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IT959917B - Struttura semiconduttrice perfezionata - Google Patents

Struttura semiconduttrice perfezionata

Info

Publication number
IT959917B
IT959917B IT26075/72A IT2607572A IT959917B IT 959917 B IT959917 B IT 959917B IT 26075/72 A IT26075/72 A IT 26075/72A IT 2607572 A IT2607572 A IT 2607572A IT 959917 B IT959917 B IT 959917B
Authority
IT
Italy
Prior art keywords
perfected
semiconductive structure
semiconductive
perfected semiconductive
Prior art date
Application number
IT26075/72A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT959917B publication Critical patent/IT959917B/it

Links

Classifications

    • H10P30/204—
    • H10P30/208—
    • H10P30/222—
    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10P90/1908—
    • H10W10/012—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
IT26075/72A 1971-10-06 1972-06-23 Struttura semiconduttrice perfezionata IT959917B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18689071A 1971-10-06 1971-10-06

Publications (1)

Publication Number Publication Date
IT959917B true IT959917B (it) 1973-11-10

Family

ID=22686706

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26075/72A IT959917B (it) 1971-10-06 1972-06-23 Struttura semiconduttrice perfezionata

Country Status (8)

Country Link
US (1) US3726719A (it)
JP (1) JPS5147566B2 (it)
BE (1) BE792589A (it)
CA (1) CA981372A (it)
DE (1) DE2231891C3 (it)
FR (1) FR2156545B1 (it)
GB (1) GB1376526A (it)
IT (1) IT959917B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849918B1 (en) * 1965-09-28 2005-02-01 Chou H. Li Miniaturized dielectrically isolated solid state device
US4946800A (en) * 1965-09-28 1990-08-07 Li Chou H Method for making solid-state device utilizing isolation grooves
US3852119A (en) * 1972-11-14 1974-12-03 Texas Instruments Inc Metal-insulator-semiconductor structures having reduced junction capacitance and method of fabrication
US3855009A (en) * 1973-09-20 1974-12-17 Texas Instruments Inc Ion-implantation and conventional epitaxy to produce dielectrically isolated silicon layers
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
DE2725966A1 (de) * 1977-06-08 1978-12-21 Nat Res Dev Verfahren zum wachsen von kuenstlichen diamanten
JPS5721856B2 (en) * 1977-11-28 1982-05-10 Nippon Telegraph & Telephone Semiconductor and its manufacture
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
EP0023656B1 (en) * 1979-07-23 1984-05-09 Kabushiki Kaisha Toshiba Charge storage type semiconductor device
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate
FR2575601B1 (fr) * 1984-12-27 1987-01-30 Commissariat Energie Atomique Procede et dispositif de determination de parametres electriques d'une couche semi-conductrice en fonction de la profondeur
JP2724702B2 (ja) * 1985-06-21 1998-03-09 日本テキサス・インスツルメンツ 株式会社 電荷結合型半導体装置の製造方法
JPS61294866A (ja) * 1985-06-21 1986-12-25 Nippon Texas Instr Kk 電荷結合型半導体装置
US5236872A (en) * 1991-03-21 1993-08-17 U.S. Philips Corp. Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
JP2005064033A (ja) * 2003-08-12 2005-03-10 Fujio Masuoka 半導体基板へのイオン注入方法

Also Published As

Publication number Publication date
FR2156545A1 (it) 1973-06-01
JPS5147566B2 (it) 1976-12-15
FR2156545B1 (it) 1975-03-07
DE2231891B2 (de) 1977-08-04
US3726719A (en) 1973-04-10
GB1376526A (en) 1974-12-04
JPS4846269A (it) 1973-07-02
DE2231891C3 (de) 1978-04-06
BE792589A (fr) 1973-03-30
DE2231891A1 (de) 1973-04-12
CA981372A (en) 1976-01-06

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