IT1239789B - Componente semiconduttore di potenza, cellulare. - Google Patents

Componente semiconduttore di potenza, cellulare.

Info

Publication number: IT1239789B
Authority: IT; Italy
Prior art keywords: semiconductor power; mobile component; mobile; component; semiconductor
Prior art date: 1989-02-03

Application number

IT47587A

Other languages

English (en)

Other versions

IT9047587A0 (it

IT9047587A1 (it

Inventor

Jacques Arnould

Original Assignee

Telemecanique

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-02-03

Filing date

1990-02-01

Publication date

1993-11-15

1990-02-01 Application filed by Telemecanique filed Critical Telemecanique

1990-02-01 Publication of IT9047587A0 publication Critical patent/IT9047587A0/it

1990-08-04 Publication of IT9047587A1 publication Critical patent/IT9047587A1/it

1993-11-15 Application granted granted Critical

1993-11-15 Publication of IT1239789B publication Critical patent/IT1239789B/it

Classifications

- H10W20/427—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/281—Base electrodes for bipolar transistors
- H10W20/43—

IT47587A 1989-02-03 1990-02-01 Componente semiconduttore di potenza, cellulare. IT1239789B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR8901409A FR2642902B1 (fr)	1989-02-03	1989-02-03	Composant semi-conducteur de puissance cellulaire

Publications (3)

Publication Number	Publication Date
IT9047587A0 IT9047587A0 (it)	1990-02-01
IT9047587A1 IT9047587A1 (it)	1990-08-04
IT1239789B true IT1239789B (it)	1993-11-15

Family

ID=9378456

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT47587A IT1239789B (it)	1989-02-03	1990-02-01	Componente semiconduttore di potenza, cellulare.

Country Status (6)

Country	Link
US (1)	US5025299A (it)
JP (1)	JPH0334348A (it)
DE (1)	DE4002435A1 (it)
FR (1)	FR2642902B1 (it)
GB (1)	GB2227882B (it)
IT (1)	IT1239789B (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2687843A1 (fr) *	1992-02-24	1993-08-27	Motorola Semiconducteurs	Transistor bipolaire lateral pnp et procede de fabrication.
JPH05304221A (ja) *	1992-02-28	1993-11-16	Fuji Electric Co Ltd	大電流集積回路
US5665991A (en) *	1992-03-13	1997-09-09	Texas Instruments Incorporated	Device having current ballasting and busing over active area using a multi-level conductor process
KR0136684B1 (en) *	1993-06-01	1998-04-29	Matsushita Electric Industrial Co Ltd	Semiconductor device and manufacture thereof
US5482897A (en) *	1994-07-19	1996-01-09	Lsi Logic Corporation	Integrated circuit with on-chip ground plane
US5581126A (en) *	1995-09-14	1996-12-03	Advanced Micro Devices, Inc.	Interlaced layout configuration for differential pairs of interconnect lines
DE19613409B4 (de) *	1996-04-03	2005-11-17	Texas Instruments Deutschland Gmbh	Leistungsbauelementanordnung
US7283381B2 (en)	2000-08-17	2007-10-16	David Earl Butz	System and methods for addressing a matrix incorporating virtual columns and addressing layers
US6462977B2 (en)	2000-08-17	2002-10-08	David Earl Butz	Data storage device having virtual columns and addressing layers
JP4078391B2 (ja)	2006-05-18	2008-04-23	松下電器産業株式会社	半導体素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2545654B1 (fr) *	1983-05-03	1985-09-13	Fairchild Camera Instr Co	Composant semi-conducteur de puissance, et procede pour la fabrication

1989
- 1989-02-03 FR FR8901409A patent/FR2642902B1/fr not_active Expired - Lifetime
1990
- 1990-01-09 GB GB9000499A patent/GB2227882B/en not_active Expired
- 1990-01-27 DE DE4002435A patent/DE4002435A1/de not_active Withdrawn
- 1990-01-31 JP JP2019366A patent/JPH0334348A/ja active Pending
- 1990-02-01 IT IT47587A patent/IT1239789B/it active IP Right Grant
- 1990-02-02 US US07/473,766 patent/US5025299A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
IT9047587A0 (it)	1990-02-01
GB9000499D0 (en)	1990-03-07
JPH0334348A (ja)	1991-02-14
IT9047587A1 (it)	1990-08-04
GB2227882B (en)	1992-11-25
FR2642902B1 (fr)	1991-05-17
FR2642902A1 (fr)	1990-08-10
US5025299A (en)	1991-06-18
DE4002435A1 (de)	1990-08-09
GB2227882A (en)	1990-08-08

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Legal Events

Date	Code	Title	Description
1993-11-15	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19990226