IT1025835B - Dispositivo semiconduttore - Google Patents

Dispositivo semiconduttore

Info

Publication number: IT1025835B
Authority: IT; Italy
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1973-11-19

Application number

IT29607/74A

Other languages

English (en)

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-11-19

Filing date

1974-11-19

Publication date

1978-08-30

1974-11-19 Application filed by Sony Corp filed Critical Sony Corp

1978-08-30 Application granted granted Critical

1978-08-30 Publication of IT1025835B publication Critical patent/IT1025835B/it

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H10W72/00—

IT29607/74A 1973-11-19 1974-11-19 Dispositivo semiconduttore IT1025835B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP12992473A JPS5616553B2 (it)	1973-11-19	1973-11-19

Publications (1)

Publication Number	Publication Date
IT1025835B true IT1025835B (it)	1978-08-30

Family

ID=15021762

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT29607/74A IT1025835B (it)	1973-11-19	1974-11-19	Dispositivo semiconduttore

Country Status (8)

Country	Link
US (1)	US3968511A (it)
JP (1)	JPS5616553B2 (it)
CA (1)	CA999980A (it)
DE (1)	DE2454561A1 (it)
FR (1)	FR2251916B1 (it)
GB (1)	GB1487764A (it)
IT (1)	IT1025835B (it)
NL (1)	NL7415073A (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1061510B (it) *	1975-06-30	1983-04-30	Rca Corp	Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso
US4178190A (en)	1975-06-30	1979-12-11	Rca Corporation	Method of making a bipolar transistor with high-low emitter impurity concentration
US4158206A (en) *	1977-02-07	1979-06-12	Rca Corporation	Semiconductor device
US4157560A (en) *	1977-12-30	1979-06-05	International Business Machines Corporation	Photo detector cell
DE2827330C2 (de) *	1978-06-22	1982-10-21	Deutsche Itt Industries Gmbh, 7800 Freiburg	Verfahren zur Verminderung des Breitbandrauschens
US6448589B1 (en) *	2000-05-19	2002-09-10	Teccor Electronics, L.P.	Single side contacts for a semiconductor device
US6862162B2 (en) *	2003-04-23	2005-03-01	Teccor Electronics, Lp	Thyristor circuit providing overcurrent protection to a low impedance load

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3444443A (en) *	1966-12-26	1969-05-13	Hitachi Ltd	Semiconductor device for high frequency and high power use

1973
- 1973-11-19 JP JP12992473A patent/JPS5616553B2/ja not_active Expired
1974
- 1974-11-07 GB GB48300/74A patent/GB1487764A/en not_active Expired
- 1974-11-11 US US05/522,773 patent/US3968511A/en not_active Expired - Lifetime
- 1974-11-18 CA CA213,927A patent/CA999980A/en not_active Expired
- 1974-11-18 FR FR7437957A patent/FR2251916B1/fr not_active Expired
- 1974-11-18 DE DE19742454561 patent/DE2454561A1/de not_active Withdrawn
- 1974-11-19 IT IT29607/74A patent/IT1025835B/it active
- 1974-11-19 NL NL7415073A patent/NL7415073A/xx not_active Application Discontinuation

Also Published As

Publication number	Publication date
NL7415073A (nl)	1975-05-21
GB1487764A (en)	1977-10-05
FR2251916A1 (it)	1975-06-13
CA999980A (en)	1976-11-16
US3968511A (en)	1976-07-06
FR2251916B1 (it)	1977-01-21
DE2454561A1 (de)	1975-07-24
JPS5616553B2 (it)	1981-04-16
JPS5081478A (it)	1975-07-02

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Legal Events

Date	Code	Title	Description
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19931127