.
【0018】炭酸ガス溶存純水供給ユニット1は、純水
供給源から送られてくる純水を流通させるとともに、こ
の純水に炭酸ガスを溶解させた後、基板処理ユニット2
に炭酸ガスが溶解された純水である炭酸ガス溶存純水を
供給するための供給管3を備えている。供給管3は、そ
の一端側が純水供給源から炭酸ガス溶存純水供給ユニッ
ト1にまで純水を送液ための図示しない送液管に連通接
続されており、その他端側は基板処理ユニット2の図示
しない純水供給部に繋がれている。The carbon dioxide dissolved pure water supply unit 1 circulates pure water sent from a pure water supply source, and dissolves carbon dioxide in the pure water.
A supply pipe 3 for supplying carbon dioxide-dissolved pure water, which is pure water in which carbon dioxide is dissolved. One end of the supply pipe 3 is connected to a liquid supply pipe (not shown) for supplying pure water from the pure water supply source to the carbon dioxide dissolved pure water supply unit 1, and the other end is connected to the substrate processing unit 2. (Not shown).
【0019】供給管3には、純水供給源から送液されて
きた純水に炭酸ガスを溶解させた炭酸ガス溶存純水を生
成するための炭酸ガス溶解部4を備え、さらに、その炭
酸ガス溶解部4で生成された炭酸ガス溶存純水を基板処
理ユニット2に供給する際に、その炭酸ガス溶存純水の
一部を取り出すための分岐部9が設けられている。The supply pipe 3 is provided with a carbon dioxide gas dissolving section 4 for producing carbon dioxide dissolved pure water in which carbon dioxide is dissolved in pure water fed from a pure water supply source. When supplying the carbon dioxide-dissolved pure water generated in the gas dissolving section 4 to the substrate processing unit 2, a branch section 9 is provided for extracting a part of the carbon dioxide-dissolved pure water.
【0020】炭酸ガス溶解部4は、供給管3に略一体的
に形成されており、供給管3を流通する純水を、炭酸ガ
ス溶解部4に備える浸透部40を通過させることで、炭
酸ガスを溶解させた炭酸ガス溶存純水を生成するもので
ある。さらに、炭酸ガス溶解部4には、浸透部40に炭
酸ガスを供給するためのガス供給部41と、その供給さ
れた炭酸ガスや浸透部40で発生した水蒸気等を排気す
るためのガス排気部42とが形成されている。ガス供給
部41には、所定流量の炭酸ガスを供給するための炭酸
ガス供給量調整部10が接続されている。なお、炭酸ガ
ス溶解部4は本発明における炭酸ガス溶存純水生成手段
に、炭酸ガス供給量調整部10は本発明における調整手
段に、それぞれ相当する。The carbon dioxide gas dissolving section 4 is formed substantially integrally with the supply pipe 3. Pure water flowing through the supply pipe 3 is passed through the permeation section 40 provided in the carbon dioxide gas dissolving section 4, so that the carbon dioxide is dissolved. It produces carbon dioxide dissolved pure water in which gas is dissolved. Further, the carbon dioxide dissolving section 4 includes a gas supply section 41 for supplying carbon dioxide gas to the permeation section 40 and a gas exhaust section for exhausting the supplied carbon dioxide gas and water vapor generated in the permeation section 40. 42 are formed. The gas supply unit 41 is connected to a carbon dioxide gas supply amount adjusting unit 10 for supplying a predetermined flow rate of carbon dioxide gas. The carbon dioxide gas dissolving unit 4 corresponds to the carbon dioxide dissolved pure water generating means of the present invention, and the carbon dioxide gas supply amount adjusting unit 10 corresponds to the adjusting means of the present invention.
【0021】ガス供給部41から浸透部40へ供給され
る炭酸ガスは、基板処理装置が配備された工場内に設置
された炭酸ガス供給源から送られてくるものである。ま
た、炭酸ガス供給源から送られてくる炭酸ガスは、レギ
ュレターを介することで、略一定の供給量で炭酸ガス供
給量調整部10に送られる。さらに、ガス供給部41に
供給する炭酸ガスの供給量は、炭酸ガス供給量調整部1
0によって調整される。The carbon dioxide gas supplied from the gas supply unit 41 to the permeation unit 40 is sent from a carbon dioxide gas supply source installed in a factory where the substrate processing apparatus is installed. Further, the carbon dioxide gas sent from the carbon dioxide gas supply source is sent to the carbon dioxide gas supply amount adjusting unit 10 at a substantially constant supply amount via the regulator. Further, the supply amount of carbon dioxide gas supplied to the gas supply unit 41 is controlled by the carbon dioxide supply amount adjustment unit 1.
Adjusted by 0.
【0022】炭酸ガス供給量調整部10は、複数個(図
では3個)の開閉弁11a〜11cと、開閉弁の個数に
対応する個数(図では3個)の抵抗フィルタ12a〜1
2cとで構成される。開閉弁11a〜11cは、その開
閉を制御部7によって制御されるものである。抵抗フィ
ルタ12a〜12cは、それぞれ異なる圧力損失値をも
っており、各抵抗フィルタ12a〜12cを通過する炭
酸ガス量は、レギュレターの設定値と各抵抗フィルタ1
2a〜12cの各圧力損失値で決定される。炭酸ガス供
給量調整部10から全体として流出する炭酸ガスの量
は、開放される開閉弁11a〜11cの組合せによって
決まる。The carbon dioxide supply amount adjusting unit 10 includes a plurality of (three in the figure) on-off valves 11a to 11c and a number (three in the figure) of resistance filters 12a to 1 corresponding to the number of on-off valves.
2c. The on-off valves 11a to 11c are controlled by the control unit 7 to open and close. The resistance filters 12a to 12c have different pressure loss values, and the amount of carbon dioxide gas passing through each of the resistance filters 12a to 12c depends on the set value of the regulator and the resistance filter 1
It is determined by each pressure loss value of 2a to 12c. The amount of carbon dioxide gas flowing out of the carbon dioxide supply amount adjusting unit 10 as a whole is determined by the combination of the open / close valves 11a to 11c that are opened.
【0023】具体的には、抵抗フィルタ12aを通過し
た炭酸ガスの流量を10Nl/min(又はSCC
M)、抵抗フィルタ12bを通過した炭酸ガスの流量を
20Nl/min(又はSCCM)、抵抗フィルタ12
cを通過した炭酸ガスの流量を40Nl/min(又は
SCCM)とする場合、上述した開閉弁11a〜11c
の開閉の組合せによって、ガス供給部41に対する炭酸
ガス供給量は、0〜70Nl/min(又はSCCM)
の範囲で変化させることができる。なお、この実施例で
は、ガス供給部41に対する供給流量を、3つの開閉弁
11a〜11cと、3つの抵抗フィルタ12a〜12c
によって決定したが、これに限定されるものではなく、
必要個数の開閉弁および抵抗フィルタを適宜設けること
ができる。Specifically, the flow rate of carbon dioxide gas passing through the resistance filter 12a is set to 10 Nl / min (or SCC
M), the flow rate of the carbon dioxide gas passing through the resistance filter 12b is set to 20 Nl / min (or SCCM),
When the flow rate of the carbon dioxide gas passing through c is 40 Nl / min (or SCCM), the above-described on-off valves 11 a to 11 c
The supply amount of carbon dioxide to the gas supply unit 41 is 0 to 70 Nl / min (or SCCM) depending on the combination of opening and closing.
Can be changed within the range. In this embodiment, the supply flow rate to the gas supply unit 41 is controlled by three on-off valves 11a to 11c and three resistance filters 12a to 12c.
, But is not limited to this.
The required number of on-off valves and resistance filters can be provided as appropriate.
【0024】したがって、開閉弁11a〜11cを開放
する組合わせによって、ガス供給部41に供給する炭酸
ガス量を任意に決定することができる。炭酸ガス供給量
調整部10によって流量調整された炭酸ガスは、炭酸ガ
ス溶解部4のガス供給部41から浸透部40へ供給され
る。Therefore, the amount of carbon dioxide supplied to the gas supply unit 41 can be arbitrarily determined by the combination of opening the on-off valves 11a to 11c. The carbon dioxide gas whose flow rate has been adjusted by the carbon dioxide gas supply amount adjusting unit 10 is supplied from the gas supply unit 41 of the carbon dioxide gas dissolving unit 4 to the permeation unit 40.
【0025】浸透部40は、炭酸ガス(二酸化炭素)に
対して透過性を有する複数本の中空糸膜が束ねられて構
成されている。浸透部40の各中空糸には、水分子を透
過させることなく気体分子のみを透過させる無数の孔が
形成されている。ガス供給部41に供給される炭酸ガス
は各中空糸膜の気室に供給され、その炭酸ガスは中空糸
の気室の壁面を浸透して、その外側の流壁面で接してい
る純水に溶解する。したがって、浸透部40の各中空糸
液室を純水が通過することで、その純水に炭酸ガスが溶
解された炭酸ガス溶存純水が生成される。なお、各中空
糸膜の気室内を流れる炭酸ガスの流量によって、純水中
に溶け込む炭酸ガスの量が変化するので、供給流量によ
って純水に溶解される炭酸ガスの溶解量を変化させるこ
とができる。つまり、炭酸ガス供給量調整部10によっ
て調整される流量に応じて、純水に溶解される炭酸ガス
の溶解量を変化させることができる。The permeation section 40 is formed by bundling a plurality of hollow fiber membranes having permeability to carbon dioxide (carbon dioxide). Each hollow fiber of the permeation part 40 is formed with countless holes that allow only gas molecules to permeate without allowing water molecules to permeate. The carbon dioxide gas supplied to the gas supply unit 41 is supplied to the air chamber of each hollow fiber membrane, and the carbon dioxide gas penetrates the wall surface of the air chamber of the hollow fiber and contacts the pure water in contact with the outer flow wall surface. Dissolve. Therefore, when pure water passes through each hollow fiber liquid chamber of the permeation section 40, carbon dioxide dissolved pure water in which carbon dioxide is dissolved in the pure water is generated. Since the amount of carbon dioxide dissolved in pure water changes according to the flow rate of carbon dioxide flowing in the air chamber of each hollow fiber membrane, the amount of carbon dioxide dissolved in pure water can be changed by the supply flow rate. it can. That is, the amount of dissolved carbon dioxide dissolved in pure water can be changed in accordance with the flow rate adjusted by the carbon dioxide supply amount adjuster 10.
【0026】また、炭酸ガス供給量調整部10から浸透
部40の間を結ぶ炭酸ガスの流通路には、その流通路か
ら分岐して、その間の炭酸ガスを排気するための排気弁
13が設けられている。その排気弁13の開閉は制御部
7によって制御されるものであり通常の使用状態では閉
じられているが、例えば、炭酸ガス溶存純水の比抵抗値
が低くなりすぎた場合には、制御部7が開閉弁11a〜
11cを閉じるとともに、排気弁13を開放すること
で、中空糸膜の気室に供給される炭酸ガスを止める。こ
れにより、浸透部40を通過する純水には、それ以上の
炭酸ガスが溶解しないので、炭酸ガス溶存純水の比抵抗
値の低下を防ぐ。An exhaust valve 13 is provided in the carbon dioxide gas flow passage connecting the carbon dioxide gas supply amount adjusting unit 10 and the permeation unit 40 to branch off from the flow passage and exhaust the carbon dioxide gas therebetween. Have been. The opening and closing of the exhaust valve 13 is controlled by the control unit 7 and is closed in a normal use state. For example, if the specific resistance value of the carbon dioxide dissolved pure water becomes too low, the control unit 7 7 is an on-off valve 11a-
By closing 11c and opening the exhaust valve 13, carbon dioxide gas supplied to the air chamber of the hollow fiber membrane is stopped. Thereby, since the carbon dioxide gas no more dissolves in the pure water passing through the permeation section 40, a decrease in the specific resistance value of the carbon dioxide dissolved pure water is prevented.
【0027】炭酸ガス溶解部4で炭酸ガスが溶解された
炭酸ガス溶存純水は、供給管3を通じて基板処理ユニッ
ト2に送られる。これと同時に、供給管3に設けられた
分岐部9は、基板処理ユニット2に送られる炭酸ガス溶
存純水の一部を取り出す。The carbon dioxide gas-dissolved pure water in which the carbon dioxide gas is dissolved in the carbon dioxide gas dissolving section 4 is sent to the substrate processing unit 2 through the supply pipe 3. At the same time, the branch portion 9 provided in the supply pipe 3 takes out a part of the carbon dioxide dissolved pure water sent to the substrate processing unit 2.
【0028】分岐部9は、供給管3の炭酸ガス溶解部4
と基板処理ユニット2との間において分岐管5の一端側
が連通接続されて構成される。分岐管5は、供給管3の
口径よりも小さな口径で形成されており、供給管3内に
流れる炭酸ガス溶存純水の一部を取り出す。なお、分岐
管5は、必ずしも供給管3の口径よりも小さくする場合
に限定するものではない。The branch section 9 is provided with a carbon dioxide gas dissolving section 4 of the supply pipe 3.
One end side of the branch pipe 5 is connected and connected between the substrate processing unit 2. The branch pipe 5 is formed with a smaller diameter than the supply pipe 3, and takes out a part of the carbon dioxide dissolved pure water flowing in the supply pipe 3. Note that the branch pipe 5 is not necessarily limited to the case where the diameter is smaller than the diameter of the supply pipe 3.
【0029】分岐管5は、一端側が供給管3に連通接続
されており、他端側は炭酸ガス溶存純水を廃液するため
の図示しない廃液管に接続されている。さらに、分岐管
5の途中には、分岐管5内を廃液管に向かって流れる炭
酸ガス溶存純水の比抵抗値を測定するための比抵抗計8
の測定部である電極6が分岐管5内に取り付けられてい
る。The branch pipe 5 has one end connected to the supply pipe 3 and the other end connected to a waste liquid pipe (not shown) for draining carbon dioxide dissolved pure water. Further, in the middle of the branch pipe 5, a resistivity meter 8 for measuring the specific resistance value of the carbon dioxide dissolved pure water flowing toward the waste liquid pipe in the branch pipe 5 is provided.
The electrode 6 which is a measuring unit is mounted in the branch pipe 5.
【0030】分岐部9で取り出された炭酸ガス溶存純水
は、分岐管5内を廃液管に向かって流れ、比抵抗計8の
電極6を通過する。このとき、比抵抗計8の電極6で炭
酸ガス溶存純水の比抵抗値が測定される。比抵抗値が測
定された炭酸ガス溶存純水、すなわち電極6から溶出し
た金属イオンが含まれる炭酸ガス溶存純水は、分岐管5
の他端側から廃液管を通じて廃液される。つまり、炭酸
ガス溶存純水の比抵抗値は測定するが、比抵抗計8の電
極6に触れた炭酸ガス溶存純水は基板処理ユニット2に
は供給されない。The carbon dioxide-dissolved pure water taken out at the branch 9 flows through the branch pipe 5 toward the waste liquid pipe, and passes through the electrode 6 of the resistivity meter 8. At this time, the specific resistance of the carbon dioxide dissolved pure water is measured by the electrode 6 of the specific resistance meter 8. The carbon dioxide gas-dissolved pure water whose specific resistance was measured, that is, the carbon dioxide gas-dissolved pure water containing metal ions eluted from the electrode 6, is supplied to the branch pipe 5.
From the other end through a waste liquid pipe. That is, although the specific resistance of the carbon dioxide dissolved pure water is measured, the carbon dioxide dissolved pure water touching the electrode 6 of the resistivity meter 8 is not supplied to the substrate processing unit 2.
【0031】比抵抗計8は、電極6によって分岐管5内
を流れる炭酸ガス溶存純水の比抵抗値を測定する。測定
して得られた比抵抗値を制御部7に送る。The resistivity meter 8 measures the resistivity of the carbon dioxide-dissolved pure water flowing through the branch pipe 5 through the electrode 6. The measured specific resistance value is sent to the control unit 7.
【0032】制御部7は、CPUやメモリなどで構成さ
れる、いわゆるコンピュータであり、上述した排気弁1
3や、炭酸ガス供給量調整部10の開閉弁11a〜11
cを開閉するものである。制御部7は、比抵抗計8で得
られた比抵抗値が予め決められた設定比抵抗値を保つよ
うに、炭酸ガス溶解部4の浸透部10に供給される炭酸
ガスの供給量を制御するものである。なお、制御部7
は、本発明における制御手段に相当する。The control unit 7 is a so-called computer comprising a CPU, a memory, and the like.
3, the on-off valves 11a to 11 of the carbon dioxide gas supply amount adjusting unit 10
open and close c. The control unit 7 controls the supply amount of the carbon dioxide gas supplied to the permeation unit 10 of the carbon dioxide gas dissolving unit 4 so that the specific resistance value obtained by the specific resistance meter 8 maintains a predetermined set specific resistance value. Is what you do. The control unit 7
Corresponds to the control means in the present invention.
【0033】例えば、制御部7は、比抵抗計8の比抵抗
値を常時監視して、基板処理ユニット2に供給される炭
酸ガス溶存純水の比抵抗値を設定比抵抗値に一定に保つ
ように、炭酸ガス供給量調整部10を制御する。具体的
には、炭酸ガス溶存純水の比抵抗値が設定比抵抗値より
も下がった場合には、純水に溶解する炭酸ガスの溶解量
を減らすために、炭酸ガス供給量調整部10の開閉弁1
1a〜11cの開閉および排気弁13を制御して、浸透
部40対する炭酸ガスの供給量を減らす。一方、炭酸ガ
ス溶存純水の比抵抗値が設定比抵抗値よりも上がった場
合には、純水に溶解する炭酸ガスの溶解量を増やすため
に、上記と逆に開閉弁11a〜11cを制御して、浸透
部40に供給する炭酸ガスの供給量を増やすように調整
する。即ち、浸透部40に供給される炭酸ガスの供給量
が増えると、純水に溶解される炭酸ガスの溶解量が多く
なり、炭酸ガス溶存純水の比抵抗値が下がる。一方、炭
酸ガスの供給量が減ると、純水に溶解される炭酸ガスの
溶解量が少なくなり、炭酸ガス溶存純水の比抵抗値が上
がる。For example, the control unit 7 constantly monitors the specific resistance value of the specific resistance meter 8 and keeps the specific resistance value of the carbon dioxide-dissolved pure water supplied to the substrate processing unit 2 constant at the set specific resistance value. Thus, the carbon dioxide gas supply amount adjusting unit 10 is controlled. Specifically, when the specific resistance value of the carbon dioxide-dissolved pure water falls below the set specific resistance value, the carbon dioxide gas supply amount adjusting unit 10 is used to reduce the amount of carbon dioxide dissolved in the pure water. On-off valve 1
The opening and closing of 1a to 11c and the exhaust valve 13 are controlled to reduce the supply amount of carbon dioxide to the permeation section 40. On the other hand, when the specific resistance of the carbon dioxide-dissolved pure water is higher than the set specific resistance, the on-off valves 11a to 11c are controlled conversely to increase the amount of carbon dioxide dissolved in the pure water. Then, adjustment is performed so as to increase the supply amount of carbon dioxide gas supplied to the permeation section 40. That is, when the supply amount of the carbon dioxide gas supplied to the infiltration unit 40 increases, the amount of the carbon dioxide dissolved in the pure water increases, and the specific resistance of the carbon dioxide dissolved pure water decreases. On the other hand, when the supply amount of the carbon dioxide gas decreases, the amount of the carbon dioxide gas dissolved in the pure water decreases, and the specific resistance of the carbon dioxide dissolved pure water increases.
【0034】炭酸ガス溶存純水供給ユニット1は、比抵
抗値を略一定に保った炭酸ガス溶存純水を基板処理ユニ
ット2に供給する。基板処理ユニット2は、例えば薬液
などで処理された基板の洗浄処理を行なったり、レジス
ト塗布などの処理前後の基板にリンス処理を行なう処理
部を備えて構成されるものである。基板処理ユニット2
では、炭酸ガス溶存純水供給ユニット1から供給された
炭酸ガス溶存純水を利用して、洗浄処理等を行なう。こ
れにより、基板処置ユニット2で発生する、純水の帯電
による静電破壊や、金属イオンによる金属汚染等を防止
することができる。なお、基板処理ユニット2は、半導
体基板、ガラス基板等に対して純水を用いて処理を施す
過程または処理部を備える装置である。The carbon dioxide-dissolved pure water supply unit 1 supplies the carbon dioxide-dissolved pure water to the substrate processing unit 2 while keeping the specific resistance value substantially constant. The substrate processing unit 2 includes a processing unit that performs a cleaning process on a substrate that has been processed with, for example, a chemical solution, or performs a rinsing process on a substrate before and after a process such as resist coating. Substrate processing unit 2
Then, a cleaning process or the like is performed using the carbon dioxide dissolved pure water supplied from the carbon dioxide dissolved pure water supply unit 1. Thereby, it is possible to prevent electrostatic destruction due to electrification of pure water and metal contamination due to metal ions, which are generated in the substrate treatment unit 2. Note that the substrate processing unit 2 is an apparatus including a process or a processing unit for performing processing on a semiconductor substrate, a glass substrate, or the like using pure water.
【0035】上述した基板処理装置によれば、炭酸ガス
溶存純水供給ユニット1では、炭酸ガス溶存純水の比抵
抗値を測定するために、基板処理ユニット2に供給する
炭酸ガス溶存純水の一部を取り出すことで、比抵抗値を
測定する炭酸ガス溶存純水と、基板処理ユニット2に供
給する炭酸ガス溶存純水とを分けている。したがって、
基板処理ユニット2に供給される炭酸ガス溶存純水は、
その比抵抗値が最適な値に調整されている一方で、比抵
抗値の測定に起因する金属イオンが含まれていない。そ
の結果、基板に炭酸ガス溶存純水を利用して行なわれる
処理において、帯電や金属汚染などの悪影響の発生を防
止することができる。According to the substrate processing apparatus described above, in the carbon dioxide-dissolved pure water supply unit 1, the carbon dioxide-dissolved pure water supplied to the substrate processing unit 2 is measured in order to measure the specific resistance of the carbon dioxide-dissolved pure water. By taking out a part, carbon dioxide-dissolved pure water for measuring a specific resistance value is separated from carbon dioxide-dissolved pure water to be supplied to the substrate processing unit 2. Therefore,
The carbon dioxide dissolved pure water supplied to the substrate processing unit 2 is:
While the specific resistance is adjusted to an optimum value, metal ions resulting from the measurement of the specific resistance are not included. As a result, it is possible to prevent the occurrence of adverse effects such as charging and metal contamination in the processing performed using carbon dioxide dissolved pure water on the substrate.
【0036】本発明は、次のように変形実施することも
可能である。 (1)上述した実施例では、制御部7によって炭酸ガス
溶解部4で純水に溶解させる炭酸ガスの溶解量を制御し
たが、例えば制御部7を用いることなく、炭酸ガス溶存
純水供給ユニット1を次のように構成することもでき
る。図2は、この変形例に係る基板処理装置のブロック
図である。上述した実施例と共通する部分については、
同一符号を付し、その説明を省略する。The present invention can be modified as follows. (1) In the above-described embodiment, the control unit 7 controls the amount of dissolved carbon dioxide dissolved in pure water in the carbon dioxide gas dissolving unit 4, but, for example, without using the control unit 7, the carbon dioxide dissolved pure water supply unit is used. 1 can also be configured as follows. FIG. 2 is a block diagram of a substrate processing apparatus according to this modification. About the part common to the above-mentioned example,
The same reference numerals are given and the description is omitted.
【0037】図2に示すように、炭酸ガス溶存純水供給
ユニット1の供給管3には、分岐部9の上手側にオリフ
ィス51が設けられており、さらに、このオリフィス5
1を迂回するような迂回管50が設けられている。迂回
管50には、その管内を流れる純水に炭酸ガスを溶解す
る炭酸ガス溶解部4が設けられている。この炭酸ガス溶
解部4の浸透部40には、炭酸ガス供給源から送られる
比較的多い流量の炭酸ガスが供給されており、この浸透
部40を通過する純水には略飽和状態の炭酸ガスが溶解
される。つまり、浸透部40を通過する純水は、略飽和
状態の炭酸ガスが溶解されて、略一定の比抵抗値を持っ
た炭酸ガス溶存純水となる。なお、この炭酸ガス溶解部
4には、ガス排気部42は設けられていない。As shown in FIG. 2, the supply pipe 3 of the carbon dioxide dissolved pure water supply unit 1 is provided with an orifice 51 on the upstream side of the branch portion 9.
A bypass pipe 50 that bypasses 1 is provided. The bypass pipe 50 is provided with a carbon dioxide gas dissolving unit 4 for dissolving carbon dioxide in pure water flowing through the pipe. A relatively large flow rate of carbon dioxide gas supplied from a carbon dioxide gas supply source is supplied to the permeation section 40 of the carbon dioxide gas dissolving section 4, and pure water passing through the permeation section 40 contains substantially saturated carbon dioxide gas. Is dissolved. In other words, the pure water passing through the permeation section 40 is dissolved in the substantially saturated carbon dioxide gas, and becomes pure carbon dioxide dissolved pure water having a substantially constant specific resistance value. The carbon dioxide dissolving unit 4 is not provided with the gas exhaust unit 42.
【0038】純水供給源から供給された純水は、オリフ
ィス51によって、その前後で圧力差が生じる。具体的
には、供給管3と迂回管50との接続部である分流部P
1 と、合流部P2 とで、P1 >P2 となる圧力差が生じ
る。これにより、この供給管3内の圧力差を補うよう
に、純水は、迂回管50内を分流部P1 から合流部P2
へ向かって流れる。迂回管50に設けられた炭酸ガス溶
解部4は、迂回管50内を流れる純水に略飽和状態にな
る量の炭酸ガスを溶解させて、高濃度の炭酸ガス溶存純
水、即ち比較的比抵抗値の低い炭酸ガス溶存純水を生成
する。この低比抵抗値の炭酸ガス溶存純水は、合流部P
2 でオリフィス51を通過してきた純水と混合されて、
所定の比抵抗値の炭酸ガス溶存純水が生成される。な
お、オリフィス51の前後で生じる圧力差を変化させる
ことで、基板処理ユニット2に供給する炭酸ガス溶存純
水の比抵抗値を適宜変化させることもできる。また、例
えばオリフィス51の絞り量を調整することで、圧力差
を変化させることができる。The pure water supplied from the pure water supply source causes a pressure difference between before and after the orifice 51. Specifically, a branching section P which is a connection section between the supply pipe 3 and the bypass pipe 50
A pressure difference of P 1 > P 2 is generated between 1 and the junction P 2 . Accordingly, to compensate for the pressure difference between the supply pipe 3, pure water, merges inside the bypass pipe 50 from the diverter P 1 part P 2
Flows towards The carbon dioxide gas dissolving section 4 provided in the bypass pipe 50 dissolves a substantially saturated amount of carbon dioxide in the pure water flowing in the bypass pipe 50, and provides a high-concentration carbon dioxide-dissolved pure water, that is, a relatively specific solution. Generates carbon dioxide dissolved pure water with low resistance. The low specific resistance carbon dioxide-dissolved pure water is supplied to the junction P
In 2 mixed with pure water that has passed through the orifice 51,
Carbon dioxide dissolved pure water having a predetermined specific resistance value is generated. The specific resistance of the carbon dioxide-dissolved pure water supplied to the substrate processing unit 2 can be appropriately changed by changing the pressure difference generated before and after the orifice 51. Further, for example, by adjusting the throttle amount of the orifice 51, the pressure difference can be changed.
【0039】所定の比抵抗値となった炭酸ガス溶存純水
は、基板処理ユニット2に供給されるとともに、比抵抗
計8によってその比抵抗値が測定される。比抵抗計8
は、例えば、測定した炭酸ガス溶存純水の比抵抗値を表
示したり、所定の比抵抗値の範囲を越えた場合には警報
を発したりする。The carbon dioxide dissolved pure water having a predetermined specific resistance value is supplied to the substrate processing unit 2 and its specific resistance value is measured by the specific resistance meter 8. Resistivity meter 8
Displays, for example, the measured specific resistance value of the carbon dioxide dissolved pure water, or issues an alarm when the specific resistance value exceeds a predetermined range.
【0040】したがって、この変形例によれば、いわゆ
る分圧の法則を利用することにより、基板処理ユニット
に供給する炭酸ガス溶存純水を所定の比抵抗値としてい
るので、炭酸ガス溶存純水供給ユニット1の構成をより
簡略化することができる。つまり、炭酸ガスの比抵抗値
が基板処理において直ちに悪影響を及ぼさないような場
合には、上述した実施例のように制御部7によって特に
制御を施さなくても、炭酸ガス溶存純水の比抵抗値が所
定の値から外れた場合に例えば警報を発することで、そ
の異常をオペレータに知らせるだけの構成にすることも
できる。Therefore, according to this modification, since the carbon dioxide-dissolved pure water supplied to the substrate processing unit has a predetermined specific resistance value by utilizing the law of partial pressure, the carbon dioxide-dissolved pure water supply The configuration of the unit 1 can be further simplified. That is, in the case where the specific resistance value of the carbon dioxide gas does not immediately affect the substrate processing, the specific resistance of the carbon dioxide dissolved pure water can be obtained without any special control by the control unit 7 as in the above-described embodiment. When the value deviates from the predetermined value, for example, an alarm may be issued to inform the operator of the abnormality.
【0041】(2)上述した実施例では、浸透部40に
供給する炭酸ガスの流量を、抵抗フィルタと開閉バルブ
との組合せによって制御したが、例えば、マスフローコ
ントローラによって制御することもできる。(2) In the above embodiment, the flow rate of the carbon dioxide gas supplied to the permeation section 40 is controlled by the combination of the resistance filter and the opening / closing valve. However, the flow rate can be controlled by, for example, a mass flow controller.
【0042】(3)上述した実施例では、比抵抗値を測
定した炭酸ガス溶存純水、即ち電極6から溶出した金属
イオンを含む炭酸ガス溶存純水を廃液したが、例えば、
金属イオンを取り除くことにより純水に再生するような
構成にしてもよい。(3) In the above-described embodiment, carbon dioxide-dissolved pure water whose specific resistance was measured, that is, carbon dioxide-dissolved pure water containing metal ions eluted from the electrode 6 was discarded.
It may be configured to regenerate into pure water by removing metal ions.
【0043】(4)上述した基板処理装置では、炭酸ガ
ス溶存純水供給ユニット1と、基板処理ユニット2とを
備えて構成されるものとして説明したが、各ユニットを
それぞれ単体装置として利用することもできる。例え
ば、基板処理ユニット2を基板搬送機構、基板処理機構
等を備えた基板処理装置をとして、炭酸ガス溶存純水供
給ユニット1を単体装置として利用することもできる。(4) In the above-described substrate processing apparatus, it has been described that the substrate processing apparatus is provided with the carbon dioxide-dissolved pure water supply unit 1 and the substrate processing unit 2, but each unit is used as a single unit. Can also. For example, the substrate processing unit 2 may be used as a substrate processing apparatus provided with a substrate transport mechanism, a substrate processing mechanism, and the like, and the carbon dioxide dissolved pure water supply unit 1 may be used as a single device.
【0044】(5)上述した実施例では、供給管3内を
流通する炭酸ガス溶存純水を分岐管5によって分岐させ
ることで、基板処理装置に供給される炭酸ガス溶存純水
の一部を常に取り出すように構成したが、本発明はこれ
に限定されるものではなく、例えば、分岐管5に開閉弁
を取り付けて、この開閉弁を開閉させることで、比抵抗
値を測定する場合にだけ、基板処理ユニット2に供給さ
れる炭酸ガス溶存純水を取り出すように構成することも
できる。(5) In the above-described embodiment, the carbon dioxide dissolved pure water flowing through the supply pipe 3 is branched by the branch pipe 5, so that a part of the carbon dioxide dissolved pure water supplied to the substrate processing apparatus is removed. Although it was configured to always take out, the present invention is not limited to this. For example, only when a specific resistance value is measured by attaching an on-off valve to the branch pipe 5 and opening and closing this on-off valve. Alternatively, it may be configured such that carbon dioxide dissolved pure water supplied to the substrate processing unit 2 is taken out.
【0045】[0045]
【発明の効果】以上の説明から明らかなように、本発明
によれば、次の効果を奏する。すなわち、請求項1に記
載の発明によれば、生成された炭酸ガス溶存純水の比抵
抗値を測定する際に、基板処理装置に供給する炭酸ガス
溶存純水と、比抵抗値を測定するための炭酸ガス溶存純
水とに分岐させているので、比抵抗計に起因する金属イ
オンを含んで汚染された炭酸ガス溶存純水を基板処理装
置に供給するのを防止することができる。As apparent from the above description, the present invention has the following effects. That is, according to the first aspect of the present invention, when measuring the specific resistance value of the generated carbon dioxide gas-dissolved pure water, the carbon dioxide gas-dissolved pure water supplied to the substrate processing apparatus and the specific resistance value are measured. Therefore, it is possible to prevent supply of the carbon dioxide-dissolved pure water contaminated with metal ions due to the resistivity meter to the substrate processing apparatus.
【0046】請求項2に記載の発明によれば、請求項1
に記載の方法発明を好適に実施することができる。According to the invention described in claim 2, according to claim 1
Can be suitably implemented.
【0047】請求項3に記載の発明によれば、さらに、
純水に溶解させる炭酸ガスの溶解量を調整するので、任
意の比抵抗値の炭酸ガス溶存純水を基板処理装置に供給
することができる。According to the third aspect of the present invention, further,
Since the amount of carbon dioxide dissolved in pure water is adjusted, carbon dioxide-dissolved pure water having an arbitrary specific resistance value can be supplied to the substrate processing apparatus.
【0048】請求項4に記載の発明によれば、さらに、
炭酸ガス溶存純水の比抵抗値の変化に応じて、純水に溶
解させる炭酸ガスの溶解量を調整するように調整手段を
制御するので、常に最適な比抵抗値に調整された炭酸ガ
ス溶存純水を基板処理装置に供給することができる。According to the fourth aspect of the present invention,
The adjusting means is controlled so as to adjust the amount of carbon dioxide dissolved in pure water in accordance with the change in the specific resistance of the carbon dioxide-dissolved pure water. Pure water can be supplied to the substrate processing apparatus.
【0049】請求項5に記載の発明によれば、請求項2
ないし請求項4のいずれかに記載の発明で説明した効果
が得られる炭酸ガス溶存純水供給ユニットを備えた基板
処理装置を実現することができるので、基板処理におけ
る比抵抗計に起因する金属イオンの悪影響を排除するこ
とができる。According to the invention set forth in claim 5, according to claim 2,
In addition, it is possible to realize a substrate processing apparatus provided with a carbon dioxide-dissolved pure water supply unit that can achieve the effects described in the invention according to any one of claims 4 to 7, so that metal ions caused by a resistivity meter in substrate processing can be realized. Adverse effects can be eliminated.
【図1】実施例の基板処理装置の概略を示すブロック図
である。FIG. 1 is a block diagram schematically illustrating a substrate processing apparatus according to an embodiment.
【図2】変形例の基板処理装置の概略を示すブロック図
である。FIG. 2 is a block diagram schematically illustrating a substrate processing apparatus according to a modification.
1 … 炭酸ガス溶存純水供給ユニット 2 … 基板処理ユニット 3 … 供給管 4 … 炭酸ガス溶解部 5 … 分岐管 6 … 電極 7 … 制御部 8 … 比抵抗計 9 … 分岐部 10 … 炭酸ガス供給量調整部 40 … 浸透部 DESCRIPTION OF SYMBOLS 1 ... Carbon dioxide dissolved pure water supply unit 2 ... Substrate processing unit 3 ... Supply pipe 4 ... Carbon dioxide gas dissolution part 5 ... Branch pipe 6 ... Electrode 7 ... Control part 8 ... Resistivity meter 9 ... Branch part 10 ... Carbon dioxide gas supply amount Adjusting part 40… Penetration part
Claims (5)
溶存純水を生成するとともに、比抵抗計によって比抵抗
値が測定された前記炭酸ガス溶存純水を基板処理装置に
供給する炭酸ガス溶存純水供給方法であって、 前記純水内に炭酸ガスを溶解させて炭酸ガス溶存純水を
生成する過程と、 前記炭酸ガス溶存純水を前記基板処理装置に供給する過
程と、 前記基板処理装置に供給される炭酸ガス溶存純水の一部
を取り出す過程と、 前記取り出された炭酸ガス溶存純水の比抵抗値を前記比
抵抗計によって測定する過程とを備えたことを特徴とす
る炭酸ガス溶存純水供給方法。1. A method for producing carbon dioxide gas-dissolved pure water in which carbon dioxide gas is dissolved in pure water, and for supplying carbon dioxide gas-dissolved pure water whose specific resistance is measured by a resistivity meter to a substrate processing apparatus. A method for supplying gas-dissolved pure water, comprising: dissolving carbon dioxide in the pure water to generate carbon dioxide-dissolved pure water; supplying the carbon dioxide-dissolved pure water to the substrate processing apparatus; A step of extracting a part of the carbon dioxide dissolved pure water supplied to the substrate processing apparatus, and a step of measuring a specific resistance value of the extracted carbon dioxide dissolved pure water by the resistivity meter. Carbon dioxide dissolved pure water supply method.
溶存純水を生成するとともに、比抵抗計によって比抵抗
値が測定された前記炭酸ガス溶存純水を基板処理装置に
供給する炭酸ガス溶存純水供給ユニットであって、 前記純水内に炭酸ガスを溶解させて炭酸ガス溶存純水を
生成する炭酸ガス溶存純水生成手段と、 前記炭酸ガス溶存純水生成手段で生成された炭酸ガス溶
存純水を前記基板処理装置に供給する供給管と、 前記供給管によって前記基板処理装置に供給される前記
炭酸ガス溶存純水の一部を分岐して取り出す分岐管と、 前記分岐管に取り付けられて前記炭酸ガス溶存純水の比
抵抗値を測定する比抵抗計とを備えたことを特徴とする
炭酸ガス溶存純水供給ユニット。2. A method for producing carbon dioxide gas-dissolved pure water in which carbon dioxide gas is dissolved in pure water, and for supplying the carbon dioxide gas-dissolved pure water, whose specific resistance is measured by a resistivity meter, to a substrate processing apparatus. A gas-dissolved pure water supply unit, wherein the carbon dioxide gas is dissolved in the pure water to generate carbon dioxide-dissolved pure water; A supply pipe for supplying carbon dioxide-dissolved pure water to the substrate processing apparatus; a branch pipe for branching out a part of the carbon dioxide-dissolved pure water supplied to the substrate processing apparatus by the supply pipe; and the branch pipe And a specific resistance meter attached to the unit for measuring a specific resistance value of the carbon dioxide dissolved pure water.
ユニットにおいて、前記ユニットは、さらに、 前記炭酸ガス溶存純水生成手段において純水に溶解させ
る炭酸ガスの溶解量を調整する調整手段を備える炭酸ガ
ス溶存純水供給ユニット。3. The carbon dioxide-dissolved pure water supply unit according to claim 2, wherein the unit further adjusts a dissolved amount of the carbon dioxide dissolved in the pure water in the carbon dioxide-dissolved pure water generating unit. A carbon dioxide dissolved pure water supply unit comprising:
ユニットにおいて、前記ユニットは、さらに、 前記比抵抗計で測定して得られる比抵抗値に応じて、前
記調整手段を制御する制御手段を備える炭酸ガス溶存純
水供給ユニット。4. The carbon dioxide dissolved pure water supply unit according to claim 3, wherein the unit further controls the adjusting means in accordance with a specific resistance value obtained by measuring with the specific resistance meter. Carbon dioxide dissolved pure water supply unit provided with means.
載の炭酸ガス溶存純水供給ユニットを備えることを特徴
とする基板処理装置。5. A substrate processing apparatus comprising the carbon dioxide-dissolved pure water supply unit according to claim 2. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10249783A JP2000070887A (en) | 1998-09-03 | 1998-09-03 | Supply of pure water containing carbon dioxide gas dissolved therein, unit for supplying pure water containing carbon dioxide gas dissolved therein, and substrate processing apparatus equipped with the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10249783A JP2000070887A (en) | 1998-09-03 | 1998-09-03 | Supply of pure water containing carbon dioxide gas dissolved therein, unit for supplying pure water containing carbon dioxide gas dissolved therein, and substrate processing apparatus equipped with the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000070887A true JP2000070887A (en) | 2000-03-07 |
Family
ID=17198172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10249783A Pending JP2000070887A (en) | 1998-09-03 | 1998-09-03 | Supply of pure water containing carbon dioxide gas dissolved therein, unit for supplying pure water containing carbon dioxide gas dissolved therein, and substrate processing apparatus equipped with the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000070887A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020093397A (en) * | 2001-06-08 | 2002-12-16 | (주)보명하이텍 | Apparatus annexing carbon dioxide to deionizer water |
| JP2003014679A (en) * | 2001-06-28 | 2003-01-15 | Daiwa Can Co Ltd | Method and apparatus for inspecting inner surface coating of metal can |
| JP2009285651A (en) * | 2001-08-28 | 2009-12-10 | Mitsubishi Rayon Co Ltd | Apparatus for manufacturing liquid containing gas dissolved therein for carbonate spring |
| KR100972889B1 (en) | 2007-03-21 | 2010-07-28 | 리션 랴오 | Resistance control system |
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| JP2016157895A (en) * | 2015-02-26 | 2016-09-01 | 東京エレクトロン株式会社 | Substrate processing system, control method for substrate processing system, and storage medium |
| JP2017204495A (en) * | 2016-05-09 | 2017-11-16 | 株式会社荏原製作所 | Substrate cleaning device |
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-
1998
- 1998-09-03 JP JP10249783A patent/JP2000070887A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020093397A (en) * | 2001-06-08 | 2002-12-16 | (주)보명하이텍 | Apparatus annexing carbon dioxide to deionizer water |
| JP2003014679A (en) * | 2001-06-28 | 2003-01-15 | Daiwa Can Co Ltd | Method and apparatus for inspecting inner surface coating of metal can |
| JP2009285651A (en) * | 2001-08-28 | 2009-12-10 | Mitsubishi Rayon Co Ltd | Apparatus for manufacturing liquid containing gas dissolved therein for carbonate spring |
| US8096532B2 (en) | 2001-08-28 | 2012-01-17 | Mitsubishi Rayon Co., Ltd. | Device and method for manufacturing carbonated spring and carbonic water, control method for gas density applied thereto and membrane module |
| KR100972889B1 (en) | 2007-03-21 | 2010-07-28 | 리션 랴오 | Resistance control system |
| JP2015041751A (en) * | 2013-08-23 | 2015-03-02 | 東京エレクトロン株式会社 | Liquid processing apparatus |
| JP2016157895A (en) * | 2015-02-26 | 2016-09-01 | 東京エレクトロン株式会社 | Substrate processing system, control method for substrate processing system, and storage medium |
| JP2017204495A (en) * | 2016-05-09 | 2017-11-16 | 株式会社荏原製作所 | Substrate cleaning device |
| US10991602B2 (en) | 2016-05-09 | 2021-04-27 | Ebara Corporation | Substrate washing device |
| CN115106912A (en) * | 2021-03-23 | 2022-09-27 | 株式会社迪思科 | Cutting device |
| JP2022147269A (en) * | 2021-03-23 | 2022-10-06 | 株式会社ディスコ | Cutting device |
| JP2023139854A (en) * | 2022-03-22 | 2023-10-04 | 栗田工業株式会社 | Gas dissolved water production equipment and electronic parts production system |
| JP7775758B2 (en) | 2022-03-22 | 2025-11-26 | 栗田工業株式会社 | Gas-dissolved water manufacturing device and electronic component manufacturing system |
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