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IN2014DE00708A - - Google Patents

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Publication number
IN2014DE00708A
IN2014DE00708A IN708DE2014A IN2014DE00708A IN 2014DE00708 A IN2014DE00708 A IN 2014DE00708A IN 708DE2014 A IN708DE2014 A IN 708DE2014A IN 2014DE00708 A IN2014DE00708 A IN 2014DE00708A
Authority
IN
India
Prior art keywords
light
organic
organic thin
emitting
bulk region
Prior art date
Application number
Inventor
MAZHARI Baquer
GANGWAR Ankita
Original Assignee
Indian Inst Technology Kanpur
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Inst Technology Kanpur filed Critical Indian Inst Technology Kanpur
Priority to IN708DE2014 priority Critical patent/IN2014DE00708A/en
Priority to US14/644,220 priority patent/US9536935B2/en
Priority to CN201510109094.0A priority patent/CN104916659B/en
Publication of IN2014DE00708A publication Critical patent/IN2014DE00708A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)

Abstract

A novel light-emitting device includes an organic thin-film structure that is merged with an organic light-emitting diode structure by utilizing a part of the electron accumulation layer in the organic thin-film transistor as a common electrode for each structure. The organic thin-film structure and the organic light-emitting diode structure each include an organic semiconductor that comprises a material in which hole mobility is greater in a bulk region of the material than electron mobility in the bulk region. The advantages of such a light-emitting device include less complex processing and a simpler pixel circuit structure in comparison to separately fabricating OTFT and OLED structures and subsequently interconnecting them to form a pixel. Furthermore, relative to a light-emitting transistor, some embodiments offer the advantage of a broader light emission area more suitable for use in display devices.
IN708DE2014 2014-03-12 2014-03-12 IN2014DE00708A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IN708DE2014 IN2014DE00708A (en) 2014-03-12 2014-03-12
US14/644,220 US9536935B2 (en) 2014-03-12 2015-03-11 Organic thin film transistor merged with a light emitting diode using an accumulation layer as electrode
CN201510109094.0A CN104916659B (en) 2014-03-12 2015-03-12 The OTFT merged with light emitting diode using accumulation layer as electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN708DE2014 IN2014DE00708A (en) 2014-03-12 2014-03-12

Publications (1)

Publication Number Publication Date
IN2014DE00708A true IN2014DE00708A (en) 2015-09-18

Family

ID=54069477

Family Applications (1)

Application Number Title Priority Date Filing Date
IN708DE2014 IN2014DE00708A (en) 2014-03-12 2014-03-12

Country Status (3)

Country Link
US (1) US9536935B2 (en)
CN (1) CN104916659B (en)
IN (1) IN2014DE00708A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107369784B (en) * 2017-08-31 2019-11-26 深圳市华星光电半导体显示技术有限公司 OLED-TFT substrate and its manufacturing method, display panel
TWI667780B (en) * 2018-08-02 2019-08-01 友達光電股份有限公司 Display panel
CN111192969B (en) * 2020-01-08 2021-01-05 大连理工大学 Structure and preparation method of light-emitting field effect transistor based on poly-F8BT crystal
JP7428977B2 (en) * 2021-02-03 2024-02-07 Jsr株式会社 Display manufacturing method and display
US20240290903A1 (en) * 2023-02-28 2024-08-29 Novatek Microelectronics Corp. Light sensing transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4366039B2 (en) * 2002-02-04 2009-11-18 キヤノン株式会社 Organic semiconductor device and manufacturing method thereof
TW554525B (en) 2002-08-28 2003-09-21 Ind Tech Res Inst Organic integration device of thin film transistor and light emitting diode
KR100669733B1 (en) * 2004-10-14 2007-01-16 삼성에스디아이 주식회사 Organic thin film transistor and organic light emitting display device using same
CN101188246A (en) * 2006-11-15 2008-05-28 群康科技(深圳)有限公司 Top luminescent organic LED and its making method
GB2450675A (en) 2007-04-04 2009-01-07 Cambridge Display Tech Ltd Active matrix organic displays
US20120176356A1 (en) * 2009-09-30 2012-07-12 Sharp Kabushiki Kaisha Display device
RU2012117754A (en) * 2009-09-30 2013-11-10 Шарп Кабусики Кайся DISPLAY DEVICE
US9105728B2 (en) * 2012-07-24 2015-08-11 Qualcomm Mems Technologies, Inc. Multi-gate thin-film transistor

Also Published As

Publication number Publication date
CN104916659B (en) 2017-12-26
US9536935B2 (en) 2017-01-03
US20150262531A1 (en) 2015-09-17
CN104916659A (en) 2015-09-16

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