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HK1220288B - Sensor package with exposed sensor array and method of making same - Google Patents

Sensor package with exposed sensor array and method of making same Download PDF

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Publication number
HK1220288B
HK1220288B HK16108207.4A HK16108207A HK1220288B HK 1220288 B HK1220288 B HK 1220288B HK 16108207 A HK16108207 A HK 16108207A HK 1220288 B HK1220288 B HK 1220288B
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Hong Kong
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substrate
front surface
opening
detectors
sensor assembly
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HK16108207.4A
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Chinese (zh)
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HK1220288A1 (en
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Vage Oganesian
Zhenhua Lu
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Optiz, Inc.
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Priority claimed from US14/292,744 external-priority patent/US9142695B2/en
Application filed by Optiz, Inc. filed Critical Optiz, Inc.
Publication of HK1220288A1 publication Critical patent/HK1220288A1/en
Publication of HK1220288B publication Critical patent/HK1220288B/en

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Description

具有暴露的传感器阵列的传感器封装以及制造其的方法Sensor package with exposed sensor array and method of manufacturing the same

相关申请Related applications

本申请要求2013年6月3日提交的美国临时申请号61/830,563和2013年6月5日提交的美国临时申请号61/831,397的优先权,并且它们通过引用并入本文。This application claims priority to U.S. Provisional Application No. 61/830,563, filed June 3, 2013, and U.S. Provisional Application No. 61/831,397, filed June 5, 2013, which are incorporated herein by reference.

技术领域Technical Field

本发明涉及诸如图像传感器和化学传感器之类的微电子传感器设备的封装,并且更具体地涉及使传感器受保护、电气连接但又暴露的传感器封装。The present invention relates to packaging of microelectronic sensor devices such as image sensors and chemical sensors, and more particularly to sensor packaging that leaves the sensor protected, electrically connected, yet exposed.

背景技术Background Art

半导体设备的趋势是封装在较小封装(其保护芯片同时提供芯片外信令连接性)中的较小集成电路(IC)设备(还称为芯片)。一个示例是图像传感器,其是包括将入射光变换成电气信号的光电探测器的IC设备。The trend in semiconductor devices is toward smaller integrated circuit (IC) devices (also referred to as chips) packaged in smaller packages that protect the chip while providing off-chip signaling connectivity. An example is an image sensor, which is an IC device that includes a photodetector that converts incident light into an electrical signal.

图像传感器典型地包封在保护传感器以免受污染并且提供芯片外信令连接性的封装中。然而,一个问题在于用于包封光学传感器的透明衬底能够不利地影响穿过其并且到达传感器上的光(例如失真和光子损失)。另一类型的传感器是化学传感器,其探测诸如气体和化学品之类的物理物质。然而,为了操作,化学传感器不能从环境密封,而仍旧合期望的是封装这样的传感器以用于保护和芯片外信令连接性。Image sensors are typically encapsulated in a package that protects the sensor from contaminants and provides off-chip signaling connectivity. However, one issue is that the transparent substrate used to encapsulate the optical sensor can adversely affect the light that passes through it and reaches the sensor (e.g., distortion and photon loss). Another type of sensor is a chemical sensor, which detects physical substances such as gases and chemicals. However, chemical sensors cannot be sealed from the environment for operation, but it is still desirable to encapsulate such sensors for protection and off-chip signaling connectivity.

在美国专利出版物2005/0104186和2005/0051859以及美国专利6,627,864中公开常规传感器封装。每一个所公开的传感器封装包括传感器芯片、诸如硅构件之类的主衬底、PCB或挠性PCB、用于传感器区域的窗口开口以及气密地密封传感器区域的透明玻璃。可选地并且频繁地,密封区域填充有透明环氧化物以改进传感器管芯与主衬底之间的键合强度,这牺牲至少某些光子传感器的灵敏度。透明玻璃用来保护传感器区域以免受污染和潮湿同时还向封装提供附加衬底强度和刚性。传感器芯片通常通过倒装芯片或布线键合技术而安装到主衬底上。这允许传感器键合垫通过诸如球状栅格阵列(BGA)之类的互连与主衬底的表面上的多个金属迹线连接。金属迹线通常沉积在主衬底的表面上,其典型地由单层电路构成。然而,难以实现具有这些配置的减少的尺寸和防止组装过程期间的传感器区域污染。Conventional sensor packages are disclosed in U.S. Patent Publications 2005/0104186 and 2005/0051859, as well as U.S. Patent 6,627,864. Each of these disclosed sensor packages includes a sensor chip, a host substrate such as a silicon component, a PCB or flexible PCB, a window opening for the sensor area, and transparent glass that hermetically seals the sensor area. Optionally, and frequently, the sealing area is filled with a transparent epoxy to improve the bond strength between the sensor die and the host substrate, at the expense of at least some photon sensor sensitivity. The transparent glass protects the sensor area from contamination and moisture while also providing additional substrate strength and rigidity to the package. The sensor chip is typically mounted to the host substrate using flip-chip or wire bonding techniques. This allows the sensor bond pads to be connected to multiple metal traces on the surface of the host substrate via interconnects such as ball grid arrays (BGAs). The metal traces are typically deposited on the surface of the host substrate and typically consist of a single layer of circuitry. However, achieving reduced size with these configurations and preventing contamination of the sensor area during assembly are difficult.

存在针对改进的封装和封装技术的需要,其在具有芯片外信令连接性的情况下对传感器提供某种保护,而又使传感器暴露于所探测到的情况。还存在针对具有支持主衬底的改进的附连和连接性方案的需要。There is a need for improved packaging and packaging techniques that provide some protection to the sensor with off-chip signaling connectivity while exposing the sensor to the conditions being detected. There is also a need for improved attachment and connectivity schemes with a supporting host substrate.

发明内容Summary of the Invention

前述问题和需要通过所封装的传感器组装件解决,该传感器组装件包括具有相对的第一和第二表面的第一衬底以及各自在第一和第二表面之间延伸的多个传导元件。第二衬底包括相对的前表面和后表面、形成在前表面上或中的一个或多个探测器、以及形成在前表面处的电气耦合到一个或多个探测器的多个接触垫。第三衬底安装到前表面以在第三衬底与前表面之间限定腔室,其中第三衬底包括从腔室延伸通过第三衬底的第一开口。后表面安装到第一表面。多个布线各自在接触垫中的一个与传导元件中的一个之间延伸并且电气连接这二者。The aforementioned problems and needs are solved by a packaged sensor assembly, which includes a first substrate having first and second opposing surfaces and a plurality of conductive elements each extending between the first and second surfaces. The second substrate includes opposing front and rear surfaces, one or more detectors formed on or in the front surface, and a plurality of contact pads formed at the front surface that are electrically coupled to the one or more detectors. A third substrate is mounted to the front surface to define a chamber between the third substrate and the front surface, wherein the third substrate includes a first opening extending from the chamber through the third substrate. The rear surface is mounted to the first surface. A plurality of wirings each extend between one of the contact pads and one of the conductive elements and electrically connect the two.

所封装的传感器组装件包括:包括相对的前表面和后表面的第一衬底;形成在前表面上或中的一个或多个探测器;形成在前表面处的电气耦合到一个或多个探测器的多个接触垫;安装到前表面以在第二衬底与前表面之间限定腔室的第二衬底,其中第二衬底包括从腔室延伸通过第二衬底的第一开口;形成到第一衬底的前表面中的沟槽;以及各自从接触垫中的一个延伸并且到沟槽中的多个传导迹线。The packaged sensor assembly includes: a first substrate including opposing front and back surfaces; one or more detectors formed on or in the front surface; a plurality of contact pads formed at the front surface that are electrically coupled to the one or more detectors; a second substrate mounted to the front surface to define a chamber between the second substrate and the front surface, wherein the second substrate includes a first opening extending through the second substrate from the chamber; a groove formed into the front surface of the first substrate; and a plurality of conductive traces each extending from one of the contact pads and into the groove.

用于形成所封装的传感器组装件的方法包括:提供具有相对的第一与第二表面的第一衬底;形成各自在第一与第二表面之间延伸的多个传导元件;提供第二衬底(包括相对的前表面与后表面、形成在前表面上或中的一个或多个探测器、以及形成在前表面处的电气耦合到一个或多个探测器的多个接触垫);将第三衬底安装到前表面以在第三衬底与前表面之间限定腔室,其中第三衬底包括从腔室延伸通过第三衬底的第一开口;将后表面安装到第一表面;以及提供各自在接触垫中的一个与传导元件中的一个之间延伸并且电气连接这二者的多个布线。A method for forming a packaged sensor assembly includes providing a first substrate having opposing first and second surfaces; forming a plurality of conductive elements each extending between the first and second surfaces; providing a second substrate including opposing front and rear surfaces, one or more detectors formed on or in the front surface, and a plurality of contact pads formed at the front surface that are electrically coupled to the one or more detectors; mounting a third substrate to the front surface to define a chamber between the third substrate and the front surface, wherein the third substrate includes a first opening extending through the third substrate from the chamber; mounting the rear surface to the first surface; and providing a plurality of wirings each extending between one of the contact pads and one of the conductive elements and electrically connecting the two.

形成所封装的传感器组装件的方法包括:提供第一衬底(包括相对的前表面和后表面、形成在前表面上或中的一个或多个探测器、以及形成在前表面处的电气耦合到一个或多个探测器的多个接触垫);将第二衬底安装到前表面以在第二衬底与前表面之间限定腔室,其中第二衬底包括从腔室延伸通过第二衬底的第一开口;将沟槽形成到第一衬底的前表面中;以及形成各自从接触垫中的一个延伸并且到沟槽中的多个传导迹线。A method of forming a packaged sensor assembly includes providing a first substrate including opposing front and back surfaces, one or more detectors formed on or in the front surface, and a plurality of contact pads formed at the front surface that are electrically coupled to the one or more detectors; mounting a second substrate to the front surface to define a chamber between the second substrate and the front surface, wherein the second substrate includes a first opening extending through the second substrate from the chamber; forming a trench into the front surface of the first substrate; and forming a plurality of conductive traces each extending from one of the contact pads and into the trench.

本发明的其它目标和特征将通过审阅说明书、权利要求书和附图而变得显而易见。Other objects and features of the present invention will become apparent from a review of the specification, claims and drawings.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1A-1P是顺序地示出了在形成用于图像传感器的所封装的传感器组装件中的步骤的横截面侧视图。1A-1P are cross-sectional side views sequentially illustrating steps in forming a packaged sensor assembly for an image sensor.

图2是示出了安装到所封装的传感器组装件的透镜模块的横截面侧视图。2 is a cross-sectional side view showing the lens module mounted to a packaged sensor assembly.

图3是示出了用于化学传感器的所封装的传感器组装件的可替换实施例的横截面侧视图。3 is a cross-sectional side view illustrating an alternative embodiment of a packaged sensor assembly for a chemical sensor.

图4A-4F是顺序地示出了在形成所封装的传感器组装件的可替换实施例中的步骤的横截面侧视图。4A-4F are cross-sectional side views sequentially illustrating steps in an alternative embodiment of forming a packaged sensor assembly.

图5A-5B是示出了用于提供跨传感器的物理物质的流动的保护衬底中的多个开口的横截面侧视图。5A-5B are cross-sectional side views illustrating a plurality of openings in a protective substrate for providing flow of a physical substance across a sensor.

图6是示出了用于提供跨传感器的物理物质的非线性流动的腔室中的屏障结构和保护衬底中的多个开口的横截面侧视图。6 is a cross-sectional side view showing a barrier structure in a chamber and multiple openings in a protective substrate for providing non-linear flow of a physical substance across a sensor.

具体实施方式DETAILED DESCRIPTION

本发明是向传感器芯片提供保护、提供芯片外信令连接性、具有最小尺寸并且可以可靠地制备的封装解决方案。The present invention is a packaging solution that provides protection to the sensor chip, provides off-chip signaling connectivity, has a minimal size, and can be reliably manufactured.

图1A-1P图示了所封装的传感器组装件1的形成。该形成以包含形成在其上的多个传感器12的晶片10(衬底)开始,如在图1A中所示。出于图示的目的,将关于光学传感器描述所封装的传感器的形成,但是可以使用任何传感器(例如化学传感器等)。每一个图像传感器12包括多个光电探测器14、支持电路16和接触垫18。传感器12配置成探测和测量入射在每一个传感器12的有源区域17上的光。接触垫18电气连接到光电探测器14和/或其支持电路16以用于提供芯片外信令。每一个光电探测器14将光能量转换成电压信号。可以包括附加电路以放大电压和/或将其转换成数字数据。色彩过滤器和/或微透镜20可以安装在光电探测器14之上。这种类型的传感器在本领域中是公知的,并且在本文不被进一步描述。Figures 1A-1P illustrate the formation of a packaged sensor assembly 1. This formation begins with a wafer 10 (substrate) containing multiple sensors 12 formed thereon, as shown in Figure 1A. For illustrative purposes, the formation of the packaged sensor will be described with respect to optical sensors, but any sensor (e.g., chemical sensors, etc.) can be used. Each image sensor 12 includes multiple photodetectors 14, supporting circuitry 16, and contact pads 18. Sensors 12 are configured to detect and measure light incident on an active area 17 of each sensor 12. Contact pads 18 are electrically connected to the photodetectors 14 and/or their supporting circuitry 16 for providing off-chip signaling. Each photodetector 14 converts light energy into a voltage signal. Additional circuitry may be included to amplify the voltage and/or convert it into digital data. Color filters and/or microlenses 20 may be mounted above the photodetectors 14. Sensors of this type are well known in the art and are not further described herein.

接下来形成具有传感器窗口开口的保护衬底。保护衬底22可以是玻璃或者任何其它光学透明或半透明的刚性衬底。玻璃是优选的材料。厚度范围为50-1500μm的玻璃是优选的。传感器区域窗口开口24例如通过激光、喷砂、蚀刻或者任何其它适当的腔室形成方法而形成在保护衬底22中。形成在保护衬底22中的开口24在图1B中图示。开口24的侧壁可以是如所示出的竖直的,或者可以向内或向外逐渐变尖。优选地,开口24在尺寸上等于或小于它们将放置在其之上的底层有源区域17,如图1D和1F中分别图示的。可替换地,可以存在用于每一个有源区域17的多个开口24,如图1C和1E中所图示的。每一个有源区域将具有至少一个开口24。开口24可以是针对特定传感器功能性所相容的任何形状或尺寸。开口24将通过消除在传统图像传感器封装中找到的光学透明保护衬底所引起的失真和光子损失而使图像传感器获益。开口24还可以将传感器有源区域17暴露于环境,从而允许化学传感器探测器探测传感器所暴露于的诸如气体和化学品之类的物理物质。Next, a protective substrate is formed with a sensor window opening. The protective substrate 22 can be glass or any other optically transparent or translucent rigid substrate. Glass is the preferred material. Glass with a thickness in the range of 50-1500 μm is preferred. The sensor area window opening 24 is formed in the protective substrate 22, for example, by laser, sandblasting, etching, or any other suitable cavity formation method. The opening 24 formed in the protective substrate 22 is illustrated in Figure 1B. The sidewalls of the opening 24 can be vertical as shown, or can taper inwardly or outwardly. Preferably, the openings 24 are equal to or smaller in size than the underlying active area 17 on which they will be placed, as illustrated in Figures 1D and 1F, respectively. Alternatively, there can be multiple openings 24 for each active area 17, as illustrated in Figures 1C and 1E. Each active area will have at least one opening 24. The openings 24 can be any shape or size compatible with the particular sensor functionality. The opening 24 will benefit the image sensor by eliminating the distortion and photon loss caused by the optically transparent protective substrate found in traditional image sensor packages. The opening 24 can also expose the sensor active area 17 to the environment, thereby allowing the chemical sensor detector to detect physical substances such as gases and chemicals to which the sensor is exposed.

将间隔物材料26的可选层沉积在保护衬底22上,这要么在形成开口24之前要么在形成开口24之后。间隔物材料26可以是聚合物、环氧化物和/或(一个或多个)任何其它适当的材料。沉积可以通过印辊、喷涂、丝网印刷或者(一个或多个)任何其它适当的方法而实现。所沉积的材料的厚度可以在5-500μm的范围中。间隔物材料26可以对准到如图1G中所示的开口24的边缘,与如图1H中所示的开口24的边缘间隔开,或者为如图1I中所示的二者的组合。优选地,间隔物材料26定位成避免与有源区域17和衬底10(在其上安装间隔物材料26)的接触垫18接触(例如可以定位在有源区域17与其相应的接触垫18之间)。An optional layer of spacer material 26 is deposited on protective substrate 22, either before or after forming openings 24. Spacer material 26 can be a polymer, an epoxy, and/or any other suitable material(s). Deposition can be achieved by roller printing, spraying, screen printing, or any other suitable method(s). The thickness of the deposited material can be in the range of 5-500 μm. Spacer material 26 can be aligned to the edge of opening 24 as shown in FIG. 1G , spaced from the edge of opening 24 as shown in FIG. 1H , or a combination of the two as shown in FIG. 1I . Preferably, spacer material 26 is positioned to avoid contact with active area 17 and contact pads 18 of substrate 10 (on which spacer material 26 is mounted) (e.g., it can be positioned between active area 17 and its corresponding contact pad 18).

保护结构(衬底22和间隔物材料26)使用键合剂被键合到衬底10的有源侧。键合剂可以环氧化物,该环氧化物通过印辊沉积并且然后热固化或者本领域中公知的任何其它适当的键合方法。保护带28放置在保护衬底22之上,从而形成用于每一个图像传感器12的气密密封腔室30。腔室30的高度优选地在5-500μm的范围中。腔室30可以填充有气体、液体或者通过创建真空而排出所有气体。衬底10可以可选地通过从其背侧移除材料而薄化。在硅衬底10的情况下,硅薄化可以通过机械碾磨、化学机械抛光(CMP)、湿法蚀刻、大气下游等离子体(ADP)、干法化学蚀刻(DCE)、或者前述工艺的组合、或者任何另外的(一个或多个)适当硅薄化方法而完成。薄化的衬底10的厚度在100-2000μm的范围中。所得结构在图1J中示出。The protective structure (substrate 22 and spacer material 26) is bonded to the active side of substrate 10 using a bonding agent. The bonding agent can be an epoxy deposited by roller printing and then thermally cured, or any other suitable bonding method known in the art. A protective tape 28 is placed over protective substrate 22, forming a hermetically sealed chamber 30 for each image sensor 12. The height of chamber 30 is preferably in the range of 5-500 μm. Chamber 30 can be filled with a gas, a liquid, or evacuated by creating a vacuum. Substrate 10 can optionally be thinned by removing material from its backside. In the case of a silicon substrate 10, silicon thinning can be accomplished by mechanical grinding, chemical mechanical polishing (CMP), wet etching, atmospheric downstream plasma (ADP), dry chemical etching (DCE), a combination of the aforementioned processes, or any other suitable silicon thinning method(s). The thickness of the thinned substrate 10 is in the range of 100-2000 μm. The resulting structure is shown in FIG1J.

传感器12之间并且在接触垫18之上的保护衬底22的部分可以使用激光切割设备、机械锯切、前述工艺的组合、或者任何其它适当的(一个或多个)玻璃切割方法而移除。激光切割是优选的切割方法。该工艺使每一个保护腔室30与用于其它传感器12的其它保护腔室分离,由此实现保护腔室单分。该步骤还暴露传感器垫18。衬底10然后被单分/切分以分离每一个传感器12及其相应的封装。晶片级切分/单分可以利用机械刀片切分设备、激光切割或任何其它适当的工艺而完成。所得结构在图1K中示出。The portion of the protective substrate 22 between the sensors 12 and above the contact pads 18 can be removed using laser cutting equipment, mechanical sawing, a combination of the aforementioned processes, or any other suitable glass cutting method(s). Laser cutting is the preferred cutting method. This process separates each protective chamber 30 from other protective chambers for other sensors 12, thereby achieving protection chamber singulation. This step also exposes the sensor pads 18. The substrate 10 is then singulated/diced to separate each sensor 12 and its corresponding package. Wafer-level dicing/singling can be accomplished using mechanical blade dicing equipment, laser cutting, or any other suitable process. The resulting structure is shown in FIG1K .

通过首先提供主衬底36来形成主衬底组装件34,主衬底36可以是有机挠性PCB、FR4 PCB、硅(刚性)、玻璃、陶瓷或者任何其它类型的封装衬底。VIA(竖直互连接入)开口38可以经由机械钻孔、激光、干法蚀刻、湿法蚀刻或者本领域中公知的任何另外的(一个或多个)适当VIA开口形成方法而通过主衬底36制成。优选地,激光被用于形成VIA开口38。VIA开口壁可以是锥形以形成漏斗形状,或者VIA的顶部和底部二者具有相同尺度以形成圆柱形状。所得结构在图1L中示出。The main substrate assembly 34 is formed by first providing a main substrate 36, which can be an organic flexible PCB, an FR4 PCB, silicon (rigid), glass, ceramic, or any other type of packaging substrate. VIA (vertical interconnect access) openings 38 can be made through the main substrate 36 via mechanical drilling, laser, dry etching, wet etching, or any other suitable VIA opening formation method known in the art. Preferably, a laser is used to form the VIA openings 38. The VIA opening walls can be tapered to form a funnel shape, or the top and bottom of the VIA can have the same dimensions to form a cylindrical shape. The resulting structure is shown in FIG1L .

电介质材料层40形成在主衬底36的所有表面(包括VIA开口38的侧壁)之上。如果主衬底36由诸如传导硅之类的传导材料制成,则层40是合期望的。电介质材料层40可以是通过物理气相沉积(PVD)沉积的二氧化硅。如果主衬底36由诸如挠性PCB或FR4树脂之类的非传导有机材料制成,则可以省略电介质层40。导电材料42然后形成在主衬底36的所有表面之上(包括部分或完全填充VIA开口38)。导电材料42可以是铜、铝、传导聚合物或者(一个或多个)任何其它适当的导电材料。导电材料42可以通过物理气相沉积(PVD)、化学气相沉积(CVD)、电镀或者(一个或多个)任何其它适当的沉积方法来沉积。VIA开口38的侧壁可以涂敷有传导材料42,或者VIA开口38可以完全填充有传导材料42,如图1M中所示。A dielectric material layer 40 is formed over all surfaces of the main substrate 36, including the sidewalls of the VIA openings 38. Layer 40 is desirable if the main substrate 36 is made of a conductive material, such as conductive silicon. Dielectric material layer 40 may be silicon dioxide deposited by physical vapor deposition (PVD). If the main substrate 36 is made of a non-conductive organic material, such as a flexible PCB or FR4 resin, dielectric layer 40 may be omitted. Conductive material 42 is then formed over all surfaces of the main substrate 36, including partially or completely filling the VIA openings 38. Conductive material 42 may be copper, aluminum, a conductive polymer, or any other suitable conductive material(s). Conductive material 42 may be deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroplating, or any other suitable deposition method(s). The sidewalls of the VIA openings 38 may be coated with conductive material 42, or the VIA openings 38 may be completely filled with conductive material 42, as shown in FIG. 1M .

光刻胶层44沉积在主衬底36的顶表面和底表面二者之上。光刻胶沉积方法可以是喷涂或者任何另外的(一个或多个)适当沉积方法。光刻胶44使用本领域中公知的适当光刻工艺被曝光和蚀刻,从而仅在最终将形成迹线的路径和VIA开口38之上留下光刻胶44。执行传导材料蚀刻以移除传导层42的所暴露的部分(即不在剩余的光刻胶44下面的那些部分)。例如,引线、接触件、重路由接触件和迹线可以通过这种蚀刻形成,其可以使用本领域中公知的干法或湿法蚀刻方法。所得结构在图1N中示出。A photoresist layer 44 is deposited on both the top and bottom surfaces of the main substrate 36. The photoresist deposition method can be spray coating or any other suitable deposition method(s). The photoresist 44 is exposed and etched using a suitable photolithography process known in the art, leaving photoresist 44 only above the paths and VIA openings 38 that will eventually form the traces. A conductive material etch is performed to remove the exposed portions of the conductive layer 42 (i.e., those portions not underneath the remaining photoresist 44). For example, leads, contacts, rerouting contacts, and traces can be formed by this etching, which can use dry or wet etching methods known in the art. The resulting structure is shown in FIG1N.

使用硫磺酸、丙酮或者适当的任何其它光刻胶脱模方法来对光刻胶进行脱模。可以在传导材料42上执行可选的电镀工艺(例如Ni/Pd/Au)。互连46形成在主衬底36的底侧上的VIA开口38之上的传导材料42上。互连可以是球栅格阵列(BGA)、岸面栅格阵列(LGA)、凸起、铜柱、或者任何其它适当的互连方法。球栅格阵列是互连的优选方法之一并且其可以通过丝网印刷再接着回流工艺来沉积。以上描述的单分的衬底10(具有传感器12)然后通过例如将粘合剂沉积在衬底10或主衬底36或二者上并且拾取衬底10/将衬底10放置到主衬底36上再接着适当的固化工艺而使用适当粘合剂48附连到主衬底。添加接触垫18与VIA开口38中的传导材料42之间的电气互连,其优选地是本领域中公知的键合布线50。所得结构在图1O中示出。The photoresist is stripped using sulfuric acid, acetone, or any other suitable photoresist stripping method. An optional electroplating process (e.g., Ni/Pd/Au) may be performed on the conductive material 42. Interconnects 46 are formed on the conductive material 42 above the VIA openings 38 on the bottom side of the main substrate 36. The interconnects may be ball grid arrays (BGAs), land grid arrays (LGAs), bumps, copper pillars, or any other suitable interconnect method. BGAs are a preferred interconnect method and can be deposited by screen printing followed by a reflow process. The singulated substrates 10 (with sensors 12) described above are then attached to the main substrate using a suitable adhesive 48, for example, by depositing the adhesive on the substrate 10, the main substrate 36, or both, and picking up/placing the substrate 10 onto the main substrate 36, followed by a suitable curing process. Electrical interconnects are added between the contact pads 18 and the conductive material 42 in the VIA openings 38, preferably bond wires 50 as is known in the art. The resulting structure is shown in FIG10 .

将外模(overmold)材料52分配在主衬底36以及其间的所安装的传感器12上。外模材料52可以是环氧化物、树脂或者本领域中公知的(一个或多个)任何其它外模材料。固化的外模材料52的上表面优选地低于保护衬底22的上表面并且高于布线键合接触件的上表面。主衬底36然后沿着所安装的传感器12之间的划线单分。封装的切分/单分可以利用机械刀片切分设备、激光切割或者任何其它适当的工艺完成。最终传感器封装经由互连46安装到第二主衬底54。第二主衬底54可以是挠性PCB、刚性PCB或者具有接触垫和电气互连的任何其它适用结构。保护带28然后被移除,由此将传感器12的有源区域17暴露于环境。最后的所封装的传感器组装件1在图1P中示出。An overmold material 52 is dispensed over the primary substrate 36 and the mounted sensors 12 therebetween. The overmold material 52 may be an epoxy, a resin, or any other overmold material(s) known in the art. The upper surface of the cured overmold material 52 is preferably lower than the upper surface of the protective substrate 22 and higher than the upper surface of the wiring bond contacts. The primary substrate 36 is then singulated along the scribe lines between the mounted sensors 12. The dicing/singling of the package may be accomplished using mechanical blade dicing equipment, laser cutting, or any other suitable process. The final sensor package is mounted to a second primary substrate 54 via interconnects 46. The second primary substrate 54 may be a flexible PCB, a rigid PCB, or any other suitable structure having contact pads and electrical interconnects. The protective tape 28 is then removed, thereby exposing the active area 17 of the sensor 12 to the environment. The final packaged sensor assembly 1 is shown in FIG. 1P .

在最后的结构中,通过至多仅部分地在衬底10之上延伸的保护衬底来保护传感器12,使得传感器12被暴露于环境。特别地,入射在结构上的光可以直接传递到传感器12而不会穿过任何透明保护衬底。VIA开口38中的传导材料42形成直通电气接触件或传导元件,其通过衬底36并且在布线50与互连46之间延伸。外模材料52保护布线50连接。In the final structure, sensor 12 is protected by a protective substrate that extends only partially over substrate 10, leaving sensor 12 exposed to the environment. In particular, light incident on the structure can pass directly to sensor 12 without passing through any transparent protective substrate. Conductive material 42 in VIA opening 38 forms a through-contact electrical contact or conductive element that passes through substrate 36 and extends between wiring 50 and interconnect 46. Overmold material 52 protects the wiring 50 connection.

图2图示了可以安装到图1P的结构的透镜模块60。透镜模块60包括外壳62,在该外壳62中安装一个或多个透镜64以将传入光聚焦到图像传感器12上而不必穿过任何保护衬底。Figure 2 illustrates a lens module 60 that may be mounted to the structure of Figure IP. The lens module 60 includes a housing 62 in which one or more lenses 64 are mounted to focus incoming light onto the image sensor 12 without having to pass through any protective substrate.

图3图示了具有化学传感器70而不是图像传感器12的所封装的传感器组装件1。化学传感器70包括形成在衬底10中或上的一个或多个化学探测器72以用于探测通过开口24进入到腔室30中的某些化学品或颗粒的存在。化学探测器72响应于所探测的化学品或颗粒而生成信号,并且将那些信号提供给接触垫18。这种类型的化学传感器在本领域中是公知的,并且在本文不进一步描述。3 illustrates a packaged sensor assembly 1 having a chemical sensor 70 instead of an image sensor 12. The chemical sensor 70 includes one or more chemical detectors 72 formed in or on the substrate 10 for detecting the presence of certain chemicals or particles that enter the chamber 30 through the opening 24. The chemical detectors 72 generate signals in response to the detected chemicals or particles and provide those signals to the contact pads 18. Chemical sensors of this type are well known in the art and are not described further herein.

图4A-4F图示了所封装的传感器组装件的可替换实施例的形成。该形成以图1K中所示出的结构开始,但是在切分/单分之前。光刻胶层44沉积在结构之上。光刻胶沉积可以通过喷涂或者任何另外的(一个或多个)适当沉积方法而实现。光刻胶74使用本领域中公知的适当光刻工艺而曝光和选择性地蚀刻。固化/硬化的光刻胶74使传感器12之间的衬底的部分被暴露。蚀刻衬底10的所暴露的部分(例如通过各向异性干法蚀刻)以将沟槽形成到衬底10的顶表面中。可以使用蚀刻剂CF4、SF6、NF3、Cl2、CCl2F2或者任何其它适当的蚀刻剂。沟槽76的优选深度在衬底10厚度的5%到50%的范围中。所得结构在图4A中示出。Figures 4A-4F illustrate the formation of an alternative embodiment of a packaged sensor assembly. This formation begins with the structure shown in Figure 1K, but before dicing/singulation. A photoresist layer 44 is deposited over the structure. Photoresist deposition can be achieved by spray coating or any other suitable deposition method(s). Photoresist 74 is exposed and selectively etched using a suitable photolithography process known in the art. Cured/hardened photoresist 74 exposes portions of the substrate between sensors 12. The exposed portions of substrate 10 are etched (e.g., by anisotropic dry etching) to form trenches in the top surface of substrate 10. Etches such as CF4, SF6, NF3, Cl2, CCl2F2, or any other suitable etchant can be used. The preferred depth of trench 76 is in the range of 5% to 50% of the thickness of substrate 10. The resulting structure is shown in Figure 4A.

使用丙酮或者本领域中公知的任何其它干法等离子体或湿法光刻胶脱模方法来对光刻胶74进行脱模。在结构之上沉积绝缘材料的钝化层78,诸如二氧化硅或者氮化硅。优选地,钝化层78由二氧化硅制成并且至少为0.5μm。可以使用物理气相沉积(PVD)、PECVD或者任何另外的(一个或多个)沉积方法来执行二氧化硅沉积。将光刻胶层80沉积在钝化层78之上。光刻胶80使用本领域中公知的适当光刻工艺被曝光和选择性地被蚀刻以移除接触垫18之上并且沿着间隔物材料26、保护衬底22和带28以及它们之上的光刻胶的那些部分(由此暴露这些区域之上的钝化层78的部分)。通过例如等离子体蚀刻移除钝化层78的所暴露的部分以暴露接触垫18、间隔物材料26、保护衬底22和带28。如果钝化层78是二氧化硅,则可以使用蚀刻剂CF4、SF6、NF3或者任何其它适当的蚀刻剂。如果钝化层78是氮化硅,则可以使用蚀刻剂CF4、SF6、NF3、CHF3或者任何其它适当的蚀刻剂。所得结构在图4B中示出。Photoresist 74 is stripped using acetone or any other dry plasma or wet photoresist stripping method known in the art. A passivation layer 78 of an insulating material, such as silicon dioxide or silicon nitride, is deposited over the structure. Preferably, passivation layer 78 is made of silicon dioxide and is at least 0.5 μm thick. Silicon dioxide deposition can be performed using physical vapor deposition (PVD), PECVD, or any other deposition method(s). A photoresist layer 80 is deposited over passivation layer 78. Photoresist 80 is exposed and selectively etched using a suitable photolithography process known in the art to remove those portions of the photoresist above contact pads 18 and along and above spacer material 26, protective substrate 22, and strap 28 (thereby exposing portions of passivation layer 78 above these areas). The exposed portions of passivation layer 78 are removed, for example, by plasma etching, to expose contact pads 18, spacer material 26, protective substrate 22, and strap 28. If the passivation layer 78 is silicon dioxide, then etchants CF4, SF6, NF3, or any other suitable etchant may be used. If the passivation layer 78 is silicon nitride, then etchants CF4, SF6, NF3, CHF3, or any other suitable etchant may be used. The resulting structure is shown in FIG4B .

在移除光刻胶80之后,在结构之上沉积导电材料82。导电材料82可以是铜、铝、传导聚合物或者(一个或多个)任何其它适当的导电材料。导电材料可以通过物理气相沉积(PVD)、化学气相沉积(CVD)、电镀或者(一个或多个)任何其它适当的沉积方法而沉积。优选地,导电材料82是铝并且通过PVD沉积。光刻胶层84沉积在结构之上。光刻胶84使用适当的光刻工艺被曝光和被蚀刻以形成接触垫18之上和沟槽76中的导电层82之上的掩模。光刻胶84在带28、保护层22、间隔物材料26以及可选地衬底10将在沟槽76中切分的地方之上移除,从而可选地暴露那些区域处的导电层82。导电层82的所暴露的部分例如使用干法或湿法蚀刻方法而移除。导电层82的剩余部分形成多个离散迹线(引线),每一个从接触垫18中的一个向下延伸到沟槽76中的一个的底部。用于湿法蚀刻的蚀刻剂可以是磷酸(H3PO4)、醋酸、硝酸(HNO3)或者(一个或多个)任何其它适当的蚀刻剂。用于干法蚀刻的蚀刻剂可以是Cl2、CCl4、SiCl4、BCl3或者(一个或多个)任何其它适当的蚀刻剂。干法蚀刻是用于该引线形成的优选方法。可选地,导电材料82可以保留在保护衬底的侧壁上。所得结构在图4C中示出。After removing photoresist 80, a conductive material 82 is deposited over the structure. Conductive material 82 can be copper, aluminum, a conductive polymer, or any other suitable conductive material(s). The conductive material can be deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroplating, or any other suitable deposition method(s). Preferably, conductive material 82 is aluminum and is deposited by PVD. A photoresist layer 84 is deposited over the structure. Photoresist 84 is exposed and etched using a suitable photolithography process to form a mask over conductive layer 82 over contact pads 18 and in trenches 76. Photoresist 84 is removed over strips 28, protective layer 22, spacer material 26, and optionally where substrate 10 will be cut in trenches 76, thereby optionally exposing conductive layer 82 in those areas. The exposed portions of conductive layer 82 are removed, for example, using a dry or wet etching process. The remaining portions of conductive layer 82 form a plurality of discrete traces (leads), each extending from one of contact pads 18 down to the bottom of one of trenches 76. The etchant used for wet etching can be phosphoric acid (H3PO4), acetic acid, nitric acid (HNO3), or any other suitable etchant(s). The etchant used for dry etching can be Cl2, CCl4, SiCl4, BCl3, or any other suitable etchant(s). Dry etching is the preferred method for forming the lead. Optionally, conductive material 82 can remain on the sidewalls of the protective substrate. The resulting structure is shown in FIG4C .

然后移除剩余的光刻胶84。可选地,可以在引线(传导层82)上执行电镀工艺(例如Ni/Pd/Au)。将可选的包封剂层86沉积在传导引线结构之上。包封剂层86可以是聚酰亚胺、陶瓷、聚合物、聚合物合成物、聚对二甲苯、金属氧化物、二氧化硅、氮化硅、环氧化物、硅酮、瓷、氮化物、玻璃、离子晶体、树脂、以及前述材料的组合或者(一个或多个)任何其它适当的电介质材料。包封剂层86在厚度上优选地为0.1到2μm,并且优选的材料是诸如焊料掩模之类的液体光刻聚合物,其可以通过喷涂沉积。执行光刻工艺,其中移除所显影/固化的包封84,除引线之上的之外。重路由的接触件88可以通过形成沟槽76的底部处的包封层86中的开口而创建。可选地,包封材料可以保留在保护衬底22的侧壁上和/或带28上。所得结构在图4D中示出。The remaining photoresist 84 is then removed. Optionally, an electroplating process (e.g., Ni/Pd/Au) can be performed on the leads (conductive layer 82). An optional encapsulant layer 86 is deposited over the conductive lead structures. Encapsulant layer 86 can be made of polyimide, ceramic, polymer, polymer composite, parylene, metal oxide, silicon dioxide, silicon nitride, epoxy, silicone, porcelain, nitride, glass, ionic crystal, resin, combinations of the foregoing, or any other suitable dielectric material(s). Encapsulant layer 86 is preferably 0.1 to 2 μm thick, and a preferred material is a liquid photolithographic polymer such as solder mask, which can be deposited by spray coating. A photolithography process is performed, in which the developed/cured encapsulant 84 is removed, except for that over the leads. Rerouting contacts 88 can be created by forming openings in encapsulant layer 86 at the bottom of trench 76. Optionally, encapsulant material can remain on the sidewalls of protective substrate 22 and/or on tape 28. The resulting structure is shown in FIG4D .

组件的晶片级切分/单分可以利用机械刀片切分设备、激光切割或者任何其它适当的工艺优选地在沟槽76的底部完成。互连90可以形成在重路由的接触垫上或者挠性PCB上。互连90可以是BGA、LGA、柱形凸起、所电镀的凸起、粘合凸起、聚合物凸起、铜柱、微杆或者(一个或多个)任何其它适当的互连方法。优选地,互连90由粘合凸起制成,其是(一个或多个)传导材料和(一个或多个)粘合材料的合成物。(一个或多个)传导材料可以是焊料、铜、银、铝、金、前述材料的组合或者(一个或多个)任何其它适当的传导材料。(一个或多个)粘合材料可以是清漆、树脂和前述材料的组合或者(一个或多个)任何其它适当的粘合材料。传导粘合剂可以通过风动分配枪或(一个或多个)任何其它适当的分配方法沉积并且然后通过热量、UV或者(一个或多个)任何其它适当的固化方法固化,由此形成凸起。Wafer-level dicing/singulation of the components can be performed using mechanical blade dicing equipment, laser cutting, or any other suitable process, preferably at the bottom of trench 76. Interconnects 90 can be formed on rerouted contact pads or on a flexible PCB. Interconnects 90 can be BGAs, LGAs, stud bumps, plated bumps, adhesive bumps, polymer bumps, copper pillars, micro-rods, or any other suitable interconnect method(s). Preferably, interconnects 90 are made of adhesive bumps, which are a composite of conductive material(s) and adhesive material(s). The conductive material(s) can be solder, copper, silver, aluminum, gold, a combination of the aforementioned materials, or any other suitable conductive material(s). The adhesive material(s) can be varnish, resin, a combination of the aforementioned materials, or any other suitable adhesive material(s). The conductive adhesive can be deposited using an air-powered dispensing gun or any other suitable dispensing method(s) and then cured using heat, UV, or any other suitable curing method(s), thereby forming the bumps.

挠性PCB可以安装在衬底10的所有侧面、三个侧面、两个侧面或单个侧面上。例如,两个挠性PCB 92可以键合到衬底10的相对侧面。可替换地,可以使用具有窗口开口的单个挠性PCB 92,并且延伸离开衬底10的一个、两个、三个或所有侧面。挠性PCB 92可以是具有一个或多个电路层93和连接到其的接触垫18a的任何刚性或柔性衬底。互连90电气连接在接触垫18a与传导迹线82之间。传感器封装放置在预铸型的模具内,并且然后将所选的外模化合物94注入到模具中。外模材料94可以是环氧化物、聚合物、树脂或者本领域中公知的(一个或多个)任何其它外模材料。固化的外模材料的顶表面可以与保护衬底22的顶表面一样高,但是优选地不延伸成任何更高。固化的外模材料94优选地不延伸超出衬底10。保护带28然后被移除,由此将传感器有源区域暴露于环境。所得结构在图4E中示出。如上文描述的可选透镜模块60可以附连在结构的顶部上,如图4F中所示。The flexible PCB can be mounted on all sides, three sides, two sides, or a single side of substrate 10. For example, two flexible PCBs 92 can be bonded to opposite sides of substrate 10. Alternatively, a single flexible PCB 92 with a window opening can be used, extending away from one, two, three, or all sides of substrate 10. Flexible PCB 92 can be any rigid or flexible substrate having one or more circuit layers 93 and contact pads 18a connected thereto. Interconnects 90 are electrically connected between contact pads 18a and conductive traces 82. The sensor package is placed within a pre-molded mold, and a selected overmold compound 94 is then injected into the mold. Overmold material 94 can be an epoxy, polymer, resin, or any other overmold material(s) known in the art. The top surface of the cured overmold material can be as high as the top surface of protective substrate 22, but preferably does not extend any higher. Cured overmold material 94 preferably does not extend beyond substrate 10. Protective tape 28 is then removed, exposing the sensor active area to the environment. The resulting structure is shown in Figure 4E.An optional lens module 60 as described above may be attached on top of the structure, as shown in Figure 4F.

以上所述结构提供比已知封装更为紧凑的覆晶薄膜(COF)封装。较薄的结构可以通过创建衬底管芯10的边缘上的台阶结构而获得,然后在经由金属迹线连接到顶表面接触垫18的第二台阶表面上形成多个金属迹线和重路由接触垫。柔性线缆和/或PCB键合到该第二台阶表面。该结构通过将其直接键合到传感器管芯10而不是将其安装在主衬底上而降低了保护衬底22的高度,由此减小封装厚度。The structure described above provides a more compact chip-on-film (COF) package than known packages. The thinner structure can be achieved by creating a stepped structure on the edge of substrate die 10, then forming multiple metal traces and rerouting contact pads on a second stepped surface that connects to top surface contact pads 18 via metal traces. A flexible cable and/or PCB is bonded to this second stepped surface. This structure reduces the height of protective substrate 22 by bonding it directly to sensor die 10 rather than mounting it on a host substrate, thereby reducing package thickness.

以上所述结构还通过封装结构增加图像传感器的灵敏度。特别地,较大的光子灵敏度可以通过简单地不妨碍光路径而获得。通过创建保护衬底22中的开口24并且不使用传感器区域腔室处的任何透明未充满,更多的光子能够以更大的准确度到达有源区域。常规设备依赖于保护衬底和透明未充满以通过气密地密封它来保护传感器区域。然而,可以利用透镜模块60实现相同气密密封。最后地,通过使用外模材料52/94围封整个键合区域而不是仅仅应用作为粘合剂/未充满的键合表面周围的模具实现更好的结构整体性。The structure described above also increases the sensitivity of the image sensor through the packaging structure. In particular, greater photon sensitivity can be achieved by simply not obstructing the light path. By creating openings 24 in the protective substrate 22 and not using any transparent underfills at the sensor area cavity, more photons can reach the active area with greater accuracy. Conventional devices rely on a protective substrate and transparent underfills to protect the sensor area by hermetically sealing it. However, the same hermetic seal can be achieved using the lens module 60. Finally, better structural integrity is achieved by enclosing the entire bonding area using overmold material 52/94 rather than simply applying a mold around the bonding surface as an adhesive/underfill.

对于化学传感器实施例,多个开口24可以用于促进物理物质通过腔室30以及在传感器的有源区域之上的流动。输入和输出附连96和98连接到保护衬底22上的开口24,由此诸如气体或液体之类的物理物质流过所封装的结构,如通过图5A和5B中的箭头所指示的。可选的屏障结构100可以被包括在腔室30中以在非线性路径中引导物理物质通过腔室,如图6中所示。For chemical sensor embodiments, multiple openings 24 can be used to facilitate the flow of physical species through chamber 30 and over the active area of the sensor. Input and output attachments 96 and 98 connect to openings 24 on protective substrate 22, whereby physical species such as gas or liquid flow through the packaged structure, as indicated by the arrows in Figures 5A and 5B. An optional barrier structure 100 can be included in chamber 30 to guide the physical species through the chamber in a nonlinear path, as shown in Figure 6.

要理解到,本发明不限于以上描述的和本文图示的(一个或多个)实施例,而是涵盖落在随附权利要求的范围内的任何和全部变型。例如,本文中对本发明的引用不意图限制任何权利要求或权利要求术语的范围,而是代替地仅仅引用可以由一个或多个权利要求覆盖的一个或多个特征。以上描述的材料、工艺和数值示例仅为示例性的,并且不应当视为限制权利要求。另外,如从权利要求和说明书显而易见的,并不需要以所图示或要求保护的确切次序执行所有方法步骤,而是以允许所封装传感器组装件1的恰当形成的任何次序。最后地,材料的单个层可以形成为这样或类似材料的多个层,并且反之亦然。It is to be understood that the present invention is not limited to the embodiment(s) described above and illustrated herein, but encompasses any and all variations that fall within the scope of the appended claims. For example, references herein to the invention are not intended to limit the scope of any claim or claim term, but instead merely reference one or more features that may be covered by one or more claims. The materials, processes, and numerical examples described above are merely exemplary and should not be construed as limiting the claims. Additionally, as will be apparent from the claims and description, all method steps need not be performed in the exact order illustrated or claimed, but rather in any order that allows for proper formation of the packaged sensor assembly 1. Finally, a single layer of material may be formed as multiple layers of such or similar material, and vice versa.

应当指出的是,如本文所使用的,术语“在...之上”和“在...上”二者非排他性地包括“直接在...上”(没有设置在其之间的中间材料、元件或空间)以及“间接在...上”(具有设置在其之间的中间材料、元件或空间)。同样地,术语“安装到...”包括“直接安装到...”(没有设置在其之间的中间材料、元件或空间)以及“间接安装到...”(具有设置在其之间的中间材料、元件或空间),并且“电气耦合”包括“直接电气耦合到...”(没有将元件电气连接在一起的之间的中间材料或元件)和“间接电气耦合到...”(具有将元件电气连接在一起的之间的中间材料或元件)。例如,“在衬底之上”形成元件可以包括在没有其之间的中间材料/元件的情况下直接在衬底上形成元件,以及在具有其之间的中间材料/元件的情况下间接在衬底上形成元件。It should be noted that, as used herein, the terms “on” and “on” both non-exclusively include “directly on” (without intervening materials, elements, or spaces disposed therebetween) and “indirectly on” (with intervening materials, elements, or spaces disposed therebetween). Similarly, the term “mounted to” includes “directly mounted to” (without intervening materials, elements, or spaces disposed therebetween) and “indirectly mounted to” (with intervening materials, elements, or spaces disposed therebetween), and “electrically coupled to” includes “directly electrically coupled to” (without intervening materials or elements electrically connecting the elements together) and “indirectly electrically coupled to” (with intervening materials or elements electrically connecting the elements together). For example, forming an element “on a substrate” may include forming the element directly on the substrate without intervening materials/elements therebetween, as well as forming the element indirectly on the substrate with intervening materials/elements therebetween.

Claims (34)

1.一种封装的传感器组装件,包括:1. A packaged sensor assembly, comprising: 第一衬底,具有相对的第一与第二表面和各自在第一与第二表面之间延伸的多个传导元件;第二衬底,包括:A first substrate has opposing first and second surfaces and a plurality of conductive elements extending between the first and second surfaces, respectively; a second substrate includes: 相对的前表面与后表面,The front and rear surfaces are opposite to each other. 形成在前表面中或上的一个或多个探测器,One or more detectors formed in or on the front surface. 形成在前表面处的电气耦合到一个或多个探测器的多个接触垫,Multiple contact pads formed on the front surface are electrically coupled to one or more detectors. 通过直接设置在第三衬底上的间隔物材料和设置在所述间隔物材料与所述前表面之间的环氧化物键合剂,将第三衬底安装到前表面,以在第三衬底与前表面之间限定腔室,其中第三衬底包括从腔室延伸通过第三衬底并且完全在所述一个或多个检测器上横向延伸的第一开口,The third substrate is mounted to the front surface using a spacer material directly disposed on the third substrate and an epoxide bonding agent disposed between the spacer material and the front surface to define a cavity between the third substrate and the front surface, wherein the third substrate includes a first opening extending laterally from the cavity through the third substrate and entirely over the one or more detectors. 其中后表面安装到第一表面;The rear surface is mounted onto the first surface; 各自在接触垫中的一个与传导元件中的一个之间延伸并且将接触垫中的一个与传导元件中的一个电气连接的多个布线;Multiple wires, each extending between one of the contact pads and one of the conductive elements and electrically connecting one of the contact pads and one of the conductive elements; 封装所述布线的外模材料,所述第一衬底的所述第一表面的一个或多个部分与所述传导元件相邻,并且所述第二衬底的所述前表面的一个或多个部分与所述多个接触垫相邻;The outer mold material encapsulates the wiring, one or more portions of the first surface of the first substrate are adjacent to the conductive element, and one or more portions of the front surface of the second substrate are adjacent to the plurality of contact pads; 透镜模块,安装到所述外模材料并且不安装到所述第三衬底,其中所述透镜模块包括外壳和一个或多个透镜,定位成将光聚焦穿过所述第一开口并且到达所述一个或多个检测器。A lens module is mounted to the outer mold material but not to the third substrate, wherein the lens module includes a housing and one or more lenses positioned to focus light through the first opening and to the one or more detectors. 2.如权利要求1所述的封装的传感器组装件,其中第一衬底由传导硅材料制成,并且其中组装件还包括设置在传导元件与第一衬底之间的绝缘材料。2. The packaged sensor assembly of claim 1, wherein the first substrate is made of conductive silicon material, and wherein the assembly further comprises an insulating material disposed between the conductive element and the first substrate. 3.如权利要求1所述的封装的传感器组装件,其中一个或多个探测器包括多个光电探测器。3. The packaged sensor assembly of claim 1, wherein one or more detectors comprise a plurality of photodetectors. 4.如权利要求3所述的封装的传感器组装件,其中第一开口设置在多个光电探测器之上。4. The encapsulated sensor assembly as claimed in claim 3, wherein the first opening is disposed on the plurality of photodetectors. 5.如权利要求1所述的封装的传感器组装件,其中一个或多个探测器包括一个或多个化学传感器。5. The packaged sensor assembly of claim 1, wherein one or more detectors include one or more chemical sensors. 6.如权利要求5所述的封装的传感器组装件,还包括:6. The packaged sensor assembly as described in claim 5, further comprising: 从腔室延伸通过第三衬底的第二开口。The second opening extends from the chamber through the third substrate. 7.如权利要求6所述的封装的传感器组装件,还包括:7. The packaged sensor assembly as described in claim 6, further comprising: 限定第一开口与第二开口之间的非线性流动路径的腔室中的一个或多个屏障结构。One or more barrier structures in a chamber that define a nonlinear flow path between a first opening and a second opening. 8.一种封装的传感器组装件,包括:8. A packaged sensor assembly, comprising: 包括相对的前表面与后表面的第一衬底;A first substrate comprising opposing front and rear surfaces; 形成在前表面中或上的一个或多个探测器;One or more detectors formed in or on the front surface; 形成在前表面处的电气耦合到一个或多个探测器的多个接触垫;Multiple contact pads formed on the front surface are electrically coupled to one or more detectors; 安装到前表面以在第二衬底与前表面之间限定腔室的第二衬底,其中第二衬底包括从腔室延伸通过第二衬底的第一开口;A second substrate is mounted to a front surface to define a cavity between a second substrate and the front surface, wherein the second substrate includes a first opening extending from the cavity through the second substrate; 形成到第一衬底的前表面中并朝向所述后表面延伸但不到达所述后表面的沟槽;以及A trench formed in the front surface of the first substrate and extending toward but not reaching the rear surface; and 各自延伸自接触垫中的一个并且到沟槽中的多个传导迹线;Each extends from one of the contact pads into multiple conductive traces in the trench; 绝缘材料,其覆盖除了所述沟槽中的传导迹线的上表面的接触部分之外的多个传导迹线的上表面;An insulating material that covers the upper surface of a plurality of conductive traces, except for the contact portion of the upper surface of the conductive traces in the trench; 第三衬底,其具有一个或多个电路层以及电气耦合到所述一个或多个电路层的多个接触垫;电气连接器,各自将传导迹线之一的接触部分之一与所述第三衬底的所述接触垫之一电气连接。A third substrate having one or more circuit layers and a plurality of contact pads electrically coupled to the one or more circuit layers; and an electrical connector, each electrically connecting a contact portion of one of the conductive traces to one of the contact pads of the third substrate. 9.如权利要求8所述的封装的传感器组装件,其中第二衬底通过设置在第二衬底与前表面之间的间隔物材料安装到前表面。9. The packaged sensor assembly of claim 8, wherein the second substrate is mounted to the front surface by a spacer material disposed between the second substrate and the front surface. 10.如权利要求8所述的封装的传感器组装件,其中一个或多个探测器包括多个光电探测器。10. The packaged sensor assembly of claim 8, wherein one or more detectors comprise a plurality of photodetectors. 11.如权利要求10所述的封装的传感器组装件,其中第一开口设置在多个光电探测器之上。11. The packaged sensor assembly of claim 10, wherein the first opening is disposed on the plurality of photodetectors. 12.如权利要求8所述的封装的传感器组装件,其中一个或多个探测器包括一个或多个化学传感器。12. The packaged sensor assembly of claim 8, wherein one or more detectors include one or more chemical sensors. 13.如权利要求12所述的封装的传感器组装件,还包括:13. The packaged sensor assembly of claim 12, further comprising: 从腔室延伸通过第二衬底的第二开口。The second opening extends from the chamber through the second substrate. 14.如权利要求13所述的封装的传感器组装件,还包括:14. The packaged sensor assembly of claim 13, further comprising: 限定第一开口与第二开口之间的非线性流动路径的腔室中的一个或多个屏障结构。One or more barrier structures in a chamber that define a nonlinear flow path between a first opening and a second opening. 15.如权利要求8所述的封装的传感器组装件,还包括:15. The packaged sensor assembly as described in claim 8, further comprising: 包封至少部分的前表面、电气连接器和第三衬底的外模材料。The outer mold material encapsulates at least part of the front surface, electrical connector, and third substrate. 16.如权利要求15所述的封装的传感器组装件,还包括:16. The packaged sensor assembly of claim 15, further comprising: 安装到外模材料的透镜模块,其中透镜模块包括外壳以及定位成将光聚焦通过第一开口并且到一个或多个探测器上的一个或多个透镜。A lens module is mounted to an outer mold material, wherein the lens module includes a housing and one or more lenses positioned to focus light through a first opening and onto one or more detectors. 17.一种形成封装的传感器组装件的方法,包括:17. A method of forming a packaged sensor assembly, comprising: 提供具有相对的第一和第二表面的第一衬底;A first substrate having opposing first and second surfaces is provided; 形成各自在第一与第二表面之间延伸的多个传导元件;Multiple conductive elements are formed, each extending between the first and second surfaces; 提供第二衬底,所述第二衬底包括:A second substrate is provided, the second substrate comprising: 相对的前表面和后表面,The front and rear surfaces are opposite to each other. 形成在前表面中或上的一个或多个探测器,以及One or more detectors formed in or on the front surface, and 形成在前表面处的电气耦合到一个或多个探测器的多个接触垫;Multiple contact pads formed on the front surface are electrically coupled to one or more detectors; 形成通过第三衬底的第一开口;A first opening is formed through the third substrate; 直接在所述第三衬底上形成间隔物材料;Spacer material is formed directly on the third substrate; 利用直接设置在所述间隔物材料和所述前表面之间的环氧化物键合剂,将所述第三衬底安装到前表面,以在第三衬底与前表面之间限定腔室,其中所述第一开口从腔室延伸通过第三衬底并且完全在所述一个或多个检测器上横向延伸;The third substrate is mounted to the front surface using an epoxide bonding agent disposed directly between the spacer material and the front surface to define a cavity between the third substrate and the front surface, wherein the first opening extends from the cavity through the third substrate and extends laterally over the one or more detectors. 将保护带放置在所述第三衬底上并在所述第一开口之上;Place the protective strip on the third substrate and above the first opening; 将后表面安装到第一表面;Mount the rear surface onto the first surface; 提供各自在接触垫中的一个与传导元件中的一个之间延伸并且将接触垫中的一个与传导元件中的一个电气连接的多个布线;以及Provides a plurality of wirings, each extending between one of the contact pads and one of the conductive elements and electrically connecting the one of the contact pads and one of the conductive elements; and 在将所述后表面安装到第一表面之后以及提供所述多个布线之后移除所述保护带。The protective tape is removed after the rear surface is mounted to the first surface and after the plurality of wirings are provided. 18.如权利要求17所述的方法,还包括:18. The method of claim 17, further comprising: 利用外模材料包封布线、与传导元件相邻的第一衬底的第一表面的一个或多个部分、以及与多个接触垫相邻的第二衬底的前表面的一个或多个部分。The wiring is encapsulated using an outer mold material, one or more portions of the first surface of a first substrate adjacent to a conductive element, and one or more portions of the front surface of a second substrate adjacent to a plurality of contact pads. 19.如权利要求17所述的方法,其中第一衬底由传导硅材料制成,该方法还包括:19. The method of claim 17, wherein the first substrate is made of a conductive silicon material, the method further comprising: 形成设置在传导元件与第一衬底之间的绝缘材料。An insulating material is formed between the conductive element and the first substrate. 20.如权利要求17所述的方法,其中一个或多个探测器包括多个光电探测器。20. The method of claim 17, wherein one or more detectors comprise a plurality of photodetectors. 21.如权利要求20所述的方法,其中第一开口设置在多个光电探测器之上。21. The method of claim 20, wherein the first opening is disposed on the plurality of photodetectors. 22.如权利要求17所述的方法,其中一个或多个探测器包括一个或多个化学传感器。22. The method of claim 17, wherein one or more detectors comprise one or more chemical sensors. 23.如权利要求22所述的方法,还包括:23. The method of claim 22, further comprising: 形成从腔室延伸通过第三衬底的第二开口。A second opening is formed, extending from the chamber through the third substrate. 24.如权利要求23所述的方法,还包括:24. The method of claim 23, further comprising: 形成限定第一开口与第二开口之间的非线性流动路径的腔室中的一个或多个屏障结构。One or more barrier structures in a chamber that form a nonlinear flow path between a first opening and a second opening. 25.如权利要求18所述的方法,还包括:25. The method of claim 18, further comprising: 将透镜模块安装到外模材料且不安装到所述第三衬底,其中透镜模块包括外壳以及定位成将光聚焦通过第一开口并且到一个或多个探测器上的一个或多个透镜。The lens module is mounted to the outer mold material but not to the third substrate, wherein the lens module includes a housing and one or more lenses positioned to focus light through a first opening and onto one or more detectors. 26.一种形成封装的传感器组装件的方法,包括:26. A method of forming a packaged sensor assembly, comprising: 提供第一衬底,其包括:A first substrate is provided, comprising: 相对的前表面与后表面,The front and rear surfaces are opposite to each other. 形成在前表面中或上的一个或多个探测器,以及One or more detectors formed in or on the front surface, and 形成在前表面处的电气耦合到一个或多个探测器的多个接触垫;Multiple contact pads formed on the front surface are electrically coupled to one or more detectors; 将第二衬底安装到前表面以在第二衬底与前表面之间限定腔室,其中第二衬底包括从腔室延伸通过第二衬底的第一开口;A second substrate is mounted to a front surface to define a cavity between the second substrate and the front surface, wherein the second substrate includes a first opening extending through the second substrate from the cavity. 将沟槽形成到第一衬底的前表面中并朝向所述后表面延伸但不到达所述后表面;以及A trench is formed in the front surface of the first substrate and extends toward the rear surface but does not reach the rear surface; and 形成各自延伸自接触垫中的一个并且到沟槽中的多个传导迹线;Multiple conductive traces are formed, each extending from one of the contact pads into the trench; 绝缘材料,其覆盖除了所述沟槽中的传导迹线的上表面的接触部分之外的多个传导迹线的上表面;An insulating material that covers the upper surface of a plurality of conductive traces, except for the contact portion of the upper surface of the conductive traces in the trench; 提供第三衬底,其具有一个或多个电路层以及电气耦合到所述一个或多个电路层的多个接触垫;以及A third substrate is provided, having one or more circuit layers and a plurality of contact pads electrically coupled to the one or more circuit layers; and 形成电气连接器,各自将传导迹线之一的接触部分之一与所述第三衬底的所述接触垫之一电气连接。An electrical connector is formed, wherein one of the contact portions of one of the conductive traces is electrically connected to one of the contact pads of the third substrate. 27.如权利要求26所述的方法,其中第二衬底通过设置在第二衬底与前表面之间的间隔物材料安装到前表面。27. The method of claim 26, wherein the second substrate is mounted to the front surface by means of a spacer material disposed between the second substrate and the front surface. 28.如权利要求26所述的方法,其中一个或多个探测器包括多个光电探测器。28. The method of claim 26, wherein one or more detectors comprise a plurality of photodetectors. 29.如权利要求28所述的方法,其中第一开口设置在多个光电探测器之上。29. The method of claim 28, wherein the first opening is disposed on the plurality of photodetectors. 30.如权利要求26所述的方法,其中一个或多个探测器包括一个或多个化学传感器。30. The method of claim 26, wherein one or more detectors comprise one or more chemical sensors. 31.如权利要求30所述的方法,还包括:31. The method of claim 30, further comprising: 形成从腔室延伸通过第二衬底的第二开口。A second opening is formed that extends from the chamber through the second substrate. 32.如权利要求31所述的方法,还包括:32. The method of claim 31, further comprising: 形成限定第一开口与第二开口之间的非线性流动路径的腔室中的一个或多个屏障结构。One or more barrier structures in a chamber that form a nonlinear flow path between a first opening and a second opening. 33.如权利要求26所述的方法,还包括:33. The method of claim 26, further comprising: 将至少部分的前表面、电气连接器和第三衬底包封在外模材料中。At least part of the front surface, electrical connector, and third substrate are encapsulated in the outer mold material. 34.如权利要求33所述的方法,还包括:34. The method of claim 33, further comprising: 将透镜模块安装到外模材料,其中透镜模块包括外壳以及定位成将光聚焦通过第一开口并且到一个或多个探测器上的一个或多个透镜。The lens module is mounted onto the outer mold material, wherein the lens module includes a housing and one or more lenses positioned to focus light through a first opening and onto one or more detectors.
HK16108207.4A 2013-06-03 2014-06-02 Sensor package with exposed sensor array and method of making same HK1220288B (en)

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US201361830563P 2013-06-03 2013-06-03
US61/830563 2013-06-03
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US14/292744 2014-05-30
US14/292,744 US9142695B2 (en) 2013-06-03 2014-05-30 Sensor package with exposed sensor array and method of making same
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