IL140229A0 - Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers - Google Patents
Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computersInfo
- Publication number
- IL140229A0 IL140229A0 IL14022900A IL14022900A IL140229A0 IL 140229 A0 IL140229 A0 IL 140229A0 IL 14022900 A IL14022900 A IL 14022900A IL 14022900 A IL14022900 A IL 14022900A IL 140229 A0 IL140229 A0 IL 140229A0
- Authority
- IL
- Israel
- Prior art keywords
- nanotechnology
- computers
- things
- replacing
- hard disk
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Seasonings (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL14022900A IL140229A0 (en) | 2000-12-11 | 2000-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
| CA002431364A CA2431364A1 (en) | 2000-12-11 | 2001-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
| PCT/IL2001/001146 WO2002048822A2 (en) | 2000-12-11 | 2001-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
| AU2002222474A AU2002222474A1 (en) | 2000-12-11 | 2001-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
| US10/457,388 US20030218927A1 (en) | 2000-12-11 | 2003-06-10 | RAM memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL14022900A IL140229A0 (en) | 2000-12-11 | 2000-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL140229A0 true IL140229A0 (en) | 2002-02-10 |
Family
ID=11074915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL14022900A IL140229A0 (en) | 2000-12-11 | 2000-12-11 | Ram memory based on nanotechnology, capable, among other things, of replacing the hard disk in computers |
Country Status (4)
| Country | Link |
|---|---|
| AU (1) | AU2002222474A1 (en) |
| CA (1) | CA2431364A1 (en) |
| IL (1) | IL140229A0 (en) |
| WO (1) | WO2002048822A2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
| US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
| US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
| US7566478B2 (en) | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
| US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
| US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
| US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
| US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
| US7176505B2 (en) | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
| US7335395B2 (en) | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| US7560136B2 (en) | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2278013B (en) * | 1993-05-10 | 1996-11-13 | Hitachi Europ Ltd | Method of forming nano-scale electronic device |
| US5684621A (en) * | 1995-05-08 | 1997-11-04 | Downing; Elizabeth Anne | Method and system for three-dimensional display of information based on two-photon upconversion |
| US6034883A (en) * | 1998-01-29 | 2000-03-07 | Tinney; Charles E. | Solid state director for beams |
| US6016269A (en) * | 1998-09-30 | 2000-01-18 | Motorola, Inc. | Quantum random address memory with magnetic readout and/or nano-memory elements |
-
2000
- 2000-12-11 IL IL14022900A patent/IL140229A0/en unknown
-
2001
- 2001-12-11 CA CA002431364A patent/CA2431364A1/en not_active Abandoned
- 2001-12-11 WO PCT/IL2001/001146 patent/WO2002048822A2/en not_active Ceased
- 2001-12-11 AU AU2002222474A patent/AU2002222474A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002222474A1 (en) | 2002-06-24 |
| WO2002048822A2 (en) | 2002-06-20 |
| CA2431364A1 (en) | 2002-06-20 |
| WO2002048822A3 (en) | 2002-10-17 |
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