JP2000057529A - Magnetoresistance effect type magnetic sensing element, magnetoresistance effect type magnetic head, and manufacturing methods thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magneto-resistance effect type magnetic sensing element and a magneto-resistance effect type magnetic head which can easily form a stabilizing portion for stabilizing an MR film, and a method of manufacturing the same. SOLUTION: The magnetoresistive effect type magnetic sensing element of the present invention is formed on a magnetoresistive effect film formed in a predetermined shape and at least one end of the magnetoresistive effect film. And a stabilizing section for stabilizing, wherein the stabilizing section is formed by oxidizing the magnetoresistive film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-resistance effect type magnetic sensing element, a magneto-resistance effect type magnetic head, and a method of manufacturing the same.

[0002]

2. Description of the Related Art With the increase in density of magnetic recording, a magnetoresistive effect type magnetic head (hereinafter referred to as an MR head) capable of obtaining a high output has been used as a reproducing magnetic head. . Usually, an MR head is manufactured such that the direction of the easy axis of magnetization of the magnetoresistive film is substantially parallel to the surface facing the magnetic recording medium.

However, when a magnetoresistive film is formed into a predetermined shape to form a magnetoresistive effect element (hereinafter referred to as an MR element), the magnetic field induced by the dispersion in the direction of the axis of easy magnetization and the shape of the MR element. Due to anisotropy, the direction of the easy axis of magnetization may not be substantially parallel to the surface facing the magnetic recording medium. Reading the signal magnetic flux in this state causes noise in the reproduced signal due to discontinuous movement of the domain wall or the like.

To prevent this, a hard magnetic film or an antiferromagnetic film is laminated on the MR element, or the hard magnetic films 50a and 50b are arranged on the side of the MR element 51 as shown in FIG. The direction of the axis of easy magnetization of the element 51 is fixed so as to be substantially parallel to the surface facing the magnetic recording medium. This allows MR
The element 51 is magnetically stabilized.

As the track width becomes narrower, as a method for stabilizing such an MR element, it is difficult to form a bonding surface between the MR element 51 and the hard magnetic films 50a and 50b perpendicular to the substrate 52. Therefore, as shown in FIG.
It has been proposed to form the joining surface between the MR element 51 and the hard magnetic films 50a and 50b obliquely with respect to the substrate 52 (Japanese Patent Application Laid-Open No. H3-125311). MR element 51 and hard magnetic film 5
By forming the bonding surface between the MR element and the hard magnetic film obliquely with respect to the substrate 52 and increasing the bonding area between the MR element and the hard magnetic film, the electrical continuity and the magnetic continuity between the MR element and the hard magnetic film are increased. As a result, the MR element can be more effectively stabilized by increasing the continuity of the element.

[0006]

However, when the above-described process is performed, complicated processes such as control of the angle of the bonding surface and control of the amount of overlap of the hard magnetic film on the MR element are required. . In addition, this method uses the MR
It can be used when the element is made of an anisotropic magnetoresistive film or a so-called spin valve film, and has only one magnetic field sensing layer for sensing a signal magnetic field from a magnetic recording medium. Cannot be used when there are a plurality of.

For example, in a giant magnetoresistive (GMR) film having a plurality of magnetic field sensing layers, antiferromagnetic coupling occurs between the stacked ferromagnetic layers, and the magnetization directions of adjacent layers are antiparallel to each other. It has become. Therefore, the magnetization direction of each layer constituting the GMR film cannot be directed to only one direction.

In addition, the stabilizing portion is arranged on the side surface of each layer constituting the GMR film having a multilayer structure, and each of the layers is magnetized in an anti-parallel state. This means that the thickness of each layer constituting the GMR film is large. It is not realistic considering that the thickness is about 2 nm.

The present invention has been proposed in view of such a conventional situation, and has a magnetoresistive effect type magnetosensitive element and a magnetoresistive element which can easily form a stabilizing portion for stabilizing an MR film. It is an object of the present invention to provide an effect type magnetic head and a method for manufacturing the same.

[0010]

According to the present invention, there is provided a magnetoresistive effect type magnetic sensing element comprising: a magnetoresistive effect film formed in a predetermined shape;
A stabilizing portion formed at at least one end of the magnetoresistive effect film and magnetically stabilizing the magnetoresistive effect film, wherein the stabilizing portion is formed by oxidizing the magnetoresistive effect film. Features.

In the magneto-resistance effect type magneto-sensitive element according to the present invention as described above, the stabilizing portion formed by oxidizing the magneto-resistance effect film is formed at least at one end of the magneto-resistance effect film. Thus, the magnetoresistive film is magnetically stabilized.

The magnetoresistive head of the present invention is a magnetoresistive head having a magnetoresistive sensing element sandwiched between a pair of soft magnetic materials via a nonmagnetic material.
The magneto-resistance effect type magneto-sensitive element has a magneto-resistance effect film formed in a predetermined shape, and a stabilizing portion formed at at least one end of the magneto-resistance effect film and magnetically stabilizing the magneto-resistance effect film. Wherein the stabilizing section is formed by oxidizing the magnetoresistive film.

In the above-described magnetoresistive head according to the present invention, since the stabilizing portion formed by oxidizing the magnetoresistive film is formed at least at one end of the magnetoresistive film, The magnetoresistive film is magnetically stabilized.

According to the method of manufacturing a magnetoresistive element of the present invention, there is provided a film forming step of forming a magnetoresistive film having a predetermined shape, and oxidizing the magnetoresistive film formed in the film forming step. And an oxidation step of forming stabilizing portions for magnetically stabilizing the magnetoresistive film at both ends of the magnetoresistive film.

In the method of manufacturing a magneto-resistance effect type magneto-sensitive element according to the present invention as described above, a stabilizing portion for magnetically stabilizing the magneto-resistance effect film is formed by oxidizing the magneto-resistance effect film. Therefore, the stabilizing portion is easily formed.

According to the method of manufacturing a magnetoresistive head of the present invention, there is provided a film forming step of forming a magnetoresistive film having a predetermined shape, and a part of the magnetoresistive film formed in the film forming step. An oxidation step of forming stabilizing portions for magnetically stabilizing the magnetoresistive effect film at both ends of the magnetoresistive effect film by oxidizing the film.

In the method of manufacturing a magneto-resistance effect type magnetic head according to the present invention as described above, a stabilizing portion for magnetically stabilizing the magneto-resistance effect film is formed by oxidizing the magneto-resistance effect film. Therefore, the stabilizing portion is easily formed.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS <First Embodiment> An embodiment of the present invention will be described below.

FIG. 1 shows an MR manufactured by applying the present invention.
FIG. 3 is a cross-sectional view schematically illustrating one configuration example of a head. In addition,
FIG. 1 is a cross-sectional view of the MR head in a plane parallel to a surface facing the magnetic recording medium, and shows only an enlarged portion near a portion to be a magnetically sensitive portion.

The MR head 1 includes a substrate 2, a first insulating film 3 formed on the substrate 2, a first soft magnetic film 4 formed on the first insulating film 3, A second insulating film 5 formed on the soft magnetic film 4 and an MR head element 6 formed on the second insulating film 5 and serving as a magneto-sensitive element of the MR head 1
And a third insulating film 7 formed on the MR head element 6
And a second soft magnetic film 8 formed on the third insulating film 7
And a protective film 9 formed on the second soft magnetic film 8.

The substrate 2 is made of a hard non-magnetic material such as, for example, Al ₂ O ₃ —TiC. The second insulating film 5 is made of M
The third insulating film 7 serves as an upper layer gap of the MR head 1 and serves as a lower layer gap of the R head 1. The first soft magnetic film 4 serves as a lower shield of the MR head 1, and the second soft magnetic film 8 serves as an upper shield of the MR head 1. The protective film 9 is for protecting the MR head 1.

The MR head element 6 is sandwiched between the first soft magnetic film 4 and the second soft magnetic film 8 via the second insulating film 5 and the third insulating film 7.

FIG. 2 is a perspective view schematically showing one configuration example of the MR head element 6 used in the MR head 1. As shown in FIG. The MR head element 6 is formed on an MR element section 10 having a substantially rectangular plane and arranged so that its longitudinal direction is substantially parallel to the surface facing the magnetic recording medium, and at both ends in the longitudinal direction of the MR element section 10. And the lead conductors 12a and 12b derived from the MR element section 10 and the stabilizing sections 11a and 11b. And this MR
The head 1 is a so-called horizontal MR head, which is arranged so that the longitudinal direction of the MR element unit 10 is substantially parallel to the surface facing the magnetic recording medium.

The MR element section 10 is provided, for example, with an MR element having a magnetoresistance effect, a SAL (Soft Adjacent Layer) film for applying a vertical bias magnetic field to the MR element, and an MR element and the SAL film. And an insulating film.

Known soft magnetic materials can be used for the MR element. Among them, NiFe, NiFeC
o, permalloy NiFe-X (X is Ta, Cr, N
b, Rh, Zr, Mo, Al, Au, Pd, Pt, Si
Etc. Further, X may contain a plurality of these elements. ), Etc., are preferred.
As will be described later, by oxidizing a part of the MR element, a stabilizing unit 11 for magnetically stabilizing the MR element is provided.
a and 11b are formed. By using a soft magnetic material containing Fe as the material of the MR element, the magnetization characteristics of the stabilizing portions 11a and 11b obtained by oxidizing a part of the MR element are made to have large residual magnetization and coercive force. The element can be more effectively stabilized.

The stabilizing portions 11a and 11b are provided at both ends in the longitudinal direction of the MR element portion 10. The stabilizing portions 11a and 11b have a larger coercive force and remanent magnetization than the MR element, and fix the magnetization direction of the MR element under the influence of the magnetic field from the stabilizing portions 11a and 11b. Stabilizes in a magnetic domain state. As a result, the magnetoresistive characteristics of the MR element are stable without any hysteresis, and the occurrence of Barkhausen noise can be prevented.

In the conventional MR head, such stabilizing portions 11a and 11b are formed by forming hard magnetic films on both sides of the MR element portion 10.
By oxidizing both ends of the element, the MR element 10
Are formed on both sides. As shown in an experimental example described later, an MR element was formed, and Fe
By oxidizing a soft magnetic material containing, the coercive force and the residual magnetization of the oxidized portion increase.

By oxidizing both ends of the MR element, the MR
The stabilizing portions 11a and 11b can be formed more easily than forming hard magnetic films on both sides of the element. Further, since the stabilizing portions 11a and 11b are formed integrally with the MR element, the electrical continuity and the magnetic connectivity between the MR element and the stabilizing portions 11a and 11b are improved.

The lead conductors 12a and 12b are made of a conductive film, and include the MR element section 10 and the stabilizing sections 11a and 11b.
This is an electrode for supplying a sense current to the device. One ends of the lead conductors 12a and 12b are connected to the stabilizing portions 11a and 11b.
b and the stabilizing portions 11a and 11b and the MR element portion 10 via the lead conductors 12a and 12b.
Is supplied with a sense current. In addition, the lead conductor 12
External terminals (not shown) for electrically connecting to the outside are formed at the other end of the terminals a and 12b.

When reading a recording signal from a magnetic recording medium using such an MR head 1,
A sense current is supplied to the MR element unit 10 from the external terminals formed at one ends of the a and 12b via the lead conductors 12a and 12b, and the sense current flows in the longitudinal direction of the MR element unit 10. Based on the sense current, a change in resistance of the MR element caused by a magnetic field from the magnetic recording medium is detected, thereby reproducing a recording signal from the magnetic recording medium. In the MR head 1, the stabilizing units 11a and 11b
Since the MR element is magnetically stabilized by the
The displacement of the domain wall in the R element can be eliminated, and the occurrence of Barkhausen noise can be prevented.

Next, a method for manufacturing such an MR head 1 will be described.

First, as shown in FIG. 3, for example, Al ₂ O ₃
A first insulating film 3 is formed on a substrate 2 made of a non-magnetic material such as TiC, and a first soft magnetic film 4 is formed on the first insulating film 3;
Is formed. Further, a second insulating film 5 is formed on the first soft magnetic film 4.

Next, as shown in FIG. 4, a third insulating film 7 is formed.
A magnetoresistive film 10a to be the MR element section 10 is formed thereon. Specifically, for example, a NiFe film is formed by, for example, about 45
and a SAL on the NiFe film.
A film is formed to form a magnetoresistive effect film 10a.

Next, as shown in FIG. 5, a photoresist 13 is applied on the magnetoresistive film 10a, and is patterned by photolithography to form portions to be the MR element portion 10 and the stabilizing portions 11a and 11b. Only a resist pattern in which the resist remains is formed. Specifically, for example, 2 μm is set at a predetermined position on the magnetoresistive film 10a.
The resist pattern is a resist pattern in which the resist is left in a rectangular shape of m × 2 μm.

Next, as shown in FIG. 6, using the resist pattern as a mask, the magnetoresistive film 10a exposed from the mask is removed by ion beam etching. After that, by removing the photoresist 13, the magnetoresistive effect film 10a is processed into a rectangular shape of, for example, 2 μm × 2 μm.

Next, as shown in FIG. 7, another photoresist 14 is newly applied over the entire surface and patterned by photolithography to form a stabilizing portion 11.
A resist pattern is formed in which portions of the resists a and 11b are removed. Specifically, 0.5 μm × 2 μm is applied to both ends of the magnetoresistive film 10 a processed into a rectangular shape.
The resist pattern has a rectangular opening of μm.

Here, a portion between the two openings is a portion to be the MR element portion 10 which is a magnetic sensing portion of the magnetic head.
That is, the reproduction track width is determined by the interval between these two openings. The reproduction track width is, for example, 1 μm
And

Next, as shown in FIG. 8, O is applied to the magnetoresistive film 10a by using, for example, a sputtering apparatus.
₂ By performing sputtering, the portion of the magnetoresistive film 10a exposed from the mask is plasma-oxidized (H, V. Boeing: Fundamentals of Plasma chemistry and T
echnology / Technomic Publishing inc.co P229-P240 (1
998)). The conditions for the plasma oxidation are, for example, a flow rate of the O ₂ gas of about 20 sccm and an RF power of about 300 W. At this time, the sputtering time is, for example, about 3 minutes.

Then, by removing the photoresist 14 and magnetizing the stabilizing portions 11a and 11b, the MR element 10 and the M
Stabilizing portions 11a and 11b for stabilizing the R element are formed.

Next, as shown in FIG. 9, by forming a conductive film and patterning the conductive film into a predetermined shape, the lead conductors 12a and 12b for supplying a sense current to the MR element portion 10 are formed. By forming MR
The head element 6 is formed.

Then, on the MR head element 6, the third
Is formed on the third insulating film 7, and
A second soft magnetic film 8 serving as an upper shield of the R head 1,
Protective film 9 for protecting MR head 1 on second soft magnetic film 8
And are formed. Finally, by etching, polishing, etc.
By forming the surface facing the magnetic recording medium, the MR head 1 as shown in FIG. 1 is manufactured.

Experimental Example Next, an experimental example will be described in which the change in the magnetization characteristics of the magnetoresistive film before and after the oxidation of the magnetoresistive film is examined.

For the magnetoresistive film, the content of Fe was 2
A NiFe film of 0% is formed to a thickness of 5 nm,
The Fe film was plasma-oxidized. In plasma oxidation, O ₂ gas is introduced into the sputtering apparatus at a flow rate of 20 sccm,
The RF power was set to 300 W, and the NiFe film was sputtered for 3 minutes.

The NiFe film is subjected to a plasma oxidation treatment before and after the plasma oxidation treatment.
The change of the magnetization characteristics was examined.

FIG. 10 shows NiFe before plasma oxidation treatment.
FIG. 11 is a magnetization curve of the NiFe film after the plasma oxidation treatment. From FIGS. 10 and 11,
It is apparent that the coercive force is significantly increased after the plasma oxidation treatment. In addition, this is 200 ℃ ~ 300 ℃
By performing the heat treatment, a larger coercive force can be obtained.

These are N, which is a material of the magnetoresistive film.
It is considered that Fe in iFe was oxidized to form Fe ₂ O ₃ or Fe ₃ O ₄ used as a magnetic material. Further, the coercive force after the oxidation treatment depends on the Fe content in the magnetoresistive film, and the larger the Fe content, the larger the coercive force. Such an increase in coercive force due to plasma oxidation was obtained not only for the NiFe film but also for the CoFe film.

Therefore, it was found that a higher coercive force can be obtained by oxidizing the MR film made of NiFe than the MR film. Therefore, a stabilizing portion for magnetically stabilizing the MR element can be obtained by oxidizing a part of the MR element without providing a step of forming a hard magnetic film at both ends of the MR element.

<Second Embodiment> Next, another embodiment of the present invention will be described.

FIG. 12 is a cross-sectional view schematically showing one configuration example of the MR head according to the present embodiment in a plane perpendicular to the surface facing the magnetic recording medium.

The MR head 20 includes a substrate 21 made of a non-magnetic material and a first insulating film 2 formed on the substrate 21.
2, a first soft magnetic film 23 formed on the first insulating film 22, a second insulating film 24 formed on the first soft magnetic film 23, And an MR head element 25 serving as a magneto-sensitive element of the MR head 20, a third insulating film 26 formed on the MR head element 25, and a second insulating film 26 formed on the third insulating film 26. The soft magnetic film 27 and the second
And a protective film 28 formed on the soft magnetic film 27.

The substrate 21 is made of a hard non-magnetic material such as Al ₂ O ₃ —TiC. Second insulating film 24
Is the lower layer gap of the MR head 20, and the third
The insulating film 26 becomes an upper layer gap of the MR head 20. The first soft magnetic film 23 serves as a lower shield of the MR head 20, and the second soft magnetic film 27 serves as an upper shield of the MR head 20. In addition, protective film 2
Numeral 8 is for protecting the MR head 20. The MR head element 25 includes the second insulating film 24 and the third
Is sandwiched between the first soft magnetic film 23 and the second soft magnetic film 27 with the insulating film 26 interposed therebetween.

FIG. 13 shows the M used in the MR head 20.
FIG. 4 is a perspective view schematically showing one configuration example of an R head element 25. The MR head element 25 is provided with a spin-valve MR element (hereinafter, referred to as an SV-type MR element) 30 having a substantially rectangular plane and arranged so that the longitudinal direction thereof is substantially perpendicular to the surface facing the magnetic recording medium. Stabilizing portions 31a and 31b formed at both ends in the short side direction of the SV type MR element 30,
A rear electrode 32 connected to one longitudinal end (hereinafter referred to as a rear end for convenience) of the SV type MR element 30;
A front end electrode 33 connected to the other end of the SV type MR element 30 (herein referred to as a front end for convenience). The MR head 20 is arranged such that the longitudinal direction of the MR element is substantially parallel to the surface facing the magnetic recording medium, and the front end of the SV type MR element 30 is located on the side facing the magnetic recording medium. This is a so-called vertical MR head in which the SV type MR element 30 is arranged so as to be as follows.

The SV type MR element 30 basically has the structure shown in FIG.
As shown in FIG. 4, the antiferromagnetic layer 34 and the first ferromagnetic layer 3
5, a non-magnetic layer 36, and a second ferromagnetic layer 37 have a four-layer structure in which they are stacked in this order. The first ferromagnetic layer 35 and the second ferromagnetic layer 37 are separated from each other by the nonmagnetic layer 36, and the antiferromagnetic layer 34 is provided in contact with the first ferromagnetic layer 35. The second ferromagnetic layer 37 in contact with the first ferromagnetic layer 37 is magnetized in a certain direction (hereinafter, such a first ferromagnetic layer is referred to as a pinned layer). On the other hand, the second ferromagnetic layer 37 separated by the nonmagnetic layer 36 does not have a fixed magnetization direction (hereinafter, such a second ferromagnetic layer is referred to as a free layer). That is, the pinned layer 35 has a large coercive force, and the free layer 37 has a small coercive force.

The SV type MR element 30 having the above configuration
When the magnetic field is applied to the free layer 37, the free layer 37 is magnetized, and the magnetization direction is determined. When the magnetization direction of the free layer 37 is 180 ° opposite to the magnetization direction of the pinned layer 35, the resistance of the SV type MR element 30 becomes maximum. On the other hand, when the magnetization directions of the free layer 37 and the pinned layer 35 are the same, the resistance of the SV type MR element 30 becomes minimum. Therefore, in the above-described MR head element 25, the external magnetic field is detected using the resistance change of the SV type MR element 30.

A known soft magnetic material can be used for the free layer 37 and the pinned layer 35. The free layer 37 is made of a soft magnetic material containing Fe, and the pinned layer 35 is made of Fe. It is preferable to use a soft magnetic material which is not used.

As will be described later, the SV type MR element 30
Of the SV type MR element 30
Stabilizing section 31a for magnetically stabilizing free layer 37 of
31b is formed. By using a soft magnetic material containing Fe as the material of the free layer 37, the magnetization characteristics of the stabilizing portions 31a and 31b obtained by oxidizing a part of the free layer are increased in coercive force and residual magnetization, The free layer 37 can be more effectively stabilized.

At this time, if the pinned layer 35 contains Fe, a hard magnetic portion having a higher height than the pinned layer 35 is formed on both sides of the pinned layer 35. Pin layer 35
The magnetization direction is fixed in a predetermined direction by exchange coupling with the antiferromagnetic layer 34. However, if hard magnetic portions exist on both sides of the pinned layer 35, the pinned layer 35 and the antiferromagnetic layer 34 This hinders exchange coupling, and the magnetization direction of the pinned layer 35 is not fixed. As described above, in the SV type MR element 30, the electric resistance that changes depending on the angle between the magnetization direction of the pinned layer 35 and the magnetization direction of the free layer 37 is detected. Therefore, if the magnetization direction of the pinned layer 35 is not fixed, the information signal from the magnetic recording medium cannot be correctly detected.
Therefore, a material containing Fe is used for the free layer 37, but a material not containing Fe is preferably used for the pinned layer 35.

However, even if a material containing Fe is used for the pinned layer, the process time and the oxidizing power (for example, O
The same characteristics can be obtained by controlling the oxidized depth by controlling the ( ₂ sputtering time, O ₂ sputtering time, etc.).

Specific examples of the material of the free layer 37 include NiFe, NiFeCo, and permalloy NiFe.
-X (X is Ta, Cr, Nb, Rh, Zr, Mo, A
1, Au, Pd, Pt, Si and the like. Further, X may contain a plurality of these elements. ) And the like. Specifically, the material of the pin layer 35 is, for example, C
o and the like. Further, as the nonmagnetic layer 36, C
u, CuNi, CuAg and the like can be used. Further, as the antiferromagnetic layer 34, IrMn, RhMn, PtMn, F
eMn, CrMnPt, NiO, NiCoO and the like can be used.

As shown in FIG. 14, the stabilizing portions 31a and 31b are provided at both ends in the short side direction of the free layer 37 among the layers constituting the SV type MR element 30. The stabilizing portions 31a and 31b have a larger coercive force and a larger residual magnetization than the free layer 37, and
The magnetization direction of the free layer 37 is fixed by the influence of the magnetic field from 1b, and the free layer 37 is stabilized in a single magnetic domain state. As a result, the magnetoresistive characteristics of the SV type MR element 30 become stable without any hysteresis, and the occurrence of Barkhausen noise can be prevented.

Usually, such stabilizing sections 31a, 31b
Is formed by forming a hard magnetic film on both sides of the SV type MR element 30. In this MR head 20, free ends are formed by oxidizing both ends of the free layer 37 constituting the SV type MR element 30. Stabilizing portions 31a and 31b are provided on both sides of layer 37.
Is formed. By oxidizing both ends of the free layer 37, the stabilizing portions 31a and 31b can be formed more easily than forming hard magnetic films on both sides of the SV type MR element 30. Further, since the stabilizing portions 31a and 31b are formed integrally with the free layer 37, the magnetic connectivity between the free layer 37 and the stabilizing portions 31a and 31b is improved.

The rear end electrode 32 and the front end electrode 33 are made of a conductive film and are electrodes for supplying a sense current to the SV type MR element 30. One end of the rear electrode 32 and one end of the front electrode 33 are connected to the SV type MR element 30, and the other end of the rear electrode 32 and the front electrode 33 are connected to the outside for electrical connection. No external terminals are formed. Then, a sense current is supplied to the SV type MR element 30 via the rear end electrode 32 and the front end electrode 33.

When a recording signal is read from a magnetic recording medium using such a vertical MR head 20, an external terminal formed at one end of the rear end electrode 32 and one end of the front end electrode 33 is connected to the rear end. S from the electrode 32 toward the front end electrode 33
A sense current flows in the longitudinal direction of the V-type MR element 30. Then, based on the sense current, a change in resistance of the SV type MR element 30 caused by a magnetic field from the magnetic recording medium is detected, thereby reproducing a recording signal from the magnetic recording medium. In the MR head 20, the stabilizing sections 31a, 31a
Since the free layer 37 of the SV type MR element 30 is magnetically stabilized by b, the movement of the domain wall of the free layer 37 can be eliminated, and the generation of Barkhausen noise can be prevented.

In such an MR head 20, the stabilized portions 31a,
31b usually has a much higher electric resistance than the metal film constituting the SV type MR element 30, so that a reduction in output due to a shunt loss of the sense current does not pose a problem.

Next, a method for manufacturing such an MR head 20 will be described. 15 to 20 described later.
FIG. 3 is a cross-sectional view showing a manufacturing process of the MR head 20 in a plane parallel to a surface facing a magnetic recording medium.

First, as shown in FIG. 15, Al ₂ O ₃ -T
A first nonmagnetic film 22 and a first soft magnetic film 23 serving as a lower shield are formed on a substrate 21 made of a nonmagnetic material such as iC. Further, a second non-magnetic film 24 is laminated on the first soft magnetic film 23. This second non-magnetic film 24
The magnetic gap of the MR head 20 is formed.

Next, as shown in FIG. 16, a spin valve film 30a to be the SV type MR element 30 is formed on the non-magnetic layer. Specifically, NiO layer (40 nm) / Co layer (3 nm) / Cu layer (2.5 nm) / NiFe layer (5n
m) are formed in this order. Here, the NiO layer is the pinned layer 3
4 and the Co layer becomes the nonmagnetic layer 35. Further, the Cu layer becomes the non-magnetic layer 36, and the NiFe layer becomes the free layer 37.

Next, as shown in FIG. 17, a photoresist 38 is applied on the spin valve film 30a, and is patterned by photolithography to form a portion which becomes the SV type MR element 30 and the stabilizing portions 31a and 31b. Only a resist pattern in which the resist remains is formed.
Specifically, the resist pattern is a resist pattern in which a resist is left in a predetermined position on the spin valve film 30a in a rectangular shape of, for example, 2 μm × 2 μm.

Next, as shown in FIG. 18, using this resist pattern as a mask, the spin valve film 30a exposed from the mask is removed by ion beam etching. Thereafter, by removing the photoresist 38, the spin valve film 30a is processed into a rectangular shape of, for example, 2 μm × 2 μm.

Next, as shown in FIG. 19, another photoresist 39 is newly applied over the entire surface, and is patterned by photolithography to form a stabilizing portion 31.
A resist pattern is formed in which portions of the resists a and 31b are removed. More specifically, a 0.5 μm × 2
The resist pattern has a rectangular opening of μm.

Next, as shown in FIG. 20, the spin valve film 30a is oxidized by performing O ₂ sputtering on the spin valve film 30a using a sputtering apparatus. The sputtering conditions include, for example, a flow rate of O ₂ gas of about 20 sccm and an RF power of about 300 W. At this time, the sputtering time is, for example, about 3 minutes.

Then, the photoresist 39 is peeled off, and the stabilizing portions 31a and 31b are magnetized in the direction of the axis of easy magnetization, as shown in FIG.
0 and stabilizing portions 31a and 31b are formed on both sides of the free layer 37 of the SV type MR element 30.

Next, at the rear end of the SV type MR element 30,
A rear electrode 32 for providing a sense current to the SV type MR element 30 is formed. Thereafter, the SV type MR element 30
Then, a third insulating film 26 is formed on the rear end electrode 32.

Then, at the front end of the third insulating film 26, S
A front end electrode 33 for providing a sense current to the V-type MR element 30 is formed, a second soft magnetic film 27 serving as an upper shield is formed on the front end electrode 33, and a second soft magnetic film 27 is formed on the second soft magnetic film 27. By forming the protective film 28, the vertical MR head 20 as shown in FIG. 12 is completed.

Although the above-described SV type MR element 10 has only one magnetosensitive layer, it is a GMR element having a giant magnetoresistive effect by taking a multilayer structure, and has a plurality of magnetosensitive layers. Even in the case of having the magnetic sensing part layer, it is possible to stabilize the magnetic sensing part layer. In this case, the Fe-containing layer is magnetically stabilized by alternately arranging the Fe-containing layer and the Fe-free layer, and oxidizing both ends of the Fe-containing layer. A stabilizing portion is formed. The layer containing Fe is stabilized by the stabilizing portions formed at both ends, and the layer not containing Fe is Fe
Is stabilized by magnetic coupling with a layer containing.

More specifically, for example, the GMR element 40 shown in FIG.
A layer 42, a Cu layer 43 having a thickness of 2 nm, and a thickness of 1.5
nm Co layers 44 are alternately laminated. In the GMR film 40, the NiFe layer 42 and the Co layer 44 become the magnetic sensing layer. Then, by oxidizing both ends of the GMR element, the stabilizing portions 4 are formed at both ends of the NiFe layer 42.
5a and 45b are formed. And this GMR element 4
0, the NiFe layer 42 is stabilized by the stabilizing portions 45a and 45b formed on both ends thereof,
Is stabilized by magnetic coupling with the NiFe layer 42.

As described above, according to the present invention, even in a GMR element having a plurality of magnetic sensing layers, it is possible to arrange stabilizing sections at both ends of each of the plurality of sensing layers.

In the above-described embodiment, a horizontal MR head using an MR element made of a soft magnetic material having an anisotropic magnetoresistance effect and a vertical MR head using an SV type MR element having a giant magnetoresistance effect are used. Although the description has been given by taking the MR head as an example, the present invention is not limited to this, and is applicable to a vertical MR head using an MR element and a horizontal MR head using an SV type MR element. It is possible. further,
The magnetoresistive effect type magnetic sensing element of the present invention is not limited to a magnetic head that senses a magnetic field from a magnetic recording medium, but can be widely applied to a magnetic sensor that senses a magnetic field.

[0079]

According to the present invention, a stabilizing portion for stabilizing an MR element is formed without performing a complicated process. Furthermore, according to the present invention, a narrow track MR
The stabilizing portion can be formed relatively easily in the head.

Therefore, according to the present invention, the MR element can be sufficiently stabilized even if it is formed as a narrow track, and the generation of Barkhausen noise can be eliminated. It can be realized with a configuration.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing one configuration example of an MR head of the present invention.

FIG. 2 is a perspective view showing an example of an MR head element used in the MR head of FIG.

FIG. 3 is a diagram for explaining a method of manufacturing the MR head, and is a cross-sectional view showing a state where a first insulating film, a first soft magnetic film, and a second insulating film are formed on a substrate.

FIG. 4 is a diagram for explaining a method of manufacturing the MR head, and is a cross-sectional view showing a state where a magnetoresistive film is formed on a second insulating film.

FIG. 5 is a diagram illustrating a method for manufacturing the MR head, and is a cross-sectional view illustrating a state where a mask pattern is formed.

FIG. 6 is a diagram for explaining a method of manufacturing the MR head, and is a cross-sectional view showing a state where the magnetoresistive film is etched.

FIG. 7 is a view for explaining the method for manufacturing the MR head, and is a cross-sectional view showing a state where a new mask pattern is formed.

FIG. 8 is a cross-sectional view for explaining the method of manufacturing the MR head, and showing a state where stabilizing portions are formed on both sides of the magnetoresistive element.

FIG. 9 is a view for explaining the method for manufacturing the MR head, and is a cross-sectional view showing a state where a lead conductor is formed.

FIG. 10 is a diagram showing a magnetization curve of a NiFe film before oxidation.

FIG. 11 is a diagram showing a magnetization curve of a oxidized NiFe film.

FIG. 12 is a sectional view showing another configuration example of the MR head of the present invention.

FIG. 13 is a perspective view showing one configuration example of an MR head element used in the MR head of FIG.

14 is a cross-sectional view showing one configuration example of the SV type MR element of FIG.

FIG. 15 is a diagram for explaining a method of manufacturing an MR head.
FIG. 3 is a cross-sectional view showing a state where a first insulating film, a first soft magnetic film, and a second insulating film are formed on a substrate.

FIG. 16 is a diagram illustrating a method of manufacturing the MR head,
FIG. 4 is a cross-sectional view showing a state where a spin valve film is formed on a second insulating film.

FIG. 17 is a diagram for explaining a method of manufacturing the MR head.
FIG. 4 is a cross-sectional view showing a state where a mask pattern is formed.

FIG. 18 is a diagram for explaining a method of manufacturing an MR head.
FIG. 3 is a cross-sectional view showing a state where a spin valve film is etched.

FIG. 19 is a diagram illustrating a method of manufacturing the MR head.
FIG. 9 is a cross-sectional view showing a state where a new mask pattern is formed.

FIG. 20 is a diagram illustrating a method of manufacturing the MR head,
It is sectional drawing which shows the state which formed the stabilization part on both sides of the SV type MR element.

FIG. 21 is a cross-sectional view illustrating a configuration example of a GMR element according to the present invention.

FIG. 22 is a cross-sectional view illustrating a configuration example of a conventional MR element.

[Explanation of symbols]

1,20 MR head, 2,21 substrate, 3,22
A first insulating film; 4,23 a first soft magnetic film;
24 second insulating film, 6,25 MR head element,
7, 26 Third insulating film, 8, 27 Second soft magnetic film, 9, 28 protective film, 10 MR element, 30 SV
Type MR element, 11a, 11b, 31a, 31b Stabilizing unit

[Procedure amendment]

[Submission date] September 10, 1998 (1998.9.1)
0)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0058

[Correction method] Change

[Correction contents]

However, even if a material containing Fe is used for the pinned layer, the process time and the oxidizing power (for example, O
The same characteristics can be obtained by controlling the oxidized depth by controlling the ( ₂ sputtering time, O ₂ sputtering power, etc.).

[Procedure amendment 2]

[Document name to be amended] Drawing

[Correction target item name] FIG.

[Correction method] Change

[Correction contents]

FIG. 21

Claims (22)

[Claims] 1. A magneto-resistance effect film formed in a predetermined shape, and a stabilizing portion formed at at least one end of the magneto-resistance effect film and magnetically stabilizing the magneto-resistance effect film, The stabilizing section is a magnetoresistive effect type magnetic sensing element, wherein the magnetoresistive film is oxidized. 2. The magneto-resistance effect type magneto-sensitive element according to claim 1, wherein said magneto-resistance effect film contains Fe. 3. The giant magnetoresistive film having at least two ferromagnetic layers and at least one nonmagnetic layer laminated thereon and having a giant magnetoresistance effect. The magnetoresistive effect type magnetic sensing element according to claim 1, wherein: 4. The method according to claim 1, wherein the magnetoresistive film has at least a first
4. A magnetoresistive effect type magnetosensitive device according to claim 3, wherein the spin valve film is formed by laminating a ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer. element. 5. The magnetoresistive element according to claim 4, wherein the first ferromagnetic layer contains Fe, and the second ferromagnetic layer does not contain Fe. 6. A magnetoresistive magnetic head in which a magnetoresistive element is sandwiched between a pair of soft magnetic materials via a nonmagnetic material, wherein the magnetoresistive element is formed in a predetermined shape. A magnetoresistive effect film, and a stabilizing portion formed at at least one end of the magnetoresistive effect film and magnetically stabilizing the magnetoresistive effect film. A magnetoresistive head comprising a film oxidized. 7. The magnetoresistive head according to claim 6, wherein the magnetoresistive film contains Fe. 8. The giant magnetoresistive film having at least two ferromagnetic layers and at least one nonmagnetic layer laminated thereon and having a giant magnetoresistance effect. 7. A magnetoresistive head according to claim 6, wherein: 9. The method according to claim 1, wherein the magnetoresistive effect film has at least a first
9. A magnetoresistive head according to claim 8, wherein said spin valve film is formed by laminating a ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer. . 10. The first ferromagnetic layer contains Fe,
10. The magnetoresistive head according to claim 9, wherein the second ferromagnetic layer does not contain Fe. 11. A method of manufacturing a magneto-resistance effect type magnetic sensing element, comprising: a film forming step of forming a magneto-resistance effect film having a predetermined shape; and oxidizing the magneto-resistance effect film formed in the film forming step. An oxidizing step of forming stabilizing portions for magnetically stabilizing the magnetoresistive film at both ends of the magnetoresistive film. . 12. The method according to claim 11, wherein in said oxidizing step, said magnetoresistive film is oxidized by plasma oxidation. 13. The method according to claim 11, wherein the magnetoresistive effect film contains Fe. 14. The magneto-resistance effect film according to claim 1, wherein
12. A magnetoresistive magneto-sensitive film according to claim 11, wherein the magnetoresistive film is a giant magnetoresistive film having at least one ferromagnetic layer and at least one nonmagnetic layer laminated thereon and having a giant magnetoresistive effect. Device manufacturing method. 15. The magnetoresistive film is a spin valve film comprising at least a first ferromagnetic layer, a nonmagnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer. The method for manufacturing a magnetoresistive magneto-sensitive element according to claim 14, wherein: 16. The first ferromagnetic layer contains Fe,
16. The method according to claim 15, wherein the second ferromagnetic layer does not contain Fe. 17. A method for manufacturing a magnetoresistive magnetic head having a magnetoresistive effect magnetic sensing element, comprising: a film forming step of forming a magnetoresistive film having a predetermined shape; And oxidizing a part of the magnetoresistive film to form stabilizing portions for magnetically stabilizing the magnetoresistive film at both ends of the magnetoresistive film. Of manufacturing a magnetoresistive magnetic head. 18. The method according to claim 17, wherein in the oxidizing step, the magnetoresistive film is oxidized by plasma oxidation. 19. The method according to claim 17, wherein the magnetoresistive film contains Fe. 20. The magneto-resistance effect film according to claim 1, wherein
18. The magnetoresistive head according to claim 17, wherein the magnetoresistive head is a giant magnetoresistive film having at least one ferromagnetic layer and at least one nonmagnetic layer laminated thereon and having a giant magnetoresistance effect. Manufacturing method. 21. The magneto-resistance effect film is a spin valve film having at least a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer, and an antiferromagnetic layer laminated. 21. The method of manufacturing a magnetoresistive effect type magnetic head according to claim 20, wherein: 22. The first ferromagnetic layer contains Fe,
22. The method according to claim 21, wherein the second ferromagnetic layer does not contain Fe.