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IT1165391B - Dispositivo a barriera di schottky perfezionato - Google Patents

Dispositivo a barriera di schottky perfezionato

Info

Publication number
IT1165391B
IT1165391B IT27738/79A IT2773879A IT1165391B IT 1165391 B IT1165391 B IT 1165391B IT 27738/79 A IT27738/79 A IT 27738/79A IT 2773879 A IT2773879 A IT 2773879A IT 1165391 B IT1165391 B IT 1165391B
Authority
IT
Italy
Prior art keywords
perfected
schottky barrier
barrier device
schottky
perfected schottky
Prior art date
Application number
IT27738/79A
Other languages
English (en)
Other versions
IT7927738A0 (it
Inventor
Richard Ford Dreves
John Frank Fresia
Uk Kim Sang
John James Lajza Jr
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25513652&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1165391(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ibm filed Critical Ibm
Publication of IT7927738A0 publication Critical patent/IT7927738A0/it
Application granted granted Critical
Publication of IT1165391B publication Critical patent/IT1165391B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/061Manufacture or treatment of FETs having Schottky gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/60Schottky-barrier diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D64/011
    • H10P76/40
IT27738/79A 1978-12-11 1979-11-30 Dispositivo a barriera di schottky perfezionato IT1165391B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/968,052 US4261095A (en) 1978-12-11 1978-12-11 Self aligned schottky guard ring

Publications (2)

Publication Number Publication Date
IT7927738A0 IT7927738A0 (it) 1979-11-30
IT1165391B true IT1165391B (it) 1987-04-22

Family

ID=25513652

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27738/79A IT1165391B (it) 1978-12-11 1979-11-30 Dispositivo a barriera di schottky perfezionato

Country Status (5)

Country Link
US (1) US4261095A (it)
EP (1) EP0012220A1 (it)
JP (1) JPS5950233B2 (it)
CA (1) CA1123121A (it)
IT (1) IT1165391B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496982A1 (fr) 1980-12-24 1982-06-25 Labo Electronique Physique Procede de fabrication de transistors a effet de champ, a grille auto-alignee, et transistors ainsi obtenus
US4414737A (en) * 1981-01-30 1983-11-15 Tokyo Shibaura Denki Kabushiki Kaisha Production of Schottky barrier diode
DE3124572A1 (de) * 1981-06-23 1982-12-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von schottky-dioden
US4441931A (en) * 1981-10-28 1984-04-10 Bell Telephone Laboratories, Incorporated Method of making self-aligned guard regions for semiconductor device elements
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
US4533933A (en) * 1982-12-07 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Schottky barrier infrared detector and process
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
US4638345A (en) * 1983-06-01 1987-01-20 Rca Corporation IR imaging array and method of making same
DE3576766D1 (de) * 1984-10-26 1990-04-26 Siemens Ag Schottky-kontakt auf einer halbleiteroberflaeche und verfahren zu dessen herstellung.
US4667395A (en) * 1985-03-29 1987-05-26 International Business Machines Corporation Method for passivating an undercut in semiconductor device preparation
US4669178A (en) * 1986-05-23 1987-06-02 International Business Machines Corporation Process for forming a self-aligned low resistance path in semiconductor devices
US5192993A (en) * 1988-09-27 1993-03-09 Kabushiki Kaisha Toshiba Semiconductor device having improved element isolation area
JP3023853B2 (ja) * 1990-08-23 2000-03-21 富士通株式会社 半導体装置の製造方法
US5270256A (en) * 1991-11-27 1993-12-14 Intel Corporation Method of forming a guard wall to reduce delamination effects
US5859450A (en) * 1997-09-30 1999-01-12 Intel Corporation Dark current reducing guard ring
DE59914804D1 (de) * 1998-05-26 2008-08-21 Infineon Technologies Ag Verfahren zur herstellung von schottky-dioden
US6121122A (en) * 1999-05-17 2000-09-19 International Business Machines Corporation Method of contacting a silicide-based schottky diode
US6699775B2 (en) * 2000-02-22 2004-03-02 International Rectifier Corporation Manufacturing process for fast recovery diode
DE10330838B4 (de) 2003-07-08 2005-08-25 Infineon Technologies Ag Elektronisches Bauelement mit Schutzring
US20050275057A1 (en) * 2004-06-15 2005-12-15 Breen Marc L Schottky diode with dielectric isolation
US20060076639A1 (en) * 2004-10-13 2006-04-13 Lypen William J Schottky diodes and methods of making the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265017A (it) * 1968-08-19 1972-03-01
JPS4826188B1 (it) * 1968-10-04 1973-08-07
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3742315A (en) * 1971-10-18 1973-06-26 Matsushita Electronics Corp Schottky barrier type semiconductor device with improved backward breakdown voltage characteristic
US4026740A (en) * 1975-10-29 1977-05-31 Intel Corporation Process for fabricating narrow polycrystalline silicon members
US4063964A (en) * 1976-12-27 1977-12-20 International Business Machines Corporation Method for forming a self-aligned schottky barrier device guardring

Also Published As

Publication number Publication date
EP0012220A1 (de) 1980-06-25
US4261095A (en) 1981-04-14
JPS5580367A (en) 1980-06-17
JPS5950233B2 (ja) 1984-12-07
IT7927738A0 (it) 1979-11-30
CA1123121A (en) 1982-05-04

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