IT1167341B - PROCEDURE FOR THE MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUITS WITH SELF-ALIGNED CONTACTS AND INTEGRATED CIRCUITS REALIZED WITH SUCH PROCEDURE - Google Patents
PROCEDURE FOR THE MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUITS WITH SELF-ALIGNED CONTACTS AND INTEGRATED CIRCUITS REALIZED WITH SUCH PROCEDUREInfo
- Publication number
- IT1167341B IT1167341B IT67973/83A IT6797383A IT1167341B IT 1167341 B IT1167341 B IT 1167341B IT 67973/83 A IT67973/83 A IT 67973/83A IT 6797383 A IT6797383 A IT 6797383A IT 1167341 B IT1167341 B IT 1167341B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- integrated circuits
- self
- manufacture
- aligned contacts
- Prior art date
Links
Classifications
-
- H10W20/069—
-
- H10W74/137—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/421,543 US4517729A (en) | 1981-07-27 | 1982-09-22 | Method for fabricating MOS device with self-aligned contacts |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT8367973A0 IT8367973A0 (en) | 1983-09-21 |
| IT8367973A1 IT8367973A1 (en) | 1985-03-21 |
| IT1167341B true IT1167341B (en) | 1987-05-13 |
Family
ID=23670982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT67973/83A IT1167341B (en) | 1982-09-22 | 1983-09-21 | PROCEDURE FOR THE MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUITS WITH SELF-ALIGNED CONTACTS AND INTEGRATED CIRCUITS REALIZED WITH SUCH PROCEDURE |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4517729A (en) |
| JP (1) | JPS59181564A (en) |
| CA (1) | CA1210528A (en) |
| DE (1) | DE3334333A1 (en) |
| FR (1) | FR2533370A1 (en) |
| GB (1) | GB2128807B (en) |
| IT (1) | IT1167341B (en) |
| NL (1) | NL8303138A (en) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4593453A (en) * | 1982-06-01 | 1986-06-10 | Rockwell International Corporation | Two-level transistor structures and method utilizing minimal area therefor |
| JPS61145868A (en) * | 1984-12-20 | 1986-07-03 | Toshiba Corp | Manufacture of semiconductor device |
| JP2904533B2 (en) * | 1989-03-09 | 1999-06-14 | 株式会社東芝 | Method for manufacturing semiconductor device |
| US5001082A (en) * | 1989-04-12 | 1991-03-19 | Mcnc | Self-aligned salicide process for forming semiconductor devices and devices formed thereby |
| JP2952887B2 (en) * | 1989-05-20 | 1999-09-27 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
| US5237188A (en) * | 1990-11-28 | 1993-08-17 | Kabushiki Kaisha Toshiba | Semiconductor device with nitrided gate insulating film |
| KR0151195B1 (en) * | 1994-09-13 | 1998-10-01 | 문정환 | Structure and manufacturing method of thin film transistor |
| KR100329792B1 (en) * | 1995-06-30 | 2002-07-22 | 주식회사 하이닉스반도체 | Method for manufacturing thin film transistor |
| US6268296B1 (en) * | 1997-12-31 | 2001-07-31 | Texas Instruments Incorporated | Low temperature process for multiple voltage devices |
| US6445050B1 (en) | 2000-02-08 | 2002-09-03 | International Business Machines Corporation | Symmetric device with contacts self aligned to gate |
| JP2003152104A (en) * | 2001-11-14 | 2003-05-23 | Fujitsu Ltd | Semiconductor device and manufacturing method thereof |
| US7125781B2 (en) | 2003-09-04 | 2006-10-24 | Micron Technology, Inc. | Methods of forming capacitor devices |
| US7067385B2 (en) * | 2003-09-04 | 2006-06-27 | Micron Technology, Inc. | Support for vertically oriented capacitors during the formation of a semiconductor device |
| US7842948B2 (en) * | 2004-02-27 | 2010-11-30 | Nvidia Corporation | Flip chip semiconductor die internal signal access system and method |
| US7387939B2 (en) * | 2004-07-19 | 2008-06-17 | Micron Technology, Inc. | Methods of forming semiconductor structures and capacitor devices |
| US7202127B2 (en) * | 2004-08-27 | 2007-04-10 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US7439152B2 (en) * | 2004-08-27 | 2008-10-21 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US20060046055A1 (en) * | 2004-08-30 | 2006-03-02 | Nan Ya Plastics Corporation | Superfine fiber containing grey dope dyed component and the fabric made of the same |
| US7320911B2 (en) * | 2004-12-06 | 2008-01-22 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
| KR100613392B1 (en) * | 2004-12-23 | 2006-08-17 | 동부일렉트로닉스 주식회사 | How to form self-aligned contact holes |
| US7557015B2 (en) | 2005-03-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
| FR2884351A1 (en) * | 2005-04-11 | 2006-10-13 | St Microelectronics Sa | METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT COMPRISING A PHOTODIODE AND CORRESPONDING INTEGRATED CIRCUIT. |
| EP1722466A1 (en) * | 2005-05-13 | 2006-11-15 | STMicroelectronics S.r.l. | Method and relative circuit for generating a control voltage of a synchronous rectifier |
| US7544563B2 (en) * | 2005-05-18 | 2009-06-09 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US7517753B2 (en) * | 2005-05-18 | 2009-04-14 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
| US7199005B2 (en) * | 2005-08-02 | 2007-04-03 | Micron Technology, Inc. | Methods of forming pluralities of capacitors |
| US7557013B2 (en) * | 2006-04-10 | 2009-07-07 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US7902081B2 (en) * | 2006-10-11 | 2011-03-08 | Micron Technology, Inc. | Methods of etching polysilicon and methods of forming pluralities of capacitors |
| US7785962B2 (en) * | 2007-02-26 | 2010-08-31 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| US7682924B2 (en) | 2007-08-13 | 2010-03-23 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US8388851B2 (en) | 2008-01-08 | 2013-03-05 | Micron Technology, Inc. | Capacitor forming methods |
| US8274777B2 (en) | 2008-04-08 | 2012-09-25 | Micron Technology, Inc. | High aspect ratio openings |
| US7759193B2 (en) * | 2008-07-09 | 2010-07-20 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US8202776B2 (en) | 2009-04-22 | 2012-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for protecting a gate structure during contact formation |
| US8518788B2 (en) | 2010-08-11 | 2013-08-27 | Micron Technology, Inc. | Methods of forming a plurality of capacitors |
| US9076680B2 (en) | 2011-10-18 | 2015-07-07 | Micron Technology, Inc. | Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array |
| US8946043B2 (en) | 2011-12-21 | 2015-02-03 | Micron Technology, Inc. | Methods of forming capacitors |
| US8927407B2 (en) | 2012-01-20 | 2015-01-06 | Globalfoundries Inc. | Method of forming self-aligned contacts for a semiconductor device |
| US8652926B1 (en) | 2012-07-26 | 2014-02-18 | Micron Technology, Inc. | Methods of forming capacitors |
| US8928048B2 (en) | 2013-01-17 | 2015-01-06 | Globalfoundries Inc. | Methods of forming semiconductor device with self-aligned contact elements and the resulting device |
| US8940633B2 (en) | 2013-03-05 | 2015-01-27 | Globalfoundries Inc. | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices |
| US8946075B2 (en) | 2013-03-05 | 2015-02-03 | Globalfoundries Inc. | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices |
| CN108231778B (en) * | 2016-12-09 | 2022-07-12 | 联华电子股份有限公司 | Semiconductor element and manufacturing method thereof |
| US10636797B2 (en) | 2018-04-12 | 2020-04-28 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5946107B2 (en) * | 1975-06-04 | 1984-11-10 | 株式会社日立製作所 | Manufacturing method of MIS type semiconductor device |
| US3978577A (en) * | 1975-06-30 | 1976-09-07 | International Business Machines Corporation | Fixed and variable threshold N-channel MNOSFET integration technique |
| GB1504484A (en) * | 1975-08-13 | 1978-03-22 | Tokyo Shibaura Electric Co | Semiconductor device and a method for manufacturing the same |
| US4103415A (en) * | 1976-12-09 | 1978-08-01 | Fairchild Camera And Instrument Corporation | Insulated-gate field-effect transistor with self-aligned contact hole to source or drain |
| US4455737A (en) * | 1978-05-26 | 1984-06-26 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| US4277881A (en) * | 1978-05-26 | 1981-07-14 | Rockwell International Corporation | Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| US4221044A (en) * | 1978-06-06 | 1980-09-09 | Rockwell International Corporation | Self-alignment of gate contacts at local or remote sites |
| US4192059A (en) * | 1978-06-06 | 1980-03-11 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having inherently self-aligned gates and contacts for FET devices and conducting lines |
| US4221045A (en) * | 1978-06-06 | 1980-09-09 | Rockwell International Corporation | Self-aligned contacts in an ion implanted VLSI circuit |
| JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
| CA1131796A (en) * | 1979-01-08 | 1982-09-14 | Tarsaim L. Batra | Method for fabricating mos device with self-aligned contacts |
| DE2923995C2 (en) * | 1979-06-13 | 1985-11-07 | Siemens AG, 1000 Berlin und 8000 München | Process for the production of integrated MOS circuits with MOS transistors and MNOS memory transistors in silicon gate technology |
| JPS5693367A (en) * | 1979-12-20 | 1981-07-28 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
| NL187328C (en) * | 1980-12-23 | 1991-08-16 | Philips Nv | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
-
1982
- 1982-09-22 US US06/421,543 patent/US4517729A/en not_active Expired - Fee Related
-
1983
- 1983-09-09 JP JP58165337A patent/JPS59181564A/en active Pending
- 1983-09-09 CA CA000436405A patent/CA1210528A/en not_active Expired
- 1983-09-10 NL NL8303138A patent/NL8303138A/en not_active Application Discontinuation
- 1983-09-20 FR FR8314927A patent/FR2533370A1/en active Pending
- 1983-09-21 IT IT67973/83A patent/IT1167341B/en active
- 1983-09-22 DE DE19833334333 patent/DE3334333A1/en not_active Withdrawn
- 1983-09-22 GB GB08325446A patent/GB2128807B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2128807A (en) | 1984-05-02 |
| JPS59181564A (en) | 1984-10-16 |
| FR2533370A1 (en) | 1984-03-23 |
| IT8367973A1 (en) | 1985-03-21 |
| US4517729A (en) | 1985-05-21 |
| GB8325446D0 (en) | 1983-10-26 |
| IT8367973A0 (en) | 1983-09-21 |
| GB2128807B (en) | 1986-04-30 |
| CA1210528A (en) | 1986-08-26 |
| NL8303138A (en) | 1984-04-16 |
| DE3334333A1 (en) | 1984-03-22 |
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