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IN2012DN02236A - - Google Patents

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Publication number
IN2012DN02236A
IN2012DN02236A IN2236DEN2012A IN2012DN02236A IN 2012DN02236 A IN2012DN02236 A IN 2012DN02236A IN 2236DEN2012 A IN2236DEN2012 A IN 2236DEN2012A IN 2012DN02236 A IN2012DN02236 A IN 2012DN02236A
Authority
IN
India
Prior art keywords
diode
semiconductor laser
pulse generator
electrical pulse
mounting fixture
Prior art date
Application number
Inventor
Steven James Telford
Anthony S Ladran
Original Assignee
L Livermore Nat Security Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L Livermore Nat Security Llc filed Critical L Livermore Nat Security Llc
Publication of IN2012DN02236A publication Critical patent/IN2012DN02236A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.
IN2236DEN2012 2009-09-03 2010-09-02 IN2012DN02236A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23956909P 2009-09-03 2009-09-03
US12/813,662 US8660156B2 (en) 2009-09-03 2010-06-11 Method and system for powering and cooling semiconductor lasers
PCT/US2010/047719 WO2011028932A1 (en) 2009-09-03 2010-09-02 Method and system for powering and cooling semiconductor lasers

Publications (1)

Publication Number Publication Date
IN2012DN02236A true IN2012DN02236A (en) 2015-08-21

Family

ID=43624838

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2236DEN2012 IN2012DN02236A (en) 2009-09-03 2010-09-02

Country Status (9)

Country Link
US (1) US8660156B2 (en)
EP (1) EP2462665B1 (en)
JP (1) JP5740685B2 (en)
KR (1) KR101721282B1 (en)
CN (1) CN102640368A (en)
CA (1) CA2772710C (en)
IN (1) IN2012DN02236A (en)
RU (1) RU2012112805A (en)
WO (1) WO2011028932A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10454244B2 (en) 2017-08-09 2019-10-22 Lawrence Livermore National Security, Llc Driver circuitry and systems for high current laser diode arrays

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CN104428879B (en) * 2012-05-30 2018-01-30 应用材料公司 Apparatus and method for rapid heat treatment
US9972969B2 (en) * 2013-02-28 2018-05-15 Lawrence Livermore National Security, Llc Compact high current, high efficiency laser diode driver
US10539280B2 (en) 2015-01-29 2020-01-21 Mitsubishi Electric Corporation Light-source device
DE102015203269A1 (en) * 2015-02-24 2016-08-25 Siemens Aktiengesellschaft Storage system for storing electrical energy
US11025031B2 (en) 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
US10511142B2 (en) * 2017-05-03 2019-12-17 Analog Modules, Inc. Pulsed laser diode drivers and methods
FR3068463B1 (en) 2017-06-30 2019-07-26 Continental Automotive France CURRENT SENSOR
CA3109659C (en) 2018-08-13 2023-10-31 Leonardo Electronics Us Inc. Use of metal-core printed circuit board (pcb) for generation of ultra-narrow, high-current pulse driver
DE102019121924B4 (en) * 2018-08-14 2026-01-22 Leonardo Electronics Us Inc. LASER ASSEMBLY AND ASSOCIATED METHODS
US11296481B2 (en) 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
US11752571B1 (en) 2019-06-07 2023-09-12 Leonardo Electronics Us Inc. Coherent beam coupler
EP3792683A1 (en) 2019-09-16 2021-03-17 Leonardo Electronics US Inc. Asymmetric input intensity hexagonal homogenizer
JP2022025692A (en) * 2020-07-29 2022-02-10 株式会社リコー Lighting module, distance measuring device, mobile body, and light source drive circuit

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US5444728A (en) * 1993-12-23 1995-08-22 Polaroid Corporation Laser driver circuit
US5463648A (en) * 1994-08-01 1995-10-31 Litton Systems, Inc. Pulse forming network for diode laser
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10454244B2 (en) 2017-08-09 2019-10-22 Lawrence Livermore National Security, Llc Driver circuitry and systems for high current laser diode arrays

Also Published As

Publication number Publication date
CA2772710C (en) 2018-08-07
US20110051759A1 (en) 2011-03-03
KR101721282B1 (en) 2017-03-29
EP2462665A4 (en) 2017-08-09
WO2011028932A1 (en) 2011-03-10
KR20120099004A (en) 2012-09-06
JP5740685B2 (en) 2015-06-24
EP2462665A1 (en) 2012-06-13
EP2462665B1 (en) 2021-11-03
CN102640368A (en) 2012-08-15
US8660156B2 (en) 2014-02-25
RU2012112805A (en) 2013-10-10
JP2013504214A (en) 2013-02-04
CA2772710A1 (en) 2011-03-10

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