JP2000066224A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
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- JP2000066224A JP2000066224A JP23439198A JP23439198A JP2000066224A JP 2000066224 A JP2000066224 A JP 2000066224A JP 23439198 A JP23439198 A JP 23439198A JP 23439198 A JP23439198 A JP 23439198A JP 2000066224 A JP2000066224 A JP 2000066224A
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- Prior art keywords
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- electrode
- insulating film
- display device
- crystal display
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Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 230000005684 electric field Effects 0.000 claims abstract description 40
- 230000001681 protective effect Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 33
- 230000007423 decrease Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 51
- 238000009826 distribution Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 238000011144 upstream manufacturing Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 206010047571 Visual impairment Diseases 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- Liquid Crystal (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は液晶表示装置より詳
しくは横電界駆動型(IPS:インプレーンスイッチン
グモードともいう)液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a lateral electric field driving type (IPS: in-plane switching mode) liquid crystal display device.
【0002】[0002]
【従来の技術】従来、液晶表示装置は、TN(Twisted
Nematic)モードに代表されるように、基板面に対して
垂直な方向に電界を作用させて、液晶分子のダイレクタ
(分子軸)の配向を変化させることにより、光の透過率
を制御して、パネルに画像を表示するタイプ(以下、縦
電界駆動型という)のものが一般的であった。しかしな
がら、この縦電界駆動型の液晶表示装置では、電界印加
時に、ダイレクタが基板表面に対して垂直に配向し、そ
の結果、視角方向により屈折率が変化するために視野角
依存性が強く、広視野角が求められる用途には適してい
ない。2. Description of the Related Art Conventionally, a liquid crystal display device is a TN (Twisted
Nematic) mode, an electric field acts in a direction perpendicular to the substrate surface to change the director (molecular axis) orientation of the liquid crystal molecules, thereby controlling the light transmittance. A type that displays an image on a panel (hereinafter, referred to as a vertical electric field driving type) was generally used. However, in this vertical electric field driving type liquid crystal display device, when an electric field is applied, the director is oriented perpendicular to the substrate surface, and as a result, the refractive index changes depending on the viewing angle direction, so that the viewing angle dependence is strong, and the liquid crystal display device has a wide viewing angle. It is not suitable for applications requiring a viewing angle.
【0003】これに対して、液晶分子のダイレクタを基
板面に平行に配向し、基板面に対して平行な方向に電界
を作用させてダイレクタを基板面に平行な面内で回転さ
せることにより、光の透過率を制御して画像表示を行う
タイプ(以下、横電界駆動型という)の液晶表示装置
が、近年、研究し、開発されている。この横電界駆動型
の液晶表示装置では、視角方向による屈折率変化が著し
く小さいため、広い視野で高画質の表示性能が得られ
る。本発明では、この横電界駆動型の液晶表示装置を対
象とする。On the other hand, the director of liquid crystal molecules is oriented parallel to the substrate surface, and an electric field is applied in a direction parallel to the substrate surface to rotate the director in a plane parallel to the substrate surface. In recent years, a liquid crystal display device of a type that performs image display by controlling light transmittance (hereinafter, referred to as a lateral electric field driving type) has been researched and developed. In the liquid crystal display device of the lateral electric field driving type, since the change in the refractive index in the viewing angle direction is extremely small, high-quality display performance can be obtained in a wide field of view. The present invention is directed to this lateral electric field drive type liquid crystal display device.
【0004】液晶ディスプレイにはSTNのような能動
素子を持たないパッシブマトリクスディスプレイや、T
FT、MIMに代表される各表示画素に能動素子を持つ
アクティブマトリクスディスプレイが存在する。本発明
では、横電界駆動型であれば能動素子の有無は問わない
が、以下では特にTFT型のアクティブマトリクスディ
スプレイに関し説明をする。[0004] Liquid crystal displays include passive matrix displays without active elements such as STN,
There is an active matrix display having an active element in each display pixel represented by FT and MIM. In the present invention, the presence or absence of an active element is not limited as long as it is a lateral electric field driving type. In the following, a TFT type active matrix display will be particularly described.
【0005】まず従来技術の構成を説明する。図10に
表示画素の平面図を示す。表示画素は、外部駆動回路と
接続される走査線502、信号線103、共通電極10
6、およびスイッチング素子である薄膜トランジスタ5
03、および画素電極104から構成される。図11に
図10のa−a’での断面図を示す。First, the configuration of the prior art will be described. FIG. 10 shows a plan view of a display pixel. The display pixels include a scanning line 502 connected to an external driving circuit, a signal line 103, and a common electrode 10.
6, and a thin film transistor 5 as a switching element
03 and a pixel electrode 104. FIG. 11 shows a cross-sectional view taken along aa ′ of FIG.
【0006】図11において、TFT側ガラス基板10
2上には、共通電極106が形成され、その上にゲート
絶縁膜130を介し画素電極104、信号線103が形
成される。その際、画素電極104と共通電極106は
交互に配置される。これら電極は保護絶縁膜110で被
覆され、その上には液晶107を配向させるのに必要で
あるTFT側配向膜120が塗布されラビング処理され
る。このようにしTFT側基板100が作成される。In FIG. 11, a TFT-side glass substrate 10 is provided.
2, a common electrode 106 is formed, on which a pixel electrode 104 and a signal line 103 are formed via a gate insulating film 130. At this time, the pixel electrodes 104 and the common electrodes 106 are alternately arranged. These electrodes are covered with a protective insulating film 110, on which a TFT-side alignment film 120 necessary for aligning the liquid crystal 107 is applied and rubbed. Thus, the TFT-side substrate 100 is formed.
【0007】対向側ガラス基板101上には遮光膜20
3がマトリクス状に設けられ、その上に色表示をするた
めに必要な色層142が形成される。さらにその上に対
向基板上を平坦化させるに必要な平坦化膜202が設け
られ、その上に液晶107を配向させるのに必要である
対向側配向膜122が塗布されラビング処理される。ラ
ビング方向はTFT側基板100に施した方向と逆方向
である。このようにし、対向側基板200が作成され
る。The light-shielding film 20 is formed on the glass substrate 101 on the opposite side.
3 are provided in a matrix, on which a color layer 142 necessary for color display is formed. Further, a flattening film 202 necessary for flattening the counter substrate is provided thereon, and a counter-side alignment film 122 necessary for aligning the liquid crystal 107 is applied thereon and subjected to a rubbing process. The rubbing direction is opposite to the direction applied to the TFT-side substrate 100. Thus, the opposing substrate 200 is formed.
【0008】TFT側基板100と対向側基板200の
間には、液晶107、スペーサ302が封入される。両
基板のギャップはスペーサ302の直径により決定され
る。最後に、TFT側ガラス基板102の電極パターン
を形成しない面にはTFT側偏光板145がラビング方
向に透過軸が直交するよう貼りつけられ、対向側ガラス
基板101の各種パターンが存在しない側には対向側偏
光板143が、透過軸がTFT側偏光板145の透過軸
方向と直交するように貼りつけられる。以上により、液
晶表示パネル300が完成する。A liquid crystal 107 and a spacer 302 are sealed between the TFT side substrate 100 and the opposite side substrate 200. The gap between the two substrates is determined by the diameter of the spacer 302. Lastly, a TFT-side polarizing plate 145 is attached to the surface of the TFT-side glass substrate 102 where no electrode pattern is formed, so that the transmission axis is orthogonal to the rubbing direction. The opposite-side polarizing plate 143 is attached such that the transmission axis is orthogonal to the transmission axis direction of the TFT-side polarizing plate 145. Thus, the liquid crystal display panel 300 is completed.
【0009】図12に液晶表示装置の構成を示す。液晶
表示パネル300は、バックライト400の上に設置さ
れ、駆動回路500に接続される。FIG. 12 shows a configuration of a liquid crystal display device. The liquid crystal display panel 300 is installed on the backlight 400 and connected to the driving circuit 500.
【0010】次に動作について説明する。図10で共通
電極106と同層で設けられた走査線502のON/O
FF信号により、薄膜トランジスタ503がスイッチン
グし、薄膜トランジスタ503がONであるときは信号
線103から電荷が画素電極104に流れ込み、OFF
した後は電荷を保持しある一定の電位を保つ。共通電極
106には常時一定の直流電圧が印加されている。走査
線502、信号線103、共通電極106への信号は図
12における駆動回路500より供給される。これら信
号により生ずる画素電極104と共通電極106の電位
差により、ガラス基板に平行な横電界が生じる。Next, the operation will be described. In FIG. 10, ON / O of the scanning line 502 provided in the same layer as the common electrode 106 is shown.
The thin film transistor 503 is switched by the FF signal, and when the thin film transistor 503 is on, electric charge flows from the signal line 103 to the pixel electrode 104 and turns off.
After that, the electric charge is held and a certain potential is maintained. A constant DC voltage is constantly applied to the common electrode 106. Signals to the scanning line 502, the signal line 103, and the common electrode 106 are supplied from the driving circuit 500 in FIG. Due to a potential difference between the pixel electrode 104 and the common electrode 106 caused by these signals, a horizontal electric field parallel to the glass substrate is generated.
【0011】それにより、図13に示すように液晶分子
303は液晶のもつ誘電率異方性と周囲電界のガラス基
板に平行な成分との作用により回転することにより(図
13は液晶の誘電率異方性が正の場合、負の場合は逆回
転)液晶層のリターデーションが変化し、遮光膜20
3、画素電極104、共通電極106、走査線502、
薄膜トランジスタ503が設置されていない部位で、図
13でのバックライト400から出射された光のパネル
透過量が変化する。光のパネル透過量の変化は、式
(1)のように近似的に表現できる。As a result, as shown in FIG. 13, the liquid crystal molecules 303 rotate by the action of the dielectric anisotropy of the liquid crystal and the component of the surrounding electric field parallel to the glass substrate (FIG. 13 shows the dielectric constant of the liquid crystal). When the anisotropy is positive, when the anisotropy is negative, the rotation is reversed.) The retardation of the liquid crystal layer changes,
3, the pixel electrode 104, the common electrode 106, the scanning line 502,
At a portion where the thin film transistor 503 is not installed, the amount of light transmitted from the backlight 400 in FIG. The change in the amount of light transmitted through the panel can be approximately expressed as in equation (1).
【0012】[0012]
【数1】 Ψ :平均的な液晶配向方向と初期配向方向のなす角 Δn:液晶の屈折率異方性 d :セルギャップ λ :透過光波長 ここで、角度Ψは共通電極106、画素電極104の電
極間電圧に依存する関数である。電極間電圧と光透過量
の関係を測定した結果の一例を図14に示す。ここで、
最大透過率をピーク透過率と呼ぶことにする。以上が従
来技術の構成、動作である。従来の技術の主な欠点は次
のようである。(Equation 1) :: angle between the average liquid crystal alignment direction and the initial alignment direction Δn: refractive index anisotropy of the liquid crystal d: cell gap λ: transmitted light wavelength Here, the angle Ψ is the voltage between the common electrode 106 and the pixel electrode 104. Is a function that depends on FIG. 14 shows an example of the result of measuring the relationship between the voltage between the electrodes and the amount of light transmission. here,
The maximum transmittance is called peak transmittance. The above is the configuration and operation of the related art. The main disadvantages of the prior art are as follows.
【0013】高開口率を得るために画素電極幅を狭くし
た場合に、電極脇の開口部にリバースチルトモードのデ
ィスクリネーションが出現し以下の不具合が発生する。When the width of the pixel electrode is reduced in order to obtain a high aperture ratio, reverse tilt mode disclination appears at the opening beside the electrode, and the following problems occur.
【0014】透過率の低下 輝度むら 残像感 上記欠点を生じる理由として以下のように考えられる。
横電界型液晶表示装置の共通電極106、画素電極10
4(以下この2電極を単に電極と称する)近傍の液晶配
向を考察する。TFT側配向膜120に図15に示す方
向でラビング処理を施し、液晶107をTFT側基板1
00と対向側基板200の間に注入すると、TFT側基
板100上で液晶107は、プレチルト角と呼ばれる液
晶材料と配向膜材料で定まる一定角度θ0でTFT側基
板100上に配列する。一例を挙げると、θ=3〜4°
程度である。電極に電圧を印加すると、電極近傍および
電極上には放射状の電界が形成されるため、液晶分子に
はx-y平面での回転するトルクと同時にz軸方向へ立
ち上がろうとするトルクが生じる。図16での液晶のダ
イレクタ方向と電界の方向のなす角をαとし、発生する
トルクの大きさをTとするとTとαの関係は近似的に
(2)式のように表される。The decrease in transmittance, uneven brightness, afterimage feeling The reason for the above drawbacks is considered as follows.
The common electrode 106 and the pixel electrode 10 of the horizontal electric field type liquid crystal display device
The liquid crystal alignment near No. 4 (hereinafter these two electrodes are simply referred to as electrodes) will be considered. A rubbing process is performed on the TFT-side alignment film 120 in the direction shown in FIG.
When injected between the counter substrate 200 and the counter substrate 200, the liquid crystals 107 are arranged on the TFT substrate 100 on the TFT substrate 100 at a constant angle θ 0 called a pretilt angle determined by a liquid crystal material and an alignment film material. To give an example, θ = 3-4 °
It is about. When a voltage is applied to the electrode, a radial electric field is formed in the vicinity of and on the electrode, so that the liquid crystal molecules generate a torque that rotates in the xy plane and a torque that tends to rise in the z-axis direction. Assuming that the angle between the direction of the director of the liquid crystal and the direction of the electric field in FIG. 16 is α and the magnitude of the generated torque is T, the relationship between T and α is approximately expressed by equation (2).
【0015】[0015]
【数2】 ここで、△εは液晶の誘電率異方性、Eは液晶の電界強
度である。電極に電圧を印加した時の電極近傍の電界お
よび液晶がz軸方向に立ち上がろうとする際の回転トル
クの方向を図16に示す。ただし図16はダイレクタを
yz平面に射影して描いてある。図16において電極よ
り発する電界により電極近傍の液晶のうちラビング上流
側に存在する液晶は紙面に向かって右回りのトルクを受
け、ラビング下流側に存在する液晶は左回りのトルクを
受ける。受けるトルクの大きさは式(2)に従う。トル
クの均衡点はプレチルト角の影響により電極中央部より
ラビング上流側に位置している(A点)。この点では電
界が液晶のダイレクタに対しほぼ垂直入射し、液晶は初
期のチルト角(プレチルト角)をほぼ維持する((2)
式でα=90°)。一般的に、このような液晶の配向ベ
クトルの不連続面をディスクリネーションと呼んでい
る。特にこの場合は、液晶のチルト角の不連続変化であ
るのでリバースチルト系のディスクリネーションと呼ば
れる。液晶は誘電率に異方性をもつので、この電極近傍
の液晶の立ち上がりにより電界分布は変化する。誘電体
中の電界の大きさEは、真空中での電界をE0としたと
き(3)式のように記述できる。(Equation 2) Here, Δε is the dielectric anisotropy of the liquid crystal, and E is the electric field strength of the liquid crystal. FIG. 16 shows the electric field near the electrode when a voltage is applied to the electrode and the direction of the rotational torque when the liquid crystal tries to rise in the z-axis direction. However, FIG. 16 depicts the director projected on the yz plane. In FIG. 16, due to the electric field generated from the electrode, the liquid crystal existing on the rubbing upstream side among the liquid crystals near the electrode receives a clockwise torque toward the paper surface, and the liquid crystal existing on the rubbing downstream side receives a counterclockwise torque. The magnitude of the torque received is in accordance with equation (2). The torque equilibrium point is located on the rubbing upstream side from the center of the electrode due to the influence of the pretilt angle (point A). At this point, the electric field is almost perpendicularly incident on the director of the liquid crystal, and the liquid crystal substantially maintains the initial tilt angle (pretilt angle) ((2)).
Α = 90 ° in the equation). Generally, such a discontinuous plane of the orientation vector of the liquid crystal is called disclination. In particular, in this case, since the tilt angle of the liquid crystal changes discontinuously, it is called a reverse tilt type disclination. Since the liquid crystal has anisotropy in the dielectric constant, the electric field distribution changes due to the rise of the liquid crystal near the electrode. The magnitude E of the electric field in the dielectric can be described as equation (3) when the electric field in vacuum is E 0 .
【0016】[0016]
【数3】 (ここでε0は真空中の誘電率である。) △ε>0である液晶ではダイレクタの方向が誘電率が大
きくなるため、電界のダイレクタ方向成分は(3)式よ
り小さくなる。すると、等電位面は図17(b)のよう
になるため、電極近傍でz軸方向に平行な電界すなわち
電界のxy成分が0となるような位置は、電極中央から
ややラビング上流側に位置する。液晶がプレチルト角を
もたない場合は図17(a)のように、等電位面は電極
に対し対称となるが、ラビング法によって作成された液
晶パネルでは、プレチルト角が発現するため図(b)の
ような電界分布になる。このとき、上記、電界のx,y
成分が0となる位置では、図18示すように液晶分子3
03がx,y平面で回転をしないため、液晶分子は初期
配向方位をほぼ維持しており光の透過率は低い。以上に
より横電界方式の液晶表示装置において電極上のリバー
スチルトのディスクリネーションの位置では、液晶分子
が初期配向方位をほぼ維持している。ディスクリネーシ
ョンの位置は、電極近傍の電界分布とプレチルト角によ
り決定される。電極幅が狭い場合に代表されるような電
極エッジ付近でz軸方向の電界成分が多く発生する構造
であるとディスクリネーションの位置は開口部に近くな
るといえる。開口部に、このディスクリネーションの影
響が現れると、当然開口部の透過率は低下することにな
る。(Equation 3) (Here, ε 0 is the dielectric constant in a vacuum.) In a liquid crystal with Δε> 0, the director direction has a large dielectric constant, so that the component of the electric field in the director direction is smaller than the expression (3). Then, since the equipotential surface is as shown in FIG. 17B, the position where the electric field parallel to the z-axis direction, that is, the xy component of the electric field becomes 0 near the electrode is located slightly upstream of the rubbing from the center of the electrode. I do. When the liquid crystal does not have a pretilt angle, the equipotential surface is symmetric with respect to the electrodes as shown in FIG. 17 (a). However, in the liquid crystal panel formed by the rubbing method, the pretilt angle appears, so that FIG. ). At this time, the electric field x, y
At the position where the component becomes 0, as shown in FIG.
Since 03 does not rotate in the x and y planes, the liquid crystal molecules substantially maintain the initial orientation direction, and the light transmittance is low. As described above, at the position of the reverse tilt disclination on the electrode in the in-plane switching mode liquid crystal display device, the liquid crystal molecules almost maintain the initial orientation direction. The position of the disclination is determined by the electric field distribution near the electrode and the pretilt angle. In a structure in which a large electric field component in the z-axis direction is generated near the electrode edge as typified by a narrow electrode width, it can be said that the position of the disclination is close to the opening. If the effect of the disclination appears in the opening, the transmittance of the opening naturally decreases.
【0017】以上が簡易的な電極近傍の液晶のダイレク
タ分布の考察であるが、電界分布と液晶の配向方位の決
定は同時に起こる現象であり、解析的手法で詳細な考察
をするのは困難である。そこで、以下では数値計算の手
法により実際にダイレクタ分布を計算した。The above is a simple consideration of the director distribution of the liquid crystal in the vicinity of the electrode. However, the determination of the electric field distribution and the orientation of the liquid crystal are simultaneous phenomena, and it is difficult to perform a detailed consideration by an analytical method. is there. Therefore, in the following, the director distribution was actually calculated by a numerical calculation method.
【0018】電極幅が4μmの場合と2μmの場合の各々
について液晶のダイレクタ分布と透過率を数値計算した
結果を図19、20にそれぞれ示す。図19、20の読
みとり方について以下説明する。上図(a)は液晶のダ
イレクタ分布を下図(b)は液晶セルの透過率分布を表
している。上図(a)で四角で囲まれた領域は液晶が封
入されている部分であり、短い線分は液晶分子のダイレ
クタをy、z平面に射影したものである。液晶層の上側
は、TFT側基板、下側は対向側基板である。計算速度
の都合で共通電極、画素電極(電極と総称)は同層の形
状である。下図(b)では、素子内電極付近の各位置で
の透過率の分布を数種の電極間電圧毎に描いたものであ
る。電極は長方形で描いてある。図19、図20で、以
下のことが分かる。FIGS. 19 and 20 show the results of numerical calculation of the director distribution and transmittance of the liquid crystal when the electrode width is 4 μm and when the electrode width is 2 μm. How to read FIGS. 19 and 20 will be described below. The upper diagram (a) shows the director distribution of the liquid crystal and the lower diagram (b) shows the transmittance distribution of the liquid crystal cell. The area enclosed by a square in the above figure (a) is a portion where liquid crystal is sealed, and a short line segment is a projection of a director of liquid crystal molecules onto the y and z planes. The upper side of the liquid crystal layer is a TFT-side substrate, and the lower side is a counter-side substrate. The common electrode and the pixel electrode (collectively referred to as electrodes) have the same layer shape because of the calculation speed. In the lower diagram (b), the distribution of the transmittance at each position near the electrode in the element is drawn for each of several types of inter-electrode voltages. The electrodes are drawn in a rectangle. 19 and 20, the following can be seen.
【0019】電極幅2μmの場合には、ディスクリネー
ションが開口部に出現しており、その部位を中心に透過
率が低下している。電極幅4μmの場合には、ディスク
リネーションが電極上に隠れており、開口部での透過率
への影響は少ない。When the electrode width is 2 μm, the disclination appears in the opening, and the transmittance is reduced around that portion. When the electrode width is 4 μm, the disclination is hidden on the electrode, and the influence on the transmittance at the opening is small.
【0020】一般的に開口部にディスクリネーションが
発生すると透過率が低下するだけでなく、開口部にディ
スクリネーションが発生する場合にはディスクリネーシ
ョン形成の過渡状態が目に見えることによりユーザーの
目には残像として感じる。さらに面内でのディスクリネ
ーションの発生位置にばらつきがある場合には、面内で
の透過率不均一性、いわゆる表示ムラが発生する。In general, when disclination occurs in an opening, not only does the transmittance decrease, but when disclination occurs in an opening, a transient state of disclination formation is visible to the user. To the eyes as afterimages. Further, when there is a variation in the position where disclination occurs in the plane, non-uniformity of transmittance in the plane, that is, so-called display unevenness occurs.
【0021】[0021]
【発明が解決しようとする課題】本発明は横電界駆動型
の液晶表示装置において、電極上のディスクリネーショ
ンの影響が開口部に出現する現象を抑制し、パネル透過
率の向上、残像、表示むらの低減を図ることを目的とす
る。SUMMARY OF THE INVENTION The present invention relates to a liquid crystal display of a lateral electric field drive type, which suppresses a phenomenon in which the effect of disclination on electrodes appears in an opening, improves panel transmittance, improves afterimages, and displays images. The purpose is to reduce unevenness.
【0022】[0022]
【課題を解決するための手段】上記目的を達成する本発
明は次のようである。 1 第1の透明基板と、前記第1の透明基板上に延在す
る共通電極、走査信号線、並びに、ゲート絶縁膜を介し
てそれぞれ前記共通電極と平行にかつ相互に離隔して延
在する画素電極および信号線を有し、最上層が保護絶縁
膜により被覆され、マトリクス状に配置された複数個の
画素毎に設けられた電極構造およびアクティブ素子、前
記電極構造上に設けられラビング法による配向処理を施
された第1の配向膜とを備える第1の基板と、第2の透
明基板と、前記第2の透明基板上に遮光膜及び配向処理
を施された第2の配向膜を順次に備え、前記第1の基板
の第1の配向膜に前記第2の配向膜が対向させて設置さ
れ、かつ画素毎に少なくとも前記画素電極の一部を露出
する開口領域を前記遮光膜に有する第2の基板と、前記
第1の基板上の第1の配向巻くと前記第2の基板上の第
2の配向膜との間に収容された正の誘電率異方性を有す
る液晶組成物の層とを有する横電界駆動型のアクティブ
マトリクス型液晶表示装置において、前記共電極と画素
電極の隣接して左右に存在する領域のうち液晶のダイレ
クタの第一の基板から液晶に向かう方向が前記共通電
極、画素電極に近づく方向である側の領域を他の領域と
比較した場合に実効的なパネルギャップを厚くしてなる
ことを特徴とする液晶表示装置。 2 前記、実効的なパネルギャップを厚くしてなる構造
が電極の長手方向と平行に延在するスリットをゲート絶
縁膜、保護絶縁膜の少なくとも一方に設けることである
上記1に記載の液晶表示装置。 3 前記、実効的なパネルギャップを厚くしてなる構造
が、スリットをゲート絶縁膜、保護絶縁膜の少なくとも
一方に部分的に設けることである上記1に記載の液晶表
示装置。 4 前記、実効的なパネルギャップを厚くしてなる構造
が、電極の長手方向と平行に延在するスリットを一部電
極とオーバーラップする形でゲート絶縁膜、保護絶縁膜
の少なくとも一方に設けることである上記記載1に記載
の液晶表示装置。 5 前記、実効的なパネルギャップを厚くする構造が、
電極の長手方向と平行に延在するスリットと一部電極と
オーバーラップする形でゲート絶縁膜、保護絶縁膜の少
なくとも一方に部分的に設けることである上記1に記載
の液晶表示装置。 6 前記第一の透明基板と、第2の透明基板が、ともに
ガラス基板であることを特徴とする上記1ないし5に記
載の液晶表示装置。 7 上記1に記載の液晶表示装置の製造方法であって、
ゲート絶縁膜および保護絶縁膜の少なくとも一方に、電
極の長手方向に平行なスリットを少なくとも部分的に形
成することを特徴とする製造方法。 8 前記、スリットを、電極と一部オーバーラップする
形で形成することを特徴とする上記7に記載の製造方
法。The present invention to achieve the above object is as follows. 1. A first transparent substrate, a common electrode extending over the first transparent substrate, a scanning signal line, and a gate insulating film interposed in parallel with the common electrode and separated from each other. A pixel electrode and a signal line, an uppermost layer covered with a protective insulating film, an electrode structure and an active element provided for each of a plurality of pixels arranged in a matrix, and a rubbing method provided on the electrode structure; A first substrate including an alignment-treated first alignment film, a second transparent substrate, and a light-shielding film and an alignment-treated second alignment film on the second transparent substrate. The second alignment film is provided so as to face the first alignment film of the first substrate, and an opening region exposing at least a part of the pixel electrode for each pixel is formed in the light shielding film. A second substrate having a first substrate on the first substrate; And a layer of a liquid crystal composition having a positive dielectric anisotropy accommodated between the second alignment film and the second alignment film on the second substrate. In the device, of the regions present adjacent to the common electrode and the pixel electrode on the left and right sides, the region on the side where the direction from the first substrate of the liquid crystal director toward the liquid crystal is closer to the common electrode and the pixel electrode is the other region. A liquid crystal display device characterized in that the effective panel gap is made thicker as compared with the region (1). 2. The liquid crystal display device according to the above item 1, wherein the structure obtained by increasing the effective panel gap is that a slit extending parallel to the longitudinal direction of the electrode is provided in at least one of the gate insulating film and the protective insulating film. . 3. The liquid crystal display device according to the above item 1, wherein the structure obtained by increasing the effective panel gap is that a slit is partially provided in at least one of a gate insulating film and a protective insulating film. 4. The structure in which the effective panel gap is thickened, wherein a slit extending parallel to the longitudinal direction of the electrode is provided on at least one of the gate insulating film and the protective insulating film so as to partially overlap the electrode. 2. The liquid crystal display device according to the above item 1, wherein 5 The structure for increasing the effective panel gap is as follows:
2. The liquid crystal display device according to the above item 1, wherein a slit extending in parallel with the longitudinal direction of the electrode and a part of the electrode are partially provided on at least one of the gate insulating film and the protective insulating film. 6. The liquid crystal display device according to any one of the above items 1 to 5, wherein both the first transparent substrate and the second transparent substrate are glass substrates. 7. The method for manufacturing a liquid crystal display device according to 1 above,
A manufacturing method, wherein a slit parallel to a longitudinal direction of an electrode is at least partially formed in at least one of a gate insulating film and a protective insulating film. 8. The manufacturing method according to the above 7, wherein the slit is formed so as to partially overlap the electrode.
【0023】[0023]
【発明の実施の形態】以下、本発明を実施例により具体
的に説明をする。図示はTFT駆動のアクティブマトリ
クス型を代表として描いてあるが、横電界駆動型の液晶
表示装置であれば他の方式にも適用できる。また、以下
はラビング法によるプレチルト発現を代表して議論して
いるが、本発明はプレチルト角を光配向法、斜方蒸着法
などの手段により発現させたものに対しても適用でき、
発現手段は問わない。座標系は、ガラス基板平面上で電
極の長手方向にx軸、長手方向と垂直な方向にy軸、ガ
ラス基板と垂直なセル厚方向にz軸をとることにする。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described specifically with reference to examples. Although the drawing illustrates a TFT driven active matrix type as a representative, the present invention can be applied to other methods as long as it is a horizontal electric field driving type liquid crystal display device. Also, the following is discussed on behalf of the pre-tilt expression by the rubbing method, but the present invention can be applied to those in which the pre-tilt angle is expressed by a method such as a photo-alignment method or an oblique deposition method,
The expression means does not matter. The coordinate system is such that the x-axis is taken in the longitudinal direction of the electrode, the y-axis is taken in a direction perpendicular to the longitudinal direction, and the z-axis is taken in the cell thickness direction perpendicular to the glass substrate, on the glass substrate plane.
【0024】[0024]
【実施例】実施例1 実施例1の構造を図を用いて説明する。平面図を図1
に、b−b’のTFT側基板の断面図を図2に示す。従
来技術との構造の違いは共通電極106、画素電極10
4のラビング上流側の脇の保護絶縁膜あるいはゲート絶
縁膜に,電極に接し電極と平行な絶縁膜スリット210
が形成されている点である。その他の構成は従来技術と
同様である。Embodiment 1 The structure of Embodiment 1 will be described with reference to the drawings. Figure 1 is a plan view
FIG. 2 is a cross-sectional view of the bb ′ TFT-side substrate. The difference from the conventional technology is that the common electrode 106, the pixel electrode 10
In the protective insulating film or the gate insulating film on the side of the rubbing upstream side of No. 4, an insulating film slit 210 in contact with and parallel to the electrode.
Is formed. Other configurations are the same as those of the related art.
【0025】電極近傍の電界および液晶の配向方向の模
式図を図3に示す。FIG. 3 is a schematic diagram showing the electric field near the electrodes and the orientation direction of the liquid crystal.
【0026】一般的にしきい値電圧はパネルギャップの
大きさの逆数に比例するため、絶縁膜スリット210が
形成されている部分では実効的なパネルギャップが大き
く、電界のz軸方向成分によるチルト角の増加、および
x,y方向の電界によるツイスト角の増加は、絶縁膜ス
リット210の無い部位と比較して大きくなる。このチ
ルト角、ツイスト角がラビング上流側で大きくなる効果
により、チルト角、ツイスト角が初期配向方位と変化し
ない部分、すなわち光が透過しない領域は従来技術と比
較して電極中央部に寄ることになる。ツイスト角分布の
従来技術との比較図を図4に示す。ただし、ラビング上
流側の電極近傍の束縛力をある値以上弱くすると、今度
はラビング下流側にディスクリネーションの影響が現れ
るため、スリット幅は適切に設定する必要がある。Since the threshold voltage is generally proportional to the reciprocal of the size of the panel gap, the effective panel gap is large in the portion where the insulating film slit 210 is formed, and the tilt angle due to the z-axis component of the electric field is increased. And an increase in the twist angle due to the electric field in the x and y directions are larger than those in a portion where the insulating film slit 210 is not provided. Due to the effect of increasing the tilt angle and the twist angle on the upstream side of the rubbing, a portion where the tilt angle and the twist angle do not change from the initial orientation azimuth, that is, a region where light does not pass, is closer to the center of the electrode as compared with the related art. Become. FIG. 4 shows a comparison diagram of the twist angle distribution with the prior art. However, if the binding force in the vicinity of the electrode on the upstream side of the rubbing is weakened by a certain value or more, the effect of disclination appears on the downstream side of the rubbing, so the slit width needs to be set appropriately.
【0027】液晶シミュレーションにて、本発明の構造
でのダイレクタ分布、透過率分布を計算した結果を図5
に示す。図の読み方は、前述の図19、20と同様であ
る。ただし、計算速度の都合で電極は同層に形成してい
る。絶縁膜スリット210の形状はテーパー幅1μm、
平坦部1μm、深さ0.5μmである。FIG. 5 shows the result of calculating the director distribution and transmittance distribution in the structure of the present invention by liquid crystal simulation.
Shown in The way of reading the figures is the same as in FIGS. 19 and 20 described above. However, the electrodes are formed in the same layer for the sake of calculation speed. The shape of the insulating film slit 210 is a taper width of 1 μm,
The flat part is 1 μm and the depth is 0.5 μm.
【0028】従来技術と異なり、ディスクリネーション
が電極に隠れているため開口部での透過率も向上してい
る。動作の項で述べたように、リバースチルトのディス
クリネーションを電極上に留めるために、絶縁膜スリッ
ト210の形状は適切な大きさに設定する必要がある。
電極間スペース10μm、電極幅2μmの場合に、絶縁膜
スリット210の深さを一定(=0.5μm)、テーパ
ー幅も一定(1μm)にし、スリットの幅(テーパー幅
+平坦部の幅)を変化させ開口部の平均の透過率を計算
した結果を図6示す。なお、電極間の電圧はピーク透過
率を与える電圧に設定してある。この場合では、スリッ
トの幅が3μmである場合が最適であることが分かる。Unlike the prior art, the disclination is hidden by the electrode, so that the transmittance at the opening is also improved. As described in the operation section, the shape of the insulating film slit 210 needs to be set to an appropriate size in order to keep the reverse tilt disclination on the electrode.
When the interelectrode space is 10 μm and the electrode width is 2 μm, the depth of the insulating film slit 210 is constant (= 0.5 μm), the taper width is also constant (1 μm), and the width of the slit (taper width + width of flat portion) is reduced. FIG. 6 shows the result of calculating the average transmittance of the opening by changing the average transmittance. The voltage between the electrodes is set to a voltage that gives a peak transmittance. In this case, it is understood that the optimum case is when the width of the slit is 3 μm.
【0029】実際に、図2(a)の断面形状の液晶パネ
ルを作成し透過率を測定して従来技術と比較しピーク透
過率が10%向上したのが確認できた。ここで、各パラ
メータの値は電極幅2μm、電極間スペース15μm、ス
リット幅4μm、スリットの深さ0.3μmである。ただ
し、コントラストに5%の低下が見られ、これは液晶の
初期配向が絶縁膜スリット210の段差で乱される影
響、及び絶縁膜スリット210の底で実質的にラビング
強度が低下しているために液晶の初期配向方位が従来技
術に比べ乱れ、黒表示での透過率が上がることが原因と
考えられる。Actually, a liquid crystal panel having the cross-sectional shape shown in FIG. 2A was prepared, and the transmittance was measured. As a result, it was confirmed that the peak transmittance was improved by 10% as compared with the prior art. Here, the values of the parameters are an electrode width of 2 μm, a space between the electrodes of 15 μm, a slit width of 4 μm, and a slit depth of 0.3 μm. However, the contrast is reduced by 5% because the initial alignment of the liquid crystal is disturbed by the step of the insulating film slit 210 and the rubbing strength is substantially reduced at the bottom of the insulating film slit 210. It is considered that the initial orientation direction of the liquid crystal is disturbed compared to the prior art, and the transmittance in black display increases.
【0030】実施例2 図7に本発明実施例2の平面図を示す。実施例1との差
異は絶縁膜スリット210を電極脇に部分的に形成して
いる点であり、断面形状、その他構成は実施例1と同様
である。Embodiment 2 FIG. 7 shows a plan view of Embodiment 2 of the present invention. The difference from the first embodiment is that the insulating film slit 210 is partially formed on the side of the electrode, and the cross-sectional shape and other configurations are the same as those of the first embodiment.
【0031】基本的な動作は実施例1と同様であるが、
部分的に設けてある絶縁膜スリット210で実施例1と
同様な効果を発生させ、他の部位にはネマチック液晶の
分子間相互作用(ダイレクタが同一方向を向こうとする
性質)を利用しスリット部での効果を波及させている。The basic operation is the same as that of the first embodiment,
The same effect as in the first embodiment is generated by the insulating film slit 210 provided partially, and the other portion is formed by utilizing the intermolecular interaction of the nematic liquid crystal (the property that the director faces the same direction). The effect is spread.
【0032】実際に平面形状が図7、断面形状が図2
(a)である液晶パネルを作成し透過率を測定すると従
来技術と比較しピーク透過率が3%程度向上した。ここ
で、各パラメータの値は電極幅2μm、電極間スペース
15μm、スリット幅はx軸方向に4μm、y軸方向に1
0μm、スリットの深さは0.3μmである。透過率の向
上値は実施例1と比較し低いがコントラストの低下が
0.5%以下に抑えられた。スリット面積が小さいため
スリット境界部、及びスリット底部での弱ラビングによ
る液晶の配向乱れが無視できるためと考えられる。FIG. 7 is a plan view and FIG.
When the liquid crystal panel of (a) was prepared and the transmittance was measured, the peak transmittance was improved by about 3% as compared with the prior art. Here, the value of each parameter is an electrode width of 2 μm, a space between the electrodes is 15 μm, and a slit width is 4 μm in the x-axis direction and 1 in the y-axis direction.
0 μm and the depth of the slit is 0.3 μm. Although the transmittance improvement value was lower than that of Example 1, the decrease in contrast was suppressed to 0.5% or less. It is considered that since the slit area is small, the disturbance of the alignment of the liquid crystal due to the weak rubbing at the slit boundary and the slit bottom can be ignored.
【0033】実施例3 本実施例3の構造を図を用いて説明する。平面図を図8
に、d−d’の断面図を図9に示す。Embodiment 3 The structure of Embodiment 3 will be described with reference to the drawings. Fig. 8
FIG. 9 is a sectional view taken along line dd ′.
【0034】従来技術との構造の違いは共通電極10
6、画素電極104のラビング上流側の脇以外にも電極
上の一部の保護絶縁膜、あるいはゲート絶縁膜に絶縁膜
スリット210を形成している点である。その他の構成
は従来技術と同様である。実施例2と同様に部分的にス
リットを形成してもよい。The difference in structure from the prior art is that the common electrode 10
Sixth, the insulating film slit 210 is formed in a part of the protective insulating film or the gate insulating film on the electrode other than the side of the pixel electrode 104 on the rubbing upstream side. Other configurations are the same as those of the related art. A slit may be formed partially as in the second embodiment.
【0035】基本的な動作は実施例1、2と同様であ
り、ラビング上流側の電極のエッジが配向膜と接してい
ることで実施例1、2の効果が強調される。本例の液晶
パネルの性能試験の結果実施例1、2と比較し同一のピ
ーク透過率が得られ、さらに高コントラスト(実施例
1、2比で3%の向上)が実現できた。ただし、電極幅
が2〜4μm程度であるためスリット形成の際にファイ
ンプロセスが要求される。The basic operation is the same as that of the first and second embodiments. The effect of the first and second embodiments is emphasized because the edge of the electrode on the rubbing upstream side is in contact with the alignment film. As a result of the performance test of the liquid crystal panel of this example, the same peak transmittance was obtained as compared with Examples 1 and 2, and a high contrast (3% improvement compared to Examples 1 and 2) was realized. However, since the electrode width is about 2 to 4 μm, a fine process is required when forming the slit.
【0036】[0036]
【発明の効果】本発明によれば横電界駆動型の液晶表示
装置において、画素電極または共通電極のラビング上流
側の領域に他領域と比較ししきい値電圧の低い部分を形
成することにより、電極上のディスクリネーションの影
響が開口部に出現する現象を抑制し、パネル透過率の向
上、残像、表示むらの低減を図ることができる。According to the present invention, in a lateral electric field driving type liquid crystal display device, a portion having a lower threshold voltage than other regions is formed in a region on the rubbing upstream side of a pixel electrode or a common electrode. It is possible to suppress a phenomenon in which the effect of disclination on the electrode appears at the opening, thereby improving panel transmittance, reducing afterimages, and reducing display unevenness.
【図1】実施例1の単位画素の平面図である。FIG. 1 is a plan view of a unit pixel according to a first embodiment.
【図2】実施例1の構造の断面図である。FIG. 2 is a cross-sectional view of the structure of the first embodiment.
【図3】実施例1の電極近傍の電界とチルト角の関係を
示す模式図である。FIG. 3 is a schematic diagram illustrating a relationship between an electric field near an electrode and a tilt angle in Example 1.
【図4】実施例1の電極近傍の液晶のツイスト角の分布
を示す模式図である。FIG. 4 is a schematic diagram showing a distribution of a twist angle of a liquid crystal in the vicinity of an electrode in Example 1.
【図5】実施例1のダイレクタ分布および透過率分布を
計算した結果である。FIG. 5 is a result of calculating a director distribution and a transmittance distribution of Example 1.
【図6】実施例1の電極脇スリット幅とピーク透過率の
関係を計算した結果である。FIG. 6 shows the result of calculating the relationship between the electrode side slit width and the peak transmittance in Example 1.
【図7】実施例2の単位画素の平面図である。FIG. 7 is a plan view of a unit pixel according to a second embodiment.
【図8】実施例3の単位画素の平面図である。FIG. 8 is a plan view of a unit pixel according to a third embodiment.
【図9】実施例3の単位画素の断面図である。FIG. 9 is a cross-sectional view of a unit pixel according to a third embodiment.
【図10】従来技術の単位画素の平面図であ。FIG. 10 is a plan view of a conventional unit pixel.
【図11】従来技術の構造の断面図である。FIG. 11 is a cross-sectional view of a prior art structure.
【図12】一般的な透過型液晶表示装置の構成図であ
る。FIG. 12 is a configuration diagram of a general transmission type liquid crystal display device.
【図13】横電界駆動型の液晶表示装置の光学的動作を
示す模式図である。FIG. 13 is a schematic diagram illustrating an optical operation of a liquid crystal display device of a lateral electric field driving type.
【図14】従来技術の動作(電圧輝度特性)を示す図で
ある。FIG. 14 is a diagram showing an operation (voltage / luminance characteristic) according to the related art.
【図15】ラビング方向とプレチルト角の形成の関係を
示す模式図である。FIG. 15 is a schematic diagram showing the relationship between the rubbing direction and the formation of a pretilt angle.
【図16】従来技術の電極近傍の液晶の立ち上がりの方
向を示す模式図である。FIG. 16 is a schematic view showing a rising direction of a liquid crystal in the vicinity of an electrode according to a conventional technique.
【図17】従来技術の電極近傍の電位分布の模式図であ
る。FIG. 17 is a schematic diagram of a potential distribution in the vicinity of an electrode according to a conventional technique.
【図18】従来技術の電極近傍の液晶のねじれ方向の配
向方位を示す模式図である。FIG. 18 is a schematic diagram showing a conventional liquid crystal twisting orientation in the vicinity of an electrode.
【図19】従来技術(電極幅4μm)のチルト角、透過
率分布を計算した結果を示す図である。FIG. 19 is a diagram showing a calculation result of a tilt angle and a transmittance distribution of a conventional technique (electrode width: 4 μm).
【図20】従来技術(電極幅2μm)のチルト角、透過
率分布を計算した結果を示す図である。FIG. 20 is a diagram showing a calculation result of a tilt angle and a transmittance distribution of a conventional technique (electrode width: 2 μm).
100:TFT側基板 101:対向側ガラス基板 102:TFT側ガラス基板 103:信号線 104:画素電極 106:共通電極 107:液晶 110:保護絶縁膜 120:TFT側配向膜 122:対向側配向膜 130:ゲート絶縁膜 142:色層 143:対向側偏光板 145:TFT側偏光板 200:対向側基板 202:平坦化膜 203:遮光膜 210:絶縁膜スリット 300:液晶表示パネル 302:スペーサ 303:液晶分子 400:バックライト 500:駆動回路 502:走査線 503:薄膜トランジスタ 100: TFT side substrate 101: Opposite side glass substrate 102: TFT side glass substrate 103: Signal line 104: Pixel electrode 106: Common electrode 107: Liquid crystal 110: Protective insulating film 120: TFT side alignment film 122: Opposite side alignment film 130 : Gate insulating film 142: Color layer 143: Opposite polarizing plate 145: TFT side polarizing plate 200: Opposing substrate 202: Flattening film 203: Light shielding film 210: Insulating film slit 300: Liquid crystal display panel 302: Spacer 303: Liquid crystal Molecule 400: backlight 500: driving circuit 502: scanning line 503: thin film transistor
Claims (8)
上に延在する共通電極、走査信号線、並びに、ゲート絶
縁膜を介してそれぞれ前記共通電極と平行にかつ相互に
離隔して延在する画素電極及び映像信号線を有し、最上
層が保護絶縁膜により被覆され、マトリクス状に配置さ
れた複数個の画素毎に設けられた電極構造およびアクテ
ィブ素子、前記電極構造上に設けられラビング法による
配向処理を施された第1の配向膜とを備える第1の基板
と、 第2の透明基板と、前記第2の透明基板上に遮光膜及び
配向処理を施された第2の配向膜を順次に備え、前記第
1の基板の第1の配向膜に前記第2の配向膜が対向させ
て設置され、かつ画素毎に少なくとも前記画素電極の一
部を露出する開口領域を前記遮光膜に有する第2の基板
と、 前記第1の基板上の第1の配向膜と前記第2の基板上の
第2の配向膜との間に収容された正の誘電率異方性を有
する液晶組成物の層とを有する横電界駆動型のアクティ
ブマトリクス型液晶表示装置において、前記共通電極と
画素電極の隣接して左右に存在する領域のうち、液晶の
ダイレクタの第一の基板から液晶に向かう方向が前記共
通電極、画素電極に近づく方向である側の領域を他の領
域と比較した場合に、実効的なパネルギャップを厚くし
てなることを特徴とする液晶表示装置。A first transparent substrate, a common electrode extending on the first transparent substrate, a scanning signal line, and a gate insulating film interposed in parallel with and separated from the common electrode, respectively. An electrode structure and an active element provided for each of a plurality of pixels arranged in a matrix, having a pixel electrode and a video signal line extending in A first substrate provided with a first alignment film that has been subjected to an alignment process by a rubbing method; a second transparent substrate; and a light-shielding film and an alignment process that have been performed on the second transparent substrate. An opening region in which two alignment films are sequentially provided, the second alignment film is provided so as to face the first alignment film of the first substrate, and at least a part of the pixel electrode is exposed for each pixel. A second substrate having the light shielding film, A lateral electric field driving type having a layer of a liquid crystal composition having a positive dielectric anisotropy accommodated between a first alignment film on a substrate and a second alignment film on the second substrate. In the active matrix type liquid crystal display device, in a region adjacent to the common electrode and the pixel electrode and located on the left and right, a direction from the first substrate of the liquid crystal director toward the liquid crystal is a direction approaching the common electrode and the pixel electrode. A liquid crystal display device characterized in that an effective panel gap is made thicker when an area on one side is compared with another area.
てなる構造が、電極の長手方向と平行に延在するスリッ
トをゲート絶縁膜、保護絶縁膜の少なくとも一方に設け
ることである請求項1記載の液晶表示装置。2. The structure in which the effective panel gap is thickened is that a slit extending parallel to the longitudinal direction of the electrode is provided in at least one of the gate insulating film and the protective insulating film. The liquid crystal display device as described in the above.
てなる構造が、スリットをゲート絶縁膜、保護絶縁膜の
少なくとも一方に部分的に設けることである請求項1記
載の液晶表示装置。3. The liquid crystal display device according to claim 1, wherein the structure in which the effective panel gap is thickened is that a slit is partially provided in at least one of a gate insulating film and a protective insulating film.
てなる構造が、電極の長手方向と平行に延在するスリッ
トを一部電極とオーバーラップする形でゲート絶縁膜、
保護絶縁膜の少なくとも一方に設けることである請求項
1記載の液晶表示装置。4. The structure in which the effective panel gap is thickened, wherein a gate insulating film is formed in such a manner that a slit extending parallel to the longitudinal direction of the electrode partially overlaps the electrode.
2. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is provided on at least one of the protective insulating films.
る構造が、電極の長手方向と平行に延在するスリットを
一部電極とオーバーラップする形でゲート絶縁膜、保護
絶縁膜の少なくとも一方に部分的に設けることである請
求項1記載の液晶表示装置。5. A structure for increasing an effective panel gap is provided in at least one of a gate insulating film and a protective insulating film in such a manner that a slit extending in parallel with a longitudinal direction of an electrode partially overlaps the electrode. 2. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is provided partially.
が、ともにガラス基板であることを特徴とする請求項1
ないし5記載の液晶表示装置。6. The apparatus according to claim 1, wherein both the first transparent substrate and the second transparent substrate are glass substrates.
6. The liquid crystal display device according to any one of items 5 to 5.
法であって、ゲート絶縁膜および保護絶縁膜の少なくと
も一方に、電極の長手方向に平行なスリットを少なくと
も部分的に形成することを特徴とする該製造方法。7. The method for manufacturing a liquid crystal display device according to claim 1, wherein a slit parallel to a longitudinal direction of the electrode is formed at least partially in at least one of the gate insulating film and the protective insulating film. The manufacturing method characterized by the above-mentioned.
ップする形で形成することを特徴とする請求項7に記載
の製造方法。8. The method according to claim 7, wherein the slit is formed so as to partially overlap the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23439198A JP3099817B2 (en) | 1998-08-20 | 1998-08-20 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23439198A JP3099817B2 (en) | 1998-08-20 | 1998-08-20 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000066224A true JP2000066224A (en) | 2000-03-03 |
| JP3099817B2 JP3099817B2 (en) | 2000-10-16 |
Family
ID=16970273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23439198A Expired - Fee Related JP3099817B2 (en) | 1998-08-20 | 1998-08-20 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3099817B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008171022A (en) * | 2008-04-03 | 2008-07-24 | Epson Imaging Devices Corp | Liquid crystal device and electronic equipment |
| JP2009223099A (en) * | 2008-03-18 | 2009-10-01 | Epson Imaging Devices Corp | Liquid crystal display device and electronic apparatus |
-
1998
- 1998-08-20 JP JP23439198A patent/JP3099817B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009223099A (en) * | 2008-03-18 | 2009-10-01 | Epson Imaging Devices Corp | Liquid crystal display device and electronic apparatus |
| JP2008171022A (en) * | 2008-04-03 | 2008-07-24 | Epson Imaging Devices Corp | Liquid crystal device and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3099817B2 (en) | 2000-10-16 |
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