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IN2012DE00981A - - Google Patents

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Publication number
IN2012DE00981A
IN2012DE00981A IN981DE2012A IN2012DE00981A IN 2012DE00981 A IN2012DE00981 A IN 2012DE00981A IN 981DE2012 A IN981DE2012 A IN 981DE2012A IN 2012DE00981 A IN2012DE00981 A IN 2012DE00981A
Authority
IN
India
Prior art keywords
texture
lacquer layer
includes providing
light management
substrate
Prior art date
Application number
Inventor
Jos Rutten
Rob Van Erven
Original Assignee
Moser Baer India Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Moser Baer India Ltd filed Critical Moser Baer India Ltd
Priority to IN981DE2012 priority Critical patent/IN2012DE00981A/en
Priority to EP13161322.6A priority patent/EP2645420A3/en
Priority to US13/852,066 priority patent/US20130295713A1/en
Publication of IN2012DE00981A publication Critical patent/IN2012DE00981A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H10F71/1385—Etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A method for manufacturing an optoelectronic device is provided. The method includes providing a substrate. Thereafter, the method includes providing a lacquer layer on the substrate. The method further includes providing light management texture in the lacquer layer. Providing light management texture in the lacquer layer includes providing a replication substrate having a negative texture and imprinting the negative texture into the lacquer layer using the replication substrate, such that the light management texture is created in the lacquer layer. Furthermore, the method includes providing a first electrode layer on the lacquer layer. The method further includes etching, prior to deposition of first electrode layer, to enable formation of less steep light management texture in the lacquer layer and subsequently less steep texture on first electrode layer by etching at least one of the textures in the production of the negative texture on the replication substrate, or the light management texture on the lacquer layer itself.
IN981DE2012 2012-03-30 2012-03-30 IN2012DE00981A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IN981DE2012 IN2012DE00981A (en) 2012-03-30 2012-03-30
EP13161322.6A EP2645420A3 (en) 2012-03-30 2013-03-27 Modification and optimization of a light management layer for thin film solar cells
US13/852,066 US20130295713A1 (en) 2012-03-30 2013-03-28 Modification and Optimization of a Light Management Area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN981DE2012 IN2012DE00981A (en) 2012-03-30 2012-03-30

Publications (1)

Publication Number Publication Date
IN2012DE00981A true IN2012DE00981A (en) 2015-09-11

Family

ID=47998269

Family Applications (1)

Application Number Title Priority Date Filing Date
IN981DE2012 IN2012DE00981A (en) 2012-03-30 2012-03-30

Country Status (3)

Country Link
US (1) US20130295713A1 (en)
EP (1) EP2645420A3 (en)
IN (1) IN2012DE00981A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9460019B2 (en) * 2014-06-26 2016-10-04 Intel Corporation Sending packets using optimized PIO write sequences without SFENCEs
CN112635591A (en) * 2020-12-22 2021-04-09 泰州隆基乐叶光伏科技有限公司 Preparation method of solar cell and solar cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090266415A1 (en) * 2006-06-27 2009-10-29 Liquidia Technologies , Inc. Nanostructures and materials for photovoltaic devices
KR101494153B1 (en) * 2007-12-21 2015-02-23 주성엔지니어링(주) Thin film solar cell and its manufacturing method
US20100258163A1 (en) * 2009-04-14 2010-10-14 Honeywell International Inc. Thin-film photovoltaics
TWI458126B (en) * 2009-12-10 2014-10-21 Nat Inst Chung Shan Science & Technology Method for manufacturing film structure for forming light-emitting elements by nanoimprinting
KR20120112004A (en) * 2011-03-31 2012-10-11 모저 베어 인디아 엘티디 Method for patterning a lacquer layer to hold electrical gridlines
JP2012222346A (en) * 2011-04-08 2012-11-12 Moser Baer India Ltd Method for transferring electrical gridlines on lacquer layer
IN2012DE00891A (en) * 2012-03-27 2015-09-11 Moser Baer India Ltd

Also Published As

Publication number Publication date
EP2645420A2 (en) 2013-10-02
EP2645420A3 (en) 2014-06-18
US20130295713A1 (en) 2013-11-07

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