IE42143B1 - Superhard martensite and method of making the same - Google Patents
Superhard martensite and method of making the sameInfo
- Publication number
- IE42143B1 IE42143B1 IE2443/74A IE244374A IE42143B1 IE 42143 B1 IE42143 B1 IE 42143B1 IE 2443/74 A IE2443/74 A IE 2443/74A IE 244374 A IE244374 A IE 244374A IE 42143 B1 IE42143 B1 IE 42143B1
- Authority
- IE
- Ireland
- Prior art keywords
- substrate
- steel
- martensite
- iron
- superhard
- Prior art date
Links
- 229910000734 martensite Inorganic materials 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 48
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 25
- 239000010959 steel Substances 0.000 claims abstract description 25
- 150000002500 ions Chemical class 0.000 claims abstract description 22
- 229910052742 iron Inorganic materials 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 14
- 238000005275 alloying Methods 0.000 claims abstract description 10
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 9
- 229910052734 helium Inorganic materials 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 229910052754 neon Inorganic materials 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 238000010849 ion bombardment Methods 0.000 claims abstract description 7
- 229910052743 krypton Inorganic materials 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 229910052776 Thorium Inorganic materials 0.000 claims abstract description 6
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 6
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 6
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 6
- 229910052699 polonium Inorganic materials 0.000 claims abstract description 6
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 6
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 6
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 6
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 6
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 6
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052730 francium Inorganic materials 0.000 claims description 5
- KLMCZVJOEAUDNE-UHFFFAOYSA-N francium atom Chemical compound [Fr] KLMCZVJOEAUDNE-UHFFFAOYSA-N 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 229910052705 radium Inorganic materials 0.000 claims description 5
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052704 radon Inorganic materials 0.000 claims description 5
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 5
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 238000010791 quenching Methods 0.000 claims description 3
- 230000000171 quenching effect Effects 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 229910001009 interstitial alloy Inorganic materials 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- 101000916532 Rattus norvegicus Zinc finger and BTB domain-containing protein 38 Proteins 0.000 claims 1
- 229910001566 austenite Inorganic materials 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- -1 lanthamum Chemical compound 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- BJURWZBIJTZDMV-UHFFFAOYSA-N argon Chemical compound [Ar].[Ar].[Ar] BJURWZBIJTZDMV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/06—Surface hardening
- C21D1/09—Surface hardening by direct application of electrical or wave energy; by particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D2211/00—Microstructure comprising significant phases
- C21D2211/008—Martensite
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Abstract
1483891 Ion implantation; hardening steel surfaces N N ENGEL 15 Nov 1974 [14 Dec 1973] 49506/74 Heading C7U A steel substrate containing 0.3 to 1.8% of interstitial alloying atoms is implanted with ions of an element which is insoluble in iron by ionbombardment, and then heat-treated to produce a superhard martensitic structure. The substrate may initially contain Be, B, C or N as interstitial alloying atoms, or these may be alloyed therewith after ion-bombardment. The steel may be cleaned before placing in a vacuum chamber as the cathode, and the chamber is flushed with inert gas prior to bombarding with ions of He, Ne, Ar, Kr, Xe, Rn, Li, Na, K, Rb, Cs, Fr, Ca, Sr, Ba, Ra, Ag, Cd, Hg, Tl, Pb, Bi, Mg, Y, La, Zr, Hf, Th, Ta, Cu, In, Se, Te or Po; preferred ions are those of size similar to Fe. The steel is then heated into the austenite range and quenched in water, oil, or air to produce a superhard martensite, e.g. of Knoop hardness above 1000, and of maximum grain size 0.001 mm.
Description
This invention relates to an ion implanted hardened steel and more particularly to a superhard martensite and method of making the same.
Various techniques have been employed to coat the surface of a substrate with a material.including ion deposition. An apparatus employed by me for such ion planting as hereinafter described is described in NASA Technical Note D-2707, Deposition of Thin Films by Ion Planting on Surfaces Having Various Configurations, by T Spalvins, et al, November 1965.
A steel substrate has a cubic body-centered lattice. When the substrate is heated, the configuration changes to a cubic face-centered lattice (austenite) which, when quenched, forms a tetragonal body-centered lattice. The tetragonal form is martensite.
By nucleating and/or inhibiting the growth of the martensite grain in the hardening process, a super-fine grain will be obtained. The finer the grain in the martensite the harder will be the steel. Simultaneously insoluble embedded atoms act as barriers for the movement of dislocations contributing further to hardness and strength.
Briefly described, the growth of martensite grains is inhibited by ion implanting in the substrate (steel matrix) a sufficient amount of any element which is insoluble in iron. These elements include helium, neon, argon, krypton, xenon, radon, lithium, sodium, potassium, rubidium, cesium, francium, calcium, strontium, barium, radium, silver, cadmium, mercury, thallium, lead and bismuth. The following additional elements can be utilized in the present method as they all possess a marked low solubility in iron or have a solubility limit: beryllium, magnesium, yttrium, lanthamum, zirconium, hafnium, thorium, tantalum, copper, indium, selenium, tellurium, and polonium. This process produces an exceptionally hard martensite useful in producing excellent cutting tools with wear resistant surfaces - it also can be used for example in gear wheels, ball bearings, or measuring tools. The fine-grained martensite also provides improved fatigue and impact strength useful for example in springs or hammers.
According to a first aspect of the present invention I provide a method of treating a steel substrate, containing from 0.3 to 1.8% by weight of interstitial alloying atoms, in order to produce a superhardened martensite structure comprising the steps of implanting ions of an element which is substantially insoluble in iron into the substrate by ion bombardment and then heat treating the substrate to produce the hardened martensiticstructure. Preferably the interstitial alloying atoms are selected from beryllium,boron, carbon or nitrogen and the alloying may be effected after the ion bombardment.
The invention includes a preferred method wherein the ion implanting step includes placing said substrate in a vacuum, admitting an inert gas into said vacuum, producing an electrical plasma discharge through said inert gas with said substrate as the cathode and maintaining the potential with vacuum in the range which will support the plasma.
The invention also includes according to a second aspect a superhard martensite prepared by the method according to the first aspect of the invention wherein the implanted element is helium, neon, argon, krypton, xenon, radon, lithium, sodium, potassium, rubidium, cesium, francium, calcium,strontium, barium, radium, silver, cadmium, mercury, thallium, lead, bismuth, beryllium, yttrium, lanthanum, zirconium, hafnium, thorium, tantalum, copper, indium, selenium, tellurium or polonium.
The superhard martensite may comprise a steel substrate in which the surface thereof contains an element insoluble in iron embedded in the iron, the surface exhibiting a grain size smaller than 0.001 mm as the longest dimension after normal quenching.
It has been found that the present method works best on normalized or spheroidized (annealed) steel, i.e. steel of low hardness.
A substrate for. use in the present invention should be a steel with sufficient interstitial alloying atoms therein to be hardenable, i.e. an alloy content ranging from 0.3$ to 1.8% by weight with the optimum range being from 0.5$ to 1.0$ by weight. Such interstitial alloying atoms are from the second period of the periodic table and comprise beryllium, boron, carbon and nitrogen. Substitutional alloying elements found within the steel substrate are generally of no significance in the present invention.
It has been found that an element which is insoluble in iron, when implanted into a steel substrate, will retard the growth of or/and nucleate the grain during martensite formation, thereby producing a more uniform and finer grained martensite structure, resulting in a harder substrate.
To treat, according to a preferred method of carrying out the present invention, a hardenable steel substrate or object (0.6% carbon, for example) the steel should first be cleaned on its surface. This is accomplished by any conventional cleaning method. The substrate is then placed inside a vacuum chamber on a suitably supported and insulated metallic plate to the cathode, to which one terminal of a high potential d.c. current source is connected. Larger objects may be placed on insulators and directly connected to the negative side of the
d.c. source.
The other terminal of the d.c. source is connected to a suitable anode which may be the conducting metallic base of the chamber. More often the substrate is placed at the bottom of the chamber and the anode above it to make it easier to load and unload the chamber.
The chamber is next evacuated to a pressure of about 1 x 10 mm Hg. It is cyclically flushed with Argon or whatever inert gas is to be used or to be implanted fh the substrate and evacuated, two or three times.
Argon or other gas is then slowly let into the chamber with simultaneous application of potential between the substrate or object and the anode. A pink plasma starts forming around 500-800 volts at a -5 vacuum of about 2.0 x 10 mm Hg. The potential is then increased to any desired value, such as 4,5. KV. The object is thus bombarded for a specific time (2 to 4 minutes) with this Argon or inert gas plasma.
It is then cooled inside the chamber to prevent any oxidation.
When a solid is further ion plated for the formation of a wear resistant corrosion resistant or other purpose coat, the other terminal is connected to a tungsten wire anode which is then resistance heated to melt the coating material. An electron gun evaporator or other vapour source may be used as the anode.
The object or substrate is subsequently heated up into the austenite temperature range and quenched to martensite in water, oil or air depending on the alloy content. The treated surface layer may also be heated into the austenite range by ion bombardment and quenched by the backing substrate material as a heat sink or by cooled contact holders. Helium, argon or other gases may also be let into the vacuum for quenching.
The voltage applied to the system can vary for example from 200 volts to 20,000 volts. Ion accelerators can also be employed which utilize up to 2,000,000 volts.
It has been found that a voltage of 4 KV applied for a few minutes will cause ion penetration of argon into the substrate of approximately microns. The implanting concentration fades out after 20 microns when 4 KV is applied.
The speed of the impinging ions will determine the depth of penetration. The higher the applied potential jjpd the lower the gas pressure, thfe faster will the ions move when impinging on the substrate. The distribution of insoluble implanted atoms is controlled by the hardness of the substrate and the history of potential and pressure applied during the implantation time.
In some instances the plasma can be better maintained and working i conditions extended to pressures and/or potentials which could not otherwise be used, if a magnetic field, high frequency or radio frequency or radiation is applied to the plasma causing a further ionization of the gas beyond that caused by the static dc bias. Such methods are used often to increase ionization in plasmas.
Basically, any element which is insoluble in iron can be utilized in the present invention including the inert gases: helium, neon, argon, krypton, xenon, radon; the alkaline metals: lithium, sodium, potassium, rubidium, cesium, francium; the alkaline earths: calcium, strontium, barium, radium; plus the insoluble metals: silver, cadmium, mercury, . thallium, lead and bismuth. The following elements can also be effectively ion implanted into steel substrate as they have either a marked low or limited solubility limit in iron: beryllium (0.1% by weight), magnesium (0.1% in weight), yttrium (low), lanthanum (0.1% by weight), zirconium (low), hafnium (low), thorium (low), tantalum (low), copper (low), indium (low), selenium (low), tellurium (low) and polonium (low).
Although all of the above identified elements can be employed in this implantation procedure, the preferred elements are those with an atomic size which is comparable to that of iron. This is best illustrated by exaniin- 6 42143 ing the effectiveness of the inert gases in this process. In going down the list of these gases on the periodic table, it is found that helium is next to the lowest in effectiveness, neon is more effective, argon is the most effective, krypton is comparable to neon and xenon is the least effective. Argon is the most effective because its atomic size is about the same as iron; xenon and neon have atomic sizes which are too large and too small respectively, as compared to iron.
The present method could also be performed by simultaneously or successively bombarding the substrate with one of the selected implantation elements and one of the selected interstitial alloy elements and then hardening. This procedure would produce the same result, namely, a superhard martensite. The present invention could also be performed by bombarding a mild steel with insoluble ions and carbonizing the steel by one of the conventional methods either before or after the ion bombard15 ment, to obtain a core hardened product with superhard surface.
The following table I is illustrative of the process of the present invention. The steel substrates were ion implanted with various elements at various potentials for a selected time period and then hardened. The resultant product was measured for hardness. The Knoop hardness indenta20 tions were made with a 100 gram load and measured at twenty (20),times magnification.
- 7 42143
TABLE I
El ement
Untreated Substrate
Argon
Argon
Argon
Xenon Xenon Helium Helium
Silver
Voltage (kv) Time (minutes) Hardness (Knoop) 4.5 3 830 1080 4.5 7 1000-1030 2.5 5 1050-1110 4.5 5 910 4.5 10 1000 2.5 5 1000 2.5 2 890-910 3.0 (plus 3 mins, of silver ion implan ting) 3 960
The following table illustrates the Knoop hardness obtained when elements (iron and titanium) which are soluble in iron are implanted into a steel substrate for a selected time period and then hardened:
TABLE II
Element Voltage (kv) Time (minutes) Hardness (Knoop) Iron 3.0 3 810 Titanium 3.0 3 840 Helium and Iron He 2.5 2 790-810 Fe 2.5 3 In the examples of Table I, the steel substrates, employed, contained carbon by weight, and the remainder iron. Each substrate was approxi
irately 2 inches by | inch by 1/32 inch.
A chamber, similar to that described in the aforesaid NASA technical note D-2707, was employed, being first evacuated several times with the gas to be employed and then evacuated to a vacuum at which the plasma
- 8 42143 could be sustained, namely in the neighbourhood of 5 X 10 (2 - 50 X ) millimeters of mercury.
In the hardening step, each substrate, after being implanted with ions by bombardment in the chamber, was heated to from 850°C to about
1050°C, preferably to about 1000°C so as to be in the gamma austenite range and then quenched in water, at about room temperature to produce martensite.
Thereafter, each sample substrate was etched on a surface using a 2 solution of Nital (nitric acid and ethanol). Intead of the usual accicular structure of martensite, which in the untreated sample had crystals the major length of which was about 40 mm at 6700 times magnification, the treated substrates exhibit a very fine grained martensite with grains no longer than 6 mm. Since the volume and weight of the grains are proportional to the third power of this length or diameter the treated structure has
4q3 =» 305 times as many grains and 50 times as much grain boundary area.
Claims (15)
1. A method of treating a steel substrate containing from 0.3 to 1.8$ by weight of interstitial alloying atoms in order to form a superhardened martensite-structure comprising the steps of implanting ions of an element which is substantially insoluble in iron into the substrate by ion bombardment and then heat treating the substrate to produce the hardened martensiticstructure.
2. A method as claimed in Claim 1, wherein the substrate contains interstitial alloying atoms of beryllium, boron, carbon or nitrogen.
3. A method as claimed in Claim 1 wherein the substrate is alloyed with beryllium, boron, carbon or nitrogen after the ion bombardment.
4. A method as claimed in Claim 1 wherein the amount of interstitial alloy in the steel substrate ranges from 0.5$ to 1.0$ by weight.
5. A method as claimed in Claim 1 wherein the implanted element is helium, neon, argon, krypton, zenon, radon, lithium, sodium, potassium, rubidium, cesium,francium, calcium, strontium, barium, radium, silver, cadmium, mercury, thallium, lead, bismuth, beryllium, magnesium, yttrium, lanthanum, zirconium, hafnium, thorium, tantalum, copper, indium, selenium, tellurium or polonium.
6. A method as claimed in Claim 1 wherein the implanted element has an atomic size substantially like that of iron.
7. A method as claimed in Claim 6 wherein the element is argon or silver.
8. A substrate treated in accordance with any of Claims 1 to 7 to produce a superhard martensite.
9. A method as claimed in Claim 1 wherein the ion implanting step includes placing said substrate in a vacuum, admitting an inert gas into said vacuum, producing an electrical plasma discharge through said inert gas with said substrate as the cathode and maintaining the potential with vacuum in the range which will support the plasma. - 10 42143
10. A superhard martensite prepared by the method claimed in Claim 1 wherein the element is helium, neon, argon, krypton, xenon, radon, lithium, sodium, potassium, rubidium, cesium,francium, calcium, strontium, barium, radium, silver, cadmium, mercury, thallium, lead, bismuth, beryl5 lium, yttrium, lanthanum, zirconium, hafnium, thorium, tantalum, copper, indium, selenium, tellurim or polonium.
11. The superhard martensite according to Claim 10 wherein said surface has a Knoop hardness above 1000.
12. A superhard martensite according to Claim 11 comprising a steel 10 substrate in which the surface thereof contains an element insoluble in iron embedded in the iron, the surface exhibiting a grain size smaller than fl.001 mm as the longest dimension after normal quenching.
13. A method as claimed in Claim 1 where the plasma is further ionized by a magnetic field, high frequency or radio frequency, or by radiation beyond 15 the ionization caused by the static d.c. bias.
14. A method of superhardening a substrate containing iron substantially as hereinbefore described.
15. A steel substrate comprising a superhard martensite substantially as hereinbefore described.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US424672A US3925116A (en) | 1972-08-09 | 1973-12-14 | Superhard martensite and method of making the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE42143L IE42143L (en) | 1975-06-14 |
| IE42143B1 true IE42143B1 (en) | 1980-06-18 |
Family
ID=23683453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE2443/74A IE42143B1 (en) | 1973-12-14 | 1974-11-27 | Superhard martensite and method of making the same |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS572786B2 (en) |
| AT (1) | AT350094B (en) |
| CA (1) | CA1028935A (en) |
| CH (1) | CH603812A5 (en) |
| DE (1) | DE2456530A1 (en) |
| DK (1) | DK649374A (en) |
| FR (1) | FR2254655B2 (en) |
| GB (1) | GB1483891A (en) |
| IE (1) | IE42143B1 (en) |
| IL (1) | IL46093A (en) |
| IT (1) | IT1023485B (en) |
| SE (1) | SE412258B (en) |
| ZA (1) | ZA747740B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2075069B (en) * | 1979-12-03 | 1984-09-12 | Atomic Energy Authority Uk | Wear resistance of metals |
| US4915746A (en) * | 1988-08-15 | 1990-04-10 | Welsch Gerhard E | Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures |
| DE10222453A1 (en) * | 2002-05-22 | 2003-12-04 | Voith Paper Patent Gmbh | Process for the surface treatment of a doctor element |
| DE102011079955B4 (en) | 2011-07-28 | 2023-10-19 | Aktiebolaget Skf | Steel, component and process for producing steel |
| RU2501886C1 (en) * | 2012-09-19 | 2013-12-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный индустриальный университет" | Ion implantation unit cathode |
-
1974
- 1974-11-14 CA CA213,727A patent/CA1028935A/en not_active Expired
- 1974-11-15 GB GB49506/74A patent/GB1483891A/en not_active Expired
- 1974-11-21 IL IL46093A patent/IL46093A/en unknown
- 1974-11-27 IE IE2443/74A patent/IE42143B1/en unknown
- 1974-11-29 DE DE19742456530 patent/DE2456530A1/en active Pending
- 1974-12-03 IT IT54341/74A patent/IT1023485B/en active
- 1974-12-04 ZA ZA00747740A patent/ZA747740B/en unknown
- 1974-12-04 SE SE7415174A patent/SE412258B/en unknown
- 1974-12-12 JP JP14207274A patent/JPS572786B2/ja not_active Expired
- 1974-12-12 AT AT992974A patent/AT350094B/en not_active IP Right Cessation
- 1974-12-13 DK DK649374A patent/DK649374A/da unknown
- 1974-12-13 FR FR7441138A patent/FR2254655B2/fr not_active Expired
- 1974-12-13 CH CH1663974A patent/CH603812A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5092814A (en) | 1975-07-24 |
| IL46093A (en) | 1979-01-31 |
| DK649374A (en) | 1975-08-18 |
| JPS572786B2 (en) | 1982-01-18 |
| CA1028935A (en) | 1978-04-04 |
| AT350094B (en) | 1979-05-10 |
| ATA992974A (en) | 1978-10-15 |
| FR2254655A2 (en) | 1975-07-11 |
| FR2254655B2 (en) | 1978-05-05 |
| IL46093A0 (en) | 1975-02-10 |
| SE7415174L (en) | 1975-06-16 |
| DE2456530A1 (en) | 1975-06-19 |
| CH603812A5 (en) | 1978-08-31 |
| IT1023485B (en) | 1978-05-10 |
| SE412258B (en) | 1980-02-25 |
| GB1483891A (en) | 1977-08-24 |
| ZA747740B (en) | 1976-07-28 |
| IE42143L (en) | 1975-06-14 |
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