IT1316271B1 - Generatore di impulsi compensato in tensione e temperatura. - Google Patents
Generatore di impulsi compensato in tensione e temperatura.Info
- Publication number
- IT1316271B1 IT1316271B1 IT2000RM000700A ITRM20000700A IT1316271B1 IT 1316271 B1 IT1316271 B1 IT 1316271B1 IT 2000RM000700 A IT2000RM000700 A IT 2000RM000700A IT RM20000700 A ITRM20000700 A IT RM20000700A IT 1316271 B1 IT1316271 B1 IT 1316271B1
- Authority
- IT
- Italy
- Prior art keywords
- voltage
- pulse generator
- temperature compensated
- compensated pulse
- temperature
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0231—Astable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
- H03K4/50—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000RM000700A IT1316271B1 (it) | 2000-12-28 | 2000-12-28 | Generatore di impulsi compensato in tensione e temperatura. |
| US10/032,277 US6643192B2 (en) | 2000-12-28 | 2001-12-21 | Voltage and temperature compensated pulse generator |
| US10/642,958 US6807111B2 (en) | 2000-12-28 | 2003-08-18 | Voltage and temperature compensated pulse generator |
| US10/703,880 US6949957B2 (en) | 2000-12-28 | 2003-11-07 | Command user interface with programmable decoder |
| US10/703,322 US6981237B2 (en) | 2000-12-28 | 2003-11-07 | Command user interface with programmable decoder |
| US10/932,858 US6898131B2 (en) | 2000-12-28 | 2004-09-02 | Voltage and temperature compensated pulse generator |
| US11/288,471 US20060077078A1 (en) | 2000-12-28 | 2005-11-29 | Command user interface with programmable decoder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000RM000700A IT1316271B1 (it) | 2000-12-28 | 2000-12-28 | Generatore di impulsi compensato in tensione e temperatura. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITRM20000700A0 ITRM20000700A0 (it) | 2000-12-28 |
| ITRM20000700A1 ITRM20000700A1 (it) | 2002-06-28 |
| IT1316271B1 true IT1316271B1 (it) | 2003-04-03 |
Family
ID=11455083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2000RM000700A IT1316271B1 (it) | 2000-12-28 | 2000-12-28 | Generatore di impulsi compensato in tensione e temperatura. |
Country Status (2)
| Country | Link |
|---|---|
| US (3) | US6643192B2 (it) |
| IT (1) | IT1316271B1 (it) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6529421B1 (en) | 2001-08-28 | 2003-03-04 | Micron Technology, Inc. | SRAM array with temperature-compensated threshold voltage |
| US6781907B2 (en) * | 2002-06-06 | 2004-08-24 | Micron Technology, Inc. | Temperature compensated T-RAM memory device and method |
| US6687165B1 (en) * | 2002-12-26 | 2004-02-03 | Micron Technology, Inc. | Temperature-compensated output buffer circuit |
| KR100521385B1 (ko) * | 2003-12-15 | 2005-10-12 | 삼성전자주식회사 | 고전압 발생 회로 및 그것을 포함한 반도체 메모리 장치 |
| US7116588B2 (en) * | 2004-09-01 | 2006-10-03 | Micron Technology, Inc. | Low supply voltage temperature compensated reference voltage generator and method |
| KR100933797B1 (ko) * | 2005-12-29 | 2009-12-24 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 승압전압 레벨 감지기 |
| US7269092B1 (en) * | 2006-04-21 | 2007-09-11 | Sandisk Corporation | Circuitry and device for generating and adjusting selected word line voltage |
| US7518930B2 (en) * | 2006-04-21 | 2009-04-14 | Sandisk Corporation | Method for generating and adjusting selected word line voltage |
| US7436724B2 (en) * | 2006-08-04 | 2008-10-14 | Sandisk Corporation | Method and system for independent control of voltage and its temperature co-efficient in non-volatile memory devices |
| US7447093B2 (en) * | 2006-12-29 | 2008-11-04 | Sandisk Corporation | Method for controlling voltage in non-volatile memory systems |
| US7403434B1 (en) * | 2006-12-29 | 2008-07-22 | Sandisk Corporation | System for controlling voltage in non-volatile memory systems |
| US8339843B2 (en) * | 2010-12-17 | 2012-12-25 | Honeywell International Inc. | Generating a temperature-compensated write current for a magnetic memory cell |
| US8547746B2 (en) | 2011-02-24 | 2013-10-01 | Micron Technology, Inc. | Voltage generation and adjustment in a memory device |
| US9368212B1 (en) | 2015-03-26 | 2016-06-14 | Micron Technology, Inc. | Memory with temperature coefficient trimming |
| KR102377453B1 (ko) | 2015-11-05 | 2022-03-23 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 동작 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993018369A1 (en) * | 1992-03-02 | 1993-09-16 | Seiko Epson Corporation | Displacement sensor |
| US5373227A (en) | 1993-03-26 | 1994-12-13 | Micron Semiconductor, Inc. | Control circuit responsive to its supply voltage level |
| JPH0746082A (ja) * | 1993-07-30 | 1995-02-14 | Nippondenso Co Ltd | フィルタ回路 |
| US5650966A (en) * | 1995-11-01 | 1997-07-22 | Advanced Micro Devices, Inc. | Temperature compensated reference for overerase correction circuitry in a flash memory |
| JP3648304B2 (ja) * | 1995-11-17 | 2005-05-18 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5644538A (en) | 1996-03-01 | 1997-07-01 | Micron Technology, Inc. | Circuit and method for controllng the duration of pulses in a control signal from an electronic system |
| US5729169A (en) | 1996-07-10 | 1998-03-17 | Micron Quantum Devices, Inc. | Controllable one-shot circuit and method for controlling operation of memory circuit using same |
| US6087876A (en) | 1999-01-13 | 2000-07-11 | Analog Devices, Inc. | Time delay generator and method |
| US6163225A (en) * | 1999-05-05 | 2000-12-19 | Intel Corporation | Method and apparatus for achieving low standby power using a positive temperature correlated clock frequency |
| JP3954245B2 (ja) * | 1999-07-22 | 2007-08-08 | 株式会社東芝 | 電圧発生回路 |
| US6269026B1 (en) * | 2000-02-29 | 2001-07-31 | Advanced Micro Devices, Inc. | Charge sharing to help boost the wordlines during APDE verify |
| US6542437B1 (en) * | 2000-08-14 | 2003-04-01 | Rui Chen | Laser pointer with built-in accessories |
| US6765372B2 (en) * | 2001-12-14 | 2004-07-20 | Intersil Americas Inc. | Programmable current-sensing circuit providing continuous temperature compensation for DC-DC Converter |
-
2000
- 2000-12-28 IT IT2000RM000700A patent/IT1316271B1/it active
-
2001
- 2001-12-21 US US10/032,277 patent/US6643192B2/en not_active Expired - Lifetime
-
2003
- 2003-08-18 US US10/642,958 patent/US6807111B2/en not_active Expired - Lifetime
-
2004
- 2004-09-02 US US10/932,858 patent/US6898131B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ITRM20000700A0 (it) | 2000-12-28 |
| US20040037130A1 (en) | 2004-02-26 |
| US20030012058A1 (en) | 2003-01-16 |
| US6643192B2 (en) | 2003-11-04 |
| US6807111B2 (en) | 2004-10-19 |
| ITRM20000700A1 (it) | 2002-06-28 |
| US20050024951A1 (en) | 2005-02-03 |
| US6898131B2 (en) | 2005-05-24 |
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