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IE34899B1 - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
IE34899B1
IE34899B1 IE63/71A IE6371A IE34899B1 IE 34899 B1 IE34899 B1 IE 34899B1 IE 63/71 A IE63/71 A IE 63/71A IE 6371 A IE6371 A IE 6371A IE 34899 B1 IE34899 B1 IE 34899B1
Authority
IE
Ireland
Prior art keywords
carriers
medium
image
electrodes
site
Prior art date
Application number
IE63/71A
Other versions
IE34899L (en
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IE34899L publication Critical patent/IE34899L/en
Publication of IE34899B1 publication Critical patent/IE34899B1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/476Three-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Facsimile Heads (AREA)
  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)

Abstract

1340617 Electroluminescence WESTERN ELECTRIC CO Inc 19 April 1971 [16 Feb 1970] 21830/71 Heading C4S [Also in Division H1] A semi-conductor device comprises a semiconductive, electroluminescent, charge carrier storage medium, a means for storing the carriers at a first site in the medium, and a means for transferring the carriers to a second site, a radiative output being obtainable on the recombination of the carriers with the bulk carriers of the medium. Electrode and insulator materials and thicknesses are given. The principle of operation is shown in the shift register of Fig. 2 wherein a series of electrodes 22a, 23a &c. overlie the medium 20 on an insulating layer 21. Carriers at the input 25 migrate to the depletion region 27a under electrode 22a, formed by suitable biasing, and is thereafter sequentially transferred to depletion regions sequentially formed under the next electrode by suitably timed voltage pulses on 22<SP>1</SP>, 23<SP>1</SP> and 24<SP>1</SP>. The carriers may alternatively be generated not only at the input, but along the entire device, by light or other ionizing radiation incident upon the medium, movement of the charges towards the output (by means of suitable voltage pulses to the electrodes), resulting in a video signal corresponding to the image on the medium. Alternatively a video signal may produce an image if the video signal is fed into the device, and when all the sites have been charged, or not, by the signal, a bias on the electrodes may cause the carriers to recombine forming an image in the electroluminescent medium. Fig. 10 is such a device, in which in a medium of N type GaAs P type regions 117a, 118a &c. are formed. The electrodes 115a, 116a &c. form the gate electrodes, effectively, of a series of IGFETS, the drain of one FET forming the source of the next. By applying alternating clock pulses to the electrodes, charge carriers can be caused to travel from site to site sequentially, the channels being opened and closed sequentially. When the final site is reached, all the carriers may be forced to recombine simultaneously with the bulk carriers of the medium producing an image in the medium. This image may be applied to a photo-cathode of a CRT to form an image on the screen. Figs. 5A-5C (not shown) illustrate various output devices. Specifications 1,340618 and 1,340,619 are referred to. [GB1340617A]
IE63/71A 1970-02-16 1971-01-19 Improvements in or relating to semiconductor devices IE34899B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1144670A 1970-02-16 1970-02-16

Publications (2)

Publication Number Publication Date
IE34899L IE34899L (en) 1971-08-16
IE34899B1 true IE34899B1 (en) 1975-09-17

Family

ID=21750410

Family Applications (1)

Application Number Title Priority Date Filing Date
IE63/71A IE34899B1 (en) 1970-02-16 1971-01-19 Improvements in or relating to semiconductor devices

Country Status (9)

Country Link
BE (1) BE762943A (en)
CH (1) CH534941A (en)
DE (1) DE2107110B2 (en)
ES (1) ES388721A1 (en)
FR (1) FR2091962B1 (en)
GB (1) GB1340617A (en)
IE (1) IE34899B1 (en)
NL (1) NL7101991A (en)
SE (1) SE373966B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (en) * 1971-12-29 1978-06-13
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
FR2259438B1 (en) * 1974-01-24 1976-10-08 Commissariat Energie Atomique
DE2733707C2 (en) * 1977-07-26 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Semiconductor component, suitable for optoelectronic image recording and / or image reproduction devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
US3473032A (en) * 1968-02-08 1969-10-14 Inventors & Investors Inc Photoelectric surface induced p-n junction device
NL155155B (en) * 1968-04-23 1977-11-15 Philips Nv DEVICE FOR CONVERSION OF A PHYSICAL PATTERN INTO AN ELECTRICAL SIGNAL AS A FUNCTION OF TIME, THE TELEVISION CAMERA CONTAINED, AS WELL AS SEMI-CONDUCTOR DEVICE FOR USE THEREIN.
US3623026A (en) * 1969-01-21 1971-11-23 Gen Electric Mis device and method for storing information and providing an optical readout

Also Published As

Publication number Publication date
BE762943A (en) 1971-07-16
IE34899L (en) 1971-08-16
DE2107110B2 (en) 1975-02-06
SE373966B (en) 1975-02-17
DE2107110A1 (en) 1971-09-23
CH534941A (en) 1973-03-15
ES388721A1 (en) 1974-05-01
FR2091962A1 (en) 1972-01-21
GB1340617A (en) 1973-12-12
FR2091962B1 (en) 1974-04-26
NL7101991A (en) 1971-08-18

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