HK40070310B - Lid component for packages and package manufacturing method - Google Patents

Description

Method for manufacturing the cover component and package body for packaging

This application is a divisional application of the invention patent application filed on October 9, 2019, with application number 201980059130.3 and entitled "Cover component and encapsulation body for encapsulation".

Technical Field

The present invention relates to a cover component and a package body for bonding to a packaging substrate.

This application claims priority based on Japanese Patent Application No. 2018-194535, filed on October 15, 2018, and Japanese Patent Application No. 2019-184287, filed on October 7, 2019, the contents of which are incorporated herein by reference.

Background Technology

Previously, semiconductor devices and light-emitting devices were known to be sealed within a package to protect light-emitting elements such as semiconductor lasers (LDs) or LEDs from the external environment (see, for example, Patent Documents 1 and 2).

Patent Document 1 describes a semiconductor device comprising: a packaging substrate having a recess with an upper opening; a semiconductor element housed in the recess; a window member (a cover member for packaging) configured to cover the opening of the recess; and a sealing structure sealing the space between the packaging substrate and the window member. The sealing structure comprises: a first metal layer disposed in a frame shape on the upper surface of the packaging substrate; a second metal layer disposed in a frame shape on the inner surface of the window member; and a metal bonding layer disposed between the first metal layer and the second metal layer. The sealing structure is configured such that one of the first metal layer and the second metal layer is integrally located within the region where the other of the first metal layer and the second metal layer are disposed.

Patent Document 2 describes a light-emitting device comprising: a mounting substrate; an ultraviolet light-emitting element mounted on the mounting substrate; and a cover (encapsulation cover component) having a recess formed on the mounting substrate, wherein the ultraviolet light-emitting element is housed within the recess. The mounting substrate comprises a support body, a first conductor portion supported by the support body, a second conductor portion, and a first bonding metal layer. The cover comprises: a cover body having a recess formed on its back side; and a second bonding metal layer disposed opposite to the first bonding metal layer at the periphery of the recess. The uppermost layer of each of the first conductor portion, second conductor portion, and first bonding metal layer, which is furthest from the support body, is formed of Au, and these first and second bonding metal layers are bonded by Au-Sn.

The metal bonding portion described in Patent Document 1 is made of an Au-Sn alloy. In Patent Document 2, the first bonding metal layer and the second bonding metal layer are also bonded by an Au-Sn alloy. That is, in either Patent Document 1 or 2, an Au-Sn layer made of an Au-Sn alloy is formed in the encapsulation cover component. The Au-Sn layer is formed, for example, by applying Au-Sn paste to the above-mentioned area and performing reflow soldering.

If Au-Sn paste is applied to a glass substrate and reflow soldered, the Au-Sn layer may sometimes peel off from the glass substrate or a portion of the glass substrate may be detached, potentially damaging the encapsulation cover component.

Patent Document 1: Japanese Patent No. 6294417

Patent Document 2: Japanese Patent No. 6260919

Summary of the Invention

The present invention was made in view of this situation, and its object is to provide a packaging cover component and a package body capable of suppressing the peeling of the Au-Sn layer and the breakage of the packaging cover component.

One aspect of the present invention relates to a packaging cover component that is bonded to a packaging substrate, comprising: a glass component having a bonding portion configured as a planar frame and a light-transmitting portion disposed inside the bonding portion; one or more metallization layers formed in a frame shape on the bonding portion of the glass component; and one or more Au-Sn layers disposed on the metallization layers and having a frame shape with a width of 250 μm or less.

The coefficient of linear expansion of the Au-Sn layer differs from that of the glass component. When the Au-Sn layer is formed by reflow soldering, the shrinkage rate of the Au-Sn layer during cooling is greater than that of the glass component. Consequently, the stress caused by the shrinkage of the Au-Sn layer during cooling acts on the glass component, leading to the Au-Sn layer peeling off from the glass component, or a portion of the glass component being detached.

In contrast, the width of the Au-Sn layer is less than 250 μm. Therefore, the stress caused by the shrinkage of the Au-Sn layer relative to the glass component is relatively small, which can suppress the peeling and breakage of the glass component caused by the shrinkage of the Au-Sn layer.

As a preferred embodiment of the cover component for packaging according to the present invention, it can be as follows: the frame shape of one or more Au-Sn layers has one or more corners, and the maximum width of the corners is less than the width of the frame shape of the Au-Sn layer excluding the corners.

The maximum width of the corner represents the maximum dimension in the direction intersecting the circumferential shape of the frame. In the above manner, the maximum width of the corner is smaller than the width of the parts other than the corner, thus reliably reducing the stress in the glass components at the corner.

As a preferred embodiment of the cover component for packaging according to the present invention, the corners are chamfered.

For example, when the frame shape of the Au-Sn layer is rectangular, the two straight sections intersect at 90° at the corners, and the maximum width of the four corners is greater than the width of the parts other than the corners. This makes it easy for stress caused by the shrinkage of the Au-Sn layer during cooling to concentrate. In contrast, by chamfering the corners so that the maximum width of the corners is smaller than the width of the parts other than the corners, the stress relative to the glass component can be further reduced.

As a preferred embodiment of the encapsulation cover component of the present invention, it can be as follows: one or more Au-Sn layers have a first Au-Sn layer and a second Au-Sn layer, wherein the second Au-Sn layer is disposed with a gap separating it from the inner side of the first Au-Sn layer.

In the above-described manner, the Au-Sn layer comprises a first Au-Sn layer and a second Au-Sn layer, thereby improving the bonding strength when the cover component of the encapsulation is bonded to the encapsulation substrate. Furthermore, the second Au-Sn layer is disposed with a gap separating it from the inner side of the first Au-Sn layer. Since the widths of both the first and second Au-Sn layers are 250 μm or less, the stress in the glass component caused by the shrinkage of the Au-Sn layer is relatively small, thus suppressing the peeling of the Au-Sn layer from the glass component or damage to the cover component of the encapsulation.

As a preferred embodiment of the cover component for packaging according to the present invention, the thickness of the glass component may be 50 μm or more and 3000 μm or less.

The width of the Au-Sn layer can be 50 μm or more.

The width of the Au-Sn layer can be less than 230 μm.

The maximum width of the corner can be greater than 30 μm and less than 130 μm.

The glass component can be flat.

The glass component can be box-shaped.

The package according to one aspect of the present invention includes at least one packaging substrate and the packaging cover member according to one aspect of the present invention, wherein the packaging cover member and the packaging substrate are joined by a bonding layer, which is formed by melting and solidifying the Au-Sn layer.

In one aspect of the present invention, the encapsulation substrate and the encapsulation cover component are reliably joined, and the peeling and breakage of the encapsulation substrate caused by the stress caused by the shrinkage of the Au-Sn layer can be suppressed.

In one aspect of the present invention, peeling of the Au-Sn layer formed on the glass component and breakage of the encapsulation cover component can be suppressed.

Attached Figure Description

Figure 1 is a perspective view showing the encapsulation cover component and the encapsulation substrate constituting the encapsulation body according to the first embodiment.

Figure 2 is a top view showing the surface of the cover component for packaging that is joined to the packaging substrate in the first embodiment.

Figure 3 is a cross-sectional view of the cover component for packaging along line A1-A1 shown in Figure 2.

Figure 4 is a top view showing the surface of the cover component for packaging that is joined to the packaging substrate in the second embodiment.

Figure 5 is a top view showing the surface of the cover component for packaging that is joined to the packaging substrate in the third embodiment.

Figure 6 is a top view showing the surface of the cover component for packaging that is joined to the packaging substrate in the fourth embodiment.

Figure 7 is a top view showing the surface of the cover component for packaging that is joined to the packaging substrate in the fifth embodiment.

Figure 8 is a top view showing the surface of the cover component for packaging that is joined to the packaging substrate in the sixth embodiment.

Figure 9 is a cross-sectional view of the package according to the first embodiment.

Figure 10 is a cross-sectional view showing the package according to the seventh embodiment.

Figure 11 is a top view showing the surface of the cover member for packaging that is joined to the packaging substrate in the eighth embodiment.

Detailed Implementation

Hereinafter, various embodiments of the encapsulation cover member and encapsulation body according to the present invention will be described with reference to the accompanying drawings. FIG1 is a perspective view showing the encapsulation substrate 2 and the encapsulation cover member 3 of this embodiment. FIG2 is a top view of the encapsulation cover member 3. FIG3 is a cross-sectional view of the encapsulation cover member 3 along line A1-A1 in FIG2. FIG9 is a cross-sectional view of the encapsulation body 1 formed by joining the encapsulation substrate 2 and the encapsulation cover member 3.

[Simple Overview of the Package Structure]

As shown in Figures 1 and 9, the package 1 includes: a package substrate 2 with a recess 21 having an upper opening; and a flat package cover member 3, which is joined to the package substrate 2 to block the recess 21. The package 1 contains light-emitting elements such as LD (Laser Diode) or LED (Light Emitting Diode) (not shown).

[Structure of the packaging substrate]

As shown in Figures 1 and 9, the encapsulation substrate 2 has a recess 21 with an upper opening and a mating surface 22 disposed around the recess 21. For example, the encapsulation substrate 2 is formed into a rectangular box shape from AlN (aluminum nitride) or the like. The recess 21 is blocked by the encapsulation cover member 3, which is joined to the mating surface 22, forming a space for accommodating light-emitting elements, etc.

[Structure of the cover component for packaging]

As shown in Figures 1 to 3, the encapsulation cover component 3 has: a rectangular plate-shaped glass component 30, having a joint portion 33 configured as a planar frame and a light-transmitting portion 34 disposed inside the joint portion 33; a metallization layer 4 formed in a frame shape on the joint portion 33; and a frame-shaped Au-Sn layer 5 formed on the metallization layer 4.

The joint 33 is also referred to as the frame line surrounding the light-transmitting portion 34, which includes the glass component 30 at approximately the center. The joint 33 defines the outline and area of the light-transmitting portion 34. The metallization layer 4 and the Au-Sn layer 5 are also referred to as the frame line surrounding the light-transmitting portion 34. The joint 33, the metallization layer 4, and the Au-Sn layer 5 are also referred to as having a frame shape.

The glass component 30 has an upper surface 31 that forms the top surface of the package 1 and a lower surface 32 that includes a joint portion 33 that is bonded to the joint surface 22 of the package substrate 2. For example, the glass component 30 is formed into a rectangular plate shape with a side length of 2 mm to 30 mm and a thickness of 50 μm to 3000 μm using borosilicate glass, quartz glass, etc.

As shown in Figures 1 to 3, a rectangular frame-shaped metallization layer 4 composed of Au, Ti, Ni, etc., is formed at the joint 33 on the lower surface 32. An Au-Sn layer 5 with the same rectangular frame shape as the metallization layer 4 is formed on the metallization layer 4.

The metallization layer 4 is larger than the recess 21 of the packaging substrate 2, and is formed to surround the recess 21 and abut against the bonding surface 22. The width of the Au-Sn layer 5 is the same as or narrower than the width of the metallization layer 4, and is set to 250 μm or less.

That is, the area surrounded by the frame (frame line) of the metallization layer 4 is larger than the opening area at the top of the recess 21 of the packaging substrate 2. The linewidth of the frame (frame line) of the Au-Sn layer 5 is the same as or narrower than the linewidth of the frame (frame line) of the metallization layer 4. In this embodiment, the linewidth of the Au-Sn layer 5 is set to 250 μm or less.

Specifically, as shown in Figure 2, in the Au-Sn layer 5, the two sides of the rectangle intersect at 90° at the corners 51. The maximum width (maximum line width) L2 (the distance between the intersection of the two outer sides and the two inner sides of the outline of the Au-Sn layer 5, i.e., the maximum dimension in the direction of circumferential intersection along the frame shape) of the four corners 51 is greater than the width (line width) L1 of the parts other than the four corners 51.

However, both the width L1 and the maximum width L2 are less than 250 μm. When the width L1 and the maximum width L2 exceed 250 μm, the stress caused by the difference in the coefficients of linear expansion between the Au-Sn layer 5 and the glass component increases during cooling after reflow soldering when the Au-Sn layer 5 is melted, leading to the Au-Sn layer 5 peeling off from the glass component or the glass component breaking.

Furthermore, the width L1 and the maximum width L2 are preferably 50 μm or more. At this time, in the package 1 formed by joining the encapsulation cover member 3 and the encapsulation substrate 2, the joining of the encapsulation cover member 3 and the encapsulation substrate 2 becomes firm, so the encapsulation cover member 3 will not fall off the encapsulation substrate 2.

More preferably, the width L1 of the Au-Sn layer 5, excluding the corners 51 (straight sections), can be set to 50 μm or more and 230 μm or less, and the maximum width L2 of the four corners 51 can be set to 70 μm or more and 250 μm or less.

The height (thickness) of the Au-Sn layer 5 can be set to, for example, above 1 μm and below 100 μm.

The light-emitting element is housed in the recess 21 of the encapsulation substrate 2 described above. Next, the Au-Sn layer 5 of the lower surface 32 of the encapsulation cover member 3 is brought into contact with the bonding surface 22 of the encapsulation substrate 2. With the Au-Sn layer 5 in contact with the bonding surface 22, the encapsulation substrate 2 and the encapsulation cover member 3 are reflow soldered (heated). As a result, Au-Sn solder (bonding layer 6) formed by melting the Au-Sn layer 5 is formed. The encapsulation substrate 2 and the encapsulation cover member 3 are bonded together by the Au-Sn solder (bonding layer 6), and the encapsulation body 1 is formed as shown in FIG9.

[Manufacturing method for the cover component for packaging]

For example, the encapsulation cover component 3 is manufactured as follows. Multiple metallization layers 4 composed of Au, Ti, Ni, etc., are formed on the surface of a glass component 30 (in this embodiment, a 20mm x 20mm sheet) by sputtering or plating (e.g., forming 25 square frames with dimensions of 3mm x 3mm). Next, Au-Sn paste is applied to each metallization layer 4 in such a way that rectangular frames (e.g., forming 25 square frames with dimensions of 3mm x 3mm) are formed on each metallization layer 4.

That is, multiple metallization layers 4 with rectangular (square) frame shapes are formed on the surface of the glass component 30. Next, an Au-Sn layer with a rectangular (square) frame shape is formed on each metallization layer 4. The Au-Sn layer is formed by coating Au-Sn paste.

The metallization layer 4 is preferably formed by Au plating. The metallization layer 4 is formed in the same rectangular frame shape as the Au-Sn layer 5.

The Au-Sn slurry forming the Au-Sn layer 5 is, for example, a slurry in which Au-Sn alloy powder and flux are mixed in a manner where the Au-Sn slurry is set to 100% by mass. The Au-Sn alloy powder contains, for example, Sn in an amount of 21% by mass to 23% by mass, with the remainder being Au and unavoidable impurities. There are no particular limitations on the flux used; conventional solder fluxes can be used. For example, RA type, RMA type, halogen-free type fluxes, MSN type, AS1 type, AS2 type, etc., can be used.

Au-Sn paste is printed onto the metallization layer 4 to form a coating with a width of 50 μm or more and 250 μm or less, and a thickness of 1 μm or more and 100 μm or less. Alternatively, the Au-Sn paste can also be applied by spraying from a dispensing machine or similar means.

Next, the glass component 30 coated with Au-Sn paste is heated (reflow soldering). In this reflow soldering process, the Au-Sn paste coating is heated in a non-oxidizing atmosphere, such as _N₂ . The heating temperature is preferably set within the range of 280°C to 350°C, more preferably within the range of 280°C to 330°C, and even more preferably within the range of 280°C to 300°C. The heating time is preferably maintained at the heating temperature for 10 to 120 seconds. The heating time is preferably set within the range of 20 to 90 seconds, and even more preferably within the range of 30 to 60 seconds. As an example of suitable conditions, heating at 300°C for 1 minute is preferred.

Thus, the Au-Sn slurry melts. The molten Au-Sn remains on the metallization layer 4 and is cooled in this state, thereby forming an Au-Sn layer 5 with the same width as the metallization layer 4. Furthermore, the formed Au-Sn layer 5 includes the metallization layer 4, and therefore its composition differs slightly from the Au-Sn slurry, consisting of an Au-Sn alloy having Sn: 19wt%–23wt%, the remainder being Au, and unavoidable impurities.

Here, the coefficient of linear expansion of the Au-Sn layer 5 formed by reflow soldering is different from that of the glass component 30. That is, the shrinkage rate of the Au-Sn layer 5 due to cooling is greater than that of the glass component. Therefore, if the stress acting on the glass component 30 due to the shrinkage of the Au-Sn layer 5 during cooling is large, it may cause the Au-Sn layer 5 to peel off from the glass component 30 or a part of the glass component 30 to be detached.

In contrast, in this embodiment, the width of the Au-Sn layer 5 is less than 250 μm, thus the stress acting on the glass component 30 due to the contraction of the Au-Sn layer 5 during cooling is relatively small. This suppresses the peeling of the Au-Sn layer 5 from the glass component 30 or the breakage of the glass component 30.

By dividing the glass component 30, which has multiple rectangular Au-Sn layers 5, into sections for each Au-Sn layer 5, a cover component 3 for encapsulation as shown in Figures 2 and 3 is formed. The cover component 3 for encapsulation thus manufactured is bonded to the encapsulation substrate 2 as described above, thereby forming the encapsulation body 1.

By utilizing this encapsulation cover component 3, the recess 21 of the encapsulation substrate 2 can be reliably sealed, and the peeling and breakage of the encapsulation substrate 2 caused by the stress caused by the shrinkage of the Au-Sn layer 5 can also be suppressed.

Figure 9 shows the package 1. The Au-Sn layer 5 is melted and then solidified to form the bonding layer 6. In the package 1, the package substrate 2 and the package cover component 3 are bonded together without gaps through the bonding layer 6.

Furthermore, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the elements of the present invention. Hereinafter, the second to eighth embodiments will be described, but features identical to those in the first embodiment will be omitted from the description. Furthermore, the width of the metallization layer and the Au-Sn layer is the line width of its frame (frame line) or frame shape.

Figure 4 is a top view showing the encapsulation cover member 103 according to the second embodiment. In the second embodiment, an Au-Sn layer 5A is provided instead of the Au-Sn layer 5. In the Au-Sn layer 5A, the rectangular frame-shaped corners 51A are chamfered. Therefore, the maximum width L3 of the four corners 51A (the maximum dimension in the circumferential direction of the corners constituting the frame of the Au-Sn layer 5A) is smaller than the width L1 of the parts other than the four corners 51A. That is, the width of any part of the Au-Sn layer 5A is 250 μm or less.

For example, in the Au-Sn layer 5A, the width L1 of the portion other than the corner 51A (the straight portion) is set to be 50 μm or more and 250 μm or less, and the maximum width L3 of the four corner 51A is set to be 30 μm or more and 130 μm or less. This shape of Au-Sn layer 5A can also be formed by the following method.

Alternatively, a metallization layer 4 with chamfered corners, identical in shape to the Au-Sn layer 5A, can be formed. Au-Sn paste is then applied to this metallization layer with chamfered corners and reflow soldered to form the Au-Sn layer 5A. Furthermore, an Au-Sn layer can also be formed on a metallization layer 4 that is formed in a rectangular frame shape without chamfers, and then the corners 51A of the Au-Sn layer are chamfered to form the Au-Sn layer 5A.

Due to the shrinkage of the Au-Sn layer 5A during cooling, stress tends to concentrate at the corners 51A of the Au-Sn layer 5A. In the second embodiment, the corners 51A of the Au-Sn layer 5A, where stress tends to concentrate due to the shrinkage during cooling, are chamfered, thereby further reducing the stress relative to the encapsulation cover member 103. Furthermore, the maximum width L3 of the corners 51A in the Au-Sn layer 5A is smaller than the width L1 of the Au-Sn layer 5A excluding the corners 51A, thus reliably reducing the stress relative to the encapsulation cover member 3 in the corners 51A.

Figure 5 is a top view showing the encapsulation cover member 203 according to the third embodiment. In the third embodiment, an Au-Sn layer 5B is provided instead of the Au-Sn layer 5. In the Au-Sn layer 5B, the four rectangular corner portions 51B are rounded on the inside. Therefore, the maximum width L4 of the four corner portions 51B is smaller than the width L1 of the portions other than the four corner portions 51B. That is, the width of any portion of the Au-Sn layer 5B is 250 μm or less.

For example, the width L1 of the Au-Sn layer 5B, excluding the corners 51B (straight sections), is set to be 50 μm or more and 230 μm or less, and the maximum width L4 of the four corners 51B is set to be 30 μm or more and 130 μm or less.

This type of Au-Sn layer 5B can also be formed by the following methods. A metallization layer 4 with a notch, having the same shape as the Au-Sn layer 5B, can be formed. Au-Sn paste is then applied to this metallization layer with the same notch shape and reflow soldered to form the Au-Sn layer 5B. Alternatively, an Au-Sn layer can be formed on a metallization layer 4 that is formed in a rectangular frame shape without notches, and then the inner sides of the corners 51B of the Au-Sn layer are rounded to form the Au-Sn layer 5B.

Figure 6 is a top view showing the encapsulation cover member 303 according to the fourth embodiment. In the fourth embodiment, an Au-Sn layer 5C is provided instead of the Au-Sn layer 5. In the Au-Sn layer 5C, the maximum width L5 of the two sides intersecting at the corner 51C is set to approximately half the width L1 of the portion (straight section) of the Au-Sn layer 5C excluding the corner 51C. Therefore, on the two sides intersecting at the corner 51C, a region (part) with a width set to approximately half the width L1 of the straight section is provided. Considering the reduction in adhesion, the distance L6 of the region with a width set to approximately half the width L1 of the straight section on one of the two sides intersecting at the corner 51C is set to a range of 40 μm or more and 125 μm or less.

Therefore, the maximum width L5 of the four corner portions 51C of the Au-Sn layer 5C is smaller than the width L1 of the straight portion of the Au-Sn layer 5C. That is, the width of any part of the Au-Sn layer 5C is less than 250 μm.

For example, in the Au-Sn layer 5C, the width L1 of the straight section is set to be 50 μm or more and 250 μm or less, and the maximum width L5 of the four corner sections 51C is set to be 30 μm or more and 130 μm or less.

Figure 7 is a top view showing the encapsulation cover member 403 according to the fifth embodiment. In the fifth embodiment, instead of the Au-Sn layer 5, a frame-shaped first Au-Sn layer 5D and a frame-shaped second Au-Sn layer 5E formed by a gap separating the inner side of the first Au-Sn layer 5D are provided. The width L1 of the first Au-Sn layer 5D and the maximum width (maximum line width) L2 of the corner portion 51, and the width L7 of the second Au-Sn layer 5E and the maximum width (maximum line width) L8 of the corner portion 51E are set to 250 μm or less.

The first Au-Sn layer 5D is the same as the Au-Sn layer 5 in the first embodiment. In the second Au-Sn layer 5E, the width L7 of the straight portion is set to be 50 μm or more and 250 μm or less, and the maximum width L8 of the four corner portions 51E is set to be 70 μm or more and 250 μm or less. The distance L9 between the first Au-Sn layer 5D and the second Au-Sn layer 5E is set to be 10 μm or more and 500 μm or less.

By setting the distance L9 of the gap within the aforementioned range, when manufacturing the Au-Sn layers 5D and 5E respectively, it is possible to suppress situations where the Au-Sn layers 5D and 5E peel off from the encapsulation cover member 403 due to the shrinkage of the molten Au-Sn. In the fifth embodiment where the Au-Sn layers 5D and 5E are formed in a double configuration, compared to the encapsulation cover member of the first to fourth embodiments, the bonding range based on the Au-Sn layers can be expanded, thereby improving the bonding strength when the encapsulation cover member 403 seals the encapsulation substrate 2.

In the above embodiments, each Au-Sn layer is formed into a rectangular frame shape, but it is not limited to this. For example, the frame-shaped Au-Sn layer can be triangular or hexagonal, or it can be a circular shape without corners.

Figure 8 is a top view showing the encapsulation cover member 503 according to the sixth embodiment. In the sixth embodiment, the encapsulation cover member 503 has a circular glass member 3F instead of a rectangular glass member 30, and has a circular frame-shaped metallization layer (not shown) and a circular frame-shaped Au-Sn layer 5F instead of a rectangular frame-shaped metallization layer 4 and an Au-Sn layer 5F. The glass member 3F has a central light-transmitting portion 534 and a circular frame-shaped joint portion 533 surrounding the light-transmitting portion 534. On the lower surface 32F of the glass member 3F, the Au-Sn layer 5F is formed into a round shape without corners in the joint portion 533. The width L10 of the Au-Sn layer 5F is 250 μm or less. For example, the width L10 of the Au-Sn layer 5F is set to be 50 μm or more and 250 μm or less.

Figure 10 is a cross-sectional view showing the package 701 according to the seventh embodiment. In the package 701, a recess 731 is provided in the glass component 730 of the package cover member 703 instead of the package substrate 702. The package cover member 703 has a glass component 730, a frame-shaped metallization layer 704 formed on the glass component 730, and a frame-shaped Au-Sn layer formed on the metallization layer 704. The package cover member 703 is bonded to the flat package substrate 702 by a bonding layer 706, thereby forming the package 701. The bonding layer 706 is formed by melting and solidifying the Au-Sn layer.

Figure 11 is a top view showing the encapsulation cover member 803 according to the eighth embodiment. In the eighth embodiment, a metallization layer 4G with rounded corners is provided instead of the metallization layer 4, and an Au-Sn layer 5G with rounded corners 51G is provided instead of the Au-Sn layer 5. In the Au-Sn layer 5G, the entire Au-Sn layer, including the corners 51G, is formed with the same (constant) width L8.

Example

In the encapsulation cover components of Examples 1, 2, and Comparative Example 1, Au-Sn layers of different widths are formed on the plate-shaped glass component. These encapsulation cover components of Examples 1, 2, and Comparative Example 1 will be described. The widths of the Au-Sn layers in each example are shown in Table 1.

In Examples 1, 2, and Comparative Example 1, Au plating was performed on the surface of a 20mm × 20mm rectangular glass component to form a metallization layer for 25 samples. The metallization layer had a rectangular frame shape with the same dimensions as the Au-Sn layer described in Table 1, and a thickness of 0.1μm.

Au-Sn slurry was applied to each metallization layer in the same rectangular frame shape as the metallization layer. The Au-Sn slurry was obtained by mixing Au-Sn alloy powder and flux at a flux ratio of 10% by mass. The Au-Sn alloy powder (Au-22% by mass Sn alloy powder) contained 22% by mass Sn, with the remainder being Au and unavoidable impurities. The flux used was of type RA.

In detail, for Example 1 and the comparative example, in order to form an Au-Sn layer of package size 3030 (3.0 mm long × 3.0 mm wide) of each size shown in Table 1 in the shape of the eighth embodiment shown in FIG11, Au-Sn paste was screen printed on the glass component using a printing mesh mask with a thickness of 30 μm.

For Example 2, in order to form an Au-Sn layer with package size 3030 (3.0 mm long × 3.0 mm wide) as shown in Table 1 in the shape of the second embodiment shown in FIG4, Au-Sn paste is screen-printed onto the glass component using a printing mesh mask with a thickness of 30 μm.

Furthermore, the glass component coated with Au-Sn paste was reflow soldered to form 25 frame-shaped Au-Sn layers on the glass component. During this reflow soldering, the Au-Sn paste coating was heated to 300°C for 1 minute under a _N2 atmosphere. The width of each Au-Sn layer formed in this way, excluding the corners (straight sections) and the maximum width of the corners, are the values shown in Table 1. The thickness of the Au-Sn layer is 4.7 μm.

For Examples 1, 2 and Comparative Example 1, the Au-Sn layers of each of the 25 samples thus obtained were observed, and the peeling from the glass component was evaluated based on the internal and external penetration rate of the Au-Sn layers.

(Stripping evaluation: Internal and external continuity rate of the Au-Sn layer)

The Au-Sn layer formed on the metallization layer was observed from the top surface using an optical microscope (10x). Samples with continuous peeling from the outer side to the inner side of the Au-Sn layer were deemed unacceptable. Samples without peeling were deemed acceptable. Furthermore, the percentage of samples deemed acceptable was calculated out of the 25 Au-Sn layers formed on the glass component, and the value is shown in Table 1 under the item "Peeling Evaluation (%)".

[Table 1]

In Examples 1 and 2, where the width of the Au-Sn layer was 250 μm or less, the peeling evaluation was 92% or higher. In particular, in Example 2, where the corner width was 100 μm and equal to or smaller than the straight portion, the peeling evaluation was 96%, which was especially high. On the other hand, in Comparative Example 1, the width of the Au-Sn layer was larger at 425 μm, resulting in approximately half of the Au-Sn layer peeling off, and a lower peeling evaluation of 48%.

Therefore, it is known that if the width of the Au-Sn layer is less than 250 μm, the peeling of the Au-Sn layer can be suppressed. Furthermore, it is known that if the width of the corner is smaller than the width of the straight section, the peeling of the Au-Sn layer can be further suppressed.

Industrial availability

According to this embodiment, damage to the glass encapsulation cover member bonded to the encapsulation substrate and peeling of the Au-Sn layer disposed on the encapsulation cover member are suppressed. Therefore, the encapsulation cover member and encapsulation body of this embodiment can be appropriately applied to semiconductor devices and light-emitting devices that seal light-emitting elements such as semiconductor lasers (LDs) or LEDs within the encapsulation body.

Symbol Explanation

1. 701 - Package body; 2. 702 - Package substrate; 6. 706 - Bonding layer; 21. 721. 731 - Recess; 22 - Bonding surface; 3. 103. 203. 303. 403. 503. 703. 803 - Cover component for packaging; 4. 4G. 704 - Metallization layer; 5. 5A. 5B. 5C. 5F. 5G - Au-Sn layer; 51. 51A. 51B. 51C. 51E. 51G - Corner; 5D - First Au-Sn layer; 5E - Second Au-Sn layer; 30. 3F. 730 - Glass component; 31 - Upper surface; 32. 32F - Lower surface; 33. 533 - Bonding portion; 34. 534 - Light transmission portion.

Claims (10)

1. A cover component for packaging, characterized in that, The device includes a glass component, which has a joint portion configured as a planar frame and a light-transmitting portion disposed inside the joint portion. The joint has: One or more metallization layers are formed in a frame shape at the joint of the glass component; and One or more Au-Sn layers in the post-reflow soldering state are disposed on the metallization layer and have a frame shape with a width of less than 250 μm. The width of the metallization layer is the same as or wider than the width of the Au-Sn layer. The frame shape of the Au-Sn layer with one or more layers has one or more corners, and the maximum width of the corners is less than the width of the frame shape of the Au-Sn layer excluding the corners. 2. The sealing cap component according to claim 1, characterized in that, The corners are chamfered. 3. The sealing cap component according to claim 1 or 2, characterized in that, The Au-Sn layer with one or more layers has a first Au-Sn layer and a second Au-Sn layer, wherein the second Au-Sn layer is disposed with a gap separating it from the inner side of the first Au-Sn layer. 4. The sealing cap component according to claim 1 or 2, characterized in that, The thickness of the glass component is greater than 50 μm and less than 3000 μm. 5. The sealing cap component according to claim 1 or 2, characterized in that, The width of the Au-Sn layer is 50 μm or more. 6. The sealing cap component according to claim 1 or 2, characterized in that, The width of the Au-Sn layer is less than 230 μm. 7. The sealing cap component according to claim 1 or 2, characterized in that, The maximum width of the corner is more than 30 μm and less than 130 μm. 8. The sealing cap component according to claim 1 or 2, characterized in that, The glass component is flat. 9. The sealing cap component according to claim 1 or 2, characterized in that, The glass component is box-shaped. 10. A method for manufacturing a package, characterized in that, Prepare at least one packaging substrate and the packaging cover component as described in any one of claims 1 to 9. The Au-Sn layer of the encapsulation cover component is abutted against the encapsulation substrate, and the Au-Sn layer is melted and solidified, thereby bonding the encapsulation cover component and the encapsulation substrate.