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JP2000044369A - Production of lanthanum chromite compact film - Google Patents

Production of lanthanum chromite compact film

Info

Publication number
JP2000044369A
JP2000044369A JP11122032A JP12203299A JP2000044369A JP 2000044369 A JP2000044369 A JP 2000044369A JP 11122032 A JP11122032 A JP 11122032A JP 12203299 A JP12203299 A JP 12203299A JP 2000044369 A JP2000044369 A JP 2000044369A
Authority
JP
Japan
Prior art keywords
film
ceramic substrate
lanthanum chromite
roughening treatment
compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11122032A
Other languages
Japanese (ja)
Inventor
Kenichi Hiwatari
研一 樋渡
Akira Ueno
晃 上野
Masanobu Aizawa
正信 相沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to JP11122032A priority Critical patent/JP2000044369A/en
Publication of JP2000044369A publication Critical patent/JP2000044369A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/50Fuel cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Fuel Cell (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a lanthanum chromite compact film, capable of forming the lanthanum chromite compact film, which can be easily attached to a large member and is useful for the interconnector of a solid electrolyte type fuel battery, in high productivity and at a low cost by subjecting the surface of a ceramic substrate compact in some extent to a roughening treatment and subsequently forming the lanthanum chromite compact film on the ceramic substrate by a wet method. SOLUTION: This method for producing a lanthanum chromite compact film comprises subjecting the surface of a ceramic substrate compact in some extent to a roughening treatment, subsequently repeatedly subjecting the treated ceramic substrate to processes each comprising dipping the treated ceramic substrate in a lanthanum chromite slurry and then drying the dipped ceramic substrate to form a coating film, and subsequently baking the formed coating film. The ceramic substrate compact in some extent preferably has a film thickness of <=200 μm, and the roughening treatment is preferably carried out by a method comprising blast-grinding the ceramic substrate so as to give the relation of the inequality: 0.01<=(t1-t2)/t1<=0.2 (t1 μm is a film thickness before the roughening treatment; t2 μm is a film thickness after the roughening treatment). The gas penetration flux Q of the ceramic substrate after the roughening treatment is preferably <=50 (m3/m2.hr.atm).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、固体電解質型燃料
電池のインターコネクターに好適なランタンクロマイト
緻密膜の形成方法に関する。特には、湿式法により気孔
率1%以下の緻密薄膜を得ることも可能なランタンクロ
マイト緻密膜の形成方法に関する。
The present invention relates to a method for forming a lanthanum chromite dense membrane suitable for an interconnector of a solid oxide fuel cell. In particular, the present invention relates to a method for forming a lanthanum chromite dense film capable of obtaining a dense thin film having a porosity of 1% or less by a wet method.

【0002】[0002]

【従来の技術】従来、特開昭61−153280号に見
られるように、円筒型セルタイプの固体電解質型燃料電
池のインターコネクター膜の作製方法としてCVD・E
VD法によって行われ、 同公報に見られるものを詳述
すると、以下の通りである。この方法においては、酸素
源を含む第一反応剤が基材物質中の小孔部を透過し、基
材の他面側のハロゲン化金属ガスと反応して、基材上に
金属酸化物の膜を形成する。反応生成物である金属酸化
物が基材上で成長するにつれて、化学的な蒸着(CV
D)により、反応生成物が基材中の複数の小孔部を密に
閉め切る。酸素源から成長途上の酸化物層を介する酸素
の移動が起こるので、塗膜は電気化学的蒸着(EVD)
により成長する。
2. Description of the Related Art Conventionally, as disclosed in JP-A-61-153280, CVD / E is used as a method for producing an interconnector film of a cylindrical cell type solid oxide fuel cell.
The details of what is carried out by the VD method and which is found in the publication are as follows. In this method, a first reactant containing an oxygen source permeates through pores in a base material, reacts with a metal halide gas on the other side of the base material, and forms a metal oxide on the base material. Form a film. As the reaction product metal oxide grows on the substrate, chemical vapor deposition (CV
According to D), the reaction product tightly closes the plurality of small holes in the substrate. The coating is deposited by electrochemical deposition (EVD) as the transfer of oxygen from the oxygen source through the growing oxide layer occurs.
Grow by.

【0003】[0003]

【発明が解決しようとする課題】従来のCVD・EVD
法では、密着性の良い緻密膜を形成するのに適してい
る。しかし、成膜を大気と遮断された特殊な雰囲気・物
理条件下で行う必要があるため、高価な装置を必要とす
る。大型の部材用には、当然その部材を収容可能な大型
の装置を必要とする。そのため、大形部材への膜付けが
困難で、かつ生産性も低く、高コストである。また、C
VD・EVDでは、形成する膜の材料の組成が限定され
る。
SUMMARY OF THE INVENTION Conventional CVD / EVD
The method is suitable for forming a dense film having good adhesion. However, it is necessary to perform the film formation under a special atmosphere and physical conditions shielded from the atmosphere, so that an expensive apparatus is required. For a large member, a large device capable of accommodating the member is required. Therefore, it is difficult to apply a film to a large-sized member, the productivity is low, and the cost is high. Also, C
In VD / EVD, the composition of the material of the film to be formed is limited.

【0004】本発明は、上記CVD・EVD法の大形部
材への膜付けが困難で、かつ生産性も低く、高コストで
あるという課題を解決するためになされたもので、本発
明の目的は、大形部材への膜付けが容易で、かつ生産性
も高く、低コストな湿式法によっても、緻密なランタン
クロマイト膜を得ることのできるランタンクロマイト緻
密膜の形成を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made to solve the problems that it is difficult to form a film on a large-sized member by the CVD / EVD method, the productivity is low, and the cost is high. An object of the present invention is to provide formation of a dense lanthanum chromite film that can easily obtain a dense lanthanum chromite film even by a low-cost wet method, in which the film can be easily applied to a large-sized member and the productivity is high.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
になされた本発明は、ある程度緻密なセラミック基体上
に、湿式法でランタンクロマイトの緻密膜を作製する方
法において、基体の表面を粗面化処理し、この上にラン
タンクロマイト膜の成膜を行うこととした。
Means for Solving the Problems The present invention has been made to solve the above-mentioned problems. According to the present invention, there is provided a method for producing a dense film of lanthanum chromite by a wet method on a ceramic substrate which is somewhat dense. And a lanthanum chromite film is formed thereon.

【0006】ここで言うある程度緻密なセラミック基体
とは、ガス透過流束をQ(m3/m2・hr・atm)と
すると、Q≦50(m3/m2・hr・atm)のものを
指す。
[0006] The ceramic substrate having a certain degree of density means that the gas permeation flux is Q (m 3 / m 2 · hr · atm) and Q ≦ 50 (m 3 / m 2 · hr · atm). Point to.

【0007】ある程度緻密なセラミック基体上に、湿式
法でランタンクロマイトの緻密膜を作製する方法におい
て、ある程度緻密なセラミック基体の表面を粗面化処理
し、この上にランタンクロマイト膜の成膜を行うことに
より、湿式法によっても密着性の良い緻密な膜を作製で
きるようになった。
In a method of forming a lanthanum chromite dense film on a somewhat dense ceramic substrate by a wet method, the surface of the somewhat dense ceramic substrate is roughened, and a lanthanum chromite film is formed thereon. As a result, a dense film having good adhesion can be produced even by a wet method.

【0008】[0008]

【発明の実施の形態】本発明において、ある程度緻密な
セラミック基体上に成膜するとあるが、これは、ランタ
ンクロマイトの焼結助剤となる成分(Caドープではカ
ルシウムクロメイト、Srドープではストロンチウムク
ロメイト)が焼成時において液相となっているため、多
孔質基体上に直接成膜すると多孔質基体内に拡散するた
め緻密な膜を得ることができないためである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, it is stated that a film is formed on a ceramic substrate which is dense to some extent. This is because when (mate) is in a liquid phase at the time of firing, if a film is formed directly on the porous substrate, the film diffuses into the porous substrate, so that a dense film cannot be obtained.

【0009】本発明において、ある程度緻密なセラミッ
ク基体上を粗面化処理をした後、ランタンクロマイト膜
を成膜するとあるが、これは平滑なセラミック基体上に
成膜すると膜の密着性が悪く、焼成後膜の剥がれを引き
起こすためである。
In the present invention, a lanthanum chromite film is formed after performing a roughening treatment on a ceramic substrate which is dense to some extent. However, when a lanthanum chromite film is formed on a smooth ceramic substrate, the film has poor adhesion. This is to cause peeling of the film after firing.

【0010】本発明において、粗面化処理を施す前のあ
る程度緻密なセラミック基体の膜厚をt1(μm)、粗
面化処理後の膜厚をt2(μm)とした場合、0.01
≦(t1―t2)/t1≦0.2であるとしているが、
(t1―t2)/t1<0.01であると表面の凹凸が
小さすぎるため膜の密着性が悪く、ランタンクロマイト
の膜の剥がれを引き起こすためである。一方、(t1―
t2)/t1>0.2では表1に示すようにある程度緻
密なセラミック基体の機能を損なう可能性があるからで
ある。
In the present invention, when the film thickness of the ceramic substrate to some extent before the surface roughening treatment is t1 (μm) and the film thickness after the surface roughening treatment is t2 (μm), 0.01
≦ (t1−t2) /t1≦0.2,
If (t1−t2) / t1 <0.01, the unevenness of the surface is too small, so that the adhesion of the film is poor and the lanthanum chromite is peeled off. On the other hand, (t1-
If t2) / t1> 0.2, as shown in Table 1, there is a possibility that the function of the ceramic substrate that is somewhat dense may be impaired.

【0011】[0011]

【表1】 [Table 1]

【0012】本発明において、粗面化処理後のセラミッ
ク基体のガス透過流束をQ(m3/m2・hr・atm)
とすると、Q≦50(m3/m2・hr・atm)である
としているが、これは表1に示すようにQ>50(m3
/m2・hr・atm)であると、ランタンクロマイト
のガス透過流束が0.01(m3/m2・hr・atm)
以上であることと、また粗面化処理したセラミック基体
のガス透過流束が大きいほどランタンクロマイトのガス
透過流束が著しく大きくなる傾向が認められるからであ
る。この観点からすると下地のセラミック基体は緻密で
あるほど良い。
In the present invention, the gas permeation flux of the ceramic substrate after the surface roughening treatment is defined as Q (m 3 / m 2 · hr · atm).
Then, it is assumed that Q ≦ 50 (m 3 / m 2 · hr · atm). However, as shown in Table 1, Q> 50 (m 3
/ M 2 · hr · atm), the gas permeation flux of lanthanum chromite is 0.01 (m 3 / m 2 · hr · atm).
This is because the larger the gas permeation flux of the ceramic substrate subjected to the surface roughening treatment, the larger the gas permeation flux of lanthanum chromite tends to be. From this viewpoint, the denser the ceramic base, the better.

【0013】本発明において、ランタンクロマイトへド
ープする物質については特に限定されるものではない。
Ca、Sr、Mg、Co、Cu、Zn、Ti、Li等を
採用できる。この中ではCaドープが低温で焼結可能な
ことから好ましい。
In the present invention, the substance to be doped into lanthanum chromite is not particularly limited.
Ca, Sr, Mg, Co, Cu, Zn, Ti, Li and the like can be adopted. Among them, Ca dope is preferable because it can be sintered at a low temperature.

【0014】本発明の典型的な応用形態においては、多
孔質セラミック基体が固体電解質型燃料電池の空気電極
であり、ある程度緻密なセラミック基体が同空気電極と
インターコネクターの中間層(プリコート層)であり、
ランタンクロマイト緻密薄膜がインターコネクターであ
る。固体電解質型燃料電池のインターコネクターには以
下のような特性が要求されるが、本発明のランタンクロ
マイト緻密薄膜の形成方法は、そのようなインターコネ
クターの形成方法として好適である。
In a typical application of the present invention, the porous ceramic substrate is an air electrode of a solid oxide fuel cell, and a somewhat dense ceramic substrate is an intermediate layer (precoat layer) between the air electrode and the interconnector. Yes,
The lanthanum chromite dense thin film is the interconnector. The interconnector of the solid oxide fuel cell is required to have the following characteristics. The method for forming a dense lanthanum chromite thin film of the present invention is suitable as a method for forming such an interconnector.

【0015】(1)電気伝導性が高いこと。インターコ
ネクターの役割は固体電解質型燃料電池の単位セル間の
電気的導通をとることであるので最も基本的な要求事項
である。電気伝導性が低いと、インターコネクター内で
電力の自己消費が大きくなり、セルの発電効率が低下す
る。電気伝導率は、成膜状態で10S・cm 1以上
(より好ましくは40S・cm 1以上)が要求され
る。 (2)通気性が低いこと。インターコネクターの表裏面
には燃料ガス(H2、CO等)と酸化剤(空気等)が流
れるが、これらがインターコネクターを通って混じり合
ったのではセルの発電性能が低下する。通気性は、0.
01(m3/m2・hr・atm)以下(より好ましくは
0.0001(m3/m2・hr・atm)以下)が要求
される。 (3)酸化・還元いずれにも耐久性があること。 (4)熱膨張係数がYSZ(イットリア安定化ジルコニ
ア)等の他のセルの構成材と近似していること。 (5)LaSrMnO3、LaCaMnO3のような空気
電極材およびYSZとの反応性が低いこと。 (6)薄膜に成膜できること。インターコネクターに
は、その厚み方向に電流が流れるので、薄い方が抵抗が
少なくなる。膜厚200μm以下が要求される。
(1) High electrical conductivity. Since the role of the interconnector is to establish electrical continuity between the unit cells of the solid oxide fuel cell, it is the most basic requirement. If the electric conductivity is low, the self-consumption of electric power in the interconnector increases, and the power generation efficiency of the cell decreases. Electrical conductivity, 10S · cm at a film formation condition - 1 or more (more preferably 40S · cm - 1 or more) is required. (2) Low air permeability. Fuel gas (H 2 , CO, etc.) and oxidant (air, etc.) flow on the front and back surfaces of the interconnector, but if these mix through the interconnector, the power generation performance of the cell will be reduced. The air permeability is 0.
01 (m 3 / m 2 · hr · atm) or less (more preferably 0.0001 (m 3 / m 2 · hr · atm) or less). (3) Both oxidation and reduction have durability. (4) The coefficient of thermal expansion is close to that of other cells such as YSZ (yttria stabilized zirconia). (5) Low reactivity with air electrode materials such as LaSrMnO 3 and LaCaMnO 3 and YSZ. (6) Being able to form a thin film. Since a current flows through the interconnector in the thickness direction, the thinner the resistance, the lower the resistance. A film thickness of 200 μm or less is required.

【0016】本発明においては、ランタンクロマイト粉
体の合成方法は特に限定されるものではない。共沈法、
粉末混合法、噴霧熱分解法、ゾルゲル法、蒸発乾固法等
を採用できる。この中では噴霧熱分解法が、組成の均一
性が高いこと、シリカ、鉄等の不純物の混入が少ないこ
と、作業工程が短い(コストが安い)こと等の観点から
好ましい。
In the present invention, the method for synthesizing the lanthanum chromite powder is not particularly limited. Coprecipitation method,
A powder mixing method, a spray pyrolysis method, a sol-gel method, an evaporation to dryness method and the like can be employed. Among them, the spray pyrolysis method is preferred from the viewpoints of high uniformity of composition, low contamination of impurities such as silica and iron, and short working process (low cost).

【0017】本発明における粗面化処理の方法として
は、特に限定されるものではない。紙ヤスリで処理する
方法、スプレーで表面に研磨剤を吹き付ける方法(ブラ
スト研磨)、酸やアルカリなどの薬品を使用して浸す等
がある。この中では、作業工程が短時間で済むことから
ブラスト研磨の方法が好ましい。
The method of the surface roughening treatment in the present invention is not particularly limited. There are a method of treating with a paper file, a method of spraying an abrasive on the surface with a spray (blast polishing), and a method of dipping using a chemical such as acid or alkali. Among these, the blast polishing method is preferable because the working process can be completed in a short time.

【0018】本発明における粗面化処理に用いる研磨剤
としては特に限定されるものではない。炭化ケイ素、炭
化ホウ素、アルミナ、ダイヤモンド、ジルコニア等を用
いることができる。固体電解質型燃料電池のインターコ
ネクター膜の作製に用いる場合は、アルミナ、ジルコニ
アを用いることが望ましい。
The abrasive used for the surface roughening treatment in the present invention is not particularly limited. Silicon carbide, boron carbide, alumina, diamond, zirconia, or the like can be used. When it is used for manufacturing an interconnector membrane of a solid oxide fuel cell, it is desirable to use alumina and zirconia.

【0019】本発明において、ランタンクロマイト粉末
スラリーを得るための水溶液は、以下を含むこととして
よい。 (1)バインダー:PVA、EC(エチルセルロース)
等。その含有量は、溶剤10重量部に対して0.1〜1
0重量部が好ましい。 (2)難揮発性溶剤:α―テルピネオール等。その含有
量は、溶剤100重量部に対して10〜80重量部が好
ましい。 (3)溶媒:エタノール、2−プロパノール、メタノー
ル等。その含有量は、溶剤100重量部に対して20〜
90重量部が好ましい。 (4)分散剤:ポリオキシエチレンアルキルリン酸エス
テル、CTAB等。その含有量は、溶剤100重量部に
対して0.1〜4重量部が好ましい。 (5)消泡剤:ソルビタンセスキオレエート等。その含
有量は、溶剤100重量部に対して0.1〜4重量部が
好ましい。
In the present invention, the aqueous solution for obtaining the lanthanum chromite powder slurry may include the following. (1) Binder: PVA, EC (ethyl cellulose)
etc. The content is 0.1 to 1 with respect to 10 parts by weight of the solvent.
0 parts by weight is preferred. (2) Non-volatile solvents: α-terpineol and the like. The content is preferably from 10 to 80 parts by weight based on 100 parts by weight of the solvent. (3) Solvent: ethanol, 2-propanol, methanol and the like. Its content is from 20 to 100 parts by weight of the solvent.
90 parts by weight are preferred. (4) Dispersant: polyoxyethylene alkyl phosphate, CTAB and the like. The content is preferably 0.1 to 4 parts by weight based on 100 parts by weight of the solvent. (5) Antifoaming agent: sorbitan sesquioleate and the like. The content is preferably 0.1 to 4 parts by weight based on 100 parts by weight of the solvent.

【0020】[0020]

【実施例】以下、本発明の実施例を説明する。La0.8
Sr0.2MnO3(ガス透過流束:2000(m3/m2
hr・atm))の多孔質基板上にLa0.8Ca0.2Mn
3膜を成膜焼成し、ある程度緻密なLa0.8Ca0.2
nO3膜(膜厚100μm)を作製した。この膜面上に、
スプレーでアルミナ粉末を吹き付け、粗面化処理をし
た。この膜を蒸留水で洗浄、乾燥した後、粗面化処理し
た膜面をLa0.8Ca0.2CrO3粉末を含んだスラリー
に浸した(ディッピングした)。このスラリーに浸し乾
燥をする工程を繰り返した後、1400℃の10時間キ
ープの焼成をした。
Embodiments of the present invention will be described below. La 0.8
Sr 0.2 MnO 3 (gas permeation flux: 2000 (m 3 / m 2 ·
hr.atm)) on a porous substrate of La 0.8 Ca 0.2 Mn.
O 3 film is formed and fired, and La 0.8 Ca 0.2 M
An nO 3 film (film thickness 100 μm) was produced. On this membrane surface,
Alumina powder was sprayed with a spray to perform a roughening treatment. After the membrane was washed with distilled water and dried, the roughened membrane surface was dipped (dipped) into a slurry containing La 0.8 Ca 0.2 CrO 3 powder. After repeating the step of immersing in this slurry and drying, firing at 1400 ° C. for 10 hours was performed.

【0021】上記粗面化処理の条件としては、粗面化処
理前のLa0.8Ca0.膜の膜厚をt1、粗面化処理後の
La0.8Ca0.2MnO3膜の膜厚をt2となるように制
御した。
[0021] The conditions for the roughening process, the thickness of the surface-roughening treatment before the La 0.8 Ca 0. film t1, and the thickness of the La 0.8 Ca 0.2 MnO 3 films after roughening t2 It controlled so that it might become.

【0022】(1)ランタンクロマイト粉末の作製方法 La0.8Ca0.2CrO3となるようにLa、Ca、Cr
を含む硝酸水溶液を作製し、噴霧熱分解法で粉末を作製
した。作製した粉末をさらに仮焼、粒度の制御工程を経
て、スラリー用粉末とした。
(1) Preparation method of lanthanum chromite powder La, Ca, Cr is selected so that La 0.8 Ca 0.2 CrO 3 is obtained.
Was prepared and a powder was prepared by a spray pyrolysis method. The produced powder was further calcined and subjected to a particle size control step to obtain a slurry powder.

【0023】(2)スラリー水溶液 テルピネオール33部とエタノール100部とを混合し
た後、バインダーとしてエチルセルロースを1.2部、
分散剤としてのポリオキシエチレンアルキルリン酸エス
テル1部、消泡剤としてのソルビタンセスキオレエート
を1部を添加・混合してスラリー水溶液を作製した。
(2) Slurry aqueous solution After mixing 33 parts of terpineol and 100 parts of ethanol, 1.2 parts of ethyl cellulose as a binder,
A slurry aqueous solution was prepared by adding and mixing 1 part of polyoxyethylene alkyl phosphate as a dispersant and 1 part of sorbitan sesquioleate as a defoaming agent.

【0024】(3)スラリーの作製 上記スラリー溶液100重量部に対し、平均径1〜2μ
mに制御したLa0.8Ca0.2CrO3粉末40部と平均径
0.5μmに制御したLa0.8Ca0.2CrO3粉末10部
を混合してスラリーを作製した。
(3) Preparation of Slurry An average diameter of 1 to 2 μm was added to 100 parts by weight of the slurry solution.
A slurry was prepared by mixing 40 parts of La 0.8 Ca 0.2 CrO 3 powder controlled to m and 10 parts of La 0.8 Ca 0.2 CrO 3 powder controlled to an average diameter of 0.5 μm.

【0025】(4)成膜 上記スラリーへ粗面化処理を施した面を30秒浸し、乾
燥する工程を7回繰り返した。
(4) Film Formation The step of immersing the surface subjected to the surface roughening treatment in the slurry for 30 seconds and drying was repeated seven times.

【0026】(5)乾燥 上記スラリーコート膜を80℃で1時間の乾燥をした。(5) Drying The slurry coat film was dried at 80 ° C. for 1 hour.

【0027】(6)膜厚 焼成後に得られたランタンクロマイトの膜厚は、40〜
60μmであった。
(6) Film Thickness The thickness of the lanthanum chromite obtained after firing is from 40 to
It was 60 μm.

【0028】(7)剥がれ試験 表1に粗面化処理条件と膜の剥がれの関係を示す。粗面
化処理を施さないでLa0.8Ca0.2CrO3膜を成膜す
ると、膜の剥がれが大きいだけでなく、ガス透過も大き
くなる傾向が認められた。また粗面化処理をしても(t
1―t2)/t1<0.01程度の処理では膜の密着性
が悪く剥がれやすいかった。(t1―t2)/t1≧
0.01では、膜の剥がれは認められなかった。
(7) Peeling Test Table 1 shows the relationship between the roughening conditions and the peeling of the film. When the La 0.8 Ca 0.2 CrO 3 film was formed without performing the surface roughening treatment, not only peeling of the film but also gas permeability tended to be large. Further, even if the surface is roughened (t
In the treatment of about 1-t2) / t1 <0.01, the adhesion of the film was poor and the film was easily peeled. (T1-t2) / t1 ≧
At 0.01, no peeling of the film was observed.

【0029】(8)ガス透過流束 表1および図1にLa0.8Ca0.2CrO3膜のガス透過
流束の結果を示す。(t1―t2)/t1が、0.05
以下ではガス透過流束が低くなる傾向があり、さらに
0.05から0.1までは同程度でさらに0.1以上に
なるとガス透過流束が大きくなる傾向が認められた。ま
た0.2を越えると、ガス透過流束が0.01(m3
2・hr・atm)より大きくなり緻密な膜でなくな
り、さらに(t1―t2)/t1>0.2であるとガス
透過流束の値が著しく大きくなる傾向が認められた。本
実施例では、(t1―t2)/t1>0.2であると、
La0. 8Ca0.2CrO3膜の緻密性が著しく低下した
が、これは下地のLa0.8Ca0.2MnO3膜が多孔質に
なったため焼成時にLa0.8Ca0.2CrO3の焼結助剤
が下地に拡散し、緻密なLa0.8Ca0.2CrO3膜が得
られなかったものと推測された。この観点から、0.0
1≦(t1―t2)/t1≦0.2の範囲であることが
好ましい。
(8) Gas Permeation Flux Table 1 and FIG. 1 show the results of the gas permeation flux of the La 0.8 Ca 0.2 CrO 3 film. (T1-t2) / t1 is 0.05
In the following, the gas permeation flux tended to decrease, and it was recognized that the gas permeation flux tended to increase from 0.05 to 0.1, and to increase at 0.1 or more. If it exceeds 0.2, the gas permeation flux becomes 0.01 (m 3 /
m 2 · hr · atm), the film was not a dense film, and when (t 1 -t 2) / t 1> 0.2, the value of the gas permeation flux tended to be significantly increased. In this embodiment, when (t1−t2) / t1> 0.2,
La 0. Although 8 Ca 0.2 denseness of CrO 3 film is severely degraded, which sintering aid La 0.8 Ca 0.2 CrO 3 at the time of firing for La 0.8 Ca 0.2 MnO 3 films underlying becomes porous base It was speculated that a dense La 0.8 Ca 0.2 CrO 3 film could not be obtained. From this perspective, 0.0
It is preferable that the range of 1 ≦ (t1−t2) /t1≦0.2 is satisfied.

【0030】(9)La0.8Ca0.2MnO3膜膜粗面化
処理後のガス透過流束 表1にLa0.8Ca0.2MnO3膜の粗面化処理後のガス
透過流束とLa0.8Ca 0.2CrO3膜のガス透過流束の
関係を示す。この結果から、La0.8Ca0.2MnO3
の粗面化処理後のガス透過流束Q>50(m3/m2・h
r・atm)ではLa0.8Ca0.2CrO3膜のガス透過
流束が>0.01(m3/m2・hr・atm)であり、
緻密なランタンクロマイト膜を作製するには、粗面化処
理後のセラミック基体がQ≦50(m3/m2・hr・a
tm)であることが好ましい。
(9) La0.8Ca0.2MnOThreeFilm roughening
Gas permeation flux after treatment Table 1 shows La0.8Ca0.2MnOThreeGas after film roughening
Permeate flux and La0.8Ca 0.2CrOThreeOf the gas permeation flux of the membrane
Show the relationship. From this result, La0.8Ca0.2MnOThreefilm
Gas permeation flux Q> 50 (mThree/ MTwo・ H
r ・ atm) is La0.8Ca0.2CrOThreeGas permeation of membrane
Flux> 0.01 (mThree/ MTwo・ Hr ・ atm)
To produce a dense lanthanum chromite film, a roughening treatment
After processing, the ceramic substrate has Q ≦ 50 (mThree/ MTwo・ Hr ・ a
tm).

【0031】[0031]

【発明の効果】以上に説明した如く本発明のによれば、
比較的簡便で安価な湿式法によって密着性の良好な緻密
ランタンクロマイト膜を作製することができる。SOF
Cの空気極とインターコネクターの中間層(プリコート
層)上に粗面化処理をして、ランタンクロマイトの成膜
を行うと、密着性の良好な緻密質インターコネクター膜
を作製できる効果がある。
According to the present invention as described above,
A dense lanthanum chromite film having good adhesion can be produced by a relatively simple and inexpensive wet method. SOF
When a roughening treatment is performed on the intermediate layer (precoat layer) of the air electrode C and the interconnector to form lanthanum chromite, a dense interconnector film having good adhesion can be produced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例の粗面化処理条件とガス透過流
束の関係を示す図
FIG. 1 is a diagram showing the relationship between surface roughening treatment conditions and gas permeation flux according to an embodiment of the present invention.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ある程度緻密なセラミック基体上に、湿
式法でランタンクロマイトの緻密膜を作製する方法にお
いて、基体の表面を粗面化処理し、この上にランタンク
ロマイト膜の成膜を行うことを特徴とするランタンクロ
マイト緻密膜の作製方法。
1. A method for producing a dense lanthanum chromite film on a ceramic substrate that is somewhat dense by a wet method, comprising subjecting a surface of the substrate to a roughening treatment and forming a lanthanum chromite film on the surface. Characteristic method for producing a dense lanthanum chromite film.
【請求項2】 上記粗面化処理を施す前のある程度緻密
なセラミック基体の膜厚をt1(μm)、粗面化処理後
の膜厚をt2(μm)とした場合、0.01≦(t1―
t2)/t1≦0.2である請求項1記載のランタンク
ロマイト緻密膜の作製方法。
2. When the thickness of the ceramic substrate to some extent before the surface roughening treatment is t1 (μm) and the film thickness after the surface roughening treatment is t2 (μm), 0.01 ≦ ( t1-
2. The method for producing a lanthanum chromite dense film according to claim 1, wherein t2) /t1≦0.2.
【請求項3】 上記粗面化処理後のセラミック基体のガ
ス透過流束をQ(m 3/m2・hr・atm)とすると、
Q≦50(m3/m2・hr・atm)である請求項1記
載のランタンクロマイト緻密膜の作製方法。
3. The ceramic substrate after the surface roughening treatment.
The permeation flux is Q (m Three/ MTwo・ Hr ・ atm)
Q ≦ 50 (mThree/ MTwo.Hr.atm).
Method for producing a dense lanthanum chromite film described above.
JP11122032A 1998-05-11 1999-04-28 Production of lanthanum chromite compact film Pending JP2000044369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11122032A JP2000044369A (en) 1998-05-11 1999-04-28 Production of lanthanum chromite compact film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-145040 1998-05-11
JP14504098 1998-05-11
JP11122032A JP2000044369A (en) 1998-05-11 1999-04-28 Production of lanthanum chromite compact film

Publications (1)

Publication Number Publication Date
JP2000044369A true JP2000044369A (en) 2000-02-15

Family

ID=26459255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11122032A Pending JP2000044369A (en) 1998-05-11 1999-04-28 Production of lanthanum chromite compact film

Country Status (1)

Country Link
JP (1) JP2000044369A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346820A (en) * 2002-05-30 2003-12-05 Sulzer Hexis Ag Ink production method
CN111848182A (en) * 2020-08-03 2020-10-30 贺州学院 A kind of preparation method of ceramic film inside container

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346820A (en) * 2002-05-30 2003-12-05 Sulzer Hexis Ag Ink production method
CN111848182A (en) * 2020-08-03 2020-10-30 贺州学院 A kind of preparation method of ceramic film inside container

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