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IT1033277B - METHOD FOR MANUFACTURING BODIES FUSIBLE CRYSTALLINE MATERIAL, IN PARTICULAR SEMI-CONDUCTIVE MATERIAL WITH WHICH A CONTINUOUS CRYSTALLINE STRAP OF SAID MATERIAL IS PRODUCED AND BODY MANUFACTURED BY USING THIS METHOD - Google Patents

METHOD FOR MANUFACTURING BODIES FUSIBLE CRYSTALLINE MATERIAL, IN PARTICULAR SEMI-CONDUCTIVE MATERIAL WITH WHICH A CONTINUOUS CRYSTALLINE STRAP OF SAID MATERIAL IS PRODUCED AND BODY MANUFACTURED BY USING THIS METHOD

Info

Publication number
IT1033277B
IT1033277B IT20750/75A IT2075075A IT1033277B IT 1033277 B IT1033277 B IT 1033277B IT 20750/75 A IT20750/75 A IT 20750/75A IT 2075075 A IT2075075 A IT 2075075A IT 1033277 B IT1033277 B IT 1033277B
Authority
IT
Italy
Prior art keywords
crystalline
strap
produced
fusible
body manufactured
Prior art date
Application number
IT20750/75A
Other languages
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1033277B publication Critical patent/IT1033277B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT20750/75A 1974-03-01 1975-02-27 METHOD FOR MANUFACTURING BODIES FUSIBLE CRYSTALLINE MATERIAL, IN PARTICULAR SEMI-CONDUCTIVE MATERIAL WITH WHICH A CONTINUOUS CRYSTALLINE STRAP OF SAID MATERIAL IS PRODUCED AND BODY MANUFACTURED BY USING THIS METHOD IT1033277B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7407044A FR2262554B1 (en) 1974-03-01 1974-03-01

Publications (1)

Publication Number Publication Date
IT1033277B true IT1033277B (en) 1979-07-10

Family

ID=9135672

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20750/75A IT1033277B (en) 1974-03-01 1975-02-27 METHOD FOR MANUFACTURING BODIES FUSIBLE CRYSTALLINE MATERIAL, IN PARTICULAR SEMI-CONDUCTIVE MATERIAL WITH WHICH A CONTINUOUS CRYSTALLINE STRAP OF SAID MATERIAL IS PRODUCED AND BODY MANUFACTURED BY USING THIS METHOD

Country Status (8)

Country Link
JP (1) JPS5443997B2 (en)
BE (1) BE826094A (en)
DE (1) DE2508651C3 (en)
DK (1) DK152059C (en)
FR (1) FR2262554B1 (en)
GB (1) GB1490114A (en)
IT (1) IT1033277B (en)
NL (1) NL7502202A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10960659B2 (en) 2014-07-02 2021-03-30 Rotoprint Sovrastampa S.R.L. System and method for overprinting on packages and/or containers of different formats

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
EP0115711B1 (en) * 1983-02-09 1986-10-08 Commissariat à l'Energie Atomique Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould
JP3875314B2 (en) * 1996-07-29 2007-01-31 日本碍子株式会社 Silicon crystal plate growth method, silicon crystal plate growth apparatus, silicon crystal plate, and solar cell element manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7004876A (en) * 1970-04-04 1971-10-06
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10960659B2 (en) 2014-07-02 2021-03-30 Rotoprint Sovrastampa S.R.L. System and method for overprinting on packages and/or containers of different formats

Also Published As

Publication number Publication date
DK76775A (en) 1975-11-03
JPS50126164A (en) 1975-10-03
FR2262554B1 (en) 1977-06-17
JPS5443997B2 (en) 1979-12-22
DE2508651A1 (en) 1975-09-25
BE826094A (en) 1975-08-27
NL7502202A (en) 1975-09-03
DK152059B (en) 1988-01-25
FR2262554A1 (en) 1975-09-26
GB1490114A (en) 1977-10-26
DE2508651C3 (en) 1981-09-17
DK152059C (en) 1988-07-11
DE2508651B2 (en) 1980-09-18

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