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IL84184A0 - Multilayer resist structure - Google Patents

Multilayer resist structure

Info

Publication number
IL84184A0
IL84184A0 IL84184A IL8418487A IL84184A0 IL 84184 A0 IL84184 A0 IL 84184A0 IL 84184 A IL84184 A IL 84184A IL 8418487 A IL8418487 A IL 8418487A IL 84184 A0 IL84184 A0 IL 84184A0
Authority
IL
Israel
Prior art keywords
multilayer resist
resist structure
multilayer
resist
Prior art date
Application number
IL84184A
Other languages
English (en)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL84184A0 publication Critical patent/IL84184A0/xx

Links

Classifications

    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H10P14/683—
    • H10P50/287—
    • H10P76/2045—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
IL84184A 1986-11-12 1987-10-16 Multilayer resist structure IL84184A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92968386A 1986-11-12 1986-11-12

Publications (1)

Publication Number Publication Date
IL84184A0 true IL84184A0 (en) 1988-03-31

Family

ID=25458273

Family Applications (1)

Application Number Title Priority Date Filing Date
IL84184A IL84184A0 (en) 1986-11-12 1987-10-16 Multilayer resist structure

Country Status (5)

Country Link
EP (1) EP0289595A1 (xx)
JP (1) JPH01501345A (xx)
KR (1) KR910007532B1 (xx)
IL (1) IL84184A0 (xx)
WO (1) WO1988003703A1 (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171401A (en) * 1990-06-04 1992-12-15 Eastman Kodak Company Plasma etching indium tin oxide
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
WO2019098208A1 (ja) * 2017-11-17 2019-05-23 三井化学株式会社 半導体素子中間体、金属含有膜形成用組成物、半導体素子中間体の製造方法、半導体素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451971A (en) * 1982-08-02 1984-06-05 Fairchild Camera And Instrument Corporation Lift-off wafer processing
KR890003903B1 (ko) * 1983-06-29 1989-10-10 가부시끼가이샤 히다찌세이사꾸쇼 패턴 형성 방법
US4595649A (en) * 1985-02-19 1986-06-17 Allied Corporation Glassy TiO2 polymer films as electron beam charge dissipation layers

Also Published As

Publication number Publication date
JPH01501345A (ja) 1989-05-11
KR910007532B1 (ko) 1991-09-27
WO1988003703A1 (en) 1988-05-19
KR890700263A (ko) 1989-03-10
EP0289595A1 (en) 1988-11-09

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