HK1206676B - Film-forming apparatus - Google Patents

Description

Film forming apparatus

Technical Field

The present invention relates to a film deposition apparatus for forming a film on a substrate.

Background

As a method for forming a film on a substrate, there have been conventionally known a "jet method" and a "spray method". In the "jet method", droplets of about 10 to 100 μm are ejected onto a substrate. In contrast, in the "spraying method", a mist of water of about several μm is sprayed onto the substrate.

In the "jet method", a two-fluid nozzle is generally used in which a gas is caused to collide with a solution to form droplets of the solution having a size of about several tens of μm. On the other hand, in the "spraying method", a solution is atomized into a fine mist of about several μm by an ultrasonic vibrator or the like, and the atomized solution is carried to a reaction chamber (or a spray outlet) on which a substrate is placed through a long pipe.

As a prior art relating to the "jet method", for example, patent document 1 is known. Further, as a prior art relating to the "spraying method", for example, patent document 2 is known.

Prior art documents

Patent document

Patent document 1: japanese laid-open patent publication No. 2007-144297

Patent document 2: japanese patent laid-open publication No. 2005-307238

However, in the "jet method", the gas colliding with the solution generally requires a large pressure and flow rate. Therefore, the initial velocity of the droplet is high, and the droplet collides with the substrate being heated in the state of the droplet. Since the diameter of the droplets is large, about 100 μm to several tens of μm, the thermal energy required for the chemical reaction cannot be obtained. Thus, the "jet method" has a problem that the film quality of the film formed on the substrate deteriorates.

On the other hand, in the "spray method", a solution atomized to about several μm is sprayed on a substrate, and therefore the above-mentioned problem of the "jet method" does not occur. In other words, in the "spraying method", the atomized solution carried by the carrier gas is supplied to the heated substrate. Therefore, the initial speed of mist is low, and the solvent evaporates in the vicinity of the substrate surface, so that the "spraying method" improves the film quality of the film formed on the substrate.

However, in the "spraying method", a large-sized mechanism for atomizing the solution needs to be provided. Therefore, the film forming apparatus to which the "spraying method" is applied has a problem that the entire apparatus becomes large.

In addition, in a film forming apparatus to which the "spraying method" is applied, it is necessary to convey an atomized solution to a reaction chamber (or a spray outlet) on which a substrate is placed via a long pipe. Therefore, the atomized solution is easily condensed in the pipe. Thus, the "spraying method" has a problem that it is difficult to efficiently use a material (solution) for a film formation process.

Further, due to condensation of the solution in the pipe, mist having uneven concentration is transported to the substrate. Therefore, a mechanism for rectifying the mist needs to be provided in the mist supply portion near the substrate. Thus, the film forming apparatus to which the "spraying method" is applied has various problems that the mist supply unit is large and heavy, and maintenance is difficult.

Disclosure of Invention

Problems to be solved by the invention

Therefore, an object of the present invention is to provide a film deposition apparatus capable of forming a film of good quality on a substrate, efficiently using a solution for a film deposition process, and reducing the size of the entire apparatus.

Means for solving the problems

In order to achieve the above object, a film forming apparatus according to the present invention is a film forming apparatus for forming a film on a substrate, the film forming apparatus including: a nozzle that ejects a solution that has been formed into droplets; a first chamber capable of storing the solution formed into droplets ejected from the nozzle; a first gas supply port that injects a gas that collides with the solution present in the first chamber; a second chamber contiguous with the first chamber; a through hole that is provided through a wall surface existing between the first chamber and the second chamber and guides the solution atomized by collision of the gas ejected from the first gas supply port from the first chamber to the second chamber; and a spray port which is disposed in the second chamber so as to face the substrate disposed outside the second chamber, and sprays the atomized solution onto the substrate.

Effects of the invention

The film forming apparatus of the present invention includes: a nozzle that ejects a solution that has been formed into droplets; a first chamber capable of storing the solution formed into droplets ejected from the nozzle; a first gas supply port that injects a gas that collides with the solution present in the first chamber; a second chamber contiguous with the first chamber; a through hole that is provided through a wall surface existing between the first chamber and the second chamber and guides the solution atomized by collision of the gas ejected from the first gas supply port from the first chamber to the second chamber; and a spray port which is disposed in the second chamber so as to face the substrate disposed outside the second chamber, and sprays the atomized solution onto the substrate.

In this way, in the film forming apparatus of the present invention, the solution formed into droplets ejected from the nozzle is caused to collide with the gas ejected from the first gas supply port, whereby atomization can be performed in the first chamber. Thus, the solution in the form of a jet can be atomized without directly contacting the substrate, and the atomized solution is sprayed onto the substrate, so that film formation similar to CVD can be performed in the atmosphere. Thus, the film forming apparatus can form a film of good quality on the substrate.

In the film forming apparatus of the present invention, the solution is atomized in a jet form in the first chamber in the vicinity of the spraying port of the solution with respect to the substrate. Thus, the transport distance of the mist solution can be significantly shortened as compared with a conventional film deposition apparatus using the "spray method" technique. This can prevent the water-mist solution from coagulating during movement. Thus, in the film forming apparatus of the present invention, the solution can be effectively used for the film forming process, and the solution having a stable concentration can be sprayed onto the substrate.

In the film forming apparatus of the present invention, after the jet-shaped solution is discharged, the solution is atomized by causing the gas to collide with the melt. In other words, in the film formation apparatus of the present invention, the structure for atomizing the solution is extremely simple, and an ultrasonic transducer or the like is not required. Thus, the film forming apparatus of the present invention can be downsized as a whole. In addition, the film forming apparatus of the present invention has a simple structure, and thus, the maintainability is improved.

The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Drawings

Fig. 1 is a sectional view showing a configuration of a main part of a film deposition apparatus according to the present embodiment.

Fig. 2 is a plan view showing a state in which the configuration of the main part of the film formation apparatus according to the present embodiment is viewed from above.

Fig. 3 is an enlarged cross-sectional view showing the structure of the first chamber 2 and the constituent members connected to the first chamber 2.

Fig. 4 is an enlarged sectional view showing the structure of the second chamber 4 and the constituent members connected to the second chamber 4.

Fig. 5 is an enlarged cross-sectional view showing the structure of the third chamber 12 and the components connected to the third chamber 12.

Fig. 6 is an enlarged cross-sectional view showing the structure of the fourth chamber 8 and the constituent members connected to the fourth chamber 8.

Fig. 7 is an enlarged cross-sectional view for explaining a cleaning process of the nozzle 1 using a cleaning liquid.

Detailed Description

The present invention relates to a film deposition apparatus for forming a film on a substrate in the atmosphere. The substrate was placed in an open space in the atmosphere, and the solution spray structure shown in fig. 1 was positioned in the open space above the substrate. The present invention will be specifically described below with reference to the drawings showing embodiments of the present invention.

< embodiment >

Fig. 1 is a cross-sectional view showing a configuration of a main part of the film formation apparatus of the present embodiment (more specifically, a vicinity of a solution spray section that sprays a solution onto a substrate). Here, the X-Y-Z directions are shown in FIG. 1. Fig. 2 is a plan view showing the structure shown in fig. 1 when viewed from above in fig. 1. Here, fig. 2 shows the X-Y direction. In fig. 2, the components 16, 17, and 60 are not shown to simplify the drawing.

Fig. 3 is an enlarged cross-sectional view showing the structure of the first chamber 2 shown in fig. 1, and the components 1 and 3 connected to the first chamber 2. Fig. 4 is an enlarged cross-sectional view showing the structure of the second chamber 4 and the component 6 connected to the second chamber 4 shown in fig. 1. Fig. 5 is an enlarged cross-sectional view showing the structure of the third chamber 12 and the component 14 connected to the third chamber 12 shown in fig. 1. Fig. 6 is an enlarged cross-sectional view showing the structure of the fourth chamber 8 and the component 7 connected to the fourth chamber 8 shown in fig. 1.

The structure of the film deposition apparatus according to the present embodiment will be described in detail below with reference to fig. 1 to 6.

As shown in fig. 1, the solution spraying section includes four chambers 2, 4, 8, and 12, and each of the chambers 2, 4, 8, and 12 is partitioned by a wall surface. In other words, as shown in the configuration example of fig. 1, the periphery of each of the chambers 2, 4, 8, and 12 is surrounded by a wall surface, thereby forming a housing space.

In the configuration example of fig. 1, the first chamber 2 is adjacent to the second chamber 4 in the X direction (right direction in fig. 1). The second chamber 4 is adjacent to the third chamber 12 in the X direction (rightward in fig. 1). In other words, the first chamber 2, the second chamber 4, and the third chamber 12 are adjacent in this order in the X direction. On the other hand, the first chamber 2 is adjacent to the fourth chamber 8 in the-Z direction (lower side in fig. 1).

First, a structure including the first chamber 2 will be described with reference to fig. 1, 2, and 3.

As shown in fig. 2, the first chamber 2 has a rectangular shape in plan view extending in the Y direction. As shown in fig. 1 and 3, the first chamber 2 is surrounded by a wall surface to form a housing space. In other words, the wall surfaces are disposed above, below, to the left, and to the right of the first chamber 2, thereby forming a closed space in the first chamber 2.

Here, as shown in fig. 1 and 3, a through hole 5 for connecting the first chamber 2 and the second chamber 4 is formed in a wall surface of the first chamber 2 adjacent to the second chamber 4. One or more through holes 5 may be provided. The opening shape of the through hole 5 may be any shape, and for example, a rectangular shape (slit shape) extending in the Y direction may be used.

As shown in fig. 1 and 3, a nozzle 1 for ejecting a solution formed into droplets is disposed. Here, the solution formed into droplets by the "jet method" is ejected from the ejection port 1a of the nozzle 1. In other words, droplets having a size of about several tens μm are ejected from the nozzle 1. As the nozzle 1, for example, the above-described two-fluid nozzle can be used. The solution contains a material of a film formed on the substrate 50.

Here, in the configuration example of fig. 1 and 3, a switching valve 16 is disposed on a path in the middle of the nozzle 1, and a cleaning liquid supply nozzle 17 is connected to the switching valve 16. The cleaning liquid for cleaning the inside of the nozzle 1 is ejected from the cleaning liquid supply port of the cleaning liquid supply nozzle 17.

When the switching valve 16 is switched in one direction, only the cleaning liquid supply port of the cleaning liquid supply nozzle 17 is closed, and only the solution flows through the nozzle 1. On the other hand, when the switching valve 16 is switched to the other direction, the cleaning liquid supply port of the cleaning liquid supply nozzle 17 is opened, and the fluid path of the nozzle 1 on the upstream side of the switching valve 16 is closed. Thus, in this case, only the cleaning liquid injected from the cleaning liquid supply port of the cleaning liquid supply nozzle 17 flows through the nozzle 1 on the downstream side of the switching valve 16.

A plurality of holes are formed through the upper wall surface of the first chamber 2, and the tip end of the nozzle 1 (the portion of the nozzle 1 on the downstream side of the switching valve 16) is inserted into the holes. Here, as illustrated in fig. 2, a plurality of nozzles 1 may be connected to the upper surface of the first chamber 2 (in the configuration example of fig. 2, the nozzles 1 are aligned in a row in the Y direction with a predetermined interval therebetween), or one nozzle 1 may be connected to the upper surface of the first chamber 2. In addition, in a state where the nozzle 1 is connected to the first chamber 2, a sealed state is secured in which the nozzle 1 penetrates a hole (insertion hole of the nozzle 1) provided in an upper surface of the first chamber 2.

The tip of the nozzle 1 penetrates the wall surface on the upper surface side of the first chamber 2, and the ejection port 1a of the nozzle 1 is present in the first chamber 2. A solution formed into droplets (several tens of μm in size) is ejected from the ejection port 1a of the nozzle 1 into the first chamber 2, and the ejected solution is stored in the first chamber 2.

As shown in fig. 1, 2, and 3, a plurality of first gas supply nozzles 3 are arranged. Gas is injected from the first gas supply port 3a of the first gas supply nozzle 3.

A plurality of holes are formed through the left wall surface of the first chamber 2, and the tip end of the first gas supply nozzle 3 is inserted through the holes. Here, as illustrated in fig. 2, a plurality of first gas supply nozzles 3 may be connected to the side surface of the first chamber 2 (in the configuration example of fig. 2, the first gas supply nozzles 3 are arranged along the Y direction so as to be spaced apart from each other by a predetermined interval), or one first gas supply nozzle 3 may be connected to the side surface of the first chamber 2.

Here, the gas ejected from the first gas supply port 3a of the first gas supply nozzle 3 collides with the solution in which droplets exist in the first chamber 2. Preferably, the first gas supply port 3a is directed in the direction of the solution ejected from the nozzle 1 so that the solution ejected from the nozzle 1 collides with the gas ejected from the first gas supply nozzle 3.

In a state where the first gas supply nozzle 3 is connected to the first chamber 2, a sealed state of a hole (an insertion hole of the first gas supply nozzle 3) penetrating a side surface of the first chamber 2 is ensured.

The solution in a droplet state is atomized by colliding the solution ejected from the nozzle 1 with the gas ejected from the first gas supply nozzle 3. In other words, a mist solution having a size of about several μm is generated in the first chamber 2 by the collision.

As described above, the through-hole 5 communicating with the second chamber 4 is provided through the right side surface of the first chamber 2. Here, it is preferable that the atomized solution is guided to the through-hole 5 along with the gas injected from the first gas supply nozzle 3. In other words, the through-holes 5 are preferably arranged on an extension of the ejection direction of the gas ejected from the first gas supply nozzle 3.

As shown in fig. 1 and 3, a temperature control unit 15 capable of temperature control is disposed in the wall surface on the upper surface side of the first chamber 2. The temperature adjusting portion 15 is disposed near the tip end portion of the nozzle 1, and can set the tip end portion to a predetermined temperature.

Next, a structure including the second chamber 4 will be described with reference to fig. 1, 2, and 4.

As shown in fig. 2, the second chamber 4 has a rectangular shape in plan view extending in the Y direction, as in the first chamber 2 (in the configuration example of fig. 2, the Y direction dimension of the first chamber 2 is the same as the Y direction dimension of the second chamber 4, and the ends are aligned). As shown in fig. 1 and 4, the second chamber 4 is surrounded by a wall surface except the lower surface, thereby forming a storage space. In other words, by disposing the wall surfaces above and on the left and right of the second chamber 4, a closed space except the lower surface is formed in the second chamber 4.

An open spray outlet 10 is formed in the lower surface of the second chamber 4. The spray opening 10 faces a main surface of the substrate 50 placed on the substrate placement unit 60 outside the second chamber 4 with a predetermined distance therebetween (see fig. 1). Thereby, the atomized solution is sprayed from spray opening 10 toward the main surface of substrate 50. The spray opening 10 is a rectangular opening (slit shape) extending in the Y direction.

Here, as described above, the wall surface of the second chamber 4 adjacent to the first chamber 2 is provided with the through hole 5 that connects the first chamber 2 and the second chamber 4.

As shown in fig. 1, 2, and 4, a plurality of second gas supply nozzles 6 are arranged. Gas is injected from the second gas supply port 6a of the second gas supply nozzle 6.

A plurality of holes are formed through the upper wall surface of the second chamber 4, and the tip end of the second gas supply nozzle 6 is inserted into the holes. Here, as illustrated in fig. 2, a plurality of second gas supply nozzles 6 may be connected to the upper surface of the second chamber 4 (in the configuration example of fig. 2, the second gas supply nozzles 6 are arranged in a line in the Y direction with a predetermined interval therebetween), or one second gas supply nozzle 6 may be connected to the upper surface of the second chamber 4. In addition, in a state where the second gas supply nozzle 6 is connected to the second chamber 4, a sealed state of a hole (an insertion hole of the second gas supply nozzle 6) penetrating through an upper surface of the second chamber 4 is secured.

The solution atomized in the first chamber 2 is transported into the second chamber 4 through the through-hole 5 and stored therein. Then, the gas injected from the second gas supply port 6a guides the atomized solution contained in the second chamber 2 to the spray port 10 side.

Next, a structure including the third chamber 12 will be described with reference to fig. 1, 2, and 5.

As shown in fig. 2, the third chamber 12 has a rectangular plan shape extending in the Y direction, similarly to the first chamber 2 and the second chamber 4 (in the configuration example of fig. 2, the Y direction dimension of the first chamber 2, the Y direction dimension of the second chamber 4, and the Y direction dimension of the third chamber 12 are the same, and the respective ends thereof are aligned). As shown in fig. 1 and 5, the third chamber 12 is surrounded by wall surfaces except for the lower surface, thereby forming a housing space. In other words, by disposing wall surfaces above and on the left and right of the third chamber 12, a closed space except the lower surface is formed in the third chamber 12.

An open exhaust port 11 is formed below the third chamber 12. The exhaust port 11 faces the main surface of the substrate 50 placed on the substrate placement unit 60 outside the third chamber 12 with a predetermined distance therebetween (see fig. 1). Thereby, unreacted liquid, gas, and the like existing above the substrate 50 are sucked from the exhaust port 11. The exhaust port 11 is a rectangular opening (slit-like) extending in the Y direction. As shown in fig. 1, an exhaust port 11 is provided adjacent to the right side of spray outlet 10, and the height position of spray outlet 10 is the same as the height position of exhaust port 11.

As shown in fig. 1, 2, and 5, a plurality of exhaust nozzles 14 are arranged. A suction force is applied from the exhaust hole 14a of the exhaust nozzle 14.

A plurality of holes are formed through the wall surface on the upper surface side of the third chamber 12, and the tip end portion of the exhaust nozzle 14 is inserted into the holes. Here, as illustrated in fig. 2, a plurality of exhaust nozzles 14 may be connected to the upper surface of the third chamber 12 (in the configuration example of fig. 2, the exhaust nozzles 14 are arranged in a row in the Y direction with a predetermined interval therebetween), or one exhaust nozzle 14 may be connected to the upper surface of the third chamber 12. In addition, in a state where the exhaust nozzle 14 is connected to the third chamber 12, a sealed state of a hole (an insertion hole of the exhaust nozzle 14) penetrating the upper surface of the third chamber 12 is secured.

As shown in fig. 1 and 5, a partition plate 13 extending in an obliquely upward direction is disposed in the third chamber 12. Although one end of the partition plate 13 is connected to one side surface of the third chamber 12, the other end of the partition plate 13 is not connected to the other side surface of the third chamber 12.

The gas and liquid existing above the substrate 50 are drawn from the exhaust port 11 by the suction force from the exhaust nozzle 14. The presence of the partition plate 13 suppresses the gas, liquid, and the like sucked from the exhaust port 11 and present in the third chamber 12 above the partition plate 13 from falling toward the exhaust port 11.

Next, the structure including the fourth chamber 8 will be described with reference to fig. 1, 2, and 6.

The fourth chamber 8 is disposed on the lower surface side of the first chamber 2, and has a rectangular plan shape extending in the Y direction, similarly to the first chamber 2 (the Y direction dimension of the first chamber 2 is the same as the Y direction dimension of the fourth chamber 8, and the ends thereof are aligned). As shown in fig. 1 and 6, the fourth chamber 8 is surrounded by a wall surface to form a housing space. In other words, the wall surfaces are disposed above, below, to the left, and to the right of the fourth chamber 8, thereby forming a closed space in the fourth chamber 8.

A third gas supply port 9 is provided through a lower wall surface of the fourth chamber 8. The third gas supply port 9 faces the main surface of the substrate 50 placed on the substrate placement unit 60 outside the fourth chamber 8 with a predetermined distance (see fig. 1). Thereby, the gas is ejected from the third gas supply port 9 toward the upper side of the substrate 50. The third gas supply port 9 is a rectangular opening (slit shape) extending in the Y direction. As shown in fig. 1, the third gas supply port 9 is provided adjacent to the left side of the spray port 10, and the height position of the spray port 10 is the same as the height position of the third gas supply port 9.

As shown in fig. 1, 2, and 6, a plurality of third gas supply nozzles 7 are arranged. The gas is ejected from the ejection port 7a of the third gas supply nozzle 7 toward the inside of the fourth chamber 8.

A plurality of holes are formed through the side wall surface of the fourth chamber 8, and the tip end of the third gas supply nozzle 7 is inserted through the holes. Here, as illustrated in fig. 2, a plurality of third gas supply nozzles 7 may be connected to the side surface of the fourth chamber 8 (in the configuration example of fig. 2, the third gas supply nozzles 7 are arranged along the Y direction so as to be spaced apart from each other by a predetermined interval), or one third gas supply nozzle 7 may be connected to the side surface of the fourth chamber 8. In addition, in a state where the third gas supply nozzle 7 is connected to the fourth chamber 8, a sealed state of a hole (an insertion hole of the third gas supply nozzle 7) penetrating through a side surface of the fourth chamber 8 is ensured.

The gas injected from the third gas supply nozzle 7 is contained in the fourth chamber 8, and is injected toward the upper surface of the substrate 50 from a third gas supply port 9 provided through the fourth chamber 8.

As shown in fig. 1, the film deposition apparatus is provided with a substrate mounting unit 60 on which the substrate 50 is mounted. The substrate mounting portion 60 moves in the left-right direction (X direction) in fig. 1 (as long as it moves in the horizontal direction) in a state where the substrate 50 is mounted. In other words, the substrate 50 is moved in the horizontal direction by the above movement of the substrate mounting portion 60 while the atomized solution is sprayed from the spray opening 10 in the vertical direction toward the substrate 50. Further, a heater is disposed on the substrate mounting portion 60. Therefore, the substrate 50 placed on the substrate placing section 60 is heated to a predetermined temperature (film forming temperature) by the heater.

Next, the film forming operation will be described.

The substrate 50 is placed on the substrate placing unit 60. Then, by moving the substrate mounting portion 60 in the X direction, the substrate 50 is moved to below the spray opening 10. Here, the substrate 50 is heated to the film formation temperature by a heater disposed in the substrate mounting portion 60.

On the other hand, a fluid solution (a solution in the form of droplets) is ejected from the nozzle 1 into the first chamber 2. Here, the switching valve 16 switches to one direction, and the cleaning liquid supply port of the cleaning liquid supply nozzle 17 is closed. Thereby, only the solution flows through the liquid path in the nozzle 1. The gas is ejected from the first gas supply port 3a toward the jet-like solution present in the first chamber 2.

The gas from the first gas supply port 3a collides with the jet-like solution, thereby generating a mist-like solution in the first chamber 2. In other words, the particle diameter of the jet-like solution is further reduced by the collision, thereby atomizing the solution.

The mist solution is guided into the second chamber 4 through the through hole 5 with the gas ejected from the first gas supply port 3 a. In the second chamber 4, the atomized solution is guided in the direction of the spray opening 10 along with the gas sprayed from the second gas supply opening 6 a. Then, a mist of the solution is sprayed from spray opening 10 onto the upper surface of substrate 50.

Here, a flow from spray opening 10 toward exhaust opening 11 is generated by a suction force from exhaust opening 11. Thereby, the atomized solution sprayed from spray port 10 generates a flow moving toward exhaust port 11 on the upper surface side of substrate 50. The gas and liquid sucked from the gas outlet 11 are discharged to the outside through the third chamber 12 and the gas discharge nozzle 14.

When the mist of the solution is discharged from the mist discharge port 10, the gas is discharged from the third gas supply port 9 toward the upper surface of the substrate 50. Here, as described above, the gas ejected from the third gas supply port 9 is supplied into the fourth chamber 8 from the third gas supply nozzle 7. By discharging the gas from the third gas supply port 9, the solution sprayed from the spray port 10 can be prevented from leaking to the left side of the third gas supply port 9. In other words, the gas from the third gas supply port 9 functions as a "barrier" against the solution sprayed from the spray port 10.

A flow from the third gas supply port 9 toward the exhaust port 11 is generated by a suction force from the exhaust port 11. Thereby, the gas injected from the third gas supply port 9 generates a flow moving toward the exhaust port 11 on the upper surface side of the substrate 50.

The substrate mounting portion 60 is moved in the X direction while performing the mist ejection of the solution from the mist ejection port 10, the suction from the exhaust port 11, and the ejection of the gas from the third gas supply port 9. As a result, the solution sprayed from spray port 10 reacts with the atmosphere, and a uniform film is formed over the entire upper surface of substrate 50 in a heated state.

Here, the solution discharged from the nozzle 1 is arbitrarily selected depending on the film to be formed. The gas ejected from the nozzles 3, 6, and 7 can be selected arbitrarily.

For example, when a solution having excellent reactivity with oxygen is ejected from the nozzle 1, it is preferable that an inert gas is ejected from the first gas supply port 3a and the second gas supply port 6a, and an oxidizing agent (for example, a fluid containing water, oxygen, ozone, or the like) is ejected from the third gas supply port 9. This can suppress oxidation of the solution in the first chamber 2 and the second chamber 4, and can promote the reaction between the solution sprayed in the mist form and the oxidizing agent between the spray opening 10 and the substrate 50.

For example, when a solution having excellent reactivity with oxygen is ejected from the nozzle 1, an inert gas may be ejected from the first gas supply port 3a and an oxidizing agent (e.g., oxygen, ozone, or the like) may be ejected from the second gas supply port 6 a. In this case, for example, air may be injected from the third gas supply port 9. This can suppress oxidation of the solution in the first chamber 2, promote the reaction between the atomized solution and the oxidizing agent, and spray the solution toward the substrate 50 while the oxidation reaction is occurring.

As described above, the film forming apparatus of the present embodiment includes the first chamber 2 capable of storing the solution formed into droplets ejected from the nozzle 1. The apparatus further includes a first gas supply port 3a for injecting a gas that collides with the solution present in the first chamber 2, and a second chamber 4 adjacent to the first chamber 2. Here, a through hole 5 through which the atomized solution flows is provided in a wall surface existing between the first chamber 2 and the second chamber 4. The film forming apparatus has a spray outlet 10, and the spray outlet 10 is disposed in the second chamber 4 so as to face the substrate 50 disposed outside the second chamber 4, and sprays the atomized solution onto the substrate 50.

In this way, in the film forming apparatus, the solution formed into droplets ejected from the nozzle 1 is caused to collide with the gas ejected from the first gas supply port 3a, whereby atomization can be performed in the first chamber 2. Thus, the solution in the form of a jet can be atomized without directly contacting the substrate 50, and the atomized solution is sprayed onto the substrate 50, whereby film formation similar to CVD can be performed in the atmosphere. Thus, in the film forming apparatus, a film having good film quality can be formed on the substrate 50.

In the film forming apparatus, the solution is atomized in a jet form in the first chamber 2 in the vicinity of the spray port 10 of the solution to the substrate 50. Thus, the distance of carrying the mist of solution can be significantly shortened as compared with a conventional film forming apparatus using the "spray method" technique. This can suppress the condensation of the atomized solution during the movement. Thus, in the film forming apparatus of the present invention, the solution can be effectively used for the film forming process, and the solution having a stable concentration can be sprayed onto the substrate 50.

In the film forming apparatus of the present invention, the atomization of the solution is performed by ejecting the jet-shaped solution and then causing the gas to collide with the melt. In other words, in the film forming apparatus of the present invention, the structure for atomizing the solution is very simple, and an ultrasonic vibrator or the like is not required. Thus, the film forming apparatus of the present invention can be downsized as a whole. Further, the film forming apparatus of the present invention has improved maintainability due to the simple structure.

In other words, the film forming apparatus of the present invention can simultaneously achieve the improvement of the film quality by the spray method, and the simple structure and high maintenance by the jet method.

Further, the first chamber 2 can prevent the solution of large droplets ejected from the nozzle 1 from scattering around. Further, the second chamber 4 can prevent the atomized solution from scattering around. Further, the gas can be prevented from scattering around the fourth chamber 8. Further, the third chamber 12 can perform exhaust gas treatment combining liquid and gas.

The film forming apparatus of the present invention further includes a second gas supply port 6a, and the second gas supply port 6a injects a gas for guiding the atomized solution present in the second chamber 4 to the spray port 10. Therefore, a flow for supplying the atomized solution to the substrate 50 side can be generated.

The film forming apparatus of the present invention further includes an exhaust port 11 disposed adjacent to the spray opening 10. Thus, a flow from spray opening 10 to exhaust port 11 is generated. Thereby, the atomized solution sprayed from spray port 10 forms a flow moving toward exhaust port 11 on the upper surface side of substrate 50.

The film forming apparatus of the present invention further includes a third gas supply port 9 which is disposed adjacent to the spray port 10 and sprays a gas. The solution sprayed from the spray opening 10 can be prevented from leaking to the left side of the third gas supply opening 9.

Here, each of the spray opening 10, the exhaust opening 11, and the third gas supply opening 9 has a slit shape extending in the Y direction. Therefore, the mist solution stored in the second chamber 4 can be uniformly sprayed from the spray opening 10, the gas stored in the fourth chamber 8 can be uniformly sprayed from the third gas supply opening 9, and the exhaust from the exhaust opening 11 can be uniformly performed along the Y direction.

In the film forming apparatus of the present invention, the nozzle 1 is disposed so as to penetrate the upper wall surface of the first chamber 2. A temperature adjusting portion 15 is disposed in the wall surface through which the nozzle 1 penetrates.

Therefore, the vicinity of the ejection opening 1a of the nozzle 1 can be maintained at a predetermined temperature. This can prevent the solution in the vicinity of the ejection opening 1a of the nozzle 1 from coagulating, and can prevent the nozzle 1 from being clogged.

The film deposition apparatus of the present invention further includes a substrate mounting unit 60 that moves in the horizontal direction. This makes it possible to form a film on the substrate 50 having a large area while fixing the components on the solution spraying side. Since the substrate mounting portion 60 is provided with a heater, the mounted substrate 50 can be heated.

The following configuration can be adopted as the film deposition apparatus of the present embodiment.

In other words, the structure including the nozzle 1, the switching valve 16, and the cleaning liquid supply nozzle 17 is a moving mechanism that moves in the vertical and horizontal directions. When the nozzle 1 is cleaned, the following operations are performed.

First, the structure is moved upward in fig. 1 by the moving mechanism, and the tip of the nozzle 1 is pulled out from the upper wall surface of the first chamber 2. Then, the structure is moved in the horizontal direction or the like by the moving mechanism. Thus, as shown in fig. 7, the tip of the nozzle 1 is positioned above the container 30 disposed outside the film formation processing region.

Then, the switching valve 16 is switched in the other direction, the cleaning liquid supply port of the cleaning liquid supply nozzle 17 is opened, and the fluid path of the nozzle 1 is closed on the upstream side of the switching valve 16. Thereby, the cleaning liquid supply port for supplying the cleaning liquid is connected to the fluid passage in the nozzle 1.

Then, when the cleaning liquid is caused to flow to the cleaning liquid supply nozzle 17, the cleaning liquid flows from the cleaning liquid supply port to the fluid passage in the nozzle 1, whereby contamination caused by the solution in the fluid passage in the nozzle 1 can be cleaned. The cleaning liquid output from the ejection opening 1a of the nozzle 1 is stored in the container 30.

After the cleaning of the nozzle 1, when the film forming process is performed, the structure is moved by the moving mechanism, and the nozzle 1 is inserted through a hole formed through the upper wall surface of the first chamber 2 as shown in fig. 1. When the switching valve 16 is switched to the other direction, only the cleaning liquid supply port of the cleaning liquid supply nozzle 17 is closed, and a fluid path through which only the solution flows in the nozzle 1 is formed.

The nozzle 1 contaminated by the film forming process can be appropriately cleaned by the moving mechanism and the cleaning mechanism.

In the present invention, the solution spray structure shown in fig. 1 is disposed in an open space in the atmosphere, and the space between the solution spray structure and the substrate 50 is not a closed space due to the horizontal movement of the substrate mounting portion 60. Also, in the present invention, due to the presence of the exhaust port 11, a certain air flow is generated in the space between the solution spray structure and the substrate 50 (in other words, in the open space).

Thus, in the film forming apparatus of the present invention, particles such as products can be prevented from adhering to the space between the solution spray structure and the substrate 50. This makes it possible to prevent the deterioration of the film quality of the formed film due to the mixing of the particles in the film forming apparatus.

Further, since the space between the solution spray structure and the substrate 50 is open, maintenance of the portion of the solution spray structure facing the substrate 50 is also facilitated. Further, a gas for guiding the atomized solution from the second chamber 4 to the spray opening 10 (in other words, the substrate 50) is sprayed from the second gas supply opening 6 a. This makes it possible to increase the distance between the solution spray structure and the substrate 50, and the above-described effect is more remarkable.

The present invention is described in detail, but the above description is only illustrative in all aspects, and the present invention is not limited thereto. It should be understood that numerous variations not illustrated can be devised without departing from the scope of the invention.

Description of the reference numerals

1: nozzle with a nozzle body

1 a: jet orifice

2: first chamber

3: first gas supply nozzle

3 a: a first gas supply port

4: second chamber

5: through hole

6: second gas supply nozzle

6 a: second gas supply port

7: third gas supply nozzle

8: the fourth chamber

9: third gas supply port

10: spray nozzle

11: exhaust port

12: third room

13: partition board

14: exhaust nozzle

15: temperature adjusting part

16: switching valve

17: cleaning liquid supply nozzle

30: container with a lid

50: substrate

60: substrate mounting part

Claims (13)

1. A film deposition apparatus for forming a film on a substrate, the film deposition apparatus comprising:

a nozzle that ejects a solution that has been formed into droplets;

a first chamber capable of storing the solution formed into droplets ejected from the nozzle;

a first gas supply port that injects a gas that collides with the solution present in the first chamber, thereby atomizing the solution;

a second chamber contiguous with the first chamber;

a through hole that is provided through a wall surface existing between the first chamber and the second chamber and guides the solution atomized by collision of the gas ejected from the first gas supply port from the first chamber to the second chamber; and

and a spray port which is disposed in the second chamber so as to face the substrate disposed outside the second chamber, and sprays the atomized solution onto the substrate.

2. The film forming apparatus according to claim 1,

the film forming apparatus further includes a second gas supply port for injecting a gas for guiding the atomized solution present in the second chamber to the spray port.

3. The film forming apparatus according to claim 2,

the film forming apparatus further includes an exhaust port that faces the substrate, is disposed adjacent to the spray outlet on one side surface of the spray outlet, and exhausts the gas.

4. The film forming apparatus according to claim 3,

the film forming apparatus further includes a third gas supply port that faces the substrate, is disposed adjacent to the spray port on the other side surface side of the spray port, and sprays a gas.

5. The film forming apparatus according to claim 1,

the spray opening is a rectangular opening.

6. The film forming apparatus according to claim 3,

the exhaust port is a rectangular opening.

7. The film forming apparatus according to claim 4,

the third gas supply port is a rectangular opening.

8. The film forming apparatus according to claim 1,

the nozzle is disposed so as to penetrate a wall surface of the first chamber,

a temperature adjusting portion capable of adjusting temperature is disposed on the wall surface through which the nozzle penetrates.

9. The film forming apparatus according to claim 1,

the nozzle is capable of being moved in relation to the nozzle,

the nozzle is provided with a cleaning liquid supply port for supplying a cleaning liquid to a fluid passage in the nozzle.

10. The film forming apparatus according to claim 1,

the film forming apparatus further includes a substrate mounting portion on which the substrate is mounted and which moves in a horizontal direction with respect to the spray opening.

11. The film forming apparatus according to claim 10,

a heater is disposed on the substrate mounting portion.

12. The film forming apparatus according to claim 4,

ejecting the solution reacted with oxygen from the nozzle,

injecting an inactive gas from the first gas supply port,

injecting an inert gas from the second gas supply port,

injecting an oxidant from the third gas supply port.

13. The film forming apparatus according to claim 2,

ejecting the solution reacted with oxygen from the nozzle,

injecting an inactive gas from the first gas supply port,

injecting an oxidant from the second gas supply port.