HK1229962B - Acoustic wave elements and ladder filters using same - Google Patents
Acoustic wave elements and ladder filters using same Download PDFInfo
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Description
技术领域Technical Field
本发明涉及声波元件和使用声波元件的梯型滤波器。The present invention relates to an acoustic wave element and a ladder-type filter using the same.
相关申请的交叉引用CROSS-REFERENCE TO RELATED APPLICATIONS
本申请依据美国法典第35卷第119节和PCT第8条主张2014年2月18日提交的题为“ACOUSTIC WAVE ELEMENTS AND LADDER FILTERS USING SAME”的共同未决日本专利申请No.2014-028059的权益,其通过引用整体合并于此以用于所有目的。This application claims the benefit under 35 U.S.C. § 119 and PCT Article 8 of co-pending Japanese Patent Application No. 2014-028059, filed February 18, 2014, entitled “ACOUSTIC WAVE ELEMENTS AND LADDER FILTERS USING SAME,” which is hereby incorporated by reference herein in its entirety for all purposes.
背景技术Background Art
图1和图2示出常规声波元件6000的示例,其可用于诸如无线通信装置之类的电子设备中。图1示出常规声波元件6000的平面图,图2示出沿图1的线B-BB取得的对应横截面图。如图1和2所示,常规声波元件6000包括第一叉指换能器(IDT)电极1000和第二IDT电极2000,二者都设置在压电体5000的上表面上。常规声波元件6000还包括将第一IDT电极1000连接到第二IDT电极2000的连接布线3000、以及设置在连接布线3000上的加强电极4000。设置加强电极4000以用于减小将第一IDT电极1000连接到第二IDT电极2000的连接布线3000的电阻。此外,连接布线3000包括下连接布线3002和上连接布线3001。上连接布线3001设置在下连接布线3002的上表面上。Figures 1 and 2 illustrate an example of a conventional acoustic wave element 6000, which can be used in electronic devices such as wireless communication devices. Figure 1 shows a plan view of the conventional acoustic wave element 6000, and Figure 2 shows a corresponding cross-sectional view taken along line B-BB in Figure 1. As shown in Figures 1 and 2, the conventional acoustic wave element 6000 includes a first interdigital transducer (IDT) electrode 1000 and a second IDT electrode 2000, both of which are disposed on the upper surface of a piezoelectric body 5000. The conventional acoustic wave element 6000 also includes a connecting wiring 3000 connecting the first IDT electrode 1000 to the second IDT electrode 2000, and a reinforcing electrode 4000 disposed on the connecting wiring 3000. The reinforcing electrode 4000 is provided to reduce the resistance of the connecting wiring 3000 connecting the first IDT electrode 1000 to the second IDT electrode 2000. In addition, the connecting wiring 3000 includes a lower connecting wiring 3002 and an upper connecting wiring 3001. The upper connecting wiring 3001 is disposed on the upper surface of the lower connecting wiring 3002.
日本专利申请公开No.2011-71912描述了这样的常规声波元件的示例。Japanese Patent Application Laid-Open No. 2011-71912 describes an example of such a conventional acoustic wave element.
引文列表Citation List
专利文献Patent Literature
专利文献1:日本专利申请公开No.2011-71912Patent Document 1: Japanese Patent Application Publication No. 2011-71912
发明内容Summary of the Invention
本申请的方面和实施例涉及声波元件和使用声波元件的梯型滤波器。Aspects and embodiments of the present application relate to an acoustic wave element and a ladder-type filter using the acoustic wave element.
在诸如上面参照图1和2论述的常规声波元件中,仅在连接布线的上表面上设置加强电极不足以充分地减小电损耗。因此,根据本发明的声波元件的实施例可配置为大幅度地减小电连接在IDT电极之间的连接布线中的电损耗,如下面更详细地论述的那样。In conventional acoustic wave elements such as those discussed above with reference to Figures 1 and 2, merely providing a reinforcing electrode on the upper surface of the connection wiring is insufficient to sufficiently reduce electrical loss. Therefore, embodiments of the acoustic wave element according to the present invention can be configured to significantly reduce electrical loss in the connection wiring electrically connected between IDT electrodes, as discussed in more detail below.
根据一实施例,一种声波元件包括具有上表面的压电体,设置在所述压电体上方的叉指换能器(IDT)电极、设置在所述压电体上方并且连接到所述IDT电极的连接布线、以及设置在所述连接布线上方的加强电极,所述连接布线具有下连接布线和设置在所述下连接布线上方的上连接布线,所述加强电极接触并且电连接到所述下连接布线。According to one embodiment, an acoustic wave element includes a piezoelectric body having an upper surface, an interdigital transducer (IDT) electrode arranged above the piezoelectric body, a connecting wiring arranged above the piezoelectric body and connected to the IDT electrode, and a reinforcing electrode arranged above the connecting wiring, the connecting wiring having a lower connecting wiring and an upper connecting wiring arranged above the lower connecting wiring, the reinforcing electrode contacting and electrically connected to the lower connecting wiring.
在所述声波元件的一示例中,所述连接布线包括沿与所述压电体的上表面垂直的方向延伸的孔电极,所述加强电极经由所述孔电极电连接到所述下连接布线。在一示例中,所述孔电极延伸穿过所述上连接布线和所述下连接布线,在所述上连接布线中的所述孔电极的第一直径大于在所述下连接布线中的所述孔电极的第二直径。In one example of the acoustic wave element, the connecting wiring includes a hole electrode extending perpendicularly to the upper surface of the piezoelectric body, and the reinforcing electrode is electrically connected to the lower connecting wiring via the hole electrode. In one example, the hole electrode extends through the upper connecting wiring and the lower connecting wiring, and a first diameter of the hole electrode in the upper connecting wiring is larger than a second diameter of the hole electrode in the lower connecting wiring.
所述下连接布线的材料可不同于所述上连接布线的材料。特别地,所述下连接布线的材料的氧亲和力可小于所述上连接布线的材料的氧亲和力。The material of the lower connection wiring may be different from the material of the upper connection wiring. In particular, the oxygen affinity of the material of the lower connection wiring may be lower than the oxygen affinity of the material of the upper connection wiring.
所述加强电极可接触并且电连接到所述下连接布线的上表面。在一示例中,在沿与所述压电体的上表面垂直的方向取得的横截面中,所述上连接布线被所述加强电极分开以提供第一和第二上连接布线,所述第一和第二上连接布线经由所述加强电极彼此电连接。所述声波元件还可包括设置在所述第一和第二上连接布线之间的所述压电体上的第三连接电极,所述第三连接布线被绝缘层覆盖,所述加强电极延伸于所述绝缘层之上。在另一示例中,在沿与所述压电体的上表面垂直的方向取得的横截面中,所述下连接布线被所述加强电极分开以提供第一和第二下连接布线,所述第一和第二下连接布线经由所述加强电极彼此电连接。所述声波元件还可包括设置在所述第一和第二下连接布线之间的所述压电体上的第三连接布线,所述第三连接布线被绝缘层覆盖,所述加强电极延伸于所述绝缘层之上。The reinforcement electrode may contact and be electrically connected to the upper surface of the lower connection wiring. In one example, in a cross section taken in a direction perpendicular to the upper surface of the piezoelectric body, the upper connection wiring is separated by the reinforcement electrode to provide a first and a second upper connection wiring, and the first and the second upper connection wiring are electrically connected to each other via the reinforcement electrode. The acoustic wave element may further include a third connection electrode on the piezoelectric body arranged between the first and the second upper connection wiring, the third connection wiring is covered by an insulating layer, and the reinforcement electrode extends above the insulating layer. In another example, in a cross section taken in a direction perpendicular to the upper surface of the piezoelectric body, the lower connection wiring is separated by the reinforcement electrode to provide a first and a second lower connection wiring, and the first and the second lower connection wiring are electrically connected to each other via the reinforcement electrode. The acoustic wave element may further include a third connection wiring on the piezoelectric body arranged between the first and the second lower connection wiring, the third connection wiring is covered by an insulating layer, and the reinforcement electrode extends above the insulating layer.
在一示例中,所述IDT电极包括下IDT电极和设置在所述下IDT电极上方的上IDT电极,所述下IDT电极的材料与所述下连接布线的材料相同,所述上IDT电极的材料与所述上连接布线的材料相同。In one example, the IDT electrode includes a lower IDT electrode and an upper IDT electrode disposed above the lower IDT electrode. The material of the lower IDT electrode is the same as that of the lower connection wiring, and the material of the upper IDT electrode is the same as that of the upper connection wiring.
根据另一实施例,一种声波元件包括具有上表面的压电体、设置在所述压电体上的第一叉指换能器(IDT)电极、设置在所述压电体上的第二IDT电极、设置在所述压电体的上表面上并且电连接到所述第一IDT电极和所述第二IDT电极的连接布线、以及设置在所述连接布线上方的加强电极,所述连接布线包括下连接布线和设置在所述下连接布线上方的上连接布线,所述加强电极接触并且电连接到所述下连接布线。According to another embodiment, an acoustic wave element includes a piezoelectric body having an upper surface, a first interdigital transducer (IDT) electrode arranged on the piezoelectric body, a second IDT electrode arranged on the piezoelectric body, a connecting wiring arranged on the upper surface of the piezoelectric body and electrically connected to the first IDT electrode and the second IDT electrode, and a reinforcement electrode arranged above the connecting wiring, the connecting wiring including a lower connecting wiring and an upper connecting wiring arranged above the lower connecting wiring, the reinforcement electrode contacting and electrically connected to the lower connecting wiring.
在一示例中,所述下连接布线由第一材料形成,所述上连接布线由第二材料形成,所述第一材料的氧亲和力小于所述第二材料的氧亲和力。In one example, the lower connection wiring is formed of a first material, and the upper connection wiring is formed of a second material, and the oxygen affinity of the first material is lower than the oxygen affinity of the second material.
在另一示例中,所述加强电极还接触并且电连接到所述上连接布线。所述连接布线还可包括沿与所述压电体的上表面垂直的方向延伸穿过所述上连接布线和所述下连接布线的孔电极。在一示例中,所述孔电极具有在所述上连接布线中的第一直径和在所述下连接布线中的第二直径,所述第一直径大于所述第二直径。所述加强电极经由所述孔电极电连接到所述下连接布线。In another example, the reinforcing electrode further contacts and is electrically connected to the upper connecting wiring. The connecting wiring may further include a hole electrode extending through the upper connecting wiring and the lower connecting wiring in a direction perpendicular to the upper surface of the piezoelectric body. In one example, the hole electrode has a first diameter in the upper connecting wiring and a second diameter in the lower connecting wiring, the first diameter being larger than the second diameter. The reinforcing electrode is electrically connected to the lower connecting wiring via the hole electrode.
在另一示例中,在沿与所述压电体的上表面垂直的方向上取得的横截面中,所述连接布线,包括所述上和下连接布线二者,被所述加强电极分开以提供第一和第二连接布线,所述第一和第二连接布线经由所述加强电极彼此电连接。所述声波元件还可包括设置在所述第一和第二连接布线之间的所述压电体上的第三连接布线,所述第三连接布线被绝缘层覆盖,所述加强电极延伸于所述绝缘层之上。In another example, in a cross section taken in a direction perpendicular to the upper surface of the piezoelectric body, the connection wiring, including both the upper and lower connection wirings, is separated by the reinforcing electrode to provide first and second connection wirings, and the first and second connection wirings are electrically connected to each other via the reinforcing electrode. The acoustic wave element may further include a third connection wiring disposed on the piezoelectric body between the first and second connection wirings, the third connection wiring being covered by an insulating layer, and the reinforcing electrode extending above the insulating layer.
另一实施例涉及一种梯型滤波器,其包括上述示例中的任何示例的声波元件。Another embodiment relates to a ladder-type filter including the acoustic wave element of any of the above examples.
根据另一实施例,一种声波元件包括具有上表面的压电体、设置在所述压电体上的第一叉指换能器(IDT)电极、设置在所述压电体上的第二IDT电极、设置在所述压电体的上表面上并且电连接到所述第一IDT电极和所述第二IDT电极的连接布线、以及用于减小所述连接布线中的电损耗的装置。According to another embodiment, an acoustic wave element includes a piezoelectric body having an upper surface, a first interdigital transducer (IDT) electrode arranged on the piezoelectric body, a second IDT electrode arranged on the piezoelectric body, a connecting wiring arranged on the upper surface of the piezoelectric body and electrically connected to the first IDT electrode and the second IDT electrode, and a device for reducing electrical loss in the connecting wiring.
下面将详细论述这些示例性方面和实施例的又另一些方面、实施例和优点。这里公开的实施例可以按与这里公开的原理中的至少一个一致的任何方式与其他实施例相组合,对“一实施例”、“一些实施例”、“一替代实施例”、“各种实施例”、“一个实施例”等的提及不一定是互斥的,旨在表明所描述的特定的特征、结构、或特性可被包括在至少一个实施例中。文中这些术语的出现不一定全部都涉及同一实施例。Still other aspects, embodiments, and advantages of these exemplary aspects and embodiments are discussed in detail below. The embodiments disclosed herein may be combined with other embodiments in any manner consistent with at least one of the principles disclosed herein, and references to "an embodiment," "some embodiments," "an alternative embodiment," "various embodiments," "one embodiment," etc. are not necessarily mutually exclusive and are intended to indicate that the particular features, structures, or characteristics being described may be included in at least one embodiment. The appearances of these terms herein do not necessarily all refer to the same embodiment.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
下面将参照附图论述至少一实施例的各个方面,附图无意是按比例绘制的。包括附图以提供对各个方面和实施例的示范和进一步理解,并且其被包括在本说明书中构成本说明书的一部分,但是无意定义对本发明的限制。在附图中,各图中示出的每个相同或几乎相同的部件由类似的数字表示。为了清楚起见,可能并非每个部件在每幅附图中都被标注。附图中:Various aspects of at least one embodiment will be discussed below with reference to the accompanying drawings, which are not intended to be drawn to scale. The accompanying drawings are included to provide illustration and further understanding of the various aspects and embodiments, and are incorporated into and constitute a part of this specification, but are not intended to define limitations of the invention. In the drawings, each identical or nearly identical component illustrated in various figures is represented by a like numeral. For clarity, not every component may be labeled in every figure. In the drawings:
图1是示意性示出常规声波元件的示例的平面图;FIG1 is a plan view schematically showing an example of a conventional acoustic wave element;
图2是沿图1中的线B-BB取得的图1的常规声波元件的横截面视图;FIG2 is a cross-sectional view of the conventional acoustic wave element of FIG1 taken along line B-BB in FIG1;
图3是示意性示出根据本发明各方面的声波元件的一示例的平面图;3 is a plan view schematically showing an example of an acoustic wave element according to aspects of the present invention;
图4A是沿图3中的线A-AA取得的图3的声波元件的示例的横截面视图;4A is a cross-sectional view of an example of the acoustic wave element of FIG. 3 taken along line A-AA in FIG. 3 ;
图4B是沿图3中的线A-AA取得的图3的声波元件的示例的横截面视图;4B is a cross-sectional view of an example of the acoustic wave element of FIG. 3 taken along line A-AA in FIG. 3 ;
图4C是沿图3中的线A-AA取得的图3的声波元件的示例的横截面视图;4C is a cross-sectional view of an example of the acoustic wave element of FIG. 3 taken along line A-AA in FIG. 3 ;
图4D是沿图3中的线A-AA取得的图3的声波元件的示例的横截面视图;4D is a cross-sectional view of an example of the acoustic wave element of FIG. 3 taken along line A-AA in FIG. 3 ;
图5A是常规声波元件的一示例的横截面视图,示出了连接布线的接触电阻值的测量条件;5A is a cross-sectional view of an example of a conventional acoustic wave element, showing measurement conditions of a contact resistance value of a connection wiring;
图5B是图5A的示例常规声波元件的对应平面图;FIG5B is a corresponding plan view of the exemplary conventional acoustic wave element of FIG5A;
图6A是根据本发明各方面的声波元件的一示例的横截面视图,示出了连接布线的接触电阻值的测量条件;6A is a cross-sectional view of an example of an acoustic wave element according to aspects of the present invention, illustrating measurement conditions of a contact resistance value of a connection wiring;
图6B是图6A的示例声波元件的对应平面图;FIG6B is a corresponding plan view of the example acoustic wave element of FIG6A;
图7A是根据本发明各方面的声波元件的另一示例的横截面视图,示出了连接布线的接触电阻值的测量条件;7A is a cross-sectional view of another example of the acoustic wave element according to aspects of the present invention, illustrating measurement conditions of a contact resistance value of a connection wiring;
图7B是图7A的示例声波元件的对应平面图;FIG7B is a corresponding plan view of the example acoustic wave element of FIG7A ;
图8是示出与图5A-7B的示例对应的连接布线的接触电阻值的测量结果的特性图;8 is a characteristic diagram showing measurement results of contact resistance values of connection wiring corresponding to the example of FIGS. 5A to 7B ;
图9A是常规声波元件的一示例的横截面视图,示出了连接布线的每单位长度电阻值的测量条件;9A is a cross-sectional view of an example of a conventional acoustic wave element, showing measurement conditions of a resistance value per unit length of a connection wiring;
图9B是图9A的示例常规声波元件的对应平面图;FIG9B is a corresponding plan view of the exemplary conventional acoustic wave element of FIG9A;
图10A是根据本发明各方面的声波元件的一示例的横截面视图,示出了连接布线的每单位长度电阻值的测量条件;10A is a cross-sectional view of an example of an acoustic wave element according to aspects of the present invention, illustrating measurement conditions of a resistance value per unit length of a connection wiring;
图10B是图10A的示例声波元件的对应平面图;FIG10B is a corresponding plan view of the example acoustic wave element of FIG10A;
图11A是根据本发明各方面的声波元件的另一示例的横截面视图,示出了连接布线的每单位长度电阻值的测量条件;11A is a cross-sectional view of another example of the acoustic wave element according to aspects of the present invention, illustrating measurement conditions of a resistance value per unit length of a connection wiring;
图11B是图11A的示例声波元件的对应平面图;FIG11B is a corresponding plan view of the example acoustic wave element of FIG11A;
图12是示出与图9A-11B的示例对应的连接布线的电阻值的测量结果的特性图;12 is a characteristic diagram showing measurement results of resistance values of connection wiring corresponding to the example of FIGS. 9A-11B ;
图13是根据本发明各方面的梯型滤波器的一示例的电路图;以及FIG13 is a circuit diagram of an example of a ladder-type filter according to aspects of the present invention; and
图14是示出根据本发明各方面的梯型滤波器的通过特性的特性图。FIG. 14 is a characteristic diagram illustrating pass characteristics of a ladder-type filter according to aspects of the present invention.
具体实施方式DETAILED DESCRIPTION
下面将参照附图和一示例性声波元件60对某些方面和实施例进行描述。Certain aspects and embodiments will be described below with reference to the accompanying drawings and an exemplary acoustic wave element 60 .
图3是示意性示出声波元件60的一实施例的平面图。图4A-4D是沿图3中的线A-AA取得的声波元件60的各种示例的横截面视图。Fig. 3 is a plan view schematically illustrating an embodiment of the acoustic wave element 60. Figs. 4A-4D are cross-sectional views of various examples of the acoustic wave element 60 taken along line A-AA in Fig. 3 .
根据一实施例,声波元件60包括由单晶压电材料制成的压电体50。第一IDT电极10和第二IDT电极20设置在压电体50的上表面上。声波元件60还包括在与第一IDT电极10和第二IDT电极20产生的声波的传播方向邻近IDT电极10、20设置的两个反射器13。声波元件60还包括电连接第一IDT电极10和第二IDT电极20的连接布线30、以及设置在连接布线30的上表面上以用于减小连接布线30的电损耗的加强电极40。第一IDT电极10具有梳形电极,其每个包括线形的第一母线条(bus bar)12和相对于线形第一母线条12的线方向垂直延伸的多个第一电极指11。第一IDT电极10由对置的梳形电极制成。与第一IDT电极10类似,第二IDT电极20包括梳形电极,其每个具有第二母线条22和多个第二电极指21。第一IDT电极10、第二IDT电极20、反射器13、连接布线30、以及加强电极40可通过对金属性薄膜进行图案化来形成。虽然图中未示出,但是本领域技术人员将意识到,受益于本公开,通过设置覆盖压电体50、第一IDT电极10、第二IDT电极20、反射器13、连接布线30、以及加强电极40的上表面的电介质层,根据某些实施例的声波元件60可得到其温度特性的改善。According to one embodiment, an acoustic wave element 60 includes a piezoelectric body 50 made of a single crystal piezoelectric material. A first IDT electrode 10 and a second IDT electrode 20 are disposed on the upper surface of the piezoelectric body 50. The acoustic wave element 60 also includes two reflectors 13 disposed adjacent to the IDT electrodes 10 and 20 in the direction of propagation of the acoustic waves generated by the first and second IDT electrodes 10 and 20. The acoustic wave element 60 also includes a connection wiring 30 electrically connecting the first and second IDT electrodes 10 and 20, and a reinforcing electrode 40 disposed on the upper surface of the connection wiring 30 to reduce electrical loss in the connection wiring 30. The first IDT electrode 10 has a comb-shaped electrode structure, each of which includes a linear first bus bar 12 and a plurality of first electrode fingers 11 extending perpendicularly to the linear direction of the linear first bus bar 12. The first IDT electrode 10 is formed of opposing comb-shaped electrodes. Similar to the first IDT electrode 10, the second IDT electrode 20 has a comb-shaped electrode structure, each of which includes a second bus bar 22 and a plurality of second electrode fingers 21. The first IDT electrode 10, the second IDT electrode 20, the reflector 13, the connection wiring 30, and the reinforcing electrode 40 can be formed by patterning a metallic thin film. Although not shown in the figures, those skilled in the art will appreciate that, with the benefit of this disclosure, by providing a dielectric layer covering the upper surfaces of the piezoelectric body 50, the first IDT electrode 10, the second IDT electrode 20, the reflector 13, the connection wiring 30, and the reinforcing electrode 40, the acoustic wave element 60 according to certain embodiments can achieve improved temperature characteristics.
在一实施例中,连接布线30包括上连接布线31和下连接布线32。下连接布线32和加强电极40彼此接触且电连接,从而能够大幅降低连接布线30中的电损耗。当在薄膜加工期间在上连接布线31和下连接布线32的表面上形成的氧化膜阻挡了连接布线30和加强电极40之间的电连接时,会产生电损耗。换言之,由于氧化膜的存在,上述提供加强电极40而实现的减小连接布线30电阻的效果会丧失或变差。鉴于上述理由,某些方面和实施例解决了形成在连接布线30的表面上的氧化膜问题,并且通过减小连接布线30和加强电极40之间的接触电阻而降低了连接布线30中的电损耗。In one embodiment, the connection wiring 30 includes an upper connection wiring 31 and a lower connection wiring 32. The lower connection wiring 32 and the reinforcement electrode 40 are in contact with each other and electrically connected, thereby significantly reducing the electrical loss in the connection wiring 30. When the oxide film formed on the surface of the upper connection wiring 31 and the lower connection wiring 32 during thin film processing blocks the electrical connection between the connection wiring 30 and the reinforcement electrode 40, electrical loss is generated. In other words, due to the presence of the oxide film, the effect of reducing the resistance of the connection wiring 30 achieved by providing the reinforcement electrode 40 is lost or deteriorated. In view of the above reasons, certain aspects and embodiments solve the problem of the oxide film formed on the surface of the connection wiring 30, and reduce the electrical loss in the connection wiring 30 by reducing the contact resistance between the connection wiring 30 and the reinforcement electrode 40.
根据一实施例,形成上连接布线31和下连接布线32的材料可优选是不易在表面上形成氧化膜的材料。通常,对氧化的易感性由氧亲和力表示。此外,因为在一实施例中连接布线30中的电损耗降低效果的主要原因在于其中下连接布线32和加强电极40彼此接触并且电连接的结构,所以可优选的是,使形成下连接布线32的材料的氧亲和力小于形成上连接布线31的材料的氧亲和力。材料的氧亲和力一般与标准自由能相关联,标准自由能(ΔG/kJmol-1)越小,氧亲和力就越小。代表性材料按标准自由能升序例举如下:According to one embodiment, the material forming the upper connection wiring 31 and the lower connection wiring 32 may preferably be a material that is not prone to forming an oxide film on the surface. Generally, susceptibility to oxidation is represented by oxygen affinity. In addition, because the main reason for the electric loss reduction effect in the connection wiring 30 in one embodiment lies in the structure in which the lower connection wiring 32 and the reinforcement electrode 40 are in contact with each other and electrically connected, it is preferable that the oxygen affinity of the material forming the lower connection wiring 32 is smaller than the oxygen affinity of the material forming the upper connection wiring 31. The oxygen affinity of a material is generally associated with the standard free energy, and the smaller the standard free energy (ΔG/kJmol -1 ), the smaller the oxygen affinity. Representative materials are listed below in ascending order of standard free energy:
Pt<Ru<Cu<Mo≈W<<Ti<Al<Mg。Pt<Ru<Cu<Mo≈W<<Ti<Al<Mg.
将理解,虽然在至少一实施例中描述了上连接布线31和下连接布线32的两层结构,但是该结构不限于两层,可配置为三层或更多层。It will be understood that although a two-layer structure of the upper and lower connection wirings 31 and 32 is described in at least one embodiment, the structure is not limited to two layers and may be configured with three or more layers.
下面将参照图4A-4D详细描述根据某些实施例的连接布线30和加强电极40的结构。The structures of the connection wiring 30 and the reinforcing electrode 40 according to some embodiments will be described in detail below with reference to FIGS. 4A-4D .
如图4A-4D所示,根据某些实施例,在连接布线30中,至少下连接布线32和加强电极40彼此接触并且电连接。下连接布线32、上连接布线31、加强电极40顺序设置在压电体50的上表面上。此外,连接布线30可利用薄膜加工与第一IDT电极10和第二IDT电极20一体且同时形成。此外可优选的是,使用相同的结构(例如,上下两层结构)和相同的材料以用于简化制造工艺。As shown in Figures 4A-4D, according to certain embodiments, among the connection wiring 30, at least the lower connection wiring 32 and the reinforcing electrode 40 are in contact with each other and electrically connected. The lower connection wiring 32, the upper connection wiring 31, and the reinforcing electrode 40 are sequentially arranged on the upper surface of the piezoelectric body 50. Furthermore, the connection wiring 30 can be formed simultaneously with the first IDT electrode 10 and the second IDT electrode 20 using thin film processing. Furthermore, it is preferable to use the same structure (e.g., a two-layer structure) and the same materials to simplify the manufacturing process.
参照图4A,在一实施例中,其特征在于上连接布线31被加强电极40分开,并且下连接布线32的上表面与加强电极40彼此接触且电连接。此外,上连接布线31的上表面和侧表面接触并且电连接到加强电极40。4A , in one embodiment, the upper connection wiring 31 is separated by a reinforcing electrode 40, and the upper surface of the lower connection wiring 32 is in contact with and electrically connected to the reinforcing electrode 40. Furthermore, the upper surface and side surfaces of the upper connection wiring 31 are in contact with and electrically connected to the reinforcing electrode 40.
参照图4B,在另一实施例中,除了图4A所示的示例的特性之外,下连接布线32也被加强电极40分开,并且压电体50也具有与加强电极40相接触的表面。加强电极40的特征可在于接触并且电连接到下连接布线32的侧表面的结构。4B , in another embodiment, in addition to the characteristics of the example shown in FIG 4A , the lower connection wiring 32 is also separated by the reinforcing electrode 40, and the piezoelectric body 50 also has a surface in contact with the reinforcing electrode 40. The reinforcing electrode 40 may be characterized by a structure in contact with and electrically connected to the side surface of the lower connection wiring 32.
参照图4C,根据另一实施例,设置沿与压电体50的上表面垂直的方向延伸穿过上连接布线31和下连接布线32的孔电极70,使得下连接布线32和加强电极40彼此接触并且电连接。此外,关于沿与压电体50的上表面平行的方向取得的孔电极70的横截面,可优选的是,使设置在下连接布线32中的孔电极70的横截面积小于设置在上连接布线31中的孔电极70的横截面积,使得不仅下连接布线32的侧面,而且其上表面可以接触并且电连接到加强电极40。结果,接触面积更大,从而进一步减小接触电阻。Referring to FIG. 4C , according to another embodiment, a hole electrode 70 is provided that extends through the upper and lower connecting wirings 31 and 32 in a direction perpendicular to the upper surface of the piezoelectric body 50, thereby bringing the lower connecting wiring 32 and the reinforcing electrode 40 into contact and electrically connected. Furthermore, with respect to a cross-section of the hole electrode 70 taken in a direction parallel to the upper surface of the piezoelectric body 50, it is preferable to make the cross-sectional area of the hole electrode 70 provided in the lower connecting wiring 32 smaller than the cross-sectional area of the hole electrode 70 provided in the upper connecting wiring 31. This allows not only the side surfaces of the lower connecting wiring 32 but also its upper surface to contact and be electrically connected to the reinforcing electrode 40. As a result, the contact area is increased, further reducing the contact resistance.
将理解,孔电极70的形状不限于图4C所示的示例,而是可具有任何横截面形状,包括例如圆形、矩形等。此外,横截面可以在孔电极70的深度方向上不同地配置。还将理解,虽然图中未示出,但是孔电极70可以仅设置在上连接布线31中,使得下连接布线32的上表面接触并且电连接到孔电极70。It will be understood that the shape of the hole electrode 70 is not limited to the example shown in FIG4C , but may have any cross-sectional shape, including, for example, a circular shape, a rectangular shape, etc. In addition, the cross-section may be configured differently in the depth direction of the hole electrode 70. It will also be understood that, although not shown in the drawings, the hole electrode 70 may be provided only in the upper connection wiring 31 so that the upper surface of the lower connection wiring 32 contacts and is electrically connected to the hole electrode 70.
参照图4D,其示出根据某些示例的连接布线的另一结构。在该结构中,当被加强电极40分开的一连接布线30被指定为第一连接布线100,另一连接布线30被指定为第二连接布线110时,第三连接布线120设置在第一连接布线100和第二连接布线110之间的压电体50的上表面上。第三连接布线120被绝缘层80覆盖。作为特征结构,加强电极40经由绝缘层80与第三连接布线120的上方立体交叉,同时与第一连接布线100和第二连接布线110彼此接触和电连接。第三连接布线120可以是具有与第一连接布线100或第二连接布线110不同的电势的电极。在一示例中,第三连接布线120可以与第一连接布线100和第二连接布线110一体且同时形成。可优选地是,采用相同结构(例如,上下两层结构)和相同材料以简化制造工艺。Referring to Figure 4D, it shows another structure of the connection wiring according to some examples. In this structure, when a connection wiring 30 separated by the reinforcing electrode 40 is designated as the first connection wiring 100 and the other connection wiring 30 is designated as the second connection wiring 110, the third connection wiring 120 is arranged on the upper surface of the piezoelectric body 50 between the first connection wiring 100 and the second connection wiring 110. The third connection wiring 120 is covered by an insulating layer 80. As a characteristic structure, the reinforcing electrode 40 is three-dimensionally crossed with the upper part of the third connection wiring 120 via the insulating layer 80, and is in contact with and electrically connected to the first connection wiring 100 and the second connection wiring 110. The third connection wiring 120 can be an electrode having a different potential from the first connection wiring 100 or the second connection wiring 110. In one example, the third connection wiring 120 can be integrated with the first connection wiring 100 and the second connection wiring 110 and formed simultaneously. It is preferred to adopt the same structure (for example, a two-layer structure) and the same material to simplify the manufacturing process.
下面将参照图5A-7B,将声波元件60的实施例与常规声波元件相比较,来描述连接布线30和加强电极40之间的接触电阻,图5A-7B示出了测量连接布线30和加强电极40中的接触电阻的示例。5A-7B , the embodiment of the acoustic wave element 60 will be compared with a conventional acoustic wave element to describe the contact resistance between the connection wiring 30 and the reinforcing electrode 40 , which shows an example of measuring the contact resistance in the connection wiring 30 and the reinforcing electrode 40 .
图5A和5B分别是与图2的常规声波元件的结构对应的横截面视图和平面图。图5A和5B示出了其中加强电极40仅接触和电连接到上连接布线31的比较例。5A and 5B are a cross-sectional view and a plan view, respectively, corresponding to the structure of the conventional acoustic wave element of Fig. 2. Figs. 5A and 5B show a comparative example in which the reinforcing electrode 40 contacts and is electrically connected to only the upper connection wiring 31. In the example of Figs.
图6A和6B分别示出声波元件60的实施例的一示例的横截面视图和对应的平面图,其中与上连接布线31和下连接布线32都彼此接触和电连接。6A and 6B respectively illustrate a cross-sectional view and a corresponding plan view of an example of an embodiment of an acoustic wave element 60 in which both the upper connection wiring 31 and the lower connection wiring 32 are in contact with and electrically connected to each other.
图7A和7B分别示出声波元件60的实施例的另一示例的横截面视图和对应的平面图,其中仅下连接布线32接触和电连接到加强电极40。7A and 7B respectively illustrate a cross-sectional view and a corresponding plan view of another example of an embodiment of an acoustic wave element 60 in which only the lower connection wiring 32 contacts and is electrically connected to the reinforcement electrode 40 .
对于这些示例中的每个,加强电极40由铝(Al)制成,上连接布线31由铝合金制成,下连接布线32由钼(Mo)制成,加强电极40和连接布线30之间的总接触面积为400μm2。For each of these examples, the reinforcing electrode 40 was made of aluminum (Al), the upper connection wiring 31 was made of aluminum alloy, the lower connection wiring 32 was made of molybdenum (Mo), and the total contact area between the reinforcing electrode 40 and the connection wiring 30 was 400 μm 2 .
图8示出了连接布线30和加强电极40之间的每单位面积接触电阻的测量结果。在图8中,对于图5A-7B中的每个绘制了五个测量点。如图8所示,图6A-6B和7A-7B的实施例的每单位面积接触电阻低于图5A-5B的比较例的每单位面积接触电阻。这是因为在薄膜加工期间在上连接布线31的上表面上形成的氧化膜增大了加强电极40和连接布线30之间的每单位面积接触电阻。此外,图7A-7B的实施例的每单位面积接触电阻低于图5A-5B和6A-6B的实施例的每单位面积接触电阻。这是因为下连接布线32(Mo)的氧亲和力小于上连接布线31(Al合金),使得氧化膜更不易形成。此外,比较每单位面积接触电阻的测量值表明,图6A-6B和7A-7B的实施例的测量值比图5A-5B的比较例变化更小且更稳定。此外,图7A-7B的实施例的变化小于图6A-6B的实施例的变化。这表明加强电极40和其上可能形成氧化膜的上连接布线31之间的接触面积越大,接触电阻的测量值的变化越大。因此,根据某些实施例配置连接布线30使得至少下连接布线32接触且电连接到加强电极40减小了连接布线30和加强电极40之间的接触电阻。结果,可以减小连接布线30中的电损耗。Figure 8 shows the measurement results of the contact resistance per unit area between the connecting wiring 30 and the reinforcing electrode 40. In Figure 8, five measurement points are plotted for each of Figures 5A-7B. As shown in Figure 8, the contact resistance per unit area of the embodiment of Figures 6A-6B and 7A-7B is lower than the contact resistance per unit area of the comparative example of Figures 5A-5B. This is because the oxide film formed on the upper surface of the upper connecting wiring 31 during thin film processing increases the contact resistance per unit area between the reinforcing electrode 40 and the connecting wiring 30. In addition, the contact resistance per unit area of the embodiment of Figures 7A-7B is lower than the contact resistance per unit area of the embodiment of Figures 5A-5B and 6A-6B. This is because the oxygen affinity of the lower connecting wiring 32 (Mo) is less than that of the upper connecting wiring 31 (Al alloy), making the oxide film less likely to form. In addition, comparing the measured values of the contact resistance per unit area shows that the measured values of the embodiment of Figures 6A-6B and 7A-7B are less variable and more stable than the comparative example of Figures 5A-5B. Furthermore, the variation in the embodiment of Figures 7A-7B is smaller than that of the embodiment of Figures 6A-6B. This indicates that the larger the contact area between the reinforcing electrode 40 and the upper connecting wiring 31, on which an oxide film may have formed, the greater the variation in the measured value of the contact resistance. Therefore, according to certain embodiments, configuring the connecting wiring 30 so that at least the lower connecting wiring 32 contacts and is electrically connected to the reinforcing electrode 40 reduces the contact resistance between the connecting wiring 30 and the reinforcing electrode 40. As a result, electrical loss in the connecting wiring 30 can be reduced.
下面将参照图9A-11B,通过比较声波元件60的另一实施例和常规声波元件,来描述连接布线30的每单位长度电阻值的示例,图9A-11B示出了测量连接布线30的每单位长度电阻值的示例。连接布线结构和每个结构的构成材料类似于图4所示并且上面描述的结构。下连接布线32设置在压电体50的上表面上,加强电极40继而设置在下连接布线32的上表面上。An example of the resistance value per unit length of the connection wiring 30 will be described below by comparing another embodiment of the acoustic wave element 60 with a conventional acoustic wave element with reference to Figures 9A-11B. Figures 9A-11B illustrate an example of measuring the resistance value per unit length of the connection wiring 30. The connection wiring structure and the constituent materials of each structure are similar to those shown in Figure 4 and described above. The lower connection wiring 32 is provided on the upper surface of the piezoelectric body 50, and the reinforcing electrode 40 is in turn provided on the upper surface of the lower connection wiring 32.
图9A和9B分别示出其中加强电极40和下连接布线32之间没有接触的比较例的横截面视图和对应的平面图。图10A的横截面视图和图10B的对应平面图示出其中孔电极70具有8μm直径并且延伸穿过上连接布线31和下连接布线32的示例实施例。孔电极70被填充有加强电极40,加强电极40与下连接布线32的侧表面经由孔电极70彼此电连接。9A and 9B respectively illustrate a cross-sectional view and a corresponding plan view of a comparative example in which there is no contact between the reinforcing electrode 40 and the lower connection wiring 32. The cross-sectional view of FIG10A and the corresponding plan view of FIG10B illustrate an example embodiment in which the hole electrode 70 has a diameter of 8 μm and extends through the upper connection wiring 31 and the lower connection wiring 32. The hole electrode 70 is filled with the reinforcing electrode 40, and the side surface of the reinforcing electrode 40 and the lower connection wiring 32 are electrically connected to each other via the hole electrode 70.
图12示出连接布线30的每单位长度电阻值的测量结果。如图12所示,图10A-10B所示的示例实施例的连接布线30中的每单位长度电阻值低于图9A-9B所示的比较例的连接布线30中的每单位长度电阻值。下连接布线32和加强电极40可彼此接触和电连接甚至一小的面积,结果是可减小连接布线30中的电损耗。FIG12 shows the results of measuring the resistance per unit length of the connection wiring 30. As shown in FIG12, the resistance per unit length of the connection wiring 30 of the exemplary embodiment shown in FIG10A-10B is lower than the resistance per unit length of the connection wiring 30 of the comparative example shown in FIG9A-9B. Lower connection wiring 32 and reinforcing electrode 40 can be in contact with and electrically connected to each other even over a small area, resulting in reduced electrical loss in the connection wiring 30.
图11A和11B分别示出另一结构的横截面视图和平面图,在该结构中,孔电极70被填充有加强电极40并且仅设置在上连接布线31中以使得加强电极40接触并且电连接到下连接布线32的上表面。相对于图9A-9B的比较例,该结构也可减小连接布线30的每单位长度电阻值,并且也可实现减小连接布线30中的电损耗的效果。11A and 11B respectively illustrate a cross-sectional view and a plan view of another structure in which the hole electrode 70 is filled with the reinforcing electrode 40 and is provided only in the upper connection wiring 31 so that the reinforcing electrode 40 contacts and is electrically connected to the upper surface of the lower connection wiring 32. Compared to the comparative example of FIGS. 9A-9B , this structure can also reduce the resistance value per unit length of the connection wiring 30 and can also achieve the effect of reducing electrical loss in the connection wiring 30.
将理解,孔电极70的直径不限于上述8μm的示例,减小电损耗的效果可通过下连接布线32和加强电极40彼此接触和电连接来实现。It will be understood that the diameter of the hole electrode 70 is not limited to the above-mentioned example of 8 μm, and the effect of reducing electrical loss can be achieved by the lower connection wiring 32 and the reinforcing electrode 40 being in contact and electrically connected to each other.
下面描述使用声波元件60的实施例的梯型滤波器和使用常规声波元件6000的梯型滤波器的通过特性。Pass characteristics of the ladder-type filter of the embodiment using the acoustic wave element 60 and a ladder-type filter using the conventional acoustic wave element 6000 are described below.
图13是使用声波元件60的实施例的梯型滤波器400的一示例的电路图。如图13所示,根据一实施例的梯型滤波器400包括串联连接在输入端子201和输出端子202之间的第一串联谐振器301、第二串联谐振器302、第三串联谐振器303、以及第四串联谐振器304。第一并联谐振器305和第二并联谐振器306在一端连接在第一串联谐振器301和第二串联谐振器302之间,在另一端连接到地。第三并联谐振器307和第四并联谐振器308在一端连接在第三串联谐振器303和第四串联谐振器304之间,在另一端连接到地。谐振器301、302、303、304、305、306、307和308中的每个可包括声波元件60。FIG13 is a circuit diagram of an example of a ladder filter 400 using an embodiment of an acoustic wave element 60. As shown in FIG13, the ladder filter 400 according to one embodiment includes a first series resonator 301, a second series resonator 302, a third series resonator 303, and a fourth series resonator 304 connected in series between an input terminal 201 and an output terminal 202. A first parallel resonator 305 and a second parallel resonator 306 are connected between the first series resonator 301 and the second series resonator 302 at one end and connected to ground at the other end. A third parallel resonator 307 and a fourth parallel resonator 308 are connected between the third series resonator 303 and the fourth series resonator 304 at one end and connected to ground at the other end. Each of the resonators 301, 302, 303, 304, 305, 306, 307, and 308 may include an acoustic wave element 60.
根据一实施例,梯型滤波器400的谐振器的每个IDT电极的两端都在单个部位处设置有孔电极70,如图10B所示,而比较例制造成没有孔电极70。在图14中比较了每个梯型滤波器的通过特性。According to an embodiment, both ends of each IDT electrode of the resonator of the ladder filter 400 are provided with hole electrodes 70 at a single location, as shown in FIG10B, while the comparative example is manufactured without the hole electrodes 70. The transmission characteristics of each ladder filter are compared in FIG14.
图14示出梯型滤波器400中的通过特性的测量结果。如图14所示,相对于比较例,示例实施例的梯型滤波器可增强通带中的衰减量,并且可减小通带中的最小插入损耗。14 shows a measurement result of pass characteristics in the ladder-type filter 400. As shown in FIG14, the ladder-type filter of the example embodiment can enhance the attenuation amount in the passband and reduce the minimum insertion loss in the passband relative to the comparative example.
这里论述的声波元件的实施例在梯型滤波器结构和/或诸如蜂窝电话之类的各种电子设备中是有用的。Embodiments of the acoustic wave elements discussed herein are useful in ladder-type filter structures and/or various electronic devices such as cellular telephones.
上面已经描述了至少一实施例的若干方面,将理解,对本领域技术人员而言,各种替代、修改和改进是容易产生的。这样的替代、修改和改进旨在是本公开的一部分并且旨在落在本发明的范围内。因此,这里公开的方法和装置的实施例在应用时不限于前面描述或附图所示的部件构造和布置的细节。方法和装置能实施在其他实施例中并且以各种方式实践和执行。这里仅出于示范的目的提供了具体实施方式的示例,而无意成为限制。此外,这里使用的短语和术语是用于描述,而不应视为限制。这里使用的“包括”、“包含”、“具有”、“含有”、“涉及”及其变型意味着涵盖其后所列项和其等价物、以及附加项。对“或”的提及可解释为包括性的,从而用“或”描述的任何术语可表明描述项中的单个、超过一个、以及全部中的任何一种。还将理解,表明垂直方向、平行方向、深度方向等的术语用于描述性目的,以说明本发明的各方面。因此,这些术语不指定绝对方向,无意成为限制。前面的描述和附图仅是示例方式的,本发明的范围应根据对所附权利要求的适当理解及其等价物来确定。Having described several aspects of at least one embodiment above, it will be appreciated that various alternatives, modifications, and improvements will readily occur to those skilled in the art. Such alternatives, modifications, and improvements are intended to be part of this disclosure and are intended to fall within the scope of the present invention. Therefore, the embodiments of the methods and apparatus disclosed herein are not limited in their application to the details of construction and arrangement of components described above or illustrated in the accompanying drawings. The methods and apparatus can be implemented in other embodiments and practiced and carried out in various ways. Examples of specific implementations are provided herein for illustrative purposes only and are not intended to be limiting. Furthermore, the phrases and terms used herein are used for descriptive purposes and should not be construed as limiting. As used herein, "includes," "comprising," "having," "containing," "involving," and variations thereof are intended to encompass the items listed thereafter and their equivalents, as well as additional items. References to "or" are to be construed as inclusive, such that any term described with "or" may refer to any one, more than one, or all of the items described. It will also be understood that terms indicating perpendicular directions, parallel directions, depth directions, and the like are used for descriptive purposes to illustrate various aspects of the present invention. Therefore, these terms do not specify absolute directions and are not intended to be limiting. The foregoing description and drawings are by way of example only, and the scope of the present invention should be determined from a proper interpretation of the appended claims and their equivalents.
Claims (20)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-028059 | 2014-02-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| HK1229962A1 HK1229962A1 (en) | 2017-11-24 |
| HK1229962B true HK1229962B (en) | 2020-01-24 |
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