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IT1140272B - Dispositivo a circuito integrato a semiconduttori - Google Patents

Dispositivo a circuito integrato a semiconduttori

Info

Publication number
IT1140272B
IT1140272B IT24892/81A IT2489281A IT1140272B IT 1140272 B IT1140272 B IT 1140272B IT 24892/81 A IT24892/81 A IT 24892/81A IT 2489281 A IT2489281 A IT 2489281A IT 1140272 B IT1140272 B IT 1140272B
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Application number
IT24892/81A
Other languages
English (en)
Other versions
IT8124892A0 (it
Inventor
Onishi Yoshiaki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8124892A0 publication Critical patent/IT8124892A0/it
Application granted granted Critical
Publication of IT1140272B publication Critical patent/IT1140272B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors
    • H10W20/496

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)
IT24892/81A 1980-11-07 1981-11-05 Dispositivo a circuito integrato a semiconduttori IT1140272B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155946A JPS5780828A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
IT8124892A0 IT8124892A0 (it) 1981-11-05
IT1140272B true IT1140272B (it) 1986-09-24

Family

ID=15616973

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24892/81A IT1140272B (it) 1980-11-07 1981-11-05 Dispositivo a circuito integrato a semiconduttori

Country Status (9)

Country Link
US (1) US4477736A (it)
JP (1) JPS5780828A (it)
DE (1) DE3144001A1 (it)
FR (1) FR2494021B1 (it)
GB (1) GB2087183B (it)
HK (1) HK89684A (it)
IT (1) IT1140272B (it)
MY (1) MY8500849A (it)
SG (1) SG62484G (it)

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US5536977A (en) * 1993-11-30 1996-07-16 Siliconix Incorporated Bidirectional current blocking MOSFET for battery disconnect switching
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US5568085A (en) * 1994-05-16 1996-10-22 Waferscale Integration Inc. Unit for stabilizing voltage on a capacitive node
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JP3255134B2 (ja) * 1999-01-22 2002-02-12 日本電気株式会社 半導体装置の製造方法
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US6943596B2 (en) * 2002-03-12 2005-09-13 Broadcom Corporation Power-on reset circuit for use in low power supply voltage applications
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US6755700B2 (en) * 2002-11-12 2004-06-29 Modevation Enterprises Inc. Reset speed control for watercraft
US7227411B2 (en) * 2003-06-17 2007-06-05 Broadcom Corporation Apparatus for a differential self-biasing CMOS amplifier
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KR100728571B1 (ko) * 2006-02-09 2007-06-15 주식회사 하이닉스반도체 반도체 메모리의 데이터 센싱장치
US7664907B1 (en) 2006-11-02 2010-02-16 Nvidia Corporation Page stream sorter with dynamic binning
US7664905B2 (en) * 2006-11-03 2010-02-16 Nvidia Corporation Page stream sorter for poor locality access patterns
KR101519039B1 (ko) * 2008-11-27 2015-05-11 삼성전자주식회사 입출력 센스 앰프, 이를 포함하는 반도체 메모리 장치, 및 반도체 메모리 장치를 포함하는 메모리 시스템
KR20140071757A (ko) * 2012-12-04 2014-06-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 반도체 메모리의 동작을 위한 기준 전압 생성 방법
CN107431069B (zh) * 2015-03-31 2022-03-01 索尼半导体解决方案公司 开关器件和存储装置
US10643677B2 (en) 2018-06-26 2020-05-05 Sandisk Technologies Llc Negative kick on bit line control transistors for faster bit line settling during sensing
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Also Published As

Publication number Publication date
MY8500849A (en) 1985-12-31
FR2494021B1 (fr) 1986-09-12
HK89684A (en) 1984-11-23
JPS5780828A (en) 1982-05-20
SG62484G (en) 1985-03-15
DE3144001A1 (de) 1982-08-26
GB2087183A (en) 1982-05-19
FR2494021A1 (fr) 1982-05-14
IT8124892A0 (it) 1981-11-05
GB2087183B (en) 1984-04-26
US4477736A (en) 1984-10-16

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19951128