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IL145808A - Slicing of single-crystal films using ion implantation - Google Patents

Slicing of single-crystal films using ion implantation

Info

Publication number
IL145808A
IL145808A IL14580800A IL14580800A IL145808A IL 145808 A IL145808 A IL 145808A IL 14580800 A IL14580800 A IL 14580800A IL 14580800 A IL14580800 A IL 14580800A IL 145808 A IL145808 A IL 145808A
Authority
IL
Israel
Prior art keywords
slicing
ion implantation
crystal films
films
crystal
Prior art date
Application number
IL14580800A
Other languages
English (en)
Other versions
IL145808A0 (en
Original Assignee
Univ Columbia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Columbia filed Critical Univ Columbia
Publication of IL145808A0 publication Critical patent/IL145808A0/xx
Publication of IL145808A publication Critical patent/IL145808A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H10P50/642—
    • H10P90/1914—
    • H10P90/1916—
    • H10W10/181—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
IL14580800A 1999-04-09 2000-04-07 Slicing of single-crystal films using ion implantation IL145808A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/289,169 US6503321B2 (en) 1998-02-17 1999-04-09 Slicing of single-crystal films using ion implantation
PCT/US2000/009442 WO2000061841A1 (en) 1999-04-09 2000-04-07 Slicing of single-crystal films using ion implantation

Publications (2)

Publication Number Publication Date
IL145808A0 IL145808A0 (en) 2002-07-25
IL145808A true IL145808A (en) 2005-03-20

Family

ID=23110347

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14580800A IL145808A (en) 1999-04-09 2000-04-07 Slicing of single-crystal films using ion implantation

Country Status (10)

Country Link
US (1) US6503321B2 (xx)
EP (1) EP1171653A1 (xx)
JP (1) JP2002541673A (xx)
KR (1) KR20010105417A (xx)
CN (1) CN1371434A (xx)
AU (1) AU5122600A (xx)
CA (1) CA2365992A1 (xx)
IL (1) IL145808A (xx)
MX (1) MXPA01010112A (xx)
WO (1) WO2000061841A1 (xx)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6540827B1 (en) * 1998-02-17 2003-04-01 Trustees Of Columbia University In The City Of New York Slicing of single-crystal films using ion implantation
KR100796249B1 (ko) * 1999-12-24 2008-01-21 신에쯔 한도타이 가부시키가이샤 접합 웨이퍼의 제조방법
FR2807074B1 (fr) 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
EP1273035B1 (fr) 2000-04-14 2012-09-12 Soitec Procede pour la decoupe d'au moins une couche mince dans un substrat ou lingot, notamment en materiau(x) semi-conducteur(s)
JP4749584B2 (ja) * 2001-03-30 2011-08-17 株式会社豊田中央研究所 半導体基板の製造方法
FR2842650B1 (fr) * 2002-07-17 2005-09-02 Soitec Silicon On Insulator Procede de fabrication de substrats notamment pour l'optique, l'electronique ou l'opto-electronique
DE60315670T2 (de) * 2002-07-17 2008-06-05 S.O.I.Tec Silicon On Insulator Technologies Verfahren zur herstellung von substraten, insbesondere für die optik, elektronik und optoelektronik
US6638872B1 (en) 2002-09-26 2003-10-28 Motorola, Inc. Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates
JP4653391B2 (ja) * 2003-09-08 2011-03-16 株式会社リコー 光制御素子の製造方法
US7312092B2 (en) * 2003-12-17 2007-12-25 The Trustees Of Columbia University In The City Of New York Methods for fabrication of localized membranes on single crystal substrate surfaces
KR100632460B1 (ko) * 2005-02-03 2006-10-11 삼성전자주식회사 반도체 소자의 제조 방법
US8124499B2 (en) * 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US20080188011A1 (en) * 2007-01-26 2008-08-07 Silicon Genesis Corporation Apparatus and method of temperature conrol during cleaving processes of thick film materials
CN102592977B (zh) * 2007-06-20 2015-03-25 株式会社半导体能源研究所 半导体装置的制造方法
US20090060411A1 (en) * 2007-09-05 2009-03-05 Michigan Technological University Planar magnetization latching in magneto-optic films
FR2924272B1 (fr) * 2007-11-28 2010-06-11 Commissariat Energie Atomique Procede de transfert de films
DE102010030358B4 (de) * 2010-06-22 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zum Abtrennen einer Substratscheibe
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
CN103696022B (zh) * 2013-12-27 2016-04-13 贵州蓝科睿思技术研发中心 一种离子注入分离蓝宝石的方法
CN105734518B (zh) * 2016-03-14 2018-04-10 云南科威液态金属谷研发有限公司 一种液态金属材料基因编辑方法
US10302864B2 (en) 2016-06-02 2019-05-28 Ohio State Innovation Foundation Method of forming a deterministic thin film from a crystal substrate by etching a bilayer bonding interface to create a channel
CN106222754A (zh) * 2016-07-29 2016-12-14 成都立威讯科技有限公司 一种工艺精湛的蓝宝石分离方法
EP3373052A1 (de) * 2017-03-06 2018-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbzeug, verfahren zu dessen herstellung und damit hergestellte komponente
JP7127472B2 (ja) * 2018-10-15 2022-08-30 日本電信電話株式会社 波長変換素子の作製方法
CN109468683A (zh) * 2018-12-19 2019-03-15 山东建筑大学 一种基于He离子辐照的石榴石晶体薄膜的制备方法
FR3091619B1 (fr) * 2019-01-07 2021-01-29 Commissariat Energie Atomique Procédé de guérison avant transfert d’une couche semi-conductrice
CN111257995A (zh) * 2020-02-12 2020-06-09 深圳技术大学 一种高折射率差yag单晶异质结构薄膜波导及其制备方法
CN112542379B (zh) * 2020-12-09 2022-11-08 济南晶正电子科技有限公司 一种薄膜图形化工艺方法、复合薄膜及电子元器件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808068A (en) * 1972-12-11 1974-04-30 Bell Telephone Labor Inc Differential etching of garnet materials
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
JP2560251B2 (ja) * 1994-03-18 1996-12-04 工業技術院長 シリコン単結晶自己支持薄膜の製造法
US5587210A (en) * 1994-06-28 1996-12-24 The United States Of America As Represented By The Secretary Of The Navy Growing and releasing diamonds
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
FR2756847B1 (fr) * 1996-12-09 1999-01-08 Commissariat Energie Atomique Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
TW422826B (en) * 1997-09-25 2001-02-21 Tdk Corp Radio wave absorbent
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films

Also Published As

Publication number Publication date
MXPA01010112A (es) 2003-07-14
CA2365992A1 (en) 2000-10-19
CN1371434A (zh) 2002-09-25
US20020053318A1 (en) 2002-05-09
JP2002541673A (ja) 2002-12-03
KR20010105417A (ko) 2001-11-28
AU5122600A (en) 2000-11-14
WO2000061841A1 (en) 2000-10-19
IL145808A0 (en) 2002-07-25
EP1171653A1 (en) 2002-01-16
US6503321B2 (en) 2003-01-07

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