JP2000058587A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

[PROBLEMS] To provide a method for easily manufacturing a semiconductor device such as a chip size package including a sealing material layer formed so as to cover an element surface on which a bump is formed and expose an end face of the bump. . SOLUTION: A wafer on which a reactive sealing material is placed is disposed on a molding support, a release film is put on the reactive sealing material, and the wafer and the peeling film are interposed therebetween. The molding of the sealing material by spreading the sealing material on the wafer surface by applying the temperature and pressure is performed only after the reaction rate of the sealing material at this molding temperature becomes 30% or more and less than 100%. Then, the sealing material is cooled, and the release sheet is peeled off, so that the wafer is sealed with a sealing material so that the bump end surfaces are exposed, and then the wafer is cut into individual elements.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device obtained by sealing a wafer having bumps for external terminals with a sealing material so that the end faces of the bumps are exposed, and then cutting the wafer into individual elements. A semiconductor device comprising: a semiconductor element; external terminal bumps formed on the surface thereof; and a sealing material layer formed so as to cover the element surface on which these bumps are formed and to expose end surfaces of the bumps. It relates to a manufacturing method. The present invention also relates to a semiconductor device manufactured by such a method.

[0002]

2. Description of the Related Art With the recent downsizing and downsizing of electronic devices, semiconductor devices have also been reduced in size, thickness and performance. As a type adapted to the miniaturization of semiconductor devices, a wafer having bumps for external terminals on the surface for each element (chip) is sealed so that the bump end surface is exposed, and then cut into individual chips. There is a chip size package (CSP) shown in FIG. In FIG. 1, 1 is a chip size package, 2 is a semiconductor chip, 3 is a bump, 4 is a solder ball, and 5 is a sealing material layer.

[0003] This chip size package is manufactured by the following steps as described with reference to FIG. FIG.
As shown in FIG. 1A, bumps 3 are formed on a semiconductor wafer 11 having individual semiconductor elements formed on the surface by, for example, copper plating. Next, as shown in FIG. 2B, the wafer 11 is covered with the sealing material layer 5. Sealing material layer 5
For example, powder or tablet-like resin composition placed on a semiconductor wafer 11 on which bumps 3 are formed
It is formed while melting at a temperature of 0 to 250 ° C (preferably 150 to 200 ° C) and compression molding. Then, FIG.
As shown in (C), the sealing material on the bump 3 is removed by, for example, irradiating a laser beam or polishing the surface of the sealing material to expose the upper surface of the bump. continue,
As shown in FIG. 2D, solder balls 4 for connecting to a mounting board are formed on the exposed bumps. Finally, as shown in FIG. 2E, the semiconductor wafer is cut and divided into individual chips to manufacture the chip size package 1.

[0004]

As described above, when the sealing material covering the upper end surface of the bump is removed, the use of laser light irradiation or polishing increases the equipment cost and complicates the process. turn into.

Accordingly, the present invention provides a semiconductor device such as a chip size package, bumps for external terminals formed on the surface thereof, and a method for covering the surface of the device on which these bumps are formed and exposing the end surfaces of the bumps. It is an object of the present invention to provide a method for easily manufacturing a semiconductor device including a sealing material layer formed on a substrate. It is also an object of the present invention to provide a semiconductor device manufactured by this method.

[0006]

SUMMARY OF THE INVENTION According to a method of manufacturing a semiconductor device of the present invention, a wafer provided with a bump for an external terminal is sealed by molding a sealing material so that an end face of the bump is exposed.
A method of manufacturing a semiconductor device by cutting into individual elements, wherein a wafer on which a reactive sealing material is placed is placed on a molding support, and a release film is placed on the reactive sealing material. And molding the sealing material by applying temperature and pressure through the wafer and the release film to spread the sealing material on the surface of the wafer, and the reaction rate of the sealing material at this molding temperature. Is performed for a time period of 30% or more and less than 100%, and then the sealing material is cooled and the release sheet is peeled off, whereby the wafer is sealed with the sealing material so that the bump end surfaces are exposed. I do.

According to the semiconductor device of the present invention, a semiconductor element, bumps for external terminals formed on the surface of the semiconductor element, and a sealing material are formed so as to cover the element surface on which these bumps are formed and to expose the end face of the bump. A semiconductor device comprising a sealing material layer formed in this way, a wafer on which a reactive sealing material is placed is disposed on a molding support, and a release film is formed on the reactive sealing material. Covering and molding the sealing material by applying temperature and pressure through the wafer and the peeling film to spread the sealing material on the wafer surface, the reaction rate of the sealing material at this molding temperature is reduced. It is characterized in that it is manufactured by peeling the release sheet after performing the time for 30% or more and less than 100%, and cutting the wafer into individual elements.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to the present invention is a semiconductor device having the same configuration as the chip size package described above with reference to FIG. 1, that is, a semiconductor element and external terminals formed on the surface thereof. And a sealing material layer formed so as to cover the element surface on which these bumps are formed and to expose the end faces of the bumps. On the exposed bumps, solder balls for connecting to a mounting substrate are provided. It is formed.

On the other hand, a semiconductor device according to the present invention
Instead of exposing the upper surface of the bump by exposing the encapsulant covering the bump by irradiating a laser beam or polishing the surface of the encapsulant as in the conventional method described with reference to FIG. A release film is placed on the powder or tablet-like sealing material placed on the wafer, and the temperature and pressure are applied through the wafer and the peeling film to spread the sealing material over the wafer surface and form the molding. Thereafter, the film is manufactured by peeling off the release film to form a sealing material layer while easily exposing the bump end faces.

This manufacturing method will be described with reference to FIG. First, as shown in FIG. 3A, a sealing material 33 is placed on a bump 32 formed on a wafer 31, and then a peeling film 34 is covered over the sealing material. Next, while applying a predetermined molding temperature and pressure, the sealing material 33 is compression-molded from above and below and spread, and the sealing material is poured between the bumps 32 and allowed to react, as shown in FIG. The sealing material layer 35 is formed as described above, and the release film 34 is brought into contact with the upper end surface of the bump 32. Bump 3 in FIG.
The amount of the sealing material 33 placed on the second 2 can be set to an amount that spreads between the bumps without covering the bump end surfaces by compression molding. The sealing material 33 may be a resin composition as described later, and reacts and cures at a molding temperature.
The sealing material layer 35 of FIG. 3B is formed. At this time, the reaction rate of the sealing material at the molding temperature is 30% or more and less than 100%,
More preferably, it becomes 60 to 95%, and when the reaction rate is reached, the release film 34 is peeled off,
The sealing material layer 38 is formed by exposing the upper end surface 37 of the bump (FIG. 3C). When peeling the release film,
Heating may be stopped, and cooling may be performed in addition to stopping the heating. The sealing material that may remain on the upper end surface of the bump during compression molding adheres to the release film and is removed. Next, as shown in FIG. 3D, solder balls 39 for connecting to the mounting substrate are formed on the bumps 32. Finally, as shown in FIG. 3E, the semiconductor wafer is cut and divided into individual chips, thereby forming the semiconductor element 40 and the external terminal bumps 32 formed on the surface thereof.
Then, a semiconductor device including a sealing material layer 38 formed so as to cover the element surface on which these bumps are formed and expose end surfaces of the bumps is completed.

As the reactive sealing material, a material which is once melted by heating, and undergoes a crosslinking reaction with time to be cured can be used. An example of a preferable sealing material in the present invention is a sealing material using an epoxy resin as a base resin. As described below, a sealing material containing an epoxy resin as a base resin generally contains a curing agent, an inorganic filler, a curing catalyst in addition to the epoxy resin of the base resin, and further contains other additional components. May be.

The epoxy resin useful as the base resin of the reactive sealing material used in the present invention is not particularly limited as long as it is a compound having two or more epoxy groups in one molecule. Examples of the epoxy resin that can be used in the present invention include, for example, cresol novolak type epoxy resin, phenol novolak type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, various novolak type epoxy resins synthesized from bisphenol A and resorcinol, and wires. Aliphatic epoxy resins, alicyclic epoxy resins, heterocyclic epoxy resins, halogenated epoxy resins, and the like.
Two or more epoxy resins may be used in combination.

A particularly preferred epoxy resin is a biphenyl type epoxy resin from the viewpoint of heat resistance and moisture resistance. In this sense, when two or more epoxy resins are used in combination depending on the application, it is advantageous to set the proportion of the biphenyl type epoxy resin in all the epoxy resins to 50% by weight or more.

[0014] A curing agent is usually blended into the sealing material having an epoxy resin as a base material. The curing agent is not particularly limited as long as it reacts with the epoxy resin to cure it. Specific examples include phenol novolak resins, cresol novolak resins, phenol aralkyl resins, trishydroxyphenylmethane, various novolak resins synthesized from bisphenol A and resorcinol, polyallylphenol, dicyclopentadienephenol, resole resins, polyvinylphenol, and the like. Examples include various polyhydric phenol compounds, acid anhydrides such as maleic anhydride, phthalic anhydride, and pyromellitic anhydride, and aromatic amines such as metaphenylenediamine, diaminodiphenylmethane, and diaminodiphenylsulfone. Among them, phenol compounds having two or more hydroxyl groups in one molecule are preferable from the viewpoint of adhesiveness, and phenol novolak resins and phenol aralkyl resins are particularly preferable. In some cases, two or more curing agents may be used in combination.

The encapsulant containing an epoxy resin as a base material may further contain a curing catalyst for accelerating the curing reaction between the epoxy resin and the curing agent. The curing catalyst is not particularly limited as long as it promotes the curing reaction. For example, 2-methylimidazole, 2,4-dimethylimidazole, 2-
Imidazole compounds such as methyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,4,6-tris (dimethylamino Tertiary amine compounds such as methyl) phenol, 1,8-diazabicyclo (5,4,0) undecene-7 and 1,5-diazabicyclo (4,3,0) nonene-5, zirconium tetramethoxide, zirconium tetra Organometallic compounds such as propoxide, tetrakis (acetylacetonato) zirconium, tri (acetylacetonato) aluminum, triphenylphosphine, trimethylphosphine,
Organic phosphine compounds such as triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, triphenylphosphine / triphenylborane, and tetraphenylphosphonium / tetraphenylborate are exemplified. Among them, triphenylphosphine, tetraphenylphosphonium tetraphenylborate and 1,8-diazabicyclo (5,4,0) undecene-7 are particularly preferably used from the viewpoint of reactivity. These curing catalysts may be used in combination of two or more depending on the use.

The encapsulant based on an epoxy resin is used as a filler, for example, amorphous silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia,
It may also include clay, talc, calcium silicate, titanium oxide, antimony oxide, asbestos, glass fibers, and the like. Among them, amorphous silica is preferably used because it is effective for reducing the stress of the sealing material. Examples of the amorphous silica include fused silica produced by fusing raw silica or synthetic silica produced by various synthetic methods, and crushed or spherical ones are used.

In addition to the above components, the encapsulant containing an epoxy resin as a base material may be an elastomer such as silicone rubber, olefin copolymer, modified nitrile rubber, modified polybutadiene rubber, modified silicone oil, or polyethylene, if desired. Such a thermoplastic resin may be included as a stress reducing agent. Such a stress reducing agent is effective in lowering the bending elastic modulus at room temperature of the formed sealing material layer.

Further, a sealing material containing an epoxy resin as a base material includes a flame retardant such as a halogen compound such as a halogenated epoxy resin and a phosphorus compound, a flame retardant auxiliary such as antimony trioxide, and an organic peroxide. And a colorant such as carbon black.

In the present invention, a material other than the epoxy resin, for example, a polyimide resin may be used as the base resin of the sealing material. Even in a sealing material having a base resin other than the epoxy resin, a curing agent, a curing catalyst, a filler, and other various components as described above can be optionally contained.

Regardless of the type of sealing material used, the components contained in the sealing material and the mixing ratio thereof may be determined appropriately according to the required characteristics of the semiconductor device.

The sealing material is usually provided in a powder or tablet form for sealing a semiconductor device. In the semiconductor device of the present invention, an unsealed wafer is prepared, a sealing material is placed thereon, a release film is further placed thereon, and these are sandwiched by a heated mold and compression molded. When the sealing material reaches a predetermined reaction rate, the wafer can be manufactured by peeling the release film to produce a wafer sealed with the sealing material and then dividing the wafer into individual chips. The compression molding is performed at a temperature of, for example, 120 to 250 ° C., preferably 150 to 200 ° C. when a sealing material having an epoxy resin as a base material is used. After peeling of the release sheet, additional heat treatment (post-curing) is performed, for example, for 15 minutes.
It should be performed at 0-200 ° C. for 5-12 hours.

If the sealing material having an epoxy resin as a base material is described as an example, the sealing material used in the present invention is once melted by heating, but the crosslinking reaction proceeds with time,
To cure. The temperature required for curing is usually 120-250
° C, preferably 150 to 200 ° C, and the time required for curing depends on the curing temperature. Further, the curing reaction rate at a constant temperature increases with the curing time, and finally the reaction rate becomes 10%.
At 0%, the reaction is completed, and the resin composition of the sealing material is completely cured. When the curing reaction is interrupted halfway, the sealant appears to be cured, but is brittle due to insufficient crosslinking. For example, when a sealing material is placed on a metal plate, a resin film is placed on the sealing material while heating, and pressure is applied, the sealing material spreads on the plate while melting, and the crosslinking reaction proceeds. And cure.

The temperature and time required to complete the cross-linking reaction cannot be specified unconditionally due to the raw materials and the composition ratio in the sealing material. However, in recent years, differential scanning calorimetry (DSC)
As a result, it became possible to analyze the relationship between the reaction temperature and time and the reaction rate in a chemical reaction. The inventors succeeded in understanding the relationship between the molding (crosslinking reaction or curing) temperature and time and the crosslinking reaction rate (curing rate) by applying this technology to the reaction analysis of the sealing material in the present invention. did. 4 and 5 show an example.

FIG. 4 is a differential scanning calorimetry (DSC) curve when the epoxy resin composition of the sealing material (see the following example) was heated at a constant rate (5 ° C./min). The relationship between the reaction temperature and the reaction time and the reaction rate can be calculated from the peak relating to the crosslinking reaction in FIG. To calculate this relationship, for example, the Bochart-Daniel method (Borchardt)
Known methods, such as and Daniels Method, can be used. FIG. 5 shows a curve obtained from the DSC curve of FIG. 4 using this method and showing the relationship between the crosslinking reaction time of the sealing material (epoxy resin composition) at 175 ° C. and the reaction rate. When the sealing material is cured at 175 ° C. while sandwiching the epoxy resin composition of the sealing material between the metal plate and the film as described above, the reaction rate of the epoxy resin is about 1 minute as shown in FIG. 100% cross-linking completely, and further heating (at 175 ° C for 2 minutes) increases the adhesive strength of the cured resin and increases the toughness of the resin. Will be very difficult. However, when the curing reaction is interrupted halfway and the reaction rate is set to 30% or more and less than 100% (when the heating time at 175 ° C. is set to 10 seconds or more and less than 60 seconds), the sealing material apparently hardens. However, it was discovered that the film was peeled while the material of the surface portion of the encapsulant layer was attached little by little due to the brittleness of the encapsulant layer due to incomplete crosslinking. The method of interrupting the reaction may be a method of stopping the heating, a method of forcibly cooling in addition to the stopping of the heating, for example, a method of rapidly cooling the sealing material during heat curing to room temperature for a predetermined time. In order to reduce the process time and to control the reaction rate well, it is preferable to adopt a reaction interruption method using forced cooling.

The present invention applies the above knowledge obtained by the inventors to the manufacture of a semiconductor device such as a chip size package. That is, after a tuple of a reactive sealing material is placed on a wafer on which bumps are formed, a release film is placed on the sealing material, and compression molding is performed while heating. At this time, the molding is interrupted at a molding time at which the reaction rate of the sealing material becomes 30% or more and less than 100%, preferably after rapidly cooling the molded product (the wafer on which the sealing material layer is formed) to room temperature, Peel the film immediately. At this time, since the sealing material on the surface is peeled off while adhering to the film, the sealing material on the bump can be peeled off to expose the bump surface. After peeling the film, additional heating should be performed to complete the crosslinking reaction of the encapsulant. Additional heating conditions are 150-200
C. for 5 to 12 hours is preferred.

The release film is not limited as long as it is a resin film. Nevertheless, the inventors have found that a polyimide film based on polyimide is particularly suitable as the release film in the present invention. For example, Kapton (manufactured by Toray DuPont Fluorochemicals), Apical (manufactured by Kaneka), Iupirex (manufactured by Ube Industries) and the like can be used. Although the peelability is inferior to these, polyethylene terephthalate (PET) film, polyethylene (PE) film,
Tedlar (trade name of DuPont) may be used.

Even if heating is continued until the reaction rate reaches 100% in the molding process, the film can be peeled off by cooling immediately after the heating. However, the ease of peeling is slightly inferior to the case where the reaction rate is less than 100%.

The molding temperature (or crosslinking reaction temperature or curing temperature) in the present invention refers to a temperature at which a sealing material covered with a release film is compression-molded to cause a crosslinking reaction, and is cured. In the description relating to the thermal analysis (DSC) curve, 175 ° C. corresponds to this temperature.
Usually, it is preferable that the heating plate, which is a forming support on which the wafer is disposed, is heated to the forming temperature before the wafer is placed.

As described above, the reaction rate (curing rate) in the present invention is obtained by analyzing a peak relating to a crosslinking reaction in a differential scanning calorimetry (DSC) curve, and using a known method such as the Boscha-Daniel method. It is a reaction rate calculated from the relationship between the reaction temperature and the reaction time and the reaction rate, calculated using the method.

In the present invention, the time when the reaction rate of the sealing material becomes 30% or more and less than 100% is defined as the time from the start of heating at the molding temperature of the sealing material to the reaction rate of the sealing material defined above. Is 30% or more and less than 100%. In the reaction rate curve illustrated in FIG. 5, the time when the reaction rate of the sealing material at 175 ° C. becomes 30% is about 10 seconds,
The time when the reaction rate is 100% is about 60 seconds, and the time when the reaction rate is 30% or more and less than 100% in this case is about 10 seconds or more and less than 60 seconds. Usually, the wafer on which the sealing material is placed is placed on a support (heating plate) preheated to the molding temperature, and the time measurement in this case starts from the time when the wafer is placed on the support (heating plate). Is done.

[0031]

EXAMPLES Next, examples of the present invention will be described, but needless to say, the present invention is not limited to these examples.

According to the method described above with reference to FIG.
A semiconductor device was manufactured. The encapsulant used for encapsulating the wafer was made of 100 parts by weight of a biphenyl-type epoxy resin (YX-4000H manufactured by Yuka Shell Epoxy) as a base resin,
94.1 parts by weight of p-xylylenephenol (XLC-225LL manufactured by Mitsui Toatsu Chemicals) as a curing agent, 5 parts by weight of a flexibility imparting agent (Clayton G-1901X manufactured by Shell Chemicals), a curing catalyst ( Triphenylphosphine).
The epoxy resin composition contained 6 parts by weight and a filler (FB-6S manufactured by Denki Kagaku Co., Ltd.) at 75% by weight of the entire sealing material. The DSC curve of this sealing material (by a 9900-type DSC apparatus manufactured by DuPont) is as shown in FIG. 4, and the reaction rate and reaction time at 175 ° C. (molding time) determined from this curve by Bosch-Daniel method. Time) was as shown in FIG. From this figure, it was assumed that the molding time corresponding to a reaction rate of 100% at a molding temperature of 175 ° C. of the used sealing material was 1 minute.

The wafer used was 8 inches in diameter (about 2 inches).
0 cm) and the size of each semiconductor device is 6 × 7 m
As m, 48 copper bumps having a diameter of 150 μm were provided for each semiconductor device. After placing the tablet of the sealing material on this wafer and placing the wafer on a heating plate heated to 175 ° C., a release film (Kapton manufactured by Du Pont-Toray Co., Ltd.) was placed thereon, and another heating plate was placed on the film. hand,
Compression molding was performed while heating. By changing the compression molding time at this time, the reaction rate of the sealing material is changed, heating is stopped immediately after reaching the time corresponding to the predetermined reaction rate, the wafer is rapidly cooled to room temperature, and the film is peeled off. Then, the relationship between the reaction rate and the film peeling property was evaluated. Table 1 shows the results. In the peelability results in the table,
A mark indicates that the sealing material remaining on the upper end surface of the bump adhered to the film by peeling the film and was completely removed, and the upper end surface of the bump was exposed. A cross mark indicates that the upper end surface of the bump was not exposed. It was sufficient. More specifically, according to the present invention, the reaction rate is 30% or more and 100% or more.
When it was less than 3, the upper end surface of the bump was completely exposed, whereas in Comparative Example 1 (reaction rate 20%), the curing of the encapsulant was insufficient, and the entire encapsulant was applied to the peeled film. In Comparative Example 2 (heating for another 2 minutes after reaching a reaction rate of 100%), the film was firmly bonded to the sealing material layer, and when the film was to be peeled off, the film was adhered. It has been destroyed.

[0034]

[Table 1]

[0035]

As described above, according to the present invention,
Such as a chip size package including a semiconductor element, bumps for external terminals formed on the surface thereof, and a sealing material layer formed so as to cover the element surface on which these bumps are formed and to expose the end face of the bump. The semiconductor device can be easily manufactured without requiring extra facilities and cumbersome operations such as laser light irradiation and polishing for removing a sealing material covering the upper end surface of the bump.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a chip size package.

FIG. 2 is a diagram illustrating a conventional method for manufacturing a chip size package.

FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 4 is a graph showing a differential scanning calorimetry (DSC) curve of the sealing material.

FIG. 5 shows 175 ° C. obtained from the analysis of the DSC curve in FIG.
6 is a graph showing the relationship between the reaction rate of the sealing material and the reaction time in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Chip size package 2 ... Semiconductor chip 3 ... Bump 4 ... Solder ball 5 ... Sealing material layer 31 ... Wafer 32 ... Bump 33 ... Sealing material 34 ... Peeling film 35, 38 ... Sealing material layer 37 ... On a bump End face 39: solder ball 40: semiconductor element

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Norio Fukasawa 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Limited (72) Inventor Muneichi Morioka 4-chome, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa No. 1 Fujitsu Limited F term (reference) 4M105 FF04 GG17 GG19

Claims (8)

[Claims] 1. A method of manufacturing a semiconductor device by forming a sealing material on a wafer having bumps for external terminals so as to expose a bump end face, sealing the wafer, and cutting the individual elements. Then, the wafer on which the reactive sealing material is placed is placed on a molding support, a release film is placed on the reactive sealing material, and the temperature and the temperature are set via the wafer and the release film. The molding of the sealing material by applying pressure to spread the sealing material on the surface of the wafer is performed for a time period at which the reaction rate of the sealing material at this molding temperature is 30% or more and less than 100%. A method for manufacturing a semiconductor device, comprising cooling a sealing material and peeling off a release sheet to seal the wafer with the sealing material so that the bump end surfaces are exposed. 2. The method according to claim 1, wherein the sealing material is an epoxy resin, a curing agent,
The method of claim 1, wherein the composition comprises a filler and a curing catalyst. 3. The method according to claim 1, wherein the sealing material is molded only for a time when the reaction rate of the sealing material at the molding temperature is 30% or more and less than 100%, and then the sealing material is forcibly cooled immediately. 2. The method according to 2. 4. The method according to claim 1, wherein additional heating of the encapsulant is performed after peeling off the film. 5. The method according to claim 1, wherein the additional heating is performed at 150 to 200 ° C. for 5 hours.
5. The method of claim 4, wherein the method is performed for up to 12 hours. 6. The method according to claim 1, wherein the release film is a polyimide-based film. 7. The method according to claim 1, wherein a reaction rate of the sealing material at the molding temperature is 60 to 95%. 8. A semiconductor device, bumps for external terminals formed on the surface of the semiconductor device, and a sealing material formed by molding a sealing material so as to cover the surface of the device on which the bumps are formed and to expose the end surface of the bump. A semiconductor device including a stopper layer, a wafer on which a reactive encapsulant is placed is disposed on a molding support, and a release film is placed on the reactive encapsulant. The encapsulant is formed by spreading the encapsulant on the surface of the wafer by applying temperature and pressure through the release film, and the reaction rate of the encapsulant at this molding temperature is 30% to 100%. After going for less than
A semiconductor device manufactured by peeling off a release sheet and cutting the wafer into individual elements.