IT1193534B - SEMICONDUCTOR LASER DEVICE, WITH A SINGLE FILAMENT OF LIGHT EQUIPPED WITH A LARGE SENDING AREA - Google Patents

SEMICONDUCTOR LASER DEVICE, WITH A SINGLE FILAMENT OF LIGHT EQUIPPED WITH A LARGE SENDING AREA

Info

Publication number: IT1193534B
Authority: IT; Italy
Prior art keywords: semiconductor laser; laser device; single filament; sending area; light equipped
Prior art date: 1979-10-12

Application number

IT22046/80A

Other languages

Italian (it)

Other versions

IT8022046A0 (en

Inventor

Dan Botez

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-10-12

Filing date

1980-05-14

Publication date

1988-07-08

1980-05-14 Application filed by Rca Corp filed Critical Rca Corp

1980-05-14 Publication of IT8022046A0 publication Critical patent/IT8022046A0/en

1988-07-08 Application granted granted Critical

1988-07-08 Publication of IT1193534B publication Critical patent/IT1193534B/en

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

IT22046/80A 1979-10-12 1980-05-14 SEMICONDUCTOR LASER DEVICE, WITH A SINGLE FILAMENT OF LIGHT EQUIPPED WITH A LARGE SENDING AREA IT1193534B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US8438779A	1979-10-12	1979-10-12

Publications (2)

Publication Number	Publication Date
IT8022046A0 IT8022046A0 (en)	1980-05-14
IT1193534B true IT1193534B (en)	1988-07-08

Family

ID=22184652

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT22046/80A IT1193534B (en)	1979-10-12	1980-05-14	SEMICONDUCTOR LASER DEVICE, WITH A SINGLE FILAMENT OF LIGHT EQUIPPED WITH A LARGE SENDING AREA

Country Status (4)

Country	Link
JP (1)	JPS5661190A (en)
DE (1)	DE3021104A1 (en)
GB (1)	GB2062949B (en)
IT (1)	IT1193534B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2129211B (en) *	1982-10-21	1987-01-14	Rca Corp	Semiconductor laser and a method of making same
FR2535121B1 (en) *	1982-10-25	1989-01-06	Rca Corp	SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
JPH0732278B2 (en) *	1982-10-27	1995-04-10	アールシーエーコーポレーシヨン	Semiconductor laser
US4523316A (en) *	1982-10-29	1985-06-11	Rca Corporation	Semiconductor laser with non-absorbing mirror facet
JPS62188220A (en) *	1986-02-13	1987-08-17	Sharp Corp	Method of liquid-phase epitaxy
CN114150367B (en) *	2021-11-26	2023-07-04	华中科技大学	Laser cladding repair method and repair system for high-temperature alloy single crystal defect

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4166253A (en) *	1977-08-15	1979-08-28	International Business Machines Corporation	Heterostructure diode injection laser having a constricted active region
IT1121922B (en) *	1978-07-31	1986-04-23	Rca Corp	SEMICONDUCTOR LASER, EMISSING A SINGLE BEAM OF LIGHT

1980
- 1980-04-30 GB GB8014175A patent/GB2062949B/en not_active Expired
- 1980-05-14 IT IT22046/80A patent/IT1193534B/en active
- 1980-06-04 DE DE19803021104 patent/DE3021104A1/en not_active Withdrawn
- 1980-06-11 JP JP7957180A patent/JPS5661190A/en active Pending

Also Published As

Publication number	Publication date
DE3021104A1 (en)	1981-04-23
GB2062949A (en)	1981-05-28
JPS5661190A (en)	1981-05-26
IT8022046A0 (en)	1980-05-14
GB2062949B (en)	1983-08-10

Publication	Publication Date	Title
IT7920931A0 (en)	1979-03-13	DEVICE FOR MODULATING THE WIDTH OF A BEAM OF LIGHT.
DE68915673D1 (en)	1994-07-07	Semiconductor laser device.
IT1194477B (en)	1988-09-22	SEMICONDUCTOR LASER DEVICE
IT8224641A0 (en)	1982-12-06	PROCEDURE FOR THE FORMATION OF SUB-MICRON ORDER CHARACTERISTICS IN SEMICONDUCTOR DEVICES.
IT8022554A0 (en)	1980-06-04	SEMICONDUCTOR SWITCHING DEVICE FOR RADIATION DRIVING AND AMPLIFIATION.
DE68918884D1 (en)	1994-11-24	Semiconductor laser device.
ES492751A0 (en)	1981-02-16	A SEMICONDUCTOR LASER DEVICE
IT7927743A0 (en)	1979-11-30	DEVICE FOR REFLECTED LIGHT LIGHTING.
ES294191Y (en)	1987-06-16	OPTICAL DEVICE, CONSISTING OF A 100X MICROSCOPE WITH A 1.5 V FLASHLIGHT INCORPORATED
DE3750995D1 (en)	1995-03-02	Semiconductor laser device.
DE3786339D1 (en)	1993-07-29	SEMICONDUCTOR LASER DEVICE.
DE68908646D1 (en)	1993-09-30	Semiconductor laser.
DE3071946D1 (en)	1987-05-07	A semiconductor light emitting device
IT7922832A0 (en)	1979-05-18	SEMICONDUCTOR LASER AND PROCEDURE FOR MANUFACTURING A SEMICONDUCTOR LASER.
FR2445638B1 (en)	1986-02-21	SEMICONDUCTOR LASER DIODE
DE68912512D1 (en)	1994-03-03	Semiconductor laser device.
IT8323254A0 (en)	1983-10-11	LIGHT EMITTING DEVICE.
DE3065856D1 (en)	1984-01-19	A semiconductor light emitting device
IT1113078B (en)	1986-01-20	SEALED ENCAPSING COMPLEX FOR TITISTOR TRIGGERED BY LIGHT
DE68910492D1 (en)	1993-12-09	Semiconductor laser device.
BE852746A (en)	1977-07-18	POLY (ETHYLENE HALOBISPHENOL CARBONATES)
FR2437083B1 (en)	1986-02-21	SEMICONDUCTOR LASER DEVICE
FR2488455B1 (en)	1986-11-14	DEVICE WITH A SEMICONDUCTOR LASER DIODE
DE3789832D1 (en)	1994-06-23	Semiconductor laser device.
DE3776186D1 (en)	1992-03-05	SEMICONDUCTOR LASER DEVICE.