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ITMI20050962A1 - Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza - Google Patents

Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza

Info

Publication number
ITMI20050962A1
ITMI20050962A1 IT000962A ITMI20050962A ITMI20050962A1 IT MI20050962 A1 ITMI20050962 A1 IT MI20050962A1 IT 000962 A IT000962 A IT 000962A IT MI20050962 A ITMI20050962 A IT MI20050962A IT MI20050962 A1 ITMI20050962 A1 IT MI20050962A1
Authority
IT
Italy
Prior art keywords
epitaxial reactor
reaction chamber
take
reaction gas
reaction
Prior art date
Application number
IT000962A
Other languages
English (en)
Inventor
Vittorio Pozzetti
Franco Preti
Natale Speciale
Gianluca Valente
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to IT000962A priority Critical patent/ITMI20050962A1/it
Priority to JP2008512827A priority patent/JP5289048B2/ja
Priority to PCT/EP2006/062523 priority patent/WO2006125777A1/en
Priority to DE602006015944T priority patent/DE602006015944D1/de
Priority to US11/914,000 priority patent/US20080202424A1/en
Priority to CN200680018134XA priority patent/CN101203633B/zh
Priority to RU2007148476/15A priority patent/RU2007148476A/ru
Priority to EP06777236A priority patent/EP1885917B1/en
Priority to AT06777236T priority patent/ATE476538T1/de
Priority to KR1020077025561A priority patent/KR20080032021A/ko
Publication of ITMI20050962A1 publication Critical patent/ITMI20050962A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
    • B01J12/02—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor for obtaining at least one reaction product which, at normal temperature, is in the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/26—Nozzle-type reactors, i.e. the distribution of the initial reactants within the reactor is effected by their introduction or injection through nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
    • B01J4/002—Nozzle-type elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00119—Heat exchange inside a feeding nozzle or nozzle reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
IT000962A 2005-05-25 2005-05-25 Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza ITMI20050962A1 (it)

Priority Applications (10)

Application Number Priority Date Filing Date Title
IT000962A ITMI20050962A1 (it) 2005-05-25 2005-05-25 Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
JP2008512827A JP5289048B2 (ja) 2005-05-25 2006-05-23 反応ガスを反応チャンバに導入するデバイス、および前記デバイスを使用するエピタキシャル反応炉
PCT/EP2006/062523 WO2006125777A1 (en) 2005-05-25 2006-05-23 Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device
DE602006015944T DE602006015944D1 (de) 2005-05-25 2006-05-23 Epitaxialreaktor mit gerät zur einführung von reaktionsgasen
US11/914,000 US20080202424A1 (en) 2005-05-25 2006-05-23 Device For Introducing Reaction Gases Into A Reaction Chamber And Epitaxial Reactor Which Uses Said Device
CN200680018134XA CN101203633B (zh) 2005-05-25 2006-05-23 将反应气体引入反应室的设备及应用该设备的外延反应器
RU2007148476/15A RU2007148476A (ru) 2005-05-25 2006-05-23 Устройство для введения реакционых газов в реакционную камеру и эпитаксиальный реактор, в котором используется указанное устройство
EP06777236A EP1885917B1 (en) 2005-05-25 2006-05-23 Epitaxial reactor with device for introducing reaction gases
AT06777236T ATE476538T1 (de) 2005-05-25 2006-05-23 Epitaxialreaktor mit gerät zur einführung von reaktionsgasen
KR1020077025561A KR20080032021A (ko) 2005-05-25 2006-05-23 반응가스들을 반응챔버로 도입하기 위한 장치 및 상기장치를 사용하는 에피택셜 반응기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000962A ITMI20050962A1 (it) 2005-05-25 2005-05-25 Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza

Publications (1)

Publication Number Publication Date
ITMI20050962A1 true ITMI20050962A1 (it) 2006-11-26

Family

ID=36930240

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000962A ITMI20050962A1 (it) 2005-05-25 2005-05-25 Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza

Country Status (10)

Country Link
US (1) US20080202424A1 (it)
EP (1) EP1885917B1 (it)
JP (1) JP5289048B2 (it)
KR (1) KR20080032021A (it)
CN (1) CN101203633B (it)
AT (1) ATE476538T1 (it)
DE (1) DE602006015944D1 (it)
IT (1) ITMI20050962A1 (it)
RU (1) RU2007148476A (it)
WO (1) WO2006125777A1 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20071075A1 (it) * 2007-05-28 2008-11-29 Lpe Spa Reattore per la crescita di cristalli con ingressi raffreddati
JP4591523B2 (ja) * 2008-03-05 2010-12-01 株式会社デンソー 炭化珪素単結晶の製造装置
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
JP5774772B2 (ja) * 2011-04-29 2015-09-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 反応性堆積プロセスのためのガスシステム
KR102086048B1 (ko) 2017-07-07 2020-03-06 주식회사 엘지화학 분산판 및 이를 포함하는 정제탑
CN111074237A (zh) * 2018-10-18 2020-04-28 君泰创新（北京）科技有限公司 源瓶
US11309177B2 (en) 2018-11-06 2022-04-19 Stmicroelectronics S.R.L. Apparatus and method for manufacturing a wafer
IT201900000223A1 (it) 2019-01-09 2020-07-09 Lpe Spa Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore
IT201900015416A1 (it) 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
CN110699667A (zh) * 2019-11-25 2020-01-17 美尔森银河新材料(烟台)有限公司 一种炭炭坩埚生产装置
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
CN119082874B (zh) * 2024-11-08 2025-04-29 洛阳中硅高科技有限公司 一种碳化硅晶体沉积装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59219929A (ja) * 1983-05-30 1984-12-11 Sanyo Electric Co Ltd Ｓｉｃ単結晶積層体及びその製造方法
JPS6071596A (ja) * 1983-09-27 1985-04-23 Matsushita Electric Ind Co Ltd 気相成長装置
JPS6168393A (ja) * 1984-09-11 1986-04-08 Touyoko Kagaku Kk ホツトウオ−ル形エピタキシヤル成長装置
JPS61110767A (ja) * 1984-10-31 1986-05-29 Fujitsu Ltd Ｃｖｄ装置
JPH0732128B2 (ja) * 1985-09-11 1995-04-10 株式会社東芝 気相成長装置
JPH05109654A (ja) * 1991-10-16 1993-04-30 Tokyo Electron Ltd 成膜処理装置
JP3168277B2 (ja) * 1993-01-14 2001-05-21 エア・ウォーター株式会社 半導体結晶成長装置
JP3322740B2 (ja) * 1993-12-21 2002-09-09 三菱マテリアル株式会社 半導体基板およびその製造方法
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
EP1060301B1 (en) * 1998-02-24 2003-01-22 Aixtron AG Ceiling arrangement for an epitaxial growth reactor
US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
JP5034138B2 (ja) * 2001-01-25 2012-09-26 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US20030153059A1 (en) * 2001-06-20 2003-08-14 Pilkington Phyllis Heather Combination continuous/batch fermentation processes
JP4179041B2 (ja) * 2003-04-30 2008-11-12 株式会社島津製作所 有機ｅｌ用保護膜の成膜装置、製造方法および有機ｅｌ素子
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
KR101309334B1 (ko) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터

Also Published As

Publication number Publication date
EP1885917B1 (en) 2010-08-04
DE602006015944D1 (de) 2010-09-16
US20080202424A1 (en) 2008-08-28
KR20080032021A (ko) 2008-04-14
WO2006125777A1 (en) 2006-11-30
RU2007148476A (ru) 2009-06-27
ATE476538T1 (de) 2010-08-15
EP1885917A1 (en) 2008-02-13
CN101203633A (zh) 2008-06-18
JP2008543037A (ja) 2008-11-27
JP5289048B2 (ja) 2013-09-11
CN101203633B (zh) 2012-05-23

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